WO2010024034A1 - Cible de pulvérisation et pellicule mince d’oxyde semi-conducteur formée à partir de cette cible - Google Patents

Cible de pulvérisation et pellicule mince d’oxyde semi-conducteur formée à partir de cette cible Download PDF

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WO2010024034A1
WO2010024034A1 PCT/JP2009/061629 JP2009061629W WO2010024034A1 WO 2010024034 A1 WO2010024034 A1 WO 2010024034A1 JP 2009061629 W JP2009061629 W JP 2009061629W WO 2010024034 A1 WO2010024034 A1 WO 2010024034A1
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thin film
oxide semiconductor
semiconductor thin
sputtering
oxide
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一吉 井上
太 宇都野
恒太 寺井
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出光興産株式会社
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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Definitions

  • the present invention relates to a sintered body, a sputtering target, an oxide semiconductor thin film, and a thin film transistor.
  • Oxide semiconductor films made of several metal complex oxides have high mobility and visible light transmission, so that liquid crystal display devices, thin film electroluminescence display devices, electrophoretic display devices, powder transfer display devices A wide variety of applications such as switching elements and drive circuit elements are being studied.
  • the oxide semiconductor film made of indium oxide-gallium oxide-zinc oxide is most popular.
  • indium oxide-zinc oxide, tin oxide added with zinc oxide (ZTO), indium oxide-zinc oxide-tin oxide added with gallium oxide, and the like are known. Since these are different in ease of manufacture, price, characteristics, etc., they are used as appropriate according to their applications.
  • an oxide of In, Ga, and Zn (IGZO), or an oxide semiconductor film containing the oxide of In, Ga, and Zn as a main component has an advantage of higher mobility than an amorphous silicon film, and thus attracts attention.
  • a sputtering target used for forming an oxide semiconductor film composed of indium oxide-gallium oxide-zinc oxide is manufactured through steps of mixing raw material powder, calcining, pulverizing, granulating, molding, sintering and reducing. .
  • a multi-step process up to the reduction of the bulk resistance due to the reduction of the sputtering target has the disadvantage that the productivity is lowered and the cost is increased.
  • the conductivity after the reduction was at most about 90 S / cm (bulk specific resistance: 11 m ⁇ cm), and a sufficiently low resistance target could not be obtained.
  • the sputtering target composed of indium oxide-gallium oxide-zinc oxide has a high bulk resistance, and the compound represented by InGaO 3 (ZnO) m grows abnormally during DC sputtering, resulting in abnormal discharge or a film obtained. May be unstable or become a conductive film.
  • Patent Document 1 discloses a sputtering target in which an indium oxide-zinc oxide based oxide further contains a lanthanoid element. However, it has been difficult to form an oxide semiconductor having low carrier concentration and semiconductor characteristics using this sputtering target.
  • Patent Document 2 discloses an oxide semiconductor film containing indium oxide and a lanthanoid element.
  • Patent Document 3 discloses a substrate for an organic EL element containing indium oxide, zinc oxide, and a lanthanoid metal oxide. The blending amount of the lanthanoid metal oxide is 0.1 to less than 20 atomic% with respect to all metal atoms.
  • Patent document 4 discloses a sputtering target containing zinc oxide, indium oxide and a color unevenness preventing agent which is a compound having a lanthanum oxide type crystal structure belonging to the hexagonal system.
  • An object of this invention is to provide the low-resistance sputtering target without an abnormal discharge during sputtering.
  • An object of the present invention is to provide an oxide semiconductor thin film having a low carrier concentration and stable semiconductor characteristics.
  • the following sintered body, sputtering target, oxide semiconductor thin film and the like are provided.
  • the atomic ratio is 0.2 ⁇ In / (In + Zn) ⁇ 0.97, 0.03 ⁇ Zn / (In + Zn) ⁇ 0.8, and 0.2 ⁇ (Ln / (In + Zn + Ln) ⁇ Sintered body which is 0.5. 2.
  • the atomic ratio is 0.2 ⁇ In / (In + Zn) ⁇ 0.97, 0.03 ⁇ Zn / (In + Zn) ⁇
  • the oxide semiconductor thin film which is 0.8 and 0.2 ⁇ Ln / (In + Zn + Ln) ⁇ 0.5. 6). 6.
  • an oxide semiconductor thin film having a low carrier concentration and stable semiconductor characteristics can be provided.
  • FIG. 6 is a chart showing an X-ray diffraction pattern of a target obtained in Example 2.
