WO2010121451A1 - 一种采用近空间升华技术在衬底沉积形成半导体薄膜的方法和装置 - Google Patents

一种采用近空间升华技术在衬底沉积形成半导体薄膜的方法和装置 Download PDF

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Publication number
WO2010121451A1
WO2010121451A1 PCT/CN2009/073089 CN2009073089W WO2010121451A1 WO 2010121451 A1 WO2010121451 A1 WO 2010121451A1 CN 2009073089 W CN2009073089 W CN 2009073089W WO 2010121451 A1 WO2010121451 A1 WO 2010121451A1
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Prior art keywords
crucible
depositing
semiconductor
thin film
semiconductor material
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PCT/CN2009/073089
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English (en)
French (fr)
Inventor
夏申江
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浙江嘉远格隆能源股份有限公司
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Publication of WO2010121451A1 publication Critical patent/WO2010121451A1/zh
Priority to US13/276,340 priority Critical patent/US20120040516A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/246—Replenishment of source material

Definitions

  • the present invention relates to a technique for depositing a semiconductor thin film, and more particularly to a method and apparatus for forming a semiconductor thin film on a substrate by a near-space sublimation technique.
  • a method of sublimation deposition in a near space to obtain high quality cadmium telluride is attracting people's attention.
  • the cadmium sulfide/cadmium telluride solar cell obtained by this method is used.
  • the conversion rate is as high as 16.8%, which is currently the highest in the world (see X. Wu et al., 17th European Photovoltaic Solar Energy Conversion Conference, Kunststoff, Germany, 22-26 Oct. 2001, II, 995-1000).
  • the near-space sublimation process is one of the vapor deposition methods.
  • the material forming the cadmium telluride film (hereinafter referred to as the raw material) is placed in a crucible made of graphite, and the raw material is deposited in the glass lining after sublimation in the near space of the graphite crucible.
  • the glass substrate is placed on the top of the crucible, and is separated by a heat-resistant insulating spacer between the graphite crucible and the glass substrate having good heat transfer performance, and between the surface of the raw material in the graphite crucible and the glass substrate The distance is about 0.5-5 cm, so that the raw material is sublimated at a certain temperature to become a gas phase, and then deposited on a glass substrate to form a semiconductor film.
  • Patents 4,207,119, 6,440,043 and 72,203,21 in the near-space sublimation process they employ, the raw materials are first filled into the crucible before deposition, and the amount of filling is the maximum capacity that can be withstood, in order to supplement
  • the raw materials consumed in film deposition need to be periodically filled with raw materials into the crucible.
  • there is a safety hazard in this operation because the heated container contains toxic gas, and the vacuum chamber is repeatedly opened during the deposition process to add raw materials. There are toxic gases, so it is necessary to cool the equipment before filling the raw materials.
  • the deposition process of the cadmium telluride film on the glass substrate is bound to be interrupted.
  • the technical problem to be solved by the present invention is to provide a method and apparatus for transporting a semiconductor material directly to a thin film vacuum deposition apparatus without opening a thin film vacuum deposition chamber, thereby supplying the semiconductor material continuously or intermittently.
  • the present invention adopts the following technical solutions:
  • a method for forming a semiconductor thin film on a substrate by using a near-space sublimation technique comprising: 1) filling the semiconductor material into the crucible: carrying the semiconductor material through the channel with the carrier gas to reach the crucible placed in the vacuum deposition chamber of the film;
  • a feed distributor is provided through which the semiconductor material carried by the carrier gas is evenly distributed at the bottom of the crucible.
  • the feed distributor is a porous manifold.
  • the porous manifold is made of stainless steel or graphite or silicon carbide material.
  • the carrier gas is one or a mixture of two or more of nitrogen, argon and helium.
  • the step 2) further comprises: sublimating the vapor phase semiconductor material through the heated porous gas permeable membrane together with the carrier gas, and then depositing on the substrate having a surface temperature lower than the temperature of the vapor phase semiconductor, and not solidifying into the gas phase in time.
  • the semiconductor material is sublimated into a gas phase in the heated porous gas permeable membrane, and the solid phase semiconductor material is blocked by the porous gas permeable membrane and cannot be deposited on the glass substrate.
  • the gas permeable membrane is heated to 2 to 5 ° C above the temperature of the crucible.
  • a device for forming a semiconductor thin film on a substrate by using a near-space sublimation technique comprising a semiconductor material supply device, a vacuum deposition chamber, a crucible disposed in the vacuum deposition chamber, and a substrate above the crucible, characterized by:
  • the semiconductor material supply device and the crucible are in communication with a conduit, the semiconductor material supply device providing a semiconductor material and a carrier gas, the semiconductor material being carried by the carrier gas through the conduit into the crucible.
  • a feed distributor is provided in the crucible, and the semiconductor material carried by the carrier gas is evenly distributed at the bottom of the crucible through the feed distributor.
  • the feed distributor is a porous manifold that communicates with the porous manifold.
  • a porous gas permeable membrane through which a heatable semiconductor material for sublimation into a gas phase passes together with a carrier gas is fixed on the crucible, and a substrate is disposed above the porous gas permeable membrane, the semiconductor material It is sublimated into a gas phase by heating in a heated crucible, then passed through a porous gas permeable membrane and deposited on the substrate.
  • the semiconductor material supply device includes a carrier gas tank connected to the pipeline, a hopper connected to the pipeline, and a feed control device for controlling the feed rate of the hopper.
  • the invention has the following beneficial effects: carrying the semiconductor material through the channel through the channel to the crucible placed in the vacuum deposition chamber, and directly supplying the semiconductor to the thin film vacuum deposition device continuously or gap without opening the thin film vacuum deposition chamber
  • the material, the semiconductor material carried by the carrier gas is evenly distributed on the bottom of the crucible through the feed distributor, which solves the prior art, as the semiconductor material is deposited on the glass substrate to form a thin film, the capacity of the semiconductor material in the crucible is reduced.
