WO2010024404A1 - Composition abrasive et procédé de fabrication de dispositif de circuit intégré à semi-conducteurs - Google Patents

Composition abrasive et procédé de fabrication de dispositif de circuit intégré à semi-conducteurs Download PDF

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WO2010024404A1
WO2010024404A1 PCT/JP2009/065103 JP2009065103W WO2010024404A1 WO 2010024404 A1 WO2010024404 A1 WO 2010024404A1 JP 2009065103 W JP2009065103 W JP 2009065103W WO 2010024404 A1 WO2010024404 A1 WO 2010024404A1
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Prior art keywords
polishing
copper
acid
polishing composition
layer
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PCT/JP2009/065103
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English (en)
Japanese (ja)
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伊織 吉田
広幸 神谷
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旭硝子株式会社
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Priority to JP2010526797A priority Critical patent/JPWO2010024404A1/ja
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Definitions

  • the present invention relates to a novel polishing composition suitably used for semiconductor integrated circuits and the like.
  • CMP Chemical Mechanical Polishing
  • Specific needs for new polishing compositions include prevention of surface irregularities.
  • Multi-layered wiring means that a circuit is formed and a new circuit is formed using lithography or the like. If the surface of the lower layer circuit has irregularities, the irregularities may also appear on the surface of the layer on which the circuit is newly formed. If this happens, it will be out of the depth of focus in lithography and it will not be possible to form wiring as designed, so in recent semiconductor integrated circuit designs, the surface on which the circuit is formed is planarized with extremely high accuracy, and the surface of the layer above it is formed. It is required not to affect the flatness.
  • an aluminum for forming a wiring groove pattern on the target surface of a semiconductor integrated circuit device and forming the wiring in the groove pattern And a metal having a low specific resistance, such as metal copper.
  • the metal is first formed as a film on the surface by a plating method or a sputtering method.
  • the film is polished by a CMP technique, the metal other than the wiring portion is removed, and a wiring corresponding to the groove is formed. At this time, the polished surface is also flattened.
  • the barrier layer adjacent to the copper layer is exposed.
  • the problem of copper remaining on the barrier layer (copper residue) and the pits (dents) on the copper wiring become problems as surface irregularities.
  • FIG. 1 is a cross-sectional view schematically showing a state in which a portion having a copper residue 21 is raised as compared with a portion 22 having no copper residue. Such a copper residue is likely to occur at a location where the wiring density is high. In that case, the copper wiring at the corresponding location may even be thicker than other locations.
  • FIGS. FIG. 2 shows a state where there is a copper residue 21 at a portion 23 where the wiring density is high.
  • the thickness of the copper wiring in the portion 23 tends to be thicker than the thickness of the copper wiring in the portion 22 where there is no copper remaining.
  • the barrier layer is not shown.
  • the pits on the copper wiring are probably a kind of copper corrosion and are fine enough to be finally seen at a magnification of about tens of thousands of times.
  • Patent Document 1 As a polishing composition for CMP used for polishing copper, an abrasive using rosin (see, for example, Patent Document 1) and a polishing liquid that suppresses erosion by containing a compound having a heterocyclic ring.
  • An invention see, for example, Patent Document 2
  • Patent Document 3 describes that a polishing liquid containing an aliphatic carboxylic acid and benzotriazole is used to adjust the polishing action on copper.
  • these polishing compositions could not completely cope with the copper residue.
  • An object of the present invention is to provide a novel polishing composition that can solve the above-mentioned problem of surface irregularities. Still other objects and advantages of the present invention will become apparent from the following description.
  • the copper layer A polishing composition used in a step of polishing until the adjacent barrier layer is exposed (first polishing step), A dodecylbenzenesulfonic acid component;
  • a polishing composition comprising at least one flatness improver selected from the group consisting of an alkenyl succinic acid component, a polyoxyethylene alkyl ether carboxylic acid component and a polyoxyethylene alkyl ether phosphoric acid component.
  • the polishing composition according to the second aspect wherein the alicyclic resin acid is rosin.
  • the polishing composition according to any one of the above aspects 1 to 4 further comprising colloidal silica as abrasive grains.
  • the polishing composition according to any one of the above aspects 1 to 5, further comprising an oxidizing agent.
  • the polishing composition according to any one of the above aspects 1 to 7, wherein the content of oleic acid in the polishing composition is 0.03% by mass or less.
  • a method of manufacturing a semiconductor integrated circuit device includes an insulating layer having a groove and a copper embedded wiring formed in the groove, A multilayer structure for a semiconductor integrated circuit device in which a barrier layer and a copper wiring layer are formed in this order on the insulating layer, using the polishing composition according to any one of the above aspects 1 to 8, There is provided a method of manufacturing a semiconductor integrated circuit device, comprising polishing until the barrier layer adjacent to a copper layer is exposed.
  • the method for manufacturing a semiconductor integrated circuit device according to the ninth aspect, wherein the barrier layer includes at least one selected from the group consisting of Ta, TaN and TiN.
  • the method for manufacturing a semiconductor integrated circuit device according to the ninth or tenth aspect, wherein the multilayer structure includes a cap layer between the insulating layer and the barrier layer. Is provided.
  • the method for manufacturing a semiconductor integrated circuit device according to any one of the above aspects 9 to 11, wherein the insulating layer having the groove has a relative dielectric constant of 3 or less.
  • the present invention it is possible to solve the problem of dishing while improving the polishing rate of the copper wiring in the first polishing process, and to solve the problem of copper residue and pits on the copper wiring without deteriorating erosion.
  • a novel polishing composition for the polishing process is obtained.
  • FIG. 1 is a cross-sectional view schematically showing a state in which a portion having a copper residue is raised as compared with a portion having no copper residue.
  • FIG. 2 is a cross-sectional view schematically showing a state in which there is a copper residue at a location where the wiring density is high.
  • FIG. 3 is a cross-sectional view schematically showing a state after the cross section in the state of FIG. 2 is subjected to the second polishing step.
  • 4A to 4C are schematic cross-sectional views of the patterned wafer before and after the CMP process in the copper buried wiring forming process.
  • 4A is a cross-sectional view of the semiconductor integrated circuit before polishing, FIG.
  • FIG. 4B is a cross-sectional view of the semiconductor integrated circuit in which dishing has occurred by polishing, and FIG. 4C is ideally polished.
  • FIG. 6 is a cross-sectional view after polishing a semiconductor integrated circuit.
  • FIG. 5 is a schematic cross-sectional view of a patterned wafer for explaining erosion.
