WO2010100678A1 - Élément d'enregistrement magnétique par effet tunnel, cellule de mémoire magnétique et mémoire vive magnétique - Google Patents

Élément d'enregistrement magnétique par effet tunnel, cellule de mémoire magnétique et mémoire vive magnétique Download PDF

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WO2010100678A1
WO2010100678A1 PCT/JP2009/001017 JP2009001017W WO2010100678A1 WO 2010100678 A1 WO2010100678 A1 WO 2010100678A1 JP 2009001017 W JP2009001017 W JP 2009001017W WO 2010100678 A1 WO2010100678 A1 WO 2010100678A1
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layer
magnetic recording
magnetic
tunnel
electrode
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PCT/JP2009/001017
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English (en)
Japanese (ja)
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早川純
山ノ内路彦
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株式会社日立製作所
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Priority to PCT/JP2009/001017 priority Critical patent/WO2010100678A1/fr
Priority to JP2011502505A priority patent/JP5166600B2/ja
Publication of WO2010100678A1 publication Critical patent/WO2010100678A1/fr

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Definitions

  • the present invention relates to a tunnel magnetic recording element for writing magnetic information by current and a low power consumption nonvolatile magnetic memory equipped with the same.
  • Non-patent Document 1 As a tunnel magnetoresistive element to be applied to highly integrated magnetic memories in the future, a tunnel magnetoresistive element using magnesium oxide as an insulating film is S. Yuasa. Et al., Nature Material 3, 868 (2004) (non-patent Document 1) and Japanese Patent Application Laid-Open No. 2007-59879 (Patent Document 1).
  • a conventional nonvolatile magnetic memory is constituted by a memory cell in which a tunnel magnetoresistive element is formed on a MOSFET. Switching uses a MOSFET to write information by rotating the magnetization direction of the tunnel magnetoresistive element using the current-induced spatial magnetic field generated by energizing the bit line and the word line, and outputting the tunnel magnetoresistive element This is a method of reading information by voltage.
  • Non-Patent Document 2 M. ⁇ C. Weber et al., Journal of Applied Physics 95, 6613 (2004) (Non-Patent Document 2) is disclosed as a method that modulates the magnetic properties of a ferromagnetic film with laser light and does not use electrical means. ing.
  • An object of the present invention is to provide a tunnel magnetic recording element capable of reducing the amount of thermal stability required for a magnetic recording layer as compared with the conventional one and a nonvolatile magnetic memory using the same.
  • a tunnel magnetic recording element capable of magnetic writing by spin transfer torque magnetization reversal is provided.
  • an antiferromagnetic layer or a multiferroic layer is adjacent to a magnetic recording layer, and the magnitude of the exchange coupling magnetic field acting between the magnetic recording layer and the antiferromagnetic layer or the multiferroic layer is set to an electric field or light irradiation.
  • the damping constant ⁇ of the magnetic recording layer can be increased, and the effective erroneous writing at the time of reading can be reduced by 10 digits or more.
  • the multiferroic layer is a layer having both antiferromagnetic properties and ferroelectric properties.
  • a magnetic recording layer, a tunnel barrier layer, and a magnetic pinned layer are adjacent to each other in this order, and a multiferroic layer provided adjacent to the other surface of the magnetic recording layer and the magnetic pinned layer side
  • the magnetization direction is fixed by magnetic exchange coupling acting between the ferroic layer, and an electric resistance that changes according to the magnetization direction of the magnetic pinned layer and the magnetic recording layer is detected as a read signal, and the electric resistance is detected.
  • an electric field is applied to the multiferroic layer via the first electrode layer and the second electrode layer, thereby reducing the probability of magnetization rotation of the magnetic recording layer.
  • an antiferromagnetic layer, a magnetic recording layer, a tunnel barrier layer, and a magnetic pinned layer are adjacent to each other in this order, and are provided adjacent to the other surface of the antiferromagnetic layer.
  • the magnetization direction of the magnetic recording layer is fixed by magnetic exchange coupling acting between the antiferromagnetic layer, and the electric resistance that changes according to the magnetization direction of the magnetic fixed layer and the magnetic recording layer is detected as a read signal.