  • the problem of increasing the distance between the glass substrate and the raw material, the uniformity of the film obtained on the same substrate can be effectively controlled, and the uniformity of the formed semiconductor film deposited on the surface thereof is ensured.
  • the function of the gas permeable membrane is to control the semiconductor material that is not sublimated in time, and allow the sublimated vapor phase semiconductor to pass through with the carrier gas, and then deposit on the glass substrate to form a semiconductor film having a thermal conductivity to prevent the vapor phase semiconductor.
  • the condensed deposition in the gas permeable film, and then the voids are blocked, and the powder semiconductor reaching the gas permeable film can also be sublimated into a gas phase in the gas permeable film.
  • the feed rate of the semiconductor material is precisely controlled by the feed control device so that the feed rate of the semiconductor material is just right for the deposition of the film.
  • Figure 1 is a cross-sectional view of a device of the present invention.
  • Figure 2 is a plan view of a porous manifold located within the crucible of the present invention.
  • Figure 3 is a cross-sectional view of an embodiment of a vapor deposition apparatus of the present invention.
  • Figure 4 is a cross-sectional view showing another embodiment of the vapor deposition apparatus of the present invention.
  • Figure 5 is a longitudinal cross-sectional view of a film deposited on a substrate conveyed by a metal conveyor.
  • Fig. 6 is a schematic view showing the structure of another semiconductor material supply device of the present invention. detailed description
  • a semiconductor thin film vacuum deposition apparatus 10 including a semiconductor material supply device 20, a vacuum deposition chamber 14, a structure of a semiconductor material supply device 20, and details of a vacuum deposition chamber 14 will be described later in detail.
  • One way is to place the substrate 60 on top of the crucible 32 until the thickness of the semiconductor film reaches the desired level; another way is to deposit a semiconductor material on the substrate conveyed on the conveyor belt 36 to form a semiconductor film, the substrate along with the metal conveyor belt 36 - Move up.
  • the thin film vacuum deposition apparatus 10 is for depositing a semiconductor film having a special function on the glass substrate 60, for example, a cadmium sulfide and a cadmium telluride film in a cadmium sulfide/cadmium telluride solar cell.
  • a semiconductor film having a special function on the glass substrate 60 for example, a cadmium sulfide and a cadmium telluride film in a cadmium sulfide/cadmium telluride solar cell.
  • substrates and deposition materials can also be used in the apparatus of the present invention.
  • a material which can be sublimated into a gas phase under a certain temperature condition can also be deposited in the vacuum deposition system to form a film, and the substrate used can also be made of a metal material.
  • the thin film vacuum deposition apparatus 10 includes a thermally insulating insulating case 12 having a vacuum deposition chamber 14 therein.
  • the semiconductor material is deposited on the glass substrate 60 in the vacuum deposition chamber 14, and the insulating insulating housing 12 is suitably formed, such as a tungsten halogen lamp. 34. Heating causes the temperature inside the vacuum deposition chamber to be maintained between 400 ° C and 650 ° C.
  • the vapor deposition chamber 14 has a vapor deposition device 30.
  • the vapor deposition device 30 includes a crucible 32 for heating the semiconductor material to sublime into a gas phase.
  • the crucible 32 is provided with a feed distributor for uniformly distributing the semiconductor material.
  • the material distributor may be a porous manifold 37, or other dispensers having the function of uniformly distributing semiconductor materials described in the prior art.
  • a porous manifold 37 is used, and the vapor deposition device 30 further includes a fixed
  • the porous gas permeable membrane 40 is heated on the crucible 32, and the substrate 60 is disposed above the porous gas permeable membrane 40.
  • the substrate 60 and the gas permeable membrane 40 are separated by a spacer 35 made of a heat insulating material.
  • the interval is
  • the sheet 35 is made of a heat insulating material ceramic for separating the gas permeable membrane 40 and the substrate 60 to ensure that the temperature of the gas permeable membrane is higher than The temperature of the substrate.
  • the spacing between the gas permeable membrane 40 and the glass substrate is 2 to 30 mm, with 10 mm being most preferred.
  • the porous manifold 37 is made of stainless steel or graphite or silicon carbide material.
  • the semiconductor material is sublimated into a gas phase in a heated crucible and then passed through a porous gas permeable membrane and deposited on the substrate. During vapor deposition, the semiconductor material in the crucible is heated to a temperature above about the glass substrate by increasing the power of the underlying tungsten halogen lamp, between 500 ° C and 750 ° C.
  • the semiconductor material supply device 20 and the crucible 32 are connected by a conduit 38 that communicates with the porous manifold 37.
  • the semiconductor material supply device 20 provides a semiconductor material and a carrier gas.
  • the semiconductor material is uniformly distributed by the carrier gas through the conduit 38 through the porous manifold 37.
  • the crucible 32 is heated to sublimate the semiconductor material into a vapor phase and deposited on the substrate 60.
  • the semiconductor material sublimed into the vapor phase passes through the heated porous gas permeable membrane together with the carrier gas, and is then deposited on the substrate having a lower surface temperature than the vapor phase semiconductor.
  • the solid phase semiconductor material which is not sublimated into the gas phase in time is sublimated into a gas phase in the heated porous gas permeable membrane, and the solid phase semiconductor material is blocked by the porous gas permeable membrane and cannot be deposited on the glass substrate.
  • the carrier gas is one or a mixture of two or more of nitrogen, argon and helium, and the semiconductor material is preferably in the form of a powder.
  • the gas permeable membrane 40 is supported by the L-shaped frame 31 and fixed to the top of the crucible 32.
  • the L-frame is preferably made of an insulating ceramic material such as alumina.
  • the optimal gas permeable membrane structure is that only the carrier gas and the vapor phase semiconductor pass, and the semiconductor material that is not sublimated in time is controlled to pass, and the temperature of the gas permeable membrane 40 can be embedded in the gas permeable membrane 40 by a heating device.
