WO2011046775A1 - Production de films conducteurs transparents à partir de graphène - Google Patents

Production de films conducteurs transparents à partir de graphène Download PDF

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Publication number
WO2011046775A1
WO2011046775A1 PCT/US2010/051488 US2010051488W WO2011046775A1 WO 2011046775 A1 WO2011046775 A1 WO 2011046775A1 US 2010051488 W US2010051488 W US 2010051488W WO 2011046775 A1 WO2011046775 A1 WO 2011046775A1
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WO
WIPO (PCT)
Prior art keywords
graphene
recited
polymer
stack
films
Prior art date
Application number
PCT/US2010/051488
Other languages
English (en)
Inventor
Rodney S. Ruoff
Li Xuesong
Original Assignee
Board Of Regents, The University Of Texas System
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Board Of Regents, The University Of Texas System filed Critical Board Of Regents, The University Of Texas System
Publication of WO2011046775A1 publication Critical patent/WO2011046775A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes

Definitions

  • a polymer film such as polymethyl-methacrylate (PMMA) or polyethylene terephthalate, is coated on both sides 203 A, 203B of graphene/copper stack 201/202 as illustrated in Figure 2B.
  • the thickness of the polymer film ranges from tens of nanometers to a few micrometers. While the illustrations of Figures 2A-2H depict PMMA as the polymer film, any type of polymer may be used if it can be coated on the graphene/copper stack to form a film, it is inert to the etchant, it can be re-dissolved and re-cured, and it can be dissolved away in the last step.
  • step 104 the graphene/polymer stacks 201/203 A; 201/203B are washed with distilled water.
  • step 105 the washed graphene/polymer stacks 201/203A; 201/203B are placed on a target substrate 204 (e.g., glass) and dried as illustrated in Figure 2D. It is noted that polymer film 203B is not depicted in Figure 2D for ease of illustration.
  • step 106 an appropriate amount of the polymer film (e.g., PMMA) 206 is dropped on the cured polymer layer 203 A (e.g., PMMA) to cover the whole illustrated in Figure 2E, thereby partially or fully dissolving the coated polymer film 203 A as illustrated in Figure 2F.
  • This step may be referred to herein as the re-dissolving step.
  • step 109 graphene films 201 are transferred onto a flexible substrate 207 on top of another thereby forming multi-layer graphene films 208 as illustrated in Figure 2H. Since graphene is highly transparent and has excellent electrical conductivity, the graphene films 201 that are transferred can be used as transparent conducting films. That is, graphene films 201 transferred onto flexible substrate 207 can be used as a flexible transparent conducting film. By stacking layers of graphene films 201 on top of one another on flexible substrate 207 to form multi-layers of graphene 208, the sheet resistance of the graphene transparent conducting film can be decreased since the conductance of multi-layer stacked graphene films 208 may not simply be a superposition of the conductance of each layer. The cracks that are present in one film may be bridged by its neighboring films thereby increasing the conductivity.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

L'invention porte sur un procédé pour former des films conducteurs transparents à partir de graphène. Le graphène est mis à croître sur une feuille de cuivre mince afin de former un empilement graphène/cuivre. Les deux faces de l'empilement graphène/cuivre sont revêtues d'un film polymère. Le cuivre est ensuite attaqué par une solution aqueuse de nitrate de fer, et les films de graphène restent attachés aux films polymères. Après le lavage des empilements graphène/polymère avec de l'eau distillée et leur disposition sur un substrat cible et leur séchage, une solution de polymère liquide est déposée sur la couche de polymère durcie, de façon à dissoudre ainsi, au moins partiellement, le revêtement polymère. Après la solidification de la solution de polymère liquide, celle-ci est dissoute par de l'acétone, de façon à laisser ainsi le film de graphène sur le substrat cible. Le film de graphène peut ensuite être transféré par-dessus d'autres films de graphène sur un substrat souple, de façon à former ainsi un film conducteur transparent avec de multiples couches de films de graphène qui présentent une conductivité et une transparence élevées.
PCT/US2010/051488 2009-10-13 2010-10-05 Production de films conducteurs transparents à partir de graphène WO2011046775A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US25101809P 2009-10-13 2009-10-13
US61/251,018 2009-10-13

Publications (1)

Publication Number Publication Date
WO2011046775A1 true WO2011046775A1 (fr) 2011-04-21

Family

ID=43876445

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/051488 WO2011046775A1 (fr) 2009-10-13 2010-10-05 Production de films conducteurs transparents à partir de graphène

Country Status (1)

