WO2011007872A1 - Ｌｅｄチップ接合体の製造方法 - Google Patents

Ｌｅｄチップ接合体の製造方法 Download PDF

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WO2011007872A1
WO2011007872A1 PCT/JP2010/062076 JP2010062076W WO2011007872A1 WO 2011007872 A1 WO2011007872 A1 WO 2011007872A1 JP 2010062076 W JP2010062076 W JP 2010062076W WO 2011007872 A1 WO2011007872 A1 WO 2011007872A1
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led chip
metal
heat spreader
substrate
plate
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PCT/JP2010/062076
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English (en)
French (fr)
Japanese (ja)
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秀樹 広津留
智志 日隈
真也 成田
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電気化学工業株式会社
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Priority to JP2011522870A priority Critical patent/JP5759376B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials

Definitions

  • the present invention relates to a method for manufacturing an LED chip assembly.
  • An LED is an element that emits light when a forward current flows through a pn junction of a semiconductor, and is manufactured using a III-V group semiconductor crystal such as GaAs or GaN.
  • LED devices having excellent conversion efficiency have been developed due to advances in semiconductor epitaxial growth technology and light emitting device process technology, and are widely used in various fields.
  • the LED chip is composed of a p-type layer and an n-type layer obtained by epitaxially growing a group III-V semiconductor crystal on a growth substrate, and a photoactive layer sandwiched between both.
  • a group III-V semiconductor crystal is epitaxially grown on a growth substrate such as single crystal sapphire, and then an electrode or the like is formed to form an LED light emitting element.
  • an object of the present invention is to provide a method for manufacturing an LED chip assembly with significantly improved heat dissipation.
  • the present invention provides an LED chip after mounting one or more LED chips on a metal-impregnated ceramic substrate or metal substrate having a plate thickness of 0.1 to 2 mm and a surface roughness (Ra) of 0.5 ⁇ m or less.
  • the metal-impregnated ceramic substrate or the metal substrate is cut into a width that is at least twice as large as the bottom area of the LED chip (that is, the bonding area between the LED chip and the metal-impregnated ceramic substrate or the metal substrate). It is a manufacturing method of a chip zygote.
  • the metal-impregnated ceramic substrate is made of at least one selected from silicon carbide, aluminum nitride, silicon nitride, diamond and graphite, and has a porosity of 10 to 50% by volume or powder molding
  • the body is impregnated with aluminum or an aluminum alloy by a melt forging method, or impregnated with silicon or a silicon alloy by a melt impregnation method.
  • the metal substrate is made of copper (Cu), nickel ( From a metal plate selected from Ni), molybdenum (Mo), tungsten (W), cobalt (Co), and iron (Fe), an alloy plate containing at least one of the above metal components, or the metal plate and the alloy plate (3) a metal-impregnated ceramic substrate or metal substrate having a thickness of 0.5 to 20 ⁇ m on the surface; Having at least one metal layer selected from Pd, Cu, Ag, Au, Pt and Sn; (4) the LED chip has a non-insulating structure with an output of 0.5 W or more; ) Cutting has at least one embodiment selected from performing at least one method selected from dicing, laser processing, water jet processing, and electric discharge processing; and (6) having an LED chip.
  • the area of the LED impregnated surface of the metal-impregnated ceramic substrate surface or the metal substrate surface is preferably 2 to 100 times the adhesion area with the LED chip.
  • the metal-impregnated ceramic substrate or metal substrate (hereinafter referred to as “heat spreader”) immediately below the LED chip is conductive and has high thermal conductivity, and the difference in linear thermal expansion coefficient from the LED chip. Therefore, it is possible to manufacture an LED chip joined body with greatly improved heat dissipation. As a result, it is possible to provide a high-power LED package that is excellent in heat dissipation and reliability and can be expected to have higher luminance.
  • the LED joined body produced by the present invention has a plate thickness of 0.1 to 2 mm, preferably 0.1 to 0.5 mm, and a surface roughness (Ra) of 0.5 ⁇ m or less, preferably 0.01 to 0.
  • the LED chip is directly mounted on a heat spreader having an area of .2 ⁇ m and more than twice the bottom area of the LED chip, preferably 2 to 100 times, particularly preferably 2 to 25 times.
