WO2011065322A1

WO2011065322A1 - Method for manufacturing light emitting diode unit

Info

Publication number: WO2011065322A1
Application number: PCT/JP2010/070786
Authority: WO
Inventors: 卓史波多野; 修志池永; 禄人田口
Original assignee: コニカミノルタオプト株式会社
Priority date: 2009-11-30
Filing date: 2010-11-22
Publication date: 2011-06-03

Abstract

Disclosed is a method for manufacturing a light emitting diode unit, which has a step wherein an LED chip is placed on a lower molding die; a step wherein a phosphor material is supplied to the surface of the LED chip; and a step wherein the phosphor material is encapsulated using a glass member by dropping a molten glass droplet at a temperature higher than that of the lower molding die and solidifying the droplet on the lower molding die, which has placed thereon the LED chip having the phosphor material supplied thereon. Thus, the light emitting diode unit can be manufactured in a short time, while suppressing deterioration and breakage of the LED chip phosphor layer and the like.

Description

Manufacturing method of light emitting diode unit

The present invention relates to a method for manufacturing a light emitting diode unit, and more particularly to a method for manufacturing a light emitting diode unit in which a phosphor layer is sealed with a glass member.

White light-emitting diodes (hereinafter also referred to as white LEDs) have excellent features such as low power consumption, small size, light weight, low heat generation, mercury-free, easy adjustment of light quantity, etc., so incandescent bulbs, fluorescent lamps, It is expected as a next-generation energy-saving illumination light source that can replace high-pressure discharge lamps.

As a method of emitting white light using an LED chip, (1) a method of obtaining white light by combining three or more color LED chips (see Patent Document 1), or (2) blue light, blue-violet light, or near ultraviolet light A method of obtaining white light by combining an LED chip that emits light or the like and a phosphor (see Patent Documents 2 and 3) is known. Of these, the method (1) is difficult to balance the light emission intensity of each color LED chip, so the method of obtaining white light by combining the LED chip and the phosphor as in (2) is the focus. Has been.

However, gallium nitride-based substrates that are mainly used as LED chip materials that emit blue light and the like have a high refractive index. Therefore, if the surface of the LED chip is in contact with an air layer or the like, light extraction efficiency is achieved by total reflection. There is a problem that will be extremely lowered.

On the other hand, in the light emitting diode unit described in Patent Documents 2 and 3, since the LED chip is sealed with a resin material such as an epoxy resin or a silicone resin, total reflection on the surface of the LED chip is suppressed, It is considered that a decrease in light extraction efficiency can be suppressed. However, such a resin material is prone to deterioration such as coloring due to the light from the LED chip and the influence of heat from the LED chip and the phosphor, and can be durable enough to withstand long-term use. There is a problem that you can not. In particular, when the brightness per unit area is required, such as an LED for a headlight of an automobile, or when an LED chip that emits near-ultraviolet light is used to obtain white light with high color rendering properties, the LED chip Deterioration of the resin material that seals the surface is significant and becomes a problem.

For such a problem, a method of forming a hemisphere by placing glass sheets above and below an LED chip covered with an insulating layer mixed with a phosphor and press-pressing under a predetermined temperature. (See Patent Document 4).

JP 2003-45206 A JP 2002-185046 A JP 2002-314142 A JP 2006-54210 A

However, in the method described in Patent Document 4, in order to form a glass sheet into a hemispherical shape, a package substrate including an LED chip, a phosphor, and an electrode member is placed under a high temperature and a high pressure for a long time. Therefore, there is a problem that deterioration and breakage of these members cannot be avoided. Moreover, since heating and cooling of these whole members are required, there is a problem that a long time is required for the process, resulting in an increase in cost.

The present invention has been made in view of the above technical problems, and an object of the present invention is a light-emitting diode unit that can be manufactured in a short time while suppressing deterioration and breakage of LED chips and phosphors. It is to provide a manufacturing method.

In order to solve the above problems, the present invention has the following features.

1. An LED chip that emits light of a predetermined wavelength from the surface;
A phosphor for converting the wavelength of light emitted from the LED chip;
A glass member for sealing the phosphor, and a manufacturing method of a light emitting diode unit comprising:
Placing the LED chip on the lower mold;
Supplying the phosphor to the surface of the LED chip;
On the lower mold on which the LED chip supplied with the phosphor is mounted, a molten glass droplet having a temperature higher than that of the lower mold is dropped and solidified to seal the phosphor with a glass member. And a process for producing the light emitting diode unit.

2. Before the molten glass droplet dripped on the lower mold is solidified, the molten glass droplet is pressurized with an upper mold facing the lower mold, and the glass member is formed into a predetermined shape, The manufacturing method of the light emitting diode unit of said 1 which does.

3. An LED chip that emits light of a predetermined wavelength from the surface;
A phosphor for converting the wavelength of light emitted from the LED chip;
A glass member for sealing the phosphor, and a manufacturing method of a light emitting diode unit comprising:
Temporarily fixing the upper surface of the LED chip with the surface facing downward;
Supplying the phosphor to the surface of the LED chip;
Dropping a molten glass droplet having a temperature higher than that of the lower mold on the lower mold facing the upper mold;
Before the molten glass droplets dropped on the lower mold are solidified, pressurizing the molten glass drops with the upper mold on which the LED chip is temporarily fixed, and sealing the phosphor with a glass member; A method for producing a light-emitting diode unit, comprising:

4). The LED chip has an electrode part on the back side facing the surface,
4. The method for manufacturing a light-emitting diode unit according to any one of claims 1 to 3, wherein sealing with the glass member is performed so that at least a part of the electrode portion is exposed.

5. Step of electrically connecting the exposed portion of the electrode portion and the lead portion of the package substrate having a lead portion for supplying power to the LED chip through the electrode portion after the molten glass droplet is solidified The manufacturing method of the light emitting diode unit of said 4 characterized by the above-mentioned.

6. 6. The method of manufacturing a light-emitting diode unit according to any one of 1 to 5, wherein the supply of the phosphor is performed by applying the phosphor on the surface of the LED chip.

7. The phosphor is supplied by applying a composition in which the phosphor is dispersed and heating to form a glass body containing the phosphor on the surface of the LED chip. The manufacturing method of the light emitting diode unit of any one of 1-5.

8. 8. The method for producing a light-emitting diode unit according to 7 above, wherein the composition contains an organometallic compound, a layered silicate mineral, inorganic fine particles, an organic solvent, and water.

9. 9. The method of manufacturing a light-emitting diode unit according to 8, wherein the organometallic compound is polysiloxane and the layered silicate mineral is smectite.

10. 8. The method for producing a light emitting diode unit according to 7, wherein the composition contains an inorganic polymer and an organic solvent.

11. 11. The method for producing a light emitting diode unit according to 10, wherein the inorganic polymer is polysilazane.

12. The light emitting diode unit according to any one of 1 to 5, wherein the phosphor is supplied by placing a glass plate having the phosphor on the surface of the LED chip. Production method.

13. 13. The method for manufacturing a light-emitting diode unit according to 12, wherein the glass plate is a kneaded glass in which the phosphor is dispersed.

14. 3. The light emitting diode unit according to 1 or 2, wherein the plurality of LED chips are arranged on the lower mold, and the plurality of LED chips are integrated by dropping one drop of the molten glass drop. Manufacturing method.