  • polishing composition according to the present invention will be described in the case of polishing a surface copper film having a groove for wiring of a semiconductor integrated circuit.
  • the case where the polishing composition according to the present invention is used for polishing copper wiring will be described. It goes without saying that can also be used.
  • the following description exemplifies the present invention, does not limit the scope of the present invention, and it goes without saying that other embodiments may also belong to the category of the present invention as long as they match the gist of the present invention. Yes.
  • the polishing composition according to the present invention is adjacent to the copper layer in pattern formation in which the copper layer provided on the insulating layer via the barrier layer is polished to alternately form the copper embedded wiring and the insulating layer.
  • the polishing composition until the barrier layer is exposed that is, the polishing composition for the first polishing step.
  • the copper portion other than the copper wiring is removed in the first polishing step
  • the barrier layer is removed in the second polishing step, and in most cases, the insulating layer and, if necessary, a part of the copper are extremely used.
  • polishing slightly a flat surface composed of an insulating layer and a copper layer is formed.
  • FIG. 4A A schematic cross section of the patterned wafer before polishing is shown in FIG. 4A.
  • an insulating layer 2 a barrier layer 3, and a wiring metal layer (copper layer) 4 are formed on a Si substrate 1.
  • insulating layer As the insulating layer, a SiO 2 film by plasma CVD using tetraethoxysilane, silane or the like, a low dielectric constant material film (SiOF film, organic SOG film, etc.), and a combination of these with a cap layer, All of these are possible.
  • any known material may be used as the material constituting the insulating layer that is one of the objects to be polished by the polishing composition according to the present invention.
  • An example of such a material is a silicon dioxide film.
  • the silicon dioxide film a film having a crosslinked structure of Si and O and having a ratio of the number of atoms of Si and O of 1: 2 is generally used, but other films may be used.
  • a silicon dioxide film a film deposited by plasma CVD using tetraethoxysilane (TEOS) or silane gas (SiH 4 ) is generally known.
  • TEOS tetraethoxysilane
  • SiH 4 silane gas
  • a film made of a low dielectric constant material having a relative dielectric constant of 3 or less has been used as an insulating layer for the purpose of suppressing signal delay.
  • a low dielectric constant material film include a film made of fluorine-added silicon oxide (SiOF), an organic SOG film (a film containing an organic component obtained by Spin on glass), a low dielectric constant material film such as a porous silica film, An organic silicon material (generally referred to as SiOC) film that is mainly composed of Si—O bonds and includes CH 3 bonds is known. These films can also be suitably used as an insulating layer to which the polishing composition according to the present invention is applied.
  • Organic silicon materials are an extension of conventional technology as process technology, and mass production technology with a wide range of application has been achieved by performing appropriate process tuning. Therefore, a technique for flattening a film using this low dielectric constant material is desired, and the polishing composition according to the present invention can be suitably used.
  • organic silicon material which is a low dielectric constant material
  • trade name: Black Diamond (relative permittivity 2.7, Applied Materials technology), trade name Coral (relative permittivity 2.7, Novellus Systems technology), Aurora 2 7 (relative permittivity 2.7, Japan ASM Co., Ltd. technology) and the like trade name: Black Diamond (relative permittivity 2.7, Applied Materials technology), trade name Coral (relative permittivity 2.7, Novellus Systems technology), Aurora 2 7 (relative permittivity 2.7, Japan ASM Co., Ltd. technology) and the like, and a compound having a Si—CH 3 bond is particularly preferably used.
  • the polishing composition according to the present invention can also be suitably used when a cap layer is formed on an insulating layer.
  • a cap layer is formed on an insulating layer.
  • the cap layer is completely removed and then the insulating layer is shaved and flattened. it can.
  • the cap layer is used to increase the adhesion between the insulating layer and the barrier layer when a low dielectric constant material is used for the insulating layer, or to embed a metal wiring layer in the low dielectric constant insulating layer that is chemically and mechanically fragile. It is a layer provided for the purpose of using as a mask material when the groove is formed by etching or for preventing deterioration of the low dielectric constant material.
  • a film having silicon and oxygen as constituent elements is generally used.
  • An example of such a film is a silicon dioxide film.
  • the silicon dioxide film a film having a crosslinked structure of Si and O and having a ratio of the number of atoms of Si and O of 1: 2 is generally used, but other films may be used.
  • a silicon dioxide film a film deposited by plasma CVD using tetraethoxysilane (TEOS) or silane gas (SiH 4 ) is generally known.
  • the barrier layer is a layer containing at least one selected from the group consisting of Ta, TaN, and TiN formed on the insulating layer by, for example, a sputtering method, and hinders diffusion of copper from the copper layer to the insulating layer. Although arranged for the purpose, in the present invention, in polishing the copper layer, it also serves as a stopper for finding a point in time when the wiring portion appears.
  • the copper layer is formed on the insulating layer via a barrier layer.
  • the film forming method include a method of forming a Cu seed layer to a thickness of about 100 nm by sputtering after forming the barrier layer, and further forming a Cu layer on the Cu seed layer by electrolytic plating.
  • the dishing amount at the time when the barrier layer is exposed is large, the dishing amount varies greatly after the first polishing step is completed and the excess copper layer is removed by overpolishing, and in some cases, the erosion Also occurred.
  • the second polishing step after the barrier layer is shaved, it is necessary to further grind a part of the insulating layer and the copper wiring to finish the copper wiring and the insulating layer smoothly.
  • the amount of polishing in the second polishing step is increased, there may be a portion where the depth of the wiring groove is insufficient due to the in-plane distribution of polishing, or dishing of the copper wiring may be newly generated. Note that erosion is likely to occur in thin wiring portions and dense wiring portions. As shown in FIG.
  • the insulating layer in the wiring portion is excessively polished as compared with the insulating layer portion (Global portion) having no wiring pattern. This is a phenomenon in which the insulating layer is partially thinned. That is, an erosion portion 18 that is further polished than the global portion 20 is generated. In FIG. 5, the barrier layer is omitted.
  • the polishing composition of the present invention when used, the copper wiring is not polished more than necessary by over-polishing, so that the first polishing step does not cause dishing and does not cause erosion. Can be polished.
  • the amount of dishing at the time when the first polishing process is completed by removing the excess copper layer smoothly and uniformly over the entire wafer surface by over-polishing Has a remarkable effect that the thickness can be 55 nm or less.
  • the trench processing amount (wiring groove cutting amount) is shallow, and the polishing amount is reduced. Can be reduced. As a result, the entire process can be performed in a short time, so that the cost can be reduced, and the effects of suppressing variations in the wiring groove depth and dishing of the copper wiring can also be obtained.