  • 6 is a chart showing an X-ray diffraction pattern of a target obtained in Example 3.
  • 6 is a chart showing an X-ray diffraction pattern of a target obtained in Example 4.
  • 6 is a chart showing an X-ray diffraction pattern of a target obtained in Example 5.
  • 10 is a chart showing an X-ray diffraction pattern of a target obtained in Example 6.
  • 10 is a chart showing an X-ray diffraction pattern of a target obtained in Example 7.
  • 10 is a chart showing an X-ray diffraction pattern of a target obtained in Example 8.
  • 10 is a chart showing an X-ray diffraction pattern of a target obtained in Example 9.
  • 10 is a chart showing an X-ray diffraction pattern of a target obtained in Example 10.
  • FIG. 10 is a chart showing an X-ray diffraction pattern of a target obtained in Example 11.
  • FIG. 10 is a chart showing an X-ray diffraction pattern of a target obtained in Example 12.
  • 6 is a chart showing an X-ray diffraction pattern of a target obtained in Comparative Example 1.
  • the sintered body of the present invention includes a hexagonal layered compound represented by In 2 O 3 (ZnO) m (wherein m is an integer of 2 to 20), and InLnO 3 (Ln excludes Pr and Pm). A compound represented by a trivalent lanthanoid element).
  • This sintered body can be suitably used as a sputtering target.
  • the sintered body of the present invention may further contain In 2 O 3 .
  • the sintered body of the present invention contains zinc oxide as a hexagonal layered compound represented by In 2 O 3 (ZnO) m (wherein m is an integer of 2 to 20). This is because a hexagonal layered compound represented by In 2 O 3 (ZnO) m (where m is an integer of 2 to 20) and InGaO 3 (ZnO) m (where m is an integer of 1 to 20). This is because the bulk resistance generally increases when an insulating oxide such as Ga is contained when comparing the bulk resistance of the hexagonal layered compounds represented by the formula (1).
  • the hexagonal layered compound is L. Dupont et al., Journal of Solid State Chemistry 158, 119-133 (2001), Toshihiro Moriga et al., J. Am. Ceram. Soc., 81 (5) 1310. -16 (1998).
  • the m of In 2 O 3 (ZnO) m that is a hexagonal layered compound contained in the sintered body of the present invention is preferably 3 to 7.
  • the sintered body of the present invention contains an oxide of a lanthanoid element as a compound represented by InLnO 3 (wherein Ln is a trivalent lanthanoid element excluding Pr and Pm).
  • Ln is a trivalent lanthanoid element excluding Pr and Pm.
  • the sintered body contains an oxide of a lanthanoid element as InLnO 3 , there is no insulating Ln 2 O 3 , and as a result, abnormal discharge can be reduced and stable film formation becomes possible.
  • lanthanoid elements have a strong binding force with oxygen and do not generate oxygen vacancies, a thin film having a specific resistance suitable for semiconductor applications can be obtained during film formation.
  • Ln 2 O 3 is doped into indium oxide (In 2 O 3 ), and there is no insulating Ln 2 O 3 , resulting Stable sputtering becomes possible.
  • the crystal particles in the sintered body are refined to a size of, for example, a particle size of 5 ⁇ m, preferably less than 3 ⁇ m.
  • Ln is a trivalent lanthanoid element excluding Pr and Pm, that is, La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.
  • a thin film obtained from a sintered body containing Pr and Pm may have radioactivity.
  • InLnO 3, InLaO 3, InNdO 3 , InSmO 3, InEuO 3, InGdO 3, InTbO 3, InDyO 3, InHoO 3, InErO 3, InTmO 3, InYbO 3, InLuO 3 and the like to handle Since it is easy, InSmO 3 , InGdO 3 , InDyO 3 , InErO 3 , InYbO 3 or the like is preferably used.
  • the atomic ratio of indium, zinc and lanthanoid elements is 0.2 ⁇ In / (In + Zn) ⁇ 0.97 0.03 ⁇ Zn / (In + Zn) ⁇ 0.8, and 0.2 ⁇ Ln / (In + Zn + Ln) ⁇ 0.5, Preferably 0.25 ⁇ In / (In + Zn) ⁇ 0.95, 0.05 ⁇ Zn / (In + Zn) ⁇ 0.75, and 0.2 ⁇ Ln / (In + Zn + Ln) ⁇ 0.45, More preferably, 0.25 ⁇ In / (In + Zn) ⁇ 0.9, 0.1 ⁇ Zn / (In + Zn) ⁇ 0.75, and 0.2 ⁇ Ln / (In + Zn + Ln) ⁇ 0.4.