15. 15. The light emitting device according to 14, wherein the fluorescent material is supplied by placing one glass plate having the fluorescent material so as to straddle the surface of the arrayed LED chips. Manufacturing method of the diode unit.

According to the method of the present invention, since the phosphor layer is sealed with the glass member by dripping and solidifying the molten glass droplet, it is not necessary to maintain the LED chip or the phosphor layer at a high temperature for a long time, Degradation due to temperature can be suppressed. Moreover, even when it is a case where a glass member is shape | molded to a defined shape, since glass can be deformed with a pressure smaller than before, damage to these members can be suppressed. Furthermore, since it is not necessary to heat and cool the entire member, the phosphor layer can be sealed in a very short time. Therefore, a light emitting diode unit can be manufactured in a short time while suppressing deterioration and breakage of the LED chip and the phosphor layer.

It is sectional drawing which shows the LED chip mounted on the lower mold | type. It is sectional drawing which shows the state by which the fluorescent substance layer was supplied to the surface of the LED chip. It is a schematic diagram for demonstrating the sealing process in 1st Embodiment. It is a schematic diagram which shows the modification of the sealing process in 1st Embodiment. It is sectional drawing which shows the light emitting diode unit manufactured by 1st Embodiment. It is sectional drawing which shows the light emitting diode unit manufactured by 1st Embodiment and integrated with the package board | substrate. It is a schematic diagram for demonstrating the sealing process in 2nd Embodiment. It is sectional drawing which shows the light emitting diode unit manufactured by 2nd Embodiment. It is a schematic diagram which shows the modification of the sealing process in 2nd Embodiment. It is a schematic diagram for demonstrating the sealing process in 3rd Embodiment.

Hereinafter, embodiments of the present invention will be described in detail with reference to FIGS. 1 to 10, but the present invention is not limited to the embodiments.

<First Embodiment>
First, a method for manufacturing the light emitting diode unit of the first embodiment will be described with reference to FIGS. The light emitting diode unit manufacturing method of this embodiment includes a step of placing an LED chip on the lower mold (LED chip placement step), and a step of supplying a phosphor layer on the surface of the LED chip (phosphor layer supply). Process) and a molten glass droplet having a temperature higher than that of the lower mold is dropped and solidified on the lower mold on which the LED chip supplied with the phosphor layer is placed, and the phosphor layer is sealed with a glass member. A process (sealing process).

FIG. 1 is a cross-sectional view schematically showing an LED chip placed on the lower die in the LED chip placing step, and FIG. 2 is a state in which the phosphor layer is supplied to the surface of the LED chip in the phosphor layer supplying step. FIG. 3 is a schematic view for explaining a sealing process. 4 and 5 are cross-sectional views schematically showing a light emitting diode unit manufactured by the manufacturing method of the present embodiment.

(LED chip placement process)
FIG. 1A is a diagram illustrating an example of a state in which the LED chip 10 is placed on the lower mold 60. The LED chip 10 is called a flip chip type having an electrode portion 11 on the back surface side, and emits light of a predetermined wavelength from the front surface 12. There are no particular restrictions on the type of semiconductor that constitutes the LED chip 10. For example, a known LED chip such as one using a gallium nitride-based semiconductor (GaN, InGaN, AlInGaN, etc.) may be appropriately selected and used. The emitted light may be blue light, blue-green light, near ultraviolet light, ultraviolet light, or the like. The chip size is not limited, and may be 0.35 mm square (small chip) or 1 mm square (large chip). When the chip size is large, the amount of heat generation increases, but the phosphor layer and the like are sealed with a glass member having excellent heat resistance in the manufacturing method of this embodiment, so that even if a large 1 mm square chip is used, it is durable. A light emitting diode unit having excellent properties can be manufactured.

Also, as shown in FIG. 1B, a plurality of LED chips 10 are arranged and placed on one lower mold 60, and a light emitting diode unit in which the plurality of LED chips 10 are integrated with a glass member is manufactured. Is also preferable. Thus, the light emitting diode unit having a configuration in which a plurality of LED chips 10 are integrated with a glass member is particularly suitable for applications requiring a high luminous flux.

The shape of the surface of the lower mold 60 on which the LED chip 10 is placed is not particularly limited, and may be a concave surface or a convex surface in addition to a flat surface. It is also preferable to provide an inclined surface 62 having a predetermined shape and use the surface formed on the glass member by the transfer of the inclined surface 62 as a positioning surface when the light emitting diode unit is fixed to the package substrate. It is also preferable to provide unevenness so that the LED chip 10 can be positioned at a predetermined position. If it is necessary to accurately position and place the LED chip, the LED chip may be temporarily fixed to the surface of the lower mold 60 using solder or the like.

The material of the lower mold 60 is preferably a material that has high heat resistance and hardly reacts with molten glass. For example, various heat-resistant alloys (such as stainless steel), super hard materials mainly composed of tungsten carbide, various ceramics (such as silicon carbide, silicon nitride, and aluminum nitride), composite materials containing carbon, and the like can be given. It is also preferable to provide a coating layer on the surface in order to improve the durability of the lower mold 60 and prevent fusion with the glass. There are no particular restrictions on the material of the coating layer. For example, various metals (chromium, aluminum, titanium, etc.), nitrides (chromium nitride, aluminum nitride, titanium nitride, boron nitride, etc.), oxides (chromium oxide, aluminum oxide) , Titanium oxide, etc.) can be used.

(Phosphor layer supply process)
2A shows a state where the phosphor layer 30 is supplied to the surface 12 of the LED chip 10 of FIG. 1A, and FIG. 2B shows the surface 12 of the three LED chips 10 of FIG. 1B. It is sectional drawing which shows typically the state to which the fluorescent substance layer 30 was supplied, respectively.

The phosphor used for the phosphor layer 30 to be supplied may be appropriately selected and used according to the application and type of the light emitting diode unit to be manufactured. When a chip that emits blue light is used as the LED chip 10, for example, a blue LED chip + yellow is used by using a yellow phosphor that converts the wavelength of blue light into yellow light (excited by blue light and emits yellow light). White light can be obtained by adopting a phosphor structure. By using two or more kinds of phosphors, for example, a configuration of blue LED chip + yellow phosphor + red phosphor or a configuration of blue LED chip + green phosphor + red phosphor can be used. When a chip that emits near-ultraviolet light is used as the LED chip 10, a configuration of near-ultraviolet LED chip + blue phosphor + yellow phosphor or a near-UV LED chip + blue phosphor + green phosphor + red phosphor With this configuration, white light can be obtained.

Suitable phosphors include YAG phosphors, silicate phosphors, nitride phosphors, oxynitride phosphors, sulfide phosphors, thiogallate phosphors, aluminate phosphors, and the like.

When a plurality of types of phosphors are used, all the phosphors may be mixed and supplied, or may be supplied in layers for each type of phosphor. In general, when a plurality of types of phosphors are used at the same time, loss due to so-called multistage excitation, in which light emitted from the first phosphor excites another second phosphor, tends to be a problem. From the viewpoint of effectively reducing the loss due to such multi-stage excitation, it is preferable to supply the phosphors by dividing them into layers. Furthermore, by arranging the phosphor having the longer emission wavelength on the side where the light from the LED chip 10 serving as the light source reaches first, and arranging the phosphor having the shorter emission wavelength on the side reaching later, Loss due to multistage excitation can be reduced more effectively.