  • the laser diode is irradiated with a laser to reduce the probability of magnetization rotation of the magnetic recording layer.
  • tunnel magnetic recording elements in particular, a tunnel magnetic recording element capable of magnetic writing by spin transfer torque magnetization reversal by applying a current through the first electrode layer and the third electrode is provided.
  • the magnetic memory cell of the present invention has the above-described tunnel magnetic recording element and the probability of magnetization rotation of the magnetic recording layer by applying an electric field to the multiferroic layer when reading the electric resistance of the tunnel magnetic recording element.
  • a write circuit for writing magnetic information by rotating the magnetization direction of the magnetic recording layer of the tunnel magnetic recording element by a spin transfer torque, and obtaining a signal corresponding to the electric resistance of the tunnel magnetic recording element It has.
  • another magnetic memory cell of the present invention is configured to apply a voltage to the laser diode layer when reading the electrical resistance of the other tunnel magnetic recording element and the tunnel magnetic recording element.
  • a read circuit that reduces the probability of magnetization rotation of the magnetic recording layer by irradiating the recording element with a laser and obtains a signal corresponding to the electric resistance of the tunnel magnetic recording element, and magnetic recording of the tunnel magnetic recording element
  • a write circuit for writing magnetic information by rotating the magnetization direction of the layer by a spin transfer torque.
  • the magnetic random access memory of the present invention includes a plurality of magnetic memory cells and means for selecting a desired magnetic memory cell, and uses the magnetic memory cell of the present invention as the magnetic memory cell.
  • the tunnel magnetic recording element of the present invention can be applied to a magnetic memory cell or a magnetic random access memory to realize a versatile low power consumption nonvolatile magnetic memory.
  • Second magnetic layer 2012... First nonmagnetic layer, 2013... Second magnetic layer, 20021. ⁇ Second nonmagnetic layer, 20023... Fourth magnet Layer 301... Multiferroic layer 401 401 insulating layer 501 first electrode layer 502 second electrode layer 503 third electrode 504. -Electrode line, 505 ... Bit line, 601 ... Antiferromagnetic layer, 602 ... Antiferromagnetic layer, 700 ... Magnetic memory cell, 701 ... Electric field control driver, 702 ... Laser Diode control driver, 703... Laser irradiation unit, 800.
  • FIG. 1 is a schematic cross-sectional view showing an example of a tunnel magnetic recording element according to the present invention.
  • the tunnel magnetic recording element of this example was manufactured using the sputtering method, it may be manufactured using other methods such as a molecular beam atomic layer growth method.
  • the tunnel magnetic recording element 1 has a structure in which a magnetic pinned layer 201, a tunnel barrier layer 202, a magnetic recording layer 2002, a multiferroic layer 301, and a second electrode layer 502 are laminated in this order from the first electrode layer 501 side.
  • the second electrode layer 502 is used when electrically reading the magnetic information of the tunnel magnetic recording element 1.
  • the second electrode 502 is arranged on the substrate side, the multiferroic layer 301, the magnetic recording layer 2002, the tunnel barrier layer 202, the magnetic pinned layer 201, the first electrode layer. It is also possible to use a configuration in which 501 are stacked in this order.
  • the multiferroic layer 301 is a material layer having both antiferromagnetic properties and ferroelectric properties. Therefore, the magnetization of the magnetic recording layer 2002 is fixed in a certain direction by magnetic exchange coupling with the multiferroic layer 301 as an antiferromagnetic material.
  • a circuit including the first power supply 10 and the first switching element 11 is connected to the second electrode layer 502 and is used at the time of reading. At the time of reading, the second switching element 21 is closed, current is applied from the second power source 20 through the third electrode 503 connected to the magnetic recording layer 2002 of the tunnel magnetic recording element 1, and the detector 22 uses the tunnel magnetic recording element 1. Is read out by current or voltage output. As the detector 22, a voltmeter or an ammeter can be used.
  • the first switching element 11 is closed, and a voltage or an electric field is applied to the multiferroic layer 301 and the magnetic recording layer 2002 from the first power supply 10.
  • the second switching element 21 is closed, and current is supplied to the tunnel magnetic recording element from the second power source 20 through the third electrode 503 connected to the magnetic recording layer 2002 of the tunnel magnetic recording element 1 to spin.
