WO2010017790A1 - Composant semi-conducteur optoélectronique, montable en surface - Google Patents

Composant semi-conducteur optoélectronique, montable en surface Download PDF

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Publication number
WO2010017790A1
WO2010017790A1 PCT/DE2009/000884 DE2009000884W WO2010017790A1 WO 2010017790 A1 WO2010017790 A1 WO 2010017790A1 DE 2009000884 W DE2009000884 W DE 2009000884W WO 2010017790 A1 WO2010017790 A1 WO 2010017790A1
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WO
WIPO (PCT)
Prior art keywords
housing base
semiconductor
shielding body
semiconductor chip
shielding
Prior art date
Application number
PCT/DE2009/000884
Other languages
German (de)
English (en)
Inventor
Michael Zitzlsperger
Walter Wegleiter
Jürgen Moosburger
Bernd Barchmann
Magnus Ahlstedt
Thomas Zeiler
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2010017790A1 publication Critical patent/WO2010017790A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body

Definitions

  • a surface-mountable, optoelectronic semiconductor component is specified.
  • Optoelectronic components such as LEDs, light-emitting diodes or laser diodes have found a wide technical application. Some aspects that have contributed to the dissemination of such components, such as their high efficiency and resistance to external loads and environmental factors. For example, optoelectronic components can withstand moisture and heat well and are resistant to mechanical stresses even with a suitable design. In addition to high efficiency, optoelectronic components also have a long service life, a compact design and a variety of design options and can also be produced at comparatively low production costs.
  • An object to be solved is to provide an optoelectronic component whose house has a high heat dissipation capability.
  • the optoelectronic semiconductor component it is surface mountable.
  • the semiconductor component can be applied to an external carrier without parts of the semiconductor component having the carrier or its Penetrate boundary surfaces.
  • the semiconductor component can be applied by means of surface mount technology, SMT for short, to a carrier not belonging to the semiconductor component, for example a printed circuit board.
  • the latter has a mounting surface on a component underside.
  • the component underside is that side of the semiconductor component which has an external carrier, which does not belong to the semiconductor component, on which the
  • the mounting surface is at least a part of the component underside.
  • the mounting surface is at least partially formed by boundary surfaces of the semiconductor device, which may be mounted directly on an external support.
  • “Directly attached” may mean here that the relevant parts of the mounting surfaces are connected to the external carrier via a connection means, such as a metallic solder or an adhesive, and, in addition to the connection means, no further components between the external carrier and the semiconductor component
  • the connection may be mechanical and / or electrical.
  • this has a housing base body.
  • the housing base is preferably designed in one piece. It is possible that the housing base body is produced by means of a spraying, casting or pressing method.
  • the basic housing is mechanically self-supporting.
  • the housing base body has a recess.
  • the recess is surrounded all around by the housing body.
  • the recess can completely penetrate the housing base body.
  • an opening is formed both on a housing base surface of the housing base body as well as on one of the housing base opposite housing cover surface through the recess.
  • this comprises at least two electrical connection pieces.
  • the electrical connection pieces are formed with an electrically conductive material, in particular a metal or a metal alloy.
  • the electrical connection pieces form at least part of the mounting surface.
  • the mounting surface forming parts of the fittings are preferably designed planar.
  • the mounting surface is formed partly by the housing base body and partly by the electrical connection pieces. It is possible that the housing base surface and a connector underside substantially, ie in the context of manufacturing tolerances, lie in one plane and together represent the mounting surface. A direct application of the semiconductor device on an external, not belonging to the semiconductor device carrier takes place, for example, only via soldering on the connectors.
  • the connecting pieces do not protrude laterally beyond the housing base body. That is, at any point of the semiconductor device the connecting pieces protrude in a lateral direction beyond the housing base body.
  • "In lateral direction” means in particular in a direction parallel to the mounting surface.
