201015696 九、發明說明： 【發明所屬之技術領域】 本發明係為一種交流發光二極體結構，特別為一 減少交流發光二極體中内導線數量之交流發光二極^應用於 體結構。 【先前技術】 Ο201015696 IX. Description of the Invention: [Technical Field] The present invention is an AC light-emitting diode structure, in particular, an AC light-emitting diode for reducing the number of internal wires in an AC light-emitting diode. [Prior Art] Ο
在高功率發光二極體結構巾，其係藉由㈣ 術，將多顆發光二極體製作於單晶片中，且使用了大旦、程技 線’用以連接複數個發光二極體而形成串聯或並聯電導 以達到提升整體出光亮度之目的。 、σ ’ 如美國專利第US2G()5/()253151 A1所揭露「—種 兀之發光裝置」’其包括：複數發光單元組形成於—絕緣基= 上；複數個發光單元組係相互電性連接，又每—發光單元^ 由複數個發光單元以等數量分組所構成，且每―發光單元組中 之 之複數個發光單元係以拉鏈形式交錯排列並形成反向並聯 電路結構。 其中，複數個發光單元係為直流發光二極體，且彼此電性 絕緣’再藉由使用㈣線而相互電性連接，並形成反向並聯之 電路結構’因而形成交流發光二極體，使得可以直接以交流電 ，驅動發光裝i而出光。又由於絕緣基板上設置有複數個發光 單元’使得提升發光裝置之整體照明亮度。 但上述之美國專利第US2005/0253151 A1係具有以下之缺 由於每一交流發光二極體係由二直流發光二極體所組 201015696 成，且每一直流發光二極體係使用内導線而電性相連，但 内導線無法負載高電流，因此於高電流輸入時，便有可能 造成某一内導線之壞損。 二、 當因内導線壞損而使任兩直流發光二極體出現斷路時，將 導致其中一交流發光二極體無法正常出光，使得整體照明 亮度降低。 三、 大量内導線之使用，導致出光面積受到遮蔽而降低照明亮 度。 ©四、内導線之設計較為複雜，因此使得成本提高且良率低。 【發明内容】 本發明係為一種交流發光二極體結構，其係使用外導線連 接每一發光二極體，用以取代内導線之設置，又外導線係可以 承受高電壓及高電流輸入，因此可使得交流發光二極體結構達 到不易損壞之功效。 ©本發明係為一種交流發光二極體結構，藉由外導線之使 用，可減少遮蔽出光面積，進而提升照明亮度。 本發明係為一種交流發光二極體結構，由於其使用外導線 及電路板，因此可降低發光二極體結構設計之複雜程度。 為達上述功效，本發明提供一種交流發光二極體結構，其 包括：一基座，其係具有一晶片座；一晶片組，其係設置於晶 片座上，又晶片組具有複數個發光二極體；以及至少一電路 板，其係設置於基座上，且發光二極體係與電路板電性連接， 並藉由電路板形成至少一交流發光二極體 201015696 為達述力效本發明又提供—種交流發光二極體結構， 其〇括基座，其係具有一晶片座·晶片組，其係設置於晶 片f上，又晶片組具有複數個雙向導通交流發光二極體，且雙 ^通交流發光二極體’係以二發光二極體為-組反向並聯方 以及至少一電路板，其係設置於基座上，且雙向 導通父流發光二極體係盥雷 ❹ 串聯/並聯電路結構。板紐，並藉由電路板形成 藉由本發明的實施， 一、 由於使用可負载$電㈣達到下列進步功效：_ 内導線，所2 、電壓及咼電流之外導線及電路板取代 題。、'可避免產生因超過負載而炫斷内導線之問 二、 藉由外導線之使用 可延長。 使侍父流發光二極體結構之使用壽命 三、 外導線可減少遮蔽出 參 為了使任何熟習相關ΐ二可提升照明亮度。 以實施，且根據本說明者了解本發明之技術内容並據 式，任何熟習相關技藝;揭露之内容、申請專利範圍及圖 點，因此將在實施方:輕易地理解本發明相關之目的及優 點。 "中詳細敘述本發明之詳細特徵以及優 【實施方式】 第1Α圖係為本發明— 俯視實施例圖 施例圖。第1β種交流發光二極體結構10立體實 例圖-。第】、Γ發明之一種交流發光二極體結構1〇 圖係為沿第ΙΑ圏令Α_Α剖線之剖視 7 201015696 實施例圖一。第ID圖係為沿第1A圖中A-A剖線之剖視實施 例圖二。第2圖係為第1A圖之等效電路圖。第3A圖係為本 發明之一種交流發光二極體結構10俯視實施例圖二。第3B圖 係為第3A圖之等效電路圖。第4圖係為本發明之一種交流發 光二極體結構10俯視實施例圖三。第5圖係為第4圖之等效 電路圖。 <第一實施例> ❹ 如第1A圖所示，本實施例係為一種交流發光二極體結構 1〇，其包括：一基座20 ; —晶片組30 ;以及至少一電路板40。 如第1B圖所示，基座20，其係可以由複數個陶瓷層堆疊 形成，而基座20之材質可以為一氧化鋁、一石英、一二氧化 矽、一锆酸鈣或一玻璃陶瓷。 如第1C圖所示，基座20中央處係具有一晶片座21，又 基座20具有一凹槽22，且凹槽22與晶片座21位於基座20 Ο之同一側，並晶片座21設置於凹槽22之中央處。又晶片座21 可以由一導熱基座23所構成，而導熱基座23之材質係可以為 一具有高導熱係數之金屬。 因此當發光二極體31與晶片座21結合時，導熱基座23 可用以幫助發光二極體31導熱。且由於導熱基座23於構成晶 片座21之另一侧具有一凸緣231，且凸緣231係外露於基座 20之外，因此可藉由外露於基座20之凸緣231將發光二極體 31之產熱散除。 如第1B圖及第1C圖所示，晶片組30，其係設置於晶片 201015696 座21上，又晶片組30具有複數個發光二極體31。由於晶片座 21可以由導熱基座23所構成，因此晶片組30中每一發光二極 體31出光時之產熱，可以迅速藉由導熱基座23而被排除，使 得每一發光二極體31可穩定出光。 電路板40，其係設置於基座20之凹槽22中，且電路板 40之材質係可以為一具有高導電係數之金屬，例如：銀、銅、 金…。又每兩發光二極體31與電路板40係可以藉由打線方式 形成反向並聯，並使用外導線60而電性相連，使得可藉由外 ®導線60及電路板40上之電路結構，進而形成複數個交流發光 二極體3 2。 而藉由外導線60及電路板40而電性相連之發光二極體 3卜由於外導線60及電路板40所能負載之電流及電壓皆大於 内導線70，因此外導線60及電路板40較不易產生熔斷之問 題，使得交流發光二極體結構10可負載較高之電流及電壓輸 入，且外導線60可減少遮蔽發光二極體31之出光面積，因此 參將不產生降低照明亮度之問題。又於電路板40上設置複雜之 電路結構較容易，因此亦可以降低製程成本，且提高良率。 如第1D圖中所示，基座20中係可以進一步具有一導熱部 24，例如：導熱柱，又導熱部24係貫穿基座20，因此導熱部 24之一端係連接至晶片座21，而另一端則與基座20之底部連 接，使得晶片座21中之發光二極體31出光時之產熱，可透過 導熱部24傳導至基座20底部而排除。 如第1C圖及第1D圖所示，基座20係可以進一步具有一 埋入式電容50，其係由一對金屬層52及一介電層51所組成， 9 201015696 並藉由V電通道53分別與電路板4〇及外部電極⑼電性相連。 