WO2011055671A1 - Procédé de formation de couche et procédé de formation de condensateur - Google Patents

Procédé de formation de couche et procédé de formation de condensateur Download PDF

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Publication number
WO2011055671A1
WO2011055671A1 PCT/JP2010/069125 JP2010069125W WO2011055671A1 WO 2011055671 A1 WO2011055671 A1 WO 2011055671A1 JP 2010069125 W JP2010069125 W JP 2010069125W WO 2011055671 A1 WO2011055671 A1 WO 2011055671A1
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Prior art keywords
film
gas
plasma
stress
forming method
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PCT/JP2010/069125
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English (en)
Japanese (ja)
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誠志 村上
麻由子 石川
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東京エレクトロン株式会社
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions

Definitions

  • the present invention relates to a film forming method for forming a thin film on the surface of a semiconductor wafer or the like and a capacitor forming method.
  • a desired transistor element is formed by repeatedly performing film formation, etching, thermal diffusion, oxidation, etc. on the surface of a semiconductor wafer or glass substrate.
  • resistance elements, capacitors, and the like are integrated and formed at a high density.
  • the miniaturization of each element tends to further progress.
  • the occupied area of each cell becomes smaller due to the trend toward miniaturization.
  • the insulation layer between the capacitor electrodes can be secured even if the occupied area is reduced. It is sufficient to reduce the thickness or increase the dielectric constant of this dielectric. However, reducing the thickness of this insulating layer degrades the insulation, and various materials can be used to make the material high dielectric. There are currently technical problems.
  • Patent Document 1 a capacitor structure in which the capacitor is formed into a cylindrical shape or a cylindrical shape has been proposed (for example, Patent Document 1). .
  • a cylindrical capacitor in a DRAM memory cell includes a cylindrical lower electrode connected to a contact plug extending from one of source / drain regions formed on a main surface of a silicon substrate (semiconductor wafer) with a gate electrode interposed therebetween.
  • a high dielectric constant film such as HfO 2 formed on the surface of the cylindrical lower electrode, and an upper electrode formed on the surface of the high dielectric constant film, and titanium nitride is used as the lower electrode and the upper electrode.
  • a (TiN) film is used.
  • a large number of cylindrical capacitors having such a structure are arranged in a matrix on the main surface of the Si substrate.
  • This titanium nitride film is formed by a thermal CVD (Chemical Vapor Deposition) method, which is a high step coverage film forming method, since it is necessary to sufficiently coat the fine cylindrical lower electrode.
  • a thermal CVD method for example, TiCl 4 is used as a source gas, NH 3 is used as a nitriding gas, and these are supplied onto a heated substrate to form a TiN film on the substrate.
  • film formation is also performed by SFD (Sequential Flow Deposition) processing in which the step of supplying the source gas and the nitriding gas and the step of supplying only the nitriding gas are alternately performed with a purge interposed therebetween.
  • the specific resistance of the film decreases as the film forming temperature is increased.
  • the stress of the film increases.
  • the specific resistance of the film and the stress of the film have a contradictory relationship, and a high-quality film having a high specific resistance increases the stress.
  • a film having a very low specific resistance can be obtained by low-temperature film formation by SFD, but the stress of the film becomes particularly high.
  • Such a problem may also occur when another film such as a tungsten (W) film is formed by thermal CVD.
  • W tungsten
  • a raw material gas containing titanium and a nitrogen-containing gas are supplied to a substrate to be processed in a processing vessel, and a titanium nitride film is formed on the substrate to be processed by heat treatment.
  • a film forming method including performing a process for reducing a film stress caused by plasma on the titanium nitride film.
  • the first step of forming a titanium nitride film on the substrate to be processed by supplying a raw material gas containing titanium and a nitrogen-containing gas to the substrate to be processed in the processing vessel and performing a heat treatment.
  • the second step of stopping the supply of the source gas and supplying the nitrogen-containing gas to nitride the titanium nitride film, and simultaneously generating plasma in the processing vessel to reduce the stress of the film A repeated film formation method is provided.
  • a source gas containing tungsten and a reducing gas are supplied to a substrate to be processed in a processing container, and a tungsten film is formed on the substrate to be processed by heat treatment.
  • a film forming method including performing a process for reducing a film stress caused by plasma on the film.
  • a capacitor forming method for forming a capacitor on a surface of a substrate to be processed, wherein a plurality of recesses are formed on a surface of an insulating layer provided on the surface of the substrate to be processed.
  • a raw material gas containing titanium and a nitrogen-containing gas are supplied to the substrate to be processed in the processing vessel, and are nitrided on the substrate to be processed by heat treatment.
  • Forming a titanium nitride film on a substrate to be processed by supplying heat to the substrate to be processed in a container and performing a treatment for reducing the stress of the film due to plasma on the titanium nitride film
  • a second thin film made of a titanium nitride film To form a second thin film made of a titanium nitride film, and to etch away the second thin film and the high dielectric constant film remaining between the plurality of cylindrical projections.
  • Forming a plurality of electrically separated capacitors is provided.
  • FIG. 1 It is sectional drawing which shows the processing apparatus as another example of the apparatus for enforcing the method of this invention. It is a figure which shows the various process conditions and measurement result when performing this invention method. It is a figure which shows an example of the timing chart of the film-forming method which performs the stress reduction process by a cycle plasma, when forming a TiN film
  • FIG. 1 is a schematic plan view showing a processing system as an example of an apparatus for carrying out the method of the present invention.
  • the processing system 10 includes first and second processing apparatuses 12 and 14 and a substantially hexagonal common transfer chamber 16 as main components.
  • the processing system 10 includes first and second load lock chambers 18A and 18B having a load lock function, and an introduction-side transfer chamber 20 having an elongated shape.
  • the first and second processing devices 12 and 14 are connected to two sides of the substantially hexagonal common transfer chamber 16 respectively, and the first and second load locks are respectively connected to the two opposite sides.
  • the chambers 18A and 18B are connected.