  • the polishing composition necessarily contains a dodecylbenzenesulfonic acid component, and at least one selected from the group consisting of an alkenyl succinic acid component, a polyoxyethylene alkyl ether carboxylic acid component and a polyoxyethylene alkyl ether phosphoric acid component.
  • a dodecylbenzenesulfonic acid component at least one selected from the group consisting of an alkenyl succinic acid component, a polyoxyethylene alkyl ether carboxylic acid component and a polyoxyethylene alkyl ether phosphoric acid component.
  • the term “component” is intended to mean that not only the acid itself but also the salt form can be included in addition to the acid itself.
  • the salt form may be generated by reacting with a basic substance added separately as a result of using an acid, or may be added in the form of a salt, but the basic substance added separately as a result of addition as an acid. What is produced by reacting with is common. Specifically, since potassium hydroxide is often used as a basic substance in the polishing composition, at least a part of what is added as an acid reacts with the potassium hydroxide to form a salt. It is thought that.
  • a dodecylbenzenesulfonic acid component is necessarily contained, and at least one flat selected from the group consisting of an alkenyl succinic acid component, a polyoxyethylene alkyl ether carboxylic acid component, and a polyoxyethylene alkyl ether phosphoric acid component.
  • an alkenyl succinic acid component a polyoxyethylene alkyl ether carboxylic acid component
  • a polyoxyethylene alkyl ether phosphoric acid component a dodecylbenzenesulfonic acid component. It has been found that copper residues and pits can be suppressed when included as a property improver. Furthermore, it has been found that the phenomenon called dishing, which scrapes the wiring portion lower than the flat surface, does not deteriorate as compared with conventional abrasives. Furthermore, when the flatness improving agent of the present invention is added, not only the center part (center chip) but also the edge part (edge chip) can be improved. Moreover, the deterioration of erosion is not seen
  • the polishing composition does not contain oleic acid to some extent.
  • the content of oleic acid is 0.03% by mass or less, particularly 0.01%. The mass% or less is preferable.
  • dodecylbenzenesulfonic acid component Specific examples include dodecylbenzenesulfonic acid (see the following formula), sodium dodecylbenzenesulfonate, calcium dodecylbenzenesulfonate, and the like. Note that the carbon chain of the dodecyl group may be linear or branched.
  • dodecylbenzenesulfonic acid has a function as a solubilizing agent for alicyclic resin acids, particularly rosin, and is excellent in that the polishing composition can be concentrated at a high concentration.
  • the content of the dodecylbenzenesulfonic acid component in the polishing composition is 0.002 to 0.2% by mass, further 0.005 to 0.15% by mass, and 0.005 to 0.1% by mass. It is preferable because the polishing composition can be concentrated efficiently.
  • alkenyl succinic acid component examples include alkenyl succinic acid, alkenyl succinic acid dipotassium salt, alkenyl succinic acid dipotassium, alkenyl succinic anhydride and the like.
  • this alkenyl succinic acid dishing can be effectively prevented, and it is excellent in that the effect is seen in a small amount.
  • Flatness is greatly improved by using an alkenyl succinic acid component and an alicyclic resin acid, particularly rosin. The reason is not exactly known, but it is assumed that the alkenyl succinic acid component and the alicyclic resin acid have some chemical synergistic effect.
  • the content of the alkenyl succinic acid component in the polishing composition is 0.0005 to 0.01% by mass, more preferably 0.0007 to 0.008% by mass, and 0.0007 to 0.006% by mass. However, it is preferable because dishing can be effectively prevented.
  • the content ratio (mass ratio) of the alkenyl succinic acid component and the alicyclic resin acid is 1:80 to 1: 5, particularly 1:60 to 1: 3, while preventing dishing. It is preferable because copper residue and pits can be improved.
  • polyoxyethylene alkyl ether carboxylic acid component examples include polyoxyethylene (3) tridecyl ether acetic acid, polyoxyethylene (7) tridecyl ether acetic acid, polyoxyethylene (6) tridecyl ether acetic acid, poly Oxyethylene (3) tridecyl ether sodium acetate, polyoxyethylene (7) sodium tridecyl ether acetate, polyoxyethylene (6) sodium tridecyl ether acetate, polyoxyethylene (4.5) lauryl ether acetic acid and polyoxyethylene (10) Lauryl ether acetic acid and the like are exemplified.
  • polyoxyethylene alkyl ether carboxylic acid component By using a polyoxyethylene alkyl ether carboxylic acid component and an alicyclic resin acid, particularly rosin, flatness is greatly improved. Although the reason is not exactly known, it is assumed that the polyoxyethylene alkyl ether carboxylic acid component and the alicyclic resin acid have some chemical synergistic effect.
  • the polyoxyethylene alkyl ether carboxylic acid component is preferable in that the temperature dependency of the concentration is small and the polishing performance for copper is excellent. Moreover, it is preferable at the point which can be further concentrated by including both a dodecylbenzenesulfonic acid component and a polyoxyethylene alkyl ether carboxylic acid component.
  • polyoxyethylene (3) tridecyl ether acetic acid means a substance consisting of a polyoxyethylene moiety consisting of three oxyethylene bonds and tridecyl ether acetic acid.
  • polyoxyethylene (n) alkyl ether carboxylic acids can be represented as RO- (C 2 H 2 O) n —CH 2 COOH.
  • R is an alkyl group composed of 10 to 15 carbons, and may be linear or branched.
  • the content of the polyoxyethylene alkyl ether carboxylic acid component in the polishing composition is 0.005 to 0.1% by mass, more preferably 0.01 to 0.07% by mass. It is preferable because dishing can be prevented. Further, the content ratio (mass ratio) of the polyoxyethylene alkyl ether carboxylic acid component and the alicyclic resin acid is 2: 1 to 1: 5, particularly 1: 1 to 1: 3. It is preferable because the copper residue can be improved while preventing.
  • the ratio of the polyoxyethylene alkyl ether carboxylic acid component to dodecylbenzene sulfonic acid is preferably 5: 1 to 1: 5, and more preferably 3: 1 to 1: 3.