因此當基座2G中設置有埋人式電容％，且再外接一電阻 R並輸入又机電源AC時，係可形成如第2圖所示之電阻_ 電容延遲電路結構’使得可產生相位延遲之功效， 藉以控制交 "ηΛ光-極體32之出光時間，以避免交流發光二極體32出光 時產生閃爍之現象。 當發光一極體31組成複數個交流發光二極體32之後，又 每一父流發光二極體32亦可以透過打線於電路板4〇上而彼此 電性連接’因此使得複數個交流發光二極體32可以串聯、並 聯或串聯及並聯方式相互連接。舉例來說，如第3Α圖所示， 父流發光二極體32藉由打線方式，使用外導線6〇而與電路板 40電性連接，其等效電路圖如第3Β圖所示，交流發光二極體 32係形成串聯之電路結構。 <第二實施例> 如第4圖所示’一種交流發光二極體結構1〇 ’其包括：一 基座20 ; —晶片組3〇 ;以及至少一電路板4〇。 基座20,其係具有一晶片座21及一凹槽22,且晶片座21 與凹槽22係位於基座2〇之同一侧，又晶片座21可以位於凹 槽22之中央處。而基座2〇係可以由複數個陶瓷層堆疊形成， 又基座20之材質係可以為一氧化鋁、一石英、一二氧化矽、 一結酸鈣或一玻璃陶瓷。 晶片組30,其係設置於基座20中凹槽22之晶片座21上’ 又晶片組30具有複數個雙向導通交流發光二極體33，其係以 201015696 二發光二極體31為一組，並以反向並聯之方式，藉由内導線 70使二個發光二極體31電性相連，用以於晶片組30中形成複 數個雙向導通交流發光二極體33。 如第4圖所示，電路板40，其係設置於基座20之凹槽22 中，且位於晶片座21之外側。又電路板40之材質係可以為一 具有高導電係數之金屬，例如：銀、銅、金…。晶片組30中 複數個雙向導通交流發光二極體33藉由打線而與電路板40電 性相連，又每一電路板40亦可以使用打線方式而彼此電性相 ❹連，使得雙向導通交流發光二極體33可形成串聯/並聯電路結 構。 除此之外，亦可以於電路板40上設置有複雜之電路結構， 使得與電路板40電性相連之雙向導通交流發光二極體33，可 藉由電路板40上複雜之電路構形成串聯/並聯。 如第5圖所示，複數個雙向導通交流發光二極體33形成 之串聯及並聯之電路結構，其係藉由於電路板40上打線而使 _得每一雙向導通交流發光二極體33電性相連。由於每一雙向 ❹ 導通交流發光二極體33係使用外導線60及電路板40而電性 相連，因此可減少内導線70之使用數量，又外導線60及電路 板40可承受高電壓與高電流之輸入，使得可改善内導線70易 因高電流輸入而溶斷之問題。 除此之外，大量内導線70之設置易產生遮光之問題，導 致照明亮度降低，當使用外導線60及電路板40而減少内導線 70之使用數量之後，將可避免遮光並增加出光面積。 又基座20係可以如第一實施例中所述，進一步具有一埋 11 201015696 入式電容50,並藉由埋入式電容％ 士播+、s 令5〇中導電通道53與雙向導通 交流發光二極體33電性連接。卷 又 田冉外接一電阻R時，便可形 成電阻-電容延遲電路結構，達到i ^ > 埯勻相位延遲之功效，用以避免 雙向導通父h發光二極體33產生閃燦現象。 且基座20中之晶片座21亦可a J U如第一實施例中所述，進 一步由一導熱基座23所構成或具有_ ' ^ 導熱部24,且導埶基座 23及導熱部24皆可用以幫助晶片έ … ,乃、·且30中每一雙向導通交流發 先一極體33導熱及散熱，使得每— ^ m ^ . 又向導通交流發光二極體 3 3 j以穩疋出光。 惟上述各實施例係用以說明本發明之特點，其目的在使熟 $該技術者能瞭解本發日狀崎並如實施，而非蚊本發明 之專利feu ’故凡其他未脫離本發明所揭示之精神而完成之等 效修飾或修改，仍應包含在以下所述之申請專利範圍卜 【圖式簡單說明】 e第1A圖係為本發明之一種交流發光二極體結構立體 例 圖。 、 第1Β圖係為本發明之一種交流發光二極體結構俯視實施例圖 ——· 〇 第1C圖係為沿第1Α圖中Α-Α剖線之剖視實施例圖一。 第D圖係為沿第1A圖中A-A剖線之剖視實施例圖二。 第2圖係為第1A1I之等效電路圖。 3 |^| 〆 係為本發明之一種交流發光二極體結構俯視實施例圖 12 201015696 第3B圖係為第3A圖之等效電路圖。 第4圖係為本發明之一種交流發光二極體結構俯視實施例圖 —〇 第5圖係為第4圖之等效電路圖。In a high-power light-emitting diode structure towel, a plurality of light-emitting diodes are fabricated in a single wafer by using (4), and a large-sized, process wire is used to connect a plurality of light-emitting diodes. The series or parallel conductance is formed to achieve the purpose of improving the overall brightness of the light. , σ ' as disclosed in U.S. Patent No. 2G() 5/() 253, 151 A1, which is incorporated herein by reference: The sexual connection, and each of the light-emitting units are composed of a plurality of light-emitting units grouped by equal numbers, and a plurality of light-emitting units in each of the light-emitting unit groups are staggered in a zipper form and form an anti-parallel circuit structure. Wherein, the plurality of light-emitting units are DC light-emitting diodes, and are electrically insulated from each other' and then electrically connected to each other by using a (four) line, and form an anti-parallel circuit structure' thus forming an alternating current light-emitting diode, thereby It can directly drive the illuminating device i with alternating current and emit light. Further, since the plurality of light-emitting units are disposed on the insulating substrate, the overall illumination brightness of the light-emitting device is increased. However, the above-mentioned U.S. Patent No. US2005/0253151 A1 has the following disadvantages: each AC light-emitting diode system is formed by two DC light-emitting diode groups 201015696, and each DC light-emitting diode system is electrically connected by using internal wires. However, the inner conductor cannot be loaded with a high current, so when it is input at a high current, it may cause damage to an inner conductor. 