WO2010137687A1 - Composant pour dispositif de conversion photoélectrique, dispositif de conversion photoélectrique et module de conversion photoélectrique - Google Patents

Composant pour dispositif de conversion photoélectrique, dispositif de conversion photoélectrique et module de conversion photoélectrique Download PDF

Info

Publication number
WO2010137687A1
WO2010137687A1 PCT/JP2010/059082 JP2010059082W WO2010137687A1 WO 2010137687 A1 WO2010137687 A1 WO 2010137687A1 JP 2010059082 W JP2010059082 W JP 2010059082W WO 2010137687 A1 WO2010137687 A1 WO 2010137687A1
Authority
WO
WIPO (PCT)
Prior art keywords
photoelectric conversion
conversion device
extraction electrode
optical member
package
Prior art date
Application number
PCT/JP2010/059082
Other languages
English (en)
Japanese (ja)
Inventor
宏樹 伊藤
植田　義明
Original Assignee
京セラ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京セラ株式会社 filed Critical 京セラ株式会社
Publication of WO2010137687A1 publication Critical patent/WO2010137687A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Definitions

  • the present invention relates to a photoelectric conversion module.
  • photoelectric conversion devices having photoelectric conversion elements
  • a solar cell device that converts solar energy into electric power
  • a concentrating solar cell device is being developed.
  • the concentrating solar cell device has a solar cell element that converts solar energy into electric power.
  • a concentrating photoelectric conversion device is required to have improved environmental resistance for the purpose of improving efficiency related to photoelectric conversion.
  • problems related to environmental resistance there is moisture resistance of a photoelectric conversion device.
  • a photoelectric conversion device includes a base portion and a frame portion provided on the base portion, a first extraction electrode provided from the frame portion to the outside of the frame portion, A ceramic package having a second extraction electrode provided from the inside of the frame portion to the outside of the frame portion with a space from the extraction electrode is provided.
  • the photovoltaic device is provided in the ceramic package, is electrically connected to the first extraction electrode, and is electrically connected to the second extraction electrode.
  • the cover includes a cover provided on the package, and an optical member fixed to the cover and collecting light to the photovoltaic element. The cover has a through hole. The optical member is inserted into the through hole.
  • a photoelectric conversion module includes a photoelectric conversion device and a condensing lens provided on the photoelectric conversion device.
  • a component for a photoelectric conversion device includes a ceramic package including a mounting region for a photoelectric conversion element, a cover provided on the ceramic package, and an optical member fixed to the cover. Yes.
  • the cover has a through hole. The optical member is inserted into the through hole.
  • FIG. 1 shows a photoelectric conversion module according to an embodiment of the present invention.
  • FIG. 2 shows a partially enlarged view of the photoelectric conversion module shown in FIG. 1.
  • the perspective view of the photoelectric conversion apparatus 1 shown by FIG. 2 is shown.
  • the internal structure of the photoelectric conversion apparatus 1 shown by FIG. 3 is shown.
  • the top view of the photoelectric conversion apparatus 1 shown by FIG. 3 is shown.
  • the conceptual diagram of the example photoelectric conversion element 12 is shown.
  • FIG. 4 shows a cross-sectional view of the photoelectric conversion device 1 shown in FIG. 3.
  • 8 shows another exemplary fixing structure of the optical member 14 shown in FIG. 9 shows the optical member 14 and the metal thin film 17 shown in FIG.
  • the light-receiving structure in the photoelectric conversion module shown by FIG. 2 is shown typically.
  • the perspective view of the photoelectric conversion apparatus 1 which concerns on the modification 1 is shown.
  • the sectional view of photoelectric conversion device 1 concerning modification 1 is shown.
  • the light-receiving structure in the photoelectric conversion module which concerns on the modification 1 is shown typically.
  • the sectional view of photoelectric conversion device 1 concerning modification 2 is shown.
  • the top view of the photoelectric conversion apparatus 1 which concerns on the modification 2 is shown.
  • the disassembled perspective view of the package of the photoelectric conversion apparatus 1 which concerns on the modification 2 is shown.
  • 10 is a cross-sectional view illustrating a mounting structure of a photoelectric conversion element of a photoelectric conversion apparatus 1 according to Modification 2.
  • FIG. 10 is a cross-sectional view illustrating a mounting structure of a bypass diode of a photoelectric conversion apparatus 1 according to Modification 2.
  • FIG. 9 shows a cross-sectional view of a photoelectric conversion device 1 according to Modification 3.
  • FIG. 9 shows a cross-sectional view of an optical member of a photoelectric conversion device 1 according to Modification 3.
  • the top view of the photoelectric conversion apparatus 1 which concerns on the modification 4 is shown.
  • a photoelectric conversion module includes a plurality of photoelectric conversion devices 1, a condensing lens 2 provided above the plurality of photoelectric conversion devices 1, and a base body. 3 is included.
  • the condenser lens 2 is shown in a state where it is removed from the base 3 for the purpose of showing the internal structure of the photoelectric conversion module.
  • the plurality of photoelectric conversion devices 1 are mounted on the base 3.
  • the condenser lens 2 is fixed to the base 3 and covers the plurality of photoelectric conversion devices 1.
  • An example of the photoelectric conversion module is a solar cell module. More specifically, the photoelectric conversion module is, for example, a concentrating solar cell module.
  • the photoelectric conversion module includes a plurality of photoelectric conversion devices 1 each having an optical member 14 and a condenser lens 2.
  • An example of the photoelectric conversion module is a solar cell module. More specifically, the photoelectric conversion module is, for example, a concentrating solar cell module.
  • the condensing lens 2 is a primary optical system member.
  • the optical member 14 is a secondary optical system member.
  • one lens of the condenser lens 2 is arranged corresponding to one photoelectric conversion device 1, but the present invention is not limited to this.
  • one lens of the condenser lens 2 may be arranged corresponding to the plurality of photoelectric conversion devices 1.
  • FIG. 1 shows that the photoelectric conversion module is a solar cell module. More specifically, the photoelectric conversion module is, for example, a concentrating solar cell module.