  • the recess extends as far as the connecting pieces. That is, the electrical connection pieces are both, at least in places, freely accessible from the mounting surface of the semiconductor device as well as from a side of the semiconductor device remote from the mounting surface and thus not covered by the housing base body.
  • the semiconductor component comprises at least one radiation-emitting optoelectronic semiconductor chip.
  • the semiconductor chip can be formed, for example, as a thin-film chip or as a substrateless semiconductor chip, as described in the publications WO 2005/081319 A1 and DE 10 2007 004 304 A1, the disclosure content of which is described therein
  • the thickness of the semiconductor chip is preferably less than 200 ⁇ m, in particular less than 50 ⁇ m.
  • the optoelectronic semiconductor chip preferably emits radiation in the near ultraviolet or visible spectral range, ie between 350 nm and 780 nm, or in the near-infrared spectral range between 800 nm and 1.1 ⁇ m.
  • the semiconductor chip is located in the recess and is electrically contacted via the connecting pieces. Furthermore the semiconductor chip is applied to at least one connector.
  • the semiconductor chip may be soldered or glued. If it is a flip-chip, then the semiconductor chip is preferably, in each case in part, mounted on both connecting pieces. If the electrical contacts of the semiconductor chip are located at a light passage area and a main side of the semiconductor chip opposite the light passage area, the semiconductor chip is preferably applied to only one connection piece. The electrical contact with the second connection piece takes place approximately via a bonding wire.
  • this comprises a shielding body, which is located between the semiconductor chip and the housing base body. That is, with respect to a direct connection line between the semiconductor chip and the housing main body, this connection line is interrupted by the shielding body. This is the case, with respect to a boundary surface of the base body facing the semiconductor chip, at least in places, preferably with respect to the entire boundary surface of the housing base body facing the semiconductor chip.
  • the shielding body shields a radiation emitted by the semiconductor chip from the housing base body. That is, at least a portion of the radiation emitted by the semiconductor chip can not pass directly to a boundary surface of the housing base body facing the semiconductor chip. The radiation can be absorbed, converted or reflected by the shielding body.
  • optoelectronic In at least one embodiment of the surface mount, optoelectronic
  • Semiconductor component this includes a mounting surface on a component underside, a housing surrounding a recess base body, which forms a part of the mounting surface, and at least two electrical connectors, which also form part of the mounting surface and not laterally overhang the housing body.
  • the recess extends here to the fittings.
  • the semiconductor device comprises at least one
  • Radiation-emitting, optoelectronic semiconductor chip which is located in the recess and electrically contacted via the connecting pieces and is applied to at least one connecting piece.
  • the semiconductor device has at least one shielding body which is located between the semiconductor chip and the housing base body, wherein the shielding body shields a radiation emitted by the semiconductor chip from the housing base body.
  • Semiconductor chip is applied to fittings that form part of the mounting surface at the same time, the thermal resistance for dissipating heat that arises during operation of the semiconductor chip, only small.
  • the shielding body is designed with a material which is impermeable to the radiation emitted by the semiconductor chip. That is, at most 1%, in particular at most 0.1%, of the radiation impinging on the shielding body, emitted by the semiconductor chip.
  • At least 80% of the surface of the housing base body facing the semiconductor chip is shielded by the shielding body.
  • at most one fifth of the semiconductor chip facing the boundary surface of the housing base body is exposed directly to the emitted radiation from the semiconductor chip.
  • the proportion of the boundary surface exposed to the radiation is at most 10%, in particular at most 5%.
  • the shielding body is designed in one piece with at least one connection piece.
  • the shielding body is formed by at least one connecting piece. This can take place in that the connecting pieces are correspondingly bent, embossed or punched, so that the connecting pieces cover the boundary surface of the housing base body facing the semiconductor chip. In particular, those boundary surfaces of the housing base body which delimit the recess are covered or shielded by the connection piece.
  • the shielding body is formed by two connection points.
  • a connection point shields one
  • Limiting surface of the recess from and the second connection point is shaped so that it shields the remaining boundary surfaces of the recess.