  • the atomic ratio can be obtained by ICP emission analysis.
  • the resulting thin film may become conductive or the durability of the thin film may be poor. Further, when the atomic ratio In / (In + Zn) is 0.97 or more, the obtained thin film may become conductive or the thin film may be crystallized.
  • the resulting thin film may become conductive or the thin film may crystallize. Moreover, when Zn / (In + Zn) is 0.8 or more, the obtained thin film may become conductive, or the durability of the thin film may be poor.
  • the resulting thin film may become conductive. Further, when the atomic ratio Ln / (In + Zn + Ln) is 0.5 or more, the obtained thin film has almost no carriers and becomes an insulating film, which may not function as a semiconductor.
  • the sintered body of the present invention preferably has an In content [In / (total metal cation): atomic ratio] to the total cation metal element, and an Ln content [Ln / (total metal cation) to the total metal cation element]. : Atomic ratio]. That is, the sintered body preferably satisfies the following formula. In / (all metal cations)> Ln / (all metal cations)
  • the lanthanoid oxide (Ln 2 O 3 ) in the sintered body becomes InLnO 3 and the conductivity of the sintered body can be improved. Thereby, the bulk resistance of a sintered compact can be reduced and stable sputtering becomes possible.
  • Ln 2 O 3 in the sintered body does not become InLnO 3 but exists in the form of insulating Ln 2 O 3 , which may cause abnormal discharge during sputtering. is there.
  • the sintered body of the present invention preferably has a bulk resistance of less than 5 m ⁇ cm, more preferably 3 m ⁇ cm or less, and even more preferably 1 m ⁇ cm or less.
  • a bulk resistance of the sintered body is 5 m ⁇ cm or more, abnormal discharge or foreign matter (nodules) may occur during sputtering.
  • a hexagonal layered compound represented by In 2 O 3 (ZnO) m (wherein m is an integer of 2 to 20), a compound represented by InLnO 3 , and in some cases, InLnO 3 (ZnO) m You may contain as a hexagonal layered compound represented.
  • the highly insulating Ln 2 O 3 causes abnormal discharge, which causes foreign matter in the deposited film. May occur, or the surface accuracy of the thin film may be reduced.
  • the sintered body of the present invention is a hexagonal layered compound represented by In 2 O 3 (ZnO) m (wherein m is an integer of 2 to 20), InLnO 3 (Ln excludes Pr and Pm 3 A valent lanthanoid element), and optionally In 2 O 3 , or only these compounds.
  • “Substantially” means that the sintered body of the present invention is a hexagonal layered compound represented by In 2 O 3 (ZnO) m (wherein m is an integer of 2 to 20), InLnO 3 ( Ln consists of a compound represented by a trivalent lanthanoid element excluding Pr and Pm), and optionally In 2 O 3 , and may further contain the following components.
  • the sintered body of the present invention may contain a positive tetravalent metal oxide as a trace impurity.
  • the positive tetravalent metal oxide does not generate carriers due to doping in indium oxide, and can facilitate carrier control of the oxide semiconductor thin film.
  • the positive tetravalent metal oxide is preferably CeO 2 , GeO 2 , ZrO 2 , SnO 2 , TiO 2 or the like, and more preferably CeO 2 , GeO from the viewpoint of the stability of the obtained oxide semiconductor thin film. 2 and ZrO 2 .
  • the content of the positive tetravalent metal oxide is, for example, 50 to 3000 ppm, preferably 100 to 2000 ppm, more preferably 200 to 1000 ppm. If the content of the positive tetravalent metal oxide is less than 50 ppm, the effect obtained by addition may be small. On the other hand, if the content of the positive tetravalent metal oxide exceeds 3000 ppm, it becomes difficult to control the carrier of the obtained thin film, the thin film becomes conductive, and the off-current value, which is a semiconductor characteristic, increases. The thin film may not be stable.
  • indium oxide (In 2 O 3 ), zinc oxide (ZnO) and lanthanoid oxide (Ln 2 O 3 ) powders are mixed, and the mixture is pulverized and sintered.
  • the specific surface area of the indium oxide powder is preferably 8 to 10 m 2 / g
  • the specific surface area of the zinc oxide powder is 2 to 4 m 2 / g
  • the specific surface area of the lanthanide oxide is preferably 5 to 15 m 2 / g.