  • the condensing lens 2 is a primary optical system member.
  • the optical member 14 is a secondary optical system member.
  • one lens of the condenser lens 2 is arranged corresponding to one photoelectric
  • the condensing lens 2 is arrange
  • the condenser lens 2 may be replaced with a reflection mirror, a reflection mirror may be disposed below the photoelectric conversion device 1, and light may be reflected by the reflection mirror and collected in the photoelectric conversion device 1.
  • the plurality of photoelectric conversion devices 1 are mounted on an xy plane in a virtual xyz space.
  • the upward direction means the positive direction of the virtual z-axis.
  • each optical axis of the plurality of photoelectric conversion devices 1 is indicated by a one-dot chain line.
  • the condenser lens 2 is shown partially omitted for the purpose of showing the internal structure.
  • the photoelectric conversion device 1 includes a package 11, a photoelectric conversion element 12 that is provided in the package 11 and is a photovoltaic element that converts sunlight into electrical energy, A cover 13 provided on the package 11 and an optical member 14 provided above the photoelectric conversion element 12 are included.
  • the package 11 is shown partially omitted for the purpose of showing the internal structure.
  • the cover 13 is indicated by a dotted line in a transparent state.
  • Package 11 includes a base portion 111 and a frame portion 112 provided on the base portion 111.
  • the package 11 has a cavity portion 115.
  • the package 11 is substantially made of an inorganic material.
  • the exemplary package 11 consists essentially of ceramics. Therefore, the photoelectric conversion device 1 is improved with respect to moisture resistance.
  • the base part 111 of the package 11 has a plurality of conductor patterns 113. As shown in FIG. 5, the plurality of conductor patterns 113 are provided on the bottom surface of the cavity portion 115. In FIG. 5, the cover 13 and the optical member 14 are omitted for the purpose of showing the internal structure.
  • the conductor pattern 113 includes a mounting region 114 for the photoelectric conversion element 12. In FIG. 5, the mounting area 114 is indicated by a one-dot chain line.
  • the frame part 112 of the package 11 has a plurality of positioning markers 116 related to the mounting of the photoelectric conversion element 12.
  • the positioning marker 116 is provided on an extension of the diagonal line in the photoelectric conversion element 12. In FIG. 5, the diagonal line of the photoelectric conversion element 12 and its extension line are shown with the dashed-two dotted line.
  • the photoelectric conversion element 12 is mounted on the conductor pattern 113.
  • the exemplary photoelectric conversion element 12 is a solar cell element including a III-V group compound semiconductor.
  • an exemplary solar cell element has an InGaP / GaAs / Ge 3 junction cell structure.
  • the indium gallium phosphide (InGaP) top cell converts energy contained in a wavelength region of 660 nm or less.
  • the gallium arsenide (GaAs) middle cell converts energy contained in a wavelength region from 660 nm to 890 nm.
  • the germanium (Ge) bottom cell converts light contained in a wavelength region from 890 nm to 2000 nm.
  • the three cells are connected in series via a tunnel junction.
  • the open circuit voltage is the sum of the electromotive voltages of the three cells.
  • the cover 13 is provided on the package 11 and is fixed to the package 11 by the joining member 15.
  • the cover 13 has a through hole 131.
  • the through hole 131 is provided immediately above the photoelectric conversion element 12.
  • the connection location with the optical member 14 of the cover 13 is made into the location lower than the height position of the center of the optical member 14, it is not restricted to this.
  • the connection portion of the cover 13 with the optical member 14 may be positioned around the upper end portion of the optical member 14 by increasing the thickness of the package 11 in the vertical direction. By enlarging the internal space of the package 11, the protection area inside the package 11 can be widened.
  • the cover 13 is substantially made of an inorganic material. Therefore, the photoelectric conversion device 1 is improved with respect to moisture resistance.
  • the cover 13 is substantially made of a metal material or ceramics.
  • the exemplary cover 13 consists essentially of an iron-nickel-cobalt (Fe—Ni—Co) alloy or a nickel iron (Ni—Fe) alloy.
  • the cover 13 is made of a glass material such as borosilicate glass, for example.
  • the joining member 15 is substantially made of an inorganic material. Therefore, the photoelectric conversion device 1 is improved with respect to moisture resistance.
  • the joining member 15 is substantially made of a metal material.
  • An exemplary bonding material 15 is solder. Examples of solders are SnPb, SnAg, SnAgCu, SnAgCu, SnZnBi, SnAgInBi, and SnZnAl.
  • the optical member 14 is provided above the photoelectric conversion element 12 and is inserted into the through hole 131 of the cover 13.
  • An exemplary fixing structure of the optical member 14 is shown in the enlarged view of FIG.
  • the optical member 14 is fixed to the cover 13 by a joining member 16.
  • the joining member 16 is substantially made of an inorganic material. Therefore, the photoelectric conversion device 1 is improved with respect to moisture resistance.
  • the joining member 16 is, for example, low melting point glass. “Low melting glass” refers to glass having a glass transition point of about 600 ° C. or less.
  • the optical member 14 is joined by a joining member 18 containing a metal material.
  • a metal thin film 17 is formed on the side surface of the optical member 14.
  • the joining member 18 is substantially made of an inorganic material. Therefore, the photoelectric conversion device 1 is improved with respect to moisture resistance.
  • the material example of the joining member 18 is a gold tin (AuSn) alloy.
  • the metal thin film 17 is formed on the side surface of the optical member 14 over the circumference in a portion joined to the cover 13.
  • An exemplary method for forming the metal thin film 17 is vapor deposition.
  • the optical member 14 has translucency and has a function of guiding light that has arrived from the condenser lens 2 to the photoelectric conversion element 12.
  • the optical member 14 can collect light toward the mounting region of the photoelectric conversion element 12 and is arranged to collect a large amount of light on the light receiving surface of the photoelectric conversion element 12 mounted in the mounting region.
  • Translucency of the optical member 14 means that light included in at least a part of the wavelength region of sunlight can be transmitted.
