WO2011018849A1 - Dispositif stratifié de conversion photoélectrique et module de conversion photoélectrique - Google Patents

Dispositif stratifié de conversion photoélectrique et module de conversion photoélectrique Download PDF

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Publication number
WO2011018849A1
WO2011018849A1 PCT/JP2009/064269 JP2009064269W WO2011018849A1 WO 2011018849 A1 WO2011018849 A1 WO 2011018849A1 JP 2009064269 W JP2009064269 W JP 2009064269W WO 2011018849 A1 WO2011018849 A1 WO 2011018849A1
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photoelectric conversion
layer
translucent
conversion body
type
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PCT/JP2009/064269
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English (en)
Japanese (ja)
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順次 荒浪
樋口　永
久 坂井
崇宏 大佐々
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京セラ株式会社
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Priority to PCT/JP2009/064269 priority Critical patent/WO2011018849A1/fr
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/043—Mechanically stacked PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a stacked photoelectric conversion device and a photoelectric conversion module in which a plurality of photoelectric conversion bodies are stacked.
  • Patent Document 1 As a photoelectric conversion device that converts light into electricity such as a solar cell, there is one disclosed in Patent Document 1, for example.
  • This photoelectric conversion device is configured by sequentially stacking a p-type semiconductor layer, a fullerene layer, and a back electrode on a transparent electrode on a transparent substrate.
  • the p-type semiconductor layer facing the sunlight and the fullerene layer laminated thereon generate excitons from incident light, and charge separation is performed at the interface between the p-type semiconductor and the fullerene layer. And holes are transported by the p-type semiconductor, and electrons are transported by the fullerene layer.
  • the photoelectric conversion device having such a configuration it is difficult to control the shape of the interface between the p-type semiconductor layer and the fullerene layer, so that the charge mobility is increased or the exciton is deactivated. It is difficult to suppress, and as a result, the photoelectric conversion efficiency may be reduced. Therefore, a photoelectric conversion device that can obtain higher photoelectric conversion efficiency is demanded.
  • a stacked photoelectric conversion device includes a first photoelectric conversion body having translucency, a conductor layer located on a part of the first photoelectric conversion body, and the conductor. And a second photoelectric conversion body positioned on the layer.
  • a photoelectric conversion module is a photoelectric conversion module including a plurality of the stacked photoelectric conversion devices, wherein the plurality of stacked photoelectric conversion devices are arranged side by side and are electrically connected to each other. It is connected to the.
  • FIG. 1 is a cross-sectional view showing a stacked photoelectric conversion device according to an embodiment of the present invention.
  • the stacked photoelectric conversion device 1 is formed on a translucent substrate 31a, a translucent first photoelectric conversion body 3 formed on the translucent substrate 31a, and the first photoelectric conversion body 3.
  • a light-transmitting conductive layer 31b is formed on the light-transmitting substrate 31a, and the conductive substrate 31 is configured by combining them.
  • the translucent substrate 31a may not be provided, and in that case, the first photoelectric conversion body 3 itself may be formed of a hard plate. Further, the light-transmitting conductive layer 31b may not be provided, and in that case, a collector electrode or the like may be provided at an end portion of the first photoelectric conversion body 3. Further, when there are the light-transmitting substrate 31a and the light-transmitting conductive layer 31b, the light-transmitting substrate 31a functions as a support and a light transmitting body for the first photoelectric conversion body 3, and the light-transmitting conductive layer 31b is transparent. This is preferable in that it functions as a light-sensitive large-area electrode.
  • the first photoelectric conversion body 3 has translucency.
  • having translucency means that the transmittance of light of a specific wavelength is 10% or more.
  • the specific wavelength is a wavelength at which the second photoelectric converter 2 has spectral sensitivity.
  • the first photoelectric conversion body 3 is also referred to as a translucent photoelectric conversion body 3.
  • spectral sensitivity means that when light is incident, the light can be absorbed to generate a current.
  • the photoelectric conversion device of the present embodiment light is incident from the first photoelectric converter 3 side, and a part of the incident light is photoelectrically converted by the first photoelectric converter 3. Moreover, the light which permeate
  • the translucent photoelectric conversion body 3 is made of a semiconductor material that converts light into electricity.
  • the translucent photoelectric conversion body 3 is mainly composed of an inorganic material.
  • durability of the stacked photoelectric conversion device 1 with respect to light is improved.
  • a translucent photoelectric conversion body 3 there are those that generate an internal electric field such as a pn junction type, a Schottky junction type, and a hetero junction type in addition to the pin junction type.
  • the second photoelectric converter 2 is made of a semiconductor material that converts light into electricity.
  • the second photoelectric converter 2 is an organic semiconductor material.
  • an organic semiconductor refers to a semiconductor containing an organic material as a main component.
  • the production of the second photoelectric conversion body 2 (hereinafter, the second photoelectric conversion body 2 made of an organic semiconductor material is referred to as an organic photoelectric conversion body 2) is a process at a relatively low temperature compared to an inorganic material. And easy to manufacture.
  • the translucent photoelectric conversion body 3 is made of an inorganic material having spectral sensitivity with respect to light having a relatively short wavelength, and the organic photoelectric conversion body 2 is made transparent.
  • the organic photoelectric converter 2 can be suppressed by suppressing the short wavelength light from entering the organic photoelectric converter 2.
  • the spectral sensitivity can be increased by combining the translucent photoelectric conversion body 3 and the organic photoelectric conversion body 2, and the photoelectric conversion efficiency of the stacked photoelectric conversion device 1 can be increased. Can do.
  • the peak wavelength of the spectral sensitivity of the second photoelectric converter 2 is longer than the peak wavelength of the spectral sensitivity of the translucent photoelectric converter 3.
  • the 2nd photoelectric conversion body 2 and the translucent photoelectric conversion body 3 can photoelectrically convert the light of a wavelength range which each differed more, and high conversion efficiency is obtained.
  • Some organic photoelectric conversion bodies 2 generate an internal electric field such as a pin junction type, a pn junction type, a bulk hetero type, and a superlattice type.
  • a configuration including the layer 22 and the hole blocking layer 21 is shown.