  • the gas permeable membrane 40 itself is used as a heating element. When the gas permeable membrane 40 itself acts as a heating element, a voltage can be applied across the gas permeable membrane 40 to raise the temperature by 2-5 degrees above the temperature of the crucible 32.
  • the vapor phase semiconductor does not condense on the surface and pores of the gas permeable membrane and does not block the void.
  • ⁇ 32 is best made of graphite
  • the gas permeable membrane 40 can be made of a material selected from the group consisting of graphite, silicon carbide, silicon nitride, and boron carbide, or a heatable graphite material, and heatable graphite as a material.
  • the resulting gas permeable membrane 40 has a good thermal conductivity advantage.
  • the pores in the gas permeable membrane 40 are arranged in a regular arrangement.
  • the pore size is preferably in the order of micrometers, and the porosity of the gas permeable membrane is at least 25%.
  • the gas permeable membrane 40 has a thickness of 1 to 10 mm. In the present embodiment, the gas permeable membrane has a thickness of 2 mm.
  • the semiconductor material supply device 20 includes a carrier gas canister 22 coupled to the conduit 38, a hopper 28 in communication with the conduit 38, and a feed control device for controlling the feed rate of the hopper.
  • the carrier gas tank 22 generates a carrier gas
  • the semiconductor material supply device 20 further includes a rotary screw 26 with a driver 27, a vibrating feeder or a combination of both, the feed rate of the semiconductor material is rotated by a rotary screw in the hopper 28.
  • the rotational speed of 26 is precisely controlled, and another method of controlling the feed rate is achieved by changing the vibration frequency of the vibrating feeder.
  • the feed control device includes a rotary screw 26 disposed in the hopper, and a drive 27 that drives the rotary screw 26 to rotate at a constant speed.
  • the screw 26 is controlled by the driver 27 to feed the powder semiconductor 21 into the pipe 38 at a certain rotational speed. And delivered to the porous manifold 37 in the vapor depositor 30.
  • the flow rate of the carrier gas is controlled by an adjustable valve 24 to maintain the carrier gas at a flow rate to ensure that the semiconductor material 21 is delivered into the crucible 32 at the desired rate.
  • the best way to feed is to control the rate at which the semiconductor material is carried by the carrier gas into the crucible 32 to satisfy the semiconductor deposition. Need, to ensure that neither semiconductor material accumulates in ⁇ 32, nor is there any shortage.
  • the material supply device 20 is also mounted with a viewing window 23 on the conduit 38 for viewing the transport of the semiconductor material.
  • the porous manifold 37 includes several parallel passages 1, 1 ', 2, 2', 3, 3', 4, 4', 5, etc. and two inlet conduits 34 and 34 at both ends.
  • the width of these parallel passages is preferably between 5 and 10 mm
  • the inlet duct 34 is connected to channels 1, 2, 3, the inlet duct 34, the ports ⁇ , 2, 3, etc., the inlet ducts 34 and 34, respectively
  • the carrier gas from the carrier gas tank feeds the powdered semiconductor through the inlet 33 to the porous manifold 37 in the vapor deposition vessel 30 and then evenly distributed within the crucible 32; the other material supply device 20' will also carry the gas and powder.
  • the semiconductor material is delivered into the crucible 32 through the inlet 33'.
  • the vapor deposition device 30 shown in Fig. 1 has an L-shaped frame support made of a ceramic material. Body, the gas permeable membrane 40 is secured to the top of the crucible 32;
  • Figure 3 illustrates another embodiment 30' of the vapor deposition apparatus 30 having a pair of supports made of graphite disposed within the crucible 32. The material 39 is used to support the gas permeable membrane 40.
  • the embodiments of the two vapor deposition devices 30 and 30' are both suitable for depositing a semiconductor film on a glass substrate in a vacuum deposition chamber in a gap or continuous manner. In all embodiments, the size of the cornice must match the size of the substrate.
  • Figure 4 shows an embodiment of a vapor deposition device 30", which is used for vapor deposition 30"
  • the transfer device for transporting and supporting the glass substrate 60, the metal transfer belt 36 of the transfer device can continuously transfer the glass substrate for depositing the semiconductor film, the glass substrate 60 is placed directly on the metal transfer belt 36, the metal transfer belt 36 and the crucible 32 is separated by a spacer 35 which is made of a ceramic material having a low coefficient of friction. Since there is no gap between the metal belt 36 and the crucible 32, there is no gas phase semiconductor leakage on both sides of the crucible 32.
  • the carrier gas flows out of the gas permeable membrane 40 and flows out from the other ends of the crucible 32, reducing the gap between the glass substrate 60 and the spacer 35, and reducing the space between the adjacent two glass substrates 60.
  • the gap between the glass substrate 60 and the spacer 35 is preferably 0.2 to 0.5 mm, and with the metal conveyor 36, the glass substrate can be removed from the vacuum deposition chamber 14 In and out, the vaporizer 30" inner crucible is the same size as or smaller than the glass substrate.
  • the metal conveyor 36 can also be placed on the spacer 35 in the embodiment shown in FIG.
  • a preferred embodiment of the semiconductor material feed and semiconductor thin film vacuum deposition apparatus is: when the size of the cornice is the same as the glass substrate, the powdered semiconductor material is delivered to the porous manifold 37 in the vapor depositor 30 and into the crucible 32.
  • the semiconductor material is sublimated into a gas phase, and after passing through the heated gas permeable membrane 40 on the crucible 32, the semiconductor film is deposited on the glass substrate which has been transported by the metal conveyor 36 to the top of the crucible 32 to form a semiconductor thin film.
  • the substrate 60 on which the semiconductor film is deposited is removed from the crucible 32 by the metal transfer belt 36, while the rear glass substrate on the metal transfer belt 36 is rapidly moved to the top of the crucible 32, the gas phase in the crucible 32.