The phosphor layer 30 may be supplied to the surface 12 of the LED chip 10 by applying powder, or after being applied in a state of being dispersed in a liquid or gel binder, it is vaporized or thermally decomposed. The binder may be removed. When a binder is used, it is preferable to use a binder that can be removed at a low temperature from the viewpoint of suppressing deterioration of the phosphor layer 30 and the like. For example, organic solvents such as ethanol and acetone, and synthetic resins are suitable.

It is also preferable to form a glass body that is a phosphor layer 30 containing a phosphor on the surface 12 of the LED chip 10 by applying and heating a composition in which the phosphor is dispersed. The composition may be applied by a known method such as spin coating, dip coating, or spray coating. Moreover, it is also preferable to apply using a bar coater according to the shape of the LED chip 10. A dry oven or the like may be used to heat the applied composition. The film thickness of the glass body formed after heating is preferably 10 μm to 80 μm. The composition to be applied may be a gel (sol-gel solution) in which a transparent ceramic layer (glass body) is formed by further heating the gel after heating, and by volatilizing the solvent component. The glass body may be formed directly without gelation.

As the sol-gel solution (precursor solution), a solution containing a phosphor, a layered silicate mineral, and inorganic fine particles in a solution obtained by mixing an organometallic compound as a glass body component in an organic solvent can be used.

(Organic metal compound)
The organometallic compound serves as a binder for sealing the phosphor, the layered silicate mineral, and the inorganic fine particles. Examples of the organometallic compound used in the present invention include metal alcosides, metal acetylacetonates, metal carboxylates and the like, but metal alkoxides that are easily gelled by hydrolysis and polymerization reaction are preferable.

The metal alkoxide may be a single molecule such as tetraethoxysilane, or may be a polysiloxane in which an organic siloxane compound is linked in a chain or a ring, but a polysiloxane that increases the viscosity of the mixed solution is preferable. In addition, there is no restriction | limiting in the kind of metal if a translucent glass body can be formed, but it is preferable to contain a silicon | silicone from a viewpoint of the stability of the glass body formed and the ease of manufacture. Moreover, you may contain multiple types of metal.

When the content of the organometallic compound in the glass body is less than 2% by mass, the organometallic compound as the binder is too small, and the strength of the glass body after heating and firing is lowered. On the other hand, when the content of the organometallic compound exceeds 50% by mass, the content of the layered silicate mineral is relatively decreased, so that the viscosity of the mixed solution before heating is decreased and the phosphor is easily precipitated. . Moreover, since the content of the inorganic fine particles is relatively lowered, the strength of the glass body is also lowered. Therefore, the content of the organometallic compound in the glass body is preferably 2% by mass or more and 50 or less, and more preferably 2.5% by mass or more and 30% by mass or less.

(Phosphor)
The phosphor is excited by the wavelength (excitation wavelength) of light emitted from the LED chip 10 and emits fluorescence having a wavelength different from the excitation wavelength. In this embodiment, a YAG (yttrium, aluminum, garnet) phosphor that converts blue light (wavelength 420 nm to 485 nm) emitted from the blue LED element into yellow light (wavelength 550 nm to 650 nm) is used.

Such phosphors use oxides of Y, Gd, Ce, Sm, Al, La, and Ga, or compounds that easily become oxides at high temperatures, and are mixed well in a stoichiometric ratio. A mixed raw material is obtained. Alternatively, a coprecipitated oxide obtained by calcining a solution obtained by coprecipitation of a solution obtained by dissolving a rare earth element of Y, Gd, Ce, or Sm in an acid with a stoichiometric ratio with oxalic acid, and aluminum oxide or gallium oxide. Mix to obtain a mixed raw material. Then, an appropriate amount of fluoride such as ammonium fluoride is mixed with the obtained mixed raw material as a flux and pressed to obtain a molded body. The obtained molded body is packed in a crucible and fired in air at a temperature range of 1350 to 1450 ° C. for 2 to 5 hours to obtain a sintered body having the light emission characteristics of a phosphor.

In this embodiment, the YAG phosphor is used. However, the type of the phosphor is not limited to this. For example, other phosphors such as non-garnet phosphors containing no Ce are used. You can also. In addition, the larger the particle size of the phosphor, the higher the light emission efficiency (wavelength conversion efficiency), but the gap generated at the interface with the organometallic compound becomes larger, and the film strength of the formed glass body decreases. Accordingly, in consideration of the size of the gap generated at the interface between the light emission efficiency and the organometallic compound, it is preferable to use one having an average particle diameter of 1 μm or more and 50 μm or less. The average particle diameter of the phosphor can be measured, for example, by a Coulter counter method.

(Layered silicate mineral)
The layered silicate mineral is preferably a swellable clay mineral having a structure such as a mica structure, a kaolinite structure, or a smectite structure, and particularly preferably a smectite structure rich in swellability. This is because, as will be described later, by adding water to the mixed liquid, it takes a card house structure in which water enters and swells between the layers of the smectite structure, so the viscosity of the mixed liquid is greatly increased. It is.

If the content of the layered silicate mineral in the glass body is less than 0.5% by mass, the effect of increasing the viscosity of the mixed solution cannot be obtained sufficiently. On the other hand, when the content of the layered silicate mineral exceeds 20% by mass, the strength of the glass body after heating is lowered. Therefore, the content of the layered silicate mineral is preferably 0.5% by mass or more and 20% by mass or less, and more preferably 0.5% by mass or more and 10% by mass or less. In consideration of compatibility with an organic solvent, a layered silicate mineral whose surface is modified (surface treatment) with an ammonium salt or the like can be used as appropriate.

(Inorganic fine particles)
Inorganic fine particles include a filling effect that fills gaps formed at the interface between the organometallic compound, the phosphor and the layered silicate mineral, a thickening effect that increases the viscosity of the mixed liquid before heating, and a glass body film after heating. It has a film strengthening effect that improves strength. Examples of the inorganic fine particles used in the present invention include oxide fine particles such as silicon oxide, titanium oxide and zinc oxide, and fluoride fine particles such as magnesium fluoride. In particular, when a silicon-containing organic compound such as polysiloxane is used as the organometallic compound, it is preferable to use silicon oxide fine particles from the viewpoint of stability with respect to the formed glass body.

When the content of the inorganic fine particles in the glass body is less than 0.5% by mass, the above-described effects cannot be sufficiently obtained. On the other hand, when the content of the inorganic fine particles exceeds 50% by mass, the strength of the glass body after heating is lowered. Therefore, the content of the inorganic fine particles in the glass body is preferably 0.5% by mass or more and 50% by mass or less, and more preferably 1% by mass or more and 40% by mass or less. The average particle diameter of the inorganic fine particles is preferably 0.001 μm or more and 50 μm or less in consideration of the above-described effects. The average particle diameter of the inorganic fine particles can be measured, for example, by a Coulter counter method. In consideration of compatibility with an organic metal compound or an organic solvent, a material obtained by treating the surface of inorganic fine particles with a silane coupling agent or a titanium coupling agent can be used as appropriate.

