WO2010061883A1 - 薄膜トランジスタ用ゲート絶縁膜形成剤 - Google Patents
薄膜トランジスタ用ゲート絶縁膜形成剤 Download PDFInfo
- Publication number
- WO2010061883A1 WO2010061883A1 PCT/JP2009/069943 JP2009069943W WO2010061883A1 WO 2010061883 A1 WO2010061883 A1 WO 2010061883A1 JP 2009069943 W JP2009069943 W JP 2009069943W WO 2010061883 A1 WO2010061883 A1 WO 2010061883A1
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- WIPO (PCT)
- Prior art keywords
- insulating film
- gate insulating
- group
- thin film
- film transistor
- Prior art date
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D239/00—Heterocyclic compounds containing 1,3-diazine or hydrogenated 1,3-diazine rings
- C07D239/02—Heterocyclic compounds containing 1,3-diazine or hydrogenated 1,3-diazine rings not condensed with other rings
- C07D239/24—Heterocyclic compounds containing 1,3-diazine or hydrogenated 1,3-diazine rings not condensed with other rings having three or more double bonds between ring members or between ring members and non-ring members
- C07D239/28—Heterocyclic compounds containing 1,3-diazine or hydrogenated 1,3-diazine rings not condensed with other rings having three or more double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, directly attached to ring carbon atoms
- C07D239/46—Two or more oxygen, sulphur or nitrogen atoms
- C07D239/60—Three or more oxygen or sulfur atoms
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D403/00—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, not provided for by group C07D401/00
- C07D403/02—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, not provided for by group C07D401/00 containing two hetero rings
- C07D403/06—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, not provided for by group C07D401/00 containing two hetero rings linked by a carbon chain containing only aliphatic carbon atoms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
Definitions
- the present invention relates to a gate insulating film forming agent for a thin film transistor for forming a gate insulating film having excellent insulating properties, and further, a gate insulating film obtained by using this forming agent, and the gate insulating film.
- the present invention relates to a thin film transistor manufactured in this manner.
- the gate insulating film for organic transistors is an insulating film for the purpose of inducing charges in the organic semiconductor layer
- the film thickness of the insulating film is used for the purpose of increasing the charge density of the organic semiconductor layer. The thinner the better. Therefore, it is difficult to apply the above-described organic material requiring a film thickness of 1 ⁇ m or more as a material for the gate insulating film as it is.
- Electronic devices other than organic transistors rarely require such a high electric field, and it can be said that gate insulating films for organic transistors are required to have extremely high performance compared to insulating films for other applications.
- the gate insulating film for an organic transistor has a film thickness of 1 ⁇ m or less, a low leakage current density (for example, a volume resistivity of 10 15 ⁇ cm or more (at 1 MV / cm)), and a high breakdown voltage (1 MV / cm or more). It is necessary to satisfy.
- Non-Patent Document 1 Since the gate insulating film is in contact with the organic semiconductor layer of the organic transistor, it is known that the surface free energy (water contact angle) and polarity of the gate insulating film affect the mobility of the organic transistor. (Non-Patent Document 1). In order to increase the mobility, it is preferable that the surface of the gate insulating film is flat and has low surface free energy. On the other hand, when the surface free energy of the gate insulating film is too low, there is also a problem that an organic semiconductor cannot be formed using an organic semiconductor coating solution. In addition, it is considered that the characteristics of the organic transistor deteriorate due to the influence of moisture and oxygen in the air (Non-patent Document 2).
- the case where moisture and oxygen are adsorbed on the organic semiconductor layer the case where moisture and oxygen are adsorbed on the gate insulating film is also conceivable. Therefore, in order to stabilize the on / off ratio, moisture absorption of the gate insulating film is possible. And oxygen adsorption must also be considered.
- the material design of the gate insulating film for organic transistors needs to consider the characteristics of the organic transistor in addition to the basic performance as an insulating film, and it is difficult to apply the existing insulating film material as it is. It is.
- the biggest obstacle to putting organic transistors into practical use is the heat resistance problem of plastic substrates.
- This problem is that a relatively inexpensive plastic substrate such as PEN (polyethylene naphthalate) or PET (polyethylene terephthalate) has low heat resistance, and other members such as a gate insulating film formed on the plastic substrate are baked. The temperature is limited by the heat resistance of the plastic substrate.
- PEN polyethylene naphthalate
- PET polyethylene terephthalate
- a low-temperature curable polyimide precursor disclosed in Non-Patent Document 3 has been proposed.
- the solvent capable of dissolving this polyimide precursor is limited to some solvents such as amides, and cannot be said to be an insulating film forming material that is easily soluble over a wide variety of solvents.
- the insulating material that can produce a gate insulating film having basic performance as an insulating film, such as high mobility of organic transistors, high on / off ratio, and little change in threshold voltage over time.
- the proposed insulating material still leaves room for improvement.
- an insulating material that satisfies not only the insulating characteristics as a gate insulating film but also various characteristics of the transistor so that a highly reliable thin film transistor can be obtained when the insulating film is used in a thin film transistor. It was done. Furthermore, in addition to such electrical characteristics as an insulating material, a material that is excellent in operability as a material, that is, an insulating material that is easily soluble over all solvents and can easily form a gate insulating film has been demanded.
- the present invention has been made in view of the above-mentioned present situation. From the viewpoint of practicality, the present invention has not only high insulation of the gate insulating film, but also electric characteristics of the element of the thin film transistor, and further solubility in a solvent.
- An object is to provide a novel gate insulating film forming agent in consideration.
- the present inventors have formed a gate insulating film by forming a cured film from a compound that includes a specific structural unit having a pyrimidinetrione ring and is easily soluble. It has been found that when a gate insulating film is formed, it has high insulating properties, and when a thin film transistor is produced using this gate insulating film, good organic transistor characteristics can be obtained.
- the present invention includes, as a first aspect, a gate insulating film for a thin film transistor comprising an oligomer compound or a polymer compound including a structural unit having a pyrimidinetrione ring having a hydroxyalkyl-containing group as a substituent on a nitrogen atom. Relates to the forming agent.
- the present invention relates to the gate insulating film forming agent for a thin film transistor according to the first aspect, wherein the oligomer compound or polymer compound is a compound containing a structural unit represented by the following formula [1].
- X is a structural unit represented by the formula [2] or the formula [3], and Q 1 , Q 2 and Q 3 are each independently a hydrogen atom or an optionally branched carbon atom having 1 to 6 alkyl groups, alkenyl groups having 3 to 6 carbon atoms, alkoxy groups having 1 to 6 carbon atoms, alkoxycarbonyl groups having 1 to 6 carbon atoms, phenyl groups, trifluoromethyl groups, pentafluoroethyl groups or cyano
- a 1 to A 6 each independently represents a hydrogen atom, a methyl group or an ethyl group, n is an integer of 1 to 500, and k and h each independently represent 1 or 2.
- the oligomer compound or polymer compound is a reaction product of a compound represented by the following formula [4] and at least one compound selected from the compounds represented by the formula [5] and the formula [6]. It is related with the gate insulating-film formation agent for thin-
- Q 1 , Q 2 and Q 3 are each independently a hydrogen atom, an optionally branched alkyl group having 1 to 6 carbon atoms, an alkenyl group having 3 to 6 carbon atoms, or 1 to 1 carbon atoms
- a 1 to A 6 and A ′ 1 to A ′ 6 are each independently And represents a hydrogen atom, a methyl group or an ethyl group, and k and h each independently represent 1 or 2.
- As a 4th viewpoint it is related with the gate insulating film formed using the gate insulating-film formation agent for thin-film transistors as described in any one of a 1st viewpoint thru
- a thin film transistor which has a gate insulating film as described in a 4th viewpoint.
- a thin film transistor including a step of applying a gate insulating film forming agent for a thin film transistor according to any one of the first aspect to the third aspect to a substrate and baking at a temperature of 180 ° C. or lower.
- the present invention relates to a method for manufacturing a gate insulating film.
- the thin film transistor gate insulating film forming agent according to any one of the first to third aspects is applied to a substrate, and then fired at a temperature of 180 ° C. or lower to form a thin film transistor gate insulating film.
- a method of manufacturing a thin film transistor including a step of forming a semiconductor layer of the thin film transistor by applying an organic semiconductor.
- the gate insulating film forming agent for a thin film transistor of the present invention can form a film by a coating method, and can produce a gate insulating film at a baking temperature of 180 ° C. or lower.
- the gate insulating film forming agent for thin film transistors of the present invention is easily soluble in a wide variety of solvents, that is, the solvent solubility is high and the solid content concentration can be easily adjusted.
