WO2011010877A3 - 금속 배선 형성을 위한 식각액 조성물 - Google Patents

금속 배선 형성을 위한 식각액 조성물 Download PDF

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Publication number
WO2011010877A3
WO2011010877A3 PCT/KR2010/004807 KR2010004807W WO2011010877A3 WO 2011010877 A3 WO2011010877 A3 WO 2011010877A3 KR 2010004807 W KR2010004807 W KR 2010004807W WO 2011010877 A3 WO2011010877 A3 WO 2011010877A3
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WO
WIPO (PCT)
Prior art keywords
etchant composition
formation
metal line
etching
present
Prior art date
Application number
PCT/KR2010/004807
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English (en)
French (fr)
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WO2011010877A2 (ko
Inventor
임민기
양승재
이유진
박영철
권오병
Original Assignee
동우 화인켐 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090066917A external-priority patent/KR101621534B1/ko
Priority claimed from KR1020090077210A external-priority patent/KR101733804B1/ko
Application filed by 동우 화인켐 주식회사 filed Critical 동우 화인켐 주식회사
Priority to CN201080033845.0A priority Critical patent/CN102471686B/zh
Publication of WO2011010877A2 publication Critical patent/WO2011010877A2/ko
Publication of WO2011010877A3 publication Critical patent/WO2011010877A3/ko

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/20—Acidic compositions for etching aluminium or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)

Abstract

본 발명은 금속 배선 형성을 위한 식각액 조성물에 관한 것이다. 상기 식각액 조성물은 티타늄, 티타늄 합금, 알루미늄 및 알루미늄 합금으로 이루어진 군으로부터 선택되는 1종 이상의 금속으로 형성된 단일막 또는 이중막 이상의 다중막을 일괄적으로 습식 식각할 수 있어서 식각 공정의 간소화 및 생산성 향상 효과를 제공한다. 또한, 식각속도가 빠르고, 하부막 및 장비에 대한 손상이 없으며, 균일한 에칭이 가능하여 우수한 식각 특성을 제공하며, 고가의 장비구성이 필요하지 않고 대면적화에 유리하여 매우 경제적인 이점을 제공한다.
PCT/KR2010/004807 2009-07-22 2010-07-22 금속 배선 형성을 위한 식각액 조성물 WO2011010877A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201080033845.0A CN102471686B (zh) 2009-07-22 2010-07-22 用于形成金属线的蚀刻组合物

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020090066917A KR101621534B1 (ko) 2009-07-22 2009-07-22 금속 배선 형성을 위한 식각액 조성물
KR10-2009-0066917 2009-07-22
KR10-2009-0077210 2009-08-20
KR1020090077210A KR101733804B1 (ko) 2009-08-20 2009-08-20 금속 배선 형성을 위한 식각액 조성물

Publications (2)

Publication Number Publication Date
WO2011010877A2 WO2011010877A2 (ko) 2011-01-27
WO2011010877A3 true WO2011010877A3 (ko) 2011-06-03

Family

ID=43499549

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/004807 WO2011010877A2 (ko) 2009-07-22 2010-07-22 금속 배선 형성을 위한 식각액 조성물

Country Status (2)

Country Link
CN (1) CN102471686B (ko)
WO (1) WO2011010877A2 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140086668A (ko) * 2012-12-28 2014-07-08 동우 화인켐 주식회사 금속 산화물막의 식각액 조성물

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060050581A (ko) * 2004-08-25 2006-05-19 삼성전자주식회사 인듐 산화막의 식각액 조성물 및 이를 이용한 식각 방법
KR20060066349A (ko) * 2004-12-13 2006-06-16 동우 화인켐 주식회사 알루미늄, 니켈, 첨가금속으로 구성된 단일금속 합금막식각액 조성물
KR20060094487A (ko) * 2005-02-24 2006-08-29 간또 가가꾸 가부시끼가이샤 티탄, 알루미늄 금속 적층막 에칭액 조성물
KR20070097922A (ko) * 2006-03-30 2007-10-05 동우 화인켐 주식회사 구리계/몰리브덴계 다중막 또는 산화인듐막의 식각 조성물및 이를 이용한 금속막의 식각방법
KR20080045853A (ko) * 2006-11-21 2008-05-26 동우 화인켐 주식회사 액정표시장치용 ｔｆｔ 어레이 기판의 제조방법
KR100839428B1 (ko) * 2007-05-17 2008-06-19 삼성에스디아이 주식회사 식각액, 및 이를 이용한 박막트랜지스터를 갖는 기판의제조 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7253111B2 (en) * 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution
US20060255315A1 (en) * 2004-11-19 2006-11-16 Yellowaga Deborah L Selective removal chemistries for semiconductor applications, methods of production and uses thereof
CN101163776A (zh) * 2004-11-19 2008-04-16 霍尼韦尔国际公司 用于半导体应用的选择性去除化学物质，其制备方法和用途
KR101190907B1 (ko) * 2004-12-07 2012-10-12 가오 가부시키가이샤 박리제 조성물
CN101130870A (zh) * 2006-08-23 2008-02-27 关东化学株式会社 钛、铝金属层叠膜蚀刻液组合物
SG177201A1 (en) * 2006-12-21 2012-01-30 Advanced Tech Materials Compositions and methods for the selective removal of silicon nitride
US20080224092A1 (en) * 2007-03-15 2008-09-18 Samsung Electronics Co., Ltd. Etchant for metal

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060050581A (ko) * 2004-08-25 2006-05-19 삼성전자주식회사 인듐 산화막의 식각액 조성물 및 이를 이용한 식각 방법
KR20060066349A (ko) * 2004-12-13 2006-06-16 동우 화인켐 주식회사 알루미늄, 니켈, 첨가금속으로 구성된 단일금속 합금막식각액 조성물
KR20060094487A (ko) * 2005-02-24 2006-08-29 간또 가가꾸 가부시끼가이샤 티탄, 알루미늄 금속 적층막 에칭액 조성물
KR20070097922A (ko) * 2006-03-30 2007-10-05 동우 화인켐 주식회사 구리계/몰리브덴계 다중막 또는 산화인듐막의 식각 조성물및 이를 이용한 금속막의 식각방법
KR20080045853A (ko) * 2006-11-21 2008-05-26 동우 화인켐 주식회사 액정표시장치용 ｔｆｔ 어레이 기판의 제조방법
KR100839428B1 (ko) * 2007-05-17 2008-06-19 삼성에스디아이 주식회사 식각액, 및 이를 이용한 박막트랜지스터를 갖는 기판의제조 방법

Also Published As

Publication number Publication date
CN102471686A (zh) 2012-05-23
CN102471686B (zh) 2014-08-27
WO2011010877A2 (ko) 2011-01-27

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