WO2010050716A2 - 가스 스크러빙 장치 및 가스 스크러빙 방법 - Google Patents
가스 스크러빙 장치 및 가스 스크러빙 방법 Download PDFInfo
- Publication number
- WO2010050716A2 WO2010050716A2 PCT/KR2009/006208 KR2009006208W WO2010050716A2 WO 2010050716 A2 WO2010050716 A2 WO 2010050716A2 KR 2009006208 W KR2009006208 W KR 2009006208W WO 2010050716 A2 WO2010050716 A2 WO 2010050716A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- gas
- water
- plasma
- reactor
- reaction
- Prior art date
Links
- 238000005201 scrubbing Methods 0.000 title claims abstract description 42
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 90
- 238000006243 chemical reaction Methods 0.000 claims abstract description 45
- 239000007789 gas Substances 0.000 claims description 61
- 239000012495 reaction gas Substances 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 22
- 230000008016 vaporization Effects 0.000 claims description 8
- 238000001802 infusion Methods 0.000 claims 1
- 238000002347 injection Methods 0.000 abstract description 10
- 239000007924 injection Substances 0.000 abstract description 10
- 239000000376 reactant Substances 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000002912 waste gas Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229920006926 PFC Polymers 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- 238000003915 air pollution Methods 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 238000005200 wet scrubbing Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/46—Removing components of defined structure
- B01D53/68—Halogens or halogen compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/14—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by absorption
- B01D53/1431—Pretreatment by other processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2257/00—Components to be removed
- B01D2257/20—Halogens or halogen compounds
- B01D2257/204—Inorganic halogen compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2257/00—Components to be removed
- B01D2257/20—Halogens or halogen compounds
- B01D2257/206—Organic halogen compounds
- B01D2257/2066—Fluorine
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2258/00—Sources of waste gases
- B01D2258/02—Other waste gases
- B01D2258/0216—Other waste gases from CVD treatment or semi-conductor manufacturing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2259/00—Type of treatment
- B01D2259/80—Employing electric, magnetic, electromagnetic or wave energy, or particle radiation
- B01D2259/818—Employing electrical discharges or the generation of a plasma
Definitions
- the present invention relates to a gas scrubbing device and a gas scrubbing method, and more particularly, it is possible to implement an economical gas scrubbing method, and the efficiency of gas scrubbing because it directly vaporizes water in an optimal region where the plasma gasified reaction gas is discharged.
- This improved gas scrubbing device and gas scrubbing method is a gas scrubbing device and gas scrubbing method.
- waste gases such as fluorine-based gas and VOC, such as NF 3 and CF 4 are generated and discharged. If such waste gas is discharged into the atmosphere without being purified below a predetermined concentration, it causes serious air and environmental pollution. Thus, waste gas is currently cleaned using a gas scrubber method.
- Gas scrubber according to the prior art is a wet scrubber (wet type gas scrubber) by dissolving the water-soluble gases in various harmful gases in water, a burning type gas scrubber (burning type gas scrubber) by burning the combustible gas, the heater Directly oxidizing the waste gas and spraying the oxidizing gas by using a sprayer to separate the powder contained in the oxidizing gas, and an adsorption / catalyst method of removing harmful gas by an adsorbent using van der Waals attraction.
- a wet scrubber is used more generally because it is excellent in effect compared with other methods, and also excellent in process economics.
- FIG. 1 is a schematic view showing a wet type gas scrubber used in a conventional gas cleaning apparatus for a semiconductor process.
- the gas scrubber 1 is composed of a wet chamber 10 at the top and a water circulation tank 20 at the bottom.
- the wet chamber 10 is provided with a gas inlet 11 at an upper portion thereof, and a gas outlet 12 is provided at one side thereof.
- a partition 13 for separating a part of the interior of the wet chamber 10 is provided in the axial direction.
- the lower end of the partition 13 is provided with an absorbent 16 for filtering water-soluble gas by reacting with water, and the absorber 16 is provided with a water supply pipe 14 having a nozzle 15 for spraying water. It is penetrated from one side of (10).
- the water circulation tank 20 is provided with a water discharge port 22 which is supplied to the wet chamber 10 in the circulating and discharged to one side.
- the gas scrubber 1 having the above structure sprays water into the middle portion of the wet chamber 10 and delays the flow of the gas while passing through the absorbent 16 to increase efficiency, and reacts the water-soluble gas with water.
- a wet type has a problem in that water consumption is large by using a large amount of water, and the water flows in a state in which the molecular size of water is large, so that the reaction does not occur well and the maintenance is frequently performed due to frequent clogging of the nozzle.
