WO2011040079A1 - Dispositif analyseur de radiographie - Google Patents

Dispositif analyseur de radiographie Download PDF

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Publication number
WO2011040079A1
WO2011040079A1 PCT/JP2010/057835 JP2010057835W WO2011040079A1 WO 2011040079 A1 WO2011040079 A1 WO 2011040079A1 JP 2010057835 W JP2010057835 W JP 2010057835W WO 2011040079 A1 WO2011040079 A1 WO 2011040079A1
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Prior art keywords
integrated circuit
insulating substrate
wirings
wiring
radiation imaging
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PCT/JP2010/057835
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English (en)
Japanese (ja)
Inventor
美広 岡田
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富士フイルム株式会社
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Publication of WO2011040079A1 publication Critical patent/WO2011040079A1/fr

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    • H01L27/14665—
    • H01L27/14609—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/30—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming X-rays into image signals

Definitions

  • the present invention relates to a radiographic apparatus, and more particularly, to a radiographic apparatus that captures an image indicated by irradiated radiation.
  • a radiographic apparatus using a radiation imaging device such as an FPD (flat panel detector) capable of directly converting X-ray information into digital data by placing an X-ray sensitive layer on a TFT (Thin film transistor) active matrix substrate. It has become.
  • This radiation imaging device has an advantage that an image can be confirmed instantly and a moving image can be confirmed as compared with a conventional imaging plate, and is rapidly spreading.
  • Patent Document 1 discloses a technique for forming a scanning wiring driving circuit and a signal line driving circuit for driving TFTs in a flexible display substrate in an active matrix organic EL display (organic electroluminescence display). ing. JP 2000-298198 A
  • the scanning wiring driving circuit or the signal line driving circuit is poor in yield, and scanning is performed when the scanning is curved. Disconnections are likely to occur in the wiring in the wiring drive circuit and signal line drive circuit. Therefore, there is a problem that a radiation image cannot be stably taken.
  • the scanning wiring drive circuit can be composed of a shift register having a relatively small circuit scale, even if it is a poly-Si (polysilicon) TFT technology or an a-Si (amorphous silicon) TFT having a low mobility, a TFT array Techniques for forming on a substrate have been proposed.
  • poly-Si TFTs and a-Si TFTs formed by TFT manufacturing equipment have low mobility and a large minimum line width, so a large area is required to realize a drive circuit.
  • the mobility and minimum line width of MOS transistors on silicon are 600 cm2 / V ⁇ s and 0.1-0.5 um, whereas in poly-Si TFT, 10-30 cm2 / V ⁇ s, 3-5 um and a-Si TFT 0.5cm2 / V ⁇ s, 4-6um.
  • the poly-Si TFT requires about 300 times the area of the MOS transistor, and the a-Si TFT requires 12,000 times the area of the MOS transistor.
  • an object of the present invention is to provide a radiation imaging apparatus that can bend and stably capture a radiation image.
  • the radiation imaging apparatus has at least one side or two opposite sides on the outer edge in one direction in plan view, and each is irradiated with radiation to be detected.
  • a plurality of pixels each having a switch element for accumulating the charges generated and reading the charges, and a plurality of scanning wirings through which a control signal for switching each switch element included in each pixel flows;
  • a flexible insulating substrate provided with a plurality of signal wirings through an insulating film through which an electric signal corresponding to the electric charge stored in the pixel flows according to the switching state of each switch element;
  • the first integrated circuit is provided on the insulating substrate for each of the first number of scanning wirings, and outputs the control signal to the first number of scanning wirings.
  • a second integrated circuit that is provided on the insulating substrate for each predetermined second number of the signal wirings and that detects an electrical signal flowing through the second number of signal wirings; and A control circuit which is provided on the one side or two opposite sides and is electrically connected to the first integrated circuit and the second integrated circuit to control operations of the first integrated circuit and the second integrated circuit; It is equipped with.
  • the radiation imaging apparatus of the present invention is generated by irradiating a flexible insulating substrate having at least one side or two opposite sides at one edge in a plan view with radiations to be detected.
  • a plurality of pixels each provided with a switch element for accumulating charges and reading the charges are provided in a matrix.
  • On this insulating substrate a plurality of scanning wirings through which control signals for switching each switch element provided in each pixel flow, and an electrical signal corresponding to the charge accumulated in the pixel according to the switching state of each switch element flow.
