WO2010131290A1 - 電解コンデンサ用アルミニウム電極板の製造方法および製造装置 - Google Patents
電解コンデンサ用アルミニウム電極板の製造方法および製造装置 Download PDFInfo
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- WO2010131290A1 WO2010131290A1 PCT/JP2009/002065 JP2009002065W WO2010131290A1 WO 2010131290 A1 WO2010131290 A1 WO 2010131290A1 JP 2009002065 W JP2009002065 W JP 2009002065W WO 2010131290 A1 WO2010131290 A1 WO 2010131290A1
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- etching
- aluminum
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- etching solution
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- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 167
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 165
- 239000003990 capacitor Substances 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 238000005530 etching Methods 0.000 claims abstract description 270
- 238000004891 communication Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 25
- 239000012530 fluid Substances 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 87
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 238000005192 partition Methods 0.000 description 8
- 229910052742 iron Inorganic materials 0.000 description 7
- 229920000128 polypyrrole Polymers 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 229920001002 functional polymer Polymers 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 5
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 229910000765 intermetallic Inorganic materials 0.000 description 4
- FLDCSPABIQBYKP-UHFFFAOYSA-N 5-chloro-1,2-dimethylbenzimidazole Chemical compound ClC1=CC=C2N(C)C(C)=NC2=C1 FLDCSPABIQBYKP-UHFFFAOYSA-N 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- 239000001741 Ammonium adipate Substances 0.000 description 3
- 235000019293 ammonium adipate Nutrition 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 229940080299 sodium 2-naphthalenesulfonate Drugs 0.000 description 2
- YWPOLRBWRRKLMW-UHFFFAOYSA-M sodium;naphthalene-2-sulfonate Chemical compound [Na+].C1=CC=CC2=CC(S(=O)(=O)[O-])=CC=C21 YWPOLRBWRRKLMW-UHFFFAOYSA-M 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910018191 Al—Fe—Si Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/055—Etched foil electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
- H01G9/045—Electrodes or formation of dielectric layers thereon characterised by the material based on aluminium
Definitions
- the present invention relates to a method and an apparatus for manufacturing an aluminum electrode plate for an electrolytic capacitor by AC etching an aluminum plate.
- an aluminum foil is disposed between two electrodes disposed in an etching solution, and an alternating current is applied between the two electrodes.
- Non-Patent Document 1 has a problem that it can only etch one aluminum foil and has extremely low productivity because there are only two electrodes.
- the inventor of the present invention arranges an aluminum foil 10x between the electrodes 20x opposed to each other in three or more electrodes 20x, as shown in FIG. 7A. It is proposed to apply an alternating current to all three or more electrodes 20x.
- the object of the present invention is to provide a method and a method for manufacturing an aluminum electrode plate for an electrolytic capacitor capable of achieving simplification of the device configuration and stable etching between any of the electrodes. It is in providing an apparatus.
- the manufacturing method of aluminum electrode plate for electrolytic capacitors which carries out alternating current etching of aluminum plate in etching liquid stored in an etching tank, three or more electrodes in the etching liquid Are disposed so as to face each other, the aluminum plate is disposed between each of the three or more electrodes facing each other, and an alternating current is applied between the electrodes disposed at both ends of the three or more electrodes. And applying alternating current etching to both sides of the aluminum plate.
- the apparatus for manufacturing an aluminum electrode plate for an electrolytic capacitor that performs AC etching on an aluminum plate in an etching solution stored in an etching tank three or more sheets disposed to face each other in the etching solution.
- a plate is arranged.
- the present invention three or more electrodes are arranged to be opposed to each other in the etching solution, and an aluminum plate is arranged between the opposing electrodes of the three or more electrodes, and among the three or more electrodes, An alternating current is applied between the electrodes disposed at both ends. As a result, both sides of the aluminum plate are etched. At this time, it is not necessary to supply power to the electrodes other than the electrodes disposed at both ends among the three or more electrodes and the aluminum plate disposed between the electrodes. For this reason, the device configuration can be simplified, for example, the wiring may be connected to only a part of the electrodes.
- the etching can be performed in a state where the etching current density and the like to the aluminum plate are stable.
- a shielding portion for an electrode that blocks between the inner wall of the etching bath and the electrode, and a shielding portion for an aluminum plate that blocks between the inner wall of the etching bath and the aluminum plate; Is preferably provided. According to such a configuration, it is possible to prevent the electrical influence between the plurality of etching chambers through the etching solution.
