WO2011013928A3 - 태양전지 전극형성용 페이스트 - Google Patents

태양전지 전극형성용 페이스트 Download PDF

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Publication number
WO2011013928A3
WO2011013928A3 PCT/KR2010/004647 KR2010004647W WO2011013928A3 WO 2011013928 A3 WO2011013928 A3 WO 2011013928A3 KR 2010004647 W KR2010004647 W KR 2010004647W WO 2011013928 A3 WO2011013928 A3 WO 2011013928A3
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WO
WIPO (PCT)
Prior art keywords
electrode
solar cell
paste
forming
present
Prior art date
Application number
PCT/KR2010/004647
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English (en)
French (fr)
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WO2011013928A2 (ko
Inventor
황건호
정용준
고민수
정미혜
Original Assignee
주식회사 동진쎄미켐
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 동진쎄미켐 filed Critical 주식회사 동진쎄미켐
Priority to DE112010003118T priority Critical patent/DE112010003118T5/de
Priority to CN2010800330675A priority patent/CN102473741A/zh
Priority to JP2012522749A priority patent/JP2013500572A/ja
Priority to US13/381,214 priority patent/US20120180864A1/en
Publication of WO2011013928A2 publication Critical patent/WO2011013928A2/ko
Publication of WO2011013928A3 publication Critical patent/WO2011013928A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Sustainable Development (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Conductive Materials (AREA)
  • Photovoltaic Devices (AREA)

Abstract

본 발명은 태양전지 전극형성용 페이스트에 관한 것으로서, 본 발명에 따른 태양전지 전극형성용 페이스트는 높은 전기전도도, 낮은 접촉저항, 높은 종횡비, 우수한 보관 안정성 및 우수한 접착력을 나타내며, 태양전지 전극형성시 별도의 소성공정을 거치지 않고, 건조온도에서 경화가 진행되어 전극이 형성되므로 태양전지 전극형성의 생산성이 높다.
PCT/KR2010/004647 2009-07-28 2010-07-16 태양전지 전극형성용 페이스트 WO2011013928A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE112010003118T DE112010003118T5 (de) 2009-07-28 2010-07-16 Paste zur Herstellung einer Solarzellenelektrode
CN2010800330675A CN102473741A (zh) 2009-07-28 2010-07-16 太阳能电池电极形成用糊剂
JP2012522749A JP2013500572A (ja) 2009-07-28 2010-07-16 太陽電池電極形成用ペースト｛ａｐａｓｔｅｃｏｍｐｏｓｉｔｉｏｎｆｏｒｍａｋｉｎｇｅｌｅｃｔｒｏｄｅｏｆｓｏｌａｒ−ｃｅｌｌ｝
US13/381,214 US20120180864A1 (en) 2009-07-28 2010-07-16 Paste for forming of an electrode of a solar cell

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2009-0068733 2009-07-28
KR20090068733 2009-07-28
KR10-2009-0087937 2009-09-17
KR1020090087937A KR100972014B1 (ko) 2009-07-28 2009-09-17 태양전지 전극형성방법

Publications (2)

Publication Number Publication Date
WO2011013928A2 WO2011013928A2 (ko) 2011-02-03
WO2011013928A3 true WO2011013928A3 (ko) 2011-06-16

Family

ID=42645944

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/004647 WO2011013928A2 (ko) 2009-07-28 2010-07-16 태양전지 전극형성용 페이스트

Country Status (7)

Country Link
US (1) US20120180864A1 (ko)
JP (1) JP2013500572A (ko)
KR (1) KR100972014B1 (ko)
CN (1) CN102473741A (ko)
DE (1) DE112010003118T5 (ko)
TW (1) TW201117389A (ko)
WO (1) WO2011013928A2 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101428131B1 (ko) * 2010-10-28 2014-08-07 엘지이노텍 주식회사 전도성 페이스트 조성물
CN103396500B (zh) * 2013-08-07 2016-08-17 中国科学院广州能源研究所 天然高分子衍生物-导电聚合物水性复合粘结剂及其应用
JP6584837B2 (ja) * 2015-06-24 2019-10-02 大研化学工業株式会社 導体用ペースト、セラミック電子部品及び電子部品の製造方法
CN108269645A (zh) * 2017-12-11 2018-07-10 珠海纳金科技有限公司 一种丝印透明导电浆料及其制备方法和应用
CN111145934B (zh) * 2019-12-16 2021-05-14 苏州瑞力博新材科技有限公司 一种可室温存储的异质结（hit）太阳能电池用银浆及制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10261318A (ja) * 1997-03-17 1998-09-29 Toyobo Co Ltd 導電性ペースト
JP2005166502A (ja) * 2003-11-11 2005-06-23 Toppan Forms Co Ltd 導電性ペースト、導電機能部材、印刷回路部材
KR20070075185A (ko) * 2006-01-12 2007-07-18 삼성전자주식회사 반도체 전극 형성용 페이스트 조성물 및 이를 이용한반도체 전극의 제조방법
JP2008097949A (ja) * 2006-10-11 2008-04-24 Japan Aviation Electronics Industry Ltd 導電性ペースト
KR100846306B1 (ko) * 2007-09-06 2008-07-15 주식회사 코나텍 태양전지용 전극 조성물

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0892506A (ja) * 1994-09-26 1996-04-09 Murata Mfg Co Ltd 導電ペースト、電極形成方法、および太陽電池
US6951666B2 (en) * 2001-10-05 2005-10-04 Cabot Corporation Precursor compositions for the deposition of electrically conductive features
EP1734589B1 (en) * 2005-06-16 2019-12-18 Panasonic Intellectual Property Management Co., Ltd. Method for manufacturing photovoltaic module

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10261318A (ja) * 1997-03-17 1998-09-29 Toyobo Co Ltd 導電性ペースト
JP2005166502A (ja) * 2003-11-11 2005-06-23 Toppan Forms Co Ltd 導電性ペースト、導電機能部材、印刷回路部材
KR20070075185A (ko) * 2006-01-12 2007-07-18 삼성전자주식회사 반도체 전극 형성용 페이스트 조성물 및 이를 이용한반도체 전극의 제조방법
JP2008097949A (ja) * 2006-10-11 2008-04-24 Japan Aviation Electronics Industry Ltd 導電性ペースト
KR100846306B1 (ko) * 2007-09-06 2008-07-15 주식회사 코나텍 태양전지용 전극 조성물

Also Published As

Publication number Publication date
CN102473741A (zh) 2012-05-23
WO2011013928A2 (ko) 2011-02-03
KR100972014B1 (ko) 2010-07-22
TW201117389A (en) 2011-05-16
JP2013500572A (ja) 2013-01-07
DE112010003118T5 (de) 2012-10-25
US20120180864A1 (en) 2012-07-19

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