Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
  • H10K59/80—Constructional details
  • H10K59/87—Passivation; Containers; Encapsulations
  • H10K59/871—Self-supporting sealing arrangements
  • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/84—Passivation; Containers; Encapsulations
  • H10K50/842—Containers
  • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/84—Passivation; Containers; Encapsulations
  • H10K50/844—Encapsulations
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
  • H10K59/80—Constructional details
  • H10K59/87—Passivation; Containers; Encapsulations
  • H10K59/873—Encapsulations

Definitions

• a method for encapsulating an optoelectronic component according to claim 1 is specified.
• Encapsulation techniques still occur in pinholes or defects in the encapsulation layer which lead to leaks. By these leaks, for example, humidity from the environment can penetrate to the optoelectronic device and this with the
• the optoelectronic component can be, for example, an organic light emitting diode (OLED).
• OLED organic light emitting diode
• an OLED can comprise the following layer sequence: an anode, a cathode, and a radiation-emitting layer arranged between the two.
• the radiation-emitting layer may in this case comprise an organic material.
• Electrodes which are discharged from the cathode, in the radiation-emitting layer.
• the energy released by the recombination can be emitted in the radiation Layer molecules to stimulate the emission of radiation.
• the OLED is an optoelectronic electroluminescent component.
• an OLED may comprise as further layers: a hole-inducing layer, a hole-transporting layer
• the optoelectronic component can also be other forms of electroluminescent components, as well as non-electroluminescent components.
• the optoelectronic component is covered by a housing and the space between the component and the housing additionally contains a getter.
• a getter is one
• a "large-area" optoelectronic component is understood to be an optoelectronic component whose area is greater than or equal to 3 mm 2 , and it is also difficult to produce very thin optoelectronic components with this method.
• An object of method variants of this invention is to provide a method by which an optoelectronic device can be tightly encapsulated to protect against environmental influences.
• a method variant for the encapsulation of an optoelectronic component comprises the method steps A) providing the optoelectronic component, and B) depositing a diffusion barrier for protection against environmental influences by means of an atmospheric pressure plasma on at least one subregion of the surface of the optoelectronic component.
• the diffusion barrier By depositing the diffusion barrier by means of atmospheric pressure plasma, it can be ensured that the deposited layer has a very high density.
• the diffusion barrier has no or almost no pinholes or defects. It is achieved a significantly higher density than in the usual Dünnfilmverkapselungsstepn.
• the optoelectronic device can be effectively protected from environmental influences by the atmospheric pressure plasma encapsulation. This method is also suitable for very large area applications.
• the use of an atmospheric pressure plasma has some advantages over the use of a low pressure plasma technique.
• the apparatus cost of the atmospheric pressure plasma is significantly lower than in low-pressure plasma.
• low-pressure plasma it is necessary that the device to be coated is placed in a chamber in which then the pressure is reduced, after the deposition process, the pressure is adjusted back to normal pressure and the
• Component is retrieved from the chamber again.
• the atmospheric pressure plasma it is not necessary to introduce the device in a closed chamber.
• the device can be coated under normal conditions, that is to say in air atmosphere under normal pressure. This is thus also possible, for example, directly on an assembly line. Due to the fact that there is no spatial restriction, it is much easier, for example, to use only individual points on the component, for example with machines that are used for deposition, and not to coat the entire surface as in the low-pressure chamber.
• the use of the atmospheric pressure plasma can also be carried out under a protective gas atmosphere.
• the diffusion barrier can be deposited here in a thickness of 50 ntn to 1000 nm. Preferably, it is deposited in a thickness of 100 nm to 250 nm.
• This encapsulation technique thus enables the production of very thin optoelectronic components, which nevertheless have a very high impermeability to environmental influences.
• This method can also be used very well for large-area components, since here in contrast to the housing technology in which the production of very large housings is a problem, here the size of the optoelectronic device from a technical point of view does not matter.
• the diffusion barrier can be produced in the process by depositing individual layers. In this case, two or more individual layers can be deposited one above the other. Each of the individual layers may have a thickness of, for example, 50 to 100 nm. By applying single layers, the tightness of the total layer can be increased again. Furthermore, layers with different thicknesses can thus be produced on the component at different points.
• the diffusion barrier may comprise SiO 2 .
• the total diffusion barrier preferably consists of amorphous SiO 2 .
• the SiO 2 can in this case only be formed in the gas phase.
• a silane and another compound serving as an oxygen source can be used.
• As the silane SiH4 example, can be used and as an oxygen source for example N 2 O.
• a plasma jet can be used for the deposition in process step B) on partial regions of the optoelectronic component.
• the plasma jet can be guided over the surface of the component to be coated at a speed of 5 to 1000 m per minute.