- the electrode shielding portion is a slit for holding the electrode into which the end portion of the electrode is inserted
- the aluminum plate shielding portion is from the slit for holding the aluminum plate into which the end portion of the aluminum plate is inserted. It is preferable that That is, it is preferable that the end portion of the electrode is held using the electrode shielding portion, and the end portion of the aluminum plate is held using the aluminum plate shielding portion.
- the etching bath is provided with a plurality of etching solution supply ports for supplying the etching solution to each of a plurality of etching chambers partitioned by the electrode and the aluminum plate. According to this structure, it is possible to prevent the electrical influence between the etching chambers through the etching solution.
- the plurality of etching solution supply ports communicate with a common etching solution supply path.
- the plurality of etching solution supply ports are opened at the wall surface of the etching tank, and the side opposite to the side on which the electrode is disposed with respect to the inner wall where the etching solution supply port is opened in the etching tank
- the etching solution supply path is defined in the According to this configuration, even when a plurality of etching solution supply ports are provided, the configuration of the etching solution supply path can be simplified.
- the plurality of etching solution supply ports are opened at a bottom wall of the wall surface of the etching tank. According to this configuration, since the etchant can be efficiently stirred in the etching chamber, the composition and temperature of the etchant in the etching chamber can be made uniform.
- the aluminum electrode plate for electrolytic capacitors to which the present invention is applied is used, for example, as an anode of an aluminum electrolytic capacitor in which a functional polymer is used as an electrolyte. That is, the dielectric film is formed on the surface of the aluminum electrode plate for electrolytic capacitor to which the present invention is applied, and the functional polymer layer is formed on the dielectric film, and is used for the electrolytic capacitor.
- the present invention three or more electrodes are arranged to be opposed to each other in the etching solution, and an aluminum plate is arranged between the opposing electrodes of the three or more electrodes, and among the three or more electrodes, An alternating current is applied between the electrodes disposed at both ends. As a result, both sides of the aluminum plate are etched. At this time, it is not necessary to supply power to the electrodes other than the electrodes disposed at both ends among the three or more electrodes and the aluminum plate disposed between the electrodes. For this reason, the device configuration can be simplified, for example, the wiring may be connected to only a part of the electrodes.
- the etching can be performed in a state where the etching current density and the like to the aluminum plate are stable.
- FIG. 1 is explanatory drawing which shows typically the manufacturing method and manufacturing apparatus (etching apparatus) of the aluminum electrode plate for electrolytic capacitors to which this invention is applied.
- FIG. 2 is an explanatory view showing an essential part of a manufacturing apparatus of an aluminum electrode plate for an electrolytic capacitor to which the present invention is applied.
- FIG. 1 shows the case where five electrodes are used in the etching apparatus
- FIG. 2 shows the etching apparatus capable of etching a total of six aluminum plates by a total of seven electrodes.
- the number of electrodes may be three or more, and is not limited to the form described below.
- the apparatus for producing an aluminum electrode plate for electrolytic capacitors (hereinafter referred to as etching apparatus 100) to which the present invention is applied is an etching bath 30 in which a hydrochloric acid etching solution 40 is stored. It has three or more sheets of electrodes 20 disposed to face each other in the etching solution 40, and a power supply device 80.
- the electrode 20 is made of a conductor such as carbon or platinum which does not dissolve in electrolysis in the etching solution.
- the etching tank 30 is made of an insulator such as a resin.
- the power supply device 80 is connected to the electrodes 20a and 20e disposed at both ends of the three or more electrodes 20, and an alternating current is generated between the two electrodes 20a and 20e. Apply.
- the waveform of the alternating current used here is symmetrical in the positive and negative directions.
- an aluminum plate 10 is disposed between the electrodes 20 facing each other in the three or more electrodes 20, and the electrodes 20 and the aluminum plates 10 are alternately disposed. That is, in the etching apparatus 100, the electrode 20 (electrode 20a), the aluminum plate 10 (aluminum plate 10a), the electrode 20 (electrode 20b), the aluminum plate 10 (aluminum plate 10b), the electrode 20 (electrode 20c), the aluminum plate 10 (electrode 20c).
- the aluminum plate 10c), the electrode 20 (electrode 20d), the aluminum plate 10 (aluminum plate 10d), and the electrode 20 (electrode) are arranged in this order in a state of facing each other.
- the width dimension of the electrode 20 is larger than that of the aluminum plate 10.
- both surfaces of the aluminum plate 10 are AC etched.
- the electrodes 20b, 20c, and 20d other than the electrodes 20a and 20e disposed at both ends are not connected to the power supply device 80 by wiring and are in an electrically floating state.
- the aluminum plates 10 are separated from each other, and the aluminum plates 10 are not connected to the power supply 80 by wiring. For this reason, the aluminum plate 10 is in an electrically floating state.