(Precursor solution)
The precursor solution is a mixture of an organometallic compound in an organic solvent, and a translucent glass body can be obtained by heating the precursor solution. A glass body is formed by heating a mixed solution in which the precursor solution is mixed with a phosphor, a layered silicate mineral, and inorganic fine particles. Furthermore, by adding water to the mixed solution, water enters between the layers of the layered silicate mineral and the viscosity of the mixed solution increases, so that the phosphor can be prevented from settling. In addition, since there exists a possibility of inhibiting a polymerization reaction when the impurity is contained in water, it is necessary to use the pure water which does not contain an impurity for the water to add.

As the organic solvent, alcohols such as methanol, ethanol, propanol and butanol having excellent compatibility with added water are preferable. Further, when the amount of the organic metal compound mixed with the organic solvent is less than 5% by mass, it becomes difficult to increase the viscosity of the mixed solution, and when the amount of the organic metal compound exceeds 50% by mass, the polymerization reaction is faster than necessary. Proceed. Therefore, the mixing amount of the organometallic compound with respect to the organic solvent is preferably 5% by mass or more and 50% by mass or less, and more preferably 8% by mass or more and 40% by mass or less.

For example, when using a surface-treated lipophilic layered silicate mineral, the layered silicate mineral is first added to a solution (precursor solution) in which an organometallic compound is mixed in an organic solvent. Premixing is performed, and then phosphor, inorganic fine particles, and water are mixed. When a hydrophilic layered silicate mineral that has not been surface-treated is used, first the layered silicate mineral and water are premixed, and then the phosphor, inorganic fine particles, and precursor solution are mixed. Thereby, a layered silicate mineral can be mixed uniformly and the thickening effect can be heightened more. The preferred viscosity of the mixed solution is 0.025 to 0.8 Pa · s, and the most preferred viscosity is 0.03 to 0.5 Pa · s.

In addition, when the ratio of water to the total amount of the solvent obtained by adding water to the organic solvent is less than 5% by mass, the above thickening effect cannot be sufficiently obtained, and when the ratio of water exceeds 60% by mass, the thickening effect is achieved. The effect of reducing the viscosity due to excessive mixing of water is greater than that. Therefore, the ratio of water is preferably 5% by mass or more and 60% by mass or less, and more preferably 7% by mass or more and 55% by mass or less with respect to the total amount of solvent. The most preferable composition of the mixed solution is that using polysiloxane as the organometallic compound. The most preferable composition range of each of the above components contained in the mixed solution is that the polysiloxane dispersion is 4 to 30% by mass, and the layered silica is used. The acid salt mineral is 1 to 10% by mass, the inorganic fine particles are 1 to 40% by mass, and the water is 10 to 50% by mass.

A predetermined amount of the mixed liquid obtained as described above is applied onto the surface 12 of the LED chip 10, and heated and baked to form a glass body having a predetermined film thickness. The method for applying the mixed solution is not particularly limited, and various conventionally known methods such as spin coating, dip coating, spray coating, and bar coating can be used. When the heating temperature is less than 50 ° C., the polymerization reaction of the organometallic compound does not proceed. When the heating temperature exceeds 1000 ° C., the layered silicate mineral is thermally decomposed and the layered structure is destroyed. Therefore, the heating temperature of the mixed solution needs to be 50 ° C. or higher and 1000 ° C. or lower, and preferably 100 ° C. to 600 ° C. However, it is necessary to set the temperature at which the LED chip 10 does not deteriorate.

Further, when the thickness of the formed glass body is less than 5 μm, the wavelength conversion efficiency is lowered and sufficient fluorescence cannot be obtained, and when the thickness of the glass body exceeds 500 μm, the film strength is reduced and cracks and the like are generated. It tends to occur. Therefore, the thickness of the glass body is preferably 5 μm or more and 500 μm or less.

At this time, if the particle size of the phosphor and inorganic fine particles contained in the glass body is larger than the thickness of the glass body to be formed, a part of the phosphor or inorganic fine particles protrudes from the surface of the glass body and the surface is smooth. Sex is lost. Therefore, phosphors and inorganic fine particles having a maximum particle size smaller than the thickness of the glass body are used.

By manufacturing in this way, since the phosphor layer 30 is formed of a translucent glass body, heat resistance and light resistance can be improved as compared with the case where the phosphor layer 30 is formed of a resin material. In addition, since the phosphor is less likely to settle when the glass body is formed and the phosphor is uniformly dispersed in the glass body, the occurrence of color unevenness can be effectively reduced. Furthermore, the film strength of the glass body is improved by adding inorganic fine particles.

On the other hand, examples of the latter (in which a glass body is directly formed without being gelled by volatilizing a solvent component) include, for example, a composition containing an inorganic polymer and an organic solvent.

Polysilazane can be used as the inorganic polymer. The polysilazane used in the present invention is represented by the following general formula (1).

(R ₁ R ₂ SiNR ₃ ) _n (1)
In formula (1), R ₁ , R ₂ and R ₃ each independently represent a hydrogen atom or an alkyl group, an aryl group, a vinyl group or a cycloalkyl group, and at least one of R ₁ , R ₂ and R ₃ Are hydrogen atoms, preferably all are hydrogen atoms, and n represents an integer of 1 to 60.

The molecular shape of polysilazane may be any shape, for example, linear or cyclic.

The polysilazane represented by the above formula (1) and a reaction accelerator as required are dissolved in an appropriate solvent and then cured by heating, excimer light treatment, UV light treatment, and excellent heat resistance and light resistance. A ceramic film can be made. In particular, the effect of preventing penetration of moisture can be further improved by heat curing after irradiation with UVU radiation (eg, excimer light) containing a wavelength component in the range of 170 to 230 nm.

As the reaction accelerator, it is preferable to use an acid, a base or the like, but it is not necessary to use it. Examples of reaction accelerators include triethylamine, diethylamine, N, N-diethylethanolamine, N, N-dimethylethanolamine, triethanolamine, triethylamine, hydrochloric acid, oxalic acid, fumaric acid, sulfonic acid, acetic acid, nickel, iron, palladium , Metal carboxylates including iridium, platinum, titanium, and aluminum, but are not limited thereto.

In the case of using a reaction accelerator, a metal carboxylate is particularly preferable, and the addition amount is preferably 0.01 to 5 mol% based on polysilazane.

As the solvent, aliphatic hydrocarbons, aromatic hydrocarbons, halogen hydrocarbons, ethers, and esters can be used. Preferred are methyl ethyl ketone, tetrahydrofuran, benzene, toluene, xylene, dimethyl fluoride, chloroform, carbon tetrachloride, ethyl ether, isopropyl ether, dibutyl ether, and ethyl butyl ether.

In addition, it is preferable that the polysilazane concentration is high. However, since an increase in the concentration leads to a shortening of the storage period of the polysilazane, the polysilazane is preferably dissolved in the solvent at 5 to 50% by mass or less.

In addition, when an organometallic compound or an inorganic polymer is used as a precursor, the heating temperature at the time of firing is preferably 100 ° C. to 350 ° C. from the viewpoint of suppressing deterioration of the material used for the substrate and the metal of the wiring. More preferably, the temperature is 150 ° C to 300 ° C.

