WO2010040245A1 - 交流发光二极管结构 - Google Patents

交流发光二极管结构 Download PDF

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Publication number
WO2010040245A1
WO2010040245A1 PCT/CN2008/001698 CN2008001698W WO2010040245A1 WO 2010040245 A1 WO2010040245 A1 WO 2010040245A1 CN 2008001698 W CN2008001698 W CN 2008001698W WO 2010040245 A1 WO2010040245 A1 WO 2010040245A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
diode structure
emitting diode
circuit board
wafer holder
Prior art date
Application number
PCT/CN2008/001698
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English (en)
French (fr)
Inventor
陈景宜
陈明鸿
温士逸
Original Assignee
海立尔股份有限公司
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Publication date
Application filed by 海立尔股份有限公司 filed Critical 海立尔股份有限公司
Priority to PCT/CN2008/001698 priority Critical patent/WO2010040245A1/zh
Publication of WO2010040245A1 publication Critical patent/WO2010040245A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape

Definitions

  • the present invention relates to a light emitting diode structure, and more particularly to an AC light emitting diode structure for reducing the number of inner wires in an alternating current light emitting diode, extending the service life, and reducing the light shielding area to enhance the brightness of the light. Background technique
  • a plurality of light-emitting diodes are fabricated in a single wafer by using a semiconductor manufacturing process (process) technology, and a large number of internal wires are used to connect a plurality of light-emitting diodes to form a series connection. Or parallel circuit structure, in order to achieve the purpose of improving the overall light output.
  • process semiconductor manufacturing process
  • the plurality of light emitting units are DC light emitting diodes, and are electrically insulated from each other, and then electrically connected to each other by using the inner wires, and form an anti-parallel circuit structure, thereby forming an alternating current light emitting diode, so that the alternating current power source can be directly used.
  • the light emitting device is driven to emit light.
  • a plurality of light-emitting units are disposed on the insulating substrate, the overall illumination brightness of the light-emitting device can be improved.
  • the use of a large number of internal conductors, resulting in the light-emitting area is shielded to reduce the brightness of the illumination.
  • the design of the inner conductor is relatively complicated, so the cost is increased and the excellent rate is low.
  • the object of the present invention is to overcome the defects of the existing AC light emitting diode structure and provide a new AC light emitting diode structure.
  • the technical problem to be solved is to use an external wire to connect each light emitting diode to replace the inside.
  • the wire is set, and the external wire can withstand high voltage and high current input, which can make the AC LED structure not easy to damage, and is very suitable for practical use.
  • Another object of the present invention is to provide a new AC light emitting diode structure, and the technical problem to be solved is to reduce the light shielding area by using the outer wire, thereby improving the brightness of the illumination, thereby being more suitable for practical use. .
  • a further object of the present invention is to provide a new AC light emitting diode structure, and the technical problem to be solved is that it can reduce the complexity of the design of the LED structure by using the external wires and the circuit board, thereby being more suitable for practical use. .
  • An AC LED structure includes: a susceptor having a wafer holder; a wafer set disposed on the wafer holder, the wafer set having a plurality of light emitting diodes; and at least one The circuit board is disposed on the base, and the light emitting diodes are electrically connected to the circuit board, and at least one alternating current light emitting diode is formed by the circuit board.
  • the object of the present invention and solving the technical problems thereof can be further achieved by the following technical measures.
  • the base material is made of aluminum oxide, quartz, silicon dioxide, calcium zirconate or a glass ceramic.
  • the wafer holder is a thermally conductive base.
  • the base further has a heat conducting portion.
  • the pedestal further has a buried capacitor, and the buried capacitor is used as a delay circuit for electrically connecting to the LEDs.
  • the AC light emitting diodes are connected to each other in series.
  • the AC light emitting diodes are connected to each other in parallel.
  • the AC LED circuits are connected in series and in parallel.
  • the object of the present invention and solving the technical problems thereof are also achieved by the following technical solutions.
  • the invention provides an AC LED structure, comprising: a pedestal having a wafer holder; a wafer set disposed on the wafer holder, the wafer set having a plurality of bi-directional AC light emitting diodes, and The two-way AC light-emitting diodes are electrically connected in a reverse parallel manner by two light-emitting diodes; and at least one circuit board is disposed on the base, and the dual-conducting AC light-emitting diodes are The circuit board is electrically connected, and a serial/parallel circuit structure is formed by the circuit board.
  • the object of the present invention and solving the technical problems thereof can be further achieved by the following technical measures.
  • the base material is made of aluminum oxide, quartz, silicon dioxide, calcium zirconate or a glass ceramic.
  • the wafer holder is further constituted by a heat conducting base.
  • the base further has a heat conducting portion.
  • the base further has a buried capacitor electrically connected to the bidirectional AC light emitting diodes.