  • Such a Shielding body is efficient and can be compactly integrated into the semiconductor device.
  • the terminal body is electrically isolated from the connection points.
  • the connection points and the shielding body are designed in several pieces. Electrical insulation between the shielding body and connection points prevents electrical short circuits, which could result from a shielding body configured in an electrically conductive manner, for example.
  • the shielding body is designed with a metal.
  • Metal is impermeable to electromagnetic radiation emitted by the at least one semiconductor chip and, at the same time, reflective therefor, in particular in the visible spectral range and in the near UV.
  • the shielding body is impermeable to ultraviolet radiation. That is to say, radiation in the spectral range from 200 nm to 400 nm is transmitted by the shielding body at most to 5%, in particular at most to 0.5%.
  • the semiconductor component at most 10% of the emitted semiconductor chip
  • Radiation power directly, ie without light scattering, to the housing body is at most 5%, in particular at most 0.5%.
  • This proportion of the radiation power is at most 5%, in particular at most 0.5%.
  • the shielding body is designed as a foil.
  • the film is formed, for example, with a plastic, a metal, a silicone, an epoxy or a hybrid material. Films have only a small thickness, in particular less than 150 microns or less than 100 microns, and can be easily processed.
  • the shielding body is designed, for example, with a silicone film.
  • the film has a thickness of at most 150 ⁇ m, preferably of at most 100 ⁇ m.
  • Silicone represents a material that is resistant to ultraviolet radiation. It is possible that the film radiation-absorbing particles, such as soot particles, are added. By a small thickness of the film, a compact semiconductor device can be achieved.
  • the shielding body covers at least one semiconductor chip, the shielding body being permeable at least in places for at least part of the radiation emitted by the semiconductor chip during operation.
  • the shielding body is preferably at least partially radiation-permeable at those locations which cover the semiconductor chip. Such a film is efficient to apply. Since the
  • Shielding body covers the semiconductor chip, the shielding the semiconductor chip simultaneously provides protection.
  • the shielding body shields the housing base body via total reflection. That is, the shielding body is applied at least on those boundary surfaces of the housing base body, which form the boundary surfaces of the recess.
  • the recess is in this case designed, for example, in the form of a conical or a truncated pyramid, wherein the imaginary tip of the stump points beyond the light passage area in the direction of the mounting surface.
  • the boundary surfaces forming the recess thus have an angle of less than 90 ° with respect to the mounting surface. The angle is chosen such that radiation emitted by the semiconductor chip, which reaches directly to the shielding body, to the oblique, covered by the shielding body boundary surfaces of the
  • Housing body at least partially, preferably at least 80%, in particular at least 95% is totally reflected. Since in the total reflection, the electric field of the radiation in the form of an evanescent wave penetrates into the total reflecting body to a certain depth, the shielding is required on the oblique boundary surfaces of the housing main body, in spite of the total reflection about a destruction of the housing body by the emitted from the semiconductor chip To prevent radiation.
  • the shielding body is configured in a ring-shaped or box-shaped manner.
  • the shielding body is in this case preferably designed in one piece.
  • the shielding body is for example a ring which is inserted or pressed into the housing base body.
  • Such a shielding body is efficient to manufacture and provides good radiation protection.
  • the connecting pieces project in a direction perpendicular to the mounting side beyond the housing base body. This facilitates mounting of the semiconductor device to an external carrier not belonging to the semiconductor device.
  • the housing base body is designed with a material, in particular an epoxide, which is destructible by the radiation emitted by the semiconductor chip. This means that if the material of the housing base body is exposed directly to the radiation emitted by the semiconductor chip, then the material of the housing base body is destroyed due to photo damage or thermal damage.
  • Adhesion for example, to metals, and thus to the fittings, on.
  • a particular ultraviolet-impermeable material such as an epoxy
  • the at least one semiconductor chip emits radiation in the ultraviolet or in the blue spectral range, ie in particular in the wavelength range between 340 nm and 480 nm.