  • the semiconductor passes through the gas permeable film 40 and is then deposited on the surface of the glass substrate 60.
  • the loss of the vapor-phase semiconductor material depends on the moving speed of the metal conveyor belt 36 and the spatial distance between two adjacent glass substrates, and another method of vacuum deposition of the semiconductor film is as shown in FIG.
  • the glass substrate 60 on the metal transfer belt 36 is moved at a constant speed in the direction of the arrow A in Fig. 5, while the sublimated vapor phase semiconductor in the crucible 32 is accompanied.
  • the carrier gas is uniformly deposited on the surface of the glass substrate through the gas permeable film 40 to form a semiconductor film.
  • the semiconductor material consumed during the deposition process is transported by the carrier gas from the hopper 28 outside the vacuum deposition chamber to the crucible 32 at a rate such that the distance between adjacent glass substrates can be adjusted as desired.
  • the distance between adjacent glass substrates in the thin film vacuum deposition chamber is controlled within 1 cm.
  • Figure 6 shows another embodiment of a material supply device 20 for depositing a semiconductor film on a glass substrate.
  • the powdered semiconductor material 21 in the hopper 28 is transported through the rotary screw 26 into the channel 38 and finally into the vapor deposition device 30.
  • the feed control device includes a container 29 containing a vibratory feeder and a shutter 52.
  • the tube 38 is provided with a plurality of holes 42 for the semiconductor material to flow into the container 29, and the shutter 52 blocks all or part of the holes.
  • the container 29 is connected to the hopper 28 through another pipe (not shown in FIG. 6).
  • the feed rate of the semiconductor material can be This is achieved by the following example:
  • the shutter 52 blocks a portion of the aperture 42 located below it, a portion of the semiconductor material emerging from the hopper 28 enters the container 29 through the aperture 42 that is not blocked by the interlayer 52, while the remainder is carried by The gas is carried to the manifold 37, and after the semiconductor 21 accumulates in the container to a certain amount, it is returned to the hopper by the vibrating feeder. 28, or use a frequency vibrator 25 to deliver into the channel 38.
  • the rate at which the semiconductor material is supplied to the vapor deposition device 30 is further accurately controlled. With the aid of the observation window 23, it can be observed that the semiconductor material is mounted with the vibrating feeder 29

