WO2010142683A3 - Verfahren zum bilden von dünnen halbleiterschichtsubstraten sowie verfahren zum herstellen eines halbleiterbauelements, insbesondere einer solarzelle, mit einem solchen halbleiterschichtsubstrat - Google Patents

Verfahren zum bilden von dünnen halbleiterschichtsubstraten sowie verfahren zum herstellen eines halbleiterbauelements, insbesondere einer solarzelle, mit einem solchen halbleiterschichtsubstrat Download PDF

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Publication number
WO2010142683A3
WO2010142683A3 PCT/EP2010/058015 EP2010058015W WO2010142683A3 WO 2010142683 A3 WO2010142683 A3 WO 2010142683A3 EP 2010058015 W EP2010058015 W EP 2010058015W WO 2010142683 A3 WO2010142683 A3 WO 2010142683A3
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WO
WIPO (PCT)
Prior art keywords
semiconductor layer
porous layers
layer substrates
producing
substrates
Prior art date
Application number
PCT/EP2010/058015
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English (en)
French (fr)
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WO2010142683A2 (de
WO2010142683A4 (de
Inventor
Rolf Brendel
Marco Ernst
Heiko Plagwitz
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Institut Für Solarenergieforschung Gmbh
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Application filed by Institut Für Solarenergieforschung Gmbh filed Critical Institut Für Solarenergieforschung Gmbh
Publication of WO2010142683A2 publication Critical patent/WO2010142683A2/de
Publication of WO2010142683A3 publication Critical patent/WO2010142683A3/de
Publication of WO2010142683A4 publication Critical patent/WO2010142683A4/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
    • H01L31/0284—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System comprising porous silicon as part of the active layer(s)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

Es wird ein Verfahren zum Bilden von dünnen Halbleiterschichtsubstraten beschrieben, bei dem in einem bereitgestellten Halbleitersubstrat (1) abwechselnd niedrig-poröse Schichten (33, 37) und hoch-poröse Schichten (35, 39) durch elektrochemisches Ätzen ausgebildet werden können. Der derart entstandene Mehrfachschichtenstapel kann anschließend als Gesamtheit weiteren Prozessierungsschritten unterzogen werden. Beispielsweise kann auf der gesamten Oberfläche der niedrig-porösen Schichten (33, 37) und hoch-porösen Schichten (35, 39) eine passivierende Dielektrikumschicht (45) ausgebildet werden. Anschließend können die niedrig-porösen Schichten nacheinander voneinander mechanisch getrennt werden, wobei die dazwischen liegenden hoch-porösen Schichten jeweils als Sollbruchstelle dienen können. Mit wenigen Prozessschritten lassen sich so eine Vielzahl von dünnen Halbleiterschichtsubstraten in Form von niedrig-porösen Schichten (33, 37) einschließlich einer guten Oberflächenpassivierung sowie einer reflexionsmindernden Oberflächentextur bilden. Die derart erzeugten Halbleiterschichtsubstrate können beispielsweise für die Herstellung von Halbleiterbauelementen wie zum Beispiel dünnen Solarzellen verwendet werden.
PCT/EP2010/058015 2009-06-12 2010-06-08 Verfahren zum bilden von dünnen halbleiterschichtsubstraten sowie verfahren zum herstellen eines halbleiterbauelements, insbesondere einer solarzelle, mit einem solchen halbleiterschichtsubstrat WO2010142683A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009024613.4 2009-06-12
DE102009024613A DE102009024613A1 (de) 2009-06-12 2009-06-12 Verfahren zum Bilden von dünnen Halbleiterschichtsubstraten sowie Verfahren zum Herstellen eines Halbleiterbaulements, insbesondere einer Solarzelle, mit einem solchen Halbleiterschichtsubstrat

Publications (3)

Publication Number Publication Date
WO2010142683A2 WO2010142683A2 (de) 2010-12-16
WO2010142683A3 true WO2010142683A3 (de) 2011-09-29
WO2010142683A4 WO2010142683A4 (de) 2011-11-17

Family

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PCT/EP2010/058015 WO2010142683A2 (de) 2009-06-12 2010-06-08 Verfahren zum bilden von dünnen halbleiterschichtsubstraten sowie verfahren zum herstellen eines halbleiterbauelements, insbesondere einer solarzelle, mit einem solchen halbleiterschichtsubstrat