  • the organic photoelectric conversion body 2 can be used by repeatedly laminating 2 to 3 layers in order to compensate for low mobility. Further, in order to match the current with the organic photoelectric conversion body 2, the spectral sensitivity can be adjusted by thinning the translucent photoelectric conversion body 3, or the translucent photoelectric conversion body 3 can be repeatedly laminated. . In this case, higher conversion efficiency can be achieved by inserting the conductor layer 4 between the photoelectric converters.
  • the conductor layer 4 is for improving the electrical connection between the translucent photoelectric conversion body 3 and the second photoelectric conversion body 2, and electrons extracted from the translucent photoelectric conversion body 3 ( Or holes) and holes (or electrons) extracted from the second photoelectric converter 2 can be efficiently recombined. As a result, the photoelectric conversion efficiency of the stacked photoelectric conversion device 1 of the present invention can be increased.
  • the conductor layer 4 is translucent in order to favorably advance light from the translucent photoelectric converter 3 to the second photoelectric converter 2.
  • the conductor layer 4 is also referred to as a translucent recombination layer 4.
  • the conductor layer 4 is partially formed at the interface between the translucent photoelectric converter 3 and the second photoelectric converter 2. That is, the conductor layer 4 is not formed over the entire interface between the translucent photoelectric conversion body 3 and the second photoelectric conversion body 2 but has a non-forming portion.
  • the light transmittance from the translucent photoelectric conversion body 3 to the 2nd photoelectric conversion body 2 can be raised, and the photoelectric conversion efficiency of the laminated photoelectric conversion apparatus 1 can be raised. .
  • the translucent photoelectric conversion body 3 and the second photoelectric conversion body 2 are joined via the conductor layer 4. It is preferable that there is a portion where the translucent photoelectric conversion body 3 and the second photoelectric conversion body 2 are in direct contact with each other.
  • contact of the conductor layer 4 and the translucent photoelectric conversion body 3 is carried out.
  • the area or the contact area between the conductor layer 4 and the second photoelectric converter 2 can be increased, and the electrons and holes generated by the translucent photoelectric converter 3 and the second photoelectric converter 2 Can be efficiently recombined by the conductor layer 4. As a result, the photoelectric conversion efficiency of the stacked photoelectric conversion device 1 can be further improved.
  • the translucent photoelectric converter 3 and the second photoelectric converter 2 each include a semiconductor layer that is in direct contact with the conductor layer 4.
  • produced in the translucent photoelectric conversion body 3 and the 2nd photoelectric conversion body 2 can be moved quickly to the conductor layer 4, and the electron and hole in the conductor layer 4 are The recombination efficiency can be increased.
  • FIG. 6 shows a cross-sectional view of a photoelectric conversion module 10 in which the stacked photoelectric conversion device 1 of FIG. 1 is modularized.
  • the photoelectric conversion module 10 a plurality of the stacked photoelectric conversion devices 1 of the present embodiment are provided side by side on a substrate and are electrically connected.
  • FIG. 6 shows a unit body of the stacked photoelectric conversion device 1. A plurality of the unit bodies are arranged so that their side surfaces face each other, and they are connected in series, in parallel, or in series-parallel.
  • the photoelectric conversion module 10 is obtained.
  • the translucent conductive layer 31b is divided by laser scribing, and the translucent photoelectric conversion body 3, the translucent recombination layer 4, and the organic photoelectric conversion.
  • the electrode 5 is patterned and pulled out to the light transmitting photoelectric conversion body 3 side (lower side).
  • 31bb is a parting part of the translucent conductive layer 31b.
  • the lower end portion of the electrode 5 is connected to the translucent conductive layer 31 b that is an electrode on the positive electrode side of the adjacent stacked photoelectric conversion device 1.
  • an insulating layer (not shown) is provided at a portion of the organic photoelectric conversion body 2, the translucent recombination layer 4, and the translucent photoelectric conversion body 3 that is in contact with the electrode 5 so as not to be electrically connected to the electrode 5. May be formed. Or since the organic photoelectric conversion body 2, the translucent recombination layer 4, and the translucent photoelectric conversion body 3 are comparatively high resistance, the insulating layer does not need to be formed.
  • the sealing material 6 is bonded together by the sealing material 6.
  • the space inside the sealing material 6 is in a vacuum state, a reduced pressure state, an inert gas sealed state, and the like, and oxidation by oxygen and water is suppressed.
  • the electrode 5 is formed by a vapor deposition method, a sputtering method, a printing method, or the like using a mask.
  • the sealing material 6 is made of glass frit, epoxy resin, ionomer, or the like.
  • the sealing material 6 can be formed by a printing method, a thermocompression bonding method, an ultraviolet curing method, or the like.
  • it is preferably performed in a dark place at as low a temperature as possible.
  • the atmosphere gas during the assembly operation may be an inert gas, or the assembly operation may be performed in a reduced pressure state or a vacuum state, in which case the organic photoelectric conversion is performed. Deterioration of the body 2 is suppressed.
  • the counter substrate 7 is made of glass, metal, plastic or the like. In the case of using the counter substrate 7 made of plastic, it is preferable to use a substrate in which a gas barrier coat made of a metal layer or the like is formed on the surface in order to suppress oxygen and moisture permeability.
  • the gas barrier coat is formed by a vapor deposition method or the like.
  • FIG. 7 is a cross-sectional view showing a first modification of the photoelectric conversion module of FIG.
  • the photoelectric conversion module of FIG. 7 has a configuration in which a laminated body in which a translucent photoelectric conversion body 3, a translucent recombination layer 4, and an organic photoelectric conversion body 2 are stacked is embedded in a sealing material 6.
  • the configuration of other parts is the same as that of the photoelectric conversion module 10 of FIG.
  • the sealing material 6 needs to cover the laminated body which laminated
  • FIG. 8 is a cross-sectional view showing a second modification of the photoelectric conversion module of FIG.
  • the photoelectric conversion module 10 in FIG. 8 does not have the counter substrate 7, and the configuration of other parts is the same as that of the photoelectric conversion module 10 in FIG.
  • the sealing material 6 it is preferable to use a material in which a gas barrier coat made of a metal layer or the like is formed on the surface in order to suppress oxygen and moisture permeability.
  • the gas barrier coat is formed by a vapor deposition method or the like.
  • the sealing material 6 can also be covered with the back sheet for improving moisture resistance.
