WO2015078857A1 - Procédé pour la fabrication d'un élément semi-conducteur optoélectronique ainsi qu'élément semi-conducteur optoélectronique et disposition optoélectronique - Google Patents

Procédé pour la fabrication d'un élément semi-conducteur optoélectronique ainsi qu'élément semi-conducteur optoélectronique et disposition optoélectronique Download PDF

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Publication number
WO2015078857A1
WO2015078857A1 PCT/EP2014/075523 EP2014075523W WO2015078857A1 WO 2015078857 A1 WO2015078857 A1 WO 2015078857A1 EP 2014075523 W EP2014075523 W EP 2014075523W WO 2015078857 A1 WO2015078857 A1 WO 2015078857A1
Authority
WO
WIPO (PCT)
Prior art keywords
optoelectronic semiconductor
component
semiconductor component
optically inactive
radiopaque
Prior art date
Application number
PCT/EP2014/075523
Other languages
German (de)
English (en)
Inventor
Tobias Gebuhr
Michael Zitzlsperger
Tobias Schwarz
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2015078857A1 publication Critical patent/WO2015078857A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • Optoelectronic semiconductor device and a method for producing such an optoelectronic
  • An object to be solved is to provide a simplified and inexpensive method for producing a
  • Specify optoelectronic device which can be made easily and inexpensively, with desired functions can be variably integrated in the production.
  • the optoelectronic semiconductor device is a semiconductor of specified optoelectronic semiconductor device.
  • the optoelectronic semiconductor device is a semiconductor of specified optoelectronic semiconductor device.
  • the optoelectronic semiconductor component can also be a photodiode, which is used for the detection of
  • the optoelectronic semiconductor device emits radiation in one operating state and in one second operating state detected or absorbed radiation.
  • a carrier is first provided.
  • the carrier can be, for example, a temporary carrier which is removed again in a subsequent method step or else a carrier which remains on the optoelectronic semiconductor component after production.
  • the carrier may be a foil
  • Foil a printed circuit board or in general to act around a plate, which with a KunststoffStoffmaterial, a
  • the carrier contains both a foil and a printed circuit board or plate.
  • the carrier has a main extension plane in which it extends in lateral directions. Perpendicular to
  • Main extension plane in the vertical direction, the carrier has a thickness.
  • the thickness of the carrier is small compared to the maximum extent of the carrier in a lateral
  • a main plane of the carrier forms a top surface of the carrier.
  • At least one optoelectronic semiconductor component is formed
  • a light-emitting diode chip for example, a light-emitting diode chip, a
  • the housing may be, for example, a radiation-transmissive Envelope and / or a radiation-impermeable envelope and / or an otherwise mechanically stabilizing
  • stabilizing part of the housing become mechanically self-supporting, that is, that the optoelectronic
  • Manufacturing process can be handled with tools such as tweezers, without another supporting element must be present.
  • Random-transmissive that the electromagnetic radiation emitted or absorbed by the optoelectronic semiconductor component of the material used for the most part, so at least 50%, in particular at least 75%, is transmitted.
  • At least 85% is absorbed or reflected.
  • an optically inactive component may be, for example, an electronic component.
  • This electronic Component may be, for example, a resistor, for example an SMT resistor, a diode, for example a Zener diode, an electronic driver for the at least one optoelectronic semiconductor component, an integrated circuit and / or another electronic component. Furthermore, it may be in the optically inactive
  • This mechanical component may, for example, be a sleeve, a frame, an alignment hole, a screw hole, a bushing, a detent or another mechanical component.
  • the choice of the specific type of the at least one optically inactive component is based on the specific field of application of the optoelectronic component and the properties required therefor of the at least one optically inactive component.
  • the mechanical component sometimes allows accurate positioning of other optical, electronic or mechanical components, such as
  • the spatial positioning or adjustment of the further component can in this case more accurately, that is, with a lower location tolerance, carried out as in a comparable optoelectronic semiconductor device, in which the at least one
  • Optoelectronic semiconductor device is not connected to a common shaped body with the optically inactive device.