  • the at least one semiconductor chip emits radiation in the ultraviolet or in the blue spectral range, ie in particular in the wavelength range between 340 nm and 480 nm.
  • a radiation in this wavelength range for example via a conversion means, which is arranged downstream of the semiconductor chip, be converted into visible white light. This increases the possible uses of the semiconductor device.
  • the white light can pass through
  • Conversion of the emitted radiation from the semiconductor chip with a conversion means comprising the semiconductor device can be realized. It is likewise possible for the semiconductor component to have a plurality of differently colored semiconductor chips. In particular, that can
  • Semiconductor component red emitting, green emitting and blue emitting semiconductor chips include.
  • connection points do not penetrate the housing base at its lateral boundary surfaces. This ensures that no short circuits can occur in the lateral direction through the connection points. This applies in particular if a plurality of semiconductor components are packed tightly on an external, non-semiconductor component carrier.
  • its lateral boundary surfaces are formed by the housing base body. That is, the lateral boundary surfaces are only boundary surfaces of the housing body.
  • Housing body improves the mechanical properties of the semiconductor device.
  • the shielding body covers a side of the base body which faces away from the mounting surface.
  • the shielding body may completely or partially cover this side.
  • Such a configuration of the shielding body prevents radiation emitted by the semiconductor chip, which is scattered, from striking this side of the base body and thus could damage the base body.
  • the connector underside occupies a majority of the mounting surface. That is, the mounting surface is at least 50%, preferably at least 75%, in particular at least 80% formed by the connector bottoms.
  • the connecting pieces realizes good thermal contact with an external carrier, which is not part of the semiconductor component, in particular if the semiconductor component has lateral dimensions of at least 2 mm.
  • the shielding body includes at least one admixture in the form of an absorbent, a reflection agent, a diffusion agent or a conversion agent.
  • the Blend may be added to the material of the shielding and be present in a homogeneous distribution in the shielding. Additionally or alternatively, it is possible that the admixture is applied in the form of at least one coating on the shielding body. By using an admixture, the design options of the semiconductor device increase.
  • the at least one admixture is inhomogeneous in the
  • areas of the shielding body are free of admixture. Due to an inhomogeneous distribution of the at least one admixture, it is possible to adjust the optical properties of the shielding body selectively in places.
  • this comprises a cover plate.
  • the semiconductor device is mechanically protected.
  • the cover plate is mechanically connected to the shielding body, wherein the cover plate is not in direct contact with the housing base body.
  • the cover plate is formed as an optical element and / or the cover plate comprises at least one optically active coating or admixture.
  • the cover plate may thus include, for example, an anti-reflection coating or have a conversion agent.
  • the semiconductor chip and / or the shielding body and / or the cover plate and / or the housing base body has a
  • the structuring can serve, for example, for improving the mechanical contactability between different components of the semiconductor component or for improving the optical properties, in particular for improving the light outcoupling.
  • a cavity is formed by the cover plate and the shielding body and / or the at least one connecting piece.
  • the cover plate is preferably designed with a glass. Glasses are inexpensive and have, especially against scratching, a good mechanical protection. In addition, glasses can be transparent to radiation in the visible and near-infrared spectral range.
  • the shielding body has at least one undercut with respect to the housing base body.
  • the undercut serves to ensure a good mechanical connection between the housing body and the shielding.
  • At least one connecting piece preferably also has an undercut.
  • the latter comprises a potting body which at least partially fills the recess.
  • a potting body may be formed of a silicone. Admixtures, for example for conversion of the radiation emitted by the semiconductor chip, can be added to the potting body.
  • the potting body can thus represent approximately a lens, a microlens array or a Fresnel lens. Such a configuration of the potting body improves the optical and spectral properties of the semiconductor device.
  • the thermal expansion coefficient of the material of the shielding body is between that of the material of the semiconductor chip and that of the material of the potting body.