  • the magnetization direction of the magnetic recording layer 2002 is directed to an arbitrary direction by transfer. At this time, it is desirable to keep the first switching element 11 open.
  • FIG. 2 shows a modification of the tunnel magnetic recording element shown in FIG.
  • the element shown in FIG. 2 can apply an electric field from the first power supply 10 to the multiferroic layer 301 efficiently and stably by forming an insulating layer 401 between the second electrode 502 and the multiferroic layer 301.
  • the thickness of the insulating layer 401 can be set so as to obtain a desired optimized electric field value.
  • FIG. 3 shows a modification of the tunnel magnetic recording element shown in FIG.
  • the tunnel magnetic recording element 3 shown in FIG. 3 uses an antiferromagnetic layer 601 such as MnIr, MnPt, CrMnPt, CrMnIr, or MnFe as a means for fixing the magnetization direction of the magnetic fixed layer 201, and is anti-magnetic with the magnetic fixed layer. By fixing exchange coupling between the ferromagnetic layers, the magnetization pinning force of the magnetic pinned layer is stabilized.
  • the first magnetic layer 2011 and the second magnetic layer 2013 are stacked on the magnetic pinned layer 201 with a nonmagnetic layer 2012, such as CoFeB / Ru / CoFe, between the two magnetic layers 2011 and 2013.
  • a laminated ferrimagnetic structure in which the magnetizations are coupled antiparallel a structure in which the magnetization pinning force of the magnetic pinned layer is stabilized.
  • the tunnel magnetic recording element 4 shown in FIG. 4 shows a modification of the tunnel magnetic recording element shown in FIG. 3, and has a structure in which a nonmagnetic layer 20022 is sandwiched between two magnetic layers 20021 and 20023 in a magnetic recording layer 2002.
  • a laminated ferrimagnetic structure in which the magnetizations of the two magnetic layers 20021 and 20023 are coupled in antiparallel is applied.
  • Ru As the nonmagnetic layer used at this time, it is desirable to use Ru or the like.
  • Multiferroics refers to a material having both magnetic properties and dielectric properties, and is mainly formed of an oxide.
  • the multiferroic layer used in the tunnel magnetic recording element having an electric field application mechanism in the magnetic recording layer of the present invention includes antiferromagnetic and ferroelectric properties such as BiFeO 3 , YMnO 3 , CoFeO 2 and Cr 2 O 3 .
  • a material comprising both is desirable.
  • a material containing at least one element of Co, Fe, and Ni is used for the magnetic recording layer 2002 and the magnetic pinned layer 201.
  • MgO is used for the tunnel barrier layer 202
  • a material containing B therein It is desirable to use and examples are shown in Table 1.
  • the magnetic recording layer 2002 and the magnetic pinned layer 201 may be ferromagnetic layers whose magnetization directions are perpendicular to the film surface of the element.
  • materials such as TbFeCo, GdFeCo, CoPt, FePt, CoFeBPt, CoFeBCr, CoCrPt, CoCr, CoPtB, FePtB, CoGd, and CoFeBCr can be applied.
  • a Co / Pt multilayer film, a CoFe / Pt multilayer film, an Fe / Pt multilayer film, a Co / Pd multilayer film, or the like can be used.
  • material selection for the tunnel barrier layer 202 will be described.
  • the tunnel barrier layer 202 it is most desirable to use MgO, AlO, oxides such as SiO 2, or a semiconductor material such as GaAs or ZnSe, AlN, may be used a nitride such as SiN.
  • MgO is used for the tunnel barrier layer 202
  • a large tunnel magnetoresistance effect that is, a read output signal can be obtained by using CoFeB having a body-centered cubic lattice structure for the magnetic recording layer 2002 and the magnetic pinned layer 201.
  • both MgO and CoFeB are composed of a thin film having a high (100) orientation, and the composition of CoFeB is Co 20 Fe 60 B 20 .
  • the material used for the insulating layer 401 provided in the tunnel magnetic recording element 2 of FIG. 2 is desirably a material having a high dielectric constant such as Si or Al oxide such as SiO or Al 2 O 3 .
  • a nitride such as SiN may be used.