  • a plurality of signal wirings are provided via an insulating film.
  • a first integrated circuit that outputs a control signal to each of the predetermined number of scanning wirings is provided on the insulating substrate for each predetermined number of scanning wirings.
  • a second integrated circuit that detects an electrical signal flowing through the second number of signal wirings is provided for each of the predetermined second number of signal wirings.
  • the operation of the first integrated circuit and the second integrated circuit is controlled by being electrically connected to the first integrated circuit and the second integrated circuit on one side or two opposite sides of the insulating substrate.
  • a control circuit is provided.
  • pixels are provided in a matrix, and a plurality of scanning wirings through which control signals for switching the switch elements of the pixels flow and charges accumulated in the pixels according to the switching states of the switch elements
  • a first integrated circuit that outputs a control signal and an electrical signal that flows through the signal wiring are detected on a flexible insulating substrate provided with a plurality of signal wirings through which an electrical signal corresponding to the current flows via an insulating film
  • a control circuit for controlling the operation of the first integrated circuit and the second integrated circuit is provided on one side of the insulating substrate or on the two opposite sides, so that the control circuit is connected to the insulating substrate. Therefore, the insulating substrate can be curved.
  • the insulating substrate does not bend at the first integrated circuit and the second integrated circuit, but is bent at a portion between the first integrated circuit and the second integrated circuit, so that the insulating substrate is bent in the first integrated circuit and the second integrated circuit. Since no disconnection occurs in the wiring, a radiation image can be stably taken.
  • the plurality of signal wirings are provided in parallel in the one direction
  • the plurality of scanning wirings are provided in parallel in a crossing direction with respect to the one direction
  • a plurality of second wirings that are provided in parallel in one direction and are provided via the first wiring and the insulating film, and are connected to the different first wirings through contact holes formed in the insulating film. Also good.
  • the first integrated circuit and the second integrated circuit may be provided on the peripheral portion of the one side or the two opposite sides on the insulating substrate.
  • control circuit includes a first control circuit that controls an operation of the first integrated circuit and a second control circuit that controls an operation of the second integrated circuit, and the first integrated circuit,
  • the first control circuit, the second integrated circuit, and the second control circuit may be provided to face the two sides of the insulating substrate.
  • the plurality of signal lines are provided on the insulating substrate in parallel with the one direction, and the plurality of scanning lines are provided in parallel with the direction intersecting the one direction.
  • the first integrated circuit is provided in the peripheral portion in the cross direction on the insulating substrate, and the connection wiring provided on the insulating substrate or The control circuit may be connected via external wiring outside the insulating substrate.
  • the radiation imaging apparatus of the present invention has an excellent effect of being able to bend and stably capture a radiation image.
  • FIG. 1 shows a detailed configuration of the radiation imaging element 10 according to the present embodiment.
  • the radiation imaging element 10 has a plurality of pixels 20 arranged in a matrix in a radiographic image capturing area E on a flexible insulating substrate 1 having a flat plate rectangular shape.
  • Each pixel 20 includes a sensor unit 103 that accumulates charges generated by light irradiation, and a TFT switch 4 for reading out the charges accumulated in the sensor unit 103.
  • the radiation imaging element 10 includes a plurality of scanning wirings 101 for turning on / off the TFT switch 4 and a plurality of signal wirings 3 for reading out the electric charges accumulated in the sensor unit 103 on the substrate 1. Is provided.
  • the signal wiring 3 is provided in parallel in each pixel column in one direction (lateral direction in FIG. 1) in the matrix arrangement of the plurality of pixels 20 provided. Yes.
  • the first wiring 101 ⁇ / b> A is provided as the scanning wiring 101 in each pixel column in the intersecting direction (vertical direction in FIG. 1) with respect to one direction of the matrix arrangement of the pixels 20.
  • a second wiring 101B is provided in parallel in each pixel column in one direction in the matrix arrangement.
  • Each of the second wirings 101B and each of the first wirings 101A is connected to the first wiring 101A that is different from each of the second wirings 101B on a one-to-one basis.
  • the wiring 101A and the n-th second wiring 101B are connected.
  • a scintillator 30 (see FIG. 3) made of GOS or the like is attached to the surface.