  • Cover surface of the carrier arranged. It can also be a
  • Optoelectronic semiconductor device and / or a bottom surface of the at least one optically inactive device facing the carrier preferably takes place via a
  • Adhesive which may for example have conductive or electrically insulating properties. However, it is also a solder joint or other mechanical connection between the carrier and the components possible.
  • Connection can be temporary or permanent, meaning that it can be removed without residue as well
  • Residues can leave behind when removing or can not be removed without the at least one
  • Optoelectronic semiconductor device and / or destroy the at least one optically inactive device.
  • the at least one optoelectronic semiconductor component and the at least one optically inactive component are formed or encased with a common radiopaque shaped body.
  • the forming or wrapping can be done for example by means of compression molding, liquid injection molding, transfer molding, casting, liquid injection molding, printing or the like. Forming or wrapping can be for everyone
  • the radiation-impermeable molding can, for example, a plastic, epoxy, silicone Epoxy silicone hybrid material, be formed of a thermally deformable plastic, with a glassy plastic, of a glass or of a ceramic material or contain at least one of these materials.
  • the radiopaque body can, for example, a plastic, epoxy, silicone Epoxy silicone hybrid material, be formed of a thermally deformable plastic, with a glassy plastic, of a glass or of a ceramic material or contain at least one of these materials.
  • radiopaque body further materials such as Radiation Reflective or
  • reflective particles may consist of a metal oxide, such as titanium dioxide (TiO 2 ), or may include a metal oxide introduced into a matrix material of the molded article, for example of silicone.
  • a metal oxide such as titanium dioxide (TiO 2 )
  • a metal oxide introduced into a matrix material of the molded article for example of silicone.
  • the radiation-impermeable embodiment of the shaped body allows an optical separation of the optoelectronic semiconductor components from one another.
  • by the radiopaque body is the lateral radiation of each optoelectronic
  • Semiconductor device prevents and the radiation takes place only via a radiation passage area, which is located on the side facing away from the carrier top surface of the optoelectronic semiconductor device and in the context of
  • Manufacturing tolerances runs parallel to the top surface of the carrier. This also prevents crosstalk between the individual light sources. As a result, for example, a more defined emission characteristic than in the case of similar optoelectronic semiconductor components without a
  • radiopaque shaped body can be reduced.
  • the shaped body covers a bottom surface and the
  • the molded body is there connected to the side surfaces without a connection.
  • free of compound that no connecting material between the side surfaces of
  • Shaped body is thus the connecting side surfaces are in direct contact with the molding. It is possible that all side surfaces of the at least one optoelectronic semiconductor component and / or the
  • At least one optically inactive component are completely covered by the molding.
  • the at least one optoelectronic semiconductor component is also possible that the at least one optoelectronic semiconductor component
  • the at least one optically inactive component are covered only up to a certain height, starting from the top surface at their connecting side surfaces of the molding and parts of the at least one optoelectronic
  • radiopaque shaped body and thus are freely accessible from the outside.
  • Optoelectronic semiconductor device and the bottom surface of the at least one optically inactive device free from the molding or by removing the molding
  • the radiation passage area of the at least one optoelectronic semiconductor component remains free of the molded body or is exposed by removal of the molded body.
  • the radiation passage area for example, by a mechanical cover of
  • Shaped bodies are kept free.
  • the curved bodies are kept free.
  • Optoelectronic semiconductor device can be covered with a film which can be removed without residue from the radiation passage area after forming.
  • a film which can be removed without residue from the radiation passage area after forming.
  • the Shaped body can also chemically or mechanically by the
  • the molding can be heated or abraded or chemically peeled off.
  • the method comprises the following steps:
  • Component connecting side surfaces of the at least one optically inactive component at least partially covered.