- a plurality of plate parts 36 are formed at predetermined intervals on both of the opposing side walls 32 and 33.
- An electrode shielding portion 51 is formed to close the gap between the inner wall and the electrode 20.
- the electrode shielding portion 51 is formed on both sides in the width direction of the electrode 20. Further, the electrode shielding portion 51 is formed in a slit shape extending in the vertical direction while being opened inside, and such a slit is a slit for electrode holding into which both end portions in the width direction of the electrode 20 are inserted. .
- a shielding part 52 for aluminum plate is formed by the plate part 36 so as to close the space between the inner wall of the etching tank 30 and the aluminum plate 10.
- the aluminum plate shielding portions 52 are formed on both sides in the width direction of the aluminum plate 10.
- the aluminum plate shielding portion 52 is formed in a slit shape extending in the vertical direction while being opened to the inside, and such a slit is for holding the aluminum plate into which both ends of the aluminum plate 10 in the width direction are inserted. It is a slit.
- etching apparatus 100 configured as above, when the electrode 20 is inserted into the electrode shielding portion 51 (electrode holding slit) and the aluminum plate 10 is inserted into the aluminum plate shielding portion 52 (aluminum plate holding slit), etching is performed.
- a plurality of etching chambers 35 are defined in the bath 30 by the electrodes 20 and the aluminum plate 10.
- a plurality of etching solution supply ports 55 for supplying an etching solution for each etching chamber 35 are provided.
- the plurality of etching solution supply ports 55 are opened at the bottom wall 34 of the wall surface of the etching tank 30.
- the etching bath 30 communicates with a plurality of etching solution supply ports 55 on the opposite side to the side where the electrode 20 is disposed with respect to the bottom wall 34 where the etching solution supply port 55 is opened, that is, below the bottom wall 34.
- a common etchant supply path 38 is defined.
- An etching solution supply device (not shown) is connected to the etching solution supply passage 38, and the etching solution supplied from the etching solution supply device is connected via the etching solution supply passage 38 and the etching solution supply port 55. It is supplied to each etching chamber 35.
- the etching solution supplied from the etching solution supply port 55 to the etching chamber 35 also exerts the function of stirring the inside of the etching chamber 35.
- the etching solution supply port 55 is opened in the vicinity of both sides sandwiching the lower end portion of the aluminum plate 10. Therefore, the etching solution in the vicinity of the surface of the aluminum plate 10 can be efficiently stirred.
- a plurality of overflow ports 61 are formed near the upper end of the side wall 33, and the overflow ports 61 overflow the etching solution from each of the plurality of etching chambers 35.
- a recovery passage 39 for recovering the etching solution overflowing to the lower position of the overflow port 61 is formed.
- the three or more electrodes 20 are disposed to face each other in the etching solution 40, and the aluminum plate 10 is interposed between the opposing electrodes 20 in the three or more electrodes 20.
- An alternating current is applied between the electrodes 20 a and 20 e disposed at both ends of the three or more electrodes 20.
- both sides of the aluminum plate 10 are etched.
- power is not supplied to the electrodes 20b, 20c, 20d other than the electrodes 20a, 20e disposed at both ends among the three or more electrodes 20, and the aluminum plate 10 disposed between the electrodes 20. It is also good.
- the device configuration can be simplified, for example, the wiring may be connected to only a part of the electrodes 20.
- the wiring since it is sufficient to connect the wiring to only a part of the electrodes 20, a great deal of effort is not required at the time of maintenance such as replacement of the electrodes 20.
- the situation that the balance such as the wiring resistance to each electrode 20 is broken does not occur. Therefore, the etching current density for the aluminum plate 10 is stable.
- the etching tank 30 there are a shielding part 51 for the electrode for closing the space between the inner wall of the etching tank 30 and the electrode 20, and a shielding part 52 for the aluminum plate for closing the space between the inner wall of the etching tank 30 and the aluminum plate 10. Because of the provision, the plurality of etching chambers 35 can be prevented from having an electrical influence via the etching solution.
- the etching bath 30 is provided with a plurality of etching solution supply ports 55 for supplying the etching solution for each of the plurality of etching chambers 35, electrical connection is made between the etching chambers 35 via the etching solution. It can prevent influence and mutual.
- the plurality of etching solution supply ports 55 communicate with the common etching solution supply path 38, so the configuration for supplying the etching solution can be simplified. Moreover, since the etching solution supply path 38 is formed on the side opposite to the side on which the electrode 20 is disposed with respect to the bottom wall 38 where the etching solution supply port 55 is opened in the etching tank 30, a plurality of etching solutions The etching solution supply passage 38 communicating with the supply port 55 can be realized with a simple configuration.