  • the median diameter of the indium oxide powder is preferably 1 to 2 ⁇ m
  • the median diameter of the zinc oxide powder is 0.8 to 1.6 ⁇ m
  • the median diameter of the lanthanide oxide is preferably 1 to 2 ⁇ m.
  • the mixing ratio of indium oxide powder, zinc oxide powder, and lanthanoid oxide powder is prepared so that the atomic ratio of each element becomes the above-mentioned preferable atomic ratio. That's fine.
  • the mixed powder containing indium oxide powder, zinc oxide powder, and lanthanoid oxide powder is used, other components that improve the characteristics of the sintered body may be added.
  • the mixed powder is mixed and ground using, for example, a wet medium stirring mill. At this time, pulverization is performed so that the specific surface area after pulverization is 1.5 to 2.5 m 2 / g higher than the specific surface area of the raw material mixed powder, or the average median diameter after pulverization is 0.6 to 1 ⁇ m. It is preferable to do.
  • the raw material powder thus adjusted, it is possible to obtain an oxide sintered body having a high density (for example, a relative density of 95% or more) without requiring any calcination process, and no reduction process is required. Can be.
  • the increase in the specific surface area of the raw material mixed powder is less than 1.5 m 2 / g or the average median diameter of the raw material mixed powder after pulverization exceeds 1 ⁇ m, the sintered density may not be sufficiently increased.
  • the increase in the specific surface area of the raw material mixed powder exceeds 2.5 m 2 / g, or if the average median diameter after pulverization is less than 0.6 ⁇ m, contamination from the pulverizer during pulverization (impurity contamination amount) ) May increase.
  • each powder can be measured by the BET method.
  • the median diameter of the particle size distribution of each powder can be measured with a particle size distribution meter. These values can be adjusted by pulverizing the powder by a dry pulverization method, a wet pulverization method or the like.
  • the raw material after the pulverization process is dried with a spray dryer or the like and then molded.
  • a known method such as pressure forming or cold isostatic pressing can be employed.
  • the obtained molded body is sintered to obtain a sintered body.
  • Sintering is preferably performed at 1350 to 1450 ° C. for 2 to 20 hours. When the temperature is lower than 1350 ° C., the density is not improved. When the temperature exceeds 1450 ° C., zinc is evaporated, the composition of the sintered body is changed, or voids (voids) are generated in the sintered body due to the evaporation. There is.
  • Sintering is preferably performed in an oxygen atmosphere by circulating oxygen or under pressure. Thereby, transpiration of zinc can be suppressed, and a sintered body free from voids (voids) can be obtained.
  • the obtained sintered body can be used as a sputtering target by performing processing such as polishing.
  • the sintered body is ground by, for example, a surface grinder so that the surface roughness Ra is 5 ⁇ m or less.
  • the sputter surface of the target may be mirror-finished so that the average surface roughness Ra is 1000 angstroms or less.
  • a known polishing technique such as mechanical polishing, chemical polishing, mechanochemical polishing (a combination of mechanical polishing and chemical polishing) can be used.
  • polishing to # 2000 or more with a fixed abrasive polisher polishing liquid: water
  • lapping with loose abrasive lapping abrasive: SiC paste, etc.
  • lapping by changing the abrasive to diamond paste can be obtained by:
  • Such a polishing method is not particularly limited.
  • the obtained sputtering target By bonding the obtained sputtering target to a backing plate, it can be used by being mounted on various devices.
  • the physical film forming method include a sputtering method, a PLD (pulse laser deposition) method, a vacuum deposition method, and an ion plating method.
  • cleaning, etc. can be used for the cleaning process of a sputtering target.
  • cleaning, etc. can be used for the cleaning process of a sputtering target.
  • cleaning, etc. can be used for the cleaning process of a sputtering target.
  • ultrasonic cleaning and the like can also be performed.
  • a method of performing multiple oscillation at a frequency of 25 to 300 KHz is effective.
  • it is preferable to perform ultrasonic cleaning by multiplying twelve types of frequencies in 25 KHz increments between frequencies of 25 to 300 KHz.