  • the optical member 14 is substantially made of an inorganic material. Therefore, the photoelectric conversion device 1 is improved with respect to moisture resistance.
  • An example of the material of the optical member 14 is optical glass. Exemplary optical glasses include borosilicate glass.
  • the photoelectric conversion device 1 is improved in terms of moisture resistance by having the optical member 14 substantially made of borosilicate glass.
  • the exemplary optical member 14 is a prism.
  • the optical member 14 has a pyramid shape in which the cross-sectional area decreases from the upper end toward the lower end.
  • the light reaching the optical member 14 from the condenser lens 2 is repeatedly totally reflected at the interface between the inside and the outside of the optical member 14.
  • the optical member 14 has a function of equalizing the intensity distribution of light energy in the cross-sectional area by total reflection of light.
  • the photoelectric conversion device 1 is improved in terms of environmental resistance because the photoelectric conversion element 12 is enclosed by the package 11, the cover 13, and the optical member 14. In particular, the photoelectric conversion device 1 is improved in terms of moisture resistance because the photoelectric conversion element 12 is hermetically sealed.
  • the photoelectric conversion device 1 in the present embodiment has the photoelectric conversion element sealed with a resin. Compared to the structure, the moisture resistance is improved.
  • An exemplary state of the interior space is a void.
  • Another exemplary state of the interior space is a vacuum state or a state filled with gas.
  • the temperature increases or decreases under the influence of the temperature of the outside air. If the internal space of the package 11 is filled with the resin, the resin undergoes thermal expansion / contraction, and the deterioration of the resin due to heat proceeds. Then, the resin may be peeled inside the package 11 and the package 11 may be cracked. As a result, it becomes difficult to maintain the sealing property of the internal space of the package 11, the photoelectric conversion element 12 is corroded, and the photoelectric conversion efficiency is lowered. According to this embodiment, since the resin is not filled in the internal space of the package 11, the package 11 is not broken by the resin, and the sealing performance of the package 11 can be improved.
  • the second optical member 2 has a plurality of lens portions 21 corresponding to the plurality of optical members 14.
  • Each of the plurality of lens portions 21 is a Fresnel lens having a dome shape.
  • Each of the plurality of lens portions 21 has a function of collecting light on the corresponding optical member 14.
  • the material example of the optical member 14 is glass.
  • the light receiving structure in the photoelectric conversion module of the present embodiment will be described with reference to FIG. In FIG. 10, how the light travels is schematically shown by arrows.
  • the light 91 incident on the lens portion 21 is collected at the upper end of the optical member 14.
  • the light 92 incident on the optical member 14 travels downward while repeating total reflection at the interface between the inside and the outside of the optical member 14.
  • the light 92 is incident on the upper surface of the photoelectric conversion element 12 from the lower end portion of the optical member 14.
  • the photoelectric conversion element 12 converts light energy into electric power.
  • the photoelectric conversion module in this embodiment can maintain the sealing performance inside the photoelectric conversion device 1 satisfactorily by making the package 11 a ceramic package, and has improved humidity resistance. Deterioration in the internal configuration of the photoelectric conversion device 1 such as the conversion element 12 is reduced. Therefore, the photoelectric conversion module in the present embodiment is improved with respect to the efficiency of photoelectric conversion.
  • the photoelectric conversion device 1 includes a package 11, a submount substrate 12 ⁇ / b> X and a photoelectric conversion element 12 provided in the package 11, and the package 11. And a cover 13 provided on the housing.
  • the package 11 is shown partially omitted for the purpose of showing the internal structure.
  • the cover 13 is omitted for the same purpose.
  • the package 11 includes a base part 111, a frame part 112 provided on the base part 111, a metal member 1131 embedded in the base part 111, and a plurality of lead terminals 1141.
  • the package 11 has a cavity portion 115.
  • the base portion 111 and the frame 112 portion are substantially made of an insulating material.
  • An example of the insulating material is ceramics.
  • the photoelectric conversion device 1 is improved with respect to heat dissipation.
  • the metal member 1131 is fixed to the base portion 111.
  • the lower surface of the metal member 1131 has a larger area than the upper surface of the metal member 1131.
  • the size of the base part 111 is larger than the lower surface of the metal member 1131.
  • An example of the material of the metal member 1131 is copper (Cu). Since the photoelectric conversion device 1 includes the metal member 1131 embedded in the base portion 111, heat dissipation is improved.
  • each of the plurality of lead terminals 1141 is located inside the frame portion 112.
  • An inner end portion of the lead terminal 1141 is provided on the base portion 111.
  • the outer end portion of each of the plurality of lead terminals is located outside the frame portion 112.
  • the submount substrate 12X is provided on the metal member 1131 and joined to the metal member 1131.
  • the submount substrate 12X has a conductor pattern 121.
  • the conductor pattern 121 is electrically connected to the lead terminal 1141 by a bonding wire.
  • the submount substrate 12X has a mounting region for the photoelectric conversion elements 12.
  • a material example of the submount substrate 12X is ceramics. Since the photoelectric conversion device 1 has the submount substrate 12X provided on the metal member 1131, heat dissipation is improved.
  • the photoelectric conversion element 12 is mounted on the submount substrate 12X and is electrically connected to the conductor pattern 121.
  • the photoelectric conversion element 12 is electrically connected to the lead terminal 1141 by a bonding wire.
  • the light receiving structure in the photoelectric conversion module of Modification 1 will be described with reference to FIG. In FIG. 13, how the light travels is schematically shown by arrows.
  • the light 91 incident on the lens portion 21 is collected at the upper end portion of the photoelectric conversion device 1.
  • the light 91 is incident on the upper surface of the photoelectric conversion element 12.
  • the photoelectric conversion element 12 converts light energy into electric power.