  • the irradiated radiation such as X-rays is converted into light by the scintillator 30 and irradiated to the sensor unit 103.
  • the sensor unit 103 receives the light emitted from the scintillator 30 and accumulates electric charges.
  • Each signal wiring 3 has an electrical signal (image signal) indicating a radiation image in accordance with the amount of charge accumulated in the sensor unit 103 when any TFT switch 4 connected to the signal wiring 3 is turned on. Flows.
  • an amplifier IC (IntegratedIntegrCircuit) 105 is provided side by side for each predetermined first (for example, 256) signal wires 3 on one end side in the signal wiring direction. Yes. Each signal wiring 3 is connected to the amplifier IC 105 for each first number.
  • the gate IC 104 is alternately arranged with the amplifier IC 105 for each predetermined second number (for example, 256) of scanning wirings 101 on one end side in the signal wiring direction. Is provided. Each scanning wiring 101 is connected to the amplifier IC 105 for each second number. In FIG. 1 and FIGS. 8, 11, 13, and 14 to be described later, the connection portion between the signal wiring 3 and the amplifier IC 105 and the connection portion between the scanning wiring 101 and the gate IC 104 are omitted.
  • the gate IC 104 outputs a control signal for turning on / off the TFT switch 4 to each scanning wiring 101.
  • the amplifier IC 105 includes an amplifier circuit for amplifying an input electric signal for each signal wiring 3.
  • the amplifier IC 105 detects the amount of electric charge accumulated in each sensor unit 103 as information of each pixel 20 constituting an image by amplifying and detecting an electric signal input from each signal wiring 3 by an amplifier circuit. .
  • 2 and 3 are a plan view and a side view showing a configuration of the radiation imaging element 10 according to the present embodiment and a control unit 50 for driving the radiation imaging element 10.
  • the radiation imaging element 10 is provided with a male interface (I / F) connector 110 at one end in the signal wiring direction.
  • Each gate IC 104 and each amplifier IC 105 are connected to an I / F connector 110 via an interface (I / F) circuit 112.
  • control unit 50 transforms the control circuit 120 for controlling the operation of each gate IC 104 and each amplifier IC 105, the battery 122, and the electric power charged in the battery 122 to predetermined voltages, respectively.
  • a power supply circuit 124 that supplies the radiation imaging element 10.
  • the control circuit 120 includes a female I / F connector 126 and an output terminal 128, and the I / F connector 110 of the radiation imaging element 10 is connected to the I / F connector 126.
  • the control circuit 120 is electrically connected to each gate IC 104 and each amplifier IC 105 via the I / F connector 126, the I / F connector 110, and the I / F circuit 112.
  • the control circuit 120 performs a predetermined process on the electrical signal detected in each amplifier IC 105 and outputs it from the output terminal 128, and outputs a timing signal indicating the signal detection timing to each amplifier IC 105. In response to this, a timing signal indicating the output timing of a control signal for turning on / off the TFT switch 4 is output.
  • FIG. 4 is a plan view showing the structure of one pixel unit of the radiation imaging element 10 according to the present embodiment
  • FIG. 5 is a sectional view taken along the line AA of FIG. Yes.
  • the radiation imaging element 10 has a second wiring 101 ⁇ / b> B formed on the substrate 1.
  • the wiring layer in which the second wiring 101B is formed (hereinafter this wiring layer is also referred to as “first signal wiring layer”) is formed using Al or Cu, or a laminated film mainly composed of Al or Cu. However, it is not limited to these.
  • a first insulating film 15A is formed on one surface so as to cover the second wiring 101B.
  • the first wiring 101A and the gate electrode 2 are formed on the first insulating film 15A, and the first wiring 101A and the gate electrode 2 are connected (see FIG. 4).
  • the wiring layer in which the first wiring 101A and the gate electrode 2 are formed (hereinafter, this wiring layer is also referred to as “second signal wiring layer”) is made of Al or Cu, or a laminated film mainly composed of Al or Cu. However, the present invention is not limited to these.
  • a contact hole 19 is formed at a position where the nth first wiring 101A and the nth second wiring 101B intersect.
  • the n-th first wiring 101 ⁇ / b> A and the n-th second wiring 101 ⁇ / b> B are connected through the contact hole 19.
  • a second insulating film 15B is formed on one surface so as to cover the first wiring 101A and the gate electrode 2.