Country Status (2)

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DE (1) DE102009024613A1 (de)
WO (1) WO2010142683A2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013103495A1 (de) 2013-04-08 2014-10-09 Institut Für Solarenergieforschung Gmbh Verfahren zum Herstellen eines Siliziumsubstrates für die Solarzellenfertigung

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19730975A1 (de) * 1997-06-30 1999-01-07 Max Planck Gesellschaft Verfahren zur Herstellung von schichtartigen Gebilden auf einem Substrat, Substrat sowie mittels des Verfahrens hergestellte Halbleiterbauelemente
DE19851873A1 (de) * 1998-11-10 2000-05-11 Zae Bayern Verfahren zum Aufwachsen einer kristallinen Struktur
DE19936941A1 (de) * 1998-11-11 2000-05-18 Bosch Gmbh Robert Verfahren zur Herstellung dünner Schichten, insbesondere Dünnschichtsolarzellen, auf einem Trägersubstrat
EP1132952A1 (de) * 2000-03-10 2001-09-12 Interuniversitair Micro-Elektronica Centrum Vzw Verfahren zur Herstellung und Abhebung von einer porösen Siliziumschicht
WO2006131177A2 (de) * 2005-06-06 2006-12-14 Universität Stuttgart Verfahren zur herstellung von saatschichten zur abscheidung von halbleitermaterial

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999001893A2 (de) 1997-06-30 1999-01-14 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Verfahren zur herstellung von schichtartigen gebilden auf einem substrat, substrat sowie mittels des verfahrens hergestellte halbleiterbauelemente
DE19940512A1 (de) * 1999-08-26 2001-03-22 Bosch Gmbh Robert Verfahren zur Verkappung eines Bauelementes mit einer Kavernenstruktur und Verfahren zur Herstellung der Kavernenstruktur
DE102006028916B4 (de) * 2006-06-23 2015-07-16 Robert Bosch Gmbh Verfahren zur Herstellung poröser Partikel

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19730975A1 (de) * 1997-06-30 1999-01-07 Max Planck Gesellschaft Verfahren zur Herstellung von schichtartigen Gebilden auf einem Substrat, Substrat sowie mittels des Verfahrens hergestellte Halbleiterbauelemente
DE19851873A1 (de) * 1998-11-10 2000-05-11 Zae Bayern Verfahren zum Aufwachsen einer kristallinen Struktur
DE19936941A1 (de) * 1998-11-11 2000-05-18 Bosch Gmbh Robert Verfahren zur Herstellung dünner Schichten, insbesondere Dünnschichtsolarzellen, auf einem Trägersubstrat
EP1132952A1 (de) * 2000-03-10 2001-09-12 Interuniversitair Micro-Elektronica Centrum Vzw Verfahren zur Herstellung und Abhebung von einer porösen Siliziumschicht
WO2006131177A2 (de) * 2005-06-06 2006-12-14 Universität Stuttgart Verfahren zur herstellung von saatschichten zur abscheidung von halbleitermaterial

Non-Patent Citations (2)

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Title
BANERJEE ET AL: "Modeling and simulation of layer-transferred thin silicon solar cell with quasi monocrystalline porous silicon as active layer", SOLID STATE ELECTRONICS, ELSEVIER SCIENCE PUBLISHERS, BARKING, GB, vol. 49, no. 8, 1 August 2005 (2005-08-01), pages 1282 - 1291, XP005044121, ISSN: 0038-1101, DOI: DOI:10.1016/J.SSE.2005.06.019 *
BRENDEL R: "Thin-film crystalline silicon mini-modules using porous Si for layer transfer", SOLAR ENERGY, PERGAMON PRESS. OXFORD, GB, vol. 77, no. 6, 21 September 2004 (2004-09-21), pages 969 - 982, XP004661837, ISSN: 0038-092X, DOI: DOI:10.1016/J.SOLENER.2004.08.011 *

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Publication number Publication date
DE102009024613A1 (de) 2010-12-23
WO2010142683A2 (de) 2010-12-16
WO2010142683A4 (de) 2011-11-17

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