  • the AC LED structure of the present invention has at least the following advantages and benefits:
  • the inner conductor and the circuit board capable of supporting high voltage and high current are used instead of the inner conductor, it is possible to avoid the problem that the inner conductor is blown due to exceeding the load.
  • the use of the outer conductor of the present invention allows the life of the alternating current light emitting diode structure to be extended.
  • the outer lead of the present invention can reduce the light-shielding area, so that the illumination brightness can be improved.
  • the present invention uses an external wire to connect each of the LEDs to replace the arrangement of the inner wires, and the external wires can withstand high voltage and high current input, thereby making the AC LED structure less susceptible to damage. The effect.
  • the use of the outer lead wire can reduce the area of the shielded light, thereby improving the illumination brightness.
  • the present invention can reduce the complexity of the design of the LED structure due to the use of the outer leads and the circuit board. The invention has significant advances in technology and has obvious positive effects, and is a novel, progressive and practical new design.
  • FIG. 1A is a perspective view of a preferred embodiment of an alternating current light emitting diode structure of the present invention.
  • FIG. 1B is a top plan view of a preferred embodiment of an alternating current light emitting diode structure in accordance with the present invention.
  • Figure 1C is a cross-sectional view 1 of the preferred embodiment of the present invention taken along line A-A of Figure 1A.
  • Figure 1D is a cross-sectional view 2 of the preferred embodiment of the present invention taken along line A-A of Figure 1A.
  • Fig. 2 is an equivalent circuit diagram of Fig. 1A.
  • FIG. 3A is a top plan view of a preferred embodiment of an alternating current light emitting diode structure of the present invention.
  • Fig. 3B is an equivalent circuit diagram of Fig. 3A.
  • FIG. 4 is a top plan view of a preferred embodiment of an alternating current light emitting diode structure of the present invention.
  • Figure 5 is an equivalent circuit diagram of Figure 4.
  • FIG. 1A is a perspective view of a preferred embodiment of an alternating current light emitting diode structure 10
  • FIG. 1B is a top plan view of a preferred embodiment of an alternating current light emitting diode structure 10 of the present invention
  • FIG. 1C is an AA of the present invention along FIG. 1A.
  • 1 is a cross-sectional view 2 of a preferred embodiment of the present invention taken along line AA of FIG. 1A.
  • Fig. 2 is an equivalent circuit diagram of Fig. 1A.
  • Figure 3A is a top view of a preferred embodiment of an alternating current light emitting diode structure 10 of the present invention
  • Fig. 5 is an equivalent circuit diagram of Fig. 4.
  • FIG. 1A there is shown a perspective view of a preferred embodiment of an alternating current light emitting diode structure (H) of the present invention.
  • An AC LED structure 10 in accordance with a preferred embodiment of the present invention includes a base 20, a chipset 30, and at least one circuit board 40.
  • FIG. 1B it is a top view of a preferred embodiment of an AC LED structure 10 of the present invention.
  • the susceptor 20 may be formed by stacking a plurality of ceramic layers, and the susceptor 20 may be made of aluminum oxide, quartz, silicon dioxide, calcium zirconate or a glass ceramic.
  • the base 20 has a wafer holder 21 at the center, and the base 20 has a recess 22, and the four slots 22 and the wafer holder 21 are on the same side of the base 20, and the wafer holder 21 is disposed in the recess 22.
  • the wafer holder 21 can be formed by a thermally conductive base 23, and the material of the thermally conductive base 23 can be a metal having a high thermal conductivity.
  • the heat conductive base 23 can be used to help the light emitting diode 31 to conduct heat. Moreover, since the heat conducting base 23 has a flange 231 on the other side of the wafer holder 21, and the flange 231 is exposed outside the base 20, it can be exposed by the flange 231 of the base 20. The heat generated by the light emitting diode 31 is dissipated.
  • the above-mentioned wafer set 30 is disposed on the wafer holder 21, and the wafer set 30 has a plurality of light-emitting diodes 31. Since the wafer holder 21 can be constituted by the heat-conducting base 23, the heat generated when each of the LEDs 31 in the wafer group 30 is emitted can be quickly eliminated by the heat-conducting base 23, so that each of the light-emitting diodes 31 can be stably discharged. .
  • the circuit board 40 is disposed in the recess 22 of the base 20, and the material of the circuit board 40 can be a metal having high conductivity, such as silver, copper, gold, and the like. Moreover, each of the two LEDs 31 and the circuit board 40 can be formed in an anti-parallel manner by wire bonding, and electrically connected by using the external wires 60, so that the external wires 60 and the circuit structure on the circuit board 40 can be used. Further, a plurality of AC LEDs 32 are formed (refer to FIG. 2 in combination).
  • the problem of brightness Moreover, it is easier to provide a complicated circuit structure on the circuit board 40, so that the process cost can be reduced and the excellent rate can be improved.