  • the photoelectric conversion module in Modification 1 is improved with respect to the efficiency of photoelectric conversion in, for example, the photoelectric conversion element 12 by improving heat dissipation. Therefore, the photoelectric conversion module in Modification 1 is improved with respect to the efficiency of photoelectric conversion.
  • the heat conduction path is indicated by arrows.
  • the heat generated by the photoelectric conversion element 12 is conducted to the metal member 1131 through the submount substrate 12X.
  • the heat conducted to the metal member 1131 is conducted to the base 3 shown in FIG. 1, for example.
  • the photoelectric conversion module is a concentrating solar cell module, since sunlight is collected by the optical member 2, for example, heat may be generated in the photoelectric conversion element 12.
  • the efficiency of photoelectric conversion may decrease as the temperature rises.
  • the photoelectric conversion module according to Modification 1 has a heat conduction path from the photoelectric conversion element 12, thereby improving the photoelectric conversion efficiency.
  • the photoelectric conversion module in Modification 1 can suppress the temperature inside the photoelectric conversion device 1 from rising by embedding a metal member having excellent heat dissipation in the package 11. Can be improved. Therefore, the photoelectric conversion module in the modification 1 can contribute to improvement of environmental resistance.
  • the photoelectric conversion device 1 As illustrated in FIG. 14, the photoelectric conversion device 1 according to Modification 2 includes a package 11, a photoelectric conversion element 12 mounted on the package 11, a cover 13 provided on the package 11, and a photoelectric conversion device. And an optical member 14 provided above the conversion element 12. As shown in FIG. 15, the photoelectric conversion device 1 further includes a bypass diode 152 mounted on the package 11.
  • Package 11 includes a base portion 111 and a frame portion 112 provided on the base portion 111.
  • the package 11 includes a first extraction electrode 1132 provided on the upper end portion of the frame portion 112 and a second extraction electrode 1142 provided on the upper surface of the base portion 111.
  • the first extraction electrode 1132 includes a conductor pattern 1152 and a first lead terminal 1162.
  • the first extraction electrode 1132 has an inner end located inside the package 11 and an outer end located outside the package 11.
  • the conductor pattern 1152 is entirely formed on the upper surface of the frame portion 112 and surrounds the cavity region.
  • the conductor pattern 1152 is indicated by a dot pattern.
  • the package 11 is shown in a disassembled state for the purpose of showing the overall configuration.
  • the exemplary conductor pattern 1152 is a metallized layer fired together with the frame part 112.
  • the conductor pattern 1152 contains tungsten (W) or molybdenum (Mo).
  • the first lead terminal 1162 has a ring portion 1172 and a terminal portion 1182.
  • the first lead terminal 1162 is joined to the conductor pattern 1152 at the ring portion 1172.
  • the area of the opening of the ring portion 1172 is larger than the area of the opening of the conductor pattern 1152.
  • the inner peripheral position of the ring portion 1172 in the conductor pattern 1152 is indicated by a broken line.
  • the exemplary first lead terminal 1162 includes copper.
  • the exemplary first lead terminal 1162 is substantially made of oxygen-free copper.
  • Another exemplary first lead terminal 1162 consists essentially of an iron-nickel-cobalt (Fe—Ni—Co) alloy.
  • the second extraction electrode 1142 is provided in a region surrounded by the frame portion 112 in the base portion 111.
  • the second extraction electrode 1142 is a second lead terminal.
  • the second lead terminal 1141 is provided between the base part 111 and the frame part 112, and is joined to the base part 111 and the frame part 112.
  • the exemplary second lead terminal 1141 includes copper.
  • the exemplary second lead terminal 1141 is substantially made of oxygen-free copper.
  • Another exemplary second lead terminal 1141 consists essentially of an iron-nickel-cobalt (Fe—Ni—Co) alloy.
  • the photoelectric conversion element 12 has an upper end portion including the first electrode 121 and a lower end portion including the second electrode 122.
  • the first electrode 121 is electrically connected to the first extraction electrode 1132. More specifically, the first electrode 121 is electrically connected to the conductor pattern 1152 through a bonding wire. The bonding wire is connected to the inner end of the first extraction electrode 1132.
  • the second electrode 122 is bonded to the second lead terminal 1141 and is electrically connected to the second lead terminal 1141.
  • the photoelectric conversion element 12 provided on the second lead terminal 1141 is electrically connected to the first extraction electrode 1132 provided at a position corresponding to the height of the photoelectric conversion element 12,
  • the photoelectric conversion device 1 is improved with respect to the reliability of mounting the photoelectric conversion element 12. More specifically, since the conductor pattern 1152 is provided at a height position corresponding to the first electrode 121 of the photoelectric conversion element 12, the photoelectric conversion device 1 relates to the reliability in wire bonding of the photoelectric conversion element 12. It has been improved.
  • the bypass diode 152 is accommodated in the cavity of the package 11 and is provided on the second lead terminal 1141. As shown in FIG. 18, the bypass diode 152 has an upper end including the first electrode 1512 and a lower end including the second electrode 1522.
  • the first electrode 1512 is electrically connected to the first extraction electrode 1132. More specifically, the first electrode 1512 is electrically connected to the conductor pattern 1152 through a bonding wire. The bonding wire is connected to the inner end of the first extraction electrode 1132.
  • the second electrode 1522 is bonded to the second lead terminal 1141 and is electrically connected to the second lead terminal 1141.
  • the photoelectric conversion module is improved in terms of productivity because the outer end portion of the first extraction electrode 1132 and the outer end portion of the second extraction electrode 1142 are arranged in opposite directions with respect to the photoelectric conversion element 12. Has been. More specifically, the photoelectric conversion module in Modification 2 is improved with respect to the connection structure of the plurality of photoelectric conversion devices 1.
  • first extraction electrode 1132 and the second extraction electrode 1142 “arranged in the reverse direction” means that, for example, in FIG. 15, the first extraction electrode 1132 is in the positive direction of the virtual x axis with respect to the photoelectric conversion element 12.