  • the heat generated in the chip can be efficiently spread in the surface direction, and sufficient heat dissipation characteristics can be ensured even if it is mounted on a circuit board via an insulating layer. As a result, the lighting temperature of the LED chip can be reduced, and further higher brightness of the LED can be realized.
  • the heat spreader is less than twice the bottom area of the LED chip, or if the thickness of the heat spreader is less than 0.1 mm, the heat from the LED chip cannot be sufficiently spread by the heat spreader.
  • the lighting temperature of the LED chip increases.
  • the thickness of the LED chip assembly itself is undesirably large.
  • the plate thickness exceeds 2 mm, the heat resistance of the heat spreader increases.
  • the surface roughness (Ra) of the heat spreader exceeds 0.5 ⁇ m, there is a risk that problems such as a decrease in the adhesion rate with the LED chip may occur.
  • the lower limit is preferably 0.01 ⁇ m.
  • the “adhesion rate” is the ratio of the area of the adhesive layer to the bottom area of the LED chip.
  • the adhesion rate is most preferably 1, more preferably 0.5 or more, and particularly preferably 0.8 or more in terms of heat dissipation characteristics. If the adhesion rate is less than 0.5, the heat generated in the LED chip cannot be sufficiently transmitted to the heat spreader, and the lighting temperature of the LED chip becomes high.
  • a heat spreader made of a metal-impregnated ceramic substrate is made of an inorganic porous body or an inorganic powder molded body having a porosity of 10 to 50% by volume by aluminum or aluminum alloy, preferably an aluminum content of 80 to 97% by mass by a melt forging method.
  • the aluminum-silicon alloy is preferably produced by impregnation by the method of Japanese Patent No. 3468358, for example.
  • the metal-impregnated ceramic substrate has a thermal conductivity of 100 to 600 W / mK, preferably 100 to 300 W / mK at a temperature of 25 ° C., and a linear expansion coefficient of 3 to 12 ⁇ 10 ⁇ at a temperature of 25 ° C. to 150 ° C.
  • the thermal conductivity and the linear expansion coefficient can be increased or decreased depending on the type of impregnated metal, the impregnation rate, the inorganic porous body, or the inorganic powder molded body.
  • silicon or a silicon alloy is applied to an inorganic porous body or an inorganic powder molded body having a porosity of 10 to 50% by volume by a melt impregnation method, for example, by the method of JP-A-5-32458 Even those produced by impregnation can be used.
  • the material of the inorganic porous body or the inorganic powder molded body is preferably at least one inorganic component selected from silicon carbide, aluminum nitride, silicon nitride, diamond and graphite.
  • the ratio of the inorganic component in the inorganic porous body or the inorganic powder molded body is 50 to 90% by volume, particularly 65 to 80% by volume, and the void ratio (porosity) is 10 to 50% by volume, particularly 20 to 35% by volume. It is preferable that When the proportion of the inorganic component is less than 50% by volume, the linear thermal expansion coefficient of the metal-impregnated ceramic substrate becomes too large.
  • the metal cannot be sufficiently impregnated and the thermal conductivity may be too small.
  • the porosity can be adjusted by adjusting the particle size of inorganic components, molding pressure, sintering conditions, and the like.
  • the inorganic powder molded body can be produced by molding only the powder of the inorganic component, or can be produced using an inorganic binder such as silica sol or alumina sol.
  • an inorganic binder such as silica sol or alumina sol.
  • a general ceramic powder forming method such as press forming or cast forming is employed.
  • an inorganic porous body can be manufactured by sintering the said inorganic powder molded object, for example.
  • a metal-impregnated ceramic substrate In order to form a metal-impregnated ceramic substrate from an inorganic porous body or inorganic powder molded body impregnated with metal, cutting and surface processing are usually performed.
  • the shape of the inorganic porous body or inorganic powder molded body impregnated with metal is a columnar shape
  • the outer shape is processed to a predetermined size using a diamond grindstone with a cylindrical grinder, etc. It is preferable to cut to a thickness of about 0.1 to 0.5 mm thicker than the shape.
  • There is no limitation on the cutting method but a multi-wire saw having a small cutting margin and suitable for mass production is preferable.
  • a wire to which an abrasive such as a loose abrasive type and diamond is attached is used.
  • a processing machine such as a double-side grinding machine, a rotary grinding machine, a surface grinding machine, or a lapping machine is used to process the plate thickness to 0.1 to 2 mm and the surface roughness (Ra) to 0.5 ⁇ m or less.