- Korean Patent No. 10-0501533 (hereinafter referred to as “Technology”) makes it easier to reduce water molecules and gases by changing them to vaporize water.
- a gas scrubber is disclosed in which the amount of water used is reduced as a result of the reaction.
- a separate heater or ultrasonic apparatus is required, economical efficiency is lowered, and the size of the apparatus is unnecessarily large.
- the first object of the present invention is to provide a gas scrubbing device which is more economical and capable of an effective device configuration.
- the second object of the present invention is to provide an effective gas scrubbing method using the gas scrubbing device.
- the present invention as a first configuration for solving the first problem is a reaction tube into which the reaction gas flows; A reactor connected to the reaction tube and converting the introduced reaction gas into a plasma; And a water injecting unit for injecting water into the plasma in the reactor.
- the water injection unit may be in the form of a dropper dropping the water in the form of a drop at a constant speed, it may be provided at a distance separated by 10 to 20cm from the reaction tube.
- the water injection rate may be 2 to 10 ml per minute.
- the present invention as a second configuration for solving the first problem is the reaction tube is introduced reaction gas; A reactor connected to the reaction tube and converting the introduced reaction gas into a plasma; And a nozzle for directly injecting water into the reactor by an external pressure, wherein the water injected into the reactor through the nozzle is vaporized by a plasma heat source to perform a plasma reaction with the reaction gas.
- the nozzle may be provided at a distance spaced by 10 to 20cm from the reaction tube.
- the present invention is the reaction tube is introduced into the reaction gas in a third configuration for solving the first problem;
- a reactor connected to the reaction tube and converting the introduced reaction gas into a plasma;
- a piping line in contact with the reactor and filled with water;
- a nozzle for injecting water from the pipe line vaporized by the reactor heat into the reactor, wherein the nozzle is provided at a distance spaced from the reaction tube by 10 to 20 cm.
- the piping line may also be located in the wall of the reactor, whereby the reactor may form a double wall.
- the present invention comprises the steps of introducing a reaction gas; Plasmalizing the reaction gas; And vaporizing water using a heat source by the reaction gas plasma to introduce the plasma gas into the plasma reaction gas, thereby performing a plasma reaction.
- the water may be vaporized at a point separated by 10 to 20cm from the start point of the reaction gas plasma flame to achieve the maximum reaction effect.
- the gas scrubbing device enables very economical gas scrubbing because it vaporizes water using a heat source of plasma without using a separate heater. Furthermore, since scrubbing the reaction gas by directly vaporizing water in an optimal region where the plasma-formed reaction gas is discharged, the efficiency of gas scrubbing is also improved.
- FIG. 1 is a schematic view illustrating a wet type gas scrubbing apparatus used in a conventional gas cleaning apparatus for a semiconductor process.
- FIG. 2 is a schematic diagram of a gas scrubbing apparatus according to an embodiment of the present invention.
- FIG. 3 is a schematic diagram showing a water injection configuration according to the present invention.
- FIG. 4 is a schematic diagram of a gas scrubbing apparatus according to another embodiment of the present invention.
- FIG. 5 is a schematic diagram of a gas scrubbing apparatus according to another embodiment of the present invention.
- the present invention induces decomposition of the reaction gas through the plasma and vaporization of water using the heat source of the plasma.
- the vaporized water immediately reacts with the plasmalized reaction gas, so that very fast and rapid reaction gas removal can be achieved.
- reaction gas used throughout the present specification refers to a gas that is decomposed and removed by plasma, and includes all of PFC, VOC, and the like discharged from a semiconductor process.
- the scope of the present invention is not limited only to the semiconductor process itself, and any gas which can be scrubbed by plasma after being decomposed by plasma belongs to the reaction gas of the present specification.
- radicals of various species are formed especially when PFCs generated in a semiconductor process are decomposed by plasma, and the radicals may be easily reacted with water to be removed.
- the prior art required an apparatus for converting water into a vapor state by using a separate heater, but the present invention, since the water is vaporized immediately upon injection of the reactor by the high heat generated by the plasma, The same device becomes unnecessary.
- the steam is generated in a separate device and then injected into the waste gas, but the present invention generates steam in the reactor itself in which the activated reactant gas is discharged and reacts with the reactant gas. Problems such as surface condensation due to temperature drop during migration can be essentially prevented.
- the prior art required a device such as a separate heating coil to prevent such surface condensation, but the present invention is very economical, since the use of such a device can be essentially avoided.