- the electrode shielding portion 51 is configured as an electrode holding slit into which the end of the electrode 20 is inserted
- the aluminum plate shielding portion 52 is as an aluminum plate holding slit into which the end of the aluminum plate 10 is inserted. It is configured. Therefore, the end portion of the electrode 20 can be held using the electrode shielding portion 51, and the end portion of the aluminum plate 10 can be held using the aluminum plate shielding portion 52.
- the etching solution supply ports 55 are opened at the bottom wall 34 in the wall surface of the etching tank 30, the etching solution can be efficiently stirred in the etching chamber 35. Therefore, the composition and temperature of the etching solution in the etching chamber 35 can be made uniform.
- FIG. 3 is an explanatory view showing the main part of another manufacturing apparatus (etching apparatus) of the aluminum electrode plate for electrolytic capacitor to which the present invention is applied, and FIGS. 3A and 3B show the manufacturing of the present embodiment.
- the device is shown in cross section and in perspective.
- FIG. 4 is an explanatory view showing the main part of still another manufacturing apparatus (etching apparatus) of the aluminum electrode plate for electrolytic capacitor to which the present invention is applied, and FIGS. 4 (a) and 4 (b) show the embodiment of the present invention.
- the manufacturing apparatus is shown in a cross-sectional view and a perspective view.
- the basic configuration of the manufacturing apparatus shown in FIGS. 3 and 4 is the same as that of the etching apparatus 100 described with reference to FIGS. 1 and 2. Therefore, in the following description, the same reference numerals are given to the common parts, and the description thereof will be omitted.
- the aluminum plate 10 is arrange
- etching apparatus 100 having such a configuration, a plurality of etching chambers 35 are partitioned by the electrodes 20 and the aluminum plate 10, and an etching solution supply port 55 is provided for each of the etching chambers 35. Further, the plurality of etching solution supply ports 55 communicate with a common etching solution supply path 38 configured below the bottom wall 34.
- a plurality of partition plates 53 are provided in the etching solution supply passage 38, and the etching solution supply passage 38 is divided into individual chambers 381 corresponding to the etching chamber 35 one by one by the partition plates 53. It is done.
- the partition plate 53 is formed with an opening 530 communicating the adjacent individual chambers 381 with each other, and the adjacent individual chambers 381 communicate with each other through the opening 530. For this reason, when the etching solution is supplied to any of the plurality of individual chambers 381, the etching solution is sequentially supplied to each of the individual chambers 381, and is supplied to each of the etching chambers 35 via the individual chambers 381.
- the partition plate 53 is provided in the etching solution supply path 38, and the partition plate 53 is a shield that suppresses the flow of current through the etching solution between the plurality of etching chambers 35. It functions as a board. Therefore, according to the etching apparatus 100 of the present embodiment, compared with the etching apparatus 100 described with reference to FIGS. 1 and 2, the etching chamber has an electrical influence via the etching solution between the etching chambers 35. It can be reliably prevented from fitting.
- the etching apparatus 100 shown in FIGS. 4A and 4B as in the etching apparatus 100 described with reference to FIGS. 1 and 2, three or more electrodes 20 are disposed to face each other in the etching solution 40. Do. Moreover, the aluminum plate 10 is arrange
- etching apparatus 100 having such a configuration, a plurality of etching chambers 35 are partitioned by the electrodes 20 and the aluminum plate 10, and an etching solution supply port 55 is provided for each of the etching chambers 35. Further, the plurality of etching solution supply ports 55 communicate with the etching solution supply path 38 formed below the bottom wall 34.
- the etching solution supply passage 38 is provided with a plurality of partition plates 53 in the same manner as the manufacturing apparatus described with reference to FIG. 3. It is divided into individual rooms 381 corresponding to 35 one by one.
- the partition plate 53 is not formed with an opening for communicating the adjacent individual chambers 381 with each other. Private rooms 381 are independent of each other. Therefore, in the etching apparatus 100 of the present embodiment, a common etching solution supply passage 41 is provided separately from the etching solution supply passage 38, and the etching solution supply passage 41 and the individual chambers 381 of the etching solution supply passage 38 are connected via the pipe 42. Each is in communication. Therefore, when the etching solution is supplied to the etching solution supply path 41, the etching solution is supplied to the etching chambers 35 via the individual chambers 381 of the etching solution supply path 38.
- the etching apparatus 100 having such a configuration, the individual chambers 381 of the etching solution supply path 38 are completely separated by the partition plate 53. Therefore, the etching apparatus 100 described with reference to FIGS. 1 and 2 and FIG. As compared with the etching apparatus 100 described above, it is possible to prevent the electrical influence among the plurality of etching chambers 35 more reliably.