  • the first electrode layer 501 and the second electrode layer 502 may be formed of a two-layer film or a multilayer film such as W, TiN, or TiN and AlCu.
  • the electric field writing magnetic recording film formed in this way is formed into a tunnel magnetic recording element having an area of 0.1 ⁇ m ⁇ 0.15 ⁇ m by using photolithography, ion milling, reactive etching method, etc. Operation is possible even in a miniaturized device.
  • FIG. 8 shows the behavior of the exchange coupling magnetic field Hex acting between the two layers when an electric field is applied to the multiferroic layer 301 and the magnetic recording layer 2002 of the tunnel magnetic recording element.
  • Hex increases in proportion to the electric field.
  • Hex is defined as a value representing the magnitude of exchange coupling energy as a magnetic field, and can be evaluated by measuring the dependence of magnetization on the external magnetic field using a VSM (sample vibration type magnetometer) or the like.
  • FIG. 9 shows the relationship between Hex and the damping constant ⁇ of the magnetic recording layer when NiFe is used for the magnetic recording layer 2002.
  • ⁇ increases in proportion to Hex.
  • the magnetization reversal current Ic due to the spin transfer torque is proportional to ⁇ of the magnetic recording layer 2002. Therefore, a state where ⁇ is large means that Ic of the magnetic recording layer 2002 is large, and indicates that the magnetization of the magnetic recording layer 2002 is not easily reversed when a current is applied.
  • Reading is normally performed by applying a current value equal to or lower than the write current to the tunnel magnetic recording element and detecting the current or voltage output of the element at that time. Even with a very small current, spin transfer torque acts on the magnetic recording layer 2002, and the magnetization direction of the magnetic recording layer 2002 is reversed probabilistically. This is called so-called read disturb.
  • read disturb Conventionally, attempts have been made to improve the thermal stability of the magnetic recording layer 2002 in order to avoid read disturb, but there has been a very difficult aspect due to the limitations of the material.
  • read disturb is avoided by applying an electric field to the multiferroic layer 301 and the magnetic recording layer 2002 during reading and increasing the damping constant ⁇ of the magnetic recording layer through Hex as described above.
  • the second switching element 21 is closed, current is applied from the second power source 20, and the resistance of the tunnel magnetic recording element 1 is read by current or voltage output by the detector 22.
  • the first switching element 11 is closed, and a voltage or an electric field is applied from the first power supply 10 to the multiferroic layer 301 and the magnetic recording layer 2002, so that the damping of the magnetic recording layer 2002 is performed.
  • the constant ⁇ is increased, and the magnetization reversal current Ic is increased.
  • the second switching element 21 is closed, current is supplied from the second power source 20 to the tunnel magnetic recording element, and the magnetization direction of the magnetic recording layer 2002 is directed to an arbitrary direction by spin transfer. At this time, it is desirable to keep the first switching element 11 open.
  • FIG. 10 shows the thermal stability constant E / kBT dependence of the magnetization reversal probability of the magnetic recording layer 2002 for the tunnel magnetic recording elements 1 to 4 described above.
  • E represents magnetization reversal energy
  • kB represents Boltzmann constant
  • T represents temperature.
  • a solid line “a” in the figure indicates characteristics when no electric field is applied to the multiferroic layer 301.
  • the dotted line b shows the characteristic in the state where the electric field is applied and the damping constant increases between 5 and 50 times.
  • the inversion probability at the time of reading can be reduced by one digit or more when the damping constant ⁇ is increased by a factor of 5.
  • Embodiment 2 of the tunnel magnetic recording element according to the present invention will be described.
  • the series of Example 2 is a type in which the damping constant ⁇ of the magnetic recording layer is controlled by irradiating the antiferromagnetic layer and the magnetic recording layer of the tunnel magnetic recording element with a laser diode to avoid read disturb. This is a magnetic recording element.
  • the tunnel magnetic recording element 5 shown in FIG. 5 includes a magnetic pinned layer 201, a tunnel barrier layer 202, a magnetic recording layer 2002, an antiferromagnetic layer 602, a laser diode 800, and a second electrode layer from the first electrode layer 501 side.
  • 502 has a stacked structure in this order.
