WO2010112170A1 - Magnetron-beschichtungsmodul sowie magnetron-beschichtungsverfahren - Google Patents
Magnetron-beschichtungsmodul sowie magnetron-beschichtungsverfahren Download PDFInfo
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- WO2010112170A1 WO2010112170A1 PCT/EP2010/001871 EP2010001871W WO2010112170A1 WO 2010112170 A1 WO2010112170 A1 WO 2010112170A1 EP 2010001871 W EP2010001871 W EP 2010001871W WO 2010112170 A1 WO2010112170 A1 WO 2010112170A1
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- Prior art keywords
- magnetron
- coating
- substrate
- target
- sputtering
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
Definitions
- the invention relates to a new basic technology for the magnetron sputtering of ceramic layers, in particular for optical applications.
- the new concept allows the construction of magnetron sputter sources, which compared to the known methods, such as the reactive DC, MF or RF magnetron sputtering or the magnetron sputtering of ceramic targets significantly improved precision in the deposition of ceramic layers with exact defined rate and homogeneity and with very good Re'produzierbar- allows.
- Magnetron sputtering sources have proven to be extremely efficient coating tools in recent years to produce thin film systems on an industrial scale.
- coating processes are relevant for industrial production which inherently work with a certain stability, such as magnetron sputtering of ceramic targets or reactive magnetron sputtering under reactive excess in compound mode.
- control loops are used which make it possible to maintain the coating properties even over long production periods. Usually need this increases with the ⁇ accuracy aimed the optical properties of the layer system and the number of individual layers in the layer system sharply.
- the desired accuracy of the optical properties of the layer system is thereby i. d. R. defined by permissible deviations between transmission and reflection spectra of a layer system design and the deposited layer system.
- the conditions are simpler.
- the ceramic target already approximately provides the correct stoichiometry, but it is also necessary to add reactive gas to the sputtering gas in order to arrive at stoichiometric and highly transparent layers.
- This addition of reactive gas also leads to the sputtering of ceramic targets that coating rate and homogeneity vary due to pressure fluctuations and long-term drift of the target state, which requires the metrological detection of these processes and the readjustment of the system control variables. From the point of view of process stability, the addition of reactive gas during sputtering of ceramic targets is thus undesirable.
- Typical substrates have diameters of 5 to 8 cm, which enables the realization of quantities of several 100 components in one coating run (Leybold Optics: Technical Features Syrus III, http: // www. sputtering.de/pdf/syrusiii-tf_en.pdf; 2005).
- the fitting of a dome with substrates is done manually. Increasing the substrate size is possible only by scaling up the entire structure.
- the layer thickness of the respective layer is i. d. R. by in situ control, e.g. by measuring the transmission, determined.
- the target layer thickness is reached, the deposition is stopped.
- the growth rates achieved are in the range of 0.5 nm / s.
- the maximum achievable layer thickness or service life is limited by the filling of the evaporator crucible.
- Sputtering methods are likewise used for the production of layer systems in the field of precision optics. Due to the likewise increased particle energies compared to pure vapor deposition, they offer the possibility of depositing dense, smooth, absorption-free and low-defect layers.
- Reactive DC sputtering is accompanied by strong is formation and has the problem of vanishing anode (Hagedorn, H .: “Solutions for High Productivity High Performance Coating Systems.” In: SPIE 5250 (2004), pp. 493-501).
- Radio frequency (RF) sputtering has therefore proved its worth in the past as the standard process for sputtering oxides.
- This method enables the defined deposition of multilayer optical layer systems of ceramic targets with in-situ Dobrowolski, JA: "Deposition error compensation for optical multilayer coatings II Experimental results - sputtering system" In: Applied Optics 32 (1993), pp. 2351-60) good time stability of the deposition rate is achieved In practical applications, the process is not suitable due to the significantly lower coating rate (by 0.1 nm / s) compared to DC sputtering processes and problems in scaling up the technology.