2. When any two DC light-emitting diodes are broken due to internal conductor damage, one of the AC light-emitting diodes will not be able to emit light normally, which will reduce the overall illumination brightness. Third, the use of a large number of internal conductors, resulting in the light-emitting area is shielded to reduce the illumination brightness. © Fourth, the design of the inner conductor is more complicated, so the cost is increased and the yield is low. SUMMARY OF THE INVENTION The present invention is an AC light-emitting diode structure that uses an outer wire to connect each light-emitting diode to replace the inner wire, and the outer wire can withstand high voltage and high current input. Therefore, the structure of the AC light-emitting diode can be made to be less susceptible to damage. The present invention is an AC light-emitting diode structure, which can reduce the light-shielding area by using an external wire, thereby improving the illumination brightness. The invention is an AC light-emitting diode structure, and because of the use of external wires and circuit boards, the complexity of the design of the light-emitting diode structure can be reduced. In order to achieve the above effects, the present invention provides an alternating current light emitting diode structure, comprising: a base having a wafer holder; a wafer set disposed on the wafer holder, and the wafer set having a plurality of light emitting diodes And the at least one circuit board is disposed on the base, and the light emitting diode system is electrically connected to the circuit board, and the at least one alternating current light emitting diode 201015696 is formed by the circuit board. Further provided is an AC light-emitting diode structure, which comprises a pedestal having a wafer holder and a wafer set disposed on the wafer f, and the chip set has a plurality of double-conducting AC light-emitting diodes, and The dual-pass AC light-emitting diodes are two-light-emitting diodes-group anti-parallel and at least one circuit board, which is arranged on the pedestal, and the double-conducting parent-emitting light-emitting diode system is connected in series. / Parallel circuit structure. The board is formed by the board by the implementation of the present invention. First, due to the use of loadable power (4), the following advancements are achieved: _ inner conductor, 2, voltage and 咼 current, and wire and circuit board replacement. , 'It can avoid the problem of smashing the inner conductor due to exceeding the load. 2. It can be extended by the use of the outer conductor. The service life of the light-emitting diode structure is made by the waiter. 