  • polyoxyethylene alkyl ether phosphate component examples include polyoxyethylene (10) lauryl ether phosphate, dipolyoxyethylene (10) lauryl ether phosphate, polyoxyethylene (8) oleyl ether phosphate, Dipolyoxyethylene (8) oleyl ether phosphoric acid, polyoxyethylene (2) (C 12-15 ) alkyl ether phosphoric acid, polyoxyethylene (4) (C 12-15 ) alkyl ether phosphoric acid, polyoxyethylene ( 8) (C 12-15 ) alkyl ether phosphoric acid, polyoxyethylene (10) (C 12-15 ) alkyl ether phosphoric acid, tripolyoxyethylene (4) lauryl ether phosphoric acid, polyoxyethylene (1) lauryl ether phosphor Examples are acids and their salts.
  • polyoxyethylene (8) oleyl ether phosphoric acid means that it consists of a polyoxyethylene moiety consisting of eight oxyethylene bonds and an oleyl ether phosphate moiety.
  • polyoxyethylene (n) lauryl ether phosphoric acid can be represented as C 12 H 25 O— (C 2 H 2 O) n —H 2 PO 4 .
  • (C 12-15 ) represents the structure of an alkyl group, specifically an alkyl group having 12 to 15 carbon atoms.
  • the content of the polyoxyethylene alkyl ether phosphoric acid component in the polishing composition is 0.005 to 0.1% by mass, more preferably 0.01 to 0.05% by mass. Can be prevented. Further, the content ratio (mass ratio) of the polyoxyethylene alkyl ether phosphoric acid component and the alicyclic resin acid is 2: 1 to 1: 5, particularly 1: 1 to 1: 3. It is preferable because the copper residue can be improved while preventing.
  • the alkenyl succinic acid component, polyoxyethylene alkyl ether carboxylic acid component and polyoxyethylene alkyl ether phosphoric acid component may all be contained, or only one component may be contained. Since the alkenyl succinic acid component has the same effect in a very small amount as compared with other components, the viscosity of the polishing composition can be prevented from rising more than necessary.
  • the polyoxyethylene alkyl ether carboxylic acid component is most excellent in terms of maintaining a good polishing rate and in terms of polishing stability.
  • the alkenyl succinic acid component, the polyoxyethylene alkyl ether carboxylic acid component and the polyoxyethylene alkyl ether phosphoric acid component can all contribute to the flattening of the polished surface, and are therefore referred to as flatness improvers.
  • This polishing composition is preferable in terms of low viscosity. Viscosity is a more important factor than expected in technical fields such as CMP. This is because it is generally very important to make the polishing conditions constant in order to perform stable polishing. However, when the viscosity of the polishing composition is too high, clogging may occur in the abrasive conveyance system or the abrasive may remain. Therefore, whether or not polishing can be performed under the same conditions during long-term polishing largely depends on the viscosity of the abrasive. In order to improve the viscosity, it is preferable not to contain a water-soluble polymer.
  • the water-soluble polymer is a water-soluble polymer having a molecular weight of 5000 or more.
  • the polishing composition may contain a complex forming agent.
  • the complex forming agent means a substance that forms a complex with copper. Inclusion of the complexing agent increases the copper polishing rate, although the mechanism is not clear. Specifically, it is as follows.
  • Carboxylic acid having a nitrogen-containing heterocyclic group (monocarboxylic acid, polycarboxylic acid): 2-pyridinecarboxylic acid, 3-pyridinecarboxylic acid, 4-pyridinecarboxylic acid, 2,3-pyridinedicarboxylic acid, 2,4-pyridine Dicarboxylic acid, 2,5-pyridinedicarboxylic acid, 2,6-pyridinedicarboxylic acid, 3,4-pyridinedicarboxylic acid, 3,5-pyridinedicarboxylic acid, pyrazinecarboxylic acid, 2,3-pyrazinedicarboxylic acid, 2-quinoline Carboxylic acid (quinaldic acid), 3-quinoline carboxylic acid, 4-quinoline carboxylic acid, 8-quinoline carboxylic acid.
  • Carboxylic acid having amino group (amino acid etc.): alanine, glycine, proline, phenylalanine.
  • Carboxylic acid having a hydroxyl group (such as hydroxycarboxylic acid): lactic acid, malic acid, citric acid, isocitric acid, tartaric acid, glycolic acid, gluconic acid, salicylic acid.
  • Carboxylic acid having a thiol group thioglycolic acid, thiosalicylic acid.
  • the complex-forming agent is preferably a polycarboxylic acid or monocarboxylic acid having a nitrogen-containing heterocyclic group, or an aliphatic polycarboxylic acid such as oxalic acid, particularly 2-pyridinecarboxylic acid or 2,3-pyridinecarboxylic acid. Is preferred.
  • a carboxylic acid having a nitrogen-containing heterocyclic group such as 2-pyridinecarboxylic acid, the polishing rate of copper is particularly increased, and adhesion and residue of a copper complex or the like on the polishing pad can be prevented. Demonstrated.
  • the content of the complex-forming agent in the polishing composition of the present invention is 0.1 to 5% by mass, particularly 0.3 to 3% by mass, more preferably 0.5 to 1.5% by mass with respect to the polishing composition. It is preferable that it is mass%. If the amount is less than 0.1% by mass, the polishing rate of copper may decrease, and if it exceeds 5% by mass, corrosion or dishing of the copper surface may occur.
  • the polishing composition preferably contains an alicyclic resin acid.
  • Resin acid is an organic acid (carboxylic acid) that is present as a free or ester in natural resin
  • alicyclic resin acid is a compound having an alicyclic structure among the resin acids (published by Kyoritsu Shuppan Co., Ltd.) (See “Resin acid” in Chemical Dictionary 4).
  • alicyclic resin acid in the present invention a natural resin containing an alicyclic resin acid, a refined product mainly composed of an alicyclic resin acid purified from a natural resin (at the same time, isomerization or the like may occur). Examples thereof include resin acids, alicyclic resin acids which are single compounds extracted from natural resins, and mixtures of two or more thereof.
  • the purified resin acid examples include rosin obtained from pine resin, tall oil, tall oil rosin and the like.
  • a purified resin acid mainly composed of an alicyclic resin acid such as rosin, abietic acid or its isomer, pimaric acid or its isomer, or hydrogenated abietic acid is preferable.
  • a commercially available rosin can be used.
  • rosin is a compound whose composition ratio varies depending on the type of natural resin from which it is derived, but any type of rosin can be used as long as it has an alicyclic resin acid as a main component. Can be used.
  • rosins contain a small amount of aliphatic resin acid.
  • the aliphatic resin acid is mainly an unsaturated higher fatty acid such as oleic acid or linoleic acid, and its content is usually about 10% by mass relative to the whole rosin.
  • alicyclic resin acids that are single compounds include abietic acid, isomers of abietic acid, neoabietic acid, parastrinic acid, levopimaric acid, and the like.
