WO2017014343A1 - Structure d'interface méta ayant une élasticité améliorée et son procédé de fabrication - Google Patents

Structure d'interface méta ayant une élasticité améliorée et son procédé de fabrication Download PDF

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WO2017014343A1
WO2017014343A1 PCT/KR2015/007762 KR2015007762W WO2017014343A1 WO 2017014343 A1 WO2017014343 A1 WO 2017014343A1 KR 2015007762 W KR2015007762 W KR 2015007762W WO 2017014343 A1 WO2017014343 A1 WO 2017014343A1
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meta
foil
layer
interface
support film
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PCT/KR2015/007762
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English (en)
Korean (ko)
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원세정
김재현
이학주
장봉균
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한국기계연구원
재단법인 파동에너지 극한제어 연구단
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Publication of WO2017014343A1 publication Critical patent/WO2017014343A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports

Definitions

  • the present invention relates to a meta-interface structure with improved elasticity and a method of manufacturing the same.
  • ITO indium tin oxide
  • the first is the technology of manufacturing devices and electrodes using flexible materials.
  • Flexible materials include conductive polymers, organic semiconductors, and polymer insulators.
  • ITO Indium Tin Oxide
  • oxide semiconductors such as Indium Zinc Gallium Oxide
  • insulators such as silicon oxide / nitride.
  • the second method is to add an energy absorbing layer between the device and the substrate, such as adding a polymer layer or a metal thin film.
  • This technique increases the overall thickness of the machinery and lowers its permeability, making it unsuitable for machinery requiring high permeability and miniaturization.
  • Korean Patent Laid-Open Publication No. 2014-0027811 discloses a semiconductor device having flexibility and a method of manufacturing the same. It is. That is, a semiconductor device manufactured by using the first or third method has a disadvantage in that the electrical and electronic performance and yield are inferior.
  • the present invention is a meta-interface formed by stacking two or more layers of two-dimensional material of the monoatomic layer between the substrate and the device (electrode) formed in a laminated structure As it slides, it is intended to provide a meta-interface structure and a method for manufacturing the same, which can improve the elasticity of the entire structure by transferring a deformation amount smaller than the deformation amount applied to the substrate to the device (electrode).
  • the meta-interface structure according to an embodiment of the present invention, the meta-interface is provided between the substrate, the device layer provided on the substrate, and the substrate and the device layer, the two-dimensional material of the monoatomic layer is formed by laminating two or more layers Layer.
  • the device layer and the meta-interface layer may be formed in a plurality of layers on the substrate.
  • the meta interface layer includes at least one of graphene, graphene oxide, reduced graphene oxide (RGO), and hexagonal boron nitride (h-BN). can do.
  • the meta-interface layer is characterized in that the thickness of 10 nm or less or the number of layers of the laminated monoatomic layer two-dimensional material is less than 20 layers.
  • the method of manufacturing a meta-interface structure the first foil coating step of coating the support film on the first foil synthesized with the first two-dimensional material, removing the first foil through an etching process
  • a first foil removing step a first transfer step of transferring the first two-dimensional material coated with the support film onto a second foil on which the second two-dimensional material is synthesized, and a second foil to remove the second foil through an etching process.
  • the device layer stacking step of stacking the device layer on the interface layer.
  • a method for manufacturing a meta-interface structure includes attaching a support film onto a first foil having a first two-dimensional material synthesized, and attaching another support film to a second foil having a second two-dimensional material synthesized.
  • Foil attachment step of attaching on the foil Foil removal step of removing the first and second foil through the etching process, First attachment step of attaching the first two-dimensional material coated with the support film on the substrate, The support film Removing the first support film to remove the second support film coated with the second two-dimensional material on the first two-dimensional material, and removing the second support film to remove the second support film.
  • a device layer stacking step of stacking a device layer on the meta-interface layers which are the first and second two-dimensional materials.
  • the first foil removing step, the second foil removing step, or the foil removing step may remove residues or etching solutions of the first and second foils remaining in the first and second two-dimensional materials coated with the support film. It may further comprise a step.
