WO2010057955A2 - Kantenemittierender halbleiterlaser - Google Patents

Kantenemittierender halbleiterlaser Download PDF

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Publication number
WO2010057955A2
WO2010057955A2 PCT/EP2009/065488 EP2009065488W WO2010057955A2 WO 2010057955 A2 WO2010057955 A2 WO 2010057955A2 EP 2009065488 W EP2009065488 W EP 2009065488W WO 2010057955 A2 WO2010057955 A2 WO 2010057955A2
Authority
WO
WIPO (PCT)
Prior art keywords
edge
region
semiconductor laser
trench
waveguide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2009/065488
Other languages
German (de)
English (en)
French (fr)
Other versions
WO2010057955A3 (de
Inventor
Hans-Christoph Eckstein
Uwe D. Zeitner
Wolfgang Schmid
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Original Assignee
Osram Opto Semiconductors GmbH
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH, Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV filed Critical Osram Opto Semiconductors GmbH
Priority to JP2011536869A priority Critical patent/JP5529151B2/ja
Priority to US13/130,444 priority patent/US8363688B2/en
Priority to EP09752854A priority patent/EP2347479A2/de
Publication of WO2010057955A2 publication Critical patent/WO2010057955A2/de
Publication of WO2010057955A3 publication Critical patent/WO2010057955A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0655—Single transverse or lateral mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1203—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers over only a part of the length of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1237—Lateral grating, i.e. grating only adjacent ridge or mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers

Definitions

  • the invention has for its object to provide an improved edge-emitting semiconductor laser, which is characterized by a high beam quality, in particular an operation in the lateral fundamental mode. This object is achieved by an edge-emitting semiconductor laser according to the patent claim 1.
  • Advantageous embodiments and modifications of the invention are the subject of the dependent claims.
  • a local variation of the shape of the side flanks 16 of the trench 7 can be carried out by structuring a variable-dose photoresist by multi-stage exposure by means of electron beam or laser lithography or with gray-scale masks.
  • the section along the line MN shown in FIG. 5B illustrates that the trench 7 has a rectangular cross-sectional profile in the outer region of the upper jacket layer 3b.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
PCT/EP2009/065488 2008-11-21 2009-11-19 Kantenemittierender halbleiterlaser Ceased WO2010057955A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011536869A JP5529151B2 (ja) 2008-11-21 2009-11-19 端面発光型半導体レーザ
US13/130,444 US8363688B2 (en) 2008-11-21 2009-11-19 Edge emitting semiconductor laser
EP09752854A EP2347479A2 (de) 2008-11-21 2009-11-19 Kantenemittierender halbleiterlaser

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008058435.5 2008-11-21
DE102008058435A DE102008058435B4 (de) 2008-11-21 2008-11-21 Kantenemittierender Halbleiterlaser

Publications (2)

Publication Number Publication Date
WO2010057955A2 true WO2010057955A2 (de) 2010-05-27
WO2010057955A3 WO2010057955A3 (de) 2010-07-22

Family

ID=42112221

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2009/065488 Ceased WO2010057955A2 (de) 2008-11-21 2009-11-19 Kantenemittierender halbleiterlaser

Country Status (5)

Country Link
US (1) US8363688B2 (enExample)
EP (1) EP2347479A2 (enExample)
JP (1) JP5529151B2 (enExample)
DE (1) DE102008058435B4 (enExample)
WO (1) WO2010057955A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2523279A2 (de) 2011-05-09 2012-11-14 Forschungsverbund Berlin e.V. Breitstreifen-Diodenlaser mit hoher Effizienz und geringer Fernfelddivergenz
CN106099640A (zh) * 2011-05-02 2016-11-09 奥斯兰姆奥普托半导体有限责任公司 激光光源

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009056387B9 (de) * 2009-10-30 2020-05-07 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit einem Phasenstrukturbereich zur Selektion lateraler Lasermoden
DE102012103549B4 (de) * 2012-04-23 2020-06-18 Osram Opto Semiconductors Gmbh Halbleiterlaserlichtquelle mit einem kantenemittierenden Halbleiterkörper und Licht streuenden Teilbereich
DE102012110613A1 (de) * 2012-11-06 2014-05-08 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
US11837838B1 (en) * 2020-01-31 2023-12-05 Freedom Photonics Llc Laser having tapered region
CN113690731A (zh) * 2020-05-19 2021-11-23 通快两合公司 具有微结构的半导体盘形激光器
CN113675723B (zh) * 2021-08-23 2023-07-28 中国科学院半导体研究所 连续激射的微腔量子级联激光器及制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5029283A (enExample) * 1973-07-19 1975-03-25
US5247536A (en) * 1990-07-25 1993-09-21 Kabushiki Kaisha Toshiba Semiconductor laser distributed feedback laser including mode interrupt means
US6122299A (en) * 1997-12-31 2000-09-19 Sdl, Inc. Angled distributed reflector optical device with enhanced light confinement
US6810054B2 (en) * 2000-03-31 2004-10-26 Presstek, Inc. Mode-limiting diode laser structure
JP4785327B2 (ja) 2000-06-15 2011-10-05 フラウンホッファー−ゲゼルシャフト ツァー フェーデルング デア アンゲバンテン フォルシュング エー ファー 半導体レーザー用レーザー共振器及びレーザー共振器を製造する方法
US20030219053A1 (en) * 2002-05-21 2003-11-27 The Board Of Trustees Of The University Of Illinois Index guided laser structure
JP3857225B2 (ja) * 2002-12-19 2006-12-13 富士通株式会社 半導体レーザ及びその製造方法
US7139300B2 (en) * 2003-08-19 2006-11-21 Coherent, Inc. Wide-stripe single-mode diode-laser
JP2005327783A (ja) * 2004-05-12 2005-11-24 Sony Corp 半導体レーザ
JP4721924B2 (ja) * 2005-12-09 2011-07-13 富士通株式会社 光導波路を伝搬する光と回折格子とを結合させた光素子
JP2007234724A (ja) * 2006-02-28 2007-09-13 Canon Inc 垂直共振器型面発光レーザ、該垂直共振器型面発光レーザにおける二次元フォトニック結晶の製造方法
DE102008025922B4 (de) 2008-05-30 2020-02-06 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit Phasenstruktur

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106099640A (zh) * 2011-05-02 2016-11-09 奥斯兰姆奥普托半导体有限责任公司 激光光源
EP2523279A2 (de) 2011-05-09 2012-11-14 Forschungsverbund Berlin e.V. Breitstreifen-Diodenlaser mit hoher Effizienz und geringer Fernfelddivergenz
DE102011075502A1 (de) 2011-05-09 2012-11-15 Forschungsverbund Berlin E.V. Breitstreifen-Diodenlaser mit hoher Effizienz und geringer Fernfelddivergenz
US8537869B2 (en) 2011-05-09 2013-09-17 Forschungsverbund Berlin E.V. Broad area diode laser with high efficiency and small far-field divergence

Also Published As

Publication number Publication date
US8363688B2 (en) 2013-01-29
WO2010057955A3 (de) 2010-07-22
JP2012509583A (ja) 2012-04-19
JP5529151B2 (ja) 2014-06-25
EP2347479A2 (de) 2011-07-27
DE102008058435A1 (de) 2010-06-02
US20110317732A1 (en) 2011-12-29
DE102008058435B4 (de) 2011-08-25

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