  • dehydroabietic acid and secodehydroabietic acid which are dehydrogenated products of acids.
  • two or more alicyclic resin acids may be contained.
  • a purified resin acid such as rosin is originally a mixture of two or more alicyclic resin acids (single compound), but is regarded as one alicyclic resin acid in the present invention. Therefore, in the polishing composition, two or more kinds of rosins may be contained, or one or more kinds of alicyclic resin acids which are a single compound with rosin may be contained.
  • the alicyclic resin acid may be a derivative of the above-described purified resin acid or a single compound alicyclic resin acid, which is a compound having at least one carboxy group or a mixture containing the same. Good.
  • the derivatives include isomerized products, hydrides, dehydrogenated products, multimerized products, unsaturated compounds (eg, maleic anhydride, alicyclic resin acids) other than alicyclic resin acids extracted from natural resins.
  • unsaturated compounds eg, maleic anhydride, alicyclic resin acids
  • Maleic anhydride adduct maleic acid modified product
  • fumaric acid adduct fumaric acid-modified product
  • at least one selected from the group consisting of dehydrogenated products are preferable, and the dehydrogenated product includes those in which a part of the alicyclic ring is converted to an aromatic ring by dehydrogenation.
  • the content of abietic acid (including neoabietic acid which is an isomer of abietic acid, dihydroabietic acid which is a hydride of abietic acid, tetrahydroabietic acid, dehydrogenated product of abietic acid, etc.) is 0.5 to The content of 2.5% by mass, and further 0.15 to 1.5% by mass is preferable because the copper surface can be effectively protected.
  • the content ratio (mass ratio) of dodecylbenzenesulfonic acid and alicyclic resin acid is 4: 1 to 1: 4, particularly 3: 1 to 1 in that the polishing composition can be concentrated effectively. : 3 is preferable.
  • Alicyclic resin acids include salts of alicyclic resin acids.
  • alicyclic resin acid salt rosin alkali metal salt (particularly potassium salt), rosin ammonium salt, and rosin organic amine salt, also called rosin, are preferable.
  • rosin alkali metal salt particularly potassium salt
  • rosin ammonium salt rosin ammonium salt
  • rosin organic amine salt also called rosin
  • salts for example, these 2 or more types of mixtures can also be used.
  • an effect of suppressing the amount of dishing can be obtained by including an alicyclic fatty acid.
  • the mechanism for obtaining such an effect acts as a surface protective agent that forms a protective layer on the surface of the copper film by performing some chemical or physical action on the surface of the semiconductor integrated circuit copper film during polishing. It is thought that.
  • This surface protective layer is not so strong as to completely hinder the polishing of the copper film, and in the copper film on the semiconductor integrated circuit substrate, the polishing progresses at the convex portion where the pressing pressure of the polishing pad is large, and the pressing pressure is small. Polishing does not proceed in the concave portion of the wiring portion. Thereby, it is considered that a highly smooth polished surface property is realized.
  • the content of the alicyclic resin acid in the polishing composition is 0.1 to 5% by mass, further 0.3 to 3% by mass, 0.3% to 2% by mass, 0.3% to 1% by mass. It is preferable that it is mass%. If it is less than 0.01% by mass, it is considered that the protective action of the copper film surface is insufficient, and corrosion and dishing are likely to occur during polishing. On the other hand, if it exceeds 2% by mass, the polishing rate of copper may decrease.
  • the content ratio (mass ratio) of the complex-forming agent and the alicyclic resin acid is 50: 1 to 30: 1, particularly 45: 1 to 35: 1 in that the polishing rate can be improved. preferable.
  • the mechanism of the oxidizing agent plays a role of oxidizing a metal such as copper to form a metal ion or oxide. It is considered that the polishing proceeds when the copper ions generated by the reaction with the oxidizing agent and the complex forming agent form a complex.
  • a peroxide having an oxygen-oxygen bond that generates a radical by dissociation of an oxygen-oxygen bond by external energy such as heat or light is preferable because it exhibits a strong oxidizing power.
  • peroxide-based oxidizing agents include inorganic peroxides such as hydrogen peroxide, persulfates, peroxocarbonates, peroxosulfates, peroxophosphates, benzoyl peroxide, t-butylhydro Examples thereof include organic peroxides such as peroxide, cumene hydroperoxide, diisopropylbenzene hydroperoxide, performic acid and peracetic acid.
  • Preferred oxidizing agents are hydrogen peroxide, ammonium persulfate, or potassium persulfate.
  • these oxidizing agents it is more preferable to use ammonium salts, particularly ammonium persulfate, because a high polishing rate can be obtained for the copper film.
  • the preferred oxidizing agents are then hydrogen peroxide and potassium persulfate.
  • the content of the oxidizing agent in the polishing composition is preferably 0.1 to 5% by mass, particularly 0.5 to 3% by mass, and 0.5 to 1.5% by mass. If it is less than 0.1% by mass, the copper polishing rate may decrease. If it exceeds 5% by mass, corrosion or dishing of the copper surface tends to occur.
  • at least one oxidizing agent selected from ammonium persulfate, hydrogen peroxide, and potassium persulfate In particular, it is preferable to use ammonium persulfate.
  • the main liquid medium in the polishing composition of the present invention is water, and preferably consists of water alone or a mixture of water and a water-soluble solvent.
  • water it is preferable to use pure water which has been subjected to ion exchange and from which foreign substances have been removed.
  • water-soluble solvent water-soluble alcohols, water-soluble polyols, water-soluble esters, water-soluble ethers, and the like can be used.
  • the liquid medium in the polishing composition of the present invention is preferably water alone or a mixed solvent of water containing 80% by mass or more of water and a water-soluble organic solvent, and most preferably consists essentially of water.
  • the proportion of the liquid medium in the polishing composition of the present invention is preferably 90% by mass or more, particularly 95% by mass or more.
  • Substantially the total amount of the liquid medium is preferably composed of water.
  • the water content in the polishing composition of the present invention is preferably 90% by mass or more, particularly preferably 95% by mass or more.
  • the ratio of each component of the polishing composition of the present invention refers to the composition ratio when polishing is performed.
  • the polishing composition is diluted prior to polishing and the diluted solution is used for polishing, the ratio of each component described above and below is a ratio in the diluted product.
  • the polishing composition is usually diluted with a liquid medium (especially water), and in this case, the relative proportions of the components other than the liquid medium are usually not changed before and after the dilution.