  • the at least one optically inactive component it is possible for the at least one optically inactive component to be replaced by an optically active component and / or a radiation-detecting component.
  • optical semiconductor device and the at least one optically inactive device having a common
  • radiopaque shaped body in a common process step, ie in the context of manufacturing tolerance simultaneously achieved.
  • Fabrication of the optoelectronic semiconductor device is by the simultaneous forming of the desired
  • the carrier is an auxiliary carrier which, after being formed or coated with the radiopaque body, is made of the composite of the radiopaque body and the
  • the carrier formed as a subcarrier can
  • the removal can be a foil or a rigid plate. It may, for example, contain a plastic, a metal or a ceramic material.
  • an adhesive layer which is thermally and / or chemically detachable may be arranged between the carrier and the components of the semiconductor component.
  • Optoelectronic semiconductor device and the originally facing the carrier bottom surface of the at least one optically inactive device freely accessible.
  • the two bottom surfaces are free of the carrier material and / or another material.
  • the side surfaces of the at least one optoelectronic semiconductor component and the at least one optically inactive component are in direct
  • the shaped body is a mechanically stabilizing body which, if present, a multiplicity of optoelectronic semiconductor components and / or optically inactive components with one another
  • Semiconductor device and the at least one optical inactive component can be mechanically self-supporting.
  • mechanically self-supporting means that the optoelectronic semiconductor component, for example, in the context of the
  • a pair of tweezers can be handled without the need for another mechanically supporting element.
  • there may be another carrier there may be another carrier
  • the housing of the at least one optoelectronic comprises
  • At least one radiation-transmissive sheath which is in direct physical contact with the at least one optoelectronic semiconductor chip.
  • e can be, for example, a potting body which contains a luminescence conversion material and / or a potting compound
  • the radiation-transmissive sheath Contains radiation scattering material.
  • the radiation-transmissive sheath is optically clear. Furthermore, it may be at the
  • radiation-transmissive cladding act around a lens which for beam shaping for the emitted or absorbed by the optoelectronic semiconductor chip
  • the radiation-transmissive sheath may be formed, for example, with silicone, a phosphor, glass, plastic, ceramic, epoxy, epoxy-silicone hybrid material or another transparent or semi-transparent material.
  • the radiation-permeable sheath may further comprise a matrix material in which reflective or absorbent particles are incorporated , According to at least one embodiment of the method, the at least one optoelectronic semiconductor component is before the forming of the at least one optoelectronic component
  • the application of the radiation-permeable casing can take place, for example, by means of compression molding, liquid injection molding, transfer molding, casting, liquid injection molding, printing or a similar process.
  • a cover surface of this casing facing away from the carrier forms the
  • connection between the carrier and the at least one optoelectronic semiconductor component and the at least one optically inactive component can be detached in a non-destructive manner. That is, the compound can be made, for example, via an adhesive that can be removed by heating or chemical peeling.
  • Non-destructively detachable here means that at the optoelectronic
  • Semiconductor component consists after releasing the carrier only from the composite of at least one optoelectronic Semiconductor device, the at least one optically inactive device and the radiopaque body.
  • Forming or encapsulation with the radiopaque body is covered with a material which the
  • Optoelectronic semiconductor device protects the molded body. By covering with this material, the radiation passage area of the at least one remains
  • the covering material may for example be a film.
  • the material can be left without residue from the
  • Optoelectronic semiconductor device can be detached.
  • the optoelectronic semiconductor component can preferably be produced by means of one of the methods described here. That is, all for the process
  • the optoelectronic component comprises
  • Semiconductor component at least one optoelectronic
  • Semiconductor device comprising at least one
  • the optoelectronic semiconductor chip and a housing and at least one optically inactive component.
  • the at least one optoelectronic semiconductor component and the at least one optically inactive component are at their lateral lying, the top surface respectively
  • Radiation passage surface and the bottom surface connecting side surfaces are connected to each other via a radiopaque body and are in direct with this
  • Optoelectronic semiconductor device and / or the at least one optically inactive device can be completely covered by the radiopaque body.