  • the support film may be at least one of polymethylmethacrylate (PMMA), a thermal release tape, a UV-release tape, or a film having a silicone adhesion to a polymer film. It features.
  • PMMA polymethylmethacrylate
  • thermal release tape a thermal release tape
  • UV-release tape a film having a silicone adhesion to a polymer film. It features.
  • first and second two-dimensional materials are graphene (Graphene), graphene oxide (Graphene Oxide), reduced graphene oxide (Reduced Graphene Oxide, RGO), hexagonal boron nitride (Hexagonal Boron Nitride, h-BN) It may include at least one.
  • first foil or the second foil may be at least one of copper, a copper alloy, and a nickel material.
  • first foil removing step, the second foil removing step, or the foil removing step may remove the first foil or the second foil using an ammonium persulfate (APS) solution.
  • APS ammonium persulfate
  • the substrate is characterized in that the polymer material.
  • the step of stacking the device layer on the meta-interface layer of the multi-layered two-dimensional material is an initial vacuum step of lowering the pressure in the chamber after mounting the substrate on which the material of the device layer and the meta-interface layer is stacked, After injecting an inert gas into the additive, a stabilizing step of heating the substrate to maintain a predetermined temperature, and generating a plasma between the material of the device layer and the substrate to deposit the device layer on the meta-interface layer. It may comprise a device layer deposition step.
  • the step of depositing a device layer on the meta-interface layer of the multi-layered two-dimensional material the sacrificial layer deposition step of depositing a sacrificial layer on the wafer, the device layer deposition step of depositing a device layer on the sacrificial layer, roll Using a transfer device, a carrier film attaching step of attaching a carrier film on the device layer, a sacrificial layer removing step of removing the sacrificial layer and the wafer through an etching process, the device layer attached to the carrier film A device layer attaching step of attaching on the meta-interface layer made of a two-dimensional material, and a carrier film removing step of removing and removing the carrier film.
  • the meta-interface structure according to the embodiment of the present invention is applied to the substrate as the meta-interface formed by stacking two or more layers of monoatomic layer two-dimensional materials between the substrate and the element (electrode) formed in the laminated structure is slid.
  • the deformation amount smaller than the deformation amount can be transferred to the device (electrode).
  • the meta-interface structure with improved elasticity has an effect of preventing cracking and electrical / optical performance degradation due to deformation of the entire structure.
  • FIG. 1 is a conceptual diagram illustrating a meta-interface structure according to an embodiment of the present invention.
  • FIG. 2A is a diagram schematically illustrating a meta-interface structure according to an embodiment of the present invention.
  • 2B is a view schematically showing a meta interface structure according to another embodiment of the present invention.
  • FIG 3 is a graph showing a change in total resistance according to the tension of the meta-interface structure according to the embodiments of the present invention.
  • Figure 4 is a graph showing the crack density according to the tension of the meta-interface structure in accordance with embodiments of the present invention.
  • FIG. 5 is a graph showing the resistance change of the device layer according to the tension of the meta-interface structure according to the embodiments of the present invention.
  • FIG. 6 is a flowchart illustrating a method of manufacturing a meta-interface structure according to an embodiment of the present invention.
  • FIG. 7 is a process chart showing the manufacturing process of the meta-interface structure according to an embodiment of the present invention.
  • FIG. 8 is a flowchart illustrating a method of manufacturing a meta-interface structure according to another embodiment of the present invention.
  • FIG. 9 is a process chart showing a method of manufacturing a meta-interface structure according to another embodiment of the present invention.
  • FIG. 10 is a flowchart of depositing an element layer of a meta-interface structure on a meta-interface layer using a magnetron sputtering apparatus according to an embodiment of the present invention.
  • FIG. 11 is a conceptual diagram of depositing a device layer of a meta-interface structure on a meta-interface layer using a magnetron sputtering apparatus according to an embodiment of the present invention.
  • FIG. 12 is a flowchart in which the device layer of the meta-interface structure according to the embodiment of the present invention is attached onto the meta-interface layer using a roll transfer device.
  • FIG. 13 is a process diagram for attaching an element layer of a meta interface structure according to an embodiment of the present invention onto a meta interface layer using a roll transfer apparatus.