  • the photoelectric conversion module is improved in terms of productivity because the outer end portion of the first extraction electrode 1132 and the outer end portion of the second extraction electrode 1142 are provided at different height positions. Has been. More specifically, the photoelectric conversion module in Modification 2 is improved with respect to the connection structure of the plurality of photoelectric conversion devices 1.
  • “provided at different height positions” means that the outer end portion of the first extraction electrode 1132 in FIG. And the outer end of the second extraction electrode 1142 are provided at different positions in the virtual z-axis direction.
  • the photoelectric conversion module of Modification 2 includes a plurality of photoelectric conversion devices 1 connected in series. In each of the plurality of photoelectric conversion devices 1, the photoelectric conversion element 12 and the bypass diode 152 are connected in parallel.
  • the bypass diode 152 is an electrical device that avoids the photoelectric conversion element 12 that does not generate output when a failure occurs in a part of the plurality of photoelectric conversion elements 12 or when output is not generated due to blocking of incident light. It forms a simple path.
  • the photoelectric conversion module in Modification 2 is improved with respect to the connection structure of the plurality of photoelectric conversion devices 1 when, for example, the plurality of photoelectric conversion devices 1 are connected in series.
  • the photoelectric conversion module in the modification 2 can maintain the connection state of the some photoelectric conversion apparatus 1 favorably by improving the connection structure of the photoelectric conversion apparatus 1, and improves the connection reliability of the photoelectric conversion apparatus 1. Can be made. Therefore, the photoelectric conversion module in Modification 2 can contribute to improvement of environmental resistance.
  • the package 11 includes the base portion 111 and the frame portion 112 provided on the base portion 111, but is not limited thereto.
  • the base unit 111 may be separate from the package 11 and the package 11 may be configured by the frame unit 112.
  • the first extraction electrode 1132 and the second extraction electrode 1142 have outer end portions, but one has an outer end portion and the other does not have an outer end portion. It may be a structure.
  • the first extraction electrode 1132 has an outer end, and the second extraction electrode 1142 does not have an outer end.
  • Modification 3 Of the photoelectric conversion device according to Modification 3, the same parts as those of the photoelectric conversion device according to the present embodiment or the photoelectric conversion devices according to Modifications 1 and 2 are denoted by the same reference numerals, and description thereof is omitted as appropriate.
  • the optical member 14 is provided above the photoelectric conversion element 12 and includes a first condenser prism 41 and a second condenser prism 42.
  • the first condensing prism 41 and the second condensing prism 42 have a pyramid shape in which the cross-sectional area decreases from the upper end toward the lower end.
  • the 1st condensing prism 41 may be not a taper shape but a plate body, when thickness is set thin.
  • the first condenser prism 41 is provided in the through hole of the cover 13 and is joined to the cover 13 by a joining member made of an inorganic material. Therefore, the photoelectric conversion module is improved with respect to environmental resistance.
  • An exemplary joining member consists essentially of a gold tin (AuSn) alloy.
  • Another exemplary joining member consists essentially of low melting glass. “Low melting glass” refers to glass having a glass transition point of about 600 ° C. or less.
  • the first condensing prism 41 includes a lens portion 411 having a light transmitting property and a reflective layer 412.
  • Translucency of the lens portion 411 means that light converted by the photoelectric conversion element 12 can be transmitted.
  • “translucency” means that at least part of the wavelength of sunlight can be transmitted.
  • An example of the material of the lens portion 411 is optical glass. Exemplary optical glasses include borosilicate glass. The photoelectric conversion module is improved in terms of environmental resistance by having the lens portion 411 substantially made of borosilicate glass.
  • the reflection layer 412 is formed on the side surface of the lens portion 411 over the entire circumference at the portion joined to the cover 13.
  • An example of the reflective layer 412 is a layer substantially made of metal.
  • An exemplary method for forming the reflective layer 412 is vapor deposition.
  • Another example of the reflective layer 412 is a layer substantially made of a dielectric.
  • More specifically, another example of the reflective layer 412 is a dielectric multilayer film.
  • the dielectric multilayer film is formed by alternately laminating a plurality of dielectric layers having different light refractive indexes, and causes total reflection of light due to the difference in the refractive index of light.
  • the light is repeatedly totally reflected at the reflection layer 412.
  • the first condenser prism 41 has a function of equalizing the intensity distribution of light energy in the cross-sectional area by reflecting light.
  • the second condenser prism 42 is provided on the first condenser prism 41, and has translucency.
  • the “translucency” of the second condensing prism 42 means that the light whose energy is converted by the photoelectric conversion element 12 can be transmitted.
  • “translucency” means that at least part of the wavelength of sunlight can be transmitted.
  • the material example of the 2nd condensing prism 42 is optical glass. Exemplary optical glasses include borosilicate glass.
  • the photoelectric conversion module has the second light collecting prism 42 substantially made of borosilicate glass, thereby improving the environmental resistance.
  • the light is repeatedly totally reflected at the interface between the inside and the outside of the second condenser prism 42.
  • the second condenser prism 42 has a function of equalizing the intensity distribution of light energy in the cross-sectional area by total reflection of light.
  • the condensing lens is a primary optical system member
  • the second condensing prism 42 is a secondary optical system member
  • the first condensing prism 41 is a tertiary optical system member.
  • the first condenser prism 41 and the second condenser prism 42 have a function of guiding the light collected by the condenser lens to the photoelectric conversion element 12.