  • the side surfaces only up to a certain height above the
  • Covering surface of the carrier are covered by the molding and in places are freely accessible.
  • the composite is made of
  • radiopaque shaped body the at least one optoelectronic semiconductor component and the at least one optically inactive component mechanically self-supporting.
  • the radiation-impermeable one has
  • Shaped body a top surface and a bottom surface, wherein the top surface of the radiopaque body shape with the radiation passage area of the at least one
  • Optoelectronic semiconductor device and the bottom surface of the radiopaque shaped body forms a flush surface with the bottom surface of the at least one optoelectronic semiconductor device and / or with the bottom surface of the at least one optically inactive device.
  • the top surface or the bottom surface of the radiopaque body protrudes beyond
  • radiopaque body in the context of
  • the housing of the at least one optoelectronic semiconductor component has a
  • radiation-transmissive envelope which is in direct physical contact with the at least one optoelectronic semiconductor chip.
  • the housing comprises at least one
  • the at least one radiation-impermeable enclosure is laterally spaced apart from the at least one optoelectronic semiconductor chip and surrounds the at least one optoelectronic semiconductor chip at least in the lateral direction.
  • radiopaque cladding may for example be made of epoxy resin, of silicone, of epoxy-silicone hybrid material with a plastic or otherwise
  • radiopaque material may be formed.
  • radiopaque cladding may in particular contain the same material as the radiation-transmissive molded body.
  • the radiopaque enclosure fulfills a similar or the same purpose as the radiopaque shaped body and serves in particular the optical separation of the optoelectronic
  • Semiconductor chip may, for example, a
  • the at least one optoelectronic semiconductor component may be a
  • prefabricated component comprising a housing and external electrical connection points, which are freely accessible from the outside, wherein a part of the housing, the at least one optoelectronic semiconductor chip on one of
  • the housing which covers the optoelectronic semiconductor chip at its bottom surface, it may be, for example, an envelope which is transparent to radiation or
  • the part of the housing may, for example, contain a semiconductor material, a metal, a plastic or a ceramic material.
  • the outer electrical connection points may be, for example, a metallic layer, a lead frame or a via, which is in direct contact with the housing.
  • the optoelectronic Semiconductor chip is, for example, a thin wire, a wire contact, a via or a direct physical contact with the electrical
  • the prefabricated component may be, for example, a light-emitting diode or a photodiode.
  • the optoelectronic semiconductor component at least one of them has at least one
  • the radiopaque body traces of separation on.
  • the side surface has traces of a material removal or a sawing process and has a higher roughness than non-isolated surfaces. A carried out singling is therefore due to the
  • the carrier is a connection carrier and the radiopaque shaped body is at least
  • connection carrier in places connected without connecting means with the connection carrier. This means that there is no connecting material between a bottom surface of the molded body and the top surface of the carrier and thus the two surfaces are in direct contact.
  • the connection between the connection carrier and the body arises during curing of the molded body on
  • connection carrier may be any connection carrier.
  • the connection carrier may be any connection carrier.
  • a printed circuit board PCB
  • a metal core board PCB
  • a preformed lead frame PCB
  • a ceramic substrate with traces or the like act.
  • an optoelectronic device is specified.
  • the optoelectronic arrangement comprises an optoelectronic semiconductor component described here, which can preferably be produced by means of a method described here. That is, all disclosed for the method and for the optoelectronic semiconductor device
  • the latter comprises at least one optoelectronic semiconductor component according to one described here
  • Embodiment and a circuit board having a top surface, a first region and at least a second region, wherein the at least one optoelectronic semiconductor device is disposed on the top surface of the circuit board, wherein at least one optoelectronic semiconductor device of the at least one optoelectronic semiconductor device is disposed over the first region of the circuit board and is in thermal contact with this first region, and at least one optically inactive component of the at least one optoelectronic semiconductor component in the second
  • the thermal contact may be, for example, a solder joint or an adhesive which is conductive or non-conductive
  • Area of the circuit board has a higher thermal conductivity than the second area of the circuit board.