- the reactive MF sputtering for deposition becomes high and low
- coating rates of up to 0.6 nm / s are achieved
- Ensuring a constant oxygen partial pressure by means of an appropriate regulation, in particular during switch-on processes and substrate movements By means of this procedure and an optical in-situ monitoring of the coating, complex optical layer systems can be realized
- Substrate size substrates are reported in the format 13 x 13 cm 2 .
- a good lateral layer thickness homogeneity is made possible by substrate rotation and the use of a mask.
- Another variant of a sputtering process the so-called METAMODE TM process, is described, for example, in Lehan, JP; Sargent, RB; Klinger, RE: "High-rate aluminum oxide deposition by MetaMode TM reactive sputtering.”
- METAMODE TM Metal-oxide
- the plasma source is in this arrangement next to the magnetron coating zone.
- the process is characterized by very high deposition rates of up to 10.5 nm / s (Lehan, JP, Sargent, RB, Klinger, RE: "High-rate aluminum oxide deposition by MetaMode TM reactive sputtering.” In: Journal of Vacuum Science and Technology A 10 (1992), pp. 3401-6).
- optical layer systems deposited with this system are in Scherer, M.; Pistner, J.; Lehnert, W .: "Innovative Production of High-Quality Optical Coatings for Applications in Optics and Opto-Electronics.” In: SVC Annual Technical Conference Proceedings 47 (2004), p. 179-82, and Hagedorn, H .: “Solutions for High Productivity High Performance Coating Systems ". In: SPIE 5250 (2004), pp. 493-501.
- the coating rate is in the range of 0.45 to 0.7 nm / s, the substrate size is up to 15 cm in diameter.
- IBSD ion beam sputter deposition
- a target is atomized by a noble gas ion beam (Ar, Kr, Xe) with adjustable radiant intensity.
- Typical process pressures are in the range of 10 to 50 mPa and are thus lower than in conventional sputtering processes. Therefore, the sputtered elements extremely rarely experience impact and retain their favorable kinetic energy until they strike the substrate.
- the ion beam to constant beam power and operating the target in the metallic mode, an excellent long-term stability of the rate is achieved. Depending on the material, however, the rate is only 0.02 to 0.4 nm / s.
- By blending (partially moved) and substrate movement a very good lateral homogeneity can be achieved, in particular also on curved surfaces. Additional lent by suitable substrate movements also
- Narrow rectangular substrates can be homogeneously coated up to an edge length of 50 cm.
- Deposition of oxides is possible by adding oxygen close to the substrate, but the sputtering process remains at the target in metallic mode.
- a 60 Mo / Si double layer EUV mirror is described in Gawlitza, P .; Braun, S .; Leson, A .; Lipfert, S .; Nestler, M .: "Production of Precision Layers by Ion Beam Sputtering.”
- Vakuum in Anlagen undtechnik 19/2 (2007), pp. 37-43 describes SiO 2 / TiO 2 dielectric multilayers for an IR optical system are shown as an example of a reactive deposition.
- the coating rate is strongly influenced by the reactive gas partial pressure, which in turn depends on process fluctuations, eg due to substrate movement, switch-on processes, etc.
- process fluctuations eg due to substrate movement, switch-on processes, etc.
- long-term drifts of the sputtering target state lead to a long-term variation in the coating rate, which must be taken into account during process control.
- this dependence does not occur, but this method is only suitable for batch but not for in-line coating systems.
- the invention relates to a new process technology for the magnetron sputtering of dielectric layers, in particular for optical applications.
- the new concept provides for a magnetron coating module, which enables the reactive deposition of layers at a defined rate, even on large surfaces.
- a magnetron coating module which a) a first coating source, b) a rotating target as an auxiliary substrate, which is arranged between the first coating source and the area for receiving the substrate, c) a magnetron, wherein the rotating target forms the cathode of the magnetron, and d) a gas space separation between first coating source and the coating region on the substrate, wherein at least the surface of the rotating target (5) consists of a material which is not deposited during sputtering or only to a small extent on the substrate.
