WO2010058991A2 - Procédé de fabrication d'un dispositif électroluminescent à base de nitrure, verticalement structuré - Google Patents

Procédé de fabrication d'un dispositif électroluminescent à base de nitrure, verticalement structuré Download PDF

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Publication number
WO2010058991A2
WO2010058991A2 PCT/KR2009/006847 KR2009006847W WO2010058991A2 WO 2010058991 A2 WO2010058991 A2 WO 2010058991A2 KR 2009006847 W KR2009006847 W KR 2009006847W WO 2010058991 A2 WO2010058991 A2 WO 2010058991A2
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WO
WIPO (PCT)
Prior art keywords
nitride
semiconductor layer
substrate
based semiconductor
emitting device
Prior art date
Application number
PCT/KR2009/006847
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English (en)
Korean (ko)
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WO2010058991A3 (fr
Inventor
김극
최유항
조수연
박치권
Original Assignee
우리엘에스티 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from KR1020080116385A external-priority patent/KR101012638B1/ko
Priority claimed from KR1020080116387A external-priority patent/KR20100057372A/ko
Application filed by 우리엘에스티 주식회사 filed Critical 우리엘에스티 주식회사
Publication of WO2010058991A2 publication Critical patent/WO2010058991A2/fr
Publication of WO2010058991A3 publication Critical patent/WO2010058991A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