  • the oxide semiconductor thin film of the present invention contains In, Zn, and Ln (Ln is a trivalent lanthanoid element excluding Pr and Pm), and the atomic ratio thereof is 0.2 ⁇ In / (In + Zn) ⁇ 0.97 0.03 ⁇ Zn / (In + Zn) ⁇ 0.8, and 0.2 ⁇ Ln / (In + Zn + Ln) ⁇ 0.5, Preferably 0.25 ⁇ In / (In + Zn) ⁇ 0.95, 0.05 ⁇ Zn / (In + Zn) ⁇ 0.75, and 0.2 ⁇ Ln / (In + Zn + Ln) ⁇ 0.45, More preferably, 0.25 ⁇ In / (In + Zn) ⁇ 0.9, 0.1 ⁇ Zn / (In + Zn) ⁇ 0.75, and 0.2 ⁇ Ln / (In + Zn + Ln) ⁇ 0.4.
  • the oxide semiconductor thin film of the present invention has a low carrier concentration and stable semiconductor characteristics.
  • the thin film may become conductive or the durability of the thin film may be poor. Further, when the atomic ratio In / (In + Zn) is 0.97 or more, the thin film may become conductive or the thin film may be crystallized.
  • the thin film When the atomic ratio Zn / (In + Zn) is 0.03 or less, the thin film may become conductive or the thin film may crystallize. Moreover, when Zn / (In + Zn) is 0.8 or more, the thin film may become conductive or the durability of the thin film may be poor.
  • the thin film may become conductive.
  • the atomic ratio Ln / (In + Zn + Ln) is 0.5 or more, the thin film has almost no carriers and becomes an insulating film, which may not function as a semiconductor.
  • the carrier density of the oxide semiconductor thin film of the present invention is preferably less than 10 18 / cm 3 , more preferably 10 15 / cm 3 or more and less than 10 18 / cm 3 , and even more preferably 10 15 / cm 3. This is less than 5 ⁇ 10 17 / cm 3 .
  • the lower limit of the carrier density of the oxide semiconductor thin film is not particularly limited, but is, for example, 10 12 / cm 3 or more.
  • the carrier concentration of the oxide semiconductor thin film can be achieved by setting the composition ratio of the present invention.
  • the oxide semiconductor thin film can sufficiently function as a semiconductor.
  • the carrier density can be adjusted, for example, by an oxygen partial pressure at the time of forming an oxide semiconductor thin film described later.
  • the semiconductor characteristics of the oxide semiconductor thin film of the present invention are preferably On / Off value> 10 6 , field-effect mobility> 2 cm 2 / V ⁇ sec, threshold voltage (Vth) ⁇ 10 V, and S value ⁇ 5. If these conditions are satisfied, the oxide semiconductor thin film can sufficiently function as a driving thin film transistor for liquid crystal display, a driving thin film transistor for organic EL, or the like.
  • the oxide semiconductor thin film of the present invention can be formed by sputtering the sputtering target of the present invention at a sputtering pressure of 0.1 to 2 Pa and an oxygen partial pressure of 2 to 20% of the sputtering pressure.
  • the sputtering pressure is 0.1 to 2 Pa, preferably 0.2 to 1 Pa.
  • the sputtering pressure is less than 0.1 Pa, the film formation is performed at a high vacuum, and the sputtering rate may decrease, or the cost may increase due to the high vacuum.
  • the sputtering pressure exceeds 2 Pa, the sputtering plasma may not be stable, and the sputtering rate may decrease, or the film quality of the resulting thin film may decrease.
  • the oxygen partial pressure is 2 to 20%, preferably 3 to 10%, more preferably 4 to 8% of the sputtering pressure. Since oxygen controls oxygen vacancies in the resulting thin film, it is necessary to strictly control the oxygen partial pressure during sputtering as described above. When the oxygen partial pressure is less than 2% of the sputtering pressure, the resulting thin film may become a conductive thin film, or the off-current that is a semiconductor characteristic may increase. Further, when the oxygen partial pressure exceeds 20% of the sputtering pressure, the thin film takes in a large amount of oxygen, and there is a possibility that the field effect mobility, which is a semiconductor characteristic, is lowered.
  • the oxygen partial pressure is not particularly limited as long as it is 2 to 20% of the sputtering pressure, but the optimum oxygen partial pressure varies depending on the content of the lanthanoid element in the sputtering target.
  • Lanthanoid elements trivalent lanthanoid elements excluding Pr and Pm usually have an effect of facilitating incorporation of oxygen into the thin film during film formation and reducing the amount of oxygen vacancies in the thin film. Therefore, when the target lanthanoid element content is low, the oxygen partial pressure during sputtering is increased, and when the lanthanoid element content is high, the oxygen partial pressure during sputtering is preferably decreased.