  • the base 20 can further have a heat conducting portion 24, such as a heat conducting column and a heat conducting portion 24 It is through the susceptor 20, so that one end of the heat conducting portion 24 is connected to the wafer holder 21, and the other end is connected to the bottom of the susceptor 20, so that the heat generated when the light emitting diode 31 in the wafer holder 21 emits light can pass.
  • the heat transfer portion 24 is conducted to the bottom of the susceptor 20 to be excluded.
  • the susceptor 20 can further have a buried capacitor 50 , which is composed of a pair of metal layers 52 and a dielectric layer 51 , and is respectively connected by a conductive path 53 .
  • the circuit board 40 and the external electrode 80 are electrically connected.
  • FIG. 2 Please refer to Figure 2 for an equivalent circuit diagram of Figure 1A. Therefore, when the buried capacitor 50 is disposed in the susceptor 20, and a resistor R is externally connected, and an AC power source AC is input, a resistor-capacitor delay circuit structure as shown in FIG. 2 can be formed to generate a phase. The effect of the delay is to control the light-emitting time of the AC LED 32 to avoid flickering when the AC LED 32 emits light.
  • each AC LED 32 can also be electrically connected to each other by wire bonding to the circuit board 40, thereby allowing the plurality of AC LEDs 32 to be connected in series, in parallel, or in series. And connected in parallel.
  • FIG. 3A is a top view of a preferred embodiment of an AC LED structure 10 of the present invention.
  • the AC LED 32 is electrically connected to the circuit board 40 by using an external wire 60.
  • the equivalent circuit diagram is shown in FIG. 3B, which is an equivalent circuit diagram of FIG. 3A, and the AC LEDs 32 are connected in series. Circuit configuration.
  • FIG. 4 it is a top view of a preferred embodiment of an AC LED structure 10 of the present invention.
  • An AC LED structure 10 according to a second preferred embodiment of the present invention includes a susceptor 20, a chipset 30, and at least one circuit board 40.
  • the susceptor 20 has a wafer holder 21 and a recess 22, and the wafer holder 21 and the recess 22 are located on the same side of the susceptor 20, and the wafer holder 21 can be located at the center of the recess 22.
  • the base 20 may be formed by stacking a plurality of ceramic layers, and the base 20 may be made of aluminum oxide, a quartz, a silica, a calcium zirconate or a glass ceramic.
  • the above-mentioned chip set 30 is disposed on the wafer holder 21 of the recess 22 in the susceptor 20, and the chip set 30 has a plurality of bi-directional AC light-emitting diodes 33, which are grouped by two light-emitting diodes 31, and In the anti-parallel manner, the two LEDs 31 are electrically connected by the internal wires 70 for forming a plurality of bidirectional AC LEDs 33 in the chip set 30.
  • the circuit board 40 described above is disposed in the recess 22 of the susceptor 20 and is located outside the wafer holder 21. Further, the material of the circuit board 40 may be a metal having a high conductivity, such as silver, copper, or gold. Multiple pairs of bidirectional AC light emitting diodes in chip set 30
  • each circuit board 40 can also be electrically connected to each other by wire bonding, so that the double-conducting AC LED 33 can form a series/parallel circuit structure.
  • a complicated circuit structure may be disposed on the circuit board 40, so that the bidirectional AC LEDs electrically connected to the circuit board 40 may be connected in series by a complicated circuit on the circuit board 40. in parallel.
  • FIG. 5 which is an equivalent circuit diagram of FIG. 4, a plurality of double-conducting AC LEDs 33 form a series and parallel circuit structure, which is made by wire on the circuit board 40.
  • the AC LEDs 33 are electrically connected. Since each of the double-conducting AC LEDs 33 is electrically connected by using the external wires 60 and the circuit board 40, the number of the inner wires 70 can be reduced, and the outer wires 60 and the circuit board 40 can withstand high voltage and high current. The input allows it to improve the problem that the inner conductor 70 is easily blown by high current input.
  • the arrangement of a large number of inner wires 70 is liable to cause a problem of shading, resulting in a decrease in illumination brightness.
  • the outer wires 60 and the circuit board 40 are used to reduce the number of inner wires 70 used, it is possible to avoid shading and increase the light-emitting area.
  • the pedestal 20 is further provided with a buried capacitor 50 as described in the first embodiment above, and is electrically connected to the bidirectional AC luminescent diode 33 via the conductive via 53 in the buried capacitor 50.
  • a resistor R is externally connected, a resistor-capacitor delay circuit structure can be formed to achieve phase delay, which can avoid the flicker phenomenon of the bidirectional AC LED 33.
  • the wafer holder 21 in the susceptor 20 can also be formed by a heat conducting base 23 or have a heat conducting portion 24 as described in the first embodiment, and the heat conducting base 23 and the heat conducting portion 24 can be used.
  • Each of the dual-conducting AC LEDs 33 in the chip set 30 is thermally and thermally dissipated, so that each of the dual-conducting AC LEDs 33 can be stabilized.
  • the present invention relates to an alternating current light emitting diode structure comprising: a susceptor, a wafer set, and at least one circuit board.
  • the susceptor has a wafer holder, and the chip set and the circuit board are respectively disposed on the wafer holder and the base.
  • the chipset has a plurality of light emitting diodes, and each of the two light emitting diodes is wired on the circuit board, and the circuit structure on the circuit board is used to form at least one alternating current light emitting diode, and replaces the use of the inner conductor. . Since the circuit board can form a complicated circuit structure and can carry a relatively high current and voltage, it is possible to avoid the problem that the inner wire is blown.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Description

交流发光二极管结构 技术领域
本发明涉及一种发光二极管结构， 特别是涉及一种应用于减少交流发 光二极管中内导线数量， 可延长使用寿命， 减少遮蔽出光面积而可提升照 明亮度的交流发光二极管结构。 背景技术
在高功率发光二极管结构中， 其是藉由使用半导体制造工艺（制程)技 术，将多颗发光二极管制作于单晶片中， 并且使用了大量的内导线， 用以连 接复数个发光二极管而形成串联或并联电路结构， 以达到提升整体出光亮 度的目的。
如美国专利第 US2005/0253151 A1 号所揭露 "一种具有发光单元的发 光装置"， 其包括： 复数个发光单元组形成于一绝缘基板上； 复数个发光单 元组是相互电性连接， 又每一发光单元组是由复数个发光单元以等数量分 组所构成， 且每一发光单元组中的复数个发光单元是以拉链形式交错排列 并形成反向并联的电路结构。
其中，复数个发光单元是直流发光二极管， 且彼此电性绝缘， 再藉由使 用内导线而相互电性连接， 并形成反向并联的电路结构， 因而形成交流发 光二极管， 使得可以直接以交流电源驱动发光装置而出光。 又由于绝缘基 板上设置有复数个发光单元， 使其可以提升发光装置的整体照明亮度。
但是上述的美国专利第 US2005/0253151 A1存在有以下的缺点： 一、 由于每一交流发光二极管是由二直流发光二极管所组成，且每一直 流发光二极管是使用内导线而电性相连， 但内导线无法负载高电流，因此在 高电流输入时， 便有可能造成某一内导线的坏损。
二、 当因为内导线坏损而使任两直流发光二极管出现断路时，将导致其 中一交流发光二极管无法正常出光， 使得整体照明亮度降低。
三、 大量内导线的使用， 导致出光面积受到遮蔽而降低照明亮度。 四、 内导线的设计较为复杂， 因此使得成本提高， 且优良率低。
由此可见， 上述现有的交流发光二极管结构在结构与使用上， 显然仍 存在有不便与缺陷， 而亟待加以进一步改进。 为解决上述存在的问题，相关 厂商莫不费尽心思来谋求解决之道， 但长久以来一直未见适用的设计被发 展完成， 而一般产品又没有适切的结构能够解决上述问题， 此显然是相关 业者急欲解决的问题。 因此如何能创设一种新的交流发光二极管结构，实属 当前重要研发课题之一，亦成为当前业界极需改进的目标。 发明内容
本发明的目的在于， 克服现有的交流发光二极管结构存在的缺陷，而提 供一种新的交流发光二极管结构， 所要解决的技术问题是使其使用外导线 连接每一发光二极管， 用以取代内导线的设置， 又藉由外导线是可以承受 高电压及高电流输入， 而可使得交流发光二极管结构达到不容易损坏的功 效，非常适于实用。
本发明的另一目的在于， 提供一种新的交流发光二极管结构，所要解决 的技术问题是使其藉由外导线的使用， 可以减少遮蔽出光面积， 进而能够 提升照明亮度， 从而更加适于实用。
本发明的还一目的在于， 提供一种新的交流发光二极管结构，所要解决 的技术问题是使其藉由使用外导线及电路板， 可以降低发光二极管结构设 计的复杂程度， 从而更加适于实用。
本发明的目的及解决其技术问题是采用以下技术方案来实现的。 依据 本发明提出的一种交流发光二极管结构， 其包括： 一基座， 其具有一晶片 座；一晶片组，其设置于该晶片座上，又该晶片组具有复数个发光二极管；以 及至少一电路板， 其设置于该基座上，且该些发光二极管是与该电路板电性 连接， 并藉由该电路板形成至少一交流发光二极管。
本发明的目的及解决其技术问题还可采用以下技术措施进一步实现。 前述的交流发光二极管结构，其中所述的基座是由复数个陶瓷层堆叠 形成。
前述的交流发光二极管结构，其中所述的基座的材质是为一氧化铝、 一 石英、 一二氧化硅、 一锆酸钙或一玻璃陶瓷。
前述的交流发光二极管结构，其中所述的基座在具有该晶片座之侧是 具有一凹槽。
前述的交流发光二极管结构，其中所述的晶片座是为一导热基座。 前述的交流发光二极管结构，其中所述的基座进一步具有一导热部。 前述的交流发光二极管结构，其中所述的基座进一步具有一埋入式电 容，且该埋入式电容是作为延迟电路， 用以与该些发光二极管电性连接。
前述的交流发光二极管结构，其中所述的该些交流发光二极管是彼此 以串联方式相互连接。
前述的交流发光二极管结构，其中所述的该些交流发光二极管是彼此 以并联方式相互连接。
前述的交流发光二极管结构，其中所述的该些交流发光二极管电路是 以串联及并联方式连接。
本发明的目的及解决其技术问题还采用以下技术方案来实现。 依据本 发明提出的一种交流发光二极管结构，其包括： 一基座，其具有一晶片座；一 晶片组， 其设置于该晶片座上， 又该晶片组具有复数个双向导通交流发光 二极管， 且该些双向导通交流发光二极管，是以二发光二极管为一组反向并 联方式电性相连； 以及至少一电路板， 其设置于该基座上， 且该些双向导 通交流发光二极管是与该电路板电性连接， 并藉由该电路板形成串联 /并联 电路结构。
本发明的目的及解决其技术问题还可采用以下技术措施进一步实现。 前述的交流发光二极管结构，其中所述的基座是由复数个陶瓷层堆叠 形成。
前述的交流发光二极管结构，其中所述的基座的材质是为一氧化铝、 一 石英、 一二氧化硅、 一锆酸钙或一玻璃陶瓷。
前述的交流发光二极管结构，其中所述的基座在具有该晶片座之侧是 具有一 槽。
前述的交流发光二极管结构，其中所述的晶片座进一步由一导热基座 所构成。
前述的交流发光二极管结构，其中所述的基座进一步具有一导热部。 前述的交流发光二极管结构，其中所述的基座进一步具有一埋入式电 容，其是与该些双向导通交流发光二极管电性连接。
本发明与现有技术相比具有明显的优点和有益效果。 借由上迷技术方 案，本发明交流发光二极管结构至少具有下列的优点及有益效果：
1、 本发明由于使用可负载高电压及高电流的外导线及电路板取代内导 线，所以可以避免产生因超过负载而熔断内导线的问题。
. 2、 本发明藉由外导线的使用， 使得交流发光二极管结构的使用寿命可 以延长。
3、 本发明的外导线可以减少遮蔽出光面积， 所以能够提升照明亮度。 综上所述， 本发明使用外导线连接每一发光二极管， 用以取代内导线 的设置， 又藉由外导线是可以承受高电压及高电流输入， 因此可以使得交 流发光二极管结构达到不容易损坏的功效。 另外， 本发明藉由外导线的使 用，可以减少遮蔽出光面积，进而能够提升照明亮度。 再者，本发明由于使用 外导线及电路板， 因此可以降低发光二极管结构设计的复杂程度。 本发明 在技术上有显著的进步，并具有明显的积极效果，诚为一新颖、 进步、 实用 的新设计。
上述说明仅是本发明技术方案的概述， 为了能够更清楚了解本发明的 技术手段， 而可依照说明书的内容予以实施， 并且为了让本发明的上述和 其他目的、 特征和优点能够更明显易懂， 以下特举较佳实施例， 并配合附 图，将本发明的具体特征以及优点详细说明如下。 附图的简要说明
图 1A是本发明的一种交流发光二极管结构较佳实施例的立体图。
图 1B是本发明妁一种交流发光二极管结构较佳实施例的俯视图一。 图 1C是本发明沿图 1A中 A-A剖面线的较佳实施例的剖视图一。
图 1D是本发明沿图 1A中 A- A剖面线的较佳实施例的剖视图二。
图 2是图 1A的等效电路图。
图 3A是本发明的一种交流发光二极管结构较佳实施例的俯视图二。 图 3B是图 3A的等效电路图。
图 4是本发明的一种交流发光二极管结构较佳实施例的俯视图三。 图 5是图 4的等效电路图。
10: 交流发光二极管结构 20 基座
21： 晶片座 22 . 凹槽
23: 导热基座 231:凸缘
24： 导热部 30 晶片组
31 : 发光二极管 32 交流发光二极管
33: 双向导通交流发光二极管 40 电路板
50: 埋入式电容 51 介电层
52： 金属层 53 导电通道
60: 外导线 70 内导线
80: 外部电极 R: 电阻
AC: 交流电源 实现发明的最佳方式
为更进一步阐述本发明为达成预定发明目的所采取的技术手段及功 效，以下结合附图及较佳实施例， 对依据本发明提出的交流发光二极管结构 其具体实施方式、 结构、 特征及其功效， 详细说明如后。
有关本发明前述及其他技术内容、 特点及功效， 在以下配合参考图式 的较佳实施例的详细说明中将可清楚呈现。 通过具体实施方式的说明，当可 对本发明为达成预定目的所采取的技术手段及功效得一更加深入且具体的 了解， 然而所附图式仅是提供参考与说明之用， 并非用来对本发明加以限 制。
图 1A是本发明一种交流发光二极管结构 10较佳实施例的立体图，图 1B 是本发明的一种交流发光二极管结构 10较佳实施例的俯视图一，图 1C是本 发明沿图 1A中 A-A剖面线的较佳实施例的剖视图一， 图 1D是本发明沿图 1A中 A-A剖面线的较佳实施例的剖视图二。 图 2是图 1A的等效电路图。 图 3A是本发明一种交流发光二极管结构 1 0较佳实施例的俯视图二，图 3B是图 3A的等效电路图。图 4是本发明的一种交流发光二极管结构 10较佳实施例 的俯视图三。 图 5是图 4的等效电路图。
〈第一实施例 >
请参阅图 1A所示, 是本发明的一种交流发光二极管结构 H)较佳实施 例的立体图。 本发明较佳实施例的一种交流发光二极管结构 1 0， 包括一基 座 20、 一晶片组 30以及至少一电路板 40。
请参阅图 IB所示， 是本发明的一种交流发光二极管结构 10较佳实施 例的俯视图一。 上述的基座 20,其可以由复数个陶瓷层堆叠形成，而基座 20 的材质可以为一氧化铝、 一石英、 一二氧化硅、 一锆酸钙或一玻璃陶瓷。
请结合参阅图 1C所示， 是本发明沿图 1A中 A-A剖面线的较佳实施例 的剖视图一。 基座 20的中央处是具有一晶片座 21， 又该基座 20具有一凹 槽 22， 且四槽 22与晶片座 21是位于基座 20的同一侧， 并且晶片座 21设 置于凹槽 22的中央处。 又晶片座 21可以由一导热基座 23所构成， 而导热 基座 23的材质可以为一具有高导热系数的金属。
因此， 当发光二极管 31与晶片座 21结合时， 导热基座 23可用以帮助 发光二极管 31导热。 并且， 由于导热基座 23在构成晶片座 21的另一侧具 有一凸缘 231， 且该凸缘 231是外露于基座 20之外， 因此可以藉由外露于 基座 20的凸缘 231将发光二极管 31产生的热散除。
请参阅图 1B及图 1C所示， 上述的晶片组 30 , 设置于晶片座 21上，又 晶片组 30具有复数个发光二极管 31。由于晶片座 21可以由导热基座 23所 构成， 因此晶片组 30中每一发光二极管 31 出光时产生的热， 可以迅速藉 由导热基座 23而被排除， 使得每一发光二极管 31可以稳定出光。
上述的电路板 40 ,设置于基座 20的凹槽 22中， 且电路板 40的材质可 以为一具有高导电系数的金属， 例如： 银、 铜、 金……。 又， 每两支发光 二极管 31与电路板 40可以藉由打线方式形成反向并联， 并使用外导线 60 而电性相连， 使其可以藉由外导线 60及电路板 40上的电路结构， 进而形 成复数个交流发光二极管 32 (结合参阅图 2所示）。
而藉由外导线 60及电路板 40而电性相连的发光二极管 31，由于外导线 60及电路板 40所能负载的电流及电压皆大于内导线 70 (如图 4所示），因此 外导线 60及电路板 40较不容易产生熔断的问题， 使得交流发光二极管结 构 10可负载较高的电流及电压输入，且外导线 60可减少遮蔽发光二极管 31 的出光面积， 因此将不会产生降低照明亮度的问题。 又，在电路板 40上设 置复杂的电路结构较容易， 因此亦可以降低制程成本，并提高优良率。
请参阅图 1D所示， 是本发明沿图 1A中 A- A剖面线的较佳实施例的剖 视图二。 基座 20中可以进一步具有一导热部 24，例如：导热柱，又导热部 24 是贯穿基座 20， 因此导热部 24的一端是连接至晶片座 21， 而另一端则与 基座 20的底部相连接， 使得晶片座 21中的发光二极管 31出光时所产生的 热，可以通过导热部 24传导至基座 20的底部而排除。
请参阅图 1C及图 1D所示， 该基座 20可以进一步的具有一埋入式电容 50,其是由一对金属层 52及一介电层 51所组成， 并藉由导电通道 53分别 与电路板 40及外部电极 80电性相连。
请结合参阅图 2所示， 是图 1A的等效电路图。 因此，当基座 20中设置 有埋入式电容 50， 且再外接一电阻 R， 并输入一交流电源 AC时， 可形成如 图 2所示的电阻-电容延迟电路结构，使其可以产生相位延迟的功效，藉以控 制交流发光二极管 32的出光时间， 可以避免交流发光二极管 32 出光时产 生闪烁的现象。
当发光二极管 31组成复数个交流发光二极管 32之后， 又每一交流发 光二极管 32 亦可以通过打线于电路板 40上而彼此电性连接， 因此使得复 数个交流发光二极管 32可以串联、 并联或串联及并联方式相互连接。 举例 来说， 请参阅图图 3A所示， 是本发明的一种交流发光二极管结构 10较佳 实施例的俯视图二。 交流发光二极管 32藉由打线方式， 使用外导线 60而 与电路板 40电性连接， 其等效电路图如图 3B所示， 其是图 3A的等效电路 图，交流发光二极管 32是形成串联的电路结构。
〈第二实施例 >
请参阅图 4所示， 是本发明的一种交流发光二极管结构 10较佳实施例 的俯视图三。本发明第二较佳实施例的一种交流发光二极管结构 10，其包括 一基座 20、 一晶片组 30以及至少一电路板 40。
上述的基座 20， 具有一晶片座 21及一凹槽 22 , 且该晶片座 21与凹槽 22是位于基座 20的同一侧， 又晶片座 21可以位于凹槽 22的中央处。 而基 座 20可以由复数个陶瓷层堆叠形成，又基座 20的材质可为一氧化铝、 一石 英、 一二氧化硅、 一锆酸钙或一玻璃陶瓷。
上述的晶片组 30，设置于基座 20中凹槽 22的晶片座 21上， 又该晶片 組 30具有复数个双向导通交流发光二极管 33 , 其是以二发光二极管 31为 一组， 并以反向并联的方式， 藉由内导线 70使二个发光二极管 31 电性相 连，用以在晶片组 30中形成复数个双向导通交流发光二极管 33。
请参阅图 4所示， 上述的电路板 40，设置于基座 20的凹槽 22中，且位 于晶片座 21 的外侧。 又该电路板 40的材 可以为一具有高导电系数的金 属，例如： 银、 铜、 金 ... ...。 晶片组 30 中复数个双向导通交流发光二极管
33藉由打线而与电路板 40电性相连， 又每一电路板 40亦可以使用打线方 式而彼此电性相连， 使得双向导通交流发光二极管 33可形成串联 /并联电 路结构。 除此之外，亦可以在电路板 40上设置有复杂的电路结构，使得与电路板 40电性相连的双向导通交流发光二极管 33，可藉由电路板 40上复杂的电路 构形成串联 /并联。
请参阅图 5所示， 是图 4的等效电路图， 复数个双向导通交流发光二 极管 33形成串联及并联的电路结构， 其是藉由在电路板 40上打线而使得 每一双向导通交流发光二极管 33电性相连。 由于每一双向导通交流发光二 极管 33是使用外导线 60及电路板 40而电性相连，因此可以减少内导线 70 的使用数量， 又该外导线 60及电路板 40可承受高电压与高电流的输入，使 得其可以改善内导线 70容易因高电流输入而熔断的问题。
除此之外， 大量内导线 70的设置容易产生遮光的问题， 导致照明亮度 降低， 当使用外导线 60及电路板 40而减少内导线 70的使用数量之后，将 可以避免遮光并增加出光面积。
又基座 20是可以如上述第一实施例中所述， 进一步具有一埋入式电容 50，并藉由埋入式电容 50中导电通道 53与双向导通交流发光二极管 33电 性连接。 当再外接一电阻 R时， 便可形成电阻-电容延迟电路结构， 达到相 位延迟的功效， 可以避免双向导通交流发光二极管 33产生闪烁现象。
并且， 基座 20中的晶片座 21亦可以如上述第一实施例中所述，进一步 由一导热基座 23所构成或具有一导热部 24 ,且导热基座 23及导热部 24皆 可用以帮助晶片组 30中每一双向导通交流发光二极管 33导热及散热，使得 每一双向导通交流发光二极管 33都可以稳定出光。
以上所述， 仅是本发明的较佳实施例而已， 并非对本发明作任何形式 上的限制， 虽然本发明已以较佳实施例揭露如上， 然而并非用以限定本发 明，任何熟悉本专业的技术人员， 在不脱离本发明技术方案范围内，当可利 用上述揭示的技术内容作出些许更动或修饰为等同变化的等效实施例，但 凡是未脱离本发明技术方案内容， 依据本发明的技术实质对以上实施例所 作的任何简单修改、 等同变化与修饰，均仍属于本发明技术方案的范围内。 工业应用性
本发明是有关一种交流发光二极管结构， 其包括:基座、 晶片组以及至 少一电路板。 基座具有晶片座， 且晶片组及电路板分别设置于晶片座及基 座上。 又晶片组具有复数个发光二极管， 而每两发光二极管是藉由打线于 电路板上， 并利用电路板上的电路结构， 使其可形成至少一交流发光二极 管，并取代了内导线的使用。 由于电路板可形成较复杂的电路结构， 且可负 载较高的电流及电压通过， 因此可以避免产生内导线熔断的问题。

Claims

权 利 要 求
1、 一种交流发光二极管结构，其特征在于其包括：
一基座， 其具有一晶片座；
一晶片组， 其设置于该晶片座上，又该晶片組具有复数个发光二极管； 以及
至少一电路板， 其设置于该基座上，且该些发光二极管是与该电路板电 性连接， 并藉由该电路板形成至少一交流发光二极管。
2、 根据权利要求 1 所述的交流发光二极管结构，其特征在于其中所述 的基座是由复数个陶瓷层堆叠形成。
3、 根据权利要求 1 所述的交流发光二极管結构，其特征在于其中所述 的基座的材质是为一氧化铝、 一石英、 一二氧化硅、 一锆酸钙或一玻璃陶 瓷。
4、 根据权利要求 1 所述的交流发光二极管结构，其特征在于其中所述 的基座在具有该晶片座之侧是具有一凹槽。
5、 根据权利要求 1 所述的交流发光二极管结构，其特征在于其中所述 的晶片座是为一导热基座。
6、 根据权利要求 1 所述的交流发光二极管结构，其特征在于其中所述 的基座进一步具有一导热部。