  • the portion of the second insulating film 15B located on the gate electrode 2 functions as a gate insulating film in the TFT switch 4.
  • the insulating film 15B is made of, for example, SiN X or the like, and is formed by, for example, CVD (Chemical Vapor Deposition) film formation.
  • the semiconductor active layer 8 is formed in an island shape on the gate electrode 2 on the second insulating film 15B.
  • the semiconductor active layer 8 is a channel portion of the TFT switch 4 and is made of, for example, an amorphous silicon film.
  • a source electrode 9 and a drain electrode 13 are formed on these upper layers.
  • the signal wiring 3 is formed together with the source electrode 9 and the drain electrode 13.
  • the source electrode 9 is connected to the signal wiring 3 (see FIG. 4).
  • the wiring layer in which the signal wiring 3 and the source electrode 9 are formed (hereinafter, this wiring layer is also referred to as “third signal wiring layer”) is made of Al or Cu, or a laminated film mainly composed of Al or Cu. However, it is not limited to these.
  • An impurity doped semiconductor layer (not shown) made of impurity doped amorphous silicon or the like is formed between each of the source electrode 9 and the drain electrode 13 and the semiconductor active layer 8. These constitute the TFT switch 4 for switching.
  • a TFT protective film layer 11 is formed on almost the entire surface of the region on the substrate 1 where the pixels are provided so as to cover the semiconductor active layer 8, the source electrode 9, the drain electrode 13, and the signal wiring 3. Is formed.
  • the TFT protective film layer 11 is made of, for example, SiN X or the like, and is formed by, for example, CVD film formation.
  • a coating type interlayer insulating film 12 is formed on the TFT protective film layer 11.
  • the capacitance between the metals disposed in the upper layer and the lower layer of the interlayer insulating film 12 is suppressed by the interlayer insulating film 12.
  • such a material also has a function as a flattening film, and has an effect of flattening a lower step.
  • a contact hole 16 is formed in the interlayer insulating film 12 and the TFT protective film layer 11 at a position facing the drain electrode 13.
  • a lower electrode 14 of the sensor unit 103 is formed on the interlayer insulating film 12 so as to cover the pixel region while filling the contact hole 16.
  • the lower electrode 14 is connected to the drain electrode 13 of the TFT switch 4.
  • the semiconductor layer 6 described later is as thick as about 1 ⁇ m, the lower electrode 14 has almost no limitation on the material as long as it has conductivity. Therefore, there is no problem if it is formed using a conductive metal such as an Al-based material or ITO (indium tin oxide).
  • the lower electrode 14 is preferably made of an alloy mainly composed of a light shielding metal or a laminated film.
  • a semiconductor layer 6 that functions as a photodiode is formed on the lower electrode 14.
  • a PIN structure photodiode in which an n + layer, an i layer, and a p + layer (n + amorphous silicon, amorphous silicon, and p + amorphous silicon) are stacked is employed as the semiconductor layer 6.
  • n + layer 6A, i layer 6B, and p + layer 6C are sequentially stacked.
  • the i layer 6B generates charges (pairs of free electrons and free holes) when irradiated with light.
  • the n + layer 6A and the p + layer 6C function as contact layers, and electrically connect the lower electrode 14 and an upper electrode 7 (described later) to the i layer 6B.
  • the lower electrode 14 is made larger than the semiconductor layer 6.
  • the semiconductor layer 6 is thin (for example, 0.5 ⁇ m or less)
  • the distance from the channel portion of the TFT switch 4 to the end portion of the lower electrode 14 made of a light shielding metal is set. 5 ⁇ m or more is secured.
  • An upper electrode 7 is formed on the semiconductor layer 6.
  • a material having high light transmittance such as ITO or IZO (zinc oxide indium) is used.
  • a protective insulating film 17 is formed on the interlayer insulating film 12, the semiconductor layer 6, and the upper electrode 7 so as to have an opening 27 ⁇ / b> A in a part corresponding to the upper electrode 7.
  • the protective insulating film 17 is made of, for example, SiNx, like the TFT protective film layer 11, and is formed by, for example, CVD film formation.
  • the common electrode wiring 25 is formed of Al or Cu, or an alloy or laminated film mainly composed of Al or Cu.