  • PCB can, for example, at least
  • PCB printed circuit board
  • Metal core board a preformed lead frame
  • ceramic substrate with traces or the like act.
  • the first part of the printed circuit board can be formed, for example, with a thermally more conductive material than the second part of the printed circuit board. It is also possible that
  • the part of the optoelectronic semiconductor component which is arranged in the first region of the printed circuit board may, for example, be the entirety of the optoelectronic ones
  • Semiconductor devices include, which make higher demands on the thermal conductivity of the circuit board.
  • the part of the optoelectronic semiconductor component which is arranged in the second region of the printed circuit board can, for example, comprise optically inactive components, which are smaller
  • the two areas of the circuit board are thermally separated from each other.
  • a thermally insulating material or a gap for example, between the two areas, a thermally insulating material or a gap
  • the at least one optoelectronic semiconductor component only over the first
  • Area of the circuit board can then, for example, a
  • FIG. 1 and FIG. 2 show exemplary embodiments of the method described here on the basis of schematic sectional representations.
  • FIGS. 3 to 6 show schematic representations of FIG
  • FIG. 7 shows schematic representations of FIG
  • a carrier 1 is provided with a top surface 1a.
  • the carrier may be, for example, a act temporary carrier, in a subsequent
  • Process step is removed again or even to a carrier, which after manufacture on the
  • Carrier may be, for example, a foil, a printed circuit board or generally a plate which is formed with a KunststoffStoffmaterial, a metal, a ceramic material or a semiconductor material.
  • a plurality of optoelectronic semiconductor devices 2 and a plurality of optically inactive components 4, 5 are arranged on the top surface la of the carrier 1.
  • Bottom surface 4b, 5b of the at least one optically inactive component 4, 5 are the top surface la of the carrier 1
  • Semiconductor component 2 is in the present case a prefabricated component.
  • the optoelectronic semiconductor component 2 may be a
  • Light emitting diode device or act on a photodiode device.
  • the at least one optoelectronic semiconductor component 2 comprises at least one optoelectronic semiconductor chip 21, a housing 22, 25, 26, external electrical connection points 24 and a wire contact 23.
  • Semiconductor chip 21 may be, for example, a
  • the housing 22, 25, 26 of the at least one optoelectronic semiconductor component comprises at least one
  • the radiation-transmissive sheath 25 may be, for example, a
  • Casting body containing a luminescence conversion material and / or a radiation-scattering material.
  • the radiation-transmissive sheath 25 is optically clear.
  • the mechanically stabilizing part 26 may be, for example, a substrate. Furthermore, the mechanical
  • Enclosure 25 be integrally formed.
  • the radiation-permeable casing can be made, for example, of silicone, a phosphor, glass, plastic, ceramic,
  • Epoxy resin, epoxy silicone hybrid material or other transparent or semi-transparent material may be formed.
  • the radiation-transmissive sheath 25 may, for example, comprise one of said materials as matrix material into which reflective or absorbent particles
  • the part of the housing 26 which covers the optoelectronic semiconductor chip at its bottom surface 21b may, for example, be a cladding which
  • Radiolucent or radiopaque is radiolucent or radiopaque.
  • the part of the housing 26 may be formed, for example, of a semiconductor material, a metal, a plastic or a ceramic material.
  • the outer electrical connection points 24 are between the part of the housing 26, which the bottom surface 21 b
  • the outer electrical connection points 24 may be, for example, a metallic layer, a lead frame or a
  • Connection points 24 are in direct contact with the housing
  • the optoelectronic semiconductor chip is electrically connected to the external electrical via the wire contact 23
  • the optically inactive component 4, 5 may be, for example, an electronic component 4.