Country Link
WO (1) WO2011046775A1 (fr)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102938373A (zh) * 2012-10-22 2013-02-20 西安电子科技大学 石墨烯透明导电薄膜的叠层转移工艺及制造的器件
EP2583941A1 (fr) 2011-10-20 2013-04-24 Vilniaus universitetas Procédé de production de la couche de graphene mince, transparente et électriquement conductrice
CN104030274A (zh) * 2014-05-28 2014-09-10 中国科学院上海微系统与信息技术研究所 一种提高石墨烯表面洁净度的湿法腐蚀化学转移法
TWI503440B (zh) * 2011-05-27 2015-10-11 Hon Hai Prec Ind Co Ltd 石墨烯導電膜結構的製備方法
WO2016106039A1 (fr) 2014-12-22 2016-06-30 Corning Incorporated Transfert de graphène monocouche sur des substrats en verre souple
WO2017014343A1 (fr) * 2015-07-20 2017-01-26 한국기계연구원 Structure d'interface méta ayant une élasticité améliorée et son procédé de fabrication
EP3385995A1 (fr) 2017-04-07 2018-10-10 New Asia Group Holdings Limited Film mince transparent souple
WO2019011224A1 (fr) * 2017-07-10 2019-01-17 The Hong Kong University Of Science And Technology Procédé de transfert de graphène
CN110386831A (zh) * 2018-04-18 2019-10-29 中南大学 一种带硬化耐磨层的石墨模具及其制备方法和应用
EP3453034A4 (fr) * 2016-05-06 2019-11-20 The Government of the United States of America as represented by the Secretary of the Navy Matériaux hybrides de graphène conducteurs stables transparents aux ir et procédés de fabrication
US10572089B2 (en) 2017-07-12 2020-02-25 Mind Technology Development Limited Sensing film with an integrated structure
US10737476B2 (en) 2015-09-01 2020-08-11 Corning Incorporated Methods for transferring graphene films and substrates comprising graphene films
US11003290B2 (en) 2017-10-11 2021-05-11 New Asia Group Holdings Limited Sensing film with an integrated structure

Citations (5)

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US5108562A (en) * 1991-02-06 1992-04-28 International Business Machines Electrolytic method for forming vias and through holes in copper-invar-copper core structures
US6214460B1 (en) * 1995-07-10 2001-04-10 3M Innovative Properties Company Adhesive compositions and methods of use
US20050220983A1 (en) * 2002-05-13 2005-10-06 Jonathan Hayes Method of processing a stack of coatings and apparatus for processing a stack of coatings
US20070003471A1 (en) * 2003-03-31 2007-01-04 Fujitsu Limited Method of manufacturing carbon nanotubes
US20090017211A1 (en) * 2006-06-13 2009-01-15 Unidym, Inc. Graphene film as transparent and electrically conducting material

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5108562A (en) * 1991-02-06 1992-04-28 International Business Machines Electrolytic method for forming vias and through holes in copper-invar-copper core structures
US6214460B1 (en) * 1995-07-10 2001-04-10 3M Innovative Properties Company Adhesive compositions and methods of use
US20050220983A1 (en) * 2002-05-13 2005-10-06 Jonathan Hayes Method of processing a stack of coatings and apparatus for processing a stack of coatings
US20070003471A1 (en) * 2003-03-31 2007-01-04 Fujitsu Limited Method of manufacturing carbon nanotubes
US20090017211A1 (en) * 2006-06-13 2009-01-15 Unidym, Inc. Graphene film as transparent and electrically conducting material

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI503440B (zh) * 2011-05-27 2015-10-11 Hon Hai Prec Ind Co Ltd 石墨烯導電膜結構的製備方法
EP2583941A1 (fr) 2011-10-20 2013-04-24 Vilniaus universitetas Procédé de production de la couche de graphene mince, transparente et électriquement conductrice
LT5943B (lt) 2011-10-20 2013-06-25 Vilniaus Universitetas Plono elektrai laidaus permatomo grafeno sluoksnio gamybos būdas
CN102938373A (zh) * 2012-10-22 2013-02-20 西安电子科技大学 石墨烯透明导电薄膜的叠层转移工艺及制造的器件
CN104030274A (zh) * 2014-05-28 2014-09-10 中国科学院上海微系统与信息技术研究所 一种提高石墨烯表面洁净度的湿法腐蚀化学转移法
CN104030274B (zh) * 2014-05-28 2016-01-20 中国科学院上海微系统与信息技术研究所 一种提高石墨烯表面洁净度的湿法腐蚀化学转移法
US9828285B2 (en) 2014-12-22 2017-11-28 Corning Incorporated Transfer of monolayer graphene onto flexible glass substrates
WO2016106039A1 (fr) 2014-12-22 2016-06-30 Corning Incorporated Transfert de graphène monocouche sur des substrats en verre souple
CN107428600A (zh) * 2014-12-22 2017-12-01 康宁公司 将单层石墨烯转移至柔性玻璃基板上
WO2017014343A1 (fr) * 2015-07-20 2017-01-26 한국기계연구원 Structure d'interface méta ayant une élasticité améliorée et son procédé de fabrication
US10737476B2 (en) 2015-09-01 2020-08-11 Corning Incorporated Methods for transferring graphene films and substrates comprising graphene films
EP3453034A4 (fr) * 2016-05-06 2019-11-20 The Government of the United States of America as represented by the Secretary of the Navy Matériaux hybrides de graphène conducteurs stables transparents aux ir et procédés de fabrication
EP3385995A1 (fr) 2017-04-07 2018-10-10 New Asia Group Holdings Limited Film mince transparent souple
US10329660B2 (en) 2017-04-07 2019-06-25 Mind Technology Development Limited Flexible transparent thin film
WO2019011224A1 (fr) * 2017-07-10 2019-01-17 The Hong Kong University Of Science And Technology Procédé de transfert de graphène
US10572089B2 (en) 2017-07-12 2020-02-25 Mind Technology Development Limited Sensing film with an integrated structure
US11003290B2 (en) 2017-10-11 2021-05-11 New Asia Group Holdings Limited Sensing film with an integrated structure
CN110386831A (zh) * 2018-04-18 2019-10-29 中南大学 一种带硬化耐磨层的石墨模具及其制备方法和应用
CN110386831B (zh) * 2018-04-18 2021-09-10 中南大学 一种带硬化耐磨层的石墨模具及其制备方法和应用

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