  • a processing machine such as a double-sided grinder, rotary grinder, surface grinder, lapping machine, etc.
  • Surface processing is performed to 2 mm and the surface roughness (Ra) is 0.5 ⁇ m or less, and then outer periphery processing is performed into a predetermined shape by a water jet processing machine, an electric discharge processing machine, a laser processing machine, a dicing machine, a cylindrical grinding machine, or the like.
  • the surface processing may be performed after the outer periphery processing is performed first.
  • the heat spreader made of a metal substrate is a metal plate selected from copper (Cu), nickel (Ni), molybdenum (Mo), tungsten (W), cobalt (Co) and iron (Fe), It is preferable that it is comprised from the laminated plate comprised by the alloy plate containing at least 1 type, or 2 or more types chosen from the said metal plate and the said alloy plate.
  • the shape a flat plate shape, a cylindrical shape, or the like is used.
  • the surface thereof is particularly preferably made of at least one metal selected from Ni, Co, Pd, Cu, Ag, Au, Pt and Sn. It is preferable to have a metal layer having a thickness of 0.5 to 20 ⁇ m made of Ni or Au. A particularly preferred metal layer thickness is 2 to 10 ⁇ m. Thereby, the adhesion rate of the LED chip is improved. If the thickness of the metal layer is less than 0.5 ⁇ m, the effect of improving the adhesion rate is small, and if it exceeds 20 ⁇ m, there is a risk of peeling due to the difference in thermal expansion between the metal layer and the heat spreader.
  • the metal layer can be formed by performing electroless plating or electrolytic plating with the above metal species after washing the heat spreader. It can also be formed by metal vapor deposition or metal coating.
  • the “LED chip” refers to a structure composed of an LED element made of a III-V semiconductor crystal and a holding substrate.
  • a III-V group semiconductor crystal emitting light in the ultraviolet to blue wavelength region is used, and specifically, InGaN, AlGaAs, AlGaInP, or the like.
  • the holding substrate is (a) a growth substrate used when epitaxially growing a group III-V semiconductor crystal, or (b) a group III-V semiconductor crystal is epitaxially grown on a single crystal growth substrate, and then passed through a metal layer.
  • the high thermal conductivity substrate is bonded to the single crystal growth substrate, and then the single crystal growth substrate is removed.
  • Examples thereof are sapphire, silicon carbide, silicon, Cu / W, Cu / Mo, and the like.
  • LED chips that require an output of 0.5 W or more use the holding substrate belonging to (b) above from the viewpoint of thermal conductivity, and the LED chips have a non-insulating structure.
  • the advantage of the non-insulating LED chip is that high brightness can be obtained in a small area.
  • the LED chip and the heat spreader are attached by brazing, soldering, or using a high thermal conductive adhesive.
  • soldering or brazing As the solder, cream solder, eutectic solder, lead-free solder or the like is used.
  • brazing a brazing method using a eutectic metal layer on the back surface of the LED chip is preferable, and the thickness of the bonding layer can be reduced to 1 to 5 ⁇ m.
  • the “high thermal conductive adhesive” refers to an adhesive having a thermal conductivity of 10 W / mK or more, and examples thereof include an Ag paste, a high thermal conductive silicone adhesive, and an Ag-based conductive adhesive. .
  • the thickness of the adhesive layer is preferably 0.1 mm or less, particularly preferably 0.05 mm or less. When the thickness of the adhesive layer exceeds 0.1 mm, the thermal resistance increases.
  • “attachment” means that the LED chip and the heat spreader are bonded, and is used in the same concept as bonding.
  • the number of LED chips mounted on the heat spreader is such that the area of the heat spreader is in the range of twice or more the bottom area of the LED chip and does not hinder the mounting and heat dissipation of the individual LED chips. If so, the number is not limited. For this reason, it can also be set as the LED chip assembly which attached two or more LED chips to one heat spreader. An advantage of mounting two or more LED chips is that man-hours in the mounting process can be reduced.
  • the heat spreader to which the LED chip is mounted is cut into a range in which the area of the heat spreader is twice or more the bottom area of the LED chip. The reason for cutting with such an area ratio is described above.