  • the sputtering is preferably performed in an atmosphere where the partial pressure of water and the partial pressure of oxygen satisfy 10 ⁇ (oxygen partial pressure / water partial pressure) ⁇ 200.
  • the above formula is more preferably 15 ⁇ (oxygen partial pressure / water partial pressure) ⁇ 150, and more preferably 20 ⁇ (oxygen partial pressure / water partial pressure) ⁇ 100.
  • the oxygen partial pressure / water partial pressure When the oxygen partial pressure / water partial pressure is 10 or less, durability of the resulting oxide semiconductor thin film may be reduced, off-current may be increased, or field-effect mobility may be reduced. On the other hand, when the oxygen partial pressure / water partial pressure is 200 or more, the cost of exhausting water molecules is high, and thus productivity may be reduced.
  • FIG. 1 is a schematic cross-sectional view showing an embodiment of the thin film transistor of the present invention.
  • the thin film transistor 1 is a channel etch type thin film transistor.
  • the gate electrode 20 is sandwiched between the substrate 10 and the insulating film 30, and the oxide semiconductor thin film 40 of the present invention is stacked on the gate insulating film 30 as an active layer.
  • a source electrode 50 and a drain electrode 52 are provided so as to cover the vicinity of the end of the oxide semiconductor thin film 40.
  • a channel portion 60 is formed in a portion surrounded by the oxide semiconductor thin film 40, the source electrode 50 and the drain electrode 52.
  • FIG. 2 is a schematic cross-sectional view showing another embodiment of the thin film transistor of the present invention.
  • the thin film transistor 2 is an etch stopper type thin film transistor.
  • the thin film transistor 2 has the same configuration as the thin film transistor 1 described above except that an etch stopper 70 is formed so as to cover the channel portion 60.
  • a source electrode 50 and a drain electrode 52 are provided so as to cover the vicinity of the end of the oxide semiconductor thin film 40 and the vicinity of the end of the etch stopper 70.
  • the thin film transistor of the present invention is not limited to a channel etch type or etch stopper type transistor, and an element configuration known in this technical field can be adopted.
  • Example 1 Manufacture of sputtering target
  • the obtained mixed powder was dried with a spray dryer, filled in a mold, and press-molded.
  • the obtained molded body was sintered in an oxygen atmosphere at 1420 ° C. for 20 hours to obtain a sintered body, and further cut to obtain a sputtering target. It was confirmed that the relative density of the target obtained (the value obtained by dividing the density of the mixed oxide by weight and divided by the actually measured density) was 95% or more.
  • the measured density was calculated from the weight and outer dimensions of the target cut into a certain size.
  • the bulk resistance of the target was measured by a four-probe method using a resistivity meter (Mitsubishi Oil Chemical Co., Ltd., Loresta), and as a result, it was confirmed to be 0.7 m ⁇ cm.
  • FIG. 1 is an X-ray diffraction chart of the target. From this figure, it was confirmed that hexagonal layered compounds represented by InSmO 3 and In 2 O 3 (ZnO) 3 were generated in the target.
  • the manufactured sputtering target was attached to a DC magnetron sputtering apparatus and sputtered to form an oxide semiconductor thin film having a thickness of 50 nm on a glass substrate. Abnormal discharge was not confirmed during sputtering.
  • the formed thin film was stabilized by heat treatment at 300 ° C. for 1 hour in air.
  • the crystallinity of the obtained oxide semiconductor thin film was observed by X-ray diffraction, no peak was observed, and it was confirmed to be amorphous.
  • the carrier density of the thin film was measured by Hall measurement (manufactured by Toyo Technica Co., Ltd .: REISTEST 8300). As a result, the carrier density was 3 ⁇ 10 17 / cm 3 .
  • An oxide semiconductor thin film with a thickness of 50 nm is formed in the same manner on a thermal oxide film of a hard-doped Si substrate with a 300 nm thick thermal oxide film, and has a channel length of 200 ⁇ m and a channel width of 500 ⁇ m with gold electrodes.
  • a thin film transistor element was produced.
  • InYbO 3 and In 2 O 3 (ZnO) 3 hexagonal layered compounds represented by InYbO 3 and In 2 O 3 (ZnO) 3 were generated in the obtained target (FIG.
  • InYbO 3 and In 2 O 3 (ZnO) 3 hexagonal layered compounds represented by InYbO 3 and In 2 O 3 (ZnO) 3 were generated in the obtained target (FIG.
  • InYbO 3 and In 2 O 3 (ZnO) 3 hexagonal layered compounds represented by InYbO 3 and In 2 O 3 (ZnO) 3 were generated in the obtained target (FIG.