- the term "reactor" refers to a place where a physical and chemical reaction in which a reaction gas is plasmalized and vaporized water and a reaction gas activated by plasma are performed is performed.
- the reactor form is a conduit or a vessel. It may be in the form.
- the present invention is not limited to the reactor type as long as water is vaporized by a plasma heat source in the reactor, and the vaporized water reacts with and reacts with a reaction gas activated by the plasma.
- FIG. 2 is a schematic diagram of a gas scrubbing apparatus according to an embodiment of the present invention.
- a reaction gas which is not to be released into the atmosphere, that is, a scrubbing target flows into the reaction tube 110.
- the torch reaction for the reaction gas plasma is carried out in the reaction tube 110
- the shape of the reaction tube is not particularly limited according to the present invention, any structure that can ignition the reaction gas (ignition) Also belongs to the scope of the present invention.
- the plasma process is performed by the microwave plasma method, but as long as it can achieve a level of temperature capable of vaporizing the reaction gas and vaporizing the injected water. All types of plasma methods also belong to the scope of the present invention.
- the reactor 130 is in the form of a tube, as in another embodiment described below, the reactor 130 may be in the form of a vessel rather than a tube.
- the plasma flame 120 is discharged from the reactor by a predetermined length (L), and the reaction gas is converted into active species in the reactor 130 by plasma.
- the gas scrubbing apparatus includes a water injector 140 for injecting water into the reactor 130, wherein the water injector 140 sprays fine water molecules at a predetermined speed or in the form of a nozzle.
- dropper it may be in the form of a dropper (dropper) to drop in a drop form at a specific point.
- dropper when the form together with water injection speed is preferably 2 to 10 ml per minute, and if lower than the injection speed and the scrubbing effect is slight, when it is higher than the injection speed flat Raj do affect the process discharges are extinguished or H2O There is a problem that the reaction itself does not occur.
- the inventors have found that the active reaction gas and water vapor react very effectively when water is injected in a specific range in the form of plasma in the reactor 130, preferably 10 to 20 cm from the reaction tube 110, more preferably. It is 18cm.
- the technical meaning of the numerical range will be described in more detail below with reference to the drawings.
- FIG. 3 is a schematic diagram showing a water injection configuration according to the present invention.
- the reaction between the vaporized water and the reaction gas is If it does not occur sufficiently, on the contrary, if water is injected at a distance greater than 20 cm, there is a problem that the water is not sufficiently vaporized. Therefore, when the water injection unit is used in the form of a nozzle, it is preferable to configure the maximum spray amount of the nozzle to fall within the range (for example, the radius of water radiated after installing the nozzle within the range of buying distance is within the range. can do).
- a dropper form it is possible to derive a configuration in which water droplets fall within the above range from the dropper.
- a single nozzle or dropper may be configured to achieve the wet effect in the present invention, a plurality of nozzles or droppers may be used to induce a reaction in a wide area.
- the reactor 330 is in the form of a cylindrical vessel as a whole, and water fills the pipe line 340 in contact with the outer surface of the reactor.
- the plasma 320 in the reactor 330 raises the temperature of the reactor 330.
- the temperature of the water in the line 340 is also increased by the temperature of the reactor 330, and vaporizes.
- the pressure in the pipe line 340 will gradually increase by the vaporized water, in which case the vaporized water is discharged through the nozzle 350 and moved into the reactor.
- the pipe line may be provided outside the reactor, but may be located inside the reactor wall, in which case the reactor has a double wall structure.
- FIG. 5 shows a gas scrubbing apparatus of the present invention having a configuration different from that disclosed in FIG. 4.
- water is directly injected into the reactor by external pressure.
- all the configuration according to the present invention can avoid the use of a separate heater, by inducing instant wet scrubbing in real time, it is possible to achieve an economical and excellent cleaning effect.
- the gas scrubbing apparatus according to the present invention enables very economical gas scrubbing because it vaporizes water using a heat source of plasma without using a separate heater. Furthermore, since scrubbing the reaction gas by directly vaporizing water in an optimal region where the plasma-formed reaction gas is discharged, the efficiency of gas scrubbing is also improved. Therefore, the gas scrubbing apparatus according to the present invention can be effectively used in the semiconductor field in which waste gases such as fluorine-based gas, VOC, etc. are generated.
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- Oil, Petroleum & Natural Gas (AREA)
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Abstract
Description
Claims (11)
- 반응가스가 유입되는 반응관;상기 반응관과 연결되며, 상기 유입된 반응가스를 플라즈마화시키는 반응기; 및상기 반응기 내의 플라즈마에 물을 주입하기 위한 물 주입부를 포함하는 것을 특징으로 하는 가스 스크러빙 장치.