- the gate insulating film can be easily formed.
- the gate insulating film of the present invention formed using the above-described gate insulating film forming agent for thin film transistors satisfies the level of insulation required as a gate insulating film, and also has a small gate leakage current.
- the breakdown voltage is higher than that of a conventional insulating film mainly composed of an acrylic skeleton, and it is necessary to apply a high electric field to the gate insulating film. High reliability as a gate insulating film for a thin film transistor.
- the thin film transistor having the gate insulating film of the present invention should be an organic thin film transistor having a small source-drain leakage current, a large on / off ratio, a high field effect mobility, and a small threshold voltage shift. It is possible to maintain these electrical characteristics for a longer period of time.
- the gate insulating film forming agent for a thin film transistor of the present invention contains an oligomer compound or a polymer compound (hereinafter also referred to as a specific polymer) containing a structural unit having a pyrimidinetrione ring having a hydroxyalkyl-containing group as a substituent on a nitrogen atom.
- a specific polymer a polymer compound containing a structural unit having a pyrimidinetrione ring having a hydroxyalkyl-containing group as a substituent on a nitrogen atom.
- it contains a solvent if desired, and further contains a crosslinking agent, a crosslinking catalyst, a surfactant, a coupling agent and the like as optional components.
- the specific polymer used in the present invention is an oligomer compound or polymer compound containing a structural unit having a pyrimidinetrione ring having a hydroxyalkyl-containing group as a substituent on a nitrogen atom, and preferably represented by the following formula [1] A compound containing a structural unit.
- X is a structural unit represented by the formula [2] or [3], and Q 1 , Q 2 and Q 3 are each independently a hydrogen atom or an optionally branched carbon atom having 1 to 6 alkyl groups, alkenyl groups having 3 to 6 carbon atoms, alkoxy groups having 1 to 6 carbon atoms, alkoxycarbonyl groups having 1 to 6 carbon atoms, phenyl groups, trifluoromethyl groups, pentafluoroethyl groups or cyano Represents a group.
- a 1 to A 6 and A ′ 1 to A ′ 6 each independently represent a hydrogen atom, a methyl group or an ethyl group.
- N is an integer of 1 to 500, and k and h each independently represent 1 or 2.
- Q 1 and Q 3 may be independently different or the same.
- Examples of the alkyl group having 1 to 6 carbon atoms include a methyl group, an ethyl group, a normal pentyl group, an isopropyl group, an isobutyl group, an isopentyl group, a 1-methylbutyl group, a 1-methylpentyl group, and a cyclohexyl group. It is done.
- Examples of the alkenyl group having 3 to 6 carbon atoms include allyl group, 2-butenyl group, 3-butenyl group, and 2-pentenyl group.
- alkoxy group having 1 to 6 carbon atoms examples include a methoxy group, an ethoxy group, an n-propoxy group, an isopropoxy group, an allyloxy group, an n-butoxy group, an isobutoxy group, a sec-butoxy group, a tert-butoxy group, A pentyloxy group, a hexyloxy group, etc. are mentioned.
- alkoxycarbonyl group having 1 to 6 carbon atoms examples include methoxycarbonyl group, ethoxycarbonyl group, n-propoxycarbonyl group, isopropoxycarbonyl group, n-butoxycarbonyl group, tert-butoxycarbonyl group, sec-butoxycarbonyl group.
- the substituents represented by Q 1 , Q 2 and Q 3 are each an alicyclic group such as an alkyl group, an alkenyl group, a fluoroalkyl group, or cyclohexane. When it is a group, the insulating property of the specific polymer increases, which is more preferable.
- the molecular weight of the specific polymer is not particularly limited. However, if the molecular weight is too low, the solvent solubility may be too high to endure the transistor manufacturing process. If the molecular weight is too high, the solvent solubility may be low. There is a possibility that a gate insulating film forming agent for a thin film transistor cannot be obtained. For this reason, as a suitable molecular weight, it is 1,000 to 200,000 as a weight average molecular weight (polystyrene conversion), for example, More preferably, it is 5,000 to 50,000.
- the means for obtaining the specific polymer is not particularly limited.
- the compound represented by the following formula [4] and at least one compound selected from the compounds represented by the formula [5] and the formula [6] It can be obtained by polycondensation reaction in a suitable organic solvent.
- each of the compounds represented by the formula [4], the formula [5] and the formula [6] may be one kind or plural kinds.
- Q 1 , Q 2 and Q 3 are each independently a hydrogen atom, an optionally branched alkyl group having 1 to 6 carbon atoms, an alkenyl group having 3 to 6 carbon atoms, or 1 to 1 carbon atoms.
- a 1 to A 6 and A ′ 1 to A ′ 6 each independently represent a hydrogen atom, a methyl group or an ethyl group.
- K and h each independently represent 1 or 2.
- Specific examples of the compound represented by the formula [4] include compounds represented by the following formulas (B-1) to (B-8). Among these, compounds represented by formulas (B-1) to (B-6) are more preferable because specific polymers having high insulating properties are easily obtained.
- Preferred examples of the compound represented by the above formula [5] include compounds represented by the following formulas (A-1) to (A-11). Among these, compounds represented by formulas (A-1) to (A-9) are more preferable because specific polymers having high insulating properties are easily obtained.
- Preferred examples of the compound represented by the above formula [6] include compounds represented by the following formulas (C-1) to (C-8).
- the method for obtaining the specific polymer usually comprises a compound represented by the formula [4] and at least one compound selected from the compounds represented by the formula [5] and the formula [6] in an organic solvent. Mix and allow polycondensation reaction. Specifically, heating and stirring a solution in which a compound represented by the formula [4] and at least one compound selected from the formula [5] and the formula [6] are dispersed or dissolved in an organic solvent. To react. In that case, it is also possible to use a catalyst.
- the polycondensation reaction may be performed, or the individual polycondensation reactions may be sequentially performed.
- the number of moles of the compound The number of moles of at least one compound selected from the compounds represented by formula [5] and formula [6] is preferably 0.5: 1 to 1.5: 1. Similar to a normal polycondensation reaction, the closer the molar ratio is to 1: 1, the higher the degree of polymerization of the compound produced and the higher the molecular weight.
- organic solvent used in the polycondensation reaction examples include ethyl lactate, butyl lactate, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, N, N-dimethylformamide, N, N-dimethylformacetamide, N-methyl-2- Pyrrolidone, N-methylcaprolactam, dimethyl sulfoxide, tetramethyl urea, pyridine, dimethyl sulfone, hexamethyl sulfoxide, ⁇ -butyrolactone, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, Diethylene glycol monoethyl ether, propylene glycol, propylene glycol propyl ether Tate, methyl ethyl ketone, cyclopentanone, cyclohexanone, e
- quaternary ammonium salts such as benzyltriethylammonium chloride, tetrabutylammonium chloride, tetraethylammonium bromide, or phosphonium salts such as triphenylphosphine, ethyltriphenylphosphonium bromide, tetrabutylphosphonium bromide, etc. are catalyzed. Can be suitably used.
- the compound to be reacted that is, at least selected from compounds represented by formula [4] and compounds represented by formula [5] and formula [6]) It is preferable to use in the range of 0.001 to 50% by mass with respect to the total mass of one compound).
- reaction temperature and reaction time of the polycondensation reaction depend on the compound used, the concentration, etc., but are appropriately selected from the range of reaction time of 0.1 to 100 hours and reaction temperature of 20 to 200 ° C., for example.
- the reaction solution obtained as described above may be used as it is as a gate insulating film forming agent for thin film transistors.
- the reaction solution contains a catalyst, unreacted monomers, etc., After purification, it is preferably used as a gate insulating film forming agent.
- reaction product For the purification of the reaction product, a method in which the reaction solution is poured into a stirring poor solvent, the reaction product is precipitated, and this is filtered is simple. Although it does not specifically limit as a poor solvent used in this case, Methanol, hexane, heptane, ethanol, toluene, water, ether etc. can be illustrated. After filtering the precipitate, the reaction product is preferably washed with the poor solvent. Thereafter, the reaction product can be dried at room temperature or under reduced pressure at normal temperature or reduced pressure to obtain a powder form.
- the impurities in the reaction product can be further reduced by repeating the operation of further dissolving the powdered reaction product in a good solvent and reprecipitation in a poor solvent 2 to 10 times.
- the purification efficiency is further improved.
- a terminal blocking agent can be used for the purpose of improving heat resistance and solvent solubility.