  • Gate valves G are interposed between the common transfer chamber 16 and the first and second processing devices 12 and 14 and between the common transfer chamber 16 and the first and second load lock chambers 18A and 18B, respectively. Being a cluster tool. These gate valves G can communicate and block between the first and second processing apparatuses 12 and 14 and the common transfer chamber 16, and between the first and second load lock chambers 18A and 18B and the common transfer chamber 16. It has become. A gate valve G is similarly interposed between the first and second load lock chambers 18A and 18B and the introduction-side transfer chamber 20, as will be described later. The first and second load lock chambers 18A and 18B can selectively realize a vacuum atmosphere and an atmospheric pressure atmosphere as the semiconductor wafer W as the object to be processed is loaded and unloaded. The inside of the common transfer chamber 16 is maintained in a vacuum atmosphere.
  • an articulated arm that can bend and extend and pivot to a position where the first and second load lock chambers 18 ⁇ / b> A and 18 ⁇ / b> B and the first and second processing devices 12 and 14 can be accessed.
  • a transport mechanism 22 having a structure is provided.
  • the transport mechanism 22 has two picks A1 and A2 that can bend and stretch independently in opposite directions, and can handle two wafers at a time.
  • the introduction-side transfer chamber 20 is formed by a horizontally long box, and one or more, 3 in the illustrated example, for introducing a semiconductor wafer as an object to be processed is formed on one side of the opposing long sides.
  • One carry-in entrance is provided, and an open / close door 24 that can be opened and closed is provided at each carry-in entrance.
  • An introduction port 26 is provided corresponding to each of the carry-in ports, and one substrate container 28 can be placed on each introduction port 26.
  • the substrate container 28 can accommodate a plurality of, for example, 25 wafers W stacked in multiple stages at an equal pitch.
  • a clean air downflow is formed in the introduction-side transfer chamber 20, and the atmosphere is set to a pressure of about atmospheric pressure.
  • an introduction side transfer mechanism 30 for transferring the wafer W along the longitudinal direction thereof is provided.
  • the introduction-side transport mechanism 30 is slidably supported on a guide rail (not shown) provided to extend along the length direction in the introduction-side transport chamber 20.
  • the introduction-side transport mechanism 30 has two arms 30A and 30B that can be bent and stretched.
  • an orienter 32 for aligning the wafer is provided at one end of the introduction-side transfer chamber 20.
  • the positioning notch of the wafer W for example, the position direction of the notch or the orientation flat or the position of the center of the wafer W is provided. The amount of deviation can be detected.
  • the first and second load lock chambers 18A and 18B are connected via the gate valve G to the other side of the opposing long side of the introduction-side transfer chamber 20.
  • a table 32 having a diameter smaller than the wafer diameter is installed to temporarily place the wafer W, and an atmospheric pressure atmosphere is provided therein. In this state, the wafer W can be carried in and out using the introduction side transfer mechanism 30.
  • the processing system 10 has a system control unit 34 composed of a computer for controlling the operation of the entire processing system.
  • the system control unit 34 controls loading and unloading operations of the semiconductor wafer W, specific operations of the first and second processing apparatuses 12 and 14, and the like.
  • the system control unit 34 is connected to a storage unit 36 having a storage medium for storing a computer-readable program necessary for these operations and operations.
  • the storage medium may be a fixed medium such as a hard disk or a portable medium such as a flexible disk, a CD-ROM, a DVD, or a flash memory.
  • the first processing apparatus 12 is an apparatus that forms a titanium nitride (TiN) film as a thin film by thermal CVD or SFD.
  • the first processing apparatus 12 includes a processing container 40 formed as a cylindrical box body, for example, from an aluminum alloy or the like.
  • a mounting table 44 is provided which is erected from the bottom by a support 42.
  • a semiconductor wafer W having a diameter of, for example, 300 mm is mounted on the upper surface of the mounting table 44.
  • the mounting table 44 is provided with elevating pins (not shown) that support the lower surface of the wafer W when the wafer W is loaded and unloaded. Further, a resistance heater 46 is provided over the entire surface of the mounting table 44 as a heating means for heating the wafer W. In addition, a loading / unloading port 49 is provided on one side of the processing container 40, and the common transfer chamber 16 is connected to the loading / unloading port 49 via a gate valve G so that the wafer W can be loaded / unloaded. It has become.
  • a shower head 50 as a gas introduction unit is provided on the ceiling of the processing container 40.
  • the shower head 50 has a large number of gas discharge holes 48A and 48B on the lower surface. Separately divided diffusion chambers 52A and 52B are formed in the shower head 50, and the gas discharge holes 48A are diffused.
  • the gas discharge hole 48B communicates with the diffusion chamber 52B. Gases are separately supplied to the diffusion chambers 52A and 52B via gas supply pipes 51A and 51B, respectively.
  • TiCl 4 gas is used as a source gas
  • NH 3 gas is used as a nitrogen-containing gas
  • TiCl 4 gas is introduced into the diffusion chamber 52A via one gas supply pipe 51A
  • NH 3 gas is the other gas.
  • the gas is introduced into the diffusion chamber 52B through the supply pipe 51B and discharged into the processing container 40 from the gas discharge holes 48A and 48B, respectively.
  • N 2 gas is also supplied as an additive gas to both the diffusion chambers 52A and 52B.
  • each gas is supplied while its flow rate is controlled by a flow controller such as a mass flow controller, and the start and stop of the supply are also controlled by an on-off valve. With these gases, a TiN film can be formed by thermal CVD or SFD without using plasma.
  • an exhaust port 54 is provided at the bottom of the processing vessel 40, and a vacuum exhaust system 56 is connected to the exhaust port 54.
  • the vacuum exhaust system 56 has an exhaust passage 58 connected to the exhaust port 54, and a pressure regulating valve 60 and a vacuum pump 62 are sequentially provided in the exhaust passage 58, so The atmosphere can be evacuated while adjusting the pressure.
  • each component of the first processing device 12 is operation-controlled by a command from the system controller 34 described above.
  • FIG. 3 is a block diagram showing the second processing apparatus.
  • the second processing apparatus 14 is an apparatus for reducing the stress of the film by performing a plasma process on the TiN film formed by the first processing apparatus 12.