  • the stacked photoelectric conversion device of the present embodiment includes a conductive substrate, an organic photoelectric conversion body 2 including an organic semiconductor formed on the conductive substrate, and an electron formed on the organic photoelectric conversion body 2. And a translucent recombination layer 4 that recombines holes, and a translucent photoelectric conversion body 3 formed on the translucent recombination layer 4 (not shown).
  • the conductive substrate is non-translucent, light is incident from the translucent photoelectric conversion body 3 side, so that the thin film type translucent photoelectric conversion body 3 causes short wavelength light (wavelength 300). Is highly photoelectrically converted, and long-wavelength light (wavelength of about 600 to 900 nm) is well photoelectrically converted by the organic photoelectric converter 2, and the conversion efficiency of both the photoelectric converters 2 and 3 is high. can get.
  • the conductive substrate 31 includes a translucent substrate 31a and a translucent conductive layer 31b.
  • resin such as PET (polyethylene terephthalate), PEN (polyethylene naphthalate), polyimide, polycarbonate, inorganic material such as blue plate glass, soda glass, borosilicate glass, ceramics, or conductive resin
  • organic-inorganic hybrid materials are good.
  • a tin-doped indium oxide layer (ITO layer), an impurity-doped indium oxide layer (In 2 O 3 layer), or the like formed by a low-temperature growth sputtering method, a low-temperature spray pyrolysis method, or the like is preferable.
  • a fluorine-doped tin dioxide layer (SnO 2 : F layer) formed by a thermal CVD method, an impurity-doped zinc oxide layer (ZnO layer) formed by a solution growth method, or the like may be used. Further, these layers may be stacked and used.
  • Other methods for forming the translucent conductive layer 31b include a vacuum deposition method, an ion plating method, a dip coating method, and a sol-gel method. Further, if a surface irregularity in the order of the wavelength of incident light is formed on the surface of the translucent conductive layer 31b, a light confinement effect may be obtained.
  • the translucent conductive layer 31b may be a thin (about 1 to 5 nm thick) metal layer made of Au, Pd, Al or the like formed by a vacuum deposition method or a sputtering method.
  • the thickness of the conductive substrate 31 is preferably 0.1 mm to 5 mm, more preferably 0.2 mm to 3 mm. By setting the thickness within the range of 0.1 mm to 5 mm, the mechanical strength of the conductive substrate 31 can be made sufficient, and an increase in weight can be suppressed.
  • the thickness of the translucent conductive layer 31b is preferably 0.001 ⁇ m to 10 ⁇ m, more preferably 0.05 ⁇ m to 2 ⁇ m. By setting the thickness within the range of 0.001 ⁇ m to 10 ⁇ m, the conductivity and light transmittance of the translucent conductive layer 31b can be kept high.
  • the amount of incident light may be increased.
  • the white arrow of FIG. 1 shows incident light.
  • the organic photoelectric converter 2 only needs to generate an internal electric field such as a pin junction type, a pn junction type, a bulk hetero type, or a superlattice type.
  • organic semiconductor material constituting the organic photoelectric conversion body 2 examples include phthalocyanine semiconductors such as phthalocyanine, zinc phthalocyanine, copper phthalocyanine, titanyl phthalocyanine, vanadyl phthalocyanine, hexadecafluorozinc phthalocyanine, chlorophthalocyanine, C60, C70, and fullerene oxide.
  • phthalocyanine semiconductors such as phthalocyanine, zinc phthalocyanine, copper phthalocyanine, titanyl phthalocyanine, vanadyl phthalocyanine, hexadecafluorozinc phthalocyanine, chlorophthalocyanine, C60, C70, and fullerene oxide.
  • PCBM Phenyl C61 butyl acid methyl ester
  • PCBM Phenyl C85 butyl acid methyl ester
  • fullerene semiconductors such as fullerene derivatives, porphyrin semiconductors such as tetramethylporphyrin, bacteriochlorophylls, chlorophylls, pentacene
  • Polyacene semiconductors such as tetracene
  • thiophene semiconductors such as poly-3-hexylthiophene
  • naphthalene semiconductors pyrrole semi Quinone semiconductors such as benzoquinone and naphthoquinone
  • TCNQ semiconductors such as tetracyanoquinodimethane (TCNQ) and tetrafluorotetracyanoquinodimethane
  • perylene semiconductors such as perylene and perylenetetracarboxylic acid, which are amorphous.
  • the material having the above-described composition can also be used as a derivative or a polymer imparted with an electron withdrawing property, electron donating property, stability, and the like by a functional group.
  • the organic photoelectric converter can also be used as a doping or charge transfer complex.
  • tetracyanoquinodimethane can be used as a p-type dopant for metal phthalocyanine, and Mg or tetrafluorotetracyanoquinodimethane (F4-TCNQ) can be used as an n-type dopant.
  • F4-TCNQ tetrafluorotetracyanoquinodimethane
  • F4-TCNQ tetrafluorotetracyanoquinodimethane
  • a charge transfer complex in which tetrathiafuvalene (TTF) is coordinated with TCNQ can be used.
  • TTF tetrathiafuvalene
  • the open band voltage of the organic photoelectric conversion body can be increased by controlling the levels of the conduction band and the valence band by doping.
  • the semiconductor constituting the organic photoelectric converter 2 is a chalcopyrite compound semiconductor, a silicon semiconductor, a group 2-6 semiconductor such as zinc oxide, indium nitride, etc. Or a Group 3-5 semiconductor.
  • chalcopyrite compound semiconductors have long wavelength sensitivity and are suitable as a dye layer.
  • a method of using such an organic semiconductor and an inorganic semiconductor a method of using chalcopyrite compound semiconductor fine particles mixed with a bulk hetero type organic photoelectric converter as a semiconductor dye, a surface having a flat surface or an uneven shape
  • a method of forming a pn interface by coating P3HT (poly-3-hexylthiophene), which is a p-type semiconductor, on the n-type zinc oxide semiconductor, and forming a bulk hetero layer (mixed film of P3HT and PCBM) on the n-type zinc oxide semiconductor A method of coating and exhibiting the function as a hole blocking layer simultaneously with the formation of the pn interface is preferable.
  • inorganic metal oxides such as TiOx, NbOx, ZrOx, TaOx, and WOx can be used as the material that exhibits the function as the hole blocking layer.