  • the second electrode layer 502 is used when electrically reading the magnetic information of the tunnel magnetic recording element 5. Contrary to the stacking order shown in FIG. 5, the second electrode 502 is disposed on the substrate side, and the laser diode 800, the antiferromagnetic layer 602, the magnetic recording layer 2002, the tunnel barrier layer 202, the magnetic pinned layer 201, the first It is also possible to use a configuration in which one electrode layer 501 is stacked in this order.
  • the magnetization of the magnetic recording layer 2002 is fixed in a certain direction by magnetic exchange coupling with the antiferromagnetic material 602.
  • a circuit including the first power supply 10 and the first switching element 11 is connected to the second electrode layer 502 and is used at the time of reading.
  • the second switching element 21 is closed, current is applied from the second power source 20 through the third electrode 503 connected to the magnetic recording layer 2002 of the tunnel magnetic recording element 5, and the tunnel magnetic recording element 5 is detected by the detector 22. Is read out by current or voltage output.
  • a voltmeter or an ammeter can be used.
  • the first switching element 11 is closed, and a voltage is applied from the first power supply 10 to the laser diode, and the antiferromagnetic layer 602 and the magnetic recording layer 2002 are irradiated with laser light. It is in a state.
  • the second switching element 21 is closed, and current is supplied from the second power source 20 to the tunnel magnetic recording element through the third electrode 503 connected to the magnetic recording layer 2002 of the tunnel magnetic recording element 5 to spin.
  • the magnetization direction of the magnetic recording layer 2002 is directed to an arbitrary direction by transfer.
  • it is desirable that the first switching element 11 is in an open state and laser light irradiation from the laser diode is turned off.
  • FIG. 6 shows a modification of the tunnel magnetic recording element shown in FIG.
  • the tunnel magnetic recording element 6 shown in FIG. 6 uses an antiferromagnetic layer 601 such as MnIr, MnPt, CrMnPt, CrMnIr, and MnFe as a means for fixing the magnetization direction of the magnetic fixed layer 201, and is opposite to the magnetic fixed layer.
  • an antiferromagnetic layer 601 such as MnIr, MnPt, CrMnPt, CrMnIr, and MnFe
  • the first magnetic layer 2011 and the second magnetic layer 2013 are laminated on the magnetic pinned layer 201 with a nonmagnetic layer 2012, such as CoFeB / Ru / CoFe, between the two magnetic layers 2011 and 2013.
  • a nonmagnetic layer 2012 such as CoFeB / Ru / CoFe
  • the tunnel magnetic recording element 7 shown in FIG. 7 shows a modification of the tunnel magnetic recording element shown in FIG. 6, and has a structure in which a nonmagnetic layer 20022 is sandwiched between two magnetic layers 20021 and 20023 in a magnetic recording layer 2002.
  • a laminated ferrimagnetic structure in which the magnetizations of the two magnetic layers 20021 and 20023 are coupled in antiparallel is applied.
  • Ru As the nonmagnetic layer used at this time, it is desirable to use Ru or the like.
  • the laser diode 800 has a function of oscillating laser when voltage is applied.
  • a semiconductor heterojunction such as MgO / ZnO / MgO or GaAs / GaAlAs can be used.
  • a material such as MnIr, MnPt, CrMnPt, CrMnIr, or MnFe can be used for the antiferromagnetic layer 602.
  • a material containing at least one element of Co, Fe, and Ni is used for the magnetic recording layer 2002 and the magnetic pinned layer 201.
  • the magnetic recording layer 2002 and the magnetic pinned layer 201 may be ferromagnetic layers whose magnetization directions are perpendicular to the film surface of the element.
  • materials such as TbFeCo, GdFeCo, CoPt, FePt, CoFeBPt, CoFeBCr, CoCrPt, CoCr, CoPtB, FePtB, CoGd, and CoFeBCr can be applied.
  • a Co / Pt multilayer film, a CoFe / Pt multilayer film, an Fe / Pt multilayer film, a Co / Pd multilayer film, or the like can be used.
  • material selection for the tunnel barrier layer 202 will be described.
  • the tunnel barrier layer 202 it is most desirable to use MgO, AlO, oxides such as SiO 2, or a semiconductor material such as GaAs or ZnSe, AlN, may be used a nitride such as SiN.