  • the second processing apparatus 14 has a processing container 70 formed into a cylindrical shape by, for example, an aluminum alloy, and the processing container 70 is grounded.
  • An exhaust port 72 for exhausting the atmosphere in the container is provided at the bottom of the processing container 70, and a vacuum exhaust system 74 is connected to the exhaust port 72.
  • the evacuation system 74 has an exhaust passage 76 connected to the exhaust port 72.
  • the exhaust passage 76 has a valve opening degree for adjusting the pressure from the upstream side to the downstream side.
  • An adjustable pressure regulating valve 78 and a vacuum pump 80 are sequentially provided. Thereby, the inside of the processing container 70 can be evacuated uniformly from the bottom peripheral portion.
  • a disk-like mounting table 82 is provided on which a semiconductor wafer W having a diameter of 300 mm, for example, is mounted via a support 81 made of a conductive material.
  • the mounting table 82 is made of a conductive material such as an aluminum alloy, and also functions as a lower electrode that is one of plasma electrodes. This lower electrode is grounded.
  • a mesh-like conductive member may be embedded in a member made of ceramic such as AlN, and this conductive member may be grounded.
  • a resistance heater 84 is embedded as a heating means, so that the semiconductor wafer W can be heated and maintained at a desired temperature.
  • the mounting table 82 presses the peripheral portion of the semiconductor wafer W and fixes it on the mounting table 82, or a clamping ring (not shown), and the semiconductor wafer W is pushed up and down when the semiconductor wafer W is loaded / unloaded.
  • a lifter pin is provided.
  • a shower head 86 as a gas introducing means functioning as an upper electrode which is the other of the plasma electrodes is provided on the ceiling portion of the processing container 70, and this shower head 86 is provided integrally with the ceiling plate 88. ing.
  • the peripheral portion of the ceiling plate 88 is airtightly attached to the upper end portion of the container side wall via an insulating material 90, and the shower head 86 and the processing container 70 are insulated.
  • the shower head 86 is made of a conductive material such as an aluminum alloy.
  • a large number of gas discharge holes 92 for discharging gas are formed on the lower surface of the shower head 86.
  • a gas supply pipe 93 is connected to the upper surface of the shower head 86.
  • a plasma generation gas is supplied to the shower head 86 via a gas supply pipe 93.
  • the plasma generation gas N 2 gas, H 2 gas, NH 3 gas, or a rare gas can be suitably used, and at least one of these can be used.
  • Ar gas is suitable as the rare gas.
  • the plasma generation gas is supplied while being controlled in flow rate by a flow rate controller such as a mass flow controller, and the start and stop of the supply are also controlled by an on-off valve.
  • a high frequency power source 98 is connected to the shower head 86 via a feeder line 94 as a plasma generation mechanism for generating plasma in the processing space S between the mounting table 82 and the shower head 86.
  • a matching circuit 96 is provided in the middle of the feeder line 94.
  • the high frequency power source 98 for example, a power source having a frequency of 450 kHz can be used.
  • the mounting table 82 is grounded and high frequency power is applied to the shower head 86.
  • the present invention is not limited to this, and contrary to the above, high frequency power is applied to the mounting table 82 and the shower head 86 is grounded. You may make it do.
  • a loading / unloading port 100 for loading / unloading the semiconductor wafer W is provided on the side wall of the processing container 70, and a gate valve G that can be opened and closed airtightly when loading / unloading the semiconductor wafer W is provided in the loading / unloading port 100.
  • a gate valve G that can be opened and closed airtightly when loading / unloading the semiconductor wafer W is provided in the loading / unloading port 100.
  • FIG. 4 is a flowchart showing each step of the film forming method according to the present embodiment.
  • an unprocessed semiconductor wafer W is taken into the interior from the substrate container 28 placed on the introduction port 26 of the introduction side transfer chamber 20 by using the introduction side transfer mechanism 30, and this semiconductor wafer W is transferred to the orienter 32.
  • Perform alignment The aligned wafer W is again carried into one of the first and second load lock chambers 18A and 18B by the introduction-side transfer mechanism 30.
  • the wafer W in the load lock chamber is adjusted in pressure in the load lock chamber, and then taken into the common transfer chamber 16 that has been previously maintained in a vacuum atmosphere by the transfer mechanism 22 in the common transfer chamber 16.
  • the wafer W is first carried into the first processing apparatus 12 and a film forming process is performed (step 1).
  • the wafer W after the film forming process is then carried into the second processing apparatus 14.
  • a process for reducing the stress of the film by the plasma process is performed (step 2).
  • the processed wafer W after the completion of each process follows the path opposite to the above-described path and is accommodated in the substrate container 28 that accommodates the processed wafer W.
  • the film forming process of process 1 performed in the first processing apparatus 12 shown in FIG. 2 will be described.
  • a film formation method with good step coverage in consideration of film formation in a cylindrical shape or a cylindrical shape such as a capacitor electrode of a DRAM.
  • a source gas and a nitridation method are used without using plasma.
  • a TiN film is formed by heat using a gas.
  • the height of the lower electrode in a cylindrical or cylindrical capacitor of DRAM is about 2 to 3 ⁇ m, and its aspect ratio is about 20 to 30.
  • a simple thermal CVD method for forming a TiN film on a substrate heated by simultaneously flowing a raw material gas and a nitriding gas, a step of supplying the raw material gas and the nitriding gas, and only the nitriding gas are included.
  • An SFD method which is a thermal CVD method in which a film is formed by alternately flowing the supplying steps, or a film is formed by alternately flowing a source gas and a nitriding gas, can be preferably used.
  • the SFD method that can form a high-quality film with a relatively low temperature, less impurities, and a small specific resistance is preferable.
  • FIG. 5 is a diagram showing an example of a timing chart when a TiN film is formed by the SFD method. As shown in FIG.
  • step S1 of forming a thin film by flowing a TiCl 4 gas as a source gas and an NH 3 gas as a nitriding gas for a predetermined time, and a thin film by stopping the supply of TiCl 4 and flowing NH 3 Step S2 for nitriding the film is alternately repeated with step S3 being a purge process, to form a TiN film having a predetermined thickness.