  • This electronic component 4 can be, for example, a resistor, for example an SMT resistor, a diode, for example a Zener diode, an electronic driver for the at least one optoelectronic semiconductor component, an integrated circuit and / or another electronic component.
  • the electronic component in FIG. 1A is a resistor with two electrical contacts 42 and a resistor body 41.
  • the optically inactive component may be a mechanical component 5.
  • This mechanical component 5 can be, for example, a sleeve, a frame, an alignment hole, a screw hole, a bushing, a detent or another mechanical component.
  • Mechanical component 5 in FIG. 1A is a mechanical feedthrough having a cavity 52 and a sleeve body 51.
  • the cavity 52 is free of a filling material and serves, for example, as a guide tube for a connecting workpiece, such as a screw or a pin.
  • the at least one optoelectronic semiconductor component 2 and the at least one optically inactive component 4, 5 can be positioned on the carrier 1, for example with a mounting system or a placement system.
  • the connection between the carrier 1 and the at least one optoelectronic semiconductor component 2 and / or the at least one optically inactive component 4, 5 preferably takes place via an adhesive, for example
  • solder joint may have conductive or electrically insulating properties. However, it is also a solder joint or a
  • connection can be temporary or permanent, that is to say that it can be removable without leaving any residue and can also leave residues on removal or can not be removed without the at least one optoelectronic semiconductor component 2 and / or the at least one optically inactive component 4. 5 to destroy.
  • radiation-permeable molded body 6 transforms or enveloped.
  • the forming or wrapping for example, by means of
  • Compression molding, liquid injection molding, transfer molding, casting, liquid injection molding, printing or the like done.
  • the Forming or wrapping can be done simultaneously for all components, in particular in a common method step, ie within the scope of manufacturing tolerance.
  • the radiopaque molded body 6 may, for example, a plastic, epoxy, silicone
  • Epoxy silicone hybrid material from a thermal
  • deformable plastic consist of a glassy plastic, of a glass or of a ceramic material or contain at least one of these materials.
  • the radiopaque body can be
  • the molded body 6 may appear white, colored or black when exposed to light. It is possible that the radiopaque body 6 more
  • Materials such as radiation-reflecting or radiation-absorbing particles comprises.
  • reflective particles may be formed of a metal oxide such as titanium dioxide (TiO 2 ) or contain a metal oxide, and incorporated into a matrix material of the molded article 6, for example of silicone.
  • a metal oxide such as titanium dioxide (TiO 2 ) or contain a metal oxide, and incorporated into a matrix material of the molded article 6, for example of silicone.
  • radiopaque shaped body 6 takes place such that the at least one optoelectronic semiconductor component 2 and the at least one optically inactive component 4, 5 on their side surfaces 2c, 4c, 5c on the
  • radiopaque shaped body 6 are connected to each other.
  • the side surfaces 2c of the at least one optoelectronic semiconductor component 2 and the side surfaces 4c, 5c of the at least one optically inactive one Component 4, 5 are in direct contact with the radiopaque body 6.
  • radiopaque shaped body 6 and thus are freely accessible from the outside.
  • the carrier 1 can be removed in a process step, not shown, but it can also on the composite of the shaped body 6, the at least one optoelectronic
  • FIG. 2A and FIG. 2B show a first one
  • FIG. 2A shows the method step with reference to FIG.
  • Wire contact 23 is used for electrical connection between the freely accessible outer electrical connection points 24 and the optoelectronic semiconductor chips 21.
  • the outer electrical connection points 24 penetrate the carrier 1 completely, whereby a contacting of
  • FIG. 2C and FIG. 2D show another one
  • FIG. 2C shows the method step with reference to FIG.
  • the optoelectronic semiconductor chips 21 are formed with the radiation-transmissive sheath 25.