  • the photoelectric conversion module according to Modification 3 includes a first condensing prism 41 that constitutes a structure for hermetically sealing the cavity 115, and a second condensing prism 41 provided separately from the first condensing prism 41.
  • a first condensing prism 41 that constitutes a structure for hermetically sealing the cavity 115
  • a second condensing prism 41 provided separately from the first condensing prism 41.
  • the photoelectric conversion module according to Modification 3 includes a first light collecting prism 41 and a second light collecting prism 42 provided separately from the first light collecting prism 41, thereby providing a photoelectric conversion element. 12 hermetic seals and productivity improvements.
  • the photoelectric conversion module according to Modification 3 includes a first light collecting prism 41 and a second light collecting prism 42 provided separately from the first light collecting prism 41, thereby providing a photoelectric conversion element. It is improved with respect to 12 hermetic seals and with respect to the degree of freedom of selection of the second condenser prism 42.
  • the photoelectric conversion module in Modification 3 the deterioration in the internal configuration of the photoelectric conversion device 1 such as the photoelectric conversion element 12 is reduced by hermetically sealing the photoelectric conversion element 12. Therefore, the photoelectric conversion module in the modification 3 can contribute to improvement of environmental resistance.
  • Modification 4 >> Among the photoelectric conversion devices according to the modification example 4, the same parts as those of the photoelectric conversion device according to the present embodiment or the photoelectric conversion devices according to the modification examples 1, 2, and 3 are denoted by the same reference numerals, and description thereof is omitted as appropriate. To do.
  • the photoelectric conversion element 12 is mounted on the mounting region 114 of the package 11 in a plan view.
  • the cover 13 is omitted for the purpose of showing the internal structure.
  • the package 11 has a peripheral region 114X surrounding the mounting region 114 and a plurality of alignment marks 116a to 116d provided in the peripheral region 114X.
  • the optical member 14 is indicated by a broken line.
  • the optical member 14 has a lower surface edge 14L and an upper surface edge 14U.
  • the lower surface edge 14L and the upper surface edge 14U have a rectangular shape.
  • the lower edge 14L is located inside the upper edge of the photoelectric conversion element 12. Therefore, the photoelectric conversion device 1 is improved with respect to the efficiency of energy conversion of light emitted from the optical member 14 to the photoelectric conversion element 12.
  • the upper surface edge 14 ⁇ / b> U is located outside the upper surface edge of the photoelectric conversion element 12. Therefore, the photoelectric conversion device 1 is improved with respect to the light collection efficiency with respect to the photoelectric conversion element 12.
  • the rectangular upper surface corner 12 a of the photoelectric conversion element 12 is positioned on a line segment connecting the alignment mark 116 a and the rectangular lower surface corner 142 a of the optical member 14. Therefore, the photoelectric conversion device 1 is improved with respect to the light receiving efficiency of the photoelectric conversion element 12.
  • the rectangular upper surface corner 12b of the photoelectric conversion element 12 is positioned on a line segment connecting the alignment mark 116b and the rectangular lower surface corner 142b of the optical member 14.
  • the rectangular upper surface corner 12c of the photoelectric conversion element 12 is located on a line segment connecting the alignment mark 116c and the rectangular lower surface corner 142c of the optical member 14.
  • a rectangular upper surface corner 12d of the photoelectric conversion element 12 is positioned on a line segment connecting the alignment mark 116d and the rectangular lower surface corner 142d of the optical member 14.
  • the plurality of alignment marks 116a to 116d are provided so as to correspond to the four corners 114a to 114d of the rectangular mounting region 114. Therefore, the photoelectric conversion device 1 is improved with respect to the efficiency of energy conversion in the photoelectric conversion element 12 by improving the accuracy of arrangement of the optical member 14.
  • the lower surface of the optical member is included in the range defined by the plurality of alignment marks 116a to 116d. Therefore, the photoelectric conversion device 1 is improved with respect to the efficiency of energy conversion in the photoelectric conversion element 12 by improving the accuracy in positioning of the optical member 14.
  • the photoelectric conversion module in Modification 4 can hermetically seal the inside of the photoelectric conversion device by improving the positioning accuracy of the optical member. For example, deterioration in the internal configuration of the photoelectric conversion device 1 such as the photoelectric conversion element 12 Has been reduced. Therefore, the photoelectric conversion module in the modification 4 can contribute to improvement of environmental resistance.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention porte sur un dispositif de conversion photoélectrique (1) qui comprend un boîtier en céramique (11) comprenant : une première électrode d'extraction, qui comprend une section base (111) et une section cadre (112) installée sur la section base (111) et est installée de l'intérieur de la section cadre (112) à l'extérieur de la section cadre (112) ; et une seconde électrode d'extraction installée dans la section cadre. Le dispositif de conversion photoélectrique comprend également un élément photovoltaïque (12), qui est installé dans un boîtier en céramique (11), est électriquement connecté à la première électrode d'extraction, est électriquement connecté à la seconde électrode d'extraction. En outre, le dispositif de conversion photoélectrique comprend un couvercle (13) installé sur le boîtier (11), et un élément optique (14) qui est fixé sur le couvercle (13) et collecte de la lumière vers l'élément de conversion photovoltaïque. Le couvercle (13) comprend un trou traversant. L'élément optique (14) est introduit dans le trou traversant.
PCT/JP2010/059082 2009-05-28 2010-05-28 Composant pour dispositif de conversion photoélectrique, dispositif de conversion photoélectrique et module de conversion photoélectrique WO2010137687A1 (fr)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP2009128837 2009-05-28
JP2009128836 2009-05-28
JP2009-128837 2009-05-28
JP2009-128836 2009-05-28
JP2009-151358 2009-06-25
JP2009151358 2009-06-25
JP2009159228 2009-07-03
JP2009-159228 2009-07-03
JP2009-177629 2009-07-30
JP2009177629 2009-07-30

