WO2011065322A1 - Procédé de fabrication d'unité de diodes électroluminescentes - Google Patents

Procédé de fabrication d'unité de diodes électroluminescentes Download PDF

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Publication number
WO2011065322A1
WO2011065322A1 PCT/JP2010/070786 JP2010070786W WO2011065322A1 WO 2011065322 A1 WO2011065322 A1 WO 2011065322A1 JP 2010070786 W JP2010070786 W JP 2010070786W WO 2011065322 A1 WO2011065322 A1 WO 2011065322A1
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WO
WIPO (PCT)
Prior art keywords
phosphor
led chip
emitting diode
diode unit
glass
Prior art date
Application number
PCT/JP2010/070786
Other languages
English (en)
Japanese (ja)
Inventor
卓史 波多野
修志 池永
禄人 田口
Original Assignee
コニカミノルタオプト株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by コニカミノルタオプト株式会社 filed Critical コニカミノルタオプト株式会社
Publication of WO2011065322A1 publication Critical patent/WO2011065322A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B11/00—Pressing molten glass or performed glass reheated to equivalent low viscosity without blowing
    • C03B11/14—Pressing laminated glass articles or glass with metal inserts or enclosures, e.g. wires, bubbles, coloured parts
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2215/00—Press-moulding glass
    • C03B2215/61—Positioning the glass to be pressed with respect to the press dies or press axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin

Abstract

La présente invention concerne un procédé de fabrication d'unité de diodes électroluminescentes, comprenant les étapes suivantes: une étape lors de laquelle une puce LED est placée sur une matrice de moulage inférieure ; une étape lors de laquelle un matériau de phosphore est déposé à la surface de la puce LED ; et une étape lors de laquelle le matériau de phosphore est encapsulé au moyen d'un élément de verre par la chute d'une gouttelette de verre fondu à une température supérieure à celle de la matrice de moulage inférieure et la solidification de la gouttelette sur la matrice de moulage inférieure, sur laquelle est placée la puce LED recouverte du matériau de phosphore qui y a été fournie. Ainsi, l'unité de diodes électroluminescentes peut être fabriquée dans un court laps de temps, tout en supprimant la détérioration et la rupture de la puce LED, de la couche de matériau de phosphore et analogues.
PCT/JP2010/070786 2009-11-30 2010-11-22 Procédé de fabrication d'unité de diodes électroluminescentes WO2011065322A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2009-271224 2009-11-30
JP2009271224 2009-11-30
JP2010067519 2010-03-24
JP2010-067519 2010-03-24

Publications (1)

Publication Number Publication Date
WO2011065322A1 true WO2011065322A1 (fr) 2011-06-03

Family

ID=44066427

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2010/070786 WO2011065322A1 (fr) 2009-11-30 2010-11-22 Procédé de fabrication d'unité de diodes électroluminescentes

Country Status (1)

Country Link
WO (1) WO2011065322A1 (fr)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013051280A1 (fr) * 2011-10-07 2013-04-11 コニカミノルタアドバンストレイヤー株式会社 Liquide de dispersion de substance luminescente et procédé de production pour dispositif à diodes électroluminescentes le mettant en œuvre
WO2013051281A1 (fr) * 2011-10-07 2013-04-11 コニカミノルタアドバンストレイヤー株式会社 Procédé de fabrication de dispositif à del et solution à matière fluorescente dispersée utilisée dans celui-ci
WO2013054658A1 (fr) * 2011-10-12 2013-04-18 コニカミノルタアドバンストレイヤー株式会社 Élément de conversion de longueur d'onde et son procédé de fabrication, dispositif électroluminescent et son procédé de fabrication, et mélange liquide
JP2013084796A (ja) * 2011-10-11 2013-05-09 Konica Minolta Advanced Layers Inc Ｌｅｄ装置およびその製造方法、並びにそれに用いる蛍光体分散液
CN103165797A (zh) * 2013-03-13 2013-06-19 上海大学 白光led薄膜封装用荧光粉预制薄膜及其制备方法
JP2013166886A (ja) * 2012-02-16 2013-08-29 Konica Minolta Inc 蛍光体分散液の製造方法、およびそれを用いてｌｅｄ装置を製造する方法
US8822032B2 (en) 2010-10-28 2014-09-02 Corning Incorporated Phosphor containing glass frit materials for LED lighting applications
JP2015001158A (ja) * 2013-06-13 2015-01-05 株式会社日本自動車部品総合研究所 光学素子封止構造体とその製造方法、及び、レーザ点火装置
US9011720B2 (en) 2012-03-30 2015-04-21 Corning Incorporated Bismuth borate glass encapsulant for LED phosphors
US9202996B2 (en) 2012-11-30 2015-12-01 Corning Incorporated LED lighting devices with quantum dot glass containment plates
US10017849B2 (en) 2012-11-29 2018-07-10 Corning Incorporated High rate deposition systems and processes for forming hermetic barrier layers
US10096753B2 (en) 2013-08-07 2018-10-09 Nichia Corporation Light emitting device
US10158057B2 (en) 2010-10-28 2018-12-18 Corning Incorporated LED lighting devices
US10439109B2 (en) 2013-08-05 2019-10-08 Corning Incorporated Luminescent coatings and devices