  • the common electrode wiring 25 has a contact pad 27 formed in the vicinity of the opening 27 ⁇ / b> A and is electrically connected to the upper electrode 7 through the opening 27 ⁇ / b> A of the protective insulating film 17.
  • a protective film is further formed on the protective insulating film 17 with an insulating material having low light absorption as necessary, and the surface has low light absorption.
  • a scintillator 30 (see FIG. 3) made of GOS or the like is attached using an adhesive resin.
  • the I / F connector 110 is connected to the I / F connector 126 of the control unit 50, and the radiation imaging element 10 is connected to the control unit 50.
  • the radiation imaging element 10 according to the present embodiment is provided with a connection terminal to the outside on one side.
  • the radiation imaging apparatus 100 can easily replace the radiation imaging element 10 and, for example, can be replaced with a radiation imaging element 10 having an optimum sensitivity characteristic according to the subject part.
  • the irradiated X-rays When the radiation imaging element 10 is irradiated with X-rays, the irradiated X-rays are absorbed by the scintillator 30 and converted into visible light. X-rays may be emitted from either the front side or the back side of the radiation imaging element 10. The light converted into visible light by the scintillator 30 is applied to the semiconductor layer 6 of the sensor unit 103 arranged in a matrix on the substrate 1.
  • the radiation imaging element 10 is provided with the semiconductor layer 6 separately for each pixel unit.
  • a predetermined bias voltage is applied to the semiconductor layer 6 from the upper electrode 7 through the common electrode wiring 25, and when light is irradiated, charges are generated inside.
  • the semiconductor layer 6 has a PIN structure in which an n + layer, an i layer, and a p + layer are stacked in this order from the lower layer, a negative bias voltage is applied to the upper electrode 7, and the i layer
  • the applied bias voltage is about ⁇ 5 to ⁇ 10V.
  • an ON signal (+10 to 20 V) is sequentially applied to the gate electrode 2 of the TFT switch 4 via the scanning wiring 101.
  • an electric signal corresponding to the amount of charge accumulated in the lower electrode 14 flows out to the signal wiring 3.
  • the amplifier IC 105 detects the amount of electric charge accumulated in each sensor unit 103 based on the electrical signal that has flowed out to the signal wiring 3 as information of each pixel constituting the image. Thereby, the image information which shows the image shown with the X-ray irradiated to the radiation image pick-up element 10 can be obtained.
  • the pixels 20 are formed in a matrix on the flexible substrate 1, and the gate IC 104 and the amplifier IC 105 are arranged on one side of the substrate 1 in one direction. It is provided in the periphery.
  • the radiation imaging element 10 is connected to the control unit 50 at one side in one direction where the gate IC 104 and the amplifier IC 105 are provided.
  • the gate IC 104, the amplifier IC 105, and the control unit are also used when the radiation imaging device 10 is curved in one direction and the subject S is captured. 50 is not curved. Accordingly, no disconnection occurs in the wiring in the gate IC 104, the amplifier IC 105, and the control unit 50, so that a radiation image can be stably captured.
  • FIG. 8 shows a detailed configuration of the radiation imaging element 10 according to the second embodiment.
  • the same parts as those in the first embodiment (see FIG. 1) are denoted by the same reference numerals, and description thereof is omitted here.
  • the scanning wirings 101 are provided in parallel in each pixel column in the crossing direction (vertical direction in FIG. 8) with respect to one direction of the matrix arrangement of the pixels 20.
  • the radiation imaging element 10 is provided with a gate IC 104 on one end side in the signal wiring direction, and each scanning wiring 101 is connected to a peripheral portion of the substrate 1 or a wiring (not shown) provided on the back surface of the substrate 1. Connected to the gate IC 104.
  • FIG. 9 is a plan view showing the structure of one pixel unit of the radiation imaging element 10 according to the second embodiment.
  • FIG. 10 is a sectional view taken along line AA of FIG. Yes.
  • the same parts as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted here.
  • the first signal wiring layer and the first insulating film 15A are not formed as compared with the first embodiment.
  • the radiation imaging element 10 is constituted by layers higher than the second signal wiring layer.
  • the radiation imaging element 10 has a male I / F connector 110 at one end in the signal wiring direction, as shown in FIGS. Is provided.