  • FIG. 1 is a conceptual diagram illustrating a meta-interface structure according to an embodiment of the present invention.
  • the meta interface structure according to the present embodiment includes a substrate 100, an element layer 200, and a meta interface layer 300.
  • the device layer 200 is formed on the substrate 100.
  • a meta interface layer 300 is formed between the substrate 100 and the device layer 200.
  • the meta interface layer 300 is formed by stacking a plurality of two-dimensional materials.
  • Two-dimensional material is a crystalline material consisting of a single layer of valence.
  • the meta-interface layer 300 is formed by stacking a plurality of two-dimensional materials formed of a single layer of atoms.
  • the meta-interface layer 300 may reduce the stress transmitted to the device layer 200 while sliding the two-dimensional material formed of a plurality of layers.
  • the device layer 200 may use not only devices but also transparent electrodes or films.
  • the meta interface layer 300 is at least one of graphene (Graphene), graphene oxide (Graphene Oxide), reduced graphene oxide (Reduced Graphene Oxide, RGO), hexagonal boron nitride (h-BN) You can use one.
  • the meta interface layer 300 may be used as long as it is a two-dimensional material in addition to the above materials.
  • the meta-interface layer 300 may have a thickness of 10 nm or less, or the number of laminated two-dimensional materials within 20 layers.
  • the laminated monoatomic layer interacts by van der Waals forces, but when the number of laminated two-dimensional materials is greater than 20 layers, the thickness becomes larger than the range of van der Waals forces, so the interface It is difficult to consider and is considered a separate structure.
  • the elasticity of a mechanism refers to the maximum strain at which the mechanism can operate and is mainly determined by the breaking strain of brittle elements.
  • a force is transmitted to the device layer 200 to deform.
  • the meta interface layer 300 is applied between the device layer 200 and the substrate 100, when the substrate 100 is deformed, sliding occurs in the meta interface layer 300 to be transferred to the device layer 200. Force is reduced.
  • the mechanical device has less strain on the element layer 200 when there is a meta interface layer 300 than when there is no meta interface layer 300.
  • the meta interface layer 300 when the meta interface layer 300 is present, a larger strain must be applied to the mechanical device than without the meta interface layer 300 in order for the strain to be applied by the breaking strain of the device layer 200.
  • the result is greater flexibility than conventional machinery.
  • FIG. 2A is a view schematically showing a meta interface structure according to an embodiment of the present invention
  • FIG. 2B is a view schematically showing a meta interface structure according to another embodiment of the present invention.
  • the substrate 100 and the device layer 200 are formed in a single layer structure, and the meta-interface layer 300 is formed between the substrate 100 and the device layer 200.
  • the device layer 200 is formed in a multi-layer structure on the substrate 100, between the substrate 100 and the device layer 200, and the device layer 200 having a multi-layer structure.
  • the meta interface layer 300 is formed between each.
  • the device layer 200 is stretched as the substrate 100 is stretched.
  • the meta interface layer 300 between the substrate 100 and the device layer 200 is slid to reduce the stress transmitted to the device layer 200.
  • the device layer 200 is deformed lower than the strain of the substrate 100.
  • the device layers 200 have a low strain rate toward the height direction.
  • the electrical resistance was measured while performing a tensile test on the meta-interface structure according to the embodiments of the present invention and is shown in the graphs of FIGS. 3, 4 and 5.
  • FIG 3 is a graph showing the change in the overall resistance of the structure according to the strain of the meta-interface structure in accordance with embodiments of the present invention.
  • 4 is a graph showing the crack density according to the strain of the meta-interface structure according to the embodiments of the present invention
  • Figure 5 is a device layer (ITO thin film) according to the strain of the meta-interface structure according to the embodiments of the present invention This graph shows the resistance change.
  • ITO defines a structure consisting of the substrate 100 and the device layer 200 only, and "ITO / 2LG” refers to the substrate 100 and the device layer.
  • a structure including a meta interface layer 300 having two two-dimensional materials stacked between 200 is defined.