Definitions

  • the present disclosure relates to a method of manufacturing a vertical nitride based light emitting device as a whole, and more particularly, to a vertical nitride based light emitting device capable of minimizing structural defects of a nitride based semiconductor layer when a substrate and a nitride based semiconductor layer are separated. It relates to a manufacturing method.
  • the nitride-based light emitting device includes a compound semiconductor layer made of Al (x) Ga (y) In (1-xy) N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1). It means a light emitting device such as a light emitting diode including.
  • FIG. 1 is a view showing an example of a method of manufacturing a conventional vertical nitride-based semiconductor layer, (a) is a stack of a nitride-based semiconductor layer on the substrate 101, a photolithography process and dry inductively coupled plasma (Dry The trench 103 is formed in the nitride semiconductor layer 102 through an Inductive Coupled Plasma process, and (b) irradiates a laser at an interface between the substrate 101 and the nitride semiconductor layer 102. It shows the process of separation.
  • FIG. 2 is a view showing another example of a conventional method for manufacturing a vertical nitride semiconductor layer, (a) after forming the nitride semiconductor layer 202 and the p-electrode 203 on the substrate 201, A trench 205 in which the photomask 204 is formed through a photolithography process and is used as an etch mask to penetrate through the nitride semiconductor layer 202 and the p-electrode 203 and partially slice the thickness of the substrate 201.
  • (B) is a process of irradiating and separating laser interface at the interface between the nitride-based semiconductor layer 202 and the substrate 201 while filling the trench 205 with the photoresist 206. It is showing.
  • the nitride-based semiconductor layer may be deteriorated by a photolithography process and an etching process for forming a trench, which is a problem that causes cracks in the separation process of the nitride-based semiconductor layer and the substrate. have.
  • a method of preparing a substrate comprising: preparing a substrate; Forming trench lines in the substrate by a laser or diamond cutter; Growing a nitride based semiconductor layer on the substrate; And separating the nitride-based semiconductor layer and the substrate; a method of manufacturing a vertical nitride-based light emitting device is provided.
  • the nitride semiconductor layer is grown to be partitioned by trench lines.
  • preparing a substrate comprising: Growing a nitride based semiconductor layer on the substrate; Forming trench lines in the substrate by a laser or diamond cutter; And separating the nitride-based semiconductor layer and the substrate; a method of manufacturing a vertical nitride-based light emitting device is provided.
  • the trench line is formed through the nitride semiconductor layer.
  • FIG. 1 is a view showing an example of a method of manufacturing a conventional vertical nitride-based semiconductor layer
  • FIG. 2 is a view showing another example of a method of manufacturing a conventional vertical nitride-based semiconductor layer
  • 3 to 8 are views showing an example of the manufacturing process of the vertical nitride-based light emitting device according to the present disclosure
  • FIG. 9 is a photograph showing the experimental results of FIG.
  • FIGS. 10 to 12 are views showing another example of the manufacturing process of the vertical nitride-based light emitting device according to the present disclosure.
  • FIG. 13 is a photograph showing the experimental results of FIG.
  • 3 to 8 illustrate an example of a vertical nitride-based light emitting device manufacturing process according to the present disclosure, preparing a substrate 301, and cutting a laser or diamond on the substrate 301.
  • Forming a trench line 302 by forming a trench line 302, growing a nitride semiconductor layer 310 on the substrate 301, and applying a laser to an interface between the nitride semiconductor layer 310 and the substrate 301. Irradiating to remove the substrate 301 (laser lift off; hereinafter referred to as an 'LLO process').
  • the method may further include forming electrodes 303 and 304 on the nitride based semiconductor layer 310 and attaching the conductive substrate 305 to the electrodes 303 and 304.
  • the substrate 301 serves to provide a growth space for the nitride based semiconductor layer 310, and a sapphire (Al 2 O 3 ) substrate will be mainly used, but the electrical insulating property is not doped with impurities for electrical conductivity. Silicon (Si) substrates, GaAs substrates, MgO substrates and the like may also be used.
  • a substrate in which any one of GaN, InGaN, AlGaN, and AlInGaN are stacked on any one of a sapphire (Al 2 O 3 ) substrate, a silicon (Si) substrate, a GaAs substrate, and an MgO substrate may be used.
  • the substrate 301 is provided to the growth space of the nitride based semiconductor layer 310 and then removed by the LLO process, it is also referred to as a sacrified substrate.
  • the trench line 302 is formed in the substrate 301 in a predetermined width and depth, and is formed by laser irradiation or a diamond cutter.
  • the nitride-based semiconductor layer 310 grown on the substrate 301 is grown only in the region defined by the trench line 302, and one vertical nitride is formed in the region defined by the trench line 302.
  • the light emitting device (hereinafter referred to as a "unit light emitting device”) corresponds.
  • the trench line 302 may be maintained between the neighboring nitride based semiconductor layers 310.
  • the photolithography process and the etching process for forming the trench line 302 between the neighboring nitride-based semiconductor layer 310 can be eliminated, deterioration of the nitride-based semiconductor layer generated during the photolithography process and etching process Can be prevented, and the problem of cracking during the LLO process can be prevented due to deterioration of the nitride based semiconductor layer.
  • FIG. 9 is a photograph showing the results of the experiment of FIG. 4, in which a trench line 302 is formed on a substrate 301, and a nitride-based semiconductor layer 310 is grown on the substrate 301 except for the trench line 302. It can be seen that the trench line 302 is maintained between neighboring nitride-based semiconductor layers 310.
  • the trench lines 302 are formed to have a depth of 5 to 30 ⁇ m and a width of 2 to 7 ⁇ m to maintain the trench lines 302 between neighboring nitride based semiconductor layers 310. It is preferable.
  • the nitride based semiconductor layer 310 grown on the substrate 301 on which the trench lines 302 are formed has a lateral direction along with growth of maintaining the trench lines 302 between the unit light emitting devices and the unit light emitting devices.
  • the width and depth of the trench line 302 may be determined in consideration of the lateral growth thickness.
  • the role of the gas flow passage of the trench line 302 may be considered together.
  • the nitride-based semiconductor layer 310 is composed of GaN
  • some GaN is decomposed into gallium (Ga) and nitrogen gas (N 2 ) during the LLO process
  • the generated nitrogen gas (N 2 ) is a high pressure Since it may act as a factor inducing cracking of the nitride based semiconductor layer 310, the width and depth of the trench line 302 may be determined in consideration of effective emission of nitrogen gas.
  • a cleaning process may be performed on the substrate 301 to remove by-products generated by laser irradiation or diamond cutting.
  • the nitride semiconductor layer 310 is grown on the substrate 301 on which the trench lines 302 are formed, and the n-type semiconductor layer 311, the active layer 312, and the p-type semiconductor layer 313 may be sequentially grown. have.
  • the nitride based semiconductor layer 310 may be formed through a metal organic chemical vapor deposition (MOCVD) or a molecular beam epitaxy (MBE).
  • MOCVD metal organic chemical vapor deposition
  • MBE molecular beam epitaxy
  • a buffer layer may be further provided before the n-type semiconductor layer 311 is grown, and an electron blocking layer may be further provided on the p-type semiconductor layer 313.
  • the transparent electrode 303 and the p-electrode 304 may be sequentially provided on the p-type semiconductor layer 313.
  • the reflective electrode may be provided instead of the transparent electrode 303.
  • a conductive substrate 305 is attached on the p-electrode 304.
  • the conductive substrate 305 may be any one of a silicon (Si) substrate, a germanium (Ge) substrate, and a GaAs substrate doped with impurities for electrical conductivity.
  • the LLO process proceeds.
  • the substrate 301 is separated from the nitride based semiconductor layer 310 by irradiating a laser on the interface between the nitride based semiconductor layer 310 and the substrate 301.
  • the n-electrode 306 is formed on the n-type semiconductor layer 311, and the conductive substrate 305 is cut along the trench line 302 to manufacture a plurality of unit light emitting devices. Is completed.
  • FIGS. 10 to 12 are views showing another example of a vertical nitride-based light emitting device manufacturing process according to the present disclosure, preparing a substrate 401, growing a nitride-based semiconductor layer 410 on the substrate 401
  • the method includes forming a trench line 402 in the substrate 401 by a laser or diamond cutter, and separating the nitride based semiconductor layer 410 and the substrate 401 by an LLO process.
  • the method may further include forming electrodes 403 and 404 on the nitride based semiconductor layer 410 and attaching the conductive substrate 401 to the electrodes 403 and 404.
  • the trench line 402 is formed on the substrate 401 by a laser or diamond cutter after the nitride-based semiconductor layer 410 is grown. Since the excluded configuration is substantially the same as the example described above, a detailed description of the configuration except for the formation of the trench line 402 will be replaced with the foregoing description.
  • the trench line 402 is formed by vertically penetrating the grown nitride-based semiconductor layer 410 by laser irradiation or a diamond cutter, and the substrate 401 is excavated by a predetermined width and depth. Is formed.
  • the nitride based semiconductor layer may be generated by the photolithography process and the etching process. Deterioration of the 410 may be prevented and cracks that may occur during the LLO process may be prevented due to the deterioration of the nitride based semiconductor layer 410.
  • the trench line 402 when the trench line 402 is formed by laser irradiation, deterioration may occur in the nitride based semiconductor layer 410, but in the deteriorated range, the trench line 402 may be considerably smaller than the photolithography process and the etching process. The deteriorated portion can be simply removed by wet etching. Furthermore, in the case of the diamond cutter, the possibility of the nitride-based semiconductor layer 410 deteriorating is very low.
  • the trench line 402 when the trench line 402 is formed by a photolithography process and an etching process, a process time of several hours is required. However, when the trench line 402 is formed by a laser irradiation or a diamond cutter as in this example, several minutes are required. Since the trench line 402 can be formed within a range, the yield can be improved.
  • the trench line 402 may effectively discharge nitrogen gas that may be generated during the LLO process.
  • FIG. 13 is a photograph showing the results of the experiment of FIG. 11 and illustrates trench lines 402 formed on the substrate 401 and the nitride based semiconductor layer 410 by laser irradiation or a diamond cutter.
  • a method of manufacturing a vertical nitride light emitting device characterized in that the nitride semiconductor layer is grown so that trench lines are maintained.
  • a trench line defines a region of a unit light emitting device, wherein the vertical nitride light emitting device is manufactured.
  • a trench line is formed in a depth of 5 to 30 mu m and a width of 2 to 7 mu m.
  • a trench line can be formed through laser irradiation or a diamond cutting machine without applying a photo process and an etching process, separation of the substrate and the nitride semiconductor layer The structural defects of the nitride nitride semiconductor layer can be minimized.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)