  • inorganic metal oxides such as TiOx, NbOx, ZrOx, TaOx, and WOx can be used as the material that exhibits the function as the hole blocking layer.
  • the dye layer shown in FIG. 1 refers to a layer that has a function of photoelectric conversion and can transfer charges to and from a semiconductor layer in contact therewith.
  • the charge refers to a charge generated by the generated exciton by charge separation at the interface between the dye layer and the semiconductor layer, a charge separated by charge inside the dye, or the like.
  • an electron block layer 25 As an example of the pin junction type organic photoelectric converter 2, as shown in FIG. 2, an electron block layer 25, a first conductive type (p type) organic semiconductor layer 24a, and a first conductive type (p type) organic There is a configuration in which a mixed (i-type) layer 23a of a second semiconductor (n-type) organic semiconductor, a second conductive (n-type) organic semiconductor 22a, and a hole blocking layer 21a are sequentially stacked. .
  • an electron block layer 25a As an example of the pn junction type organic photoelectric conversion body 2, as shown in FIG. 3, an electron block layer 25a, a first conductive type (p type) organic semiconductor layer 24b, a second conductive type (n type) organic There is a configuration in which the semiconductor layer 22b and the hole blocking layer 21b are sequentially stacked.
  • the bulk hetero type organic photoelectric converter 2 there is a configuration in which an electron block layer 25b, a bulk hetero layer 26, and a hole block layer 21c are sequentially stacked as shown in FIG.
  • This bulk hetero type can promote the layer separation in the bulk hetero layer 26 and the crystallization of the organic semiconductor by performing an annealing process, and as a result, the conversion efficiency can be improved. Further, the spectral sensitivity can be improved by further mixing the dye into the bulk hetero layer 26.
  • an electron block layer 25b As an example of the superlattice type organic photoelectric converter 2, as shown in FIG. 5, an electron block layer 25b, a first conductive type (p type) organic semiconductor layer 24d, and a second conductive type (n type) organic There is a configuration in which three stacked structure layers in which a pair with the semiconductor layer 22d is stacked and a hole blocking layer 21d are sequentially stacked.
  • the organic photoelectric conversion body 2 is formed by a vacuum deposition method, a spin coating method, a dip coating method, a casting method, a printing method, an ink jet method, a physical vapor deposition method, or the like.
  • the first conductive type (p-type) organic semiconductor layer 24 is preferably made of copper phthalocyanine or the like and has a thickness of about 1 to 200 nm. By setting the thickness within the range of about 1 to 200 nm, the coverage (coverage) of the first conductive type organic semiconductor layer 24 is improved, the charge separation is sufficient, and the increase in series resistance is suppressed. Can do.
  • the dye layer 23 is a layer that does not greatly affect charge separation but increases spectral sensitivity, is made of tin phthalocyanine or the like, and preferably has a thickness of about 0.5 to 50 nm. By setting the thickness within the range of about 0.5 nm to 50 nm, the spectral sensitivity can be increased, and the series resistance can be reduced.
  • the second conductivity type (n-type) organic semiconductor layer 22 is preferably made of fullerene C60 or the like and has a thickness of about 0.5 nm to 200 nm. By setting the thickness within the range of about 0.5 nm to 200 nm, the coverage of the second conductivity type organic semiconductor layer 22 is improved, the charge separation is sufficient, and the increase in series resistance can be suppressed. it can.
  • the hole blocking layer 21 is made of bathocuproine, TiOx (a titanium oxide layer including an amorphous structure), or the like, and preferably has a thickness of about 0.5 nm to 1000 nm. By setting the thickness within the range of about 0.5 nm to 1000 nm, the coverage of the hole blocking layer 21 is improved, charge separation is sufficient, and an increase in series resistance can be suppressed.
  • the electronic block layer 25 is preferably made of PEDOT: PSS or the like and has a thickness of about 1 to 200 nm.
  • the thickness within the range of about 1 to 200 nm, the covering property of the electron blocking layer 25 is improved, charge separation is sufficient, and an increase in series resistance can be suppressed.
  • the first conductivity type (p-type) organic semiconductor layer 24a is preferably made of copper phthalocyanine or the like and has a thickness of about 1 to 200 nm. By setting the thickness within the range of about 1 to 200 nm, the covering property of the first conductive type (p-type) organic semiconductor layer 24a is improved, charge separation is sufficient, and the increase in series resistance is suppressed. be able to.
  • the mixed layer 23a is made of copper phthalocyanine, fullerene C60, or the like, and preferably has a thickness of about 1 to 500 nm. By setting the thickness within the range of about 1 to 500 nm, the spectral sensitivity can be increased and the series resistance can be reduced.
  • the second conductivity type (n-type) organic semiconductor layer 22a is preferably made of fullerene C60 or the like and has a thickness of about 0.5 nm to 200 nm. By setting the thickness within the range of about 0.5 nm to 200 nm, the coverage of the second conductive type (n-type) organic semiconductor layer 22a is improved, charge separation is sufficient, and further, the series resistance is increased. Can be suppressed.
  • the hole blocking layer 21a is made of bathocuproine, TiOx (titanium oxide film including an amorphous structure), or the like, and preferably has a thickness of about 0.5 nm to 1000 nm. By setting the thickness within the range of about 0.5 nm to 1000 nm, the coverage of the hole blocking layer 21a can be improved, and an increase in series resistance can be suppressed.
  • the electronic block layer 25a is preferably made of PEDOT: PSS or the like and has a thickness of about 1 to 200 nm. By setting the thickness within the range of about 1 to 200 nm, the coverage of the electron blocking layer 25a can be improved, and an increase in series resistance can be suppressed.
  • the first conductivity type (p-type) organic semiconductor layer 24b is preferably made of copper phthalocyanine or the like and has a thickness of about 1 to 200 nm. By setting the thickness within the range of about 1 to 200 nm, the covering property of the first conductive type (p-type) organic semiconductor layer 24b is improved, charge separation is sufficient, and the increase in series resistance is suppressed. be able to.
  • the second conductivity type (n-type) organic semiconductor layer 22b is preferably made of fullerene C60 or the like and has a thickness of about 0.5 nm to 200 nm. By setting the thickness within the range of about 0.5 nm to 200 nm, the coverage of the second conductive type (n-type) organic semiconductor layer 22b is improved, charge separation is sufficient, and further, the series resistance is increased. Can be suppressed.