Publications (1)

Publication Number Publication Date
WO2010137687A1 true WO2010137687A1 (fr) 2010-12-02

Family

ID=43222792

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2010/059082 WO2010137687A1 (fr) 2009-05-28 2010-05-28 Composant pour dispositif de conversion photoélectrique, dispositif de conversion photoélectrique et module de conversion photoélectrique

Country Status (1)

Country Link
WO (1) WO2010137687A1 (fr)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011081090A1 (fr) * 2009-12-29 2011-07-07 シャープ株式会社 Cellule solaire à concentrateur, module de cellule solaire à concentrateur et système de cellule solaire à concentrateur, et procédé de fabrication de cellule solaire à concentrateur et de module de cellule solaire à concentrateur
ES2365959A1 (es) * 2010-12-22 2011-10-14 Abengoa Solar New Technologies S.A. Módulo de concentración solar fotovoltaica y disposición modular que comprende dicho módulo.
WO2012100788A1 (fr) * 2011-01-26 2012-08-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Récepteur concentrateur photovoltaïque et son utilisation
CN102651414A (zh) * 2011-02-25 2012-08-29 安科太阳能公司 供在集中太阳能系统中使用的太阳能电池接纳器
EP2442370A3 (fr) * 2010-10-14 2012-09-12 Millenium Communication Co., Ltd Structure de paquet de cellule photovoltaïque concentrée
JP2013042087A (ja) * 2011-08-19 2013-02-28 Kyocera Corp 太陽電池モジュール
CN102983189A (zh) * 2011-09-07 2013-03-20 广东量晶光电科技有限公司 光电元器件封装结构
EP2693493A1 (fr) * 2012-07-31 2014-02-05 AZURSPACE Solar Power GmbH Unité de cellules solaires
EP2693494A1 (fr) * 2012-07-31 2014-02-05 AZURSPACE Solar Power GmbH Unité de cellules solaires
NL2010592C2 (nl) * 2013-04-09 2014-10-13 Suncycle B V Halfgeleiderinrichting.
NL2010591C2 (nl) * 2013-04-09 2014-10-13 Suncycle B V Foto-voltaã¯sche inrichting.
CN105553416A (zh) * 2015-12-18 2016-05-04 四川钟顺太阳能开发有限公司 一种适用于高倍聚光太阳电池的封装结构

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4830678A (en) * 1987-06-01 1989-05-16 Todorof William J Liquid-cooled sealed enclosure for concentrator solar cell and secondary lens
JPH11261096A (ja) * 1998-03-11 1999-09-24 Honda Motor Co Ltd 集光型太陽光発電装置
EP1835547A1 (fr) * 2004-11-01 2007-09-19 Zhores Ivanovich Alferov Module photovoltaique
WO2008050392A1 (fr) * 2006-10-24 2008-05-02 Daido Steel Co., Ltd Appareil photovoltaïque à concentration
WO2008127142A1 (fr) * 2007-04-16 2008-10-23 Zakrytoe Aktsionernoe Obschestvo 'technoexan' Module photovoltaïque
WO2009096267A1 (fr) * 2008-02-01 2009-08-06 Sharp Kabushiki Kaisha Batterie solaire, module de production d'électricité à partir d'énergie solaire du type à collecte de lumière et procédé de fabrication de batterie solaire

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4830678A (en) * 1987-06-01 1989-05-16 Todorof William J Liquid-cooled sealed enclosure for concentrator solar cell and secondary lens
JPH11261096A (ja) * 1998-03-11 1999-09-24 Honda Motor Co Ltd 集光型太陽光発電装置
EP1835547A1 (fr) * 2004-11-01 2007-09-19 Zhores Ivanovich Alferov Module photovoltaique
WO2008050392A1 (fr) * 2006-10-24 2008-05-02 Daido Steel Co., Ltd Appareil photovoltaïque à concentration
WO2008127142A1 (fr) * 2007-04-16 2008-10-23 Zakrytoe Aktsionernoe Obschestvo 'technoexan' Module photovoltaïque
WO2009096267A1 (fr) * 2008-02-01 2009-08-06 Sharp Kabushiki Kaisha Batterie solaire, module de production d'électricité à partir d'énergie solaire du type à collecte de lumière et procédé de fabrication de batterie solaire