  • the advantage of the method of cutting after mounting one or more LED chips on the heat spreader is that the cleanliness of the mounting surface when the LED chips are mounted is contaminated with an oxide layer or the like. Therefore, there is no need for a cleaning treatment such as an acid treatment, and the LED chip can be arranged on the heat spreader with high positional accuracy, so that problems during cutting and mounting can be drastically reduced. That is, in general, cutting and mounting are performed by an automatic machine. However, if the positional accuracy is poor, it is difficult to deal with the automatic machine, and it is necessary to perform manual alignment separately. It becomes unnecessary.
  • the heat spreader can be cut by dicing, laser processing, water jet processing, and electric discharge processing. Dicing and laser processing are optimal in terms of processing accuracy and processing speed.
  • Example 1 ⁇ Heat spreader A, B using inorganic porous material> Silicon carbide powder A (commercial product: average particle size 200 ⁇ m) 1800 g, silicon carbide powder B (commercial product: average particle size 20 ⁇ m) 900 g, silicon carbide powder C (commercial product: average particle size 2 ⁇ m) 300 g, and molded binder (methylcellulose) 150 g of trade name “Metroze” manufactured by Shin-Etsu Chemical Co., Ltd.) was weighed and mixed with a stirring mixer for 30 minutes.
  • a linear expansion coefficient measurement specimen (diameter 3 mm, length 10 mm) and a thermal conductivity measurement specimen (25 mm ⁇ 25 mm ⁇ 1 mm) are cut out by grinding, and the temperature is 25 ° C. to 150 ° C.
  • the thermal conductivity at a temperature of 25 ° C. was measured by a laser flash method (ULVAC, Inc .; TC3000).
  • the linear expansion coefficient was 5.0 ⁇ 10 ⁇ 6 / K
  • the thermal conductivity was 250 W / mK.
  • the metal-impregnated ceramic material was processed into a cylindrical shape having a diameter of 50.8 mm and a height of 100 mm using a diamond grinder with a cylindrical grinder, and then a diamond abrasive grain was used with a multi-wire saw, and the cutting speed was 0. It was cut into a disk shape (plate thickness 0.3 mm) at a rate of 0.2 mm / min, and further ground to a plate thickness of 0.22 mm with a double-sided grinder using a # 600 diamond grindstone. After that, polishing is performed to a thickness of 0.2 mm using diamond abrasive grains on a lapping machine, and then ultrasonic cleaning is performed in pure water and then in isopropyl alcohol, followed by drying.
  • Spreader A was manufactured. This surface roughness (Ra) was 0.05 ⁇ m.
  • the heat spreader A was subjected to electroless Ni—P plating and electro Au plating to form a plating layer (5 ⁇ m thickness) of (Ni—P: 4 ⁇ m + Au: 1 ⁇ m).
  • the surface roughness (Ra) was 0.1 ⁇ m.
  • the resist layer (15 ⁇ m thick) is formed at intervals of 4 mm by UV curing.
  • the same procedure was performed except that the four inorganic powder compacts were assembled together with the cylindrical graphite jig produced here.
  • Manufactures a metal-impregnated ceramic material (linear expansion coefficient at a temperature of 25 ° C. to 150 ° C .: 6.0 ⁇ 10 ⁇ 6 / K, thermal conductivity at a temperature of 25 ° C .: 220 W / mK), and processes the heat spreader
  • the heat spreader b was manufactured by applying a plating layer and a resist layer to a and the heat spreader a.
  • each of the four types (A, B, a, b) of heat spreaders 1 manufactured above has an LED chip of 3 W output (manufactured by Cree: EZ1000 / 1 mm ⁇ 1 mm ⁇ 0.1 mm). ) 120 pieces of 4 were bonded on the heat spreader 1 at intervals of 4.0 mm using a positioning jig. Adhesion is performed using a high thermal conductive adhesive (Kyocera Chemical Co., Ltd .: CT284R Ag paste system) in the heat spreaders A and a, and in the heat spreaders B and b, an adhesive layer 5 of cream solder is provided between the resist layers 3.
  • a high thermal conductive adhesive Kelco., Ltd .: CT284R Ag paste system
  • the LED chip assembly is mounted on a metal aluminum-based circuit board (20 mm ⁇ 20 mm ⁇ 1.5 mm) by wire bonding with cream solder and gold wire, and this is a commercially available heat radiation sheet (thermal conductivity of double-sided adhesive made of silicone rubber). 2 W / mK), and bonded to aluminum radiating fins (thermal resistance: 5.2 ° C./W dimensions: 50 mm ⁇ 50 mm ⁇ 17 mm). A voltage with an output of 3 W was applied to the LED chip, and the upper surface temperature of the LED chip was measured by infrared thermography.