In addition, when polysilazane is used, it is preferable that the composition contains inorganic fine particles. Since the viscosity of the composition is increased by containing inorganic fine particles, the precipitation rate of the phosphor when the phosphor is dispersed in the composition is reduced, and it is easy to uniformly disperse the phosphor in the composition. Become. For example, inorganic fine particles of various oxides such as silica and inorganic fine particles of magnesium fluoride are suitable. From the viewpoint of stability with a glass body formed from polysilazane, it is preferable to contain inorganic fine particles of silica. The inorganic fine particles preferably have a 50% particle diameter (median diameter) of 1 nm to 500 nm. The shape of the inorganic fine particles is not particularly limited, but preferably spherical fine particles are used. The particle size distribution is not particularly limited, but from the viewpoint of uniformly dispersing the phosphor, those having a relatively narrow distribution are preferably used rather than those having a wide distribution. The shape and particle size distribution of the inorganic fine particles can be confirmed using SEM and TEM. The content of the inorganic fine particles is preferably 0.1% by mass to 25% by mass with respect to the entire composition including the phosphor. In order to further uniformly disperse the phosphors of the inorganic fine particles, it is also preferable to apply ultrasonic waves to the composition in which the phosphors are mixed and disperse them.

Alternatively, the phosphor layer 30 may be supplied by placing the glass plate 31 having the phosphor layer 30 on the surface 12 of the LED chip 10. FIG.2 (c) is a figure which shows the state which mounted the glass plate 31 which has the fluorescent substance layer 30 so that it might straddle the surface 12 of the three LED chips 10 of FIG.1 (b). Thus, by supplying the phosphor layer 30 using the glass plate 31 having the phosphor layer 30, a predetermined amount of the phosphor layer 30 can be reliably and easily supplied. In addition, as shown in FIG. 2C, the phosphor layer 30 can be supplied more easily by placing one glass plate 31 across the surface of the arrayed LED chips 10. Can do. As the glass plate 31 having the phosphor layer 30, (A) a kneaded glass in which the phosphor is dispersed inside, or (B) a glass plate in which the phosphor layer 30 is coated on at least one surface is suitably used. Can be used.

In the case of the method (B), the phosphor layer 30 may be applied and formed on the surface of the glass plate by the same method as that for applying the phosphor layer 30 to the surface 12 of the LED chip 10 described above.

In the case of the method (A), the kneaded glass in which the phosphor is dispersed is preferably produced by pressure-molding a mixed material in which glass powder and phosphor powder are mixed. Thereby, deterioration and deactivation of the phosphor due to heat can be suppressed as compared with the method of mixing the phosphor during the glass melting process. It is also preferable to make it densified by firing at a predetermined temperature after the pressure molding.

In the mixed material, a resin binder may be added, but in that case, a step of removing the resin binder after pressure molding is required. Therefore, it is preferable to perform pressure molding by mixing glass powder and phosphor powder without using a resin binder.

The glass powder to be mixed preferably has a maximum particle size of 160 μm or more and a median diameter d50 of 5 μm or more. Thereby, kneaded glass in which the phosphor is uniformly dispersed can be obtained without using a resin binder. At the time of pressure molding, bubbles are more easily removed when the maximum particle size is 160 μm or more. If the maximum particle size is less than 160 μm, bubbles are difficult to escape. Further, when the median diameter d50 is less than 5 μm, when the powder is put into the mold, dust rises and handling becomes difficult. In addition, the work environment may be harmed. Moreover, the upper limit of the maximum particle diameter should just be a range from which favorable scattered light is obtained, and can be suitably determined according to the combination of a LED chip and fluorescent substance.

Here, the median diameter d50 is a particle diameter (cumulative average diameter) at a point where the cumulative curve becomes 50% when the total curve of one group of particle bodies is 100%, and the maximum particle The diameter is the particle diameter at which the cumulative curve becomes 100%. These parameters are generally used as one of parameters for evaluating the particle size distribution. The median diameter d50 and the maximum particle diameter can be measured using a general laser diffraction / scattering particle size measuring device. Specifically, HELOS (manufactured by JEOL), Microtrac HRA (manufactured by Nikkiso) And SALD series (manufactured by Shimadzu Corporation). Particularly preferred is the SALD series (manufactured by Shimadzu Corporation).

As described above, by setting the particle diameter of the glass powder to a predetermined size, it becomes possible to obtain a kneaded glass in which the phosphor is uniformly dispersed. Thereby, primary light emitted from the LED chip can be satisfactorily scattered, and generation of bubbles that emulsify the glass in white can be suppressed, and the primary light and secondary light emitted from the phosphor can be mixed well and mixed. A kneaded glass capable of emitting light with such mixed color light (third light) can be manufactured.

Further, it is preferable that the glass powder does not precipitate crystals under the heating environment during pressure molding, or does not precipitate in a large amount even if slightly precipitated. Therefore, a glass having a crystal precipitation temperature higher than the heating temperature is preferable. For example, when the heating temperature is set to 150 ° C. to 200 ° C. higher than the glass yield point, the crystal precipitation temperature is preferably 200 ° C. or higher than the glass yield point. Specifically, P ₂ O ₅ —BaO glass, P ₂ O ₅ —ZnO glass, P ₂ O ₅ —Nb ₂ O ₅ glass, P ₂ O ₅ —B ₂ O ₃ glass, SiO ₂ glass B ₂ O ₃ —ZnO—La ₂ O ₃ glass, SiO ₂ —B ₂ O ₃ —ZnO glass, and the like can be preferably used.

Further, the phosphor content in the kneaded glass is preferably 0.02 to 12%, more preferably 0.05 to 5% in volume ratio. If the phosphor content is less than 0.02%, the amount of fluorescent light is too small, and if it exceeds 12%, the phosphor itself shields the light. Thus, if the phosphor content is 0.02 to 12%, the amount of light to be converted is not too low, and the amount of light that does not hinder the light transmission can be obtained. A kneaded glass capable of emitting mixed color light can be manufactured. In addition, when the phosphor content is 0.05 to 5%, the balance between the converted light and the light transmission is further improved, and a kneaded glass capable of emitting a better color mixture light is manufactured. Can do.

In addition, although the case where the phosphor layer supplying process is performed after the LED chip mounting process is described as an example here, the order of the LED chip mounting process and the phosphor layer supplying process is not limited thereto. The LED chip mounting step may be performed after the phosphor layer supplying step. For example, it is also preferable to arrange each LED chip 10 on the lower mold 60 after arranging a large number of LED chips 10 and supplying the phosphor layer 30.

(Sealing process)
After the LED chip placing step and the phosphor layer supplying step, a molten glass droplet 44 having a temperature higher than that of the lower die 60 is dropped on the lower die 60 on which the LED chip 10 supplied with the phosphor layer 30 is placed. Then, the phosphor layer 30 is sealed with the glass member 40 by solidifying. FIGS. 3A to 3C are schematic views sequentially showing the states in the sealing process.

The dropping of the molten glass droplet 44 is performed by heating a pipe-shaped dropping nozzle 41 connected to a melting tank (not shown) containing molten glass to a predetermined temperature by a heater 42. When the dripping nozzle 41 is heated to a predetermined temperature, the molten glass 43 is supplied to the tip of the dripping nozzle 41 by its own weight and accumulates in a droplet shape by the surface tension (FIG. 3A). When the molten glass 43 collected at the tip of the dropping nozzle 41 reaches a certain mass, it is separated from the dropping nozzle 41 by gravity and becomes a molten glass droplet 44 that drops downward (FIG. 3B).

