WO2010110551A3 - 폴리실리콘 제조용 화학기상증착 반응기 - Google Patents

폴리실리콘 제조용 화학기상증착 반응기 Download PDF

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Publication number
WO2010110551A3
WO2010110551A3 PCT/KR2010/001677 KR2010001677W WO2010110551A3 WO 2010110551 A3 WO2010110551 A3 WO 2010110551A3 KR 2010001677 W KR2010001677 W KR 2010001677W WO 2010110551 A3 WO2010110551 A3 WO 2010110551A3
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WO
WIPO (PCT)
Prior art keywords
hot zone
bezel
reaction gas
preparation
vapor deposition
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PCT/KR2010/001677
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English (en)
French (fr)
Other versions
WO2010110551A2 (ko
Inventor
윤순광
정재철
김태수
김태형
유선일
김경호
Original Assignee
주식회사수성기술
한국실리콘주식회사
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Application filed by 주식회사수성기술, 한국실리콘주식회사 filed Critical 주식회사수성기술
Publication of WO2010110551A2 publication Critical patent/WO2010110551A2/ko
Publication of WO2010110551A3 publication Critical patent/WO2010110551A3/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4418—Methods for making free-standing articles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명은 폴리실리콘 제조용 화학기상증착 반응기에 관한 것으로서, 본 발명에 따른 폴리실리콘 제조용 화학기상증착 반응기는 베이스 플레이트;와, 상기 베이스 플레이트와의 사이에 밀폐된 핫존을 형성하는 베젤;과, 상기 핫존을 가열하는 발열부;와, 상기 핫존으로 반응가스를 공급 및 배출하는 유입공과 유출공; 및, 상기 유입공을 통해 핫존으로 공급되는 반응가스가 상기 베젤로 전달되는 열에너지를 흡수하여 베젤의 온도를 냉각시키는 것과 동시에 가열된 상태로 상기 핫존으로 공급되도록 상기 베젤의 내측에 형성되는 열교환부;를 포함하는 것을 특징으로 한다. 이에 의하여, 베젤로 전달되어 외부로 손실되는 열에너지를 최소화시킬 수 있을 뿐만 아니라, 열에너지를 흡수한 반응가스가 가열된 상태로 핫존으로 공급되므로 핫존의 온도를 유지하기 위한 전력소비량을 절감시킬 수 있는 폴리실리콘 제조용 화학기상증착 반응기가 제공된다.
PCT/KR2010/001677 2009-03-23 2010-03-18 폴리실리콘 제조용 화학기상증착 반응기 WO2010110551A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090024351A KR101178046B1 (ko) 2009-03-23 2009-03-23 폴리실리콘 제조용 화학기상증착 반응기
KR10-2009-0024351 2009-03-23

Publications (2)

Publication Number Publication Date
WO2010110551A2 WO2010110551A2 (ko) 2010-09-30
WO2010110551A3 true WO2010110551A3 (ko) 2011-01-06

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PCT/KR2010/001677 WO2010110551A2 (ko) 2009-03-23 2010-03-18 폴리실리콘 제조용 화학기상증착 반응기

Country Status (2)

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KR (1) KR101178046B1 (ko)
WO (1) WO2010110551A2 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101146864B1 (ko) * 2011-10-27 2012-05-16 웅진폴리실리콘주식회사 폴리실리콘 제조용 반응기
KR101380767B1 (ko) * 2012-04-25 2014-04-02 한국실리콘주식회사 폴리실리콘 제조용 화학기상증착 반응기
KR101302971B1 (ko) * 2012-09-11 2013-09-03 주식회사 아이제이피에스 자켓과 이를 사용한 반응기
KR101895538B1 (ko) * 2015-09-08 2018-09-05 한화케미칼 주식회사 폴리실리콘 제조 장치
KR102134592B1 (ko) 2020-03-02 2020-07-16 오완석 폴리실리콘 취출 장치
KR102161581B1 (ko) 2020-03-02 2020-10-05 오완석 안전성이 향상된 폴리실리콘의 취출 방법

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR980011804A (ko) * 1996-07-29 1998-04-30 김광호 반도체장치의 냉각방법
JP2000008167A (ja) * 1998-06-25 2000-01-11 Kokusai Electric Co Ltd 基板処理装置
JP2002353145A (ja) * 2001-05-23 2002-12-06 Hitachi Kokusai Electric Inc 熱処理装置
JP2003318169A (ja) * 2002-04-22 2003-11-07 Anelva Corp 窒化シリコン膜作製方法及び窒化シリコン膜作製装置
JP2004332039A (ja) * 2003-05-07 2004-11-25 Cotec Co Ltd Ｃｖｄ用反応容器
KR20060130531A (ko) * 2006-11-07 2006-12-19 에이스하이텍 주식회사 퍼니스 장치
KR20080111154A (ko) * 2006-04-25 2008-12-22 메씨어-부가띠 처리로

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR980011804A (ko) * 1996-07-29 1998-04-30 김광호 반도체장치의 냉각방법
JP2000008167A (ja) * 1998-06-25 2000-01-11 Kokusai Electric Co Ltd 基板処理装置
JP2002353145A (ja) * 2001-05-23 2002-12-06 Hitachi Kokusai Electric Inc 熱処理装置
JP2003318169A (ja) * 2002-04-22 2003-11-07 Anelva Corp 窒化シリコン膜作製方法及び窒化シリコン膜作製装置
JP2004332039A (ja) * 2003-05-07 2004-11-25 Cotec Co Ltd Ｃｖｄ用反応容器
KR20080111154A (ko) * 2006-04-25 2008-12-22 메씨어-부가띠 처리로
KR20060130531A (ko) * 2006-11-07 2006-12-19 에이스하이텍 주식회사 퍼니스 장치

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Publication number Publication date
WO2010110551A2 (ko) 2010-09-30
KR20100105969A (ko) 2010-10-01
KR101178046B1 (ko) 2012-08-29

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