  • the upper surface temperature of the LED chip of the LED chip assembly manufactured using the heat spreader A, the heat spreader B, the heat spreader a, and the heat spreader b is an average value of 5 pieces, 69 ° C, 60 ° C, 70 ° C. and 61 ° C.
  • Comparative Example 1 In the LED chip assembly of Example 1 using the heat spreader B, when the LED chip was directly mounted on the circuit board using the cream solder without producing the LED chip assembly, the upper surface temperature of the LED chip was 105. ° C.
  • Examples 11-15 In the case of the heat spreader B of Example 1, except that instead of the plating layer (5 ⁇ m thickness) of (Ni—P: 4 ⁇ m + Au: 1 ⁇ m), a plating layer having the metal type and metal layer thickness shown in Table 2 was formed. The LED chip assembly was manufactured in the same manner as described above, and the upper surface temperature of the LED chip was measured. The results are shown in Table 2.
  • Examples 16 to 22 Comparative Examples 6 to 8 ⁇ LED chip assembly using heat spreaders C and D made of metal substrate> Copper-tungsten having a shape of 50.8 mm ⁇ 10 mm in diameter, a linear expansion coefficient of 6.5 ⁇ 10 ⁇ 6 / K at a temperature of 25 ° C. to 150 ° C., and a thermal conductivity of 160 W / mK at a temperature of 25 ° C.
  • An LED chip assembly was manufactured in the same manner as in the case of the heat spreader B of Example 1 except that these heat spreaders C were used. Table 3 shows the measurement results of the upper surface temperature of the LED chip.
  • Examples 23-25 Except for changing the interval at the time of the cutting process in the dicing apparatus after joining the LED chip of the heat spreader C as shown in Table 3 and manufacturing a heat spreader in which the ratio of the area of the heat spreader to the bottom area of the LED chip is different, An LED chip assembly was manufactured in the same manner as in Example 16, and the upper surface temperature of the LED chip was measured. The results are shown in Table 3.
  • Example 26 Instead of a copper-tungsten (Cu / W) metal substrate, the diameter is 50.8 mm, the plate thickness is 0.3 mm, the surface roughness (Ra) is 0.08 ⁇ m, and the linear expansion coefficient is 25 ° C to 150 ° C.
  • Example 27 ⁇ LED chip assembly by heat spreader c made of metal substrate>
  • the LED chip is bonded to a copper / tungsten (Cu / W) alloy plate having a plate thickness of 0.2 mm and Ra of 0.1 ⁇ m in the same manner as the heat spreader A by using a high thermal conductive adhesive to join the LED chip.
  • the body was manufactured.
  • the upper surface temperature of this LED chip was 71 ° C.
  • Example 28 ⁇ LED chip assembly by heat spreaders E and F using an inorganic porous body> 1300 g of silicon carbide powder D (commercial product: average particle size 150 ⁇ m), 700 g of silicon carbide powder E (commercial product: average particle size 10 ⁇ m), and 300 g of silica sol (Nissan Chemical Co., Ltd .: Snowtex) are weighed and stirred. After mixing for 30 minutes, a molded body was produced by press molding into a plate having dimensions of 160 mm ⁇ 160 mm ⁇ 5 mm at a surface pressure of 30 MPa. The obtained molded body was dried at a temperature of 120 ° C. for 1 hour, and then fired in a nitrogen atmosphere at a temperature of 1400 ° C.
  • Ten inorganic porous bodies are formed as a structure (170 mm ⁇ 170 mm ⁇ 40 mm) with a release plate (160 mm ⁇ 160 mm ⁇ 0.8 mm) coated with a graphite release agent on each sheet, and iron plates ( A plate thickness of 12 mm) was placed and connected with 8 bolts to form a single laminate.
  • a metal-impregnated ceramic material (155 mm ⁇ 155 mm ⁇ 3 mm) was produced in the same manner as in the heat spreader A of Example 1, and the linear expansion coefficient at a temperature of 25 ° C. to 150 ° C. and the thermal conductivity at a temperature of 25 ° C. were measured. However, they were 7.5 ⁇ 10 ⁇ 6 / K and 200 W / mK, respectively.