  • the electron block layer 25b is preferably made of PEDOT: PSS or the like and has a thickness of about 1 to 200 nm. By setting the thickness within the range of about 1 to 200 nm, the coverage of the electron blocking layer 25b can be improved, and an increase in series resistance can be suppressed.
  • the bulk hetero layer 26 is made of thiophene derivative P3HT, fullerene derivative PCBM, or the like, and preferably has a thickness of about 1 to 200 nm. By setting the thickness within the range of about 1 to 200 nm, the spectral sensitivity of the bulk hetero layer 26 can be increased, and the series resistance can be reduced.
  • the hole blocking layer 21c is made of bathocuproine, TiOx (titanium oxide layer including an amorphous structure), or the like, and preferably has a thickness of about 0.5 nm to 1000 nm. By setting the thickness within the range of about 0.5 nm to 1000 nm, the coverage of the hole blocking layer 21c can be improved, and an increase in series resistance can be suppressed.
  • the electron block layer 25 is preferably made of PEDOT: PSS or the like and has a thickness of about 1 to 200 nm. By setting the thickness within the range of about 1 to 200 nm, the coverage of the electron blocking layer 25 can be improved, and an increase in series resistance can be suppressed.
  • the first conductivity type (p-type) organic semiconductor layer 24d is made of copper phthalocyanine or the like, and preferably has a thickness of about 1 to 200 nm. By setting the thickness within the range of about 1 to 200 nm, the covering property of the first conductive type (p-type) organic semiconductor layer 24d is improved, charge separation is sufficient, and the increase in series resistance is suppressed. be able to.
  • the second conductivity type (n-type) organic semiconductor layer 22d is made of fullerene C60 or the like, and preferably has a thickness of about 0.5 nm to 200 nm. By setting the thickness within the range of about 0.5 nm to 200 nm, the coverage of the second conductive type (n-type) organic semiconductor layer 22d is improved, charge separation is sufficient, and further, the series resistance is increased. Can be suppressed.
  • the hole blocking layer 21c is made of bathocuproine, TiOx (titanium oxide layer including an amorphous structure), or the like, and preferably has a thickness of about 0.5 nm to 1000 nm. By setting the thickness within the range of about 0.5 nm to 1000 nm, the coverage of the hole blocking layer 21c can be improved, and an increase in series resistance can be suppressed.
  • the translucent recombination layer 4 is a layer for facilitating recombination of electrons and holes between the organic photoelectric conversion body 2 and the translucent photoelectric conversion body 3.
  • the translucent recombination layer 4 is partially formed at the interface between the translucent photoelectric conversion body 3 and the second photoelectric conversion body 2 and has a non-formed part.
  • the ability to suppress recombination at some surface levels of the translucent photoelectric conversion body 3 and the organic photoelectric conversion body 2 is one factor that can increase the photoelectric conversion efficiency of the stacked photoelectric conversion device 1. . This is because part of the surface levels of the translucent photoelectric conversion body 3 and the organic photoelectric conversion body 2 do not come into contact with the translucent recombination layer 4 that is a conductive material. This is because the probability that the holes diffuse is greatly reduced. As a result, the apparent surface state density can be reduced and recombination can be suppressed, so that the photoelectric conversion efficiency of the stacked photoelectric conversion device 1 can be increased.
  • the translucent recombination layer 4 may include at least one of a metal, a conductive oxide, and a conductive polymer. In this case, recombination of electrons and holes is facilitated, and the translucent recombination layer 4 with a small light loss can be obtained.
  • Occupancy ratio of the translucent recombination layer 4 at the interface between the translucent photoelectric converter 3 and the organic photoelectric converter 2 (planar in the direction perpendicular to the translucent photoelectric converter 3 and the organic photoelectric converter 2)
  • the occupation ratio is B / A.
  • the translucent recombination layer 4 is preferably composed of a plurality of conductor portions (hereinafter also referred to as island portions) that are located apart from each other.
  • island portions conductor portions
  • the work function difference between the translucent photoelectric conversion body 3 and the organic photoelectric conversion body 2 is reduced, and the translucent photoelectric conversion body 3 and the organic photoelectric conversion body 2 are reduced. Electron and hole transfer is facilitated.
  • the average diameter of one island-like portion constituting such a translucent recombination layer 4 is preferably 2 nm to 20 nm, and more preferably 2 nm to 4 nm.
  • the translucent recombination layer 4 is composed of a plurality of island-shaped portions, there are gaps between the island-shaped portions, and other layers enter the gap. It can be said that the bonding layer 4 has a layered shape as a whole.
  • the translucent recombination layer 4 preferably has a shape having a plurality of through holes, for example, a mesh shape, a lattice shape, or the like. In this case, there is an advantage that good translucency can be obtained, and there is an advantage that it can be used as a growth nucleus of the organic photoelectric conversion body 2 to be laminated next. Further, the work function difference between the translucent photoelectric conversion body 3 and the organic photoelectric conversion body 2 is reduced, and the electrons and positive electrons between the translucent photoelectric conversion body 3 and the organic photoelectric conversion body 2 are reduced. The movement of the hole becomes easy.
  • the average diameter of the through holes in the translucent recombination layer 4 is preferably 2 nm to 100 ⁇ m, and more preferably 2 nm to 10 nm.
  • the translucent recombination layer 4 is partially formed between the translucent photoelectric conversion body 3 and the organic photoelectric conversion body 2, electron transfer and hole transfer are facilitated. That is, since the surface area is increased by partially forming the translucent recombination layer 4, the surface energy is increased and the catalytic properties are improved, the ratio of steps, kinks, etc. on the surface is increased, This is due to reasons such as an increase in active sites accompanying an increase in surface area. In addition, the ability to suppress recombination at some surface levels of the translucent photoelectric conversion body 3 and the organic photoelectric conversion body 2 is one factor that facilitates electron transfer and hole transfer.
  • the translucent recombination layer 4 is made of a metal
  • the material is made of a platinum group element such as platinum or palladium, or a metal such as silver, aluminum, titanium, iron, copper, indium, chromium, or iridium.
  • the translucent recombination layer 4 is formed by vacuum deposition, sputtering, thermal decomposition of a coated complex, electrodeposition, or the like.
  • the material of the conductive oxide used for the translucent recombination layer 4 includes tin-doped indium oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, zinc oxide, and indium oxide.