Citations (10)

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JP2003292327A (ja) * 2002-04-01 2003-10-15 Minolta Co Ltd 光学素子の製造方法
JP2004153109A (ja) * 2002-10-31 2004-05-27 Matsushita Electric Works Ltd 発光装置及びその製造方法
JP2004304161A (ja) * 2003-03-14 2004-10-28 Sony Corp 発光素子、発光装置、画像表示装置、発光素子の製造方法及び画像表示装置の製造方法
JP2004339039A (ja) * 2003-05-19 2004-12-02 Minolta Co Ltd 光学素子製造方法
JP2005079540A (ja) * 2003-09-03 2005-03-24 Matsushita Electric Works Ltd 発光素子及びその製造方法
JP2005303285A (ja) * 2004-03-18 2005-10-27 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子、その製造方法及びｌｅｄランプ
JP2008034546A (ja) * 2006-07-27 2008-02-14 Nichia Chem Ind Ltd 発光装置
JP2008124153A (ja) * 2006-11-09 2008-05-29 Toyoda Gosei Co Ltd 発光装置及びその製造方法
JP2008244357A (ja) * 2007-03-28 2008-10-09 Toshiba Corp 半導体発光装置
JP2009256670A (ja) * 2008-03-28 2009-11-05 Mitsubishi Chemicals Corp 硬化性ポリシロキサン組成物、並びに、それを用いたポリシロキサン硬化物、光学部材、航空宇宙産業用部材、半導体発光装置、照明装置、及び画像表示装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003292327A (ja) * 2002-04-01 2003-10-15 Minolta Co Ltd 光学素子の製造方法
JP2004153109A (ja) * 2002-10-31 2004-05-27 Matsushita Electric Works Ltd 発光装置及びその製造方法
JP2004304161A (ja) * 2003-03-14 2004-10-28 Sony Corp 発光素子、発光装置、画像表示装置、発光素子の製造方法及び画像表示装置の製造方法
JP2004339039A (ja) * 2003-05-19 2004-12-02 Minolta Co Ltd 光学素子製造方法
JP2005079540A (ja) * 2003-09-03 2005-03-24 Matsushita Electric Works Ltd 発光素子及びその製造方法
JP2005303285A (ja) * 2004-03-18 2005-10-27 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子、その製造方法及びｌｅｄランプ
JP2008034546A (ja) * 2006-07-27 2008-02-14 Nichia Chem Ind Ltd 発光装置
JP2008124153A (ja) * 2006-11-09 2008-05-29 Toyoda Gosei Co Ltd 発光装置及びその製造方法
JP2008244357A (ja) * 2007-03-28 2008-10-09 Toshiba Corp 半導体発光装置
JP2009256670A (ja) * 2008-03-28 2009-11-05 Mitsubishi Chemicals Corp 硬化性ポリシロキサン組成物、並びに、それを用いたポリシロキサン硬化物、光学部材、航空宇宙産業用部材、半導体発光装置、照明装置、及び画像表示装置