  • InYbO 3 and In 2 O 3 (ZnO) 3 hexagonal layered compounds represented by InYbO 3 and In 2 O 3 (ZnO) 3 were generated in the obtained target (FIG.
  • InGdO 3 and In 2 O 3 (ZnO) 3 hexagonal layered compounds represented by InGdO 3 and In 2 O 3 (ZnO) 3 were generated in the obtained target (FIG.
  • InDyO 3 and In 2 O 3 (ZnO) 3 hexagonal layered compounds represented by InDyO 3 and In 2 O 3 (ZnO) 3 were generated in the obtained target (FIG.
  • InErO 3 and In 2 O 3 (ZnO) 3 was generated in the obtained target (FIG.
  • InLaO 3 and In 2 O 3 (ZnO) 3 hexagonal layered compounds represented by InLaO 3 and In 2 O 3 (ZnO) 3 were generated in the obtained target (FIG.
  • the target of the present invention is a transparent conductive film for various uses, such as a transparent conductive film for a liquid crystal display (LCD), a transparent conductive film for an electroluminescence (EL) display element, a transparent conductive film for a solar cell, and an oxide semiconductor thin film. It is suitable as a target for obtaining by a sputtering method.
  • a transparent conductive film for a liquid crystal display (LCD) a transparent conductive film for an electroluminescence (EL) display element
  • a transparent conductive film for a solar cell and an oxide semiconductor thin film.
  • an electrode of an organic EL element, a transparent conductive film for a semi-transmissive / semi-reflective LCD, an oxide semiconductor film for driving a liquid crystal, and an oxide semiconductor thin film for driving an organic EL element can be obtained.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Film Transistor (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

L’invention concerne un corps fritté contenant un composé lamellaire hexagonal exprimé comme In2O3(ZnO)m (où m représente un entier compris entre 2 et 20) et un composé exprimé comme InLnO3 (où Ln représente un lanthanide trivalent à l’exclusion de Pr et Pm) à des rapports atomiques de 0,2 < In/(In + Zn) < 0,97, 0,03 < Zn/(In + Zn) < 0,8 et 0,2 < Ln/(In + Zn + Ln) < 0,5.
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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8038911B2 (en) * 2006-08-10 2011-10-18 Idemitsu Kosan Co., Ltd. Lanthanoid-containing oxide target
JP2011222557A (ja) * 2010-04-02 2011-11-04 Idemitsu Kosan Co Ltd 酸化物半導体の成膜方法
WO2012102181A1 (fr) * 2011-01-27 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Dispositif à semi-conducteurs
JP2013004555A (ja) * 2011-06-13 2013-01-07 Idemitsu Kosan Co Ltd 薄膜トランジスタ
JP2013084735A (ja) * 2011-10-07 2013-05-09 Semiconductor Energy Lab Co Ltd 酸化物半導体膜及び半導体装置
WO2013141197A1 (fr) * 2012-03-23 2013-09-26 独立行政法人科学技術振興機構 Transistor à film mince et procédé de fabrication d'un transistor à film mince
US9196690B2 (en) 2011-03-25 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
KR20150142397A (ko) * 2014-06-12 2015-12-22 인하대학교 산학협력단 박막 트랜지스터, 그 제조 방법 및 이를 포함하는 디스플레이 장치
JP2016076623A (ja) * 2014-10-07 2016-05-12 株式会社Ｊｏｌｅｄ 薄膜トランジスタの製造方法
KR101808200B1 (ko) 2010-09-13 2017-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP2018029186A (ja) * 2012-07-19 2018-02-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2022518522A (ja) * 2019-09-18 2022-03-15 華南理工大学 複合金属酸化物半導体および薄膜トランジスタとその応用

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014175503A (ja) 2013-03-08 2014-09-22 Kobe Steel Ltd 薄膜トランジスタの半導体層用酸化物、薄膜トランジスタおよび表示装置
WO2015098060A1 (fr) * 2013-12-27 2015-07-02 出光興産株式会社 Corps fritté en oxyde, son procédé de production et cible de pulvérisation cathodique