  • the translucent recombination layer 4 made of a conductive oxide is formed by sputtering, vapor deposition, chemical vapor deposition, spin coating, plating, or the like.
  • the material of the conductive polymer used for the translucent recombination layer 4 is polyethylene dioxythiophene (PEDOT) (which may be doped with polystyrene sulfonate or toluene sulfonate), polyvinyl carbazole, polythiophene, polypyrrole, or the like. Good. Polyethylene dioxythiophene, polyophene, and polypyrrole are formed by a coating method such as a spin coating method and a cast method, and polyvinylcarbazole and polythiophene are formed by an electrodeposition method.
  • PEDOT polyethylene dioxythiophene
  • Polyethylene dioxythiophene, polyophene, and polypyrrole are formed by a coating method such as a spin coating method and a cast method, and polyvinylcarbazole and polythiophene are formed by an electrodeposition method.
  • At least one of the translucent recombination layers 4 is a catalyst layer.
  • a catalyst layer can reduce the overvoltage that acts on the organic photoelectric conversion body 2 and the translucent photoelectric conversion body 3, so that the overvoltage necessary for charge recombination can be reduced.
  • the catalyst layer may contain at least one of platinum, palladium, nickel, aluminum, and silver from the viewpoint of enhancing the overvoltage reduction action.
  • the translucent recombination layer 4 may be a laminate of a plurality of layers. By laminating a plurality of layers, charge transfer between the organic photoelectric conversion body 2 and the translucent recombination layer 4, and between the translucent recombination layer 4 and the translucent photoelectric conversion body 3, It can be performed more smoothly.
  • the translucent recombination layer 4 comprised in such a multilayer is the 1st catalyst layer which contact
  • the intermediate layer includes the conductive oxides described above. Further, the surface resistivity of the intermediate layer can be measured by, for example, a four probe resistivity measurement method. Further, the catalyst layer may have a shape having an island-shaped portion made of at least one of a metal, a conductive oxide, and a conductive polymer, or may have a shape having a plurality of through holes. Such an intermediate layer is included in either the organic photoelectric conversion body 2 or the translucent photoelectric conversion body 3 and constitutes a part of the photoelectric conversion body.
  • the translucent photoelectric converter 3 is preferably an amorphous semiconductor layer such as a hydrogenated amorphous silicon semiconductor layer having a pin junction structure continuously deposited by plasma CVD.
  • the pin junction structure is a structure in which a p-type semiconductor, an i-type semiconductor, and an n-type semiconductor are sequentially stacked.
  • the translucent photoelectric conversion body 3 has a pin structure including an i-type amorphous silicon layer, the translucent photoelectric conversion body absorbs light having a short wavelength of about 700 nm or less to generate power, and generates about 700 nm. The above long wavelength light is transmitted.
  • the wavelength range of sunlight is 310 nm to 2000 nm
  • the wavelength range with high intensity is 400 nm to 1200 nm. Therefore, by using the organic semiconductor 2 having a sensitivity of 700 nm to 1200 nm or 700 nm to 2000 nm as the organic photoelectric conversion body 2, high photoelectric conversion efficiency can be obtained.
  • the translucent photoelectric conversion body 3 includes, for example, a first conductivity type (n-type) amorphous silicon semiconductor layer 32, an intrinsic type (i-type) amorphous silicon semiconductor layer 33, from the organic photoelectric conversion body 2 side.
  • a pin junction structure in which the second conductivity type (p-type) amorphous silicon semiconductor layers 34 are sequentially stacked is used, but a nip junction structure that is a reverse junction may be used.
  • the translucent photoelectric conversion body 3 is not limited to the above-described amorphous silicon semiconductor layer. If the i-type semiconductor layer is amorphous, at least one of the p-type semiconductor layer and the n-type semiconductor layer has microcrystals. Or a hydrogenated amorphous silicon alloy layer.
  • the p-type semiconductor layer on the light incident side is preferably a hydrogenated amorphous silicon carbide layer, in which case the light transmissivity is high and the light loss is further reduced.
  • the translucent photoelectric conversion body 3 can be formed by a catalytic CVD method or the like. Further, when the plasma CVD method and the catalytic CVD method are combined, photodegradation can be suppressed and reliability can be improved.
  • the first conductive type amorphous silicon semiconductor layer 32, the intrinsic type amorphous silicon semiconductor layer 33, and the second conductive type amorphous silicon semiconductor layer 34 can be continuously deposited under the respective film forming conditions by the CVD method. It can be formed in a short time at a low cost, which is preferable.
  • the thickness of the p-type a-Si: H layer (“a-Si” means amorphous silicon and “: H” means hydrogen dope) that is the second conductivity type amorphous silicon semiconductor layer 34.
  • a-Si means amorphous silicon and “: H” means hydrogen dope
  • the thickness of the i-type a-Si: H layer that is the intrinsic type amorphous silicon semiconductor layer 33 is preferably 500 to 5000 mm, and more preferably 1500 to 2500 mm (0.15 ⁇ m to 0.25 ⁇ m). By setting the thickness within the range of 500 to 5000 mm, a sufficient photocurrent can be obtained and the light transmittance can be improved.
  • the thickness of the n-type a-Si: H layer which is the first conductivity type amorphous silicon semiconductor layer 32 is preferably 50 to 200 mm, more preferably 80 to 120 mm. By setting the thickness within the range of 50 to 200 mm, an internal electric field can be easily formed in the translucent photoelectric conversion body 3, and light quantity loss in the n-type a-Si: H layer can be reduced.
  • the translucent photoelectric conversion body and the organic photoelectric conversion body are laminated, a short wavelength light (wavelength of about 300 to 600 nm) is often obtained with a thin film type translucent photoelectric conversion body.
  • Long-wavelength light (wavelength of about 600 to 900 nm) is well photoelectrically converted by the organic photoelectric conversion body, and high conversion efficiency combining the conversion efficiency of both photoelectric conversion bodies is obtained.
  • long wavelength light transmitted through the thin film translucent photoelectric conversion body can be photoelectrically converted by the organic photoelectric conversion body, and light in a wide wavelength range can be efficiently converted. Good photoelectric conversion.
  • the translucent photoelectric conversion body which absorbs short wavelength light well and transmits most of the long wavelength light is disposed on the light incident side, and the organic photoelectric conversion body is disposed on the rear side.