3. The outer wire can reduce the shielding. In order to make any familiarity, the brightness of the illumination can be improved. In order to achieve the objects and advantages of the present invention, it will be understood by those skilled in the art that the present invention will be understood by those skilled in the art. . DETAILED DESCRIPTION OF THE INVENTION The detailed features and advantages of the present invention are described in detail in the accompanying drawings. A stereoscopic example of the first β-type alternating current light-emitting diode structure 10 is shown. The first embodiment of the present invention is an AC light-emitting diode structure. The figure is a cross-sectional view along the line ΙΑ圏 Α 7 7 201015696 Example 1 of the embodiment. The first ID diagram is a cross-sectional view taken along line A-A of Fig. 1A. Figure 2 is an equivalent circuit diagram of Figure 1A. Fig. 3A is a second embodiment of an alternating current light emitting diode structure 10 of the present invention. Figure 3B is an equivalent circuit diagram of Figure 3A. Fig. 4 is a top plan view of an alternating current emitting diode structure 10 of the present invention. Figure 5 is an equivalent circuit diagram of Figure 4. <First Embodiment> ❹ As shown in FIG. 1A, the present embodiment is an AC light emitting diode structure 1A including: a susceptor 20; a wafer set 30; and at least one circuit board 40 . As shown in FIG. 1B, the susceptor 20 may be formed by stacking a plurality of ceramic layers, and the material of the susceptor 20 may be an alumina, a quartz, a cerium oxide, a calcium zirconate or a glass ceramic. . As shown in FIG. 1C, the susceptor 20 has a wafer holder 21 at the center, and the susceptor 20 has a recess 22, and the recess 22 and the wafer holder 21 are located on the same side of the susceptor 20, and the wafer holder 21 It is disposed at the center of the groove 22. The wafer holder 21 can be formed by a thermally conductive base 23, and the material of the thermally conductive base 23 can be a metal having a high thermal conductivity. Therefore, when the light emitting diode 31 is combined with the wafer holder 21, the heat conductive base 23 can be used to help the light emitting diode 31 to conduct heat. And because the heat conducting base 23 has a flange 231 on the other side of the wafer holder 21, and the flange 231 is exposed outside the base 20, the light can be emitted by the flange 231 exposed on the base 20. The heat production of the polar body 31 is dissipated. As shown in Figs. 1B and 1C, the wafer set 30 is disposed on the mat 21 of the wafer 201015696, and the wafer set 30 has a plurality of light emitting diodes 31. Since the wafer holder 21 can be composed of the heat-conducting base 23, the heat generated by each of the light-emitting diodes 31 in the wafer group 30 can be quickly eliminated by the heat-conducting base 23, so that each of the light-emitting diodes 31 can stabilize the light. The circuit board 40 is disposed in the recess 22 of the base 20, and