- magnetron coating module With the magnetron coating module according to the invention, a significantly improved stability of the coating rate and the homogeneity can be achieved in comparison to conventional coating modules. At the same time, it is ensured that only the materials to be deposited are deposited on the substrate. Contaminations arising from the sputtering cathode (which occur, for example, in the case of metal cathodes) can therefore be avoided.
- the rotating target (tube target) as an auxiliary substrate is preferably made of a material which has a low sputtering rate and, if it is sputtered, is not or only to a small extent incorporated into the deposited layer.
- One possibility is the use of carbon as the material for the tube target. It is preferably achieved that the atomized material with the reactive gas enters into a gaseous compound which is not or only to a small extent incorporated into the deposited layer, for example CO 2 in the case of a carbon auxiliary target. The gaseous compound can then be pumped out.
- the first coating source is preferably one
- This source which has a very high precision with respect to the homogeneity of the coating and the constancy of the coating rate.
- This source can be realized, e.g. in the form of a planar magnetron, in which a metallic target is sputtered in an inert atmosphere.
- the particle flow to the substrate can be specified very precisely and also reconciled with a model.
- a method for coating a substrate with a magnetron coating module according to the invention, wherein in a first step with the first coating source an occupancy of the rotating target is performed and in a second step the occupation is removed from the rotating target by means of the magnetron and deposited on the substrate.
- an occupancy of the auxiliary substrate is performed by the first coating source. This assignment is made by the magnetron from the auxiliary substrate removes and settles on the substrate with the correct stoichiometry.
- the new technology enables the transition to in-line coating processes for fine and precision optics to coat larger substrates at a higher throughput.
- the coating on substrates in the format of up to 3.21 x 6.00 m 2 is currently technically established at cycle times of less than 1 min.
- the additional advantage is an increase in the plant operating time between the maintenance cycles, since sputtering processes in the Generally have a longer service life than evaporation processes, which are limited by the maximum crucible filling and size.
- the removal of the occupancy from the rotating target is under power excess of the magnetron, i.
- the power of the magnetron is set so high that a complete removal of the previously made in the first step occupancy is guaranteed.
- the power surplus of the magnetron therefore ensures that the same continuous amount is always applied to the substrate, so that the coating deposits on the substrate in the correct stoichiometry.
- Another preferred condition for the high precision is that the material applied by the first target to the rotating target (auxiliary substrate) is completely removed from it in the second sputtering process.
- the rotating magnetron must be operated in this case with excess power.
- the coverage of the rotating target is carried out by sputtering a metallic target, preferably a target selected from the group consisting of Si, Ta, Ti, Zr, Hf, Al, Zn, Sn, Nb, V, W, Bi, Sb, Mo, Mg, Ca, Se, In, Ni, Cr, Mn, Te, Cd and / or alloys thereof by means of a planar magnetron as a coating source.
- a metallic target preferably a target selected from the group consisting of Si, Ta, Ti, Zr, Hf, Al, Zn, Sn, Nb, V, W, Bi, Sb, Mo, Mg, Ca, Se, In, Ni, Cr, Mn, Te, Cd and / or alloys thereof by means of a planar magnetron as a coating source.
- the occupancy of the rotating target is advantageously carried out in an inert atmosphere, wherein the expert skilled in the art, suitable for the sputtering inert gases are used, such. Ar, Kr, Xe, Ne, where Ar is by far the most common gas.
- the removal process of the rotating target is carried out in a reactive gas atmosphere, wherein the reactive gas atmosphere preferably contains or consists of O 2 , N 2 , H 2 S, N 2 O, NO 2 , CO 2 or mixtures thereof.