  • ITO / 3LG defines a structure including a meta-interface layer 300 having three two-dimensional materials stacked between the substrate 100 and the device layer 200.
  • ITO / 4LG defines a structure including a meta-interface layer 300 in which four two-dimensional materials are stacked between the substrate 100 and the device layer 200.
  • ITO / 5LG defines a structure including a meta-interface layer 300 in which five two-dimensional materials are stacked between the substrate 100 and the device layer 200.
  • the crack density is relatively lower than that of the device layer 200 only.
  • the crack density is lower as the number of layers of the two-dimensional material used as the meta-interface layer 300 increases.
  • the reason why the crack density is reduced in the structure to which the meta interface layer 300 is applied is that the stress applied to the device layer 200 is relatively reduced compared to the substrate 100 due to the sliding occurring in the meta interface layer 300. to be.
  • such sliding is characterized by increasing as the number of layers of the two-dimensional material increases.
  • FIG. 5 shows the resistance change and the electro-mechanical model of the device layer 200 according to the strain.
  • the meta-interface layer 300 When the meta-interface layer 300 is present, it can be seen that the resistance change of the device layer 200 according to the strain is low, and the rate of decrease becomes larger as the number of layers of the two-dimensional material increases. Therefore, assuming that the strain at the time of having a specific resistance change value is elasticity, elasticity can be improved by applying a meta interface.
  • the meta-interface structure according to the embodiment of the present invention has a thickness of the meta-interface layer 300 is only a few tens of nanometers and excellent optical transmittance, the thickness of the entire structure and the meta-interface layer 300 depending on the presence or absence of the There is little difference in the optical properties.
  • the crack density and the electrical resistance of the structure to which the meta-interface is applied are significantly reduced compared to those of the structure that is not. This is because the shear stress transmitted from the substrate 100 to the device layer 200 is significantly lowered due to the low shear modulus of the meta interface.
  • electro-mechanical elasticity is further improved. This allows the electro-mechanical elasticity of the entire structure to be adjusted as desired, which can be useful in designing flexible electronics.
  • the manufacturing method of the meta-interface structure for manufacturing the meta-interface structure according to the embodiment of the present invention is divided into a method of manufacturing the meta-interface structure through a wet process and a method of manufacturing the meta-interface structure through a dry process.
  • FIG. 6 is a flowchart illustrating a method of manufacturing a meta interface structure according to an embodiment of the present invention
  • FIG. 7 is a flowchart schematically illustrating a manufacturing process of the meta interface structure according to an embodiment of the present invention.
  • the method for manufacturing the meta-interface structure through a wet process may include a first foil coating step S100, a first foil removing step S200, a first transfer step S300, and a first manufacturing method.
  • the support film is coated on the first foil synthesized with the first two-dimensional material.
  • the support film uses polymethyl methacrylate (polymethylmethacrylate, PMMA).
  • the first two-dimensional material is at least one of graphene (Graphene), graphene oxide (Graphene Oxide), reduced graphene oxide (Reduced Graphene Oxide, RGO), Hexagonal Boron Nitride (h-BN) Can be used.
  • the first foil may be made of one of copper, copper alloy, and nickel.
  • the first foil is removed through an etching process.
  • the supporting film is coated with the first two-dimensional material and the first foil in a container, and an etching process is performed using an ammonium persulfate (APS) solution.
  • APS ammonium persulfate
  • an appropriate metal etching solution may be used instead of the APS solution according to the material of the foil, and various solutions, such as sulfuric acid and nitric acid, which do not etch graphene while etching the metal, may be used in addition to the APS solution.
  • Korean Patent Application No. 10-2014-0157313 (“Etching Solution and Graphene Transfer Method Using the Same", filed by Nov. 12, 2014, filed by the present inventors with respect to the foil removing step using the ammonium persulfate solution) See content.
  • the first two-dimensional material coated with the support film is floated in distilled water to remove the APS solution, which is the residue or etching solution of the foil remaining in the first two-dimensional material.
  • the first two-dimensional material coated with the support film is floated with a second foil synthesized with a second two-dimensional material, the second Transfer the first two-dimensional material onto two foils.
