WO2010053338A3 - 금속 산화물 반도체 나노 입자 형성 방법, 이 나노 입자를 사용한 고분자 발 광 소자 및 그 제조 방법 - Google Patents

금속 산화물 반도체 나노 입자 형성 방법, 이 나노 입자를 사용한 고분자 발 광 소자 및 그 제조 방법 Download PDF

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Publication number
WO2010053338A3
WO2010053338A3 PCT/KR2009/006591 KR2009006591W WO2010053338A3 WO 2010053338 A3 WO2010053338 A3 WO 2010053338A3 KR 2009006591 W KR2009006591 W KR 2009006591W WO 2010053338 A3 WO2010053338 A3 WO 2010053338A3
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WO
WIPO (PCT)
Prior art keywords
nanoparticles
metal oxide
light
polymer
formation
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Application number
PCT/KR2009/006591
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English (en)
French (fr)
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WO2010053338A2 (ko
Inventor
김태환
손동익
유찬호
정재훈
추동철
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한양대학교 산학협력단
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Application filed by 한양대학교 산학협력단 filed Critical 한양대학교 산학협력단
Publication of WO2010053338A2 publication Critical patent/WO2010053338A2/ko
Publication of WO2010053338A3 publication Critical patent/WO2010053338A3/ko

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/20—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H10K85/146—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE poly N-vinylcarbazol; Derivatives thereof

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

금속 산화물 반도체 나노 입자 형성 방법, 이 나노 입자를 사용한 고분자 발 광 소자 및 그 제조 방법을 제공한다. 본 발명에 따른 나노 입자 형성 방법에서는 원료 금속염을 용매에 용해시켜 혼합용액을 제조한 다음, 상기 혼합용액을 가열한 후 냉각시키는 과정에서 상기 혼합용액 내에 금속 산화물 나노 입자를 형성한다. 본 발명에 따른 고분자 발광 소자는, 기판, 상기 기판 상에 형성된 제1 전극, 상기 제1 전극 상에 형성되고 전도성 고분자와 절연성 고분자의 혼합 단층 고분자 박막 내의 금속 산화물 나노 입자로 구성된 발광층, 및 상기 발광층 상에 형성된 제2 전 극을 포함한다.
PCT/KR2009/006591 2008-11-10 2009-11-10 금속 산화물 반도체 나노 입자 형성 방법, 이 나노 입자를 사용한 고분자 발 광 소자 및 그 제조 방법 WO2010053338A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080110771A KR101139927B1 (ko) 2008-11-10 2008-11-10 금속 산화물 반도체 나노 입자 형성 방법, 이 나노 입자를 사용한 고분자 발광 소자 및 그 제조 방법
KR10-2008-0110771 2008-11-10

Publications (2)

Publication Number Publication Date
WO2010053338A2 WO2010053338A2 (ko) 2010-05-14
WO2010053338A3 true WO2010053338A3 (ko) 2010-08-05

Family

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PCT/KR2009/006591 WO2010053338A2 (ko) 2008-11-10 2009-11-10 금속 산화물 반도체 나노 입자 형성 방법, 이 나노 입자를 사용한 고분자 발 광 소자 및 그 제조 방법

Country Status (2)

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KR (1) KR101139927B1 (ko)
WO (1) WO2010053338A2 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101619438B1 (ko) 2013-06-14 2016-05-10 주식회사 엘지화학 금속 나노플레이트, 이의 제조 방법, 이를 포함하는 도전성 잉크 조성물 및 전도성 필름
EP3923358B1 (en) * 2019-04-03 2024-05-29 Osong Medical Innovation Foundation Method for manufacturing conductive polymer electrode by using drop casting

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040011527A (ko) * 2002-05-10 2004-02-05 베.체. 헤레우스 게엠베하 운트 코. 카게 금속산화물 분말 또는 반도체 산화물 분말의 제조 방법,산화물 분말, 고체 및 이것의 적용
KR20070089045A (ko) * 2004-05-19 2007-08-30 더 텍사스 에이 & 엠 유니버시티 시스템 나노크기 금속 산화물 입자의 제조방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100710458B1 (ko) 2005-11-11 2007-04-24 한양대학교 산학협력단 고분자 박막 내에 형성된 나노 입자를 이용한 전계 발광소자 제작 방법 및 그 방법에 의해 제작된 전계 발광소자와 그 구동 방법
KR100928305B1 (ko) * 2007-12-06 2009-11-25 한양대학교 산학협력단 금속 산화물 나노 입자의 형성 방법 및 금속 산화물 나노입자가 분포된 발광층을 포함하는 발광 소자 및 그 발광소자 제작 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040011527A (ko) * 2002-05-10 2004-02-05 베.체. 헤레우스 게엠베하 운트 코. 카게 금속산화물 분말 또는 반도체 산화물 분말의 제조 방법,산화물 분말, 고체 및 이것의 적용
KR20070089045A (ko) * 2004-05-19 2007-08-30 더 텍사스 에이 & 엠 유니버시티 시스템 나노크기 금속 산화물 입자의 제조방법

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RODRIGUEZ-GATTORNO, GEONEL ET AL.: "Novel Synthesis Pathway ofZnO Nanopartic les from the Spontaneous Hydrolysis of Zinc Carboxylate Salts", J. PHYS .CEMEM, B, vol. 107, 2003, pages 12597 - 12604 *

Also Published As

Publication number Publication date
KR20100051946A (ko) 2010-05-19
WO2010053338A2 (ko) 2010-05-14
KR101139927B1 (ko) 2012-04-30

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