  • the pH value of the polishing composition of the present invention is preferably 7.5 to 12, particularly 8 to 11, and more preferably 8.5 to 10.5. More preferably, it is 9-10.
  • the pH value is preferably 8.0 or more.
  • a pH value higher than 12 is not preferable because corrosion of the copper film is remarkable.
  • the pH value is preferably 11 or less.
  • a pH adjuster can be used.
  • potassium hydroxide, organic amine, or ammonia any of these may be used, but it is preferable to use an organic amine or ammonia that forms a complex ion with copper because a large polishing rate can be obtained with respect to the copper film.
  • the pH may be adjusted to a desired pH value by adjusting the pH to the acidic side by adding nitric acid, sulfuric acid, phosphoric acid, etc. once the basic pH is set to the desired pH value.
  • the order of the step of mixing the pH adjuster is not limited.
  • a liquid medium is used.
  • a liquid medium made basic by mixing with a pH adjuster (some or all of other components may already be contained) is prepared, dissolution and mixing of the alicyclic resin acid and the like are facilitated. It is preferable because it becomes difficult to separate.
  • the polishing composition of the present invention can exert its effect even when no abrasive grains are blended.
  • the abrasive composition may be blended and used, and in that case, copper can be further polished at a high speed.
  • Examples of abrasive grains that can be blended in the polishing composition of the present invention include ⁇ -alumina, ⁇ -alumina, ⁇ -alumina, silica, and ceria. However, among these, it is preferable to use silica. When silica is used, colloidal silica is more preferably used from the viewpoints of dispersibility, stability, polishing power, and the like.
  • the average secondary particle diameter is preferably 10 to 200 nm. If the average secondary particle diameter exceeds 200 nm, it is difficult to increase the concentration of the abrasive grains because the abrasive particle diameter is too large, and if it is less than 10 nm, it is difficult to improve the polishing rate.
  • the range of 20 to 120 nm is preferable.
  • the content of the abrasive grains in the polishing composition of the present invention is 0.01 to 10% by mass, particularly 0.05 to 5% by mass, further 0.05 to 2% by mass, 0.05 to 1% by mass, 0%. 0.05 to 0.6% by mass is preferable.
  • the polishing composition preferably contains a rust inhibitor.
  • the rust inhibitor is preferably an imidazole derivative, particularly in terms of preventing pits.
  • the imidazole derivative specifically refers to imidazole and benzene in which 1 to 5 positions shown in the following formula may be substituted with a methyl group, and the 4 and 5 positions may be benzene which may have a substituent.
  • the imidazole derivative examples include benzimidazole, imidazole, 1-methylimidazole, 2-methylimidazole, 4-methylimidazole, 1,2-dimethylimidazole, 2-ethylimidazole, and the like. These may be used alone or in combination of two or more.
  • the imidazole derivative is preferably contained in an amount of 0.001 to 0.5%, more preferably 0.003 to 0.3% based on the total mass of the polishing composition in terms of polishing characteristics.
  • a reducing agent, a viscosity modifier, a dispersing agent, a preservative, and the like can be appropriately blended in addition to the above-described components as long as the gist of the present invention is not violated.
  • these contents are generally 10% by mass or less, and particularly preferably 5% by mass or less and 3% by mass or less in total.
  • the polishing composition thus configured can suppress copper residue and pits when copper is used as a wiring metal, and can realize highly accurate surface flattening. Therefore, it is possible to obtain a semiconductor integrated circuit surface having an excellent flat surface state, which is extremely effective for multilayering and thinning of the semiconductor integrated circuit.
  • the polishing composition according to the present invention is suitable for polishing a copper film formed on a surface having a groove for wiring as an abrasive.
  • Other constituent components may be added to the polishing composition according to the present invention and used as an abrasive. More specifically, since the progress of dishing and erosion is effectively suppressed in the method of manufacturing a semiconductor integrated circuit device in which copper wiring is formed by the damascene method, a semiconductor integrated circuit surface having an excellent flat surface state is obtained. be able to.
  • the polishing composition according to the present invention essentially contains a dodecylbenzenesulfonic acid component, and is at least one selected from the group consisting of an alkenyl succinic acid component, a polyoxyethylene alkyl ether carboxylic acid component, and a polyoxyethylene alkyl ether phosphoric acid component. Contains two flatness improvers. In the pattern formation in which the copper layer provided on the insulating layer through the barrier layer is polished by the above composition to form the copper embedded wiring having a width of 100 ⁇ m and the insulating layer having a width of 100 ⁇ m alternately.
  • the amount of dishing when the copper is polished for 200 nm at the polishing rate of copper before the barrier layer is exposed Is 55 nm or less, particularly 45 nm or less.
  • Polishing conditions include variable conditions such as polishing speed and pressing pressure of the polishing pad, but there are no particular restrictions on these conditions.
  • the polishing rate is preferably 200 to 800 nm / min, and the pressing pressure of the polishing pad is preferably 4 psi (converted value is 27.6 kPa) or less.
  • the dishing amount is a depth represented by reference numeral 7 in FIG. 4B (or a depth represented by reference numeral 17 in FIG. 5), as will be described later.
  • the polishing composition according to the present invention is a polishing method for pattern formation in which a copper layer provided on an insulating layer via a barrier layer is polished to alternately form copper embedded wiring and insulating layers.
  • the second polishing step of polishing with the second polishing composition can be preferably used.
  • the present polishing method that selectively uses these two types of polishing compositions can realize an excellent flat surface with less dishing and erosion and good in-plane uniformity when copper is used as a wiring metal. For this reason, it is extremely effective for multilayering and thinning of semiconductor integrated circuits.
  • first polishing step and the second polishing step it is generally preferable to perform the second polishing step immediately after the first polishing step to complete the polishing, but the first polishing step and the second polishing step are performed as necessary.
  • other steps may be included before the first polishing step or after the second polishing step.
  • end time of the first polishing step and the start time and end time of the second polishing step which can be appropriately determined according to the actual situation of polishing, but usually, a barrier layer is interposed on the insulating layer.
  • the first polishing process is stopped and the process proceeds to the second polishing process, and when the predetermined surface flatness is obtained, the second polishing process is stopped. That is, the copper portion other than the copper wiring is removed in the first polishing step, the barrier layer is removed in the second polishing step, and in most cases, the insulating layer and, if necessary, a part of the copper are extremely used. By polishing slightly, a flat surface composed of an insulating layer and a copper layer is formed.
  • Examples 1 to 64 and 86 to 111 are examples, and examples 65 to 85 are comparative examples.