  • step S1 and step S2 is one cycle, and the number of cycles is set according to the target film thickness.
  • step 3 which is a purge process is not essential.
  • TiCl 4 gas is introduced into the processing vessel 40 from the gas discharge hole 48A of the shower head 50 through the gas supply pipe 51A, and NH 3 gas is introduced into the gas discharge hole 48B of the shower head 50 through the gas supply pipe 51B.
  • the pressure in the processing vessel 40 is maintained at a predetermined process pressure by evacuation by the vacuum exhaust system 56.
  • the wafer W placed on the mounting table 44 is maintained at a predetermined temperature by the resistance heater 46.
  • a sequence in which TiCl 4 gas and NH 3 gas are alternately supplied with a purge interposed therebetween may be employed.
  • TiCl 4 gas is adsorbed on the surface of the wafer W by supplying TiCl 4 gas, and then TiCl 4 adsorbed by supplying NH 3 gas is nitrided to form TiN, This is repeated until a desired film thickness is obtained, and a TiN film is formed.
  • Process temperature 250-1000 ° C
  • Process pressure 13 to 1330 Pa
  • TiCl 4 gas flow rate 10-100 sccm NH 3 gas flow rate: 10 to 5000 sccm N 2 gas flow rate: 100-5000sccm
  • TiN film thickness 1-100nm
  • a TiN film can be formed up to the inner surface in the recess having a large aspect ratio, and film formation with good step coverage can be performed.
  • the supply mode of each gas is merely an example, and any known gas supply mode may be used.
  • the raw material gas, TiCl 4 gas, the nitriding gas, NH 3 gas, and optionally N 2 gas may be supplied simultaneously under the same conditions.
  • a plasma process is performed on the TiN film formed by the first processing apparatus 12 to reduce the stress of the TiN film.
  • FIG. 6 shows an X-ray diffraction profile of the TiN film as it is formed. As shown in FIG. 6, it can be seen that the peak position of TiN (200) is shifted to a higher angle side than the peak position of bulk TiN.
  • the as-deposited TiN film had a lattice constant of 0.421 nm, which was smaller than the lattice constant of bulk TiN, 0.424 nm. That is, when a TiN film is formed by thermal CVD, a large amount of impurities such as Cl escape from the film, which causes distortion in the crystal lattice as shown in FIG. Presumed to occur.
  • FIG. 8 shows an X-ray diffraction profile of the TiN film after the plasma treatment.
  • the peak position of TiN (200) is substantially coincident with the peak position of bulk TiN, and the lattice constant is also shown.
  • the value is 0.423 nm, which is close to 0.424 nm which is the lattice constant of bulk TiN, and as shown in FIG. 9, it is confirmed that the distorted portion of the crystal lattice spreads and the distortion of the film is relaxed.
  • the TiN crystal grown in a columnar shape is distorted and unstable crystals are seen as shown in FIG.
  • the distortion of the crystal is relaxed and the unstable crystal is also stabilized, thereby reducing the stress of the film.
  • impurities such as chlorine existing in the film are reduced by the plasma treatment, and a film with higher quality is obtained.
  • the tip of the TiN crystal is etched by the plasma treatment, and the surface roughness of the TiN film is reduced.
  • the plasma generation gas is supplied into the processing container 70 of the second processing apparatus 14 through the shower head 86 while controlling the flow rate. Is maintained at a predetermined pressure while being evacuated by the evacuation system 74, the wafer W placed on the mounting table 82 is maintained at a predetermined temperature by the resistance heater 84, and the shower head 86 is supplied from the high frequency power source 98. Is applied with high frequency power to generate plasma in the processing space S between the mounting table 82 and the shower head 86.
  • any gas species can be used.
  • N 2 gas, H 2 gas, NH 3 gas, and a rare gas can be suitably used. At least one of them can be used. Since the effect can be obtained with only a rare gas, the stress reduction action is not caused by a chemical reaction, but is considered to be an action of ions in plasma.
  • Ar gas is suitable as the rare gas.
  • the plasma generation gas for example, both or one of NH 3 gas and H 2 gas and Ar gas can be suitably used.
  • Process temperature 250-1000 ° C
  • Process pressure 13 to 1330 Pa
  • High frequency power 100-1500 watts (W)
  • Plasma generating gas Ar, H 2 , NH 3
  • Gas flow rate Ar gas 100-5000sccm H 2 gas 100-5000sccm
  • NH 3 gas 100-5000sccm
  • Process time 1 to 300 sec
  • the process temperature When the process temperature is lower than 250 ° C., the effect of reducing the stress due to plasma cannot be sufficiently achieved.
  • the process temperature When the process temperature is higher than 1000 ° C., the characteristics of the underlying element formed in the previous process on the wafer W deteriorate. End up.
  • the preferred range of process temperature is 300-850 ° C.
  • the process time is less than 1 sec, the effect of the plasma treatment cannot be sufficiently exhibited.
  • the process time is longer than 300 sec, the effect of the plasma treatment is saturated, resulting in a decrease in throughput.
  • FIG. 12 shows the stress in the radial direction of the wafer.
  • the plasma processing conditions at this time were Ar, H 2 , and NH 3 gases as plasma generation gases, high-frequency power power of 800 W, processing time of 120 sec, and temperature that were the same as those during the film forming process.
  • the stress is reduced by performing the plasma treatment after the film formation. Among them, the tensile stress changes to the compressive stress under the high temperature condition A.
  • FIGS. 13 is a diagram showing the relationship between temperature and specific resistance of the film
  • FIG. 14 is a diagram showing the relationship between temperature and film stress
  • FIG. 15 is a diagram showing the relationship between specific resistance of film and stress.
  • the specific resistance is extremely high at 460 ° C. in thermal CVD, but the specific resistance of the film is greatly reduced as the temperature is increased. In SFD, the specific resistance of the film is low even at a low temperature. However, the specific resistance decreases as the temperature rises. As shown in FIG. 14, the stress of the film at this time increases as the temperature increases, and as shown in FIG. 15, the stress of the film increases as the specific resistance decreases.