- a terminal group (imide group) of a reaction product of the compound represented by the formula [4] and at least one compound selected from the compounds represented by the formulas [5] and [6] And compounds having reactivity with epoxy groups) can be used.
- examples of the compound having reactivity with the imide group include various epoxy compounds, halides, and isocyanates.
- a compound represented by the following formula [7] is preferable from the viewpoint of transparency, heat resistance, insulation, and the like.
- each of P 1 and P 2 is independently a hydrogen atom, an optionally branched alkyl group having 1 to 6 carbon atoms, an alkenyl group having 3 to 6 carbon atoms, or an alkoxy group having 1 to 6 carbon atoms.
- T 1 , T 2 and T 3 are each independently a hydrogen atom, a methyl group or ethyl. Represents a group.
- examples of the compound having reactivity with the epoxy group include imide, isocyanuric acid, carboxylic acid, isocyanate, amine, acid anhydride, halide, ester, alcohol, etc. Can be used.
- imide, isocyanuric acid, carboxylic acid, isocyanate, and amine are preferable because they are easy to handle.
- a compound represented by the following formula [8] is preferable from the viewpoint of transparency, heat resistance, insulation, and the like.
- each of P 3 and P 4 is independently a hydrogen atom, an optionally branched alkyl group having 1 to 6 carbon atoms, an alkenyl group having 3 to 6 carbon atoms, or an alkoxy group having 1 to 6 carbon atoms.
- the gate insulating film forming agent for a thin film transistor of the present invention contains a specific polymer, optionally a solvent, and further contains other additives as described later if desired. Many of the forming agents are often used in the form of a coating solution dissolved in a solvent. In that case, solid content is 0.5-30 mass%, for example, and is 5-30 mass%, for example. The solid content here means the mass obtained by removing the solvent from the gate insulating film forming agent for thin film transistors.
- the solvent used is ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, propylene glycol, Propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol propyl ether acetate, propylene glycol monobutyl ether, propylene glycol monobutyl ether acetate, dipropylene glycol monomethyl ether, methyl ethyl ketone, cyclopentanone, cyclohexanone, 2-hydroxy group Ethyl pionate, ethyl 2-hydroxy-2-methylpropionate, ethyl ethoxyacetate, ethyl hydroxyacetate, methyl 2-hydroxy-3-methylbutano
- solvents may be appropriately selected and used according to the molecular weight of the oligomer compound or polymer compound contained in the gate insulating film forming agent for thin film transistors of the present invention.
- a plurality of types of solvents can be mixed and used.
- the reaction solution obtained as it is was used as a gate for a thin film transistor.
- An insulating film forming agent can also be used. In that case, the same solvent as the solvent used for the polycondensation reaction or a different solvent may be added as a solvent for dilution.
- the gate insulating film forming agent for a thin film transistor of the present invention can be crosslinked by heating after being applied to a substrate for the purpose of preventing intermixing with a semiconductor material or electrode material to be overcoated. That is, the forming agent can further contain a crosslinking agent and a crosslinking catalyst component as long as the effects of the present invention are not impaired.
- cross-linking agent examples include melamine compounds or substituted urea compounds having at least two cross-linking substituents such as a methylol group and a methoxymethyl group, or polymer compounds containing an epoxy group.
- Specific examples include compounds such as methoxymethylated glycouril or methoxymethylated melamine, and tetramethoxymethylglycoluril or hexamethoxymethylmelamine is preferable.
- compounds such as tetramethoxymethylurea and tetrabutoxymethylurea are also included.
- the addition amount of the crosslinking agent is appropriately selected depending on the type of solvent used in the gate insulating film forming agent for thin film transistors and the required solution viscosity, but the oligomer compound or polymer contained in the gate insulating film forming agent for thin film transistors. It is 0.1 to 100 parts by mass, preferably 1 to 60 parts by mass, and more preferably 10 to 40 parts by mass with respect to 100 parts by mass of the total mass of the compound.
- cross-linking agents may promote a cross-linking reaction by self-condensation by acting as a cross-linking catalyst, but the cross-linking substituents possessed by the specific polymer contained in the gate insulating film forming agent for thin film transistors of the present invention, for example, 1] may cause a crosslinking reaction with a hydroxy group in the structural unit represented by [1].
- the gate insulating film forming agent for a thin film transistor of the present invention can contain an acid compound as a crosslinking catalyst.
- the acid compound include sulfonic acid compounds such as p-toluenesulfonic acid, trifluoromethanesulfonic acid, and pyridinium-p-toluenesulfonate, and carboxylic acids such as salicylic acid, sulfosalicylic acid, citric acid, benzoic acid, and hydroxybenzoic acid.
- An acid compound etc. can be mentioned.
- Examples of the acid compound include onium salt compounds, sulfonimide compounds, and disulfonyldiazomethane compounds, which are compounds that generate an acid by the action of light or heat.
- onium salt compounds include diphenyliodonium hexafluorophosphate, diphenyliodonium trifluoromethanesulfonate, diphenyliodonium nonafluoro-n-butanesulfonate, diphenyliodonium perfluoro-n-octanesulfonate, diphenyliodonium camphorsulfonate, bis (4-tert-butyl Phenyl) iodonium camphorsulfonate and iodonium salt compounds such as bis (4-tert-butylphenyl) iodonium trifluoromethanesulfonate, and triphenylsulfonium hexafluoroantimonate, triphenylsulf
- sulfonimide compounds include N- (trifluoromethanesulfonyloxy) succinimide, N- (nonafluoro-n-butanesulfonyloxy) succinimide, N- (camphorsulfonyloxy) succinimide, and N- (trifluoromethanesulfonyloxy) naphthalimide. Is mentioned.
- disulfonyldiazomethane compound examples include bis (trifluoromethylsulfonyl) diazomethane, bis (cyclohexylsulfonyl) diazomethane, bis (phenylsulfonyl) diazomethane, bis (p-toluenesulfonyl) diazomethane, and bis (2,4-dimethylbenzenesulfonyl). And diazomethane, and methylsulfonyl-p-toluenesulfonyldiazomethane.
- Examples of compounds that generate acid by the action of light or heat include benzoin tosylate, pyrogallol methanesulfonic acid triester and sulfonic acid ester compounds such as nitrobenzyl-9,10-diethoxyanthracene-2-sulfonate, and phenyl. And halogen compounds such as -bis (trichloromethyl) -s-triazine. These acid compounds can be used alone or in combination of two or more.
- the addition amount of the cross-linking catalyst varies depending on the type of solvent used in the gate insulating film forming agent for thin film transistors and the required solution viscosity, but the amount of the oligomeric compound or polymer compound contained in the gate insulating film forming agent for thin film transistors. It is 0.01 to 25 parts by mass, preferably 0.1 to 5 parts by mass, and more preferably 0.1 to 2.5 parts by mass with respect to 100 parts by mass of the total mass.
- a surfactant can be blended in order to suppress the occurrence of pinholes and striations and to further improve the coating property against surface unevenness.
- surfactant examples include polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, polyoxyethylene alkyl ethers such as polyoxyethylene oleyl ether, polyoxyethylene octylphenol ether, polyoxyethylene nonylphenol ether.
- polyoxyethylene alkyl aryl ethers polyoxyethylene / polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monooleate, sorbitan trioleate, sorbitan tristearate, etc.
- Sorbitan fatty acid esters polyoxyethylene sorbitan monolaurate, polyoxyethylene Nonionic surfactants such as polyoxyethylene sorbitan fatty acid esters such as rubitan monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan trioleate, polyoxyethylene sorbitan tristearate, trade name EFTOP EF301 , EF303, EF352 (manufactured by Gemco Co., Ltd.), trade names Megafac F171, F173, R-08, R-30 (DIC Corporation (formerly Dainippon Ink & Chemicals)), Florard FC430, FC431 (Product name: Asahi Guard AG710, Surflon S-382, SC101, SC102, SC103, SC104, SC105, SC106 (manufactured by Asahi Glass Co., Ltd.) Ma KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.), and the like.
- the blending amount of these surfactants is usually 1% by mass or less, preferably 0.5% by mass or less, based on the total solid content of the gate insulating film forming agent for thin film transistors of the present invention.
- These surfactants may be added alone or in combination of two or more.
- the gate insulating film forming agent for thin film transistors of the present invention may further contain a coupling agent for the purpose of improving the adhesion between the forming agent and the substrate as long as the effects of the present invention are not impaired. it can.
- the coupling agent include functional silane-containing compounds and epoxy group-containing organic compounds.