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  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
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  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Description

一种采用近空间升华技术在衬底沉积形成半导体
薄膜的方法和装置 技术领域
本发明涉及到一种沉积半导体薄膜的技术，特别是涉及一种采用 近空间升华技术在衬底沉积形成半导体薄膜的方法和装置。
发明背景
目前在硫化镉 /碲化镉太阳能电池制造领域， 一种在近空间内升 华沉积得到高质量碲化镉的方法正引起人们的关注，应用这种方法得 到的硫化镉 /碲化镉太阳能电池的转化率高达 16. 8%, 是目前世界最 高的 (参见 X. Wu et al. , 17th European Photovoltaic Solar Energy Conversion Conference, Munich, Germany, 22-26 Oct. 2001, II， 995-1000) 。 近空间升华过程是气相沉积方法中的一种， 形成碲化镉 薄膜的材料 （以下简称原材料） 被放置到一个以石墨制成的坩埚内， 原材料在石墨坩埚内近空间升华后沉积在玻璃衬底上形成薄膜，该玻 璃衬底放置在坩埚的顶部，在传热性能良好的石墨坩埚和玻璃衬底之 间用耐热绝缘垫片隔开，石墨坩埚内原材料表面与玻璃衬底之间的距 离大约为 0. 5-5厘米， 这样， 原材料在一定的温度下经过升华后变成 气相， 然后沉积在玻璃衬底上形成一层半导体薄膜。但是， 以前一般 传统的做法是预先在常温下直接将原材料碲化镉填加到坩埚内，然后 近空间升华沉积形成碲化镉薄膜， 按照这种传统的做法， 随着碲化镉 在玻璃衬底上沉积形成薄膜， 坩埚内的碲化镉的容量就随之减少， 导 致玻璃衬底和原材料之间距离的增大， 这样一来， 碲化镉薄膜的显微 结构和光电性能也随时间发生改变。 根据美国 4207119号， 6444043号和 7220321号专利的描述， 在 他们采用的近空间升华过程中， 首先在沉积前将原材料填加到坩埚 内， 填加的量为坩埚可承受的最大容量， 为了补充在薄膜沉积中消耗 的原材料， 就需要向坩埚内定期的重复填加原材料， 然而如此操作存 在安全隐患， 因为受热的容器中含有有毒气体， 在沉积过程中重复打 开真空腔填加原材料， 就会有有毒气体散发出来， 因此就必须先冷却 设备才能填加原材料， 但是， 这样一来， 为了填加原材料到坩埚内， 碲化镉薄膜在玻璃衬底上的沉积过程势必被打断， 根据美国 7220321 号专利的记载， 在实际操作中， 因为形成碲化镉薄膜只需要少量的碲 化镉， 所以填加满一坩埚就足以为碲化镉沉积提供几天的原材料， 尽 管如此， 随着碲化镉薄膜在玻璃衬底上的沉积， 坩埚内剩下的碲化镉 量也随时间减少， 玻璃衬底和原材料之间的距离就增大了， 导致多晶 碲化镉薄膜的形态和光电性能发生变化。 随着碲化镉薄膜的反复沉 积，薄膜厚度和质量的重现性逐渐下降，因此，当使用大面积衬底时， 由于同一坩埚内原材料的长时间重复使用，在同一衬底上所得到的薄 膜的均匀度就无法控制了， 另外， 留在坩埚内的碲化镉微粒的显微结 构和形态随着沉积时间的变化也会发生改变，这样就进一歩增加了薄 膜均匀度和质量的不确定性。
发明内容
本发明所要解决的技术问题是：提供一种无需打开薄膜真空沉积 腔而直接向薄膜真空沉积装置输送半导体材料的方法和装置，从而连 续或间隙供应半导体材料。
为了解决上述技术问题， 本发明采用以下技术方案：
一种采用近空间升华技术在衬底沉积形成半导体薄膜的方法，包 括： 1 ) 将半导体材料填加到坩埚内： 用运载气体携带半导体材料通过通 道到达置于薄膜真空沉积腔内的坩埚；
2 ) 加热坩埚使半导体材料受热升华成气相并沉积在衬底上。
提供一进料分配器， 由运载气体携带的半导体材料通过该进料分 配器均匀地分布在坩埚底部。
所述进料分配器是多孔歧管。
所述多孔歧管由不锈钢或石墨或碳化硅材料制成。
所述的运载气体是氮气、氩气、氦气中的一种或者两种以上的混 合气体。
其中歩骤 2 ) 进一歩包括： 升华成气相的半导体材料同运载气体 一起穿过加热的多孔透气膜，然后沉积在表面温度比气相半导体温度 低的衬底上，没有及时升华成气相的固相半导体材料在加热多孔透气 膜内进一歩升华成气相，固相半导体材料被多孔透气膜阻挡而不能沉 积在玻璃衬底上。
所述透气膜加热至高于坩埚温度的 2〜5°C。
一种采用近空间升华技术在衬底沉积形成半导体薄膜的装置，包 括一个半导体材料供应装置、一个真空沉积腔、置于真空沉积腔内的 坩埚和位于坩埚上方的衬底， 其特征在于： 所述半导体材料供应装置 和坩埚由管道连通，所述半导体材料供应装置提供半导体材料和运载 气体， 半导体材料由运载气体携带经管道进入坩埚内。
所述坩埚内设有进料分配器， 由运载气体携带的半导体材料通过 进料分配器均匀地分布在坩埚底部。
所述进料分配器是多孔歧管， 管道连通多孔歧管。
所述坩埚上固定有可加热的、供升华成气相的半导体材料同运载 气体一起穿过的多孔透气膜， 多孔透气膜上方设置衬底， 半导体材料 在加热坩埚中受热升华成气相， 然后穿过多孔透气膜并沉积在衬底 上。
所述的半导体材料供给装置包括一个与管道相连的运载气体罐、 一个与管道连通的料斗和一个控制料斗进料速度的进料控制装置。
本发明与现有技术相比具有以下有益效果：用运载气体携带半导 体材料通过通道到达置于真空沉积腔内的坩埚内，无需打开薄膜真空 沉积腔而直接向薄膜真空沉积装置连续或间隙供应半导体材料，由运 载气体携带的半导体材料通过进料分配器均匀地分布在坩埚底部，解 决了现有技术中存在的随着半导体材料在玻璃衬底上沉积形成薄膜， 坩埚内半导体材料容量随之减少，导致玻璃衬底和原材料之间距离增 大的问题， 在同一衬底上所得到的薄膜的均匀度能有效控制， 保证在 其表面沉积形成的半导体薄膜的均匀性。透气膜的作用是将未及时升 华的半导体材料控制在坩埚内，而允许已升华的气相半导体同运载气 体一道通过， 然后沉积在玻璃衬底上形成半导体薄膜， 透气膜具有导 热性，防止气相半导体在透气性膜内冷凝沉积，然后堵住空隙，另外， 到达透气性膜的粉末半导体也能在透气性膜中进一歩升华成气相。半 导体材料的进料速度由进料控制装置精确控制，使半导体材料的进料 速度正好满足薄膜沉积的需要。