  • the second foil may be made of one of copper, copper alloy, and nickel.
  • the first two-dimensional material coated with the support film is covered on the second foil on which the second two-dimensional material is synthesized.
  • the second foil removing step S400 the second foil is removed through an etching process in the same manner as in the first foil removing step S200.
  • the second foil is removed through an etching process using an APS solution.
  • the first and second two-dimensional materials coated with the support film are floated in distilled water to remove the APS solution, which is a residue or an etching solution of the foil remaining in the first and second two-dimensional materials.
  • the APS solution which is a residue or an etching solution of the foil remaining in the first and second two-dimensional materials.
  • the first and second two-dimensional materials coated with the support film are floated onto a substrate, and the first and second two-dimensional materials are removed. Is transferred onto the substrate.
  • the substrate is a polymer material.
  • the device layer is laminated on the meta-interface layer 300 which is the multi-dimensional two-dimensional material.
  • the device layer is laminated using an off-axis RF magnetron sputtering method or a roll transfer device. A detailed description of the device layer stacking step S700 will be described later with reference to FIGS. 10 to 13.
  • the dry transfer method is a method of transferring graphene to a substrate by mechanical force such as adhesive force, which enables large area and mass production using roll transfer or the like.
  • FIG. 8 is a flowchart illustrating a method of manufacturing a meta interface structure according to another embodiment of the present invention
  • FIG. 9 is a flowchart illustrating a method of manufacturing a meta interface structure according to another embodiment of the present invention.
  • the method of manufacturing the meta-interface structure through a dry process includes a foil attaching step (S110), a foil removing step (S210), a first attaching step (S310), and a first supporting film removal.
  • Step S410, the second attaching step S510, the second supporting film removing step S610, and the device layer stacking step S700 are performed.
  • the supporting film is attached onto the first foil on which the first two-dimensional material is synthesized, and another supporting film is attached to the second two-dimensional material. Attach on the synthesized second foil.
  • the support film is placed on the roll equipment on the first foil on which the first two-dimensional material is synthesized, and then passed through the roll to attach the support film on the first foil on which the first two-dimensional material is synthesized.
  • the supporting film serves to support the first and second two-dimensional materials so as not to be damaged, and the silicone adhesive layer is provided on the thermal release tape, the UV-release tape, or the polymer film. Films and the like can be used.
  • first and second two-dimensional materials are graphene (Graphene), graphene oxide (Graphene Oxide), reduced graphene oxide (Reduced Graphene Oxide, RGO), hexagonal boron nitride (Hexagonal Boron Nitride, h-BN) At least one can be used.
  • the first foil and the second foil may use one of copper, a copper alloy, and a nickel material.
  • the first and second foils are removed through an etching process.
  • the first two-dimensional material and the first foil coated with the support film are placed in a container and floated in an APS solution to remove the first foil through an etching process.
  • the support film-coated first two-dimensional material is floated in distilled water for 30 minutes to remove the residue of the foil remaining in the first two-dimensional material or the APS solution which is an etching solution.
  • the second foil obtained by synthesizing the second two-dimensional material coated with another support film is also removed through the etching process as described above.
  • the first two-dimensional material coated with the support film is attached onto the substrate.
  • the substrate is a polymer material.
  • the support film / first two-dimensional material is attached to the substrate through a roll while the support film / first two-dimensional material is placed on the substrate.
  • the support film is removed, so that only the first two-dimensional material remains on the substrate.
  • the temperature of the thermal peeling tape / two-dimensional material / substrate is raised to about 110 to 130 ° C. so that the thermal peeling tape is separated from the two-dimensional material.
  • the support film is removed without any other treatment.
  • the support film is dropped by applying ultraviolet light.
  • the second two-dimensional material coated with the another supporting film is attached onto the first two-dimensional material.
  • the second attaching step S510 is also performed in the same manner as the first attaching step S310.
  • the second support film removing step (S610) also removes the another support film in the same manner as the first support film removing step (S410).
  • the device layer is laminated on the meta-interface layer 300 which is the multi-dimensional two-dimensional material.