- the content thereof is preferably 0.1 to 30 parts by mass with respect to 100 parts by mass of the oligomer compound or polymer compound contained in the gate insulating film forming agent for thin film transistors. More preferably, it is 1 to 20 parts by mass.
- the gate insulating film forming agent for thin film transistors of the present invention is a dip method, spin coating method on a general-purpose plastic substrate or glass substrate such as polypropylene, polyethylene, polycarbonate, polyethylene terephthalate, polyethersulfone, polyethylene naphthalate, and polyimide.
- the coating film can be formed by coating by a transfer printing method, a roll coating method, an ink jet method, a spray method, a brush coating method, or the like, and then pre-dried in a hot plate or an oven.
- the cured film which can be used as a gate insulating film is formed by heat-processing (baking) this coating film.
- atmosphere, nitrogen, and a vacuum can be illustrated.
- the firing temperature is preferably 40 ° C. or higher, more preferably 150 ° C. or higher, from the viewpoint of reducing the residual solvent in the coating film. Further, considering the heat resistance of the plastic substrate, it is more desirable to carry out at 180 ° C. or lower. Firing may be performed at two or more stages. Uniformity of the cured film can be further improved by firing in stages.
- the thickness of the gate insulating film of the present invention thus obtained is preferably 5 nm to 5,000 nm, more preferably 50 nm to 1,000 nm, and most preferably 200 nm to 600 nm. If the gate insulating film is too thin, it will break down in a low electric field and will not operate as a transistor. If it is too thick, a high voltage is required to operate the transistor. It is desirable. Note that in the case where a cured film (gate insulating film) having a desired thickness cannot be obtained by a single coating / heating process, the coating / heating process may be repeated until a desired film thickness is obtained.
- the configuration of the thin film transistor of the present invention is not particularly limited as long as the gate insulating film of the present invention is used.
- FIGS. 1 to 4 show structural examples of thin film transistors using the gate insulating film of the present invention.
- the gate electrode 2 is formed on the substrate 1, and the gate electrode 2 is covered with the gate insulating film 3 (or 3a, 3b) of the present invention.
- the source electrode 4 and the drain electrode 4 are provided on the gate insulating film 3, and the semiconductor layer 5 is formed so as to cover them.
- the semiconductor layer 5 is formed on the gate insulating film 3, and the source electrode 4 and the drain electrode 4 are provided thereon.
- a gate insulating film 3b is formed on the gate insulating film 3a, and a source electrode and a drain electrode are provided thereon.
- the semiconductor layer 5 is formed so as to cover them.
- the gate insulating film 3b has a function as a surface treatment film or an electrode forming lower layer film for the source electrode 4 and the drain electrode 4 in addition to a function as an insulating film for controlling the characteristics of the transistor.
- the semiconductor layer 5 is formed on the substrate 1, and the source electrode 4 and the drain electrode 4 are provided so as to cover both the semiconductor layer 5 and the substrate 1.
- the gate insulating film 3 is formed on the semiconductor layer 5, the source electrode 4, and the drain electrode 4, and the gate electrode 2 is disposed thereon.
- Examples of the electrode material (gate electrode, source electrode, drain electrode) used in the thin film transistor of the present invention include metals such as gold, silver, cylinder, aluminum and calcium, and inorganic materials such as carbon black, fullerenes and carbon nanotubes. Furthermore, organic ⁇ -conjugated polymers such as polythiophene, polyaniline, polypyrrole, polyfluorene, and derivatives thereof can be mentioned. These electrode materials may be used alone, but a plurality of materials may be used in combination for the purpose of improving the field effect movement of the thin film transistor, improving the on / off ratio, or controlling the threshold voltage. Different electrode materials may be used for each of the gate electrode, the source electrode, and the drain electrode.
- an electrode As a method for forming an electrode, vacuum deposition, sputtering, or the like is generally used. However, in order to simplify the manufacturing method, an electrode forming method using a coating method such as a spray coating method, a printing method, or an ink jet method is available. Proposed. Examples of electrode materials that can be applied include nano metal fine particles and organic ⁇ -conjugated polymers.
- the solvent for the nano metal ink or the organic ⁇ -conjugated polymer is preferably water or various alcohols since the damage (intermixing) to the gate insulating film of the present invention is small.
- N, N-dimethylformamide, N, N-dimethylacetamide, 2-pyrrolidone, N-methyl-2-pyrrolidone, n-ethyl-2-pyrrolidone, n-vinyl-2-pyrrolidone, N-methylcaprolact Polar solvents such as dimethyl sulfoxide, tetramethylurea and the like are also preferable from the viewpoint of excellent solubility of the electrode material, but these are preferably used in a range where damage to the gate insulating film of the present invention is small.
- the material used for the semiconductor layer included in the thin film transistor of the present invention is not particularly limited as long as it can be formed on the gate insulating film of the present invention, on the above electrode, and on the above plastic substrate.
- Organic low molecular weight materials such as oligothiophene derivatives and phthalocyanine derivatives, ⁇ -conjugated polymers such as polythiophene derivatives, polyphenylene vinylene derivatives and polyfluorene derivatives, oxides such as InGaZnO, InGaO, ZnGaO, InZnO, ZnO and SnO 2 A semiconductor etc. are mentioned.
- a sputtering method As a method for forming these semiconductor materials, a sputtering method, a vacuum deposition method, an inkjet method, a spray method, or the like can be used.
- coating methods such as an ink jet method and a spray method are preferable because they are simple and can reduce manufacturing costs.
- the solvent for the ⁇ -conjugated polymer is not particularly limited as long as it can dissolve or uniformly disperse the solvent and causes little damage (such as intermixing) to the gate insulating film of the present invention.
- Particularly preferred solvents include aromatic hydrocarbon solvents such as toluene, xylene and mesitylene.
- the molecular weight of the polyamic acid obtained by polymerization was measured by a GPC (room temperature gel permeation chromatography) apparatus, and the number average molecular weight and the weight average molecular weight were calculated as polyethylene glycol and polyethylene oxide equivalent values.
- GPC device manufactured by Shodex (GPC-101) Column: manufactured by Shodex (series of KD803 and KD805) Column temperature: 50 ° C Eluent: N, N-dimethylformamide (as additives, lithium bromide-hydrate (LiBr ⁇ H 2 O) 30 mmol / L, phosphoric acid / anhydrous crystal (O-phosphoric acid) 30 mmol / L, tetrahydrofuran) (THF) is 10 ml / L) Flow rate: 1.0 ml / min Standard sample for preparing calibration curve: Standard polyethylene oxide (molecular weight: about 900,000, 150,000, 100,000, 30,000) and polyethylene glycol (molecular weight: about 12, 000, 4,000, 1,000).
- Example 2 Preparation of forming agent B> After dissolving 2.1 g of P-2 (white powder) obtained in Synthesis Example 2 in a mixed solvent of PGME and PGMEA (7: 3), Megafac R-30 (manufactured by DIC) was added as a surfactant. 0.006 g was added to obtain Forming Agent B having a solid content concentration of 20% by mass.
- Example 3 Preparation of forming agent C> After dissolving 2.1 g of P-2 (white powder) obtained in Synthesis Example 2 in a mixed solvent of PGME and PGMEA (7: 3), Megafac R-30 (manufactured by DIC) was added as a surfactant. .006 g, 0.53 g of tetramethoxymethylglycoluril (product name: POWDERLINK 1174 made by Cytec) as a cross-linking agent, and 0.05 g of pyridinium p-toluenesulfonate as a cross-linking catalyst are added, and a solid content concentration of 20% by mass is formed. C was obtained.
- Example 4 Preparation of forming agent D> 10 g of P-3 (white powder) obtained in Synthesis Example 3 is dissolved in a mixed solvent of ⁇ -butyrolactone and dipropylene glycol monomethyl ether (DPM) (8: 2) to form a solid content of 15% by mass. D was obtained.
- DPM dipropylene glycol monomethyl ether
- Example 5 Gate insulating film using forming agent A> On a glass substrate with ITO (2.5 cm square, thickness 0.7 mm), the forming agent A prepared in Example 1 was dropped with a syringe with a 0.2 ⁇ m pore filter and applied by spin coating. Thereafter, in the air, the organic solvent was volatilized by heat treatment (preliminary drying) for 5 minutes on an 80 ° C. hot plate. Next, baking was performed on a hot plate at 180 ° C. for 60 minutes to obtain a gate insulating film having a thickness of 470 nm.