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9923112B2 (en) 2008-02-11 2018-03-20 Suncore Photovoltaics, Inc. Concentrated photovoltaic system modules using III-V semiconductor solar cells
JP2011138970A (ja) * 2009-12-29 2011-07-14 Sharp Corp 集光型太陽電池、集光型太陽電池モジュールおよびその製造方法
WO2011081090A1 (fr) * 2009-12-29 2011-07-07 シャープ株式会社 Cellule solaire à concentrateur, module de cellule solaire à concentrateur et système de cellule solaire à concentrateur, et procédé de fabrication de cellule solaire à concentrateur et de module de cellule solaire à concentrateur
EP2442370A3 (fr) * 2010-10-14 2012-09-12 Millenium Communication Co., Ltd Structure de paquet de cellule photovoltaïque concentrée
ES2365959A1 (es) * 2010-12-22 2011-10-14 Abengoa Solar New Technologies S.A. Módulo de concentración solar fotovoltaica y disposición modular que comprende dicho módulo.
WO2012100788A1 (fr) * 2011-01-26 2012-08-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Récepteur concentrateur photovoltaïque et son utilisation
CN102651414A (zh) * 2011-02-25 2012-08-29 安科太阳能公司 供在集中太阳能系统中使用的太阳能电池接纳器
JP2013042087A (ja) * 2011-08-19 2013-02-28 Kyocera Corp 太陽電池モジュール
CN102983189B (zh) * 2011-09-07 2015-10-21 广东量晶光电科技有限公司 光电元器件封装结构
CN102983189A (zh) * 2011-09-07 2013-03-20 广东量晶光电科技有限公司 光电元器件封装结构
EP2693493A1 (fr) * 2012-07-31 2014-02-05 AZURSPACE Solar Power GmbH Unité de cellules solaires
WO2014019655A1 (fr) * 2012-07-31 2014-02-06 Azur Space Solar Power Gmbh Unité photopile
WO2014019654A1 (fr) * 2012-07-31 2014-02-06 Azur Space Solar Power Gmbh Unité cellule solaire
EP2693494A1 (fr) * 2012-07-31 2014-02-05 AZURSPACE Solar Power GmbH Unité de cellules solaires
NL2010592C2 (nl) * 2013-04-09 2014-10-13 Suncycle B V Halfgeleiderinrichting.
NL2010591C2 (nl) * 2013-04-09 2014-10-13 Suncycle B V Foto-voltaã¯sche inrichting.
CN105553416A (zh) * 2015-12-18 2016-05-04 四川钟顺太阳能开发有限公司 一种适用于高倍聚光太阳电池的封装结构
CN105553416B (zh) * 2015-12-18 2017-11-03 四川钟顺太阳能开发有限公司 一种适用于高倍聚光太阳电池的封装结构

Similar Documents

Publication Publication Date Title
WO2010137687A1 (fr) Composant pour dispositif de conversion photoélectrique, dispositif de conversion photoélectrique et module de conversion photoélectrique
US20090159125A1 (en) Solar cell package for solar concentrator
WO2011081090A1 (fr) Cellule solaire à concentrateur, module de cellule solaire à concentrateur et système de cellule solaire à concentrateur, et procédé de fabrication de cellule solaire à concentrateur et de module de cellule solaire à concentrateur
KR20100135200A (ko) Ⅲ―ⅴ 반도체 태양 전지용 집광형 광기전 시스템 리시버
CN106449805A (zh) 集中器型光电（cpv）模块、接收器和子接收器及其形成方法
CN103531572B (zh) 晶片级封装的光学组件以及具有该光学组件的收发模块
CN111934193B (zh) 一种ld芯片无机封装结构及其制备方法
WO2011058941A1 (fr) Dispositif de conversion photovoltaïque, emballage destiné à contenir un élément de conversion photovoltaïque et module de conversion photovoltaïque associé
JP5388778B2 (ja) 光電変換装置、光電変換素子収納用パッケージ、及び光電変換モジュール
JP2011174763A (ja) 赤外線検出器
WO2011024747A1 (fr) Dispositif de conversion photoélectrique, boîtier permettant de loger un élément de conversion photoélectrique et module de conversion photoélectrique
JP2011108866A (ja) 光電変換装置、光電変換素子収納用パッケージ及び光電変換モジュール
JP2014063779A (ja) 集光型太陽光発電装置の太陽電池
JP2011151276A (ja) 光電変換装置及び光電変換モジュール
JP6026821B2 (ja) 光電変換装置、光電変換モジュールおよび光電変換装置用部品
JP5653132B2 (ja) 光電変換装置、および光電変換モジュール
JP5388760B2 (ja) 光電変換装置、光電変換素子収納用パッケージ、並びに光電変換モジュール
JP5495824B2 (ja) 光電変換装置及び光電変換モジュール
JP5393350B2 (ja) 光電変換装置、並びに光電変換モジュール
JP2012089592A (ja) 光電変換装置および光電変換モジュール
JP2011096911A (ja) 光電変換装置及び光電変換モジュール
JP5645774B2 (ja) 太陽電池モジュール
JP5495737B2 (ja) 光電変換装置及び光電変換モジュール
JP5676953B2 (ja) 光電変換装置、ならびに光電変換モジュール
JP5869317B2 (ja) 集光型太陽電池装置用部品および集光型太陽電池装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10780641

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10780641

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP