WO2010110608A3 - 질화물계 반도체 발광소자 - Google Patents

질화물계 반도체 발광소자 Download PDF

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Publication number
WO2010110608A3
WO2010110608A3 PCT/KR2010/001836 KR2010001836W WO2010110608A3 WO 2010110608 A3 WO2010110608 A3 WO 2010110608A3 KR 2010001836 W KR2010001836 W KR 2010001836W WO 2010110608 A3 WO2010110608 A3 WO 2010110608A3
Authority
WO
WIPO (PCT)
Prior art keywords
nitride
based semiconductor
emitting device
semiconductor light
void
Prior art date
Application number
PCT/KR2010/001836
Other languages
English (en)
French (fr)
Other versions
WO2010110608A2 (ko
Inventor
김극
최유항
김범진
Original Assignee
우리엘에스티 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 우리엘에스티 주식회사 filed Critical 우리엘에스티 주식회사
Publication of WO2010110608A2 publication Critical patent/WO2010110608A2/ko
Publication of WO2010110608A3 publication Critical patent/WO2010110608A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)

Abstract

본 개시는 기판; 기판에 형성되는 보이드 유도 홈; 기판에 양각되어 구비되며 보이드 유도 홈을 형성하는 보이드 유도 패턴; 보이드 유도 패턴 상에 구비되는 질화물계 반도체층; 및 보이드 유도 홈과 질화물계 반도체층에 의해 정의되는 3차원 구조의 보이드(void);를 포함하는 질화물계 반도체 발광소자에 관한 것이다.
PCT/KR2010/001836 2009-03-25 2010-03-25 질화물계 반도체 발광소자 WO2010110608A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20090025278A KR101131085B1 (ko) 2009-03-25 2009-03-25 질화물계 발광소자 및 그 제조방법
KR10-2009-0025278 2009-03-25

Publications (2)

Publication Number Publication Date
WO2010110608A2 WO2010110608A2 (ko) 2010-09-30
WO2010110608A3 true WO2010110608A3 (ko) 2010-12-09

Family

ID=42781680

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/001836 WO2010110608A2 (ko) 2009-03-25 2010-03-25 질화물계 반도체 발광소자

Country Status (2)

Country Link
KR (1) KR101131085B1 (ko)
WO (1) WO2010110608A2 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101034085B1 (ko) 2009-12-10 2011-05-13 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR20130128745A (ko) * 2012-05-17 2013-11-27 서울바이오시스 주식회사 기판 내에 보이드를 갖는 발광다이오드 및 그의 제조방법
KR101655178B1 (ko) * 2015-10-27 2016-09-08 주식회사 루미스타 발광 소자 및 그 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001176813A (ja) * 1999-12-15 2001-06-29 Nichia Chem Ind Ltd 窒化物半導体基板の作製方法
JP2002185037A (ja) * 2000-12-19 2002-06-28 Nippon Telegr & Teleph Corp <Ntt> 発光装置
KR20070009854A (ko) * 2005-07-14 2007-01-19 에피밸리 주식회사 화합물 반도체 발광소자

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006278477A (ja) 2005-03-28 2006-10-12 Kyocera Corp 半導体成長用基板、エピタキシャル基板とそれを用いた半導体装置、および、エピタキシャル基板の製造方法
JP2007214500A (ja) 2006-02-13 2007-08-23 Mitsubishi Chemicals Corp 半導体部材及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001176813A (ja) * 1999-12-15 2001-06-29 Nichia Chem Ind Ltd 窒化物半導体基板の作製方法
JP2002185037A (ja) * 2000-12-19 2002-06-28 Nippon Telegr & Teleph Corp <Ntt> 発光装置
KR20070009854A (ko) * 2005-07-14 2007-01-19 에피밸리 주식회사 화합물 반도체 발광소자

Also Published As

Publication number Publication date
KR20100107144A (ko) 2010-10-05
WO2010110608A2 (ko) 2010-09-30
KR101131085B1 (ko) 2012-03-30

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