  • the tunnel barrier layer 202 when MgO is used for the tunnel barrier layer 202, a large tunnel magnetoresistance effect, that is, a read output signal can be obtained by using CoFeB having a body-centered cubic lattice structure for the magnetic recording layer 2002 and the magnetic pinned layer 201.
  • both MgO and CoFeB are composed of a thin film having a high (100) orientation, and the composition of CoFeB is Co 20 Fe 60 B 20 .
  • the first electrode layer 501 and the second electrode layer 502 may be formed of a two-layer film or a multilayer film such as W, TiN, or TiN and AlCu.
  • the electric field writing magnetic recording film formed in this way is formed into a tunnel magnetic recording element having an area of 0.1 ⁇ m ⁇ 0.15 ⁇ m by using photolithography, ion milling, reactive etching method, etc. Operation is possible even in a miniaturized device.
  • FIG. 11 shows the behavior of the exchange coupling magnetic field Hex acting between the two layers with respect to the irradiation time when the antiferromagnetic layer 602 and the magnetic recording layer 2002 of the tunnel magnetic recording element are irradiated with laser light.
  • Hex increases with the irradiation time ps and then saturates. Therefore, Hex can be controlled by adjusting the irradiation time.
  • the damping constant ⁇ of the magnetic recording layer 2002 can be increased as described in the first embodiment, and read disturb is avoided.
  • the second switching element 21 is closed, current is applied from the second power source 20, and the resistance of the tunnel magnetic recording element 5 is read by the detector 22 by current or voltage output.
  • the first switching element 11 is closed, a voltage is applied from the first power supply 10 to the laser diode, and the antiferromagnetic layer 602 and the magnetic recording layer 2002 are irradiated with laser light.
  • the damping constant ⁇ of the magnetic recording layer 2002 is increased and the magnetization reversal current Ic is increased.
  • the second switching element 21 is closed, current is supplied from the second power source 20 to the tunnel magnetic recording element, and the magnetization direction of the magnetic recording layer 2002 is directed to an arbitrary direction by spin transfer. At this time, it is desirable that the first switching element 11 is in an open state and laser light irradiation from the laser diode is turned off.
  • the effect of the present embodiment is the same as that of the first embodiment.
  • the inversion probability at the time of reading is one digit or more. Can be reduced.
  • FIG. 12 and 13 are schematic cross-sectional views showing a configuration example of a magnetic memory cell according to the present invention.
  • This magnetic memory cell is one in which the tunnel magnetic recording element 200 shown in the first or second embodiment is mounted as a memory cell.
  • FIG. 12 shows a configuration example of a magnetic memory cell having a structure in which the tunnel magnetic recording element 200 is arranged so as to be shifted from the position immediately above the electrode 142 via the electrode layer 501.
  • FIG. 13 shows a configuration example of a magnetic memory cell having a structure in which the tunnel magnetic recording element 200 is arranged directly above the electrode 142 via the electrode layer 501.
  • the C-MOS transistor 100 is composed of two n-type semiconductors 101 and 102 and one p-type semiconductor 103.
  • An electrode 121 serving as a drain is electrically connected to the n-type semiconductor 101 and is connected to the ground via the electrodes 141 and 147.
  • An electrode 122 serving as a source is electrically connected to the n-type semiconductor 102.
  • ON / OFF of the current between the source electrode 122 and the drain electrode 121 is controlled by ON / OFF of the gate electrode 123.
  • Electrodes 145, 144, 143, 142, and 501 are stacked on the source electrode 122, and the tunnel magnetic recording element 200 is connected thereto.
  • the bit line 505 is connected to the magnetic recording layer 2002 of the tunnel magnetic recording element 200. Reading is performed by applying current or voltage from the bit line 505 through the transistor 100. In particular, when a barrier layer and a magnetic pinned layer are applied as the reading layer, reading is performed by the tunnel magnetoresistance effect. In the magnetic memory cell of this embodiment, the magnetization direction of the magnetic recording layer 2002 is controlled by the voltage applied to the electrode 502 of the tunnel magnetic recording element 200.