• the diffusion barrier can thus be deposited as required on very small, for example punctiform subregions, as well as on very large areas of the device.
• the plasma can be generated in a process variant in a plasma nozzle.
• the plasma nozzle it can be formed into a plasma jet.
• the plasma jet can be found in the Plasma nozzle are fed to a precursor from which then the material is formed, which forms the diffusion barrier layer.
• These can also be multiple precursors.
• two precursors can react in the plasma jet and the reaction product of this reaction can then be deposited on the surface of the optoelectronic component.
• the precursors may be, for example, a silane and a compound which serves as an oxygen source.
• a pulsed arc is generated in the plasma nozzle by means of high-voltage discharge.
• a voltage can be used which is in the range of 5 to 30 kV.
• a frequency can be used which is in the range of 10 to 100 kHz.
• a DC discharge is used.
• method step A) comprises the following partial method steps A1) providing a substrate, A2) applying a first electrode layer to the substrate, A3) applying an organic functional layer to the first electrode layer, and A4) applying a second electrode layer the organic functional layer, wherein a layer stack comprising the first electrode layer, the second electrode layer and the organic functional layer is formed.
• a layer stack of the optoelectronic component is generated.
• at the organic functional layer may be, for example, a light-emitting layer.
• the two electrode layers serve for electrical contacting of the component.
• method step A) comprises, as a further substep step A5), the application of a first encapsulation layer to the second electrode layer.
• the encapsulation layer serves for encapsulation of the optoelectronic component and thus for protection against environmental influences.
• the first encapsulation layer is applied by means of atmospheric pressure plasma.
• a sufficient degree of tightness is already achieved by the application of the first encapsulation layer.
• the application of further encapsulation layers is not necessary in this process variant.
• the application of the first encapsulation layer can take place under protective gas atmosphere.
• the layer stack generated in the partial process steps A1) to A4) has main surfaces, which are the outer surfaces that run parallel to the layer sequence. Furthermore, the layer stack has side surfaces which are the outer surfaces that run perpendicular to the layer sequence.
• An optoelectronic component can be encapsulated, for example, in that the diffusion barrier on the side surfaces of the
• Layer stack is deposited. This variant of the method is conceivable, for example, if the layer stack already has a layer as the uppermost layer, which has a layer has very high tightness, so that the penetration of, for example, humidity is conceivable only on the side surfaces of the layer stack.
• a thin-film encapsulation layer is applied to the second electrode layer in an additional process step after the partial process step A4).
• the optoelectronic component is already pre-encapsulated by the thin-film encapsulation layer.
• the optoelectronic component then already has a first basic tightness against environmental influences.
• Subprocesses Al) and A2) applied a conductive transparent layer on the first substrate.
• a second method step is used in an additional method step
• Verkappeiungstik applied to the Dünnfilmverkapselungs slaughter.
• a particularly high degree of tightness is achieved.
• a cover plate can be used for the first encapsulation layer. This makes it possible, for example, to seal one or even both main surfaces of the layer stack quickly and efficiently in the case of very large-area components.
• the optoelectronic component can thus radiate without great radiation losses, for example, through the main surface which has been encapsulated, for example, with a glass cover plate.
• Process variant must then be tightly encapsulated the side surfaces of the layer stack. This can be done, for example, by depositing the diffusion barrier on the side surfaces of the layer stack.
• a lacquer is used for the first encapsulation layer.
• the lacquer layer can be applied for example on a previously deposited diffusion barrier.
• the paint layer can serve as scratch protection, for example.
• a variant of the method is also possible in which first the lacquer layer is applied, for example, to the second electrode layer, and only then, in a subsequent method step, is the diffusion barrier applied to the lacquer layer.
• the layer stack or the second electrode layer can be protected by the lacquer layer in front of the plasma jet, with which the diffusion barrier is deposited.
• the optoelectronic component can be encapsulated in such a way that no cavity, ie no cavities, arises between the component and the encapsulation.
• An embodiment of the optoelectronic component here comprises a first substrate, a first one
• Electrode layer disposed on the first substrate, an organic functional layer disposed on the first electrode layer, a second electrode layer arranged on the organic functional layer, a first encapsulation layer disposed on the second electrode layer and a diffusion barrier of SiC> 2, which was deposited on at least a portion of the surface of the device by means of atmospheric pressure plasma.
• the optoelectronic component further comprises a conductive transparent layer, which is arranged on the first substrate.
• the optoelectronic component comprises a thin-film encapsulation layer, which is arranged on the second electrode layer.
• the optoelectronic component comprises a second encapsulation layer which is located on the
• Thin film encapsulation layer is arranged.
• the component comprises a cover plate as the first encapsulation layer.
• the component comprises a lacquer layer as the first encapsulation layer.
• the component comprises a first encapsulation layer, which was deposited by means of atmospheric pressure plasma.