  • This metal-impregnated ceramic material is surface-processed into a plate shape with a plate thickness of 0.4 mm using a diamond grinder with a surface grinder, and then subjected to a pressure of 250 MPa by a water jet processing machine (Abrasive Jet Cutter NC manufactured by Sugino Machine).
  • the garnet having a particle size of 100 ⁇ m was used as the abrasive grains under the condition of a processing speed of 100 mm / min, and cut into a shape having a diameter of 50.8 mm ⁇ 0.4 mm.
  • Example 29 ⁇ LED chip assembly using heat spreaders G and H using inorganic porous material> A stainless steel plate using an isotropic graphite molded body (manufactured by Tokai Carbon Co., Ltd .: G458, porosity: 13% by volume, dimensions: 100 mm ⁇ 100 mm ⁇ 100 mm) as an inorganic porous body, and a graphite release material applied as a release plate A metal-impregnated ceramic material was produced according to the production of the heat spreader A except that (100 mm ⁇ 100 mm ⁇ 0.8 mm) was used.
  • the outer periphery is processed into a cylindrical shape with a diameter of 50.8 mm ⁇ 100 mm using a diamond grinder with a cylindrical grinder, and further using diamond abrasive grains with a multi-wire saw Then, it was cut into a disc having a thickness of 0.4 mm at a cutting speed of 0.5 mm / min.
  • the obtained disc is ground to a plate thickness of 0.3 mm using a # 600 diamond grindstone with a double-sided grinder, ultrasonically washed in water and then in isopropyl alcohol, and dried.
  • the following heat spreader G was manufactured.
  • the surface roughness (Ra) was 0.15 ⁇ m.
  • the heat spreader G was provided with a plating layer similar to that of the heat spreader B to obtain a heat spreader H.
  • An LED chip with an output of 3 W (EZ1000 / 1 mm ⁇ 1 mm ⁇ 0.1 mm) is joined to the heat spreader H with cream solder at intervals of 4 mm, and then at a cutting speed of 0.5 mm / s with an electric discharge machine. Cutting to a shape of 3.9 mm ⁇ 3.9 mm, ultrasonic cleaning in pure water, drying to produce an LED chip assembly, and measuring the upper surface temperature of the LED chip, it was 66 ° C. It was.
  • Example 30 ⁇ LED chip assembly by heat spreaders I and J using inorganic porous material>
  • a mixed powder of aluminum nitride powder (average particle size 2 ⁇ m) 2880 g, yttria powder (average particle size 1 ⁇ m) 120 g, molding binder (methylcellulose) 150 g, and pure water 150 g was press-molded at a surface pressure of 10 MPa, and further molding pressure 100 MPa.
  • % Inorganic porous material (diameter 52 mm ⁇ 100 mm) was produced.
  • a heat spreader I (diameter 50.8 mm ⁇ 0.2 mm) was produced in the same manner as the heat spreader A of Example 1 except that this inorganic porous material was used and that pure aluminum was used instead of the aluminum alloy. did.
  • the surface roughness (Ra) was 0.06 ⁇ m.
  • the heat spreader I was provided with a plating layer similar to that of the heat spreader B, whereby a heat spreader J was obtained.
  • two LED chips (EZ700 / 0.7 mm ⁇ 0.7 mm ⁇ 0.1 mm) 4 with an output of 1 W are provided on the heat spreader J at intervals of 2 mm on the heat spreader 1. It joined by the adhesive layer 5 of cream solder (refer the process 2 of FIG. 2). Then, it is cut into a shape of 3.9 mm ⁇ 3.9 mm at a cutting speed of 8 mm / s with a laser processing machine, subjected to ultrasonic cleaning in pure water, dried, and 120 LED chip assemblies 6 Was manufactured (see step 3 in FIG. 2).
  • the obtained LED chip assembly has a structure in which four LED chips are mounted on the upper surface of one heat spreader, and the area of the LED chip mounting surface of the LED chip assembly is the bottom area of the LED chip. It was 7.8 times. Moreover, when a voltage was applied to the LED chip so that the output was 4 W and the upper surface temperature of the LED chip was measured, it was 70 ° C.