附图说明
图 1是本发明装置的一种截面剖视图。
图 2是本发明中位于坩埚内的多孔歧管平面图。
图 3是本发明气相沉积器一种实施例的截面剖视图。
图 4是本发明气相沉积器另一种实施例的截面剖视图。
图 5是在由金属传送带输送的衬底上沉积薄膜的纵向剖视图。
图 6是本发明另一种半导体材料供应装置的结构示意图。 具体实施方式
参见图 1， 半导体薄膜真空沉积装置 10包括半导体材料供应装 置 20、真空沉积腔 14， 半导体材料供应装置 20的结构和真空沉积腔 14 的细节都在后文有详细描述。 尝试了用两种不同的方式在玻璃衬 底 60上沉积半导体材料形成半导体薄膜。一种方式是将衬底 60安放 在坩埚 32的顶部直到半导体薄膜的厚度达到要求； 另一种方式是半 导体材料沉积在传送带 36上输送的衬底上形成半导体薄膜， 衬底随 金属传送带 36—起移动。
薄膜真空沉积装置 10用于在玻璃衬底 60上沉积具有特殊功能的 半导体薄膜， 例如， 硫化镉 /碲化镉太阳能电池中的硫化镉和碲化镉 薄膜。但是， 需要指出的是， 其它衬底和沉积材料也可以在本发明装 置中使用。例如， 在一定温度条件下能够升华成气相的材料也可以在 该真空沉积系统中沉积，形成薄膜，所用的衬底也可以采用金属材料。
薄膜真空沉积装置 10包括一个隔热绝缘壳 12， 内有一个真空沉 积腔 14， 半导体材料在真空沉积腔 14内沉积到玻璃衬底 60上， 隔 热绝缘壳 12用适当方式， 如卤钨灯 34， 加热使得真空沉积腔里面的 温度保持在 400°C到 650°C之间。真空沉积腔 14内有一个气相沉积器 30， 气相沉积器 30包括一个用来加热半导体材料使之升华成气相的 坩埚 32， 坩埚 32内设有用于均匀地分布半导体材料的进料分配器， 进料分配器可以是多孔歧管 37， 也可以是现有技术中描述的其它具 有均匀分布半导体材料功能的分配器， 本实施例中采用是多孔歧管 37，气相沉积器 30还包括一个固定在坩埚 32上可加热的多孔透气膜 40， 多孔透气膜 40上方设置衬底 60， 衬底 60和透气膜 40用绝热材 料制成的间隔片 35分隔开， 在图 1的实施例中， 间隔片 35由绝热材 料陶瓷制成， 用来分隔透气膜 40和衬底 60， 保证透气膜的温度高于 衬底的温度。 透气膜 40和玻璃衬底之间的间距为 2〜30毫米， 其中 以 10毫米为最佳。 多孔歧管 37由不锈钢或石墨或碳化硅材料制成。 半导体材料在加热坩埚中受热升华成气相，然后穿过多孔透气膜并沉 积在衬底上。在气相沉积过程中， 在坩埚中的半导体材料通过增加坩 埚下面卤钨灯的功率被加热到约高于玻璃衬底的温度， 在 500 °C到 750°C之间。
半导体材料供应装置 20和坩埚 32由管道 38连通，管道 38连通 多孔歧管 37， 半导体材料供应装置 20提供半导体材料和运载气体， 半导体材料由运载气体携带经管道 38通过多孔歧管 37均匀地分布在 坩埚 32底部。加热坩埚 32使半导体材料受热升华成气相并沉积在衬 底 60上， 升华成气相的半导体材料同运载气体一起穿过加热的多孔 透气膜， 然后沉积在表面温度比气相半导体温度低的衬底上， 没有及 时升华成气相的固相半导体材料在加热多孔透气膜内进一歩升华成 气相， 固相半导体材料被多孔透气膜阻挡而不能沉积在玻璃衬底上。 运载气体是氮气、 氩气、 氦气中的一种或者两种以上的混合气体， 半 导体材料以粉末状为最佳。已经尝试了用两种不同的方式将半导体材 料引入薄膜真空沉积腔内的坩埚 32， 其中一种方式是无需打开真空 沉积腔在不中断半导体材料连续在衬底沉积薄膜的情况下，用运载气 体连续不断地将半导体材料引入坩埚 32， 半导体材料的进料速度正 好满足薄膜沉积的需要；另外一种方式是在无需打开真空沉积腔的情 况下定时地用运载气体将半导体材料引入坩埚 32。
透气膜 40用 L型框架 31做支撑并固定在坩埚 32顶部的。 该 L 型框架最好采用绝热陶瓷材料制成， 例如氧化铝。最佳的透气膜结构 是仅让运载气体和气相半导体通过，控制未及时升华的半导体材料不 让其通过，透气膜 40的温度可以通过在透气膜 40中嵌一个加热装置 或者将透气膜 40本身作为一个发热元件，当透气膜 40本身作为一个 发热元件时， 可以在透气膜 40两端施加电压将温度升高， 高出坩埚 32 的温度 2-5度， 这样可以保证气相半导体不会在透气膜的表面和 孔隙内凝结， 不堵住空隙。 坩埚 32用石墨制造为最佳， 透气膜 40可 以采用透气膜选自石墨、碳化硅、氮化硅、碳化硼中的一种材料制造， 也可采用可加热石墨材料， 用可加热石墨作为材料制成的透气膜 40 具有良好的导热性能优势。 透气膜 40内的孔隙以一定的规则排列分 布， 孔隙的尺寸以微米级为最佳， 透气膜的孔隙率至少在 25%以上， 仅供运载气体和气相半导体通过，而运载气体携带的还未升华的半导 体粉末则被截留在坩埚 32内直到升华成气相， 未被截留部分则在透 气膜 40内继续升华成气相。透气膜 40的厚度为 1〜10毫米， 目前的 实施例中， 透气膜的厚度为 2毫米。
半导体材料供给装置 20包括一个与管道 38相连的运载气体罐 22、一个与管道 38连通的料斗 28和一个控制料斗进料速度的进料控 制装置。运载气体罐 22产生运载气体， 半导体材料供应装置 20还包 括带驱动器 27的旋转螺杆 26、 振动加料器或者是由它们两者组成的 组合体，半导体材料的进料速度由料斗 28中的旋转螺杆 26的转动速 度精确控制，另一种控制进料速度的方法是通过改变振动加料器的振 动频率而得到实现。本实施例中： 进料控制装置包括设置在料斗内的 旋转螺杆 26、 驱动旋转螺杆 26 以一定速度旋转的驱动器 27， 螺杆 26由驱动器 27控制， 以一定旋转速度将粉末半导体 21输送入管道 38， 并输送至气相沉积器 30内的多孔歧管 37里。运载气体的流速由 可调阀门 24控制， 将运载气体维持在一定的流量， 保证半导体材料 21 以预期的速度被输送进入坩埚 32。 最佳的供料方式是： 控制半导 体材料由运载气体携带至坩埚 32内的速度， 使之满足半导体沉积的 需要， 保证既没有半导体材料在坩埚 32内积聚， 也没有不足的情况 发生。根据图 1所示， 材料供应装置 20还在管道 38上安装有一个观 察窗口 23， 用来观察半导体材料的输送情况。