  • FIG. 17A shows the Cl concentration in the depth direction after performing as-deposited (as depo) and 30 sec plasma treatment
  • FIG. 17B shows the concentration in the depth direction after performing the as-deposited 30 sec plasma treatment. O concentration is shown. As shown in these figures, it was confirmed that the impurity concentration was reduced by performing plasma treatment after film formation.
  • the stress of the TiN film can be reduced by the plasma treatment.
  • the required level of the film stress differs depending on the application, and not only the film stress is reduced but also the film stress is reduced. It is desirable to be able to control.
  • Such stress on the TiN film can be controlled by adjusting the conditions in the plasma processing. Specifically, the stress of the film can be controlled relatively easily by changing the temperature or time of the plasma treatment.
  • the stress of the film after the TiN film is formed by thermal CVD is reduced by plasma processing
  • the stress reduction process by such plasma processing is performed by thermal CVD.
  • This is also effective when forming a film.
  • a raw material gas for example, WF6 gas
  • a reducing gas for example, H2 gas
  • FIG. 18 is a diagram showing various process conditions and measurement results when the method of the present invention is performed. Here, for comparison, the measurement results of the TiN film formed by the conventional film forming method are also shown.
  • the conventional methods 1 to 4 and the inventive methods 1 to 4 were performed as described as run names in FIG.
  • the TiN film is formed by using the SFD method here, and the number of repetitions is described as “cycle”.
  • the characteristics of the TiN film itself formed by the SFD method are measured, and in the case of the method of the present invention, the characteristics are measured after the TiN film is further subjected to the plasma treatment characterized by the present invention.
  • the conventional method and the method of the present invention having the same run name correspond to each other.
  • the process temperature (set temperature) during the plasma treatment is 450 ° C.
  • Method 1 has 10 cycles
  • Method 2 has a short cycle period and 32 cycles.
  • the thickness is set to approximately the same thickness of about 7.5 to 8.2 nm.
  • the difference between the method 3 and the method 4 is that the period of one cycle is the same as each other, the number of cycles is changed to 13 and 6, and the film thicknesses formed corresponding to these are 24.7 to 26.3 nm and 12. The difference is 2 to 12.5 nm.
  • the resistance is 937.5 ⁇ to 278.0 ⁇ although the film thickness is substantially the same as 7.5 nm and 7.4 nm.
  • the specific resistance is also greatly reduced from 703.9 ⁇ cm to 207.0 ⁇ cm.
  • the stress is greatly reduced from 1.4 GPa to ⁇ 0.1 GPa, and it can be seen that the stress is almost zero and the method 1 of the present invention shows good results.
  • the period of one cycle is shortened and the number of cycles is increased as compared with the case of the method 1, and as a result, the film thickness is made substantially the same as the method 1. . In this case, the same result as in the case of the method 1 is obtained.
  • the film thickness is the same as 8.2 nm
  • the resistance is considerably reduced from 456.5 ⁇ to 273.9 ⁇ and the specific resistance is also 372. It is reduced from .9 ⁇ cm to 225.5 ⁇ cm.
  • the stress is also greatly reduced from 1.8 GPa to ⁇ 0.9 GPa, and it can be seen that the method 2 of the present invention shows good results.
  • the film thickness is substantially the same as 24.7 to 26.3 nm
  • the resistance is considerably reduced from 47.1 ⁇ to 35.9 ⁇ .
  • the specific resistance is considerably reduced from 116.2 ⁇ cm to 94.5 ⁇ cm.
  • the stress is greatly reduced from 2.1 GPa to 0.8 GPa, the stress is substantially zero, and Method 3 of the present invention shows good results.
  • the film thickness is substantially the same as 12.2 nm and 12.5 nm
  • the resistance is considerably reduced from 121.4 ⁇ to 83.2 ⁇ .
  • the specific resistance is considerably reduced from 148.0 ⁇ cm to 103.8 ⁇ cm.
  • the stress is greatly reduced from 1.9 GPa to ⁇ 0.1 GPa, and it can be seen that the stress is almost zero and the method 4 of the present invention shows a good result.
  • FIG. 19 is a diagram showing various process conditions and measurement results when the method of the present invention is performed. Here, for comparison, the measurement results of the TiN film formed by the conventional film forming method are also shown. The arrow “ ⁇ ” shown in FIG. 19 indicates the same value as the numerical value on the left side.
  • the conventional methods 5 to 8 and the inventive methods 5 to 8 were performed.
  • all the TiN films are formed using the SFD method, and the number of repetitions is 13 as described as “cycle”.
  • the characteristics of the TiN film itself formed by the SFD method are measured, and in the case of the method of the present invention, the characteristics are measured after the TiN film is further subjected to the plasma treatment characterized by the present invention.
  • the conventional method and the method of the present invention having the same run name correspond to each other.
  • the process temperature (set temperature) during TiN film formation is 680 ° C.
  • the process temperature (set temperature) during the plasma treatment is 640 ° C.
  • the difference between the method 5 and the method 6 and the difference between the method 7 and the method 8 are that, in the methods 5 and 7, the hydrogen-containing gas at the time of plasma treatment is NH 3 gas and H 2 gas, whereas the method 6 and 8 Then, the hydrogen-containing gas is H 2 gas (in FIG. 19, the flow rate of NH 3 in the plasma treatment is zero). Further, the difference between the methods 5 and 6 and the methods 7 and 8 is that the methods 5 and 6 are plasma processed in situ, and the methods 7 and 8 are plasma processed in ex situ.
  • the film thickness is substantially the same as 10.3 nm and 10.4 nm
  • the resistance is considerably reduced from 139.7 ⁇ to 79.3 ⁇
  • the specific resistance is also considerably reduced from 145.0 ⁇ cm to 81.5 ⁇ cm.
  • the stress is greatly reduced from 1.8 GPa to ⁇ 0.4 GPa, and it can be seen that the method 5 of the present invention shows good results.