  • FIG. 14 is a diagram showing a configuration example of a magnetic random access memory in which the magnetic memory cells are arranged, and is a magnetic random access memory in which the tunnel magnetic recording element of Example 1 is mounted as a magnetic memory cell.
  • the gate electrode 123 and the bit line 505 are electrically connected to the magnetic memory cell 700.
  • the recording operation is performed by applying a voltage or a current to the memory cell selected by the gate electrode and the bit line. Further, in the memory cell selected by the transistor, the information in the memory cell is read by the voltage or resistance change between the bit line and the transistor 100.
  • the damping constant of the magnetic recording layer of the magnetic memory cell is controlled, and erroneous writing at the time of the read operation is performed. Suppress.
  • FIG. 15 is a diagram showing a configuration example of a magnetic random access memory in which the magnetic memory cells are arranged, and is a magnetic random access memory in which the tunnel magnetic recording element of Example 2 is mounted as a magnetic memory cell.
  • the gate electrode 123 and the bit line 505 are electrically connected to the magnetic memory cell 700.
  • the recording operation is performed by applying a voltage or a current to the memory cell selected by the gate electrode and the bit line. Further, in the memory cell selected by the transistor, the information in the memory cell is read by the voltage or resistance change between the bit line and the transistor 100.
  • the laser diode control driver 702 and the electrode wire 504 irradiate the magnetic memory cell with laser during this read operation, thereby controlling the damping constant of the magnetic recording layer of the magnetic memory cell, thereby preventing erroneous writing during the read operation. Suppress.
  • FIG. 16 is a diagram showing a configuration example of a magnetic random access memory of a system in which laser diodes are provided in arbitrary subarray units in the magnetic random access memory of FIG. 15 and laser light irradiation is performed in subarray units when reading magnetic information.
  • Laser irradiation is performed simultaneously on a plurality of magnetic memory cells covered with a laser irradiation unit 703 as shown in FIG.
  • Laser irradiation is performed in an area including a magnetic memory cell to be read out in an arbitrary unit.
  • the magnetic recording state of the target magnetic memory cell is read by the path of the transistor 100 and the bit line 505.
  • the damping constant of the magnetic recording layer of any magnetic memory cell irradiated with the laser increases, and the probability of erroneous writing at the time of reading in the magnetic memory cell can be reduced.
  • the degree of reduction of erroneous writing is the degree shown in FIG. 11, and the effect of reducing erroneous writing by about two digits is possible. With this configuration, operation at high speed and low power consumption is possible, and a gigabit-class high-density magnetic random access memory can be realized.

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Abstract

L'invention porte sur un élément d'enregistrement magnétique par effet tunnel et sur une mémoire volatile à basse consommation d'énergie l'utilisant, dans lesquels l'occurrence d'une erreur d'écriture est réduite lorsque des informations magnétiques sont lues. Lorsque des informations sont lues, un champ magnétique de couplage d'échange est modulé par l'application d'un champ électrique ou la lumière d'émission afin d'augmenter une constante d'amortissement α d'une couche d'enregistrement magnétique (2002), réduisant de ce fait le taux d'erreur d'écriture au moment de la lecture. Un moyen de modulation du champ magnétique de couplage d'échange place une couche multiferroïque près de la couche d'enregistrement magnétique de l'élément d'enregistrement magnétique par effet tunnel et applique un champ électrique, ou inclut une diode laser dans la couche d'enregistrement magnétique par l'intermédiaire d'une couche antiferromagnétique et émet un faisceau laser. Pour l'écriture, un couple de transfert de spin est utilisé qui est activé par le courant circulant dans une couche à aimantation fixe, une couche barrière tunnel et la couche d'enregistrement magnétique. Pour la lecture, la direction d'aimantation de la couche d'enregistrement magnétique est électriquement détectée à l'aide de l'effet tunnel de magnétorésistance.
PCT/JP2009/001017 2009-03-06 2009-03-06 Élément d'enregistrement magnétique par effet tunnel, cellule de mémoire magnétique et mémoire vive magnétique WO2010100678A1 (fr)

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KR102451098B1 (ko) 2015-09-23 2022-10-05 삼성전자주식회사 자기 메모리 장치 및 이의 제조 방법

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