- an aluminum electrode having a diameter of 0.5 mm to 1.5 mm and a film thickness of 100 nm is laminated on the gate insulating film, and the insulating properties of the gate insulating film in which the electrodes are placed above and below the gate insulating film.
- An evaluation sample was produced.
- the vacuum deposition conditions at this time were room temperature, a degree of vacuum of 3 ⁇ 10 ⁇ 3 Pa or less, and an aluminum deposition rate of 0.5 nm / second or less.
- current-voltage characteristics were measured in an air atmosphere at room temperature and humidity of 45% ⁇ 5%.
- the voltage was applied to the aluminum electrode side from 0 V to 80 V with a holding time of 3 seconds every 2 V step, and the specific resistance was obtained from the current value when the electric field was 1 MV / cm. The results are shown in Table 1.
- Example 6 Gate insulating film using forming agent B> Using the forming agent B prepared in Example 2, a gate insulating film was formed on the substrate using the same procedure as in Example 5. Subsequently, a sample for insulation evaluation was prepared using the same procedure as in Example 5, the current-voltage characteristics were measured, and the specific resistance was obtained. The results are shown in Table 1.
- Example 7 Gate insulating film using forming agent C> Using the forming agent C prepared in Example 3, a gate insulating film was formed on the substrate using the same procedure as in Example 5. Subsequently, a sample for insulation evaluation was prepared using the same procedure as in Example 5, the current-voltage characteristics were measured, and the specific resistance was obtained. The results are shown in Table 1.
- Example 8 Gate insulating film using forming agent D> Using the forming agent D prepared in Example 4, the same procedure as in Example 5 was used to form a gate insulating film on the substrate. Subsequently, a sample for insulation evaluation was prepared using the same procedure as in Example 5, the current-voltage characteristics were measured, and the specific resistance was obtained. The results are shown in Table 1.
- the gate insulating films of Examples 5 to 8 showed a specific resistance value of 10 15 ⁇ cm or more, indicating that they can be suitably used as a gate insulating film for a thin film transistor.
- Example 9 P3HT organic thin film transistor using insulating film formed from forming agent A>
- a gate insulating film was produced on the substrate using the same procedure as in Example 5 except that the forming agent A prepared in Example 1 was used and the film thickness was changed to 400 nm.
- the capacitance C of the gate insulating film was calculated from the relative dielectric constant and the film thickness of the insulating film, and found to be 8.0 nF / cm 2 .
- a semiconductor layer was formed over the gate insulating film.
- poly (3-hexylthiophene-2,5-diyl) obtained from Merck Ltd., hereinafter abbreviated as P3HT
- P3HT poly (3-hexylthiophene-2,5-diyl)
- the cross-sectional view of the organic thin film transistor shown in FIG. 2 corresponds to the organic thin film transistor of Example 9.
- the conditions for vacuum deposition of the electrode at this time were room temperature, a degree of vacuum of 1 ⁇ 10 ⁇ 3 Pa or less, and a deposition rate of gold of 0.1 nm / second or less.
- the electrical characteristics in vacuum of the organic thin film transistor obtained as described above were evaluated by measuring the change of the drain current with respect to the gate voltage. Specifically, the source-drain voltage (V D ) is set to ⁇ 40 V, the gate voltage (V G ) is changed from +60 V to ⁇ 40 V in 2 V steps, and the voltage is held for 1 second until the current is sufficiently stabilized. The value was recorded as the measured drain current. For the measurement, a semiconductor parameter analyzer HP4156C (manufactured by Agilent Technologies) was used.
- the drain current ID in the saturated state can be expressed by the following formula. That is, the mobility ⁇ of the organic semiconductor can be obtained from the slope of the graph when the square root of the absolute value of the drain current I D is plotted on the vertical axis and the gate voltage V G is plotted on the horizontal axis.
- I D WC ⁇ (V G ⁇ V T ) 2 / 2L
- W is the channel width of the transistor
- L is the channel length of the transistor
- C is the capacitance of the gate insulating film
- V T is the threshold voltage of the transistor
- ⁇ is the mobility.
- the electrical characteristics of the organic thin film transistor were immediately transferred to a vacuum (vacuum degree of 5 ⁇ 10 ⁇ 2 Pa or less) after the device was completed in order to remove the influence of ambient humidity and active substances, and left for about 30 minutes. Thereafter, the measurement was performed while maintaining the degree of vacuum at 5 ⁇ 10 ⁇ 2 Pa or less.
- Example 10 F8T2 organic thin film transistor using an insulating film formed from forming agent A>
- a gate insulating film was produced on the substrate using the same procedure as in Example 5 except that the forming agent A prepared in Example 1 was used and the film thickness was changed to 470 nm.
- the capacitance C of the gate insulating film was calculated from the relative dielectric constant and the film thickness of the insulating film, and found to be 6.7 nF / cm 2 .
- a semiconductor layer was formed over the gate insulating film.
- poly (9,9-dioctylfluorene-alt-bithiophene) obtained from American Dye Source Co., Ltd., hereinafter abbreviated as F8T2
- F8T2 poly (9,9-dioctylfluorene-alt-bithiophene)
- F8T2 poly (9,9-dioctylfluorene-alt-bithiophene)
- the semiconductor layer about 60 nm of gold is laminated on the semiconductor layer (F8T2 film) using a vacuum deposition apparatus, and source / drain electrodes having a channel length L of 90 ⁇ m and a channel width W of 2 mm are formed.
- a thin film transistor was completed.
- the cross-sectional view of the organic thin film transistor shown in FIG. 2 corresponds to the organic thin film transistor of Example 10.
- the conditions for vacuum deposition of the electrode at this time were room temperature, a degree of vacuum of 1 ⁇ 10 ⁇ 3 Pa or less, and a deposition rate of gold of 0.1 nm / second or less.
- the electrical characteristics in vacuum of the organic thin film transistor obtained as described above were evaluated using the same procedure as in Example 10.
- the source / drain voltage (V D ) was set to ⁇ 100V, and the gate voltage (V G ) was changed from 0V to ⁇ 100V in 4V steps.
- the electrical characteristics of the organic thin film transistor were immediately transferred to a vacuum (vacuum degree of 5 ⁇ 10 ⁇ 2 Pa or less) after the device was completed in order to remove the influence of ambient humidity and active substances, and left for about 30 minutes. Thereafter, the measurement was performed while maintaining the degree of vacuum at 5 ⁇ 10 ⁇ 2 Pa or less.
- the organic thin film transistors of Examples 9 to 10 in which the forming agent A was baked at 180 ° C. and used for the gate insulating film showed good transistor characteristics.
- FIG. 1 is a schematic cross-sectional view showing the structure of a first example thin film transistor having a gate insulating film of the present invention.
- FIG. 2 is a schematic sectional view showing the structure of a second example thin film transistor having a gate insulating film of the present invention.
- FIG. 3 is a schematic cross-sectional view showing the structure of a third example thin film transistor having the gate insulating film of the present invention.
- FIG. 4 is a schematic cross-sectional view showing the structure of a fourth example thin film transistor having a gate insulating film of the present invention.