  • the film thickness is substantially the same as 10.3 nm and 10.4 nm
  • the resistance is considerably reduced from 139.7 ⁇ to 87.0 ⁇ .
  • the specific resistance is considerably reduced from 145.0 ⁇ cm to 92.8 ′′ ⁇ cm.
  • the stress is greatly reduced from 1.8 GPa to ⁇ 0.6 GPa, and the method 6 of the present invention is good. It turns out that the result is shown.
  • the film thickness is substantially the same as 10.4 nm and 10.6 nm
  • the resistance is considerably reduced from 139.7 ⁇ to 93.0 ⁇
  • the specific resistance is also considerably reduced from 145.0 ⁇ cm to 98.6 ⁇ cm.
  • the stress is greatly reduced from 1.8 GPa to ⁇ 0.7 GPa, and it can be seen that the method 7 of the present invention shows good results.
  • the resistance is considerably reduced from 139.7 ⁇ to 80.3 ⁇ and the specific resistance is 145. despite the film thickness being the same as 10.4 nm. It is considerably reduced from 0 ⁇ cm to 83.1 ⁇ cm. Moreover, the stress is greatly reduced from 1.8 GPa to ⁇ 0.4 GPa, and it can be seen that the method 8 of the present invention shows good results.
  • the stress of the TiN film can be reduced even if the gas composition and the processing method are different in the plasma processing.
  • the process temperature during the plasma treatment can be surely exhibited in the temperature range from 450 ° C. of the present invention methods 1 to 4 to 640 ° C. of the present method 5 to 8.
  • FIG. 20 is a diagram showing various process conditions and measurement results when the method of the present invention is performed.
  • the measurement result of the W film formed by the conventional film forming method is also shown. Note that an arrow “ ⁇ ” shown in FIG. 20 indicates the same value as the numerical value on the left side.
  • the conventional methods 9 to 10 and the inventive methods 9 to 10 were performed as described as run names in FIG.
  • the W film is formed using a thermal CVD method in which WF 6 gas is used as a source gas, H 2 gas is used as a reducing gas, Ar gas is used as a dilution gas, and all gases are simultaneously supplied to obtain a predetermined film thickness.
  • the characteristics of the W film itself formed by the thermal CVD method are measured, and in the case of the method of the present invention, the characteristics are measured after the W film is further subjected to the plasma treatment which is the feature of the present invention.
  • the conventional method and the method of the present invention having the same run name correspond to each other.
  • the process temperature (set temperature) during W film formation is 450 ° C.
  • the process temperature (set temperature) during plasma processing is also 450 ° C.
  • the difference between the method 9 and the method 10 is that in the method 9, the hydrogen-containing gas is NH 3 gas and H 2 gas, whereas in the method 10, the hydrogen-containing gas is H 2 gas (in FIG. The NH 3 flow rate of the treatment is zero).
  • the film thickness is the same as 46.3 nm
  • the resistance is slightly increased from 2847.5 ⁇ to 3178.5 ⁇
  • the specific resistance is from 13.2 ⁇ cm to 14 The same tendency toward 7 ⁇ cm.
  • the stress decreases from 1.2 GPa to 0.7 GPa, and it can be seen that the method 9 of the present invention shows good results.
  • the film thickness is substantially the same as 46.4 nm and 46.6 nm, the resistance is both 2675.1 ⁇ , and the specific resistance is also 12.4 ⁇ cm. And approximately the same as 12.5 ⁇ cm.
  • the stress is reduced from 1.1 GPa to 0.8 GPa, and it can be seen that the method 10 of the present invention shows good results.
  • the stress of the film can be reduced by performing the plasma treatment even in the case of the tungsten film formed by thermal CVD.
  • FIG. 21 is a sectional view showing a processing apparatus as another example of an apparatus for carrying out the method of the present invention.
  • the processing apparatus 110 has a basic configuration similar to that of the processing apparatus 12 and is obtained by adding a plasma generation mechanism for generating plasma to the configuration.
  • the same components as the processing apparatus 12 are denoted by the same reference numerals. Description is omitted.
  • the high frequency power source 120 serves as a plasma generation mechanism for generating plasma in the processing space S ′ between the mounting table 44 and the shower head 50. Connected through. Therefore, the shower head 50 to which high frequency power is applied via the ceiling portion of the processing container 40 functions as an upper electrode.
  • a matching circuit 124 is provided in the middle of the feeder line 122.
  • the high-frequency power source 120 for example, a power source having a frequency of 450 kHz can be used.
  • the mounting table 44 is made of a ceramic member such as AlN, and the lower electrode 130 made of, for example, a mesh-like conductive member is embedded in the mounting table 44.
  • An insulating material 131 is airtightly provided between the ceiling of the processing container 40 and the upper end of the side wall of the processing container 40, and the shower head 50 as the upper electrode and the processing container 40 are insulated.
  • the plasma generation gas NH 3 gas can be used, but as other plasma generation gas, H 2 gas or Ar gas may be supplied through the gas supply pipe 51B.
  • the lower electrode 130 is grounded and high frequency power is applied to the shower head 50.
  • the present invention is not limited to this, and conversely, the high frequency power is applied to the lower electrode 130 and the shower head 50 is grounded. You may make it do.
  • a resistance heater 46 is embedded as a heating means in the mounting table 44 so that the mounting table 44 can be controlled to a desired temperature.
  • step 1 and step 2 in the flowchart of FIG. 4 can be performed in the processing container 40.
  • a simple thermal CVD method for forming a TiN film on a heated substrate by simultaneously flowing a source gas (for example, TiCl 4 gas) and a nitriding gas (for example, NH 3 gas), or supplying a source gas and a nitriding gas
  • a source gas for example, TiCl 4 gas
  • a nitriding gas for example, NH 3 gas
  • the step of forming the film by alternately flowing the step of performing and the step of supplying only the nitriding gas, or the concave portion of the wafer W by the SFD method which is the thermal CVD method of performing film formation by alternately flowing the source gas and the nitriding gas.
  • a TiN film is formed.
  • the conditions at this time are the same as the conditions at the time of film formation in the first processing apparatus 12 described above.