如图 2所示， 多孔歧管 37包括几个平行的通道 1，1 ' , 2, 2 ' ，3， 3 ' ，4， 4 ' ，5等和位于两端的两个入口管道 34和 34， ， 这些平行通 道的宽度在 5-10mm之间为最佳， 入口管道 34连接 1， 2 , 3等通道， 入口管道 34， 连接 Γ ， 2， ， 3， 等通道， 入口管道 34和 34， 分别 有入口 33和 33， ， 通过入口 33， 33 ' 和气相沉积器 30两端的管道 38， 38 ' ， 坩埚 32内的多孔歧管 37就同半导体材料供应装置 20相 连。 从运载气体罐出来的运载气体将粉末半导体通过入口 33送至气 相沉积器 30内的多孔歧管 37， 然后均匀地分布在坩埚 32内； 另外 一个材料供应装置 20 ' 也同样将运载气体和粉末半导体材料通过入 口 33 ' 输送至坩埚 32内。 这样， 运载气体和其所携带的粉末半导体 在坩埚 32底部达到均匀分布的目的， 保证了透气膜 40和玻璃衬底 6 0之间的气相半导体在到达玻璃衬底 60前在整个玻璃衬底表面得到 均匀地分布， 保证在其表面沉积形成的半导体薄膜的均匀性。
图 1， 3， 4分别图示了气相沉积器 30， 30 ' ， 30 " 的不同实施 示例。 具体来说， 图 1所示的气相沉积器 30有一个由陶瓷材料制成 的 L型框架支撑体， 将透气膜 40固定在坩埚 32的顶部； 图 3图示了 气相沉积器 30的另一种实施例 30 ' ， 气相沉积器 30 ' 有一对安放 在坩埚 32内的由石墨制成的支撑物 39， 用来支撑透气膜 40。这两种 气相沉积器 30和 30 ' 的实施例都适用于在真空沉积腔内以间隙式或 连续式方法在玻璃衬底上沉积半导体薄膜，在这两种实施例中坩埚口 的尺寸大小都必须与衬底的尺寸相匹配。
图 4示出了气相沉积器 30 " 的实施例， 气相沉积器 30 "有用来 传输和支撑玻璃衬底 60的传送装置， 传送装置的金属传送带 36， 可 以连续不断地传送用以沉积半导体薄膜的玻璃衬底， 玻璃衬底 60直 接放置在金属传送带 36上， 金属传送带 36和坩埚 32之间由间隔片 35隔开， 该间隔片 35以具有低摩擦系数的陶瓷材料制成， 由于金属 传送带 36和坩埚 32之间没有空隙， 因此坩埚 32的两边都不会有气 相半导体泄漏。运载气体穿过透气性膜 40后从坩埚 32的另外两端流 出， 减小玻璃衬底 60和间隔片 35之间的间隙， 以及减小相邻两块玻 璃衬底 60之间的空间， 可以使气相半导体的流失降到最低， 玻璃衬 底 60和间隔片 35之间的间隙在 0. 2-0. 5 mm为最佳， 有了金属传送 带 36， 玻璃衬底就可以从真空沉积腔 14传送进出， 气相沉积器 30 " 内坩埚口的尺寸大小与玻璃衬底相同或比玻璃衬底小。 金属传送带 36也可以安置在如图 1所示实施例中的间隔片 35上。
半导体材料进料和半导体薄膜真空沉积装置的最佳实施方案是： 当坩埚口的大小同玻璃衬底一致时，粉末半导体材料被输送至气相沉 积器 30中的多孔歧管 37， 并进入坩埚 32内， 半导体材料在此升华 成气相， 气相半导体通过位于坩埚 32上的加热透气膜 40后， 在已被 金属传送带 36传送到坩埚 32顶部的玻璃衬底上沉积形成半导体薄 膜， 沉积结束后， 已沉积有半导体薄膜的衬底 60就被金属传送带 36 从坩埚 32上移开， 同时， 在金属传送带 36上的后面一块玻璃衬底就 被迅速地移至坩埚 32的顶部，在坩埚 32中的气相半导体穿过透气性 膜 40然后沉积在玻璃衬底 60表面上。在这个过程中， 气相半导体材 料的流失取决于金属传送带 36的移动速度和相邻二块玻璃衬底之间 的空间距离，另一种半导体薄膜真空沉积的实施方法是当图 4所示的 坩埚 32和玻璃衬底 60有一方向的尺寸不一致时， 如坩埚 32沿金属 传送带 36方向的长度小于玻璃衬底 60沿金属传送带 36方向的长度， 如图 5所示， 在这一实施例中， 金属传送带 36上的玻璃衬底 60沿着 图 5中箭头 A的方向以一定的速度移动， 与此同时， 在坩埚 32中升 华的气相半导体随同运载气体穿过透气性膜 40均匀地沉积在玻璃衬 底的表面形成半导体薄膜。 同样， 沉积过程中消耗的半导体材料由运 载气体从薄膜真空沉积腔外的料斗 28内以一定的速度输送至坩埚 32 内， 相邻二块玻璃衬底之间的距离根据需要可以调节。为了减少气相 半导体材料的流失，在薄膜真空沉积腔中相邻二块玻璃衬底之间的距 离被控制在 1厘米以内。
图 6 所示的是用于玻璃衬底上沉积半导体薄膜的材料供应装置 20的另一种实施示例， 料斗 28里的粉末半导体材料 21通过旋转螺 杆 26输送进入通道 38， 最后进入气相沉积器 30， 进料控制装置包括 一个装有振动给料器的容器 29和闸板 52， 管道 38上设有若干个用 于半导体材料流入到容器 29的孔 42， 闸板 52可将所有或部分孔挡 住， 容器 29通过另一管道（图 6里没有图示）与料斗 28相连， 当半 导体薄膜沉积装置 10需要的半导体材料量不能通过改变旋转螺杆 26 的转速来实现时， 半导体材料的进料速度可通过下述实例得到实现： 当闸板 52挡住位于它下面的一部分孔 42时， 从料斗 28出来的半导 体材料一部分通过未被间板 52挡住的孔 42进入容器 29内， 而其余 部分则由运载气体携带至歧管 37， 半导体 21在容器内积聚到一定量 后， 由振动给料器送返至料斗 28， 或者用频率振动器 25输送到通道 38里。 这样， 向气相沉积器 30供应半导体材料的速率得到进一歩精 确控制。 借助观察窗 23可以观察半导体材料在安装有振动给料器 29