  • compositions of the polishing compositions in Examples 1 to 111 are as summarized in Tables 1 to 6. Content of each component was described by the mass% with respect to the whole polishing composition mixed. The pH value was measured with a pH meter pH81-11 manufactured by Yokogawa Electric Corporation. The average secondary particle size of colloidal silica was measured by a dynamic light scattering method using a Microtrac UPA-ST150 particle size analyzer manufactured by NIKKISO. The measurement sample was measured by diluting with pure water in an appropriate concentration range determined by the apparatus, which can obtain appropriate scattering and reflected light intensity for measurement.
  • the polishing composition for Example 1 was prepared by adding a predetermined amount of 2-pyridinecarboxylic acid, which is a complex-forming agent, to ion-exchanged water, and then adjusting the pH so that the pH was as described in Table 2. Potassium hydroxide as a regulator was added and stirred thoroughly. Further, with stirring, KR614 (produced by Arakawa Chemical Industries) as an alicyclic resin acid, dodecylbenzenesulfonic acid as a dissolution aid, alkenyl succinic acid as a flatness improving agent, and APS (ammonium persulfate) as an oxidizing agent. Then, colloidal silica as an abrasive was added to prepare. Other examples other than Example 1 were processed in the same manner as in Example 1 with the compositions as shown in Tables 1 to 6 to obtain polishing compositions.
  • 2-pyridinecarboxylic acid which is a complex-forming agent
  • PTAH Phenyl Trimethyl Ammonium Hydroxide 0.2 M methanol solution, manufactured by GL Sciences Inc.
  • the measurement was carried out after methyl esterification.
  • the column used was a capillary column packed with DEGS (Diethylene glycol succinate) with an inner diameter of 0.25 mm, a length of 25 m, and a film thickness of 0.25 ⁇ m.
  • the oven temperature was 180 ° C. and the sample injection amount was 4.0 ⁇ l. .
  • polishing characteristics of the polishing composition were evaluated by the following methods.
  • a blanket wafer and a patterned wafer were used as the objects to be polished.
  • an 8-inch wafer (000 CUR015 manufactured by Sematech Co., Ltd.) in which a 1500 nm thick copper film was formed on the Si substrate by wet plating was used for copper polishing rate evaluation.
  • An 8-inch wafer (trade name: 854CMP225) manufactured by Sematech was used as the wafer with a pattern.
  • a schematic cross section of the patterned wafer before polishing is shown in FIG.
  • This patterned wafer is a 25-nm-thick tantalum film formed by sputtering on an insulating layer 2 made of SiO 2 in which concave and convex portions in which embedded wirings formed on the Si substrate 1 are embedded are formed.
  • a wiring metal layer 4 made of a copper film having a predetermined film thickness formed by wet plating, and a wiring pattern having a wiring width of 100 ⁇ m to 180 nm. Is formed.
  • the film thickness of the copper film on the surface of the barrier layer 3 made of the tantalum film on the convex portion of the insulating layer 2 is the initial film thickness 8, and the copper film formed on the convex portion and the concave portion of the insulating layer 2
  • the step is the initial step 9.
  • the initial film thickness was 900 nm and the initial step was 350 nm.
  • polishing machine a fully automatic CMP apparatus MIRRA manufactured by APPLIED MATERIALS was used.
  • a polishing pad XYK-groove (manufactured by Nitta Haas) having a two-layer pad IC1400 was used, and conditioning was performed using MEC100-PH3.5L (manufactured by Mitsubishi Materials Corporation).
  • the polishing composition of Example 1 was supplied at a rate of 200 ml / min, the rotation speed of the polishing head (Head) and the polishing platen (Platen) was 123 rpm and 117 rpm, respectively, and the polishing pressure was Performed at 2 psi or 13.8 kPa.
  • the supply rate of the polishing composition was 200 ml / min, and the rotation speeds of the polishing head (Head) and the polishing platen (Platen) were 123 rpm and 117 rpm, respectively.
  • the polishing pressure is 1.5 psi for Examples 4 to 30, 33, 34, 47 to 49, 57 to 63, 90, 94, 95, 98 to 100, 102 to 109, or 10.4 kPa. Performed at 2 psi or 13.8 kPa.
  • the copper polishing rate using a blanket wafer was measured using a film thickness meter RS-75 (manufactured by KLA-Tencor). That is, for the copper blanket wafer, the film thickness before polishing and the film thickness after polishing for 1 minute were measured, and the copper polishing rate (nm / min) was obtained from the difference.
  • the polishing rate of Cu is preferably 700 nm or more.
  • Polishing of the wafer with a pattern used for polishing the polishing composition was performed while monitoring the polishing end point by an optical polishing end point detection method. That is, as the polishing progresses, the barrier layer made of tantalum begins to be exposed, and after the polishing is finished until the polishing end point at which the decrease in reflectivity almost stops and becomes constant, overpolishing is further performed for 30 seconds. At the polishing end point, a part of the copper film on the barrier layer was removed, and the excess copper film remaining in part was removed by overpolishing.
  • the polishing end point is the polishing time up to the point of time when the “barrier layer is exposed by removing a part of the copper film on the barrier layer” in the above-mentioned, and the over-polishing time is the subsequent polishing time.
  • Polishing time The total polishing time is the sum of the polishing end point and the over polishing time.
  • the dishing measurement was performed separately for the center chip and the edge chip.
  • the center chip is the chip at the center of the 20 mm square chips existing on the wafer, and the edge chip is the chip closest to the end of the 20 mm square chips present on the wafer. It is.
  • Each value of the center chip and the edge chip is preferably 50 nm or less, particularly preferably 30 nm or less.
  • the difference in dishing amount between the center chip and the edge chip is preferably 20 nm or less, particularly preferably 10 nm or less.
  • FIG. 4B Schematic cross-sectional view of the patterned wafer after polishing is shown in FIG.
  • the wiring metal layer 4 made of a copper film is completely polished, and the surface of the barrier layer 3 made of a tantalum film is exposed.
  • the surface of the barrier layer 3 on the convex portion of the insulating layer 2 is polished by the depth indicated by reference numeral 7.
  • the height of the surface step was defined as a dishing amount of 7.
  • FIG. 4C is a schematic cross-sectional view of an ideally polished patterned wafer, in which embedded wiring is formed without causing such a surface step.
  • Example 2 and Example 43 contain a specific flatness improver, so that it can be seen that dishing is greatly improved without deteriorating copper residue and pits.
  • Examples 82 to 84 it can be seen that although benzimidazole is contained, oleic acid is contained, and the copper residue and pits are deteriorated.