  • the gas for film formation is stopped and the inside of the processing container 40 is purged, and then the plasma generation gas is supplied into the processing container 40 through the shower head 50.
  • the inside of the processing vessel 40 is set to a predetermined pressure, and high frequency power is applied from the high frequency power source 120 to the shower head 50.
  • plasma is generated in the processing space S ′ between the mounting table 44 and the shower head 50, and the wafer W is subjected to plasma processing.
  • the set temperature of the mounting table 44 is changed.
  • N 2 gas, H 2 gas, NH 3 gas, and rare gas can be suitably used, and at least one of these is used. be able to. If NH 3 gas or N 2 gas is used as the plasma generation gas, only the gas for film formation is sufficient, and there is no need to add a gas supply system for plasma generation. As in the case of the second film forming apparatus 14, when Ar gas is used with both or one of NH 3 gas and H 2 gas, it is necessary to add an Ar gas and H 2 gas supply system.
  • the conditions for the plasma treatment are basically the same as those for the second processing apparatus 14 described above. Further, the TiN film after the plasma treatment has a reduced stress as in the case of the treatment by the second treatment apparatus 14.
  • the TiN film forming process and the subsequent stress reduction process using plasma are performed in a lump without transferring the wafer W, so that the processing throughput can be increased.
  • the set temperature differs greatly between the film forming process and the plasma process, it takes time to change the temperature, and therefore the processing system 10 is more advantageous.
  • FIG. 22 is a diagram illustrating an example of a timing chart when plasma processing is performed simultaneously with film formation of SFD.
  • TiCl 4 gas as a source gas and NH 3 gas as a nitriding gas are allowed to flow for a predetermined time to form a thin film, and the supply of TiCl 4 is stopped and NH 3 is allowed to flow while high frequency is supplied.
  • Step S12 in which high-frequency power is applied from the power source 120 to generate plasma to simultaneously perform nitriding and plasma processing is alternately repeated with step S13 being a purge step, thereby forming a TiN film having a predetermined thickness.
  • One step S11 and one step S12 are one cycle, and the number of cycles is set according to the target film thickness.
  • the NH 3 gas in step S12 serves both as a nitriding gas and a plasma generating gas.
  • step 13 which is a purge process is not essential.
  • the stress reduction process using plasma is performed on the film in step S12, and this process is repeated. It is possible to reduce the stress of the film and to obtain a film having a lower specific resistance.
  • the stress of the TiN film can be controlled to a desired value by changing the plasma processing time and the number of cycles in step 12.
  • a method of generating plasma cyclically in synchronism with the intermittent gas supply of SFD is also referred to as SFD + cycle plasma hereinafter.
  • the characteristics when the film is formed with such SFD + cycle plasma are compared with the case where the film is formed as it is (as depo) and the film is formed by performing the plasma treatment after the SFD described above (SFD + plasma treatment).
  • the temperature at the time of basic SFD film formation is 480 ° C.
  • the conditions for the subsequent plasma processing are Ar, H 2 , NH 3 gas as plasma generation gas, high frequency power is 800 W, and processing time is The temperature was 480 ° C. for 5 seconds.
  • the SFD + cycle plasma changes the time and the number of cycles in step 12 to 3 seconds ⁇ 10 cycles (condition 1), 3 seconds ⁇ 20 cycles (condition 2), 3 seconds ⁇ 30 cycles (condition 3), 10 seconds. X 30 cycles (condition 4).
  • FIG. 23 shows the specific resistance of the TiN film formed under conditions 1 to 5 of as depo, SFD + plasma treatment, and SFD + cycle plasma
  • FIG. 24 shows the stress.
  • the SFD + cycle plasma which is the present film forming method has a lower resistance and higher stress reduction effect than the SFD + plasma treatment.
  • increasing the number of cycles or the processing time of step 12 further improves the effect of reducing specific resistance and the effect of reducing stress.
  • FIG. 25 is a flowchart showing each step of the capacitor forming method according to the present invention
  • FIG. 26 is a partially enlarged sectional view showing a part of the wafer in each step of the capacitor forming method.
  • the lower structure formed on the semiconductor wafer W before forming the capacitor is omitted.
  • a contact 142 made of Ti or the like is formed in advance inside the semiconductor wafer W so as to correspond to a position where a capacitor is to be formed.
  • a plurality (a large number) of contacts 142 are arranged in a matrix in two directions, for example, vertically and horizontally.
  • An insulating layer 150 made of, for example, SiO 2 is formed on the surface of the wafer W.
  • a support bar insulating film 152 serving as a support bar is laminated so as to be embedded as described later.
  • the support bar insulating film 152 is patterned in advance, for example, in a lattice pattern so as to intersect on the contact 142.
  • the support bar insulating film 152 is made of a material different from that of the insulating layer 150, such as SiN.
  • the semiconductor wafer W is etched as shown in FIG. 26B to remove portions of the insulating layer 150 and the support bar insulating film 152 corresponding to the contacts 142 to form recesses. 154 is formed (step 11). As a result, the contact 142 is exposed at the bottom of the recess 154. As described above, the recesses 154 are provided so as to correspond to the respective contacts 142, so that a plurality of the recesses 154 are provided on the surface of the wafer W.
  • the height of the recess 154 is about 2 to 3 ⁇ m, and its aspect ratio is about 20 to 30, which is a very elongated recess.
  • a first thin film 156 made of a TiN film is formed with a predetermined thickness on the entire surface of the insulating layer including the surface in the recess 154 (step 12). ).
  • a high-quality TiN film having a low specific resistance and a low resistivity is formed by using the film forming method described above.
  • the first thin film 156 made of a TiN film and the contact 142 are electrically connected.
  • step 14 only the insulating layer 150 is removed by performing an etching process using, for example, hydrofluoric acid (step 14).
  • the remaining first thin film 156 remains as a cylindrical projection to form a lower electrode 158 around the support bar insulation.
  • the film 152 remains as a support bar 160 in a joined state.
  • a plan view of FIG. 26E is shown in FIG. 27. Support bars 160 extend around the lower electrode 158 in four directions, and the lower electrodes 158 adjacent in the vertical and horizontal directions are connected to each other by the support bars 160. To support each other.
