WO2010128825A3 - 반도체 소자용 기판 및 이를 이용한 반도체 소자 - Google Patents

반도체 소자용 기판 및 이를 이용한 반도체 소자 Download PDF

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Publication number
WO2010128825A3
WO2010128825A3 PCT/KR2010/002922 KR2010002922W WO2010128825A3 WO 2010128825 A3 WO2010128825 A3 WO 2010128825A3 KR 2010002922 W KR2010002922 W KR 2010002922W WO 2010128825 A3 WO2010128825 A3 WO 2010128825A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
semiconductor device
lenses
gaps
manufacturing
Prior art date
Application number
PCT/KR2010/002922
Other languages
English (en)
French (fr)
Other versions
WO2010128825A2 (ko
Inventor
여환국
문영부
최성철
진용성
조인성
임원택
Original Assignee
(주)더리즈
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주)더리즈 filed Critical (주)더리즈
Publication of WO2010128825A2 publication Critical patent/WO2010128825A2/ko
Publication of WO2010128825A3 publication Critical patent/WO2010128825A3/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

에피층 성장에 제한을 주지 않으면서 렌즈의 충진 밀도를 높여 외부광추출효율을 증가시키는 반도체 소자 제조용 기판, 그리고 그 기판을 이용함에 따라 외부광추출 효율이 향상된 고출력 반도체 소자를 개시한다. 본 발명에 따른 반도체 소자 제조 용 기판은, 볼록 또는 오목 형상의 렌즈가 다수 형성되어 있는 기판으로서, 기판 상에 형성할 에피층의 측면 성장이 잘되는 방향과 직교하는 방향에 배열되어 있는 렌즈 사이의 간격이 다른 방향에 배열되어 있는 렌즈 사이의 간격에 비해 좁게 되 도록 상기 복수 개의 렌즈가 형성된다.
PCT/KR2010/002922 2009-05-07 2010-05-07 반도체 소자용 기판 및 이를 이용한 반도체 소자 WO2010128825A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090039593A KR101055266B1 (ko) 2009-05-07 2009-05-07 반도체 소자용 기판 및 이를 이용한 반도체 소자
KR10-2009-0039593 2009-05-07

Publications (2)

Publication Number Publication Date
WO2010128825A2 WO2010128825A2 (ko) 2010-11-11
WO2010128825A3 true WO2010128825A3 (ko) 2011-02-17

Family

ID=43050648

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/002922 WO2010128825A2 (ko) 2009-05-07 2010-05-07 반도체 소자용 기판 및 이를 이용한 반도체 소자

Country Status (2)

Country Link
KR (1) KR101055266B1 (ko)
WO (1) WO2010128825A2 (ko)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040019352A (ko) * 2001-07-24 2004-03-05 니치아 카가쿠 고교 가부시키가이샤 요철형성 기판을 갖춘 반도체발광소자
JP2008010894A (ja) * 2003-08-19 2008-01-17 Nichia Chem Ind Ltd 半導体素子、発光素子及びその基板の製造方法
JP2008177528A (ja) * 2006-12-21 2008-07-31 Nichia Chem Ind Ltd 半導体発光素子用基板の製造方法及びそれを用いた半導体発光素子

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100452750B1 (ko) 2003-08-12 2004-10-15 에피밸리 주식회사 Ⅲ-질화물 반도체 발광소자
KR100714639B1 (ko) 2003-10-21 2007-05-07 삼성전기주식회사 발광 소자
KR100576854B1 (ko) 2003-12-20 2006-05-10 삼성전기주식회사 질화물 반도체 제조 방법과 이를 이용한 질화물 반도체
KR100825137B1 (ko) 2006-07-11 2008-04-24 전북대학교산학협력단 반도체 구조물, 이의 제조 방법 및 반도체 발광 다이오드

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040019352A (ko) * 2001-07-24 2004-03-05 니치아 카가쿠 고교 가부시키가이샤 요철형성 기판을 갖춘 반도체발광소자
JP2008010894A (ja) * 2003-08-19 2008-01-17 Nichia Chem Ind Ltd 半導体素子、発光素子及びその基板の製造方法
JP2008177528A (ja) * 2006-12-21 2008-07-31 Nichia Chem Ind Ltd 半導体発光素子用基板の製造方法及びそれを用いた半導体発光素子

Also Published As

Publication number Publication date
WO2010128825A2 (ko) 2010-11-11
KR101055266B1 (ko) 2011-08-09
KR20100120780A (ko) 2010-11-17

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