  • the shielding body may in particular cover the semiconductor chip and be configured as a foil.
  • Potting body and semiconductor chip occur can be reduced. This increases the life of the semiconductor device.
  • the shielding body is a silicone film, which is applied in a pre-crosslinked state at least on the housing base body.
  • Silicone has comparatively poor adhesion properties to materials such as Epoxides on. If the film is applied in a pre-crosslinked state, ie in a state in which not all chemical bonds of the silicone matrix are saturated, and the complete crosslinking takes place via a thermal or light-induced process after application, the adhesion property of the silicone is improved. This leads to an increase in the service life of the semiconductor device.
  • this comprises at least one high-performance semiconductor chip. That is, the electrical power consumption of the semiconductor chip is at least 400 mW and / or the optical power of the radiation emitted by the semiconductor chip is at least 150 mW.
  • the electrical power consumption of the semiconductor chip is at least 400 mW and / or the optical power of the radiation emitted by the semiconductor chip is at least 150 mW.
  • optoelectronic semiconductor components described here are, for example, the backlighting of displays or
  • the optoelectronic components described here can also be used in illumination devices for projection purposes, in headlamps or light emitters or in illuminants for purposes of general lighting.
  • FIG. 1 is a schematic sectional view (A) and schematic three-dimensional representations (B, C) of an embodiment of an optoelectronic device described here,
  • Figure 2 is a schematic sectional view (A) and a schematic three-dimensional representation (B) of a
  • Figure 3 shows schematic sectional views of embodiments of a component described herein with a foil-shaped shielding body
  • Figure 4 shows schematic three-dimensional representations of
  • a semiconductor chip 3 with a light passage area 30 is applied to a terminal top side 21 of a connection piece 2a, wherein the light passage area 30 faces away from the connection piece 2a.
  • the connector top 21 is opposite a connector bottom 20.
  • the connecting piece 2a, and likewise a connecting piece 2b is of a housing basic body 4 surrounded.
  • the housing base 4 is made in one piece.
  • the connecting pieces 2a, 2b each have an undercut 7. About the undercut 7, which is designed as a simsartiger projection, a good mechanical contact between the connecting pieces 2a, 2b and the housing base 4 is ensured.
  • Recess 9 extends from a housing cover surface 41 to the connector top 21.
  • the recess 9 is cuboid.
  • a frame-shaped, metallic shielding body 5 is pressed.
  • the shielding body 5 projects beyond the housing cover surface 41 in a direction perpendicular to the light passage surface 30.
  • the electrical contacting of the semiconductor chip 3 takes place on the one hand via the connector 2, on which the semiconductor chip 3 is applied directly, for example via soldering or gluing, and via a not shown bonding wire from the light passage surface 30 to the connector 2b.
  • the connecting pieces 2a, 2b are electrically insulated from one another by a further strip 44 of the housing base body 4.
  • a strip-like structured metallic contact surface 31 is applied, which ensures a uniform current injection into the semiconductor chip 3.
  • a lateral boundary surface 11 of the semiconductor device is completely formed by a housing side surface 42. That is, the lateral extent of the semiconductor device 1 is determined by the housing base body 4.
  • the housing base 4 or the semiconductor component 1 has a rectangular plan.
  • the mounting side 10, formed by the connector base 20 and the housing base 40, is planar.
  • a cover plate 6 is applied to the side of the screening body 5 facing away from the mounting side 10.
  • the cover plate 6 is mechanically fixedly connected to the shielding body 5 and spaced from the housing cover surface 41.
  • the cover plate 6 may be formed with a glass.
  • the semiconductor chip 3 may optionally comprise a not shown conversion means. It is also possible that the semiconductor device 1 includes a plurality of semiconductor chips 3.