  • Example 31 ⁇ LED chip assembly using heat spreaders K and L using an inorganic porous material> Cylindrical body as in Example 30 except that a mixture of 2790 g of silicon nitride powder (average particle size 1 ⁇ m), 150 g of yttria powder (average particle size 1 ⁇ m), and 60 g of magnesium oxide powder (average particle size 1 ⁇ m) was used. (Diameter 55 mm ⁇ 110 mm) was produced. This was fired for 4 hours at a temperature of 1880 ° C.
  • the heat spreader I was manufactured by performing the same process as the heat spreader I
  • the heat spreader L was manufactured by performing the same process as the heat spreader J.
  • the heat spreader K had a surface roughness (Ra) of 0.05 ⁇ m.
  • the upper surface temperature of the LED chip of the LED chip assembly manufactured using the heat spreader K was 72 ° C.
  • that manufactured using the heat spreader L was 66 ° C.
  • Example 32 ⁇ LED chip assembly by heat spreader c, d using inorganic powder compact> 7 g of diamond powder A (Diamond Innovations, MBG-600, average particle size: 120 ⁇ m) and 3 g of diamond powder B (Diamond Innovations, MBG-600, average particle size: 15 ⁇ m) in an alumina mortar After mixing for a minute, a graphite jig Y having an outer diameter of 52.4 mm ⁇ 9 mm was inserted into a cylindrical graphite jig X having an outer dimension of 70 mm ⁇ 70 mm ⁇ 20 mm (inner diameter: diameter 52.5 mm ⁇ 20 mm). Thereafter, 10 g of diamond mixed powder was filled, and a graphite jig Y was further inserted on the upper surface of the diamond mixed powder to produce an inorganic powder molded body having a porosity of 35%.
  • diamond powder A Diamond Innovations, MBG-600, average particle size: 120 ⁇ m
  • diamond powder B Diamond Innovations
  • This inorganic powder molded body was made into a laminate in accordance with the manufacture of the heat spreader a and subjected to an impregnation treatment to produce a composite in which a metal-impregnated ceramic material (70 mm ⁇ 70 mm ⁇ 20 mm) was surrounded by a cylindrical graphite jig. This was ground into a plate-like body (70 mm ⁇ 70 mm ⁇ 1 mm) from both main surface sides (70 mm ⁇ 70 mm) using a diamond grindstone with a surface grinder until the metal-impregnated ceramic material was exposed. .
  • the outer periphery was processed into a disc shape (diameter 50.8 mm ⁇ 1 mm) with a water jet processing machine, and the heat spreader c was manufactured.
  • This surface roughness (Ra) was 0.4 ⁇ m.
  • a heat spreader d was manufactured by applying a plating layer and a resist layer in the same manner as the heat spreader b.
  • the heat conductivity of the heat spreader c at a temperature of 25 ° C. was 500 W / mK.
  • the upper surface temperature of the LED chip of the LED chip assembly manufactured using the heat spreader c was 66 ° C.
  • that manufactured using the heat spreader d was 58 ° C.
  • Example 33 A disk having an outer dimension of 52 mm ⁇ 20 mm in diameter using an inorganic porous material (outer dimension: diameter 52 mm ⁇ height 100 mm, porosity 20%) manufactured in the manufacturing process of the heat spreader A of Example 1 at a machining center using a diamond grindstone. It was processed into. This disk and lump silicon were put in a graphite crucible coated with BN powder and set in an electric furnace. The furnace was evacuated and held at 1650 ° C. for 8 hours to impregnate the disc with silicon.
  • the heat spreader M was manufactured by performing the same process as the heat spreader A, and the heat spreader N was manufactured by performing the same process as the heat spreader B.
  • the heat spreader M had a surface roughness (Ra) of 0.08 ⁇ m.
  • the upper surface temperature of the LED chip of the LED chip assembly manufactured using the heat spreader M was 69 ° C., and that manufactured using the heat spreader N was 61 ° C.

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CN105679914A (zh) * 2014-11-21 2016-06-15 程君 一种led复合玻璃基板的制造方法

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JP2007142479A (ja) * 2003-03-14 2007-06-07 Sumitomo Electric Ind Ltd 半導体装置
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JP2007005709A (ja) * 2005-06-27 2007-01-11 Asahi Glass Co Ltd Ｌｅｄ照明装置用の低熱抵抗配線基板およびｌｅｄ照明装置
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CN105679914B (zh) * 2014-11-21 2018-02-23 环视先进数字显示无锡有限公司 一种led复合玻璃基板的制造方法

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