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Abstract
Description
また、有機トランジスタの動作には、ゲート絶縁膜に1MV/cm以上の極めて高い電界を加える必要がある。有機トランジスタ以外の電子デバイスにおいて、これほど高い電界を必要とするのはほとんどなく、有機トランジスタ用ゲート絶縁膜は他の用途の絶縁膜に比べ極めて高い性能が要求されているといえる。
つまり、有機トランジスタ用ゲート絶縁膜は、膜厚1μm以下で、低いリーク電流密度(例えば、体積抵抗率で1015Ωcm以上(1MV/cm時))、高い絶縁破壊耐圧(1MV/cm以上)を満たす必要がある。
また、空気中の水分や酸素の影響によっても、有機トランジスタの特性は低下するとも考えられている(非特許文献2)。有機半導体層に水分や酸素が吸着されるケースに加えて、ゲート絶縁膜に水分や酸素が吸着されるケースも考えられることから、オン/オフ比を安定させるためには、ゲート絶縁膜の吸湿性や酸素吸着性も考慮しなければならない。
このように有機トランジスタ用ゲート絶縁膜の材料設計は、絶縁膜としての基本的な性能に加えて、有機トランジスタの特性をも考慮する必要があり、既存の絶縁膜材料をそのまま適用することは困難である。
さらに、こうした絶縁材料としての電気特性に加え、材料としての操作性にも優れる材料、すなわち、溶媒全般にわたって易溶解性であり、容易にゲート絶縁膜を形成可能な絶縁材料が求められていた。
第2観点として、前記オリゴマー化合物又はポリマー化合物が、下記式[1]で表される構造単位を含む化合物である、第1観点に記載の薄膜トランジスタ用ゲート絶縁膜形成剤に関する。
第3観点として、前記オリゴマー化合物又はポリマー化合物が、下記式[4]で表される化合物と、式[5]及び式[6]で表される化合物から選ばれる少なくとも一方の化合物との反応生成物である、第1観点又は第2観点に記載の薄膜トランジスタ用ゲート絶縁膜形成剤に関する。
第4観点として、第1観点乃至第3観点のうちのいずれか一項に記載の薄膜トランジスタ用ゲート絶縁膜形成剤を用いて形成されるゲート絶縁膜に関する。
第5観点として、第4観点に記載のゲート絶縁膜を有する薄膜トランジスタに関する。
第6観点として、第1観点乃至第3観点のうちのいずれか一項に記載の薄膜トランジスタ用ゲート絶縁膜形成剤を基板に塗布した後、180℃以下の温度で焼成する工程を含む、薄膜トランジスタ用ゲート絶縁膜の製造方法に関する。
第7観点として、第1観点乃至第3観点のうちのいずれか一項に記載の薄膜トランジスタ用ゲート絶縁膜形成剤を基板に塗布した後、180℃以下の温度で焼成し、薄膜トランジスタ用ゲート絶縁膜を得る工程、及び、薄膜トランジスタの半導体層を有機半導体の塗布により形成する工程を含む、薄膜トランジスタの製造方法に関する。
また、本発明の薄膜トランジスタ用ゲート絶縁膜形成剤は、多種多用な溶媒に対して易溶解性であり、即ち溶媒溶解性が高く、固形分濃度の調整が容易であるため、好適な膜厚を有するゲート絶縁膜を容易に形成することができる。
本発明のゲート絶縁膜は、膜を構成する化合物がイミド骨格を含むため、アクリル骨格を主体として構成された従来の絶縁膜などと比べ絶縁破壊耐圧が高く、ゲート絶縁膜に高電界を加える必要のある薄膜トランジスタ用ゲート絶縁膜としての信頼性が高い。
本発明の薄膜トランジスタ用ゲート絶縁膜形成剤は、窒素原子上の置換基としてヒドロキシアルキル含有基を有するピリミジントリオン環を有する構造単位を含むオリゴマー化合物又はポリマー化合物(以下、特定高分子とも言う)を含有してなり、所望により溶媒を含み、さらに任意成分として架橋剤、架橋触媒、界面活性剤、カップリング剤等を含有するものである。
本発明に用いる特定高分子は、窒素原子上の置換基としてヒドロキシアルキル含有基を有するピリミジントリオン環を有する構造単位を含むオリゴマー化合物又はポリマー化合物であり、好ましくは下記式[1]で表される構造単位を含む化合物である。
A1乃至A6及びA’1乃至A’6はそれぞれ独立して水素原子、メチル基又はエチル基を表す。
またnは1乃至500の整数であり、k及びhはそれぞれ独立に1又は2を表す。
炭素原子数3乃至6のアルケニル基としては、例えば、アリル基、2-ブテニル基、3-ブテニル基及び2-ペンテニル基等が挙げられる。
炭素原子数1乃至6のアルコキシ基としては、例えば、メトキシ基、エトキシ基、n-プロポキシ基、イソプロポキシ基、アリルオキシ基、n-ブトキシ基、イソブトキシ基、sec-ブトキシ基、tert-ブトキシ基、ペンチルオキシ基及びヘキシルオキシ基等が挙げられる。
炭素原子数1乃至6のアルコキシカルボニル基としては、例えば、メトキシカルボニル基、エトキシカルボニル基、n-プロポキシカルボニル基、イソプロポキシカルボニル基、n-ブトキシカルボニル基、tert-ブトキシカルボニル基、sec-ブトキシカルボニル基、ペンチルオキシカルボニル基、シクロペンチルオキシカルボニル基、ヘキシルオキシカルボニル基及びシクロヘキシルオキシカルボニル基等が挙げられる。
その際、式[4]、式[5]及び式[6]で表される化合物はそれぞれ一種類のみであっても、複数種であってもよい。
A1乃至A6及びA’1乃至A’6はそれぞれ独立して水素原子、メチル基又はエチル基を表す。
またk及びhはそれぞれ独立に1又は2を表す。
通常の重縮合反応同様、このモル比が1:1に近いほど生成する化合物の重合度は大きくなり、分子量が増加する。
これら4級アンモニウム塩又はホスホニウム塩等の触媒を用いる場合、反応させる化合物(すなわち、式[4]で表される化合物と、式[5]及び式[6]で表される化合物から選ばれる少なくとも一方の化合物)の総質量に対して0.001乃至50質量%の範囲で用いることが好ましい。
上記重合反応においては、耐熱性および溶媒溶解性を向上させる目的で、末端封止剤を使用する事ができる。末端封止剤としては、式[4]で表される化合物と、式[5]及び式[6]で表される化合物から選ばれる少なくとも一方の化合物との反応生成物の末端基(イミド基及びエポキシ基)と反応性を有する化合物を使用することができる。
特に、透明性、耐熱性、絶縁性などの観点から下記式[7]で表される化合物が好適である。
特に、透明性、耐熱性、絶縁性などの観点から下記式[8]で表される化合物が好適である。
本発明の薄膜トランジスタ用ゲート絶縁膜形成剤は、特定高分子、所望により溶媒を含み、さらに所望により後述するその他の添加剤を含有する。該形成剤の多くは、溶媒に溶解した塗布液の形態で用いられることが多い。
その際、固形分は、例えば0.5乃至30質量%であり、又、例えば5乃至30質量%である。ここで言うところの固形分とは、薄膜トランジスタ用ゲート絶縁膜形成剤から溶媒を除いた質量を意味する。
<架橋剤・架橋触媒>
本発明の薄膜トランジスタ用ゲート絶縁膜形成剤は、上塗りする半導体材料又は電極材料とのインターミキシングの防止を目的として、基板に塗布した後、加熱により架橋させることも可能である。すなわち、該形成剤は、本発明の効果を損なわない限りにおいて、さらに架橋剤及び架橋触媒成分を含むことができる。
オニウム塩化合物としてはジフェニルヨードニウムヘキサフルオロホスフエート、ジフェニルヨードニウムトリフルオロメタンスルホネート、ジフェニルヨードニウムノナフルオロ-n-ブタンスルホネート、ジフェニルヨードニウムパーフルオロ-n-オクタンスルホネート、ジフェニルヨードニウムカンファースルホネート、ビス(4-tert-ブチルフェニル)ヨードニウムカンファースルホネート及びビス(4-tert-ブチルフェニル)ヨードニウムトリフルオロメタンスルホネート等のヨードニウム塩化合物、及びトリフェニルスルホニウムヘキサフルオロアンチモネート、トリフェニルスルホニウムノナフルオロ-n-ブタンスルホネート、トリフェニルスルホニウムカンファースルホネート及びトリフェニルスルホニウムトリフルオロメタンスルホネート等のスルホニウム塩化合物等が挙げられる。
スルホンイミド化合物としては、例えばN-(トリフルオロメタンスルホニルオキシ)スクシンイミド、N-(ノナフルオロ-n-ブタンスルホニルオキシ)スクシンイミド、N-(カンファースルホニルオキシ)スクシンイミド及びN-(トリフルオロメタンスルホニルオキシ)ナフタルイミド等が挙げられる。