- 제 1항에 있어서,상기 물 주입부는 물을 일정 속도의 방울 형태로 떨어뜨리는 드로퍼 형태인 것을 특징으로 하는 가스 스크러빙 장치.
- 제 1항에 있어서,상기 물 주입부는 상기 반응관으로부터 10 내지 20cm만큼 이격된 거리에 구비되는 것을 특징으로 하는 가스 스크러빙 장치.
- 제 1항에 있어서,상기 물 주입 속도는 분당 2 내지 10 ml인 것을 특징으로 하는 가스 스크러빙 장치.
- 반응가스가 유입되는 반응관;상기 반응관과 연결되며, 상기 유입된 반응가스를 플라즈마화시키는 반응기; 및상기 반응기 내로 물을 외부 압력에 의하여 직접 주입하기 위한 노즐을 포함하며, 상기 노즐을 통하여 반응기 내에 주입된 물을 플라즈마 열원에 의하여 기화시켜 상기 반응가스와 플라즈마 반응을 시키는 것을 특징으로 하는 가스 스크러빙 장치.
- 제 5항에 있어서,상기 노즐은 상기 반응관으로부터 10 내지 20cm만큼 이격된 거리에 구비되는 것을 특징으로 하는 가스 스크러빙 장치.
- 반응가스가 유입되는 반응관;상기 반응관과 연결되며, 상기 유입된 반응가스를 플라즈마화시키는 반응기; 상기 반응기와 접하며 내부에 물이 채워지는 배관 라인; 및상기 반응기 열에 의하여 기화된 상기 배관 라인의 물이 상기 반응기 내로 주입하기 위한 노즐을 포함하는 것을 특징으로 하는 가스 스크러빙 장치.
- 제 7항에 있어서,상기 배관라인은 상기 반응기의 벽 내에 위치하며, 이로써 상기 반응기는 이중벽을 형성하는 것을 특징으로 하는 가스 스크러빙 장치.
- 제 7항에 있어서,상기 노즐은 상기 반응관으로부터 10 내지 20cm만큼 이격된 거리에 구비되는 것을 특징으로 하는 가스 스크러빙 장치.
- 반응 가스를 유입시키는 단계;상기 반응 가스를 플라즈마화시키는 단계; 및상기 반응가스 플라즈마에 의한 열원을 이용하여 물을 증기화 시켜 플라즈마화된 반응 가스에 유입시켜 플라즈마 반응을 시키는 단계를 포함하는 것을 특징으로 하는 가스 스크러빙 방법.
- 제 10항에 있어서,상기 물은 상기 반응가스 플라즈마 화염의 시작지점으로부터 10 내지 20cm 만큼 이격된 지점에서 증기화되는 것을 특징으로 하는 가스 스크러빙 방법.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/126,385 US20110206582A1 (en) | 2008-10-27 | 2009-10-27 | Gas scrubbing apparatus and gas scrubbing method |
JP2011533111A JP5297533B2 (ja) | 2008-10-27 | 2009-10-27 | ガス洗浄装置及びガス洗浄方法 |
CN2009801425364A CN102217041A (zh) | 2008-10-27 | 2009-10-27 | 气体洗涤装置及气体洗涤方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR10-2008-0105267 | 2008-10-27 | ||
KR1020080105267A KR100987978B1 (ko) | 2008-10-27 | 2008-10-27 | 가스 스크러빙 장치 및 가스 스크러빙 방법 |
Publications (2)
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WO2010050716A2 true WO2010050716A2 (ko) | 2010-05-06 |
WO2010050716A3 WO2010050716A3 (ko) | 2010-07-29 |
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PCT/KR2009/006208 WO2010050716A2 (ko) | 2008-10-27 | 2009-10-27 | 가스 스크러빙 장치 및 가스 스크러빙 방법 |
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US (1) | US20110206582A1 (ko) |
JP (1) | JP5297533B2 (ko) |
KR (1) | KR100987978B1 (ko) |
CN (1) | CN102217041A (ko) |
TW (1) | TWI448323B (ko) |
WO (1) | WO2010050716A2 (ko) |
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DE102012102251B4 (de) * | 2012-03-16 | 2013-11-07 | Das Environmental Expert Gmbh | Verfahren und Vorrichtung zur Behandlung von Schadgasen |
FR3019471B1 (fr) * | 2014-04-04 | 2016-05-06 | Thales Sa | Dispositif de conversion d'un effluent gazeux par plasma multi-source |
KR101589261B1 (ko) | 2015-03-31 | 2016-01-28 | 정재억 | 습식 스크러빙 장치 |
KR101647419B1 (ko) | 2015-04-06 | 2016-08-23 | 주식회사 한국이엔지 | 습식 스크러빙 장치 |
Citations (4)
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KR20030080447A (ko) * | 2002-04-08 | 2003-10-17 | 최경수 | 가스 스크러버 |
JP2007021290A (ja) * | 2005-07-12 | 2007-02-01 | Taiyo Nippon Sanso Corp | 排ガスの処理方法および処理装置 |
KR100821263B1 (ko) * | 2005-12-23 | 2008-04-11 | 영진아이엔디(주) | 수분리 냉각 장치를 구비한 플라즈마 스크러버 시스템 및이를 이용한 유해가스 처리방법 |
KR20080032089A (ko) * | 2005-07-12 | 2008-04-14 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 기체 폐기물의 플라즈마 처리 방법 |
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KR100213812B1 (ko) * | 1997-03-08 | 1999-08-02 | 박운서 | 응축기가 설치된 저온플라즈마 반응기를 이용한 탈황탈질 방법 |
JP2003010638A (ja) * | 2001-06-29 | 2003-01-14 | Kanken Techno Co Ltd | プラズマ排ガス処理方法と該方法を利用した排ガス放電処理塔ならびに前記プラズマ排ガス処理塔を搭載した排ガス処理装置 |
JP2004160312A (ja) * | 2002-11-11 | 2004-06-10 | Masuhiro Kokoma | Pfcガス分解システム及びガス分解方法 |
JP4107959B2 (ja) * | 2002-12-27 | 2008-06-25 | 株式会社アドテック プラズマ テクノロジー | 放電の始動方法、この始動方法を利用した被処理物の処理方法、及びこの始動方法を利用した被処理物の処理装置 |
TWI230094B (en) * | 2003-01-14 | 2005-04-01 | Desiccant Technology Corp | Method for exhaust treatment of perfluoro compounds |
US20050048876A1 (en) * | 2003-09-02 | 2005-03-03 | Applied Materials, Inc. | Fabricating and cleaning chamber components having textured surfaces |
CN2633410Y (zh) * | 2003-09-10 | 2004-08-18 | 华懋科技股份有限公司 | 全氟化物废气等离子处理装置 |
JP2005205330A (ja) * | 2004-01-23 | 2005-08-04 | Kanken Techno Co Ltd | パーフルオロコンパウンド排ガスのプラズマ分解処理方法および該方法を利用したプラズマ分解処理装置並びにこのプラズマ分解処理装置を搭載した排ガス処理システム |
GB0403797D0 (en) * | 2004-02-20 | 2004-03-24 | Boc Group Plc | Gas abatement |
KR100629108B1 (ko) * | 2005-06-10 | 2006-09-27 | 강성희 | 물을 매개체로한 코로나 방전에 의한 오염공기 정화장치 |
JP4588726B2 (ja) * | 2007-02-08 | 2010-12-01 | クリーン・テクノロジー株式会社 | 排ガス処理装置 |
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- 2009-10-27 WO PCT/KR2009/006208 patent/WO2010050716A2/ko active Application Filing
- 2009-10-27 US US13/126,385 patent/US20110206582A1/en not_active Abandoned
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KR20030080447A (ko) * | 2002-04-08 | 2003-10-17 | 최경수 | 가스 스크러버 |
JP2007021290A (ja) * | 2005-07-12 | 2007-02-01 | Taiyo Nippon Sanso Corp | 排ガスの処理方法および処理装置 |
KR20080032089A (ko) * | 2005-07-12 | 2008-04-14 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 기체 폐기물의 플라즈마 처리 방법 |
KR100821263B1 (ko) * | 2005-12-23 | 2008-04-11 | 영진아이엔디(주) | 수분리 냉각 장치를 구비한 플라즈마 스크러버 시스템 및이를 이용한 유해가스 처리방법 |
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JP5297533B2 (ja) | 2013-09-25 |
TWI448323B (zh) | 2014-08-11 |
KR20100046430A (ko) | 2010-05-07 |
TW201029724A (en) | 2010-08-16 |
US20110206582A1 (en) | 2011-08-25 |
KR100987978B1 (ko) | 2010-10-18 |
WO2010050716A3 (ko) | 2010-07-29 |
CN102217041A (zh) | 2011-10-12 |
JP2012506766A (ja) | 2012-03-22 |
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