- the aluminum plate 10 is used, for example, to form an anode (an aluminum electrode plate for an electrolytic capacitor) of an aluminum electrolytic capacitor in which a functional polymer such as polypyrrole, polythiophene, or polyaniline is used as an electrolyte. That is, after the aluminum plate 10 is etched, an anodized film is formed on the surface thereof and used as an anode of an aluminum solid electrolytic capacitor.
- a functional polymer such as polypyrrole, polythiophene, or polyaniline
- the aluminum plate 10 contains, for example, an aluminum purity of 99.98% by mass or more, less than 30 ppm of copper, and 5 to 50 ppm of iron, with the balance being other unavoidable impurities.
- the number of Fe-containing intermetallic compounds having a particle size of 0.1 to 1.0 ⁇ m in diameter is equivalent to 1 ⁇ 10 7 to 10 10 / cm 3 , the ratio of pits of a specific size diameter can be made as high as possible. It is possible to make a capacitor with lower ESR. This is considered to be because the chemical conversion film is formed with a uniform thickness on the pit surface and the solid electrolyte is easily impregnated because the particle size is small in spite of the large amount of intermetallic compounds.
- the aluminum plate 10 should have Si 60 ppm or less, preferably 40 ppm or less. This is because if Fe and Si exceed the upper limit value, crystallized and precipitated substances of coarse intermetallic compounds containing Fe and Si are generated, and the leakage current becomes large. In the case of Si, a single Si also occurs, which is not preferable for the same reason. When Cu exceeds the upper limit value, the corrosion potential of the matrix is largely shifted to noble, which may make it impossible to perform preferable etching.
- the content of 5 to 50 ppm of Fe is a well-known value, Al m Fe, Al 6 Fe, Al 3 Fe, Al-Fe-Si, Al- (Fe, M) -Si (M is other It is preferable because an intermetallic compound such as metal) is generated to be a starting point of pits for alternating current etching.
- the inclusion of less than 30 ppm of Cu is preferable because it can stabilize the corrosion potential of the matrix in the presence of Fe and facilitate pitting of a specific size.
- the preferable content of Cu is 25 ppm or less, and the lower limit is 2 ppm or more, more preferably 3 ppm or more.
- Ni, Ti and Zr may each be 10 ppm or less, preferably 3 ppm or less.
- the other impurities are preferably 3 ppm or less. Such an element becomes the starting point of the pits in the alternating current etching method, and therefore, it is easy to make a pit having a diameter of a specific size in a cancellous manner.
- the aluminum plate 10 is etched to a deep position so that the thickness is as thick as 150 ⁇ m or more, and the thickness of the etching portion is 150 ⁇ m or more in both surfaces in total. More specifically, the etching is performed to a deep position so that the etching site is 75 ⁇ m or more, 100 ⁇ m or more, and further 120 ⁇ m or more on one side. Nevertheless, in the present embodiment, since the aluminum plate 10 has the above-mentioned composition, several thousand to several hundreds of thousands of cancellous pits can be drilled per square millimeter. Less dissolution of Therefore, the aluminum electrode plate (etched plate) for electrolytic capacitors to which the present invention is applied has a high etching magnification and a high capacitance.
- the thickness of the aluminum plate 10 may be various thicknesses depending on the purpose, but for example, 150 ⁇ m to 1 mm, usually 300 to 400 ⁇ m is used.
- etching the aluminum plate 10 generation of etching pits and growth of etching pits may be performed in one etching step. Further, there are cases where a first etching process for generating an etching pit on the aluminum plate 10 and a second etching process for growing the etching pit are performed. Furthermore, an auxiliary etching process may be performed between the first etching process and the second etching process. In any case, an aqueous solution of hydrochloric acid alone or an aqueous solution obtained by adding sulfuric acid, nitric acid or the like to hydrochloric acid is used as the etching solution. The etching solution temperature is 15 to 55.degree.
- an alternating current waveform with a frequency of 10 to 50 Hz is used, and as such an alternating current waveform, a sine waveform, a rectangular waveform or the like is used. In either case, symmetrical positive and negative waveforms are used.
- the etching current density is 0.1 to 0.5 A / cm 2 , and according to the conditions of such etching, a large number of pits can be formed on the surface of the aluminum plate 10.
- the etching method and the etching apparatus 100 described with reference to FIGS. 1 and 2 can be used.
- the etching apparatus 100 corresponding to each etching process is prepared, and the etching process is performed in each etching apparatus 100 under different conditions.
- the common etching apparatus 100 may be used.