the material of the circuit board 40 can be a metal having a high conductivity, such as silver, copper, gold, and the like. Further, each of the two LEDs 31 and the circuit board 40 can be formed in an anti-parallel manner by wire bonding, and electrically connected by using the outer wires 60, so that the circuit structure on the outer wires 60 and the circuit board 40 can be used. Further, a plurality of alternating current light emitting diodes 3 2 are formed. The light-emitting diodes 3 electrically connected by the outer wires 60 and the circuit board 40 are larger than the inner wires 70 because the external wires 60 and the circuit board 40 can be loaded with current and voltage. Therefore, the outer wires 60 and the circuit board 40 The problem of melting is less likely to occur, so that the AC LED structure 10 can load a higher current and voltage input, and the external wire 60 can reduce the light-emitting area of the shielding LED 31, so the reference will not reduce the illumination brightness. problem. It is also easier to provide a complicated circuit structure on the circuit board 40, so that the process cost can be reduced and the yield can be improved. As shown in FIG. 1D, the susceptor 20 may further have a heat conducting portion 24, such as a heat conducting column, and the heat conducting portion 24 is penetrated through the susceptor 20, so that one end of the heat conducting portion 24 is connected to the wafer holder 21, and The other end is connected to the bottom of the susceptor 20, so that the heat generated when the light-emitting diode 31 in the wafer holder 21 is emitted can be transmitted to the bottom of the susceptor 20 through the heat conducting portion 24 to be removed. As shown in FIG. 1C and FIG. 1D, the susceptor 20 can further have a buried capacitor 50 composed of a pair of metal layers 52 and a dielectric layer 51, 9 201015696 and by V electrical channel. 53 is electrically connected to the circuit board 4A and the external electrode (9), respectively. Therefore, when the buried capacitor % is disposed in the pedestal 2G, and a resistor R is externally connected and input to the power supply AC, a resistor _ capacitor delay circuit structure as shown in FIG. 2 can be formed to generate a phase delay. The function is to control the light-emitting time of the intersection of the light and the polar body 32 to avoid flickering when the light-emitting diode 32 emits light. After the light-emitting diode 31 is formed into a plurality of alternating current light-emitting diodes 32, each of the parent-emitting light-emitting diodes 32 can also be electrically connected to each other through the wire bonding on the circuit board 4', thus making a plurality of alternating current light-emitting diodes The pole bodies 32 may be connected to each other in series, in parallel, or in series and in parallel. For example, as shown in FIG. 3, the parent-emitting LED 32 is electrically connected to the circuit board 40 by using an external wire 6〇 by a wire bonding method, and the equivalent circuit diagram is shown in FIG. The