Abstract

La présente invention concerne un procédé de fabrication d'un dispositif électroluminescent à base de nitrure, verticalement structuré, comprenant les étapes suivantes: préparation d'un substrat; formation d'une tranchée sur le substrat à l'aide d'un procédé de découpe par laser ou au diamant; culture d'une couche semi-conductrice à base de nitrure sur le substrat; et séparation de ladite couche semi-conductrice à base de nitrure à partir du substrat.
PCT/KR2009/006847 2008-11-21 2009-11-20 Procédé de fabrication d'un dispositif électroluminescent à base de nitrure, verticalement structuré WO2010058991A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020080116385A KR101012638B1 (ko) 2008-11-21 2008-11-21 수직형 질화물계 발광소자의 제조방법
KR1020080116387A KR20100057372A (ko) 2008-11-21 2008-11-21 수직형 질화물계 발광소자의 제조방법
KR10-2008-0116387 2008-11-21
KR10-2008-0116385 2008-11-21

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WO2010058991A2 true WO2010058991A2 (fr) 2010-05-27
WO2010058991A3 WO2010058991A3 (fr) 2010-08-19

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040245543A1 (en) * 2003-06-04 2004-12-09 Yoo Myung Cheol Method of fabricating vertical structure compound semiconductor devices
KR20060080827A (ko) * 2005-01-06 2006-07-11 엘지전자 주식회사 발광 소자의 에피층에서 사파이어 기판을 이탈시키는 방법
JP2008103698A (ja) * 2006-09-20 2008-05-01 Tohoku Univ 半導体デバイスの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040245543A1 (en) * 2003-06-04 2004-12-09 Yoo Myung Cheol Method of fabricating vertical structure compound semiconductor devices
KR20060080827A (ko) * 2005-01-06 2006-07-11 엘지전자 주식회사 발광 소자의 에피층에서 사파이어 기판을 이탈시키는 방법
JP2008103698A (ja) * 2006-09-20 2008-05-01 Tohoku Univ 半導体デバイスの製造方法

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