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06234565A (ja) * 1992-12-15 1994-08-23 Idemitsu Kosan Co Ltd ターゲットおよびその製造方法
JP2003040696A (ja) * 2001-07-27 2003-02-13 National Institute For Materials Science 酸化亜鉛基層状化合物を内包した構造を持つ酸化亜鉛材料
JP2004068054A (ja) * 2002-08-02 2004-03-04 Idemitsu Kosan Co Ltd スパッタリングターゲット及び焼結体それらを利用して製造した導電膜。
WO2008018403A1 (fr) * 2006-08-10 2008-02-14 Idemitsu Kosan Co., Ltd. Cible d'oxyde contenant du lanthanide
JP2008144246A (ja) * 2006-12-13 2008-06-26 Idemitsu Kosan Co Ltd スパッタリングターゲットの製造方法
WO2008096768A1 (fr) * 2007-02-09 2008-08-14 Idemitsu Kosan Co., Ltd. Procédé de fabrication de transistor à film mince, transistor à film mince, substrat de transistor à film mince et appareil d'affichage d'image, appareil d'affichage d'image et dispositif semi-conducteur

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06234565A (ja) * 1992-12-15 1994-08-23 Idemitsu Kosan Co Ltd ターゲットおよびその製造方法
JP2003040696A (ja) * 2001-07-27 2003-02-13 National Institute For Materials Science 酸化亜鉛基層状化合物を内包した構造を持つ酸化亜鉛材料
JP2004068054A (ja) * 2002-08-02 2004-03-04 Idemitsu Kosan Co Ltd スパッタリングターゲット及び焼結体それらを利用して製造した導電膜。
WO2008018403A1 (fr) * 2006-08-10 2008-02-14 Idemitsu Kosan Co., Ltd. Cible d'oxyde contenant du lanthanide
JP2008144246A (ja) * 2006-12-13 2008-06-26 Idemitsu Kosan Co Ltd スパッタリングターゲットの製造方法
WO2008096768A1 (fr) * 2007-02-09 2008-08-14 Idemitsu Kosan Co., Ltd. Procédé de fabrication de transistor à film mince, transistor à film mince, substrat de transistor à film mince et appareil d'affichage d'image, appareil d'affichage d'image et dispositif semi-conducteur

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8038911B2 (en) * 2006-08-10 2011-10-18 Idemitsu Kosan Co., Ltd. Lanthanoid-containing oxide target
JP2011222557A (ja) * 2010-04-02 2011-11-04 Idemitsu Kosan Co Ltd 酸化物半導体の成膜方法
US10586869B2 (en) 2010-09-13 2020-03-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101808200B1 (ko) 2010-09-13 2017-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US9082864B2 (en) 2011-01-27 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012102181A1 (fr) * 2011-01-27 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Dispositif à semi-conducteurs
US8890150B2 (en) 2011-01-27 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9196690B2 (en) 2011-03-25 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
JP2013004555A (ja) * 2011-06-13 2013-01-07 Idemitsu Kosan Co Ltd 薄膜トランジスタ
JP2013084735A (ja) * 2011-10-07 2013-05-09 Semiconductor Energy Lab Co Ltd 酸化物半導体膜及び半導体装置
JPWO2013141197A1 (ja) * 2012-03-23 2015-08-03 独立行政法人科学技術振興機構 薄膜トランジスタ及び薄膜トランジスタの製造方法
WO2013141197A1 (fr) * 2012-03-23 2013-09-26 独立行政法人科学技術振興機構 Transistor à film mince et procédé de fabrication d'un transistor à film mince
US10847657B2 (en) 2012-03-23 2020-11-24 Japan Science And Technology Agency Method for manufacturing thin film transistor with oxide semiconductor channel
US9536993B2 (en) 2012-03-23 2017-01-03 Japan Science And Technology Agency Thin film transistor and method for manufacturing thin film transistor
JP2018029186A (ja) * 2012-07-19 2018-02-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101657345B1 (ko) 2014-06-12 2016-09-30 인하대학교 산학협력단 박막 트랜지스터, 그 제조 방법 및 이를 포함하는 디스플레이 장치
KR20150142397A (ko) * 2014-06-12 2015-12-22 인하대학교 산학협력단 박막 트랜지스터, 그 제조 방법 및 이를 포함하는 디스플레이 장치
JP2016076623A (ja) * 2014-10-07 2016-05-12 株式会社Ｊｏｌｅｄ 薄膜トランジスタの製造方法
JP2022518522A (ja) * 2019-09-18 2022-03-15 華南理工大学 複合金属酸化物半導体および薄膜トランジスタとその応用
JP7424659B2 (ja) 2019-09-18 2024-01-30 華南理工大学 複合金属酸化物半導体および薄膜トランジスタとその応用

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