  • Each gate IC 104 and each amplifier IC 105 are connected to an I / F connector 110 via an I / F circuit 112, and the I / F connector 110 is connected to an I / F connector 126 of the control unit 50 as shown in FIG. To the control unit 50.
  • the radiation imaging element 10 according to the second embodiment has a connection terminal with the outside on one side, the radiation imaging element 10 can be easily replaced.
  • the gate IC 104 and the amplifier IC 105 are provided on one side of the substrate 1 and are connected to the control unit 50 on the one side, so that the radiation imaging element 10 itself is integrated as shown in FIG. 7.
  • the gate IC 104, the amplifier IC 105, and the control unit 50 are not curved even when the subject S is shot in a curved direction. Accordingly, no disconnection occurs in the wiring in the gate IC 104, the amplifier IC 105, and the control unit 50, so that a radiation image can be stably captured.
  • FIG. 11 shows a detailed configuration of the radiation imaging element 10 according to the third embodiment.
  • the same parts as those in the first embodiment (see FIG. 1) are denoted by the same reference numerals, and description thereof is omitted here.
  • the scanning wirings 101 are provided in parallel in each pixel column in the crossing direction (vertical direction in FIG. 11) with respect to one direction of the matrix arrangement of the pixels 20.
  • the radiation imaging element 10 is provided with a gate IC 104 on one end side in the scanning wiring direction, and each scanning wiring 101 is connected to the gate IC 104.
  • each gate IC 104 is connected to the farthest amplifier IC 105 via a connection wiring 130 provided in the peripheral portion of the substrate 1, and the I / O via the amplifier IC 105 and the interface circuit 112.
  • the F connector 110 is connected.
  • the I / F connector 110 is connected to the I / F connector 126 of the control unit 50 as in the first embodiment.
  • the radiation image sensor 10 is connected to the control unit 50.
  • the radiation imaging element 10 since the connection terminal with the outside is provided on one side, the radiation imaging element 10 can be easily replaced.
  • the gate IC 104 is provided on one end side in the scanning wiring direction, but the substrate 1 has flexibility. As shown in FIG. 7, when imaging is performed by curving the radiation imaging device 10 itself, the substrate 1 between the gate ICs 104 is curved and the gate ICs 104 are not curved. Therefore, since no disconnection occurs in the wiring within the gate IC 104, a radiation image can be stably captured.
  • FIG. 13 shows a detailed configuration of the radiation imaging element 10 according to the fourth embodiment.
  • the same parts as those in the first embodiment (see FIG. 1) are denoted by the same reference numerals, and description thereof is omitted here.
  • the scanning wirings 101 are provided in parallel in the respective pixel columns in the crossing direction (vertical direction in FIG. 13) with respect to one direction of the matrix arrangement of the pixels 20.
  • the radiation imaging element 10 is provided with an amplifier IC 105 on one end side in the scanning wiring direction, and each scanning wiring 101 is connected to the amplifier IC 105.
  • the amplifier IC 105 is provided outside the substrate 1 and connected to the interface circuit 112 via an external wiring 132 such as a printed wiring board, and is connected to the I / F connector 110 via the interface circuit 112.
  • the I / F connector 110 is connected to the I / F connector 126 of the control unit 50 as in the first embodiment.
  • the radiation image sensor 10 is connected to the control unit 50.
  • the radiation imaging element 10 according to the fourth embodiment is provided with a connection terminal on the one side as in the first embodiment, so that the radiation imaging element 10 can be easily replaced. Become.
  • the radiation imaging element 10 is provided with a gate IC 104 on one end side in the scanning wiring direction, but the substrate 1 is flexible. As shown in FIG. 7, when imaging is performed by curving the radiation imaging device 10 itself, the substrate 1 between the gate ICs 104 is curved and the gate ICs 104 are not curved. Therefore, since no disconnection occurs in the wiring within the gate IC 104, a radiation image can be stably captured.
  • the gate IC 104 and the amplifier IC 105 may be provided on two opposite sides of the substrate 1.
  • a gate IC 104 is provided on one side of two opposing sides
  • an amplifier IC 105 is provided on the other side.
  • the control circuit 120 may be provided on one side of the two sides and connected to the other side via an external circuit.
  • the gate control circuit 120 ⁇ / b> A that controls the gate IC 104 and the amplifier control circuit 120 ⁇ / b> B that controls the amplifier IC 105 may be divided and provided on two opposing sides.