• FIGS. 1 to 5 each show a schematic side view of an embodiment of the optoelectronic component.
• FIG. 1 shows the schematic side view of a possible embodiment of the optoelectronic component.
• 1 shows the layer sequence substrate 1, arranged thereon a conductive transparent layer 2, arranged thereon a first electrode layer 3, on which the organic functional layer 4 is arranged.
• the organic functional layer 4 is followed by the second electrode layer 5.
• the first electrode layer 3 is electrically conductive over the
• the first electrode layer 3 is electrically insulated from the second electrode layer 5.
• the organic functional layer for example, visible radiation can be generated which are then discharged, for example, over the bottom of the device as visible radiation 20 can.
• the radiation can be emitted via the upper side.
• the second electrode layer 5 is followed by a thin-film encapsulation 6.
• the thin-film encapsulation 6 is used for pre-encapsulation of the optoelectronic component, so that it already has a first basic seal with respect to environmental influences.
• the thin-film encapsulation can be applied, for example, using a PE-CVD process (plasma-enhanced chemical vapor deposition).
• the thin-film encapsulation 6 can For example, consist of oxide or nitride layers such as SiO or SiN. It is also conceivable a multi-layer combination of nitride and oxide layers. However, since such a thin-film encapsulation 6 may have pinholes or other leaks, there are others
• the component in FIG. 1 comprises a thin film encapsulation 6
• Diffusion barrier 12 which was deposited by means of atmospheric pressure plasma.
• the diffusion barrier 12 is deposited in this embodiment both on the upper main surface as well as on the side surfaces of the layer stack.
• the diffusion barrier 12 can be applied by means of atmospheric pressure plasma in several individual layers, thus the different partial regions can have different thicknesses of the diffusion barrier 12.
• FIG. 2 shows a further embodiment of the optoelectronic component.
• this embodiment also comprises the layer sequence substrate 1, conductive transparent layer 2, first electrode layer 3, the organic functional layer 4 arranged thereon, and the second electrode layer 5 arranged thereon.
• the embodiment also comprises the contacting 9, the insulation layer 10, as well as the thin-film encapsulation 6, which is arranged on the second electrode layer 5.
• Thin film encapsulation 6 a resist layer 8 is arranged in this embodiment.
• the main surface is the combination Thin-film encapsulation 6 and paint layer 8 encapsulated.
• the side surfaces of the layer stack are encapsulated in this embodiment, as well as in the embodiment shown in Figure 1 by the diffusion barrier 12, which was deposited with atmospheric pressure plasma. The deposition of the diffusion barriers 12 by means of atmospheric pressure plasma has thus taken place in this embodiment only on the side surfaces.
• FIG. 3 shows a schematic side view of a further embodiment of the optoelectronic component.
• the embodiment shown in FIG. 3 may, for example, be apparent from the embodiment shown in FIG. 1, in that a lacquer layer 8 was applied to the diffusion barrier 12, which was deposited by means of atmospheric pressure plasma.
• the lacquer layer 8 can serve, for example, as scratch protection for the diffusion barrier 12.
• FIG. 4 shows a schematic side view of a further exemplary embodiment of the optoelectronic component.
• the embodiment illustrated in FIG. 4 may be apparent, for example, from the embodiment shown in FIG. 2, in that a diffusion barrier 12 is provided on the lacquer layer 8 by means of
• the lacquer layer 8 under the diffusion barrier 12 may, for example, the device during the deposition of Protect diffusion barrier 12 by means of atmospheric pressure plasma.
• FIG. 5 shows a schematic side view of a further embodiment of the optoelectronic component.
• This comprises the layer sequence substrate 1, conductive transparent layer 2, first electrode layer 3, the organic functional layer 4 arranged thereon, and subsequently the second electrode layer 5.
• the embodiment further comprises the contact 9 as well as the insulating layer 10 and that on the second electrode layer 5 arranged thin-film encapsulation 6.
• a second encapsulation layer 7 is applied on the thin-film encapsulation 6 and around the side surfaces of the layer stack.
• This second encapsulation layer 7 can serve for pre-encapsulation of the component as well as for planarization of the thin-film encapsulation 6.
• the second encapsulation layer 7 can comprise, for example, a transparent epoxide.
• the second encapsulation layer 7 is followed by a cover plate 11.
• the cover plate may, for example, be a glass substrate.
• cover plates 11 which are not transparent.
• the use of a cover plate 11 makes it possible to encapsulate large or large components quickly and efficiently on one or both main surfaces.
• the device is to the bottom over the substrate for Top over the cover plate and on the side surfaces over the diffusion barrier 12 completely encapsulated.

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• Physics & Mathematics (AREA)
• Optics & Photonics (AREA)
• Electroluminescent Light Sources (AREA)

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• 2008
  • 2008-07-14 DE DE102008033017A patent/DE102008033017A1/de not_active Withdrawn
• 2009
  • 2009-06-19 CN CN200980127652.9A patent/CN102099943B/zh active Active
  • 2009-06-19 US US13/054,397 patent/US8530928B2/en active Active
  • 2009-06-19 EP EP09775897.3A patent/EP2301092B1/de active Active
  • 2009-06-19 JP JP2011517746A patent/JP5579177B2/ja not_active Expired - Fee Related
  • 2009-06-19 WO PCT/DE2009/000858 patent/WO2010006571A1/de not_active Ceased
  • 2009-06-19 KR KR1020107025554A patent/KR101554763B1/ko not_active Expired - Fee Related

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