  • a high dielectric constant film 162 is formed with a predetermined thickness on the entire surface of the wafer W including the inner and outer surfaces of the lower electrode 158 which is a cylindrical projection.
  • a material having a relative dielectric constant of, for example, 10 or more is used.
  • this material for example, HfO 2 , HfZrO, ZrO 2 or the like can be used.
  • the second thin film 164 made of a TiN film is formed with a predetermined thickness on the entire surface of the wafer W including the inner and outer surfaces of the high dielectric constant film 162. (Step 16).
  • a high-quality TiN film having a low specific resistance and a low resistivity is formed by using the film forming method described above.
  • the second thin film 164 and the high dielectric constant film 162 other than the portion corresponding to the lower electrode 158 which is a cylindrical protrusion are removed, as shown in FIG.
  • the remaining portion of the second thin film 164 becomes the upper electrode 166, and a large number of capacitors 168 including the lower electrode 158, the high dielectric constant film 162, and the upper electrode 166 are formed in a state of being separated from each other. (Step 17).
  • FIG. 28 is a sectional view showing such an element structure.
  • the support bar is omitted.
  • a gate electrode 184 is formed through a gate insulating film 182 in a region partitioned by a field oxide film 180 on a semiconductor substrate 170 made of, for example, a silicon substrate.
  • Impurity regions (source / drain regions) 186 are formed on the main surface of the semiconductor substrate 170 on both sides of the gate electrode 184 by ion implantation using the gate electrode 184 as a mask.
  • an interlayer insulating film 188 is formed over the entire main surface of the semiconductor wafer W, and a contact plug 190 for connecting to one of the source / drain regions 156 is formed at a predetermined position of the interlayer insulating film 188. ing.
  • a bit line 192 is connected to the contact plug 190.
  • An interlayer insulating film 194 is formed on the interlayer insulating film 188 including the bit line 192, and a contact plug 142 for connecting to the other of the source / drain regions 156 is formed through the interlayer insulating films 188 and 184. Yes. Then, the above-described cylindrical or cylindrical capacitor 168 is formed on the contact plug 142.
  • the lower electrode 158 and the upper electrode 166 are both formed of a TiN film with reduced stress, and as a result, warpage of the wafer W itself can be prevented.
  • the capacitor 168 itself can be prevented from cracking or cracking. Note that the support bar is not essential in the capacitor.
  • the TiN film is described as an example of being used for an electrode having a capacitor structure.
  • the present invention is not limited to this, and can be applied to wirings such as the contacts 142 and 190 and the bit line 192 in FIG. It can also be applied to further upper layer contacts, global wiring, etc. that are not performed.
  • the capacitive coupling type using high frequency power generated from the high frequency power source 98 is shown as the plasma generating means, but the present invention is not limited to this, and it is generated by using a microwave generation source.
  • a method of introducing a microwave into a processing vessel through a microwave antenna to form plasma, or an inductive coupling type may be used.
  • this semiconductor wafer includes a compound semiconductor substrate such as GaAs, SiC, or GaN in addition to a silicon substrate.
  • the present invention is not limited to a semiconductor wafer, and the present invention can be applied to a glass substrate, a ceramic substrate, or the like used for a liquid crystal display device.

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Abstract

Cette invention concerne un procédé de formation de couche qui comprend : une étape lors de laquelle une matière de départ gazeuse contenant du titane et un gaz contenant de l'azote sont fournis sur un substrat à traiter dans une chambre de traitement, et une couche de nitrure de titane est formée sur le substrat à traiter par traitement thermique ; et une étape lors de laquelle la couche de nitrure de titane est soumise à un traitement par plasma permettant de réduire l'effort de la couche.
PCT/JP2010/069125 2009-11-04 2010-10-28 Procédé de formation de couche et procédé de formation de condensateur WO2011055671A1 (fr)

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
JP2014062295A (ja) * 2012-09-20 2014-04-10 Hitachi Kokusai Electric Inc 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
CN113380758A (zh) * 2020-02-25 2021-09-10 铠侠股份有限公司 半导体装置及其制造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6629116B2 (ja) * 2016-03-25 2020-01-15 芝浦メカトロニクス株式会社 プラズマ処理装置

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JPH11177052A (ja) * 1997-12-11 1999-07-02 Fujitsu Ltd 半導体装置とその製造方法
JP2001507514A (ja) * 1995-06-05 2001-06-05 マテリアルズ リサーチ コーポレーション 窒化チタンのプラズマエンハンスアニール処理
JP2002299283A (ja) * 2001-03-30 2002-10-11 Toshiba Corp 半導体装置の製造方法
JP2004263207A (ja) * 2003-02-20 2004-09-24 Tokyo Electron Ltd 成膜方法
JP2011006783A (ja) * 2009-05-25 2011-01-13 Hitachi Kokusai Electric Inc 半導体デバイスの製造方法及び基板処理装置

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Publication number Priority date Publication date Assignee Title
JP2001507514A (ja) * 1995-06-05 2001-06-05 マテリアルズ リサーチ コーポレーション 窒化チタンのプラズマエンハンスアニール処理
JPH11177052A (ja) * 1997-12-11 1999-07-02 Fujitsu Ltd 半導体装置とその製造方法
JP2002299283A (ja) * 2001-03-30 2002-10-11 Toshiba Corp 半導体装置の製造方法
JP2004263207A (ja) * 2003-02-20 2004-09-24 Tokyo Electron Ltd 成膜方法
JP2011006783A (ja) * 2009-05-25 2011-01-13 Hitachi Kokusai Electric Inc 半導体デバイスの製造方法及び基板処理装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014062295A (ja) * 2012-09-20 2014-04-10 Hitachi Kokusai Electric Inc 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
CN113380758A (zh) * 2020-02-25 2021-09-10 铠侠股份有限公司 半导体装置及其制造方法
CN113380758B (zh) * 2020-02-25 2023-12-29 铠侠股份有限公司 半导体装置及其制造方法

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