- the etching solution for the first etching step is discharged from the etching tank 30, and thereafter, the etching solution for the second etching step is stored in the etching tank 30, An etching process may be performed.
- the samples and etching conditions are as follows.
- Composition Aluminum purity: 99.99 mass% or more Copper: 15 ppm Iron: 30 ppm Silicon: 40 ppm Remainder: Other unavoidable impurities
- Etching conditions 1st step etching (1st etching process)
- Composition of etching solution Mixed solution of 3 mol / liter and 0.5 mole / liter of sulfuric acid Etching solution temperature: 40 ° C.
- Electrolytic waveform Sine wave AC, frequency 50 Hz Current density: 0.5A / cm 2 Amount of electricity: 30 C / cm 2 Second step etching (second etching step) Composition of etching solution: mixed solution of 7 mol / liter of hydrochloric acid + 0.5 mol / liter of sulfuric acid Etchant temperature: 25 ° C Electrolytic waveform: Sine wave AC, frequency 20 Hz Current density: 0.3A / cm 2 Amount of electricity: 450 C / cm 2
- Table 1 as a reference example, as shown in FIG. 7B, only the electrodes 20a and 20e at both ends are provided, and the electrodes 20b, 20c and 20d shown in FIG. The results of etching the aluminum plate 10 (aluminum plates 10a, 10b, 10c, 10d) are also shown.
- the capacitance value is lower than in the present embodiment, and from the four aluminum plates 10a, 10b, 10c, 10d). Large variations occurred in the capacitance value of the obtained electrode. For example, in the method according to the reference example shown in FIG.
- the capacitance values of the aluminum plates 10b and 10c disposed in the middle are significantly lower than those of the aluminum plates 10a and 10d on both sides.
- the result is that both sides are not properly etched.
- FIG. 5 is a view showing a cross-sectional photograph of the aluminum etched plate for electrolytic capacitor obtained by applying the present invention.
- FIG. 6 is an explanatory view when manufacturing an electrolytic capacitor using an anode obtained by anodizing an aluminum etched plate for electrolytic capacitor to which the present invention is applied.
- the aluminum etched plate 1 for an electrolytic capacitor to which the present invention is applied is provided with etching portions 3 on both sides of the core portion 2.
- the aluminum etched plate 1 for electrolytic capacitor is subjected to, for example, 5 V conversion treatment in an aqueous solution of ammonium adipate, and then the side end face of the aluminum etched plate 1 for electrolytic capacitor is exposed as shown in FIG.
- the anode lead 6 such as a lead wire is joined to the side end face 4 of the portion 2.
- laser welding 5 in which the spot diameter is reduced to less than the thickness of the core portion is used.
- the spot diameter is 20 to 100 ⁇ m ⁇ .
- the surface of the anodized aluminum etched plate 1 for electrolytic capacitors is impregnated with polypyrrole according to a conventional method to form a functional polymer layer, and then the surface of the etched plate on which the functional polymer layer is formed.
- the cathode is formed using carbon paste, silver paste or the like to make an electrolytic capacitor of, for example, 2.5 V / 330 ⁇ F.
- an ethanol solution of pyrrole monomer is dropped into pits, and then ammonium persulfate and an aqueous solution of sodium 2-naphthalenesulfonate are dropped and chemically polymerized to form a precoat layer of polypyrrole.
- the electrode plate is immersed in an acetonitrile electrolyte containing pyrrole monomer and sodium 2-naphthalenesulfonate, and a stainless steel wire is brought into contact with a part of the previously formed chemically polymerized polypyrrole layer to form an anode, Electrolytic polymerization is performed using a stainless steel plate as a cathode to form electrolytically polymerized polypyrrole to be a functional polymer layer. The same characteristics can be obtained by using polythiophene instead of polypyrrole.
- the apparatus configuration can be simplified.
- a great deal of effort is not required at the time of maintenance such as electrode replacement.
- the situation that the balance such as the wiring resistance to each electrode is broken does not occur, and the etching current density to the aluminum plate is stable. Therefore, an aluminum electrode plate for an electrolytic capacitor having stable capacitance and the like can be efficiently produced.