  • the organic photoelectric converter on the rear side does not directly receive strong light such as sunlight.
  • the organic photoelectric conversion body does not directly receive strong light such as sunlight, and the short wavelength light including ultraviolet rays is drastically reduced by the translucent photoelectric conversion body. It is reduced and high reliability can be obtained.
  • the organic photoelectric conversion body and the translucent photoelectric conversion body can be formed by a low-temperature process with a substrate temperature of about 500 ° C. or less, a stacked configuration that provides high conversion efficiency can be obtained at a conventional level of about 1400 ° C. It can be manufactured more easily and easily than a photoelectric conversion device that requires a high-temperature process at a lower cost.
  • the stacked photoelectric conversion device of the present invention is not limited to the above-described embodiment.
  • the first photoelectric converter may be an organic photoelectric converter
  • the second photoelectric converter may be composed mainly of an inorganic material.
  • both the first photoelectric converter and the second photoelectric converter may be composed of an inorganic material as a main component, or both the first photoelectric converter and the second photoelectric converter are organic.
  • You may comprise a system photoelectric conversion body. As long as the first photoelectric conversion body transmits long wavelength light to the second photoelectric conversion body, the first photoelectric conversion body may have a stacked structure.
  • Example 1 Examples of the stacked photoelectric conversion device of this embodiment will be described below.
  • a stacked photoelectric conversion device 1 having the configuration shown in FIG. 1 was produced as follows.
  • a glass substrate (size 1 cm ⁇ 2 cm, thickness approximately) on which a light-transmitting conductive layer 31 b made of a SnO 2 : F layer (F-doped SnO 2 layer) having a surface resistivity of 10 ⁇ / ⁇ (square) is formed. 0.11 cm), and a thin film type translucent photoelectric conversion body 3 was formed on one main surface thereof.
  • the translucent photoelectric conversion body 3 was formed as follows.
  • An i-type a-Si: H layer as the intrinsic type amorphous silicon semiconductor layer 33 and an n-type a-Si: H layer as the first conductive type amorphous silicon semiconductor layer 32 are successively formed in a vacuum. did.
  • the p-type a-Si: H layer uses SiH 4 gas, H 2 gas, and B 2 H 6 gas (diluted to 500 ppm with H 2 gas) as source gases, and the flow rates of these gases are 3 sccm and 10 sccm, respectively.
  • the thickness was 2 sccm and the thickness was 90 mm (9 nm).
  • the i-type a-Si: H layer was formed using SiH 4 gas and H 2 gas as source gases, the flow rates of these gases being 30 sccm and 80 sccm, respectively, and the thickness being 2000 mm (200 nm).
  • the n-type a-Si: H layer uses SiH 4 gas, H 2 gas, and PH 3 gas (diluted to 1000 ppm with H 2 gas) as source gases, and the flow rates of these gases are 3 sccm, 30 sccm, and 6 sccm, respectively. And a thickness of 100 mm (10 nm).
  • the temperature of the glass substrate during the formation of the p-type a-Si: H layer, i-type a-Si: H layer, and n-type a-Si: H layer was 220 ° C. in all cases.
  • a Pt layer as the translucent recombination layer 4 was formed on the translucent photoelectric conversion body 3 with a thickness of 5 nm by a sputtering method. At this time, the Pt layer had a thickness of about 1 nm and was formed in an island shape.
  • the organic photoelectric conversion body 2 was formed as follows.
  • a two-conductivity (n-type) organic semiconductor layer 22 and a hole blocking layer 21 made of bathocuproine were successively formed in a vacuum.
  • the first conductive type (p-type) organic semiconductor layer 24 made of copper phthalocyanine was heated to 540 ° C. in a quartz crucible in a vacuum deposition apparatus and deposited at a deposition rate of about 0.1 nm per second.
  • the pigment layer 23 made of tin phthalocyanine was heated to 520 ° C. in a quartz crucible in a vacuum deposition apparatus and deposited at a deposition rate of about 0.1 nm per second.
  • the second conductive type (n-type) organic semiconductor layer 22 made of fullerene was heated to 580 ° C. in a quartz crucible in a vacuum vapor deposition apparatus and deposited at a deposition rate of about 0.1 nm per second.
  • the bathocuproine hole blocking layer 21 was heated to 180 ° C. in a pBN crucible in a vacuum deposition apparatus and deposited at a deposition rate of about 0.1 nm per second.
  • the electrode 5 was formed on the organic photoelectric conversion body 2.
  • the electrode 5 was formed as follows using a vacuum evaporation apparatus.
  • the electrode 5 made of silver was formed into a mask in vacuum.
  • the electrode 5 was deposited by heating silver particles on a tantalum boat in a vacuum deposition apparatus.
  • the deposition rate was 0.02 nm per second at the start of deposition, and 0.1 nm per second after forming a thickness of 40 nm.
  • the stacked photoelectric conversion device 1 was produced.
  • the photoelectric conversion characteristics of the obtained laminated photoelectric conversion device 1 having an area of 0.5 cm 2 were evaluated in nitrogen gas.
  • a xenon arc lamp was used as the light source, and the current and the distance from the light source were adjusted so that the amount of light was equivalent to 100 mW / cm 2 under AM 1.5 using a standard cell for evaluating the light intensity.
  • the characteristic of only the translucent photoelectric converter 3 was an open-end voltage of 0.83 V, and the characteristic of only the organic photoelectric converter 2 was an open-end voltage of 0.27 V.
  • an open-end voltage of 1.08 V was obtained, and almost no leakage current was observed.
  • Example 2 A stacked photoelectric conversion device 1 having the configuration of FIG. 2 was produced as follows.
  • a glass substrate size 1 cm ⁇ 2 cm, thickness
  • a thin film type translucent photoelectric conversion body 3 was formed on one main surface thereof.
  • the translucent photoelectric conversion body 3 was formed as follows.
  • An i-type a-Si: H layer as the intrinsic type amorphous silicon semiconductor layer 33 and an n-type a-Si: H layer as the first conductive type amorphous silicon semiconductor layer 32 are successively formed in a vacuum. did.
  • the p-type a-Si: H layer uses SiH 4 gas, H 2 gas, and B 2 H 6 gas (diluted to 500 ppm with H 2 gas) as source gases, and the flow rates of these gases are 3 sccm and 10 sccm, respectively.