The mass of the molten glass droplet 44 dropped from the dropping nozzle 41 can be adjusted by the outer diameter of the tip of the dropping nozzle 41 and the like, and depending on the type of glass, the molten glass droplet 44 of about 0.1 to 2 g is dropped. Can be made. In addition to the method of separating from the dropping nozzle 41 only by gravity, a method of pressurizing and extruding the molten glass 43 or a method of separating by applying an external force such as airflow or vibration may be used. Compared with the method of pouring glass directly, the glass mass can be reduced, the mass can be easily adjusted, and the glass temperature to be sealed at the time of dropping is lowered, so that damage to the LED chip due to glass heat can be alleviated.

Further, the molten glass droplet 44 dropped from the dropping nozzle 41 is once collided with a member provided with a through-hole, and a part of the collided molten glass droplet 44 is passed through the through-pore, thereby miniaturizing. The molten glass droplet 44 may be dropped. By using such a method, it is possible to obtain a minute molten glass droplet 44 of 0.01 g to 0.1 g, and therefore, a light emission smaller than that when the molten glass droplet 44 dropped from the dropping nozzle 41 is used as it is. A diode unit can be manufactured. By passing through the through pore member, the temperature of the dropping glass to be sealed can be further lowered, and damage to the LED chip due to glass heat can be alleviated. Further, by changing the through-pore diameter, the pore shape, and the pore length, it is possible to further control the mass of the dropped glass.

The lower mold 60 is preferably heated to a predetermined temperature in advance. Thereby, the shape of the surface of the glass member formed by the transfer of the lower mold 60 is stabilized. The predetermined temperature is lower than the temperature of the molten glass droplet 44 to be dropped and is a temperature at which the dropped molten glass droplet 44 is cooled and solidified, and may be appropriately selected according to the type of glass to be used. If the temperature of the lower mold 60 is too low, the shape of the surface of the glass member formed by transfer becomes unstable, and wrinkles are likely to occur. On the other hand, if the temperature is set higher than necessary, the life of the lower mold 60 tends to be shortened due to fusion with the glass, surface oxidation, or the like. From these viewpoints, the temperature of the lower mold 60 is preferably set in the range of Tg-100 ° C. to Tg + 100 ° C., where Tg is the glass transition temperature of the glass used, and the range of Tg−100 ° C. to Tg + 50 ° C. It is more preferable to set to. As the heating means for heating the lower mold 60, a known heating means can be appropriately selected and used. For example, an infrared heating device, a high frequency induction heating device, a cartridge heater used by being embedded in the lower die 60, a sheet heater used by contacting the outside of the lower die 60, and the like are suitable.

The molten glass droplet 44 dropped on the lower mold 60 is rapidly cooled and solidified by heat conduction to the lower mold 60 and the like, and the phosphor layer 30 is sealed with the glass member 40 to form the light emitting diode unit 50. (FIG. 3C). Depending on the size of the molten glass droplet 44 and the like, the solidification is usually completed several seconds to several tens of seconds after the molten glass droplet 44 is dropped.

Thus, according to the method of the present embodiment, since it is not necessary to directly heat the LED chip 10 and the phosphor layer 30 with the heater, these members are heated for a short time by heat conduction from the molten glass droplet 44. As a result, deterioration due to heat can be sufficiently suppressed. Further, the sealing of the phosphor layer 30 can be completed in a very short time. Furthermore, since the phosphor layer 30 can be sealed with the glass member 40 without applying a high pressure simply by dropping the molten glass droplet 44, damage to the member due to pressure can be suppressed.

There is no particular limitation on the type of glass that can be used, and a known glass can be selected and used depending on the application. Examples thereof include optical glasses such as borosilicate glass, silicate glass, phosphate glass, and lanthanum glass. From the viewpoint of suppressing light reflection on the surface 12 of the LED chip 10 and further improving the light extraction efficiency, it is preferable to use glass having a small difference in refractive index from the LED chip 10.

(Modification of sealing process)
4A to 4C are schematic views showing a modification of the sealing process in the first embodiment. The sealing step shown in FIG. 4 is different from the sealing step shown in FIG. 3 in that the lower mold 60 is inclined by an angle θ, and the molten glass droplet 44 having a temperature higher than that of the inclined lower mold 60 is It is dropped on the lower mold 60. Others are the same as those described in FIG.

4A and 4B, the tilt angle θ of the lower mold 60 when the molten glass droplet 44 is dropped is preferably 0.1 ° to 10 ° with respect to the horizontal. In this manner, by configuring the molten glass droplet 44 to be dropped while the lower die 60 is inclined, the occurrence of air pockets in the lower die 60 at the time of dropping can be suppressed. When the inclination angle θ is greater than 10 °, the dropped molten glass may be inclined or protruded, which may adversely affect the surface accuracy of the glass member 40 after solidification.

It should be noted that the inclination angle θ of the lower mold 60 when the molten glass droplet 44 is dropped is more preferably 3 ° to 7 °. If it is this angle range, the inclination of the dripped molten glass does not generate | occur | produce and the generation | occurrence | production of the air pocket in the lower mold | type 60 at the time of dripping does not occur, and is more preferable.

FIG. 5 is a cross-sectional view of the light emitting diode unit 50 manufactured by the method of the present embodiment. 5A to 5C show a light emitting diode unit 50 manufactured by dropping a molten glass droplet 44 on the LED chip 10 or the like shown in FIGS. 2A to 2C, respectively. Thus, since the phosphor layer 30 is sealed with the glass member 40 in the light emitting diode unit 50 manufactured by the method of the present embodiment, deterioration of the sealing material due to heat generation of the LED chip 10 is suppressed. In addition, high extraction efficiency can be ensured. Further, deterioration of the phosphor layer 30 due to the influence of the external environment is suppressed, and the durability is excellent.

The surface 45 of the glass member 40 has a gentle convex shape, but the degree of convexity of the surface 45 can be adjusted by changing the temperature and size of the molten glass droplet 44 to be dropped. For example, when the temperature of the molten glass droplet 44 to be dropped is increased, the viscosity is lowered, and the surface 45 of the glass member 40 has a flatter shape (the curvature is reduced). On the contrary, when the temperature of the molten glass droplet 44 is lowered, the viscosity increases, and the surface 45 of the glass member 40 has a shape with a larger convexity (the curvature increases). Thus, the surface 45 of the glass member 40 can be made into an appropriate shape according to the required condensing characteristic by changing the conditions for dropping the molten glass droplet 44.

Also, for example, as shown in FIG. 1A, the lower mold 60 of the electrode unit 11 is dropped by dropping the molten glass droplet 44 in a state where the electrode unit 11 on the back surface side of the LED chip 10 is in contact with the lower mold 60. The contact surface can be exposed without being sealed by the glass member 40 (FIG. 4A). Thus, the electrical connection for supplying electric power to the LED chip 10 can be easily performed by sealing with the glass member 40 so that at least a part of the electrode portion 11 is exposed.

After the molten glass droplet 44 is solidified, the exposed portion of the electrode portion 11 is electrically connected to the lead portion 21 of the package substrate 20 having the lead portion 21 for supplying power to the LED chip 10 via the electrode portion 11. It is also preferable to manufacture the light emitting diode unit 50 integrated with the package substrate 20 by providing a process. FIG. 6 is a cross-sectional view of the light emitting diode unit 50 connected to the package substrate 20. FIGS. 6A to 6C show cases where the package substrate 20 is connected to the light emitting diode unit 50 shown in FIGS. 5A to 5C.