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Abstract
Description
図1は、本発明を適用した電解コンデンサ用アルミニウム電極板の製造方法および製造装置(エッチング装置)を模式的に示す説明図である。図2は、本発明を適用した電解コンデンサ用アルミニウム電極板の製造装置の要部を示す説明図である。図1には、エッチング装置に5枚の電極が用いられている場合を示し、図2には、計7枚の電極によって計6枚のアルミニウム板をエッチング可能なエッチング装置を示してある。なお、電極の枚数については3枚以上であればよく、以下に説明する形態に限定されない。
以上説明したように、本形態では、エッチング液40中に3枚以上の電極20を対向するように配置するとともに、3枚以上の電極20において対向し合う電極20の各間にアルミニウム板10を配置し、3枚以上の電極20のうち、両端に配置された電極20a、20e間に交流電流を印加する。その結果、アルミニウム板10の両面がエッチングされる。その際、3枚以上の電極20のうち、両端に配置された電極20a、20e以外の電極20b、20c、20d、および各電極20間に配置されたアルミニウム板10には、給電を行なわなくてもよい。このため、一部の電極20のみに配線接続すればよいなど、装置構成を簡素化することができる。また、一部の電極20のみに配線を接続すればよいので、電極20の交換等のメンテナンスの際、多大な手間がかからない。さらに、一部の電極20のみに配線を接続すればよいので、各電極20への配線抵抗等のバランスが崩れるという事態が発生しない。それ故、アルミニウム板10に対するエッチング電流密度が安定している。
図3は、本発明を適用した電解コンデンサ用アルミニウム電極板の別の製造装置(エッチング装置)の要部を示す説明図であり、図3(a)、(b)には、本形態の製造装置を断面図および斜視図で示してある。図4は、本発明を適用した電解コンデンサ用アルミニウム電極板のさらに別の製造装置(エッチング装置)の要部を示す説明図であり、図4(a)、(b)には、本形態の製造装置を断面図および斜視図で示してある。なお、図3および図4に示す製造装置の基本的な構成は、図1および図2を参照して説明したエッチング装置100と同様である。従って、以下の説明では、共通する部分に同一の符合を付して図示し、それらの説明を省略する。
本形態において、アルミニウム板10は、例えば、電解質として、ポリピロール、ポリチオフェン、ポリアニリン等の機能性高分子が用いられるアルミニウム電解コンデンサの陽極(電解コンデンサ用アルミニウム電極板)を構成するのに用いられる。すなわち、アルミニウム板10は、エッチングされた後、その表面に陽極酸化皮膜が形成されて、アルミニウム固体電解コンデンサの陽極として用いられる。
図1および図2を参照して説明したエッチング方法やエッチング装置100によってアルミニウム板10をエッチングした後、アジピン酸アンモニウム水溶液中で陽極酸化を行ない、約6Vの耐電圧を備えた酸化膜を形成したときのアジピン酸アンモニウム水溶液中での静電容量を測定した。その結果を表1に示す。なお、表1には、図1に示す4枚のアルミニウム板10(アルミニウム板10a、10b、10c、10d)の静電容量値を示してある。
アルミニウム板10
厚さ:0.25mm
組成
アルミニウム純度:99.99質量%以上
銅:15ppm
鉄:30ppm
シリコン:40ppm
残部:その他の不可避不純物
エッチング条件
1段目エッチング(第1エッチング工程)
エッチング液組成:3モル/リッタ塩酸+0.5モル/リッタ硫酸の混合水溶液
エッチング液温度:40℃
電解波形:正弦波交流、周波数50Hz
電流密度:0.5A/cm2
電気量:30C/cm2
2段目エッチング(第2エッチング工程)
エッチング液組成:7モル/リッタ塩酸+0.5モル/リッタ硫酸の混合水溶液
エッチング液温度:25℃
電解波形:正弦波交流、周波数20Hz
電流密度:0.3A/cm2
電気量:450C/cm2
図5は、本発明を適用して得た電解コンデンサ用アルミニウムエッチド板の断面写真を表す図である。図6は、本発明を適用した電解コンデンサ用アルミニウムエッチド板を陽極酸化して得た陽極を用いて電解コンデンサを製作するときの説明図である。
2 芯部
3 エッチング部位
10 アルミニウム板
20 電極
30 エッチング槽
35 エッチング室
38 エッチング液供給路
40 エッチング液
41 エッチング液供給路
51 電極用遮蔽部
52 アルミニウム板用遮蔽部
55 エッチング液供給口
80 電源装置
100 エッチング装置(製造装置)
Claims (8)
- エッチング槽内に貯留されたエッチング液中でアルミニウム板を交流エッチングする電解コンデンサ用アルミニウム電極板の製造方法において、
前記エッチング液中に3枚以上の電極を対向するように配置し、
前記3枚以上の電極において対向し合う電極の各間に前記アルミニウム板を配置し、
前記3枚以上の電極のうち、両端に配置された電極間に交流電流を印加して前記アルミニウム板の両面に交流エッチングを行なうことを特徴とする電解コンデンサ用アルミニウム電極板の製造方法。 - エッチング槽内に貯留されたエッチング液中でアルミニウム板を交流エッチングする電解コンデンサ用アルミニウム電極板の製造装置において、
前記エッチング液中で対向するように配置された3枚以上の電極と、
前記3枚以上の電極のうち、両端に配置された電極間に交流電流を印加する電源装置と、
を有し、