  • the shielding body 5 prevents radiation emitted by the semiconductor chip 3 from striking the housing base body 4. Since only a small part of the radiation from the semiconductor chip 3 is emitted in the direction parallel to the light passage surface 30, the strips 43, 44 of the base body 4 are exposed to only a very small amount of radiation. Both connecting piece 2a, 2b and an inner surface 50 of the shielding body 5 are designed to be reflective for the radiation generated by the semiconductor chip 3 or optionally converted into radiation of a different frequency.
  • FIG. 2 shows a further exemplary embodiment of a semiconductor component 1.
  • the shielding body 5 is designed like a ring and has a circumferential undercut 7, via which the shielding body 5, for example via a spray or a casting process, stable and permanently connected to the housing base body 4.
  • the semiconductor chip 50 facing the semiconductor chip 3 of the shielding 5 is arranged obliquely. That is, the mounting side facing the mounting side 10 of the shielding 5 has a greater width than the mounting side 10 facing away from the part.
  • the shielding body 5 On the inner surface 50 of the shielding body 5 may optionally be attached not shown reflective coating or a roughening. Together with the connecting pieces 2a, 2b, the shielding body 5 forms a reflector for radiation emitted by the semiconductor chip 3.
  • the shielding body 5 is designed with a thermoplastic, resistant to ultraviolet radiation plastic.
  • the shielding body 5 is flush with the housing cover surface 41 from.
  • the coating can be applied before the individual
  • the shielding bodies 5 according to FIGS. 1 and 2 are each made in one piece and manufactured separately from the other components of the semiconductor component 1.
  • FIG. 3A illustrates a semiconductor component 1 without a shielding body 5.
  • a potting body 8 is introduced.
  • the potting body 8 surrounds the semiconductor chip 3 in a form-fitting manner on all sides, except for a side of the semiconductor chip 3 facing the mounting side 10.
  • the potting body 8 can be admixed, for example in the form of a filter, diffusion or conversion agent. It is also possible that the
  • Potting 8 has lens-like shapes.
  • the radiation R emitted by the semiconductor chip 3 is symbolized by arrow lines.
  • the radiation R strikes directly or scattered at least partially on boundary surfaces of the base body 4, which form the recess 9. If the base body 4 is designed with an epoxy and the radiation R is in the ultraviolet or blue spectral range, then the radiation R can destroy the material of the housing base body 4 photochemically. This leads to a shortened service life of the semiconductor device 1.
  • FIG. 3B shows that the boundary surfaces exposed to the radiation R and the housing cover surface 41 are covered by a shielding body 5 configured as a foil.
  • the areas covered by the shielding body 5 of the housing base 4 are thus protected from the radiation R.
  • the shielding body 5 is provided with a silicone film designed. The thickness of the silicone film is approximately 70 ⁇ m.
  • the silicone film is applied after the housing base body 4 is potted with the connecting pieces 2. Subsequently, for example via a laser process, at the point at which the semiconductor chip 3 and optionally a not-shown bonding wire is to be applied, the foil forming the shielding body 5 is removed. Subsequently, the semiconductor chip 3 is applied to at least one connector 2. Finally, the potting body 8 is created.
  • FIG. 3C An alternative embodiment of the shielding body 5a, 5b is shown in FIG. 3C.
  • the shielding body 5a, 5b is, as shown in FIG 3B, designed with a silicone film.
  • the shielding body 5 a is at the boundary surfaces of the
  • Housing base body 4 is applied, which form the recess 9, and on the housing cover surface 41.
  • the cover body 5a has a reflective effect for the emitted radiation from the semiconductor chip 3 R, for example, on the silicone film added TiO 2 particles.
  • the shielding body 5b is applied above the light passage area 30 and above the connector top 21.
  • the shielding body 5b is permeable to the radiation R emitted by the semiconductor chip 3.
  • the shielding body 5b reduces thermal stresses between the potting body 8 and the semiconductor chip 3 that arise during operation of the semiconductor chip 3.