The package substrate 20 has a lead portion 21 for supplying power to the LED chip 10 via the electrode portion 11. The material of the package substrate 20 is preferably a highly insulating ceramic material such as aluminum nitride or aluminum oxide. Further, a heat resistant resin or a metal material may be used. In the case of a conductive material, an insulating film is preferably provided on the surface.

For the connection between the electrode portion 11 of the LED chip 10 and the lead portion 21 of the package substrate 20, a normal flip chip bonding method may be used. For example, bumps (protrusions) made of a conductive material are provided on the lead portion 21, the package substrate 20 is fixed on a high-temperature heater, and the load is adjusted while adjusting the position of the LED chip 10 and the package substrate 20 by image processing. The method of connecting by adding. When connecting, it is also preferable to apply ultrasonic waves in addition to the heat and load of the heater. Further, as described above, in the case where the lower mold 60 is provided with the slope 62, the slope 46 formed on the glass member is used as a positioning surface, thereby eliminating the need for image processing or the like for position adjustment. You can also.

<Second Embodiment>
Next, the manufacturing method of the light emitting diode unit of 2nd Embodiment is demonstrated with reference to FIG. 7, FIG. The manufacturing method of the light emitting diode unit of this embodiment is a lower mold in which the LED chip supplied with the phosphor layer is placed after the LED chip placing step and the phosphor layer supplying step described in the first embodiment. A molten glass droplet having a temperature higher than that of the lower mold is dropped on the upper mold, and the molten glass droplet is pressed with the upper mold facing the lower mold before the molten glass drop is solidified, so that the glass member has a predetermined shape. It has the process (sealing process) which shape | molds. Since the LED chip mounting step and the phosphor layer supplying step are the same as those in the first embodiment described above, the subsequent sealing step will be described here.

FIGS. 7A to 7D are schematic views sequentially showing the sealing process in the second embodiment. First, similarly to the case of the first embodiment, a molten glass droplet 44 having a temperature higher than that of the lower die 60 is dropped on the lower die 60 on which the LED chip 10 supplied with the phosphor layer 30 is placed. (FIGS. 7A and 7B). The molten glass droplet 44 is dropped by heating the dropping nozzle 41 to a predetermined temperature by the heater 42. The details of the dropping method of the molten glass droplet 44 are the same as in the case of the first embodiment.

In the sealing step in the second embodiment, after dropping the molten glass droplet 44, the lower mold 60 is moved to a position facing the upper mold 70, and the molten glass droplet 44 is pressurized before being cooled and solidified, The glass member 40 is formed into a predetermined shape (FIG. 7C). The molten glass droplet 44 is rapidly cooled by heat conduction to the lower mold 60 and the upper mold 70 and solidifies in a short time to become the glass member 40. After releasing the pressure, the upper mold 70 is moved upward, and the obtained light emitting diode unit 50 is recovered (FIG. 7D). Thus, in this embodiment, since the dropped molten glass droplet 44 is pressurized and deformed, the pressure load is much higher than when the glass sheet is heated and pressurized together with the members such as the LED chip 10. It can be kept small, and can be sufficiently deformed in a very short pressurization time. Therefore, the light emitting diode unit 50 can be manufactured in a short time while sufficiently suppressing deterioration due to temperature and damage due to pressure of each member.

The preferred material of the upper mold 70 is the same as that of the lower mold 60 described above. Further, like the lower mold 60, the upper mold 70 is preferably preheated to a predetermined temperature. The heating temperature of the lower mold 60 and the upper mold 70 may be the same or different.

The load applied to deform the molten glass droplet 44 and the pressurizing time may be appropriately set according to the size of the molten glass droplet 44, etc. Usually, a load in the range of several tens to several hundreds N is from several seconds to In many cases, it is sufficient to apply pressure for several tens of seconds. Further, the applied load may be changed with time. The means for applying the load is not particularly limited, and known driving means such as an air cylinder, a hydraulic cylinder, a servo motor, etc. may be appropriately selected and used.

FIG. 8 is a cross-sectional view of the light emitting diode unit 50 manufactured by the method of the present embodiment. FIG. 8A shows a light emitting diode unit 50 having one LED chip 10. 8B and 8C show a light emitting diode unit 50 in which three LED chips 10 are integrated by a glass member 40. FIG.

According to the method of the present embodiment, the shape of the surface 45 of the glass member 40 is formed by forming the molten glass droplet 44 dropped on the lower mold 60 with the upper mold 70, so that a desired shape corresponding to the application is formed. It can be formed easily. For example, like the light emitting diode unit 50 of FIG. 8A, the surface 45 of the glass member 40 can have a convex shape with a very large curvature, or like the light emitting diode unit 50 of FIG. 8C. In addition, a plurality of convex portions corresponding to the plurality of LED chips 10 may be arranged. In this way, even when the shape is such that it cannot be formed without applying high temperature and high pressure over a long period of time by a method of heating and pressing a conventionally known glass sheet together with the members such as the LED chip 10, it takes a very short time. It can be formed by applying a small pressure.

As in the case of the first embodiment, after the molten glass droplet 44 is solidified, a step of electrically connecting the electrode portion 11 of the LED chip 10 and the lead portion 21 of the package substrate 20 is provided, and the package It is also preferable to manufacture the light emitting diode unit 50 integrated with the substrate 20.

(Modification of sealing process)
FIGS. 9A to 9D are schematic views showing a modification of the sealing process in the second embodiment. 9 differs from the sealing process shown in FIG. 7 in FIGS. 9A and 9B in the modification of the sealing process according to the first embodiment shown in FIG. Similarly to the example, the lower mold 60 is inclined by the angle θ, and a molten glass droplet 44 having a temperature higher than that of the inclined lower mold 60 is dropped on the lower mold 60. This is the same as that described in.

That is, as shown in FIGS. 9A and 9B, a molten glass droplet 44 having a temperature higher than that of the package substrate 20 is dropped on the lower mold 60 inclined by the angle θ. Next, the lower mold 60 on which the molten glass droplet 44 is dropped is returned to a horizontal position, the lower mold 60 is moved to a position facing the upper mold 70, and the molten glass droplet 44 is added by the upper mold 70 before being cooled and solidified. The glass member 40 is molded into a predetermined shape (FIG. 9C). Thereafter, similarly to FIG. 7, after releasing the pressurization, the upper mold 70 is moved upward, and the obtained light emitting diode unit 50 is recovered (FIG. 9D).

As shown in FIGS. 9A and 9B, the inclination angle θ of the lower mold 60 when the molten glass droplet 44 is dropped is preferably 0.1 ° to 10 ° with respect to the horizontal. In this way, with the lower mold 60 tilted, the molten glass droplet 44 is dropped, the lower mold 60 is returned to the horizontal, and the molten glass droplet 44 is pressurized with the upper mold 70 before being cooled and solidified. By comprising in this, generation | occurrence | production of the air pocket in the lower mold | type 60 at the time of dripping can be suppressed. When the inclination angle θ is larger than 10 °, the dropped molten glass may be inclined or protruded, which may adversely affect the surface shape accuracy of the glass member transferred by the molding surface 74 of the upper mold 70.

It should be noted that the inclination angle θ of the lower mold 60 when the molten glass droplet is dropped is more preferably 3 ° to 7 °. With this angle range, there is no tilt of the dropped molten glass, no air pool in the lower mold 60 is dropped, and the surface shape accuracy of the glass member transferred by the molding surface 74 is more preferable. State.