  • the forming can be carried out, for example, by means of compression molding, liquid injection molding, transfer molding, casting, liquid injection molding, printing or the like. In this case, connecting webs 29 between the radiation-transmissive sheaths 25 adjacent
  • FIG. 2E and FIG. 2F show another one
  • FIG. 2E shows the method step with reference to FIG.
  • Optoelectronic semiconductor component 2 is now transformed with the radiopaque shaped body 6.
  • the radiopaque shaped body 6 can cover the side surfaces 2c of the optoelectronic semiconductor components 2 completely or only up to a certain height above the top surface la of the carrier 1.
  • FIG. 3 shows a first exemplary embodiment of an optoelectronic semiconductor component 9 described here.
  • FIG. 3A shows the exemplary embodiment with reference to FIG.
  • Semiconductor device 9 can be described with one here
  • Process are prepared, wherein the carrier 1 is detached.
  • this includes
  • optoelectronic semiconductor device 9 at least one
  • Optoelectronic semiconductor component 2 and at least one optically inactive component 4, 5 are components which are described, for example, in conjunction with FIG. 1 and FIG ,
  • the at least one optoelectronic semiconductor component 2 and the optically inactive components 4, 5 are connected to each other by means of a radiopaque shaped body 6
  • the bottom surface 2b of the optoelectronic semiconductor component 2, the bottom surface 4b, 5b of the optically inactive component 4, 5 and the bottom surface 6b of the radiopaque body 6 are thus substantially, that is, in the context of manufacturing tolerances, in a plane.
  • Optoelectronic semiconductor device 2 and the top surface 6a of the radiopaque body 6 in the context of manufacturing tolerances in a plane.
  • FIG. 4 shows by way of a schematic
  • the optoelectronic semiconductor device 9 again comprises at least one optoelectronic semiconductor device 2 and at least one optically inactive device 4, 5.
  • the at least one optoelectronic semiconductor device 9 again comprises at least one optoelectronic semiconductor device 2 and at least one optically inactive device 4, 5.
  • the at least one optoelectronic semiconductor device 9 again comprises at least one optoelectronic semiconductor device 2 and at least one optically inactive device 4, 5.
  • Semiconductor component 2 comprises at least one
  • the radiopaque envelope 27 encloses the
  • the radiation-impermeable enclosure 27 may, for example, epoxy resin, silicone, epoxy-silicone hybrid material, a plastic or a be formed otherwise radiopaque material.
  • the radiopaque enclosure 27 may
  • FIG. 5 shows, on the basis of a schematic sectional representation, a further exemplary embodiment of an optoelectronic semiconductor component 9 described here
  • the carrier 1 was not detached and the carrier 1 is a connection carrier.
  • the connection carrier may be, for example, a printed circuit board (PCB), a metal core board, a preformed one
  • the radiopaque molded body 6 is in direct contact with the top surface 1a of the carrier 1 and is connected to the top surface la of the carrier 1 without any connection means.
  • At least one optoelectronic semiconductor component 2 is arranged on the carrier 1, with a housing 22, 25, comprising a radiation-permeable enclosure 25, and an optoelectronic semiconductor chip 21.
  • at least one optically inactive component 4, 5 can be provided be arranged the carrier 1.
  • the carrier 1 includes freely accessible outer
  • the electrical connection points 24 may be, for example, a metallic layer, a lead frame or a via.
  • FIG. 6 shows by way of a schematic
  • the optoelectronic Semiconductor device 9 exactly one optoelectronic semiconductor device 2, which at least one
  • Optoelectronic semiconductor chip 21 and a housing 22, 25, 26 comprises, at least one optically inactive component 4, 5 and a the optoelectronic semiconductor device 2 and the optically inactive device 4, 5 connecting
  • radiopaque shaped body 6 has its
  • Side surfaces 6c traces of singulation 61 on.
  • the side surfaces 6c have traces of material removal or sawing process.