Claims

权 利 要 求 书
1、 一种采用近空间升华技术在衬底沉积形成半导体薄膜的方法， 包 括：
1 ) 将半导体材料填加到坩埚内： 用运载气体携带半导体材料通过通 道到达置于薄膜真空沉积腔内的坩埚；
2 ) 加热坩埚使半导体材料受热升华成气相并沉积在衬底上。
2、 如权利要求 1所述的沉积形成半导体薄膜的方法， 其特征在于： 提供一进料分配器， 由运载气体携带的半导体材料通过该进料分配器 均匀地分布在坩埚底部。
3、 如权利要求 2所述的沉积形成半导体薄膜的方法， 其特征在于： 所述进料分配器是多孔歧管。
4、 如权利要求 3所述的沉积形成半导体薄膜的方法， 其特征在于： 所述多孔歧管由不锈钢或石墨或碳化硅材料制成。
5、 如权利要求 1或 2所述的沉积形成半导体薄膜的方法， 其特征在 于： 所述的运载气体是氮气、 氩气、 氦气中的一种或者两种以上的混 合气体。
6、 如权利要求 1或 2所述的沉积形成半导体薄膜的方法， 其特征在 于其中歩骤 2 )进一歩包括： 升华成气相的半导体材料同运载气体一 起穿过加热的多孔透气膜，然后沉积在表面温度比气相半导体温度低 的衬底上，没有及时升华成气相的固相半导体材料在加热多孔透气膜 内进一歩升华成气相，固相半导体材料被多孔透气膜阻挡而不能沉积 在玻璃衬底上。
7、 如权利要求 6所述的沉积形成半导体薄膜的方法， 其特征在于： 其中多孔透气膜的厚度为 1〜10毫米。
8、 如权利要求 6所述的沉积形成半导体薄膜的方法， 其特征在于： 所述多孔透气膜选自石墨、 碳化硅、 氮化硅、 碳化硼中的一种材料制 造。
9、 如权利要求 6所述的沉积形成半导体薄膜的方法， 其特征在于： 所述透气膜加热至高于坩埚温度的 2〜5°C。
10、 如权利要求 9所述的沉积形成半导体薄膜的方法， 其特征在于： 所述透气膜通过施加在其两端的电压或者在透气膜内嵌入的一个加 热装置来加热。
11、一种采用近空间升华技术在衬底沉积形成半导体薄膜的装置， 包 括一个半导体材料供应装置（20)、 一个真空沉积腔（14)、 置于真空 沉积腔内的坩埚 （32 ) 和位于坩埚上方的衬底 （60)， 其特征在于： 所述半导体材料供应装置（20 ) 和坩埚 （32 ) 由管道（38 ) 连通， 所 述半导体材料供应装置（20 )提供半导体材料和运载气体， 半导体材 料由运载气体携带经管道 (38)进入坩埚 (32)内。
12、如权利要求 11所述的沉积形成半导体薄膜的装置， 其特征在于: 所述坩埚 (32)内设有进料分配器， 由运载气体携带的半导体材料通过 进料分配器均匀地分布在坩埚（32)底部。
13、如权利要求 12所述的沉积形成半导体薄膜的装置， 其特征在于: 所述进料分配器是多孔歧管 （37)， 管道 (38)连通多孔歧管 （37)。
14、如权利要求 11或 12所述的沉积形成半导体薄膜的装置， 其特征 在于： 所述坩埚 (32)上固定有可加热的、供升华成气相的半导体材料 同运载气体一起穿过的多孔透气膜 （40)， 多孔透气膜 （40 ) 上方设 置衬底 （60 )， 半导体材料在加热坩埚 （32 ) 中受热升华成气相， 然 后穿过多孔透气膜 （40 ) 并沉积在衬底 （60 ) 上。
15、如权利要求 14所述的沉积形成半导体薄膜的装置， 其特征在于: 所述多孔透气膜 （40 ) 中嵌入一个加热装置。 16、如权利要求 14所述的沉积形成半导体薄膜的装置， 其特征在于: 所述多孔透气膜 （40) 本身为一个发热元件。
17、如权利要求 14所述的沉积形成半导体薄膜的装置， 其特征在于: 所述的多孔透气膜（40) 由一个用绝热材料制成的 L型框架（31)支 撑在坩埚 （32) 上。
18、如权利要求 14所述的沉积形成半导体薄膜的装置， 其特征在于: 所述的多孔透气膜 （40) 和衬底 （60) 之间的间距为 2〜30毫米。
19、如权利要求 11或 12所述的沉积形成半导体薄膜的装置， 其特征 在于： 所述的半导体材料供给装置（20)包括一个与管道（38)相连 的运载气体罐 （22)、 一个与管道 （38) 连通的料斗 （28) 和一个控 制料斗进料速度的进料控制装置。
20、如权利要求 19所述的沉积形成半导体薄膜的装置， 其特征在于: 所述的进料控制装置包括设置在料斗 （28) 内的旋转螺杆 （26)、 驱 动旋转螺杆 （26) 以一定速度旋转的驱动器 （27)。
21、如权利要求 19所述的沉积形成半导体薄膜的装置， 其特征在于: 所述的进料控制装置包括一个装有振动给料器的容器 （29) 和闸板
(52),所述管道（ 38 )上设有若干个用于半导体材料流入到容器（ 29 ) 的孔 （42)， 所述间板 （52) 可将所有或部分孔 （42) 挡住， 所述容 器 （29) 通过另一管道与料斗 （28) 相连。
22、如权利要求 11或 12所述沉积形成半导体薄膜的装置， 其特征在 于： 所述衬底 （60) 放置在传送装置的传送带 （36) 上。
3
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WO2012175315A1 (de) * 2011-06-22 2012-12-27 Aixtron Se Vorrichtung zur aerosolerzeugung und abscheiden einer lichtemittierenden schicht
WO2013070649A1 (en) * 2011-11-08 2013-05-16 Primestar Solar, Inc. High emissivity distribution plate in vapor deposition apparatus and processes
CN102443767A (zh) * 2011-12-08 2012-05-09 上海太阳能电池研究与发展中心 用于太阳电池薄膜沉积的介质气体辅助气相输运沉积装置

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