  • the shielding bodies 5a, 5b can be designed in two pieces. In this case, the shielding bodies 5a, 5b are applied in different process steps. Alternatively, a continuous film may be used as the shielding body 5a, 5b be used. The film is in this case permeable to the radiation R. At the recess 9 forming boundary surfaces of the housing base 4, the radiation R can be shielded by total reflection from the housing base 4. Alternatively, it is possible to subsequently apply to the shielding body 5a a reflective, absorbing or converting coating.
  • FIG. 4 illustrates an exemplary embodiment of a semiconductor component 1 in which the shielding body 5 is embodied in one piece with the connecting pieces 2a, 2b.
  • the connecting pieces 2a, 2b are formed via a bending process or an embossing process such that the connecting pieces 2a, 2b cover the boundary surfaces of the housing base body 4 forming the recess 9 and protect against radiation emitted by the semiconductor chip 3.
  • the connecting pieces 2a, 2b or the shielding body 5 have a reflective effect on the radiation emitted by the semiconductor chip 3.
  • the thickness of the connecting pieces 2a, 2b is approximately 50 ⁇ m to 300 ⁇ m, in particular approximately 200 ⁇ m.
  • the recess 9 in the housing base 4 is designed in the form of a truncated pyramid.
  • the housing base body 4 can directly be exposed directly to the radiation emitted by the semiconductor chip 3, as shown in FIG. 4C, at the edges of the housing base body 4 delimiting the recess 9 and facing the semiconductor chip 3.
  • the surface portion of the housing base 4, which is exposed to the radiation, however, is low and less than
  • the mounting side 10 of the semiconductor device 1 is shown schematically in three dimensions. More than 50% of the mounting surface 10 are formed by the connector bottoms 20 of the connectors 2a, 2b. As a result, a large-area thermal contact with a not shown, not the semiconductor device 1 associated external carrier is guaranteed.
  • a cover plate 6 may be applied to the side of the shielding body 5 facing away from the mounting surface 10, see FIGS. 4A and 4D.
  • the cover plate 6 is for example embossed, glued or soldered.
  • the cover plate 6 can be added admixtures in the form of filter, absorption, diffusion or conversion agents. It is also possible that the cover plate 6 comprises, for example, an anti-reflection coating.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
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Abstract

L'invention concerne un composant semi-conducteur optoélectronique, montable en surface. Dans au moins un mode de réalisation du composant semi-conducteur optoélectronique (1), montable en surface, celui-ci comprend une surface de montage (10) sur un côté du composant, un corps de base de boîtier (4) qui entoure une cavité (9) et forme une partie de la surface de montage (10), et au moins deux pièces de raccordement électriques (2) qui forment également une partie de la surface de montage (10) et qui ne dépassent pas latéralement du corps de base de boîtier (4). La cavité (9) s'étend jusqu'aux pièces de raccordement électriques (2). En outre, le composant semi-conducteur (1) comprend au moins une puce semi-conductrice optoélectronique émettrice de rayonnement (3) qui se trouve dans la cavité (9) et est mise en contact électrique par l'intermédiaire des pièces de raccordement (2) et est appliquée sur au moins une pièce de raccordement (2). En outre, le composant semi-conducteur (1) comprend au moins un corps de blindage (5) qui se trouve entre la puce semi-conductrice (3) et le corps de base de boîtier (4), le corps de blindage (5) protégeant un rayonnement émis par la puce semi-conductrice (3) du corps de base de boîtier (4).
PCT/DE2009/000884 2008-08-12 2009-06-24 Composant semi-conducteur optoélectronique, montable en surface WO2010017790A1 (fr)

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DE102008038748.7 2008-08-12
DE102008038748.7A DE102008038748B4 (de) 2008-08-12 2008-08-12 Oberflächenmontierbares, optoelektronisches Halbleiterbauteil

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JP2022165826A (ja) * 2021-04-20 2022-11-01 日亜化学工業株式会社 発光装置
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WO2022260174A1 (fr) * 2021-06-11 2022-12-15 シチズン電子株式会社 Dispositif d'émission de lumière

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