diodes 32 form a circuit structure in series. <Second Embodiment> As shown in Fig. 4, an alternating current light emitting diode structure 1'' includes: a susceptor 20; a wafer group 3'; and at least one circuit board 4''. The susceptor 20 has a wafer holder 21 and a recess 22, and the wafer holder 21 and the recess 22 are located on the same side of the susceptor 2, and the wafer holder 21 can be located at the center of the recess 22. The susceptor 2 can be formed by stacking a plurality of ceramic layers, and the material of the susceptor 20 can be an alumina, a quartz, a cerium oxide, a calcium silicate or a glass ceramic. The chip set 30 is disposed on the wafer holder 21 of the recess 22 in the susceptor 20. The chip set 30 has a plurality of bi-directional AC illuminating diodes 33, which are grouped by 201015696 two-light-emitting diodes 31. The two LEDs 31 are electrically connected by the inner wires 70 in an anti-parallel manner to form a plurality of bidirectional AC light-emitting diodes 33 in the chip set 30. As shown in FIG. 4, the circuit board 40 is disposed in the recess 22 of the susceptor 20 and is located on the outer side of the wafer holder 21. Further, the material of the circuit board 40 may be a metal having a high conductivity, such as silver, copper, gold... The plurality of bi-directional AC light-emitting diodes 33 in the chip set 30 are electrically connected to the circuit board 40 by wire bonding, and each circuit board 40 can also be electrically connected to each other by using a wire bonding method, so that the double-conducting AC light is emitted. The diode 33 can form a series/parallel circuit structure. In addition, a complicated circuit structure may be disposed on the circuit board 40, so that the dual-conducting AC LEDs 33 electrically connected to the circuit board 40 may be connected in series by a complicated circuit on the circuit board 40. /in parallel. As shown in FIG. 5, a plurality of double-conducting alternating current light-emitting diodes 33 are formed in a series and parallel circuit structure, which is made by the wire on the circuit board 40 to make each of the double-conducting alternating current light-emitting diodes 33 electrically Sexual connection. Since each bidirectional ❹ conducting AC illuminating diode 33 is electrically connected by using the outer lead 60 and the circuit board 40, the number of inner leads 70 can be reduced, and the outer lead 60 and the circuit board 40 can withstand high voltage and high. The input of the current makes it possible to improve the problem that the inner conductor 70 is easily broken by high current input. In addition, the arrangement of a large number of inner wires 70 is liable to cause light-shielding problems, resulting in a decrease in illumination brightness. When the outer wires 60 and the circuit board 40 are used to reduce the number of inner wires 70 used, shading can be avoided and the light-emitting area can be increased. Further, the pedestal 20 can further have a buried capacitor 10 of 50, 2010, 696 as described in the first embodiment, and