ジスルホニルジアゾメタン化合物としては、例えば、ビス(トリフルオロメチルスルホニル)ジアゾメタン、ビス(シクロヘキシルスルホニル)ジアゾメタン、ビス(フェニルスルホニル)ジアゾメタン、ビス(p-トルエンスルホニル)ジアゾメタン、ビス(2,4-ジメチルベンゼンスルホニル)ジアゾメタン、及びメチルスルホニル-p-トルエンスルホニルジアゾメタン等が挙げられる。
また、光や熱の作用によって酸を発生する化合物としては、ベンゾイントシレート、ピロガロールメタンスルホン酸トリエステル及びニトロベンジル-9,10-ジエトキシアントラセン-2-スルホネート等のスルホン酸エステル化合物、及びフェニル-ビス(トリクロロメチル)-s-トリアジン等のハロゲン化合物が挙げられる。
これらの酸化合物は一種のみを使用することができ、または二種以上を組み合わせて使用することができる。
本発明の薄膜トランジスタ用ゲート絶縁膜形成剤には、ピンホールやストリエーション等の発生を抑え、表面むらに対する塗布性をさらに向上させるために、界面活性剤を配合することができる。
また、本発明の薄膜トランジスタ用ゲート絶縁膜形成剤にあっては、該形成剤と基板との密着性を向上させる目的で、本発明の効果を損なわない限りにおいてカップリング剤を更に含有することができる。上記カップリング剤としては、官能性シラン含有化合物やエポキシ基含有有機化合物を挙げることができる。
本発明の薄膜トランジスタ用ゲート絶縁膜形成剤は、ポリプロピレン、ポリエチレン、ポリカーボネート、ポリエチレンテレフタレート、ポリエーテルスルホン、ポリエチレンナフタレート、ポリイミドなどの汎用のプラスチック基板やガラス基板などの上に、ディップ法、スピンコート法、転写印刷法、ロールコート法、インクジェット法、スプレー法、刷毛塗り法等によって塗布し、その後、ホットプレートまたはオーブン等で予備乾燥することにより、塗膜を形成することができる。
上記加熱処理の方法としては特に限定されるものではないが、適切な雰囲気下、即ち大気、窒素等の不活性ガス、真空中等で、ホットプレートやオーブンを用いて行う方法を例示することができる。
焼成温度は、塗膜中の残存溶媒を少なくするという観点から40℃以上が好ましく、より好ましくは150℃以上で実施される。また、プラスチック基板の耐熱性を考慮すると180℃以下で行うことがより望ましい。
焼成は2段階以上の温度変化をつけてもよい。段階的に焼成することで硬化膜の均一性をより高めることができる。
なお、一度の塗布・加熱処理により所望の厚さの硬化膜(ゲート絶縁膜)が得られない場合は、塗布・加熱処理の工程を所望の膜厚となるまで繰り返せばよい。
本発明の薄膜トランジスタは、前出の本発明のゲート絶縁膜を用いたものであればその構成は特に制限されない。一例として、図1乃至図4に本発明のゲート絶縁膜を用いた薄膜トランジスタの構成例を示す。
図1の例では、ゲート絶縁膜3の上にソース電極4とドレイン電極4とが設置されており、これらを覆うように半導体層5が形成されている。
一方、図2の例では、ゲート絶縁膜3の上に半導体層5が形成され、その上にソース電極4とドレイン電極4とが設置されている。
また、図3の例では、ゲート絶縁膜3aの上にゲート絶縁膜3bが形成され、この上にソース電極とドレイン電極が設置されている。半導体層5はこれらを覆うように形成されている。ここでゲート絶縁膜3bは、トランジスタの特性制御のため絶縁膜としての機能の他に、表面処理膜又はソース電極4とドレイン電極4の電極形成用下層膜としての機能も有する。
さらに図4の例では、基板1上に半導体層5が形成されており、この半導体層5と基板1の双方を覆うようにソース電極4とドレイン電極4が設置されている。そしてゲート絶縁膜3は半導体層5とソース電極4とドレイン電極4の上に形成され、その上にゲート電極2が設置された構成となっている。
これらの電極材料は1種類で用いてもよいが、薄膜トランジスタの電界効果移動、オン/オフ比の向上を目的として、もしくは閾値電圧の制御を目的として、複数の材料を組み合わせて用いてもよい。又、ゲート電極、ソース電極、ドレイン電極のそれぞれにおいて異なる電極材料を用いてもよい。
塗布可能な電極材料としては、ナノ金属微粒子や有機π共役ポリマーなどがある。
また、N,N-ジメチルホルムアミド、N,N-ジメチルアセトアミド、2-ピロリドン、N-メチル-2-ピロリドン、n-エチル-2-ピロリドン、n-ビニル-2-ピロリドン、N-メチルカプロラクム、ジメチルスルホキシド、テトラメチル尿素などの極性溶媒も電極材料の溶解性に優れる観点から好ましいが、これらは、本発明のゲート絶縁膜へのダメージが少ない範囲において使用することが好ましい。
成膜の際、π共役ポリマーの溶媒としては、これらを溶解または均一に分散させることができ、かつ本発明のゲート絶縁膜へのダメージ(インターミキシングなど)が少ないものであれば特に限定されず、特に好ましい溶媒としては、トルエン、キシレン、メシチレンなど芳香族炭化水素系の溶媒を例示する事ができる。
本実施例において、重合し得られたP-1、P-2、P-3の分子量はGPC(常温ゲル浸透クロマトグラフィー)装置によって測定し、ポリスチレン換算値として数平均分子量と重量平均分子量を算出した。
GPC装置:JASCO社製 (JASCO-BORWIN Ver.1.50)
カラム:Shodex社製 (804、805の直列)
カラム温度:40℃
溶離液:テトラヒドロフラン
流速:1.0ml/分
検量線作成用標準サンプル:標準ポリスチレン(210,000、70,600、28,600、10,900、3,000、1,300)
GPC装置:(株)Shodex社製 (GPC-101)
カラム:Shodex社製 (KD803、KD805の直列)
カラム温度:50℃
溶離液:N,N-ジメチルホルムアミド(添加剤として、臭化リチウム-水和物(LiBr・H2O)が30mmol/L、リン酸・無水結晶(O-リン酸)が30mmol/L、テトラヒドロフラン(THF)が10ml/L)
流速:1.0ml/分
検量線作成用標準サンプル:標準ポリエチレンオキサイド(分子量 約900,000、150,000、100,000、30,000)、および、ポリマーラボラトリー社製 ポリエチレングリコール(分子量 約12,000、4,000、1,000)。
膜厚は、カッターナイフで膜の一部を剥離し、その段差を全自動微細形状測定機(ET4000A、(株)小坂研究所社製)を用いて、測定力を10μN、掃引速度を0.05mm/秒として測定することにより求めた。
モノアリルジグリシジルイソシアヌル酸(100g)、ジエチルバルビツール酸(66.4g)、及びベンジルトリエチルアンモニウムクロリド(4.1g)をプロピレングリコールモノメチルエーテル(682g)に溶解させた後、130℃で24時間反応させ、高分子化合物の溶液を得た。
得られた高分子化合物をメタノール溶媒に滴下し、析出した沈殿物を濾過し、反応生成物P-1(白色粉末)を得た。
反応生成物P-1のGPC分析を行ったところ、標準ポリスチレン換算にて重量平均分子量(Mw)は9,970であった。
なお、本合成例によって得られた反応生成物P-1は、下記式[S-1]で表される構造単位を有する。
1,3-ジグリシジル-5,5-ジエチルピリミジントリオン(100g)、ジエチルバルビツール酸(66.4g)、及びベンジルトリエチルアンモニウムクロリド(4.1g)をプロピレングリコールモノメチルエーテル(682g)に溶解させた後、130℃で24時間反応させ、高分子化合物の溶液を得た。
得られた高分子化合物をメタノール溶媒に滴下し、析出した沈殿物を濾過し、反応生成物P-2(白色粉末)を得た。
反応生成物P-2のGPC分析を行ったところ、標準ポリスチレン換算にて重量平均分子量(Mw)は3,300であった。
なお、本合成例によって得られた反応生成物P-2は、下記式[S-2]で表される構造単位を有する。
モノアリルジグリシジルイソシアヌル酸(100g)、5-エチル-5-フェニルバルビツール酸(66.4g)、及びベンジルトリエチルアンモニウムクロリド(4.1g)をプロピレングリコールモノメチルエーテル(682g)に溶解させた後、130℃で24時間反応させ、高分子化合物の溶液を得た。
得られた高分子化合物をメタノール溶媒に滴下し、析出した沈殿物を濾過し、反応生成物P-3(白色粉末)を得た。
反応生成物P-3のGPC分析を行ったところ、標準ポリスチレン換算にて重量平均分子量(Mw)は12,400であった。