  • the present invention it is possible to solve the problem of dishing while improving the polishing rate of the copper wiring in the first polishing process, and to solve the problem of copper residue and pits on the copper wiring without deteriorating erosion.
  • a novel polishing composition for the polishing process is obtained.

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  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

La présente invention concerne une composition abrasive qui est utilisée lors de la formation de motifs lors de laquelle un câblage de cuivre enterré et des couches isolantes sont formés en alternance par le ponçage de chaque couche de cuivre formée sur la couche isolante à travers une couche barrière, en particulier dans un procédé selon lequel chaque couche de cuivre est poncée jusqu’à l’exposition de la couche barrière adjacente. La composition abrasive contient un constituant d’acide dodécylbenzène sulfonique, et au moins un agent d’amélioration de planarité choisie parmi le groupe constitué d’un constituant d’acide succinique d’alcényle, d’un constituant d’acide alkyle éther carboxylique de polyoxyéthylène et d’un constituant d’acide ester alkyle phosphorique de polyoxyéthylène.
PCT/JP2009/065103 2008-08-28 2009-08-28 Composition abrasive et procédé de fabrication de dispositif de circuit intégré à semi-conducteurs WO2010024404A1 (fr)

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Cited By (10)

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WO2016016791A1 (fr) 2014-07-28 2016-02-04 Idemitsu Kosan Co., Ltd (Ikc) Benzimidazolo[1,2-a] benzimidazoles 2,9-fonctionnalisé utilisés comme hôtes pour diodes électroluminescentes organiques (oled)
WO2016079667A1 (fr) 2014-11-17 2016-05-26 Idemitsu Kosan Co., Ltd. Dérivés d'indole pour des applications électroniques
EP3054498A1 (fr) 2015-02-06 2016-08-10 Idemitsu Kosan Co., Ltd. Bisimidazodiazocines
EP3053918A1 (fr) 2015-02-06 2016-08-10 Idemitsu Kosan Co., Ltd Benzimidazoles substitués par un 2-carbazole pour des applications électroniques
EP3070144A1 (fr) 2015-03-17 2016-09-21 Idemitsu Kosan Co., Ltd. Composés cycliques à sept chaînons
WO2016157113A1 (fr) 2015-03-31 2016-10-06 Idemitsu Kosan Co., Ltd. Benzimidazolo[1,2-a]benzimidazole portant des groupes aryl- ou hétéroarylnitrile pour diodes électroluminescentes organiques
WO2017056052A1 (fr) 2015-10-01 2017-04-06 Idemitsu Kosan Co., Ltd. Groupes benzimidazolo[1,2-a]benzimidazolyle, groupes carbazolyle, groupes benzofuranne ou groupes benzothiophène portant un composé benzimidazolo[1,2-a] benzimidazole pour diodes électroluminescentes organiques
WO2017056053A1 (fr) 2015-10-01 2017-04-06 Idemitsu Kosan Co., Ltd. Groupes benzimidazolo[1,2-a]benzimidazolyle, groupes carbazolyle, groupes benzofuranne ou groupes benzothiophène portant un composé benzimidazolo[1,2-a] benzimidazole pour diodes électroluminescentes organiques
WO2017056055A1 (fr) 2015-10-01 2017-04-06 Idemitsu Kosan Co., Ltd. Benzimidazolo[1,2-a]benzimidazole portant des groupes triazine pour diodes électroluminescentes organiques
WO2023189899A1 (fr) * 2022-04-01 2023-10-05 株式会社フジミインコーポレーテッド Composition de polissage

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WO2007072918A1 (fr) * 2005-12-21 2007-06-28 Asahi Glass Company, Limited Composition de polissage, procédé de polissage et procédé servant à former un circuit imprimé en cuivre pour un circuit intégré à semi-conducteurs
WO2007132933A1 (fr) * 2006-05-16 2007-11-22 Showa Denko K.K. Procédé de fabrication d'une composition polissante

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WO2007072918A1 (fr) * 2005-12-21 2007-06-28 Asahi Glass Company, Limited Composition de polissage, procédé de polissage et procédé servant à former un circuit imprimé en cuivre pour un circuit intégré à semi-conducteurs
WO2007132933A1 (fr) * 2006-05-16 2007-11-22 Showa Denko K.K. Procédé de fabrication d'une composition polissante

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016016791A1 (fr) 2014-07-28 2016-02-04 Idemitsu Kosan Co., Ltd (Ikc) Benzimidazolo[1,2-a] benzimidazoles 2,9-fonctionnalisé utilisés comme hôtes pour diodes électroluminescentes organiques (oled)
WO2016079667A1 (fr) 2014-11-17 2016-05-26 Idemitsu Kosan Co., Ltd. Dérivés d'indole pour des applications électroniques
EP3054498A1 (fr) 2015-02-06 2016-08-10 Idemitsu Kosan Co., Ltd. Bisimidazodiazocines
EP3053918A1 (fr) 2015-02-06 2016-08-10 Idemitsu Kosan Co., Ltd Benzimidazoles substitués par un 2-carbazole pour des applications électroniques
EP3070144A1 (fr) 2015-03-17 2016-09-21 Idemitsu Kosan Co., Ltd. Composés cycliques à sept chaînons
WO2016157113A1 (fr) 2015-03-31 2016-10-06 Idemitsu Kosan Co., Ltd. Benzimidazolo[1,2-a]benzimidazole portant des groupes aryl- ou hétéroarylnitrile pour diodes électroluminescentes organiques
WO2017056052A1 (fr) 2015-10-01 2017-04-06 Idemitsu Kosan Co., Ltd. Groupes benzimidazolo[1,2-a]benzimidazolyle, groupes carbazolyle, groupes benzofuranne ou groupes benzothiophène portant un composé benzimidazolo[1,2-a] benzimidazole pour diodes électroluminescentes organiques
WO2017056053A1 (fr) 2015-10-01 2017-04-06 Idemitsu Kosan Co., Ltd. Groupes benzimidazolo[1,2-a]benzimidazolyle, groupes carbazolyle, groupes benzofuranne ou groupes benzothiophène portant un composé benzimidazolo[1,2-a] benzimidazole pour diodes électroluminescentes organiques
WO2017056055A1 (fr) 2015-10-01 2017-04-06 Idemitsu Kosan Co., Ltd. Benzimidazolo[1,2-a]benzimidazole portant des groupes triazine pour diodes électroluminescentes organiques
WO2023189899A1 (fr) * 2022-04-01 2023-10-05 株式会社フジミインコーポレーテッド Composition de polissage

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