<Third Embodiment>
Next, the manufacturing method of the light emitting diode unit of 3rd Embodiment is demonstrated with reference to FIG. The manufacturing method of the light emitting diode unit according to the present embodiment includes a step of temporarily fixing the surface of the LED chip downward (LED chip mounting step) and a step of supplying a phosphor layer to the surface of the LED chip ( A phosphor layer supplying step), and a molten glass droplet having a temperature higher than that of the lower die is dropped on the lower die, and the LED chip is temporarily fixed before the molten glass droplet dropped on the lower die is solidified. And a step of sealing the phosphor with a glass member by pressurizing the molten glass droplet with the upper mold (sealing step).

In the LED chip mounting step in the present embodiment, the surface of the LED chip 10 is temporarily fixed to the upper mold 70 with the surface facing downward. Solder or the like may be used for temporary fixing. Other details are the same as those in the first embodiment. The phosphor layer supplying step is the same as in the first embodiment.

FIGS. 10A to 10D are schematic views sequentially showing the sealing process in the third embodiment. First, a molten glass droplet 44 having a temperature higher than that of the lower mold 60 is dropped on the molding surface 64 of the lower mold 60 having the molding surface 64 of a predetermined shape (FIGS. 10A and 10B). The molten glass droplet 44 is dropped by heating the dropping nozzle 41 to a predetermined temperature by the heater 42. The details of the dropping method of the molten glass droplet 44 are the same as in the case of the first embodiment.

Next, at a predetermined timing before the dropped molten glass droplet 44 is cooled and solidified, the molten glass droplet 44 is pressurized with the upper mold 70 to which the LED chip 10 supplied with the phosphor layer 30 is temporarily fixed. (FIG. 10 (c)). The molten glass droplet 44 is rapidly cooled by heat conduction to the lower mold 60 and the upper mold 70 and solidifies in a short time to become the glass member 40. After releasing the pressure, the upper mold 70 is moved upward, the temporary fixing is removed, and the light emitting diode unit 50 is recovered (FIG. 10D).

The timing for pressurizing the molten glass droplet 44 with the upper die 70 on which the LED chip 10 is placed is preferably slower from the viewpoint of suppressing deterioration of the phosphor layer 30 and the like due to heat, but if too late, the phosphor layer The pressure required for sealing 30 etc. will become high. From such a viewpoint, it is preferable to pressurize several seconds to several tens of seconds after dropping the molten glass droplet 44 on the lower mold 60. What is necessary is just to set suitably the load and pressurization time to apply similarly to 2nd Embodiment. Moreover, it is preferable that the lower mold | type 60 and the upper mold | type 70 are previously heated to predetermined temperature. The details of the temperature and material of the lower mold 60 and the upper mold 70 are the same as in the case of the second embodiment described above.

Thus, in this embodiment, since the molten glass droplet 44 is dropped on the molding surface 64 having a predetermined shape, the glass member 40 can be formed in a desired shape without applying high pressure. The LED chip 10 and the phosphor layer 30 are sealed in the molten glass droplet 44 at a predetermined timing after the dropped molten glass droplet 44 is cooled to some extent. The influence of heat can be minimized. Accordingly, the light emitting diode unit 50 can be manufactured in a short time while sufficiently suppressing deterioration due to temperature and damage due to pressure of each member.

DESCRIPTION OF SYMBOLS 10 LED chip 11 Electrode part 12 Surface 20 Package board 21 Lead part 30 Phosphor layer 31 Glass plate 40 Glass member 41 Dripping nozzle 42 Heater 43 Molten glass 44 Molten glass droplet 45 Surface 46 Slope part 50 Light emitting diode unit 60 Lower mold 62 Slope Part 64 Molding surface 70 Upper mold 74 Molding surface

Claims

An LED chip that emits light of a predetermined wavelength from the surface;
A phosphor for converting the wavelength of light emitted from the LED chip;
A glass member for sealing the phosphor, and a manufacturing method of a light emitting diode unit comprising:
Placing the LED chip on the lower mold;
Supplying the phosphor to the surface of the LED chip;
On the lower mold on which the LED chip supplied with the phosphor is mounted, a molten glass droplet having a temperature higher than that of the lower mold is dropped and solidified to seal the phosphor with a glass member. And a process for producing the light emitting diode unit.
Before the molten glass droplet dripped on the lower mold is solidified, the molten glass droplet is pressurized with an upper mold facing the lower mold, and the glass member is formed into a predetermined shape, The manufacturing method of the light emitting diode unit of Claim 1.
An LED chip that emits light of a predetermined wavelength from the surface;
A phosphor for converting the wavelength of light emitted from the LED chip;
A glass member for sealing the phosphor, and a manufacturing method of a light emitting diode unit comprising:
Temporarily fixing the upper surface of the LED chip with the surface facing downward;
Supplying the phosphor to the surface of the LED chip;
Dropping a molten glass droplet having a temperature higher than that of the lower mold on the lower mold facing the upper mold;
Before the molten glass droplets dropped on the lower mold are solidified, pressurizing the molten glass drops with the upper mold on which the LED chip is temporarily fixed, and sealing the phosphor with a glass member; A method for producing a light-emitting diode unit, comprising:
The LED chip has an electrode part on the back side facing the surface,
The method for manufacturing a light-emitting diode unit according to any one of claims 1 to 3, wherein sealing with the glass member is performed so that at least a part of the electrode portion is exposed.
Step of electrically connecting the exposed portion of the electrode portion and the lead portion of the package substrate having a lead portion for supplying power to the LED chip through the electrode portion after the molten glass droplet is solidified The method of manufacturing a light emitting diode unit according to claim 4, wherein:
The method of manufacturing a light emitting diode unit according to any one of claims 1 to 5, wherein the phosphor is supplied by applying the phosphor on the surface of the LED chip.
The supply of the phosphor is performed by forming a glass body containing the phosphor on the surface of the LED chip by applying and heating a composition in which the phosphor is dispersed. Item 6. The method for producing a light-emitting diode unit according to any one of Items 1 to 5.
The method for producing a light-emitting diode unit according to claim 7, wherein the composition contains an organometallic compound, a layered silicate mineral, inorganic fine particles, an organic solvent, and water.
The method of manufacturing a light-emitting diode unit according to claim 8, wherein the organometallic compound is polysiloxane and the layered silicate mineral is smectite.
The method for producing a light-emitting diode unit according to claim 7, wherein the composition contains an inorganic polymer and an organic solvent.
The method for manufacturing a light emitting diode unit according to claim 10, wherein the inorganic polymer is polysilazane.
The light emitting diode unit according to claim 1, wherein the phosphor is supplied by placing a glass plate having the phosphor on the surface of the LED chip. Manufacturing method.
The method for manufacturing a light emitting diode unit according to claim 12, wherein the glass plate is a kneaded glass in which the phosphor is dispersed.
3. The light emitting diode according to claim 1, wherein a plurality of the LED chips are arranged on the lower mold, and the plurality of LED chips are integrated by dropping one drop of the molten glass drop. 4. Unit manufacturing method.
The said fluorescent substance is supplied by mounting one glass plate which has the said fluorescent substance so that it may straddle over the said surface of the some said arranged LED chip, It is characterized by the above-mentioned. Manufacturing method of light emitting diode unit.