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10158057B2 (en) 2010-10-28 2018-12-18 Corning Incorporated LED lighting devices
US8822032B2 (en) 2010-10-28 2014-09-02 Corning Incorporated Phosphor containing glass frit materials for LED lighting applications
JPWO2013051280A1 (ja) * 2011-10-07 2015-03-30 コニカミノルタ株式会社 蛍光体分散液、及びこれを用いたｌｅｄ装置の製造方法
WO2013051280A1 (fr) * 2011-10-07 2013-04-11 コニカミノルタアドバンストレイヤー株式会社 Liquide de dispersion de substance luminescente et procédé de production pour dispositif à diodes électroluminescentes le mettant en œuvre
WO2013051281A1 (fr) * 2011-10-07 2013-04-11 コニカミノルタアドバンストレイヤー株式会社 Procédé de fabrication de dispositif à del et solution à matière fluorescente dispersée utilisée dans celui-ci
US9318646B2 (en) 2011-10-07 2016-04-19 Konica Minolta, Inc. LED device manufacturing method and fluorescent material-dispersed solution used in same
JPWO2013051281A1 (ja) * 2011-10-07 2015-03-30 コニカミノルタ株式会社 Ｌｅｄ装置の製造方法、およびそれに用いる蛍光体分散液
EP2752898A4 (fr) * 2011-10-07 2015-09-09 Konica Minolta Inc Liquide de dispersion de substance luminescente et procédé de production pour dispositif à diodes électroluminescentes le mettant en uvre
US9184352B2 (en) 2011-10-07 2015-11-10 Konica Minolta, Inc. Phosphor dispersion liquid, and production method for LED device using same
EP2752897A4 (fr) * 2011-10-07 2015-04-29 Konica Minolta Inc Procédé de fabrication de dispositif à del et solution à matière fluorescente dispersée utilisée dans celui-ci
JP2013084796A (ja) * 2011-10-11 2013-05-09 Konica Minolta Advanced Layers Inc Ｌｅｄ装置およびその製造方法、並びにそれに用いる蛍光体分散液
WO2013054658A1 (fr) * 2011-10-12 2013-04-18 コニカミノルタアドバンストレイヤー株式会社 Élément de conversion de longueur d'onde et son procédé de fabrication, dispositif électroluminescent et son procédé de fabrication, et mélange liquide
JPWO2013054658A1 (ja) * 2011-10-12 2015-03-30 コニカミノルタ株式会社 波長変換素子及びその製造方法、発光装置及びその製造方法、混合液
JP2013166886A (ja) * 2012-02-16 2013-08-29 Konica Minolta Inc 蛍光体分散液の製造方法、およびそれを用いてｌｅｄ装置を製造する方法
US9011720B2 (en) 2012-03-30 2015-04-21 Corning Incorporated Bismuth borate glass encapsulant for LED phosphors
US9624124B2 (en) 2012-03-30 2017-04-18 Corning Incorporated Bismuth borate glass encapsulant for LED phosphors
US10023492B2 (en) 2012-03-30 2018-07-17 Corning Incorporated Bismuth borate glass encapsulant for LED phosphors
US10017849B2 (en) 2012-11-29 2018-07-10 Corning Incorporated High rate deposition systems and processes for forming hermetic barrier layers
US9202996B2 (en) 2012-11-30 2015-12-01 Corning Incorporated LED lighting devices with quantum dot glass containment plates
CN103165797A (zh) * 2013-03-13 2013-06-19 上海大学 白光led薄膜封装用荧光粉预制薄膜及其制备方法
JP2015001158A (ja) * 2013-06-13 2015-01-05 株式会社日本自動車部品総合研究所 光学素子封止構造体とその製造方法、及び、レーザ点火装置
US10439109B2 (en) 2013-08-05 2019-10-08 Corning Incorporated Luminescent coatings and devices
US10096753B2 (en) 2013-08-07 2018-10-09 Nichia Corporation Light emitting device

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