communicate with the bidirectional conduction channel through the conductive capacitor 53 by the embedded capacitor % s +, s The light emitting diode 33 is electrically connected. When a resistor R is connected to the field and the resistor R is formed, a resistor-capacitor delay circuit structure can be formed to achieve the effect of i ^ > uniform phase delay to avoid the flashing phenomenon of the dual-conducting parent-emitting diode 33. The wafer holder 21 in the susceptor 20 can also be a JU, as described in the first embodiment, further composed of a thermally conductive base 23 or having a heat conducting portion 24, and the guiding base 23 and the heat conducting portion 24 It can be used to help the wafer έ ... , , , and each of the two pairs of conduction conduction currents of the first pole body 33 to conduct heat and dissipate heat, so that each - ^ m ^ . is also guided to the AC light-emitting diode 3 3 j to stabilize sold out. However, the above embodiments are intended to illustrate the features of the present invention, and the purpose of the present invention is to enable the skilled person to understand the present invention and to implement the patent, instead of the patent of the present invention, feu' The equivalent modifications or modifications made by the spirit of the disclosure should still be included in the scope of the patent application described below. [Simplified illustration of the drawing] e Figure 1A is a three-dimensional example of the structure of the AC light-emitting diode of the present invention. . 1 is a plan view of a cross-sectional view of an AC light-emitting diode structure of the present invention - 〇 1C is a cross-sectional view of the first embodiment of the cross-sectional view of FIG. Figure D is a cross-sectional view of Figure 2 along the line A-A in Figure 1A. Figure 2 is an equivalent circuit diagram of the 1A1I. 3 |^| 〆 is a cross-sectional view of an AC light-emitting diode structure of the present invention. FIG. 12 201015696 FIG. 3B is an equivalent circuit diagram of FIG. 3A. Fig. 4 is a plan view showing a structure of an alternating current light emitting diode according to the present invention. Fig. 5 is an equivalent circuit diagram of Fig. 4.
【主要元件符號說明】 10… ...交流發光二極體結構 20….· ...基座 21… ...晶片座 22… ...凹槽 23…·. ...導熱基座 231... ...凸緣 24… ...導熱部 30… ...晶片組 31….· ...發光二極體 32… ...交流發光二極體 33…·· ...雙向導通交流發光二極體 40….· ...電路板 50… …埋入式電容 51…·. ...介電層 52… ...金屬層 53… ...導電通道 60..... ...外導線 内導線 70 13 201015696 80........外部電極 R.........電阻 AC.......交流電源[Explanation of main component symbols] 10... AC illuminating diode structure 20....... pedestal 21... Wafer holder 22... Groove 23...·....thermal base 231... Flange 24... Heat transfer portion 30... Chip set 31.......Light-emitting diode 32...AC light-emitting diode 33...·.. Double-conductor AC light-emitting diode 40..... Circuit board 50... Buried capacitor 51..... dielectric layer 52... metal layer 53... conductive channel 60. .... ...outer wire inner conductor 70 13 201015696 80.......external electrode R......resistance AC.......AC power supply