7、 根据权利要求 1 所述的交流发光二极管结构，其特征在于其中所述 的基座进一步具有一埋入式电容， 且该埋入式电容是作为延迟电路， 用以 与该些发光二极管电性连接。
8、 根据权利要求 1 所述的交流发光二极管结构，其特征在于其中所述 的该些交流发光二极管是彼此以串联方式相互连接。
9、 根据权利要求 1 所述的交流发光二极管结构，其特征在于其中所述 的该些交流发光二极管是彼此以并联方式相互连接。
10、根据权利要求 1所述的交流发光二极管结构，其特征在于其中所述 的该些交流发光二极管电路是以串联及并联方式连接。
11、 一种交流发光二极管结构，特征在于其包括：
一基座， 其具有一晶片座；
一晶片组， 其设置于该晶片座上， 又该晶片组具有复数个双向导通交 流发光二极管， 且该些双向导通交流发光二极管，是以二发光二极管为一组 反向并联方式电性相连； 以及
至少一电路板， 其设置于该基座上， 且该些双向导通交流发光二极管 是与该电路板电性连接， 并藉由该电路板形成串联 /并联电路结构。
12、 根据权利要求 11 所述的交流发光二极管结构，其特征在于其中所 述的基座是由复数个陶瓷层堆叠形成。
13、 才 据权利要求 11 所述的交流发光二极管结构，其特征在于其中所 述的基座的材质是为一氧化铝、 一石英、 一二氧化硅、 一锆酸钙或一玻璃 陶瓷。
14、 根据权利要求 11 所述的交流发光二极管结构，其特征在于其中所 述的基座在具有该晶片座之侧是具有一四槽。
15、 ^据权利要求 11 所述的交流发光二极管结构，其特征在于其中所 述的晶片座进一步由一导热基座所构成。
16、 4艮据权利要求 11 所述的交流发光二极管结构，其特征在于其中所 述的基座进一步具有一导热部。
17、 根据权利要求 11 所述的交流发光二极管结构，其特征在于其中所 述的基座进一步具有一埋入式电容， 其是与该些双向导通交流发光二极管 电性连接。
PCT/CN2008/001698 2008-10-07 2008-10-07 交流发光二极管结构 WO2010040245A1 (zh)

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EP4261885A1 (en) * 2022-04-11 2023-10-18 Xiamen PVTECH Co., Ltd. Environmentally-friendly light-emitting diode with high reliability

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JPH10321915A (ja) * 1997-05-15 1998-12-04 Rohm Co Ltd 半導体発光素子
WO2006095949A1 (en) * 2005-03-11 2006-09-14 Seoul Semiconductor Co., Ltd. Led package having an array of light emitting cells coupled in series
CN1961614A (zh) * 2004-06-03 2007-05-09 皇家飞利浦电子股份有限公司 交流驱动发光二极管
JP2007123329A (ja) * 2005-10-25 2007-05-17 Hitachi Aic Inc 発光素子搭載用配線板及びそれを使用した発光装置

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JPH10321915A (ja) * 1997-05-15 1998-12-04 Rohm Co Ltd 半導体発光素子
CN1961614A (zh) * 2004-06-03 2007-05-09 皇家飞利浦电子股份有限公司 交流驱动发光二极管
WO2006095949A1 (en) * 2005-03-11 2006-09-14 Seoul Semiconductor Co., Ltd. Led package having an array of light emitting cells coupled in series
JP2007123329A (ja) * 2005-10-25 2007-05-17 Hitachi Aic Inc 発光素子搭載用配線板及びそれを使用した発光装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4261885A1 (en) * 2022-04-11 2023-10-18 Xiamen PVTECH Co., Ltd. Environmentally-friendly light-emitting diode with high reliability

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