  • the thickness was 2 sccm and the thickness was 90 mm (9 nm).
  • the i-type a-Si: H layer was formed using SiH 4 gas and H 2 gas as source gases, the flow rates of these gases being 30 sccm and 80 sccm, respectively, and the thickness being 2000 mm (200 nm).
  • the n-type a-Si: H layer uses SiH 4 gas, H 2 gas, and PH 3 gas (diluted to 1000 ppm with H 2 gas) as source gases, and the flow rates of these gases are 3 sccm, 30 sccm, and 6 sccm, respectively. And a thickness of 100 mm (10 nm).
  • the temperature of the glass substrate during the formation of the p-type a-Si: H layer, i-type a-Si: H layer, and n-type a-Si: H layer was 220 ° C. in all cases.
  • a Pt layer as the translucent recombination layer 4 was formed on the translucent photoelectric conversion body 3 with a thickness of 5 nm by a sputtering method. At this time, the Pt layer had a thickness of about 1 nm and was formed in an island shape.
  • the organic photoelectric conversion body 2 was formed as follows.
  • an electron blocking layer 25 made of polystyrene dioxythiophene (PEDOT: PSS) doped with polystyrene sulfonate dispersed in an aqueous solvent was spin-coated on the translucent recombination layer 4. Dried in air at 110 ° C. to form.
  • PEDOT polystyrene dioxythiophene
  • An n-type organic semiconductor body 22a and a hole blocking layer 21a made of bathocuproine were successively formed in a vacuum.
  • the first conductivity type (p-type) organic semiconductor 24a made of copper phthalocyanine was heated to 540 ° C. in a quartz crucible in a vacuum deposition apparatus and deposited at a deposition rate of about 0.1 nm per second.
  • the pigment layer 23a made of tin phthalocyanine was heated to 520 ° C. in a quartz crucible in a vacuum vapor deposition apparatus and deposited at a deposition rate of about 0.1 nm per second.
  • the second conductive type (n-type) organic semiconductor layer 22a made of fullerene was heated to 580 ° C. in a quartz crucible in a vacuum vapor deposition apparatus and deposited at a deposition rate of about 0.1 nm per second.
  • the hole blocking layer 21a made of bathocuproine was heated to 180 ° C. in a pBN crucible in a vacuum vapor deposition apparatus and deposited at a deposition rate of about 0.1 nm per second.
  • the electrode 5 was formed on the organic photoelectric conversion body 2.
  • the electrode 5 was formed as follows using a vacuum evaporation apparatus.
  • the electrode 5 made of silver was formed into a mask in vacuum.
  • the electrode 5 was deposited by heating silver particles on a tantalum boat in a vacuum deposition apparatus.
  • the deposition rate was 0.02 nm per second at the start of deposition, and 0.1 nm per second after forming a thickness of 40 nm.
  • the stacked photoelectric conversion device 1 was produced.
  • photoelectric conversion characteristics were evaluated in nitrogen gas.
  • a xenon arc lamp was used as the light source, and the current and distance from the light source were adjusted so that the amount of light was equivalent to 100 mW / cm 2 under AM 1.5 using a standard cell for evaluating the light intensity.
  • the characteristic of only the translucent photoelectric converter 3 was an open-end voltage of 0.83 V, and the characteristic of only the organic photoelectric converter 2 was an open-end voltage of 0.27 V.
  • an open circuit voltage of 0.99 V was obtained in the stacked photoelectric conversion device 1 in which the translucent recombination layer 4 is provided between them.
  • the open-circuit voltage was lower than that in Example 1, the short circuit current density was about 1.3 times that of the stacked photoelectric conversion device 1 in Example 1 due to the provision of the electron blocking layer 25.

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Abstract

L'invention porte sur un dispositif stratifié de conversion photoélectrique (1) comprenant : un premier élément de conversion photoélectrique (3) pouvant transmettre la lumière, une couche électriquement conductrice (4) agencée sur une partie du premier élément de conversion photoélectrique (3), et un second élément de conversion photoélectrique (2) agencé sur la couche électriquement conductrice (4).
PCT/JP2009/064269 2009-08-12 2009-08-12 Dispositif stratifié de conversion photoélectrique et module de conversion photoélectrique WO2011018849A1 (fr)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015116200A1 (fr) * 2014-01-31 2015-08-06 Cambrios Technologies Corporation Dispositifs photovoltaïques organiques en tandem qui incluent une couche de recombinaison de nanostructure métallique
EP2826070A4 (fr) * 2012-03-14 2015-11-04 Univ Princeton Hétérojonction silicium/oxyde de titane bloquant les trous pour les dispositifs photovoltaïques au silicium

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004071716A (ja) * 2002-08-02 2004-03-04 Mitsubishi Heavy Ind Ltd タンデム型光起電力素子及びその製造方法
JP2005093631A (ja) * 2003-09-17 2005-04-07 Sanyo Electric Co Ltd 光起電力装置
JP2008147609A (ja) * 2006-12-08 2008-06-26 Kaitokui Denshi Kogyo Kofun Yugenkoshi アモルファスシリコンベースの太陽電池を有する縦列太陽電池

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004071716A (ja) * 2002-08-02 2004-03-04 Mitsubishi Heavy Ind Ltd タンデム型光起電力素子及びその製造方法
JP2005093631A (ja) * 2003-09-17 2005-04-07 Sanyo Electric Co Ltd 光起電力装置
JP2008147609A (ja) * 2006-12-08 2008-06-26 Kaitokui Denshi Kogyo Kofun Yugenkoshi アモルファスシリコンベースの太陽電池を有する縦列太陽電池

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2826070A4 (fr) * 2012-03-14 2015-11-04 Univ Princeton Hétérojonction silicium/oxyde de titane bloquant les trous pour les dispositifs photovoltaïques au silicium
WO2015116200A1 (fr) * 2014-01-31 2015-08-06 Cambrios Technologies Corporation Dispositifs photovoltaïques organiques en tandem qui incluent une couche de recombinaison de nanostructure métallique
TWI624939B (zh) * 2014-01-31 2018-05-21 凱姆控股有限公司 包含金屬奈米結構複合層之串聯式有機光伏打裝置

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