  • FIG. 10 is a flowchart of depositing an element layer of a meta surface structure according to an embodiment of the present invention on a meta interface layer using a magnetron sputtering apparatus
  • FIG. 11 is a view of a meta surface structure according to an embodiment of the present invention. It is a conceptual diagram which deposits an element layer on a meta interface layer using a magnetron sputtering apparatus.
  • the method of using off-axis RF magnetron sputtering in the device layer stacking step S700 may include an initial vacuum step S710, a stabilization step S711, and a device layer deposition step S712. Include.
  • the pressure in the chamber is lowered.
  • the off-axis RF magnetron sputtering device is provided with a material of the element layer at each gun end in the chamber, and each end is formed to face each other at a predetermined distance.
  • the gun provided at the end of the substrate is formed spaced apart a predetermined distance in the vertical direction to the gun provided with the device layer material. At this time, the distance of each end of the gun is maintained about 10cm.
  • Such a sputtering device is equipped with a permanent magnet on the cathode, it is possible to deposit various thin films, such as insulators, metals, oxides.
  • the material of the device layer has a diameter of 2 inches (In: 90 wt%, Sn: 10 wt%).
  • the initial vacuum of a chamber is made into 8x10 ⁇ -6> torr or less.
  • the substrate is heated to maintain a constant temperature. That is, the substrate is heated to reach 120 ° C., followed by preliminary sputtering for 5 minutes to remove impurities from the target surface and to stabilize the sputter discharge.
  • the device layer deposition step (S712) a plasma is generated between the material of the device layer and the substrate to deposit the device layer on the meta-interface layer. At this time, the device layer is deposited with an RF power of 125 W at a deposition pressure of 1 mtorr.
  • This method can produce thin films of higher quality than conventional RF sputtering and can prevent the substrate from being damaged or bent as the plasma does not directly affect the substrate.
  • FIG. 12 is a flowchart of attaching an element layer of a meta surface structure according to an embodiment of the present invention on a meta interface layer using a roll transfer device
  • FIG. 13 is a view of a meta surface structure according to an embodiment of the present invention. It is a conceptual diagram which makes an element layer adhere on a meta interface layer using a roll transfer apparatus.
  • the device layer stacking step (S700) of stacking device layers using a roll transfer device includes a sacrificial layer deposition step (S720), a device layer deposition step (S721), and a carrier film attachment step. S722, a sacrificial layer removing step S723, an element layer attaching step S724, and a carrier film removing step S725.
  • the sacrificial layer 220 is deposited on the wafer 210.
  • the wafer 210 uses a silicon (Si) wafer, and the sacrificial layer 220 uses a silver (Ag) thin film.
  • the device layer 200 is deposited on the sacrificial layer 220.
  • the carrier film 230 is attached onto the element layer 200 using a roll transfer device.
  • the sacrificial layer 220 and the wafer 210 are removed through an etching process. That is, in the sacrificial layer removing step S723, the sacrificial layer 220, which is a silver thin film, is separated from the wafer 210.
  • the device layer 200 attached to the carrier film 230 is attached onto the meta-interface layer 300 made of a multi-layered two-dimensional material. .
  • the carrier film removing step (S725) the carrier film 230 is removed and removed.

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Abstract

La présente invention concerne une structure d'interface méta ayant une élasticité améliorée et, plus spécifiquement, une structure d'interface méta dans laquelle une interface méta formée par stratification de deux couches ou plus d'un matériau à deux dimensions ayant une couche monoatomique entre un élément et un substrat formé dans une structure stratifiée coulisse pour transférer la déformation, dont le niveau est plus petit que le niveau de déformation appliqué au substrat, à l'élément, ce qui permet d'améliorer l'élasticité d'une structure dans son ensemble.
PCT/KR2015/007762 2015-07-20 2015-07-24 Structure d'interface méta ayant une élasticité améliorée et son procédé de fabrication WO2017014343A1 (fr)

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CN114096483A (zh) * 2019-02-27 2022-02-25 加泰罗尼亚纳米科学和纳米技术研究所基金会(Icn2) 包含还原氧化石墨烯层堆叠的还原氧化石墨烯膜片及其应用
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