前記3枚以上の電極において対向し合う電極の各間に前記アルミニウム板が配置されることを特徴とする電解コンデンサ用アルミニウム電極板の製造装置。 - 前記エッチング槽には、該エッチング槽の内壁と前記電極との間を塞ぐ電極用遮蔽部と、当該エッチング槽の内壁と前記アルミニウム板との間を塞ぐアルミニウム板用遮蔽部と、が設けられていることを特徴とする請求項2に記載の電解コンデンサ用アルミニウム電極板の製造装置。
- 前記電極用遮蔽部は、前記電極の端部が差し込まれる電極保持用のスリットからなり、
前記アルミニウム板用遮蔽部は、前記アルミニウム板の端部が差し込まれるアルミニウム板保持用のスリットからなることを特徴とする請求項3に記載の電解コンデンサ用アルミニウム電極板の製造装置。 - 前記エッチング槽には、前記電極と前記アルミニウム板とによって区画された複数のエッチング室毎に前記エッチング液を供給する複数のエッチング液供給口が設けられていることを特徴とする請求項2乃至4の何れか一項に記載の電解コンデンサ用アルミニウム電極板の製造装置。
- 前記複数のエッチング液供給口は、共通のエッチング液供給路に連通していることを特徴とする請求項5に記載の電解コンデンサ用アルミニウム電極板の製造装置。
- 前記複数のエッチング液供給口は、前記エッチング槽の壁面で開口し、
前記エッチング槽において前記エッチング液供給口が開口する前記内壁に対して前記電極が配置される側とは反対側に前記エッチング液供給路が区画形成されていることを特徴とする請求項6に記載の電解コンデンサ用アルミニウム電極板の製造装置。 - 前記複数のエッチング液供給口は、前記エッチング槽の壁面のうち、底壁で開口していることを特徴とする請求項7に記載の電解コンデンサ用アルミニウム電極板の製造装置。
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PCT/JP2009/002065 WO2010131290A1 (ja) | 2009-05-12 | 2009-05-12 | 電解コンデンサ用アルミニウム電極板の製造方法および製造装置 |
CN2009801592367A CN102422371A (zh) | 2009-05-12 | 2009-05-12 | 电解电容器用铝电极板的制造方法和制造装置 |
JP2011513124A JP5408247B2 (ja) | 2009-05-12 | 2009-05-12 | 電解コンデンサ用アルミニウム電極板の製造方法および製造装置 |
TW098126364A TW201040325A (en) | 2009-05-12 | 2009-08-05 | Manufacturing method for an aluminum electrode plate for electrolytic capacitor and manufacturing apparatus therefor |
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JPS5339170B2 (ja) * | 1974-07-10 | 1978-10-19 | ||
JPS60181377U (ja) * | 1984-05-15 | 1985-12-02 | マルコン電子株式会社 | 電解コンデンサ用電極箔のエツチング装置 |
JPH03142912A (ja) * | 1989-10-30 | 1991-06-18 | Elna Co Ltd | 電解コンデンサ用アルミニウム箔のエッチング方法 |
JPH0661213A (ja) * | 1992-08-11 | 1994-03-04 | Mitsubishi Electric Corp | ウエットエッチング装置 |
JP2001338848A (ja) * | 2000-05-26 | 2001-12-07 | Matsuo Electric Co Ltd | 電気二重層コンデンサ |
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JPS54147465A (en) * | 1978-05-10 | 1979-11-17 | Shinei Tsuushin Kougiyou Kk | Wrapped dry electrolytic capacitor and method of producing same |
JP2009004409A (ja) * | 2007-06-19 | 2009-01-08 | Nichicon Corp | 電解コンデンサ用エッチング箔の製造装置および製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPS5339170B2 (ja) * | 1974-07-10 | 1978-10-19 | ||
JPS60181377U (ja) * | 1984-05-15 | 1985-12-02 | マルコン電子株式会社 | 電解コンデンサ用電極箔のエツチング装置 |
JPH03142912A (ja) * | 1989-10-30 | 1991-06-18 | Elna Co Ltd | 電解コンデンサ用アルミニウム箔のエッチング方法 |
JPH0661213A (ja) * | 1992-08-11 | 1994-03-04 | Mitsubishi Electric Corp | ウエットエッチング装置 |
JP2001338848A (ja) * | 2000-05-26 | 2001-12-07 | Matsuo Electric Co Ltd | 電気二重層コンデンサ |
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