- the atmospheres used in the sputtering process may contain both reactive and inert gases (eg, Ar + O 2 ). It is likewise advantageous if the pressure of the atmosphere in the first step is 0.2 to 20 Pa, preferably 0.5 to 10 Pa, particularly preferably 1.0 to 5 Pa and / or in the second step 0.05 to 5 Pa, preferably 0 , 1 to 3 Pa, more preferably 0.2 to 2 Pa.
- Advantageous rotational speeds of the rotating target are between 1 to 100 l / min, preferably 2 to 50 l / min, particularly preferably 5 to 25 l / min, based on the surface of the rotating target.
- the first coating source is thereby dimensioned or adjusted such that the rotating target is at a rate of 0.1 to 200 nm * m / min, preferably 0.5 to 100 nm * m / min, particularly preferably 1 to 50 nm * m / min is coated.
- the material of the surface of the rotating target preferably forms a gaseous compound with the reactive gas which is not or only to a small extent incorporated into the precipitating layer.
- the magnetron coating module 100 consists of the following components:
- auxiliary substrate 5 forms a cathode for this magnetron and is formed in the present exemplary case of carbon
- a continuous coating process of the substrate 1 is shown, wherein the substrate is carried out at the speed v under the magnetron.
- a batch Operation of the magnetron coating module 100 possible.
- the figure shows in its central part a cylindrical auxiliary substrate 5, which rotates about its longitudinal axis. Below the cylindrical auxiliary substrate, the substrate 1 to be coated is arranged. This substrate may be architectural glass, for example.
- the substrate 1 is moved below the coating system.
- plasma is ignited in the region 6 between the auxiliary substrate 5 and the substrate 1.
- the auxiliary substrate thus forms a rod cathode, from which material is sputtered, which coats the substrate 1 connected as an anode.
- auxiliary substrate 5 In area 6 is a mixture of inert and reactive gas, which allows the deposition of a multi-component layer.
- auxiliary substrate 5 On the opposite side of the auxiliary substrate 5 is a planar magnetron 2, 3 in a shield 4.
- the auxiliary substrate 5 is connected as an anode, which is coated in the plasma region with material of the planar sputtering cathode 2.
- the gas phase in region 3 contains only inert gas, so that the deposition rate in region 3 can be determined from the known sputtering rates and the electrical parameters.
- the coating rate on the substrate 1 results from the mass balance on the auxiliary substrate 5. In addition to the known coating rate in the area 3, this also requires the mass occupation after the sputtering process in the area 6.
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Abstract
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Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/138,810 US20120097529A1 (en) | 2009-03-31 | 2010-03-25 | Magnetron coating module and magnetron coating method |
JP2012502497A JP5783613B2 (ja) | 2009-03-31 | 2010-03-25 | マグネトロンコーティングモジュール及びマグネトロンコーティング方法 |
EP10716757A EP2414557A1 (de) | 2009-03-31 | 2010-03-25 | Magnetron-beschichtungsmodul sowie magnetron-beschichtungsverfahren |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102009015737A DE102009015737B4 (de) | 2009-03-31 | 2009-03-31 | Magnetron-Beschichtungsmodul sowie Magnetron-Beschichtungsverfahren |
DE102009015737.9 | 2009-03-31 |
Publications (1)
Publication Number | Publication Date |
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WO2010112170A1 true WO2010112170A1 (de) | 2010-10-07 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/EP2010/001871 WO2010112170A1 (de) | 2009-03-31 | 2010-03-25 | Magnetron-beschichtungsmodul sowie magnetron-beschichtungsverfahren |