  • FIG. 7 shows schematic sectional representations of FIG
  • the exemplary embodiment shown in FIG. 7A comprises a printed circuit board 7, which comprises a first region 71 and a second region 72.
  • the circuit board 7 may, for example, at least partially to a
  • PCB printed circuit board
  • metal core board a metal core board
  • preformed lead frame a ceramic carrier with
  • Conductor tracks or the like act.
  • the printed circuit board 72 further comprises a cover surface 7a on which an optoelectronic device described herein
  • Semiconductor component 9 is arranged. At least one optoelectronic semiconductor component 2 of the
  • Region 71 of the printed circuit board 7 is in thermal contact with this first region 71. Further is
  • At least one optically inactive component 4, 5 arranged over the second region of the circuit board 72 and is available said second region 72 also in thermal contact.
  • the thermal contact for example, with a
  • Solder connection or an adhesive, which may be conductive or non-conductive, or other thermal contact means are produced.
  • the first region 71 of the printed circuit board 7 has a higher thermal conductivity than the second region 72 of FIG
  • Circuit board 7 In that shown in Figure 7A
  • Semiconductor devices 2 and the optically inactive devices 4, 5 pre-sorted according to their thermal properties and grouped according to these in the optoelectronic semiconductor device 9. This enables effective heat dissipation from the optoelectronic semiconductor device 9.
  • FIG. 7B shows a schematic view
  • Optoelectronic arrangement again comprises a printed circuit board 7, wherein the printed circuit board 7 now has a first region 71, a second region 72 and a third region 73
  • the third region 73 is preferably thermally insulating or thermally poorly conductive.
  • the third region 73 may be, for example, a ceramic or air.
  • Printed circuit board 7 is arranged. In this case, all the components of the optoelectronic semiconductor component 9 are in thermal contact with the first region 71 of the printed circuit board 7.
  • the optoelectronic semiconductor component 9 thus includes
  • an optoelectronic semiconductor component 9 can be arranged, which places less demand on the heat dissipation than the optoelectronic semiconductor component arranged above the first region 71 9. Furthermore, above the second optoelectronic semiconductor component 9
  • Region 72 only optically inactive components 4, 5 are arranged.
  • the second region 72 of the printed circuit board 7 can be
  • circuit board 7 for example, be a separate circuit board 7.
  • the method described here is very simple in a common method step due to the forming of the at least one optoelectronic semiconductor component 2 and of the at least one optically inactive component 4, 5.
  • At least one optoelectronic semiconductor component 2 and the at least one optically inactive component 4, 5 take place on the carrier 1 very space-saving, whereby the production of an optoelectronic semiconductor device 9 is made possible, which has in particular good heat conduction properties and optimum area utilization.

Abstract

L'invention concerne un élément semi-conducteur optoélectronique présentant : • - au moins un élément semi-conducteur optoélectronique (2), comprenant au moins une puce semi-conductrice optoélectronique (21) et un boîtier (22), et • - au moins un composant optiquement inactif (4, 5), • - ledit au moins un élément semi-conducteur optoélectronique (2) et ledit au moins un composant optiquement inactif (4, 5) étant reliés l'un à l'autre via leurs surfaces de côté se situant latéralement (2c, 4c, 5c) via des corps façonnés (6) transparents à un rayonnement. Un élément fabriqué au moyen de ce procédé est également décrit.
PCT/EP2014/075523 2013-11-28 2014-11-25 Procédé pour la fabrication d'un élément semi-conducteur optoélectronique ainsi qu'élément semi-conducteur optoélectronique et disposition optoélectronique WO2015078857A1 (fr)

Applications Claiming Priority (2)

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DE102013113185.9A DE102013113185A1 (de) 2013-11-28 2013-11-28 Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils sowie optoelektronisches Halbleiterbauteil und optoelektronische Anordnung
DE102013113185.9 2013-11-28

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US10551178B2 (en) 2011-08-09 2020-02-04 Apple Inc. Overlapping pattern projector
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