  • the present invention is not limited to this.
  • the second wiring 101B and the signal wiring 3 may be formed in the same signal wiring layer.
  • the radiation imaging element 10 of the first embodiment when the second wiring 101B shown in FIG. 5 is formed in the same third signal wiring layer as the signal wiring 3, the first signal wiring layer and the first insulating film 15A are formed. It becomes unnecessary. In this case, it is necessary to ensure insulation between the second wiring 101B and the signal wiring 3.
  • the present invention is not limited to this. Is not to be done.
  • the signal wiring 3 is formed at the end portion of the pixel column in one direction
  • the second wiring 101B is formed at the center portion of the pixel column in one direction so that the distance between the signal wiring 3 and the second wiring 101B is increased. It may be. Thereby, the parasitic capacitance of the signal wiring 3 can be suppressed.
  • FIG. 15 and 16 show an example of another configuration of the radiation imaging element 10 applicable to the first embodiment.
  • FIG. 15 is a plan view showing the structure of one pixel unit of the radiation imaging element 10
  • FIG. 16 is a cross-sectional view taken along the line AA of FIG.
  • the same parts as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted here.
  • the radiation image sensor 10 is not formed with the first signal wiring layer and the first insulating film 15 ⁇ / b> A as compared with the first embodiment.
  • the second signal wiring layer and higher layers are included.
  • the second wiring 101B is formed on the TFT protective film layer 11 and passes through the central portion of the pixel column in one direction.
  • a contact hole 19 (see FIG. 15) is formed at a position where the nth first wiring 101A and the nth second wiring 101B intersect.
  • the n-th first wiring 101 ⁇ / b> A and the n-th second wiring 101 ⁇ / b> B are connected through the contact hole 19. If another wiring layer is formed below the wiring layer on which the gate electrode 2 is formed, problems may occur in alignment between layers, yield, etc., so the second wiring 101B is formed on the TFT protective film layer 11 You may make it do.
  • the present invention when the present invention is applied to the radiation image sensor 10 of the indirect conversion method in which radiation is once converted into light by the scintillator 30 and the converted light is converted into electric charge by the sensor unit 103 and accumulated.
  • the present invention is not limited to this.
  • the present invention may be applied to a direct-conversion radiation imaging element that directly converts radiation into electric charge and stores it in a sensor unit using amorphous selenium or the like.
  • the radiation imaging apparatus 100 may detect a particle beam, other electromagnetic waves (visible light, ultraviolet rays, infrared rays) or the like as radiation.
  • the configuration of the radiation imaging element 10 and the configuration of the radiation imaging apparatus 100 described in the above embodiment are merely examples, and it goes without saying that they can be appropriately changed without departing from the gist of the present invention.

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  • Measurement Of Radiation (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

L'invention concerne un substrat isolant flexible (1) doté de pixels (20) en matrice, le substrat isolant contenant une pluralité de lignes de câblage de balayage (101) qui transmettent des signaux de commande actionnant les commutateurs à TFT (4) des pixels respectifs (20) et une pluralité de lignes de câblage de signal (3) qui transmettent des signaux électriques correspondant aux charges accumulées dans les pixels correspondant à l'état de commutation des commutateurs à TFT (4) respectifs, un film isolant se trouvant entre les lignes de câblage de balayage et les lignes de câblage de signal. La surface du substrat isolant est pourvue d'une porte IC (104) qui sort des signaux de commande et d'un amplificateur IC (105) qui détecte les signaux électriques transmis dans les lignes de câblage de signal. Un circuit de commande (120) qui commande le fonctionnement de la porte IC (104) et de l'amplificateur IC (105) se trouve sur un côté ou en face des deux côtés du substrat isolant (1). Une telle configuration permet d'obtenir un dispositif analyseur de radiographie pouvant être courbé et capable de recevoir de manière stable une radiographie.
PCT/JP2010/057835 2009-09-29 2010-05-07 Dispositif analyseur de radiographie WO2011040079A1 (fr)

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Application Number Priority Date Filing Date Title
JP2009-225286 2009-09-29
JP2009225286A JP2011075327A (ja) 2009-09-29 2009-09-29 放射線撮影装置

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WO2011040079A1 true WO2011040079A1 (fr) 2011-04-07

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