Country Status (6)
Country | Link |
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US (1) | US20120097529A1 (de) |
EP (1) | EP2414557A1 (de) |
JP (1) | JP5783613B2 (de) |
KR (1) | KR20120003926A (de) |
DE (1) | DE102009015737B4 (de) |
WO (1) | WO2010112170A1 (de) |
Families Citing this family (1)
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DE102014103744A1 (de) * | 2014-01-09 | 2015-02-26 | Von Ardenne Gmbh | Verfahren zum reaktiven Sputtern |
Citations (7)
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US4851095A (en) | 1988-02-08 | 1989-07-25 | Optical Coating Laboratory, Inc. | Magnetron sputtering apparatus and process |
US5405517A (en) * | 1993-12-06 | 1995-04-11 | Curtis M. Lampkin | Magnetron sputtering method and apparatus for compound thin films |
DE4418906A1 (de) * | 1994-05-31 | 1995-12-07 | Leybold Ag | Verfahren zum Beschichten eines Substrates und Beschichtungsanlage zu seiner Durchführung |
US20020092766A1 (en) * | 2001-01-16 | 2002-07-18 | Lampkin Curtis M. | Sputtering deposition apparatus and method for depositing surface films |
WO2004050944A2 (de) | 2002-12-04 | 2004-06-17 | Leybold Optics Gmbh | Verfahren zur herstellung einer multilayerschicht und vorrichtung zur durchführung des verfahrens |
DE10347521A1 (de) | 2002-12-04 | 2004-06-24 | Leybold Optics Gmbh | Verfahren zur Herstellung Multilayerschicht und Vorrichtung zur Durchführung des Verfahrens |
WO2005059197A2 (de) * | 2003-12-18 | 2005-06-30 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und vorrichtung zum magnetronsputtern |
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JPS62243761A (ja) * | 1986-04-16 | 1987-10-24 | Nissin Electric Co Ltd | スパツタリング用タ−ゲツト |
US5211824A (en) * | 1991-10-31 | 1993-05-18 | Siemens Solar Industries L.P. | Method and apparatus for sputtering of a liquid |
US6365010B1 (en) * | 1998-11-06 | 2002-04-02 | Scivac | Sputtering apparatus and process for high rate coatings |
AU2003304125A1 (en) * | 2002-12-18 | 2004-12-03 | Cardinal Cg Company | Plasma-enhanced film deposition |
DE112006003537B4 (de) * | 2005-12-28 | 2017-07-06 | Plansee Se | Verfahren zur Herstellung eines Sputtertargetaufbaus |
JP2007284296A (ja) * | 2006-04-17 | 2007-11-01 | Sumitomo Metal Mining Co Ltd | 焼結体及びその製造方法、その焼結体を用いて得られる透明酸化物薄膜およびその製造方法 |
JP5272361B2 (ja) * | 2006-10-20 | 2013-08-28 | 豊田合成株式会社 | スパッタ成膜装置およびスパッタ成膜装置用のバッキングプレート |
JP4979442B2 (ja) * | 2007-04-10 | 2012-07-18 | 昭和電工株式会社 | Gaスパッタターゲットの製造方法 |
JP5142111B2 (ja) * | 2008-12-26 | 2013-02-13 | 学校法人金沢工業大学 | スパッタリング装置 |
US20100200395A1 (en) * | 2009-02-06 | 2010-08-12 | Anton Dietrich | Techniques for depositing transparent conductive oxide coatings using dual C-MAG sputter apparatuses |
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2009
- 2009-03-31 DE DE102009015737A patent/DE102009015737B4/de active Active
-
2010
- 2010-03-25 KR KR1020117025906A patent/KR20120003926A/ko not_active Application Discontinuation
- 2010-03-25 WO PCT/EP2010/001871 patent/WO2010112170A1/de active Application Filing
- 2010-03-25 JP JP2012502497A patent/JP5783613B2/ja active Active
- 2010-03-25 US US13/138,810 patent/US20120097529A1/en not_active Abandoned
- 2010-03-25 EP EP10716757A patent/EP2414557A1/de not_active Withdrawn
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KR20120003926A (ko) | 2012-01-11 |
EP2414557A1 (de) | 2012-02-08 |
DE102009015737B4 (de) | 2013-12-12 |
US20120097529A1 (en) | 2012-04-26 |
DE102009015737A1 (de) | 2010-10-07 |
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