なお、本合成例によって得られた反応生成物P-3は、下記式[S-3]で表される構造単位を有する。
窒素気流下中、200mLの4つ口フラスコに、4,4’-ジアミノジフェニルエーテル 8.01g(0.040mol)を入れ、N-メチル-2-ピロリドン(NMP) 91.9gに溶解させた後、ピロメリット酸二無水物 8.20g(0.038mol)を加え、これを23℃で2時間攪拌して重合反応を行いさらにNMPで希釈することで、ポリアミド酸6重量%溶液を得た。
得られたポリアミド酸の重量平均分子量(Mw)はMw=25,200であった。
<実施例1:形成剤Aの調製>
合成例1で得られたP-1(白色粉末)10gを、プロピレングリコールモノメチルエーテル(PGME)とプロピレングリコールモノメチルエーテルアセテート(PGMEA)(7:3)の混合溶媒に溶解した後、界面活性剤としてメガファックR-30(DIC(株)製)を0.03g添加し、固形分濃度13質量%の形成剤Aを得た。
合成例2で得られたP-2(白色粉末)2.1gを、PGMEとPGMEA(7:3)の混合溶媒に溶解した後、界面活性剤としてメガファックR-30(DIC製)を0.006g添加し、固形分濃度20質量%の形成剤Bを得た。
合成例2で得られたP-2(白色粉末)2.1gを、PGMEとPGMEA(7:3)の混合溶媒に溶解した後、界面活性剤としてメガファックR-30(DIC製)を0.006g、さらに架橋剤としてテトラメトキシメチルグリコールウリル(製品名:POWDERLINK1174 サイテック社製)を0.53g、架橋触媒としてピリジニウムp-トルエンスルホネート0.05gを添加し、固形分濃度20質量%の形成剤Cを得た。
合成例3で得られたP-3(白色粉末)10gを、γ-ブチロラクトンとジプロピレングリコールモノメチルエーテル(DPM)(8:2)の混合溶媒に溶解し、固形分濃度15質量%の形成剤Dを得た。
<実施例5:形成剤Aを用いたゲート絶縁膜>
ITO付きガラス基板(2.5cm角、厚み0.7mm)に、実施例1で調製した形成剤Aを0.2μm孔フィルタを付けたシリンジで滴下し、スピンコート法により塗布した。その後大気中で、80℃のホットプレートで5分間加熱処理(予備乾燥)し、有機溶媒を揮発させた。次いで180℃のホットプレートで60分間焼成し、膜厚470nmのゲート絶縁膜を得た。
次に真空蒸着装置を用いて、上記ゲート絶縁膜上に直径0.5mm乃至1.5mm、膜厚100nmのアルミニウム電極を積層させ、ゲート絶縁膜の上下に電極を設置したゲート絶縁膜の絶縁性評価用サンプルを作製した。なおこのときの真空蒸着条件は、室温、真空度3×10-3Pa以下、アルミニウムの蒸着速度0.5nm/秒以下とした。
該サンプルを用いて、室温、湿度45%±5%の大気雰囲気中で電流-電圧特性を測定した。電圧はアルミニウム電極側に正の電圧を0Vから80Vまで2Vステップ毎に3秒間の保持時間を設けながら印加し、電界1MV/cmのときの電流値から比抵抗を求めた。結果を表1に示す。
実施例2で調製した形成剤Bを用い、実施例5と同様の手順を用いて、基板上にゲート絶縁膜を作製した。
続いて、実施例5と同様の手順を用いて絶縁性評価用のサンプルを作製し、電流-電圧特性を測定し、比抵抗を求めた。結果を表1に示す。
実施例3で調製した形成剤Cを用い、実施例5と同様の手順を用いて、基板上にゲート絶縁膜を作製した。
続いて、実施例5と同様の手順を用いて絶縁性評価用のサンプルを作製し、電流-電圧特性を測定し、比抵抗を求めた。結果を表1に示す。
実施例4で調製した形成剤Dを用い、実施例5と同様の手順を用いて、基板上にゲート絶縁膜を作製した。
続いて、実施例5と同様の手順を用いて絶縁性評価用のサンプルを作製し、電流-電圧特性を測定し、比抵抗を求めた。結果を表1に示す。
比較合成例1で調製したポリアミド酸溶液を用い、実施例5と同様の手順を用いて、基板上にゲート絶縁膜を作製した。
続いて、実施例5と同様の手順を用いて絶縁性評価用のサンプルを作製し、電流-電圧特性を測定し、比抵抗を求めた。結果を表1に示す。
<実施例9:形成剤Aから形成した絶縁膜を用いたP3HT有機薄膜トランジスタ>
実施例1で調製した形成剤Aを用い、膜厚を400nmとした以外は実施例5と同様の手順を用いて、基板上にゲート絶縁膜を作製した。
このゲート絶縁膜の静電容量Cを比誘電率と該絶縁膜の膜厚から算出したところ、8.0nF/cm2であった。
まず、ポリ(3-ヘキシルチオフェン-2,5-ジイル)(メルク(株)より入手、以後、P3HTと略す)を2質量%の濃度でキシレンに溶解してP3HTの塗布溶液を調製し、該塗布溶液を前述のゲート絶縁膜上にスピンコート法を用い、酸素濃度0.5ppm以下の窒素雰囲気下で塗布した。その後、溶媒を完全に揮発させるため、真空状態で100℃、60分間加熱処理し、半導体層を形成した。
なおこのときの電極の真空蒸着時の条件は、室温、真空度1×10-3Pa以下、金の蒸着速度0.1nm/秒以下とした。
詳細には、ソース・ドレイン電圧(VD)を-40Vとして、ゲート電圧(VG)を+60Vから-40Vまで、2Vステップで変化させ、電流が十分安定するまで1秒間電圧を保持した後の値をドレイン電流の測定値として記録した。なお測定には、半導体パラメータアナライザー HP4156C(アジレント・テクノロジー(株)製)を用いた。
ID=WCμ(VG-VT)2/2L
実施例1で調製した形成剤Aを用い、膜厚を470nmとした以外は実施例5と同様の手順を用いて、基板上にゲート絶縁膜を作製した。
このゲート絶縁膜の静電容量Cを比誘電率と該絶縁膜の膜厚から算出したところ、6.7nF/cm2であった。
まず、ポリ(9,9-ジオクチルフルオレン-アルト-ビチオフェン)(アメリカンダイソース社より入手、以後、F8T2と略す)を1.5質量%の濃度でキシレンに溶解してF8T2の塗布溶液を調整し、該塗布溶液を前述のゲート絶縁膜上にスピンコート法を用い、酸素濃度0.5ppm以下の窒素雰囲気下で塗布した。その後、溶媒を完全に揮発させるため、真空状態で135℃、60分間加熱処理し、半導体層を形成した。
なおこのときの電極の真空蒸着時の条件は、室温、真空度1×10-3Pa以下、金の蒸着速度0.1nm/秒以下とした。
比較合成例1で得られたポリアミド酸溶液を用い、膜厚を370nmとした以外は実施例9と同様の手順を用いて有機薄膜トランジスタを作製した。
このゲート絶縁膜の静電容量Cを比誘電率と該絶縁膜の膜厚から算出したところ、8.6nF/cm2であった。
P3HTの移動度μは、1×10-3cm2/Vsと算出されたが、オン/オフ比は101のオーダーであり、有機薄膜トランジスタは正常に動作しなかった(表2)。
2 ・・・・・・・・ ゲート電極
3(3a、3b)・・ ゲート絶縁膜
4 ・・・・・・・・ ソース電極、ドレイン電極
5 ・・・・・・・・ 半導体層
Claims (7)
- 窒素原子上の置換基としてヒドロキシアルキル含有基を有するピリミジントリオン環を有する構造単位を含むオリゴマー化合物又はポリマー化合物を含むことを特徴とする薄膜トランジスタ用ゲート絶縁膜形成剤。
- 前記オリゴマー化合物又はポリマー化合物が、下記式[1]で表される構造単位を含む化合物である、請求項1に記載の薄膜トランジスタ用ゲート絶縁膜形成剤。
- 前記オリゴマー化合物又はポリマー化合物が、下記式[4]で表される化合物と、式[5]及び式[6]で表される化合物から選ばれる少なくとも一方の化合物との反応生成物である、請求項1又は請求項2に記載の薄膜トランジスタ用ゲート絶縁膜形成剤。
- 請求項1乃至請求項3のうちのいずれか一項に記載の薄膜トランジスタ用ゲート絶縁膜形成剤を用いて形成されるゲート絶縁膜。
- 請求項4に記載のゲート絶縁膜を有する薄膜トランジスタ。
- 請求項1乃至請求項3のうちのいずれか一項に記載の薄膜トランジスタ用ゲート絶縁膜形成剤を基板に塗布した後、180℃以下の温度で焼成する工程を含む、薄膜トランジスタ用ゲート絶縁膜の製造方法。
- 請求項1乃至請求項3のうちのいずれか一項に記載の薄膜トランジスタ用ゲート絶縁膜形成剤を基板に塗布した後、180℃以下の温度で焼成し、薄膜トランジスタ用ゲート絶縁膜を得る工程、及び、薄膜トランジスタの半導体層を有機半導体の塗布により形成する工程を含む、薄膜トランジスタの製造方法。
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