WO2010005265A3 - 태양전지 셀의 웨이퍼 제조장치 및 이를 이용한 웨이퍼 제조방법 - Google Patents

태양전지 셀의 웨이퍼 제조장치 및 이를 이용한 웨이퍼 제조방법 Download PDF

Info

Publication number
WO2010005265A3
WO2010005265A3 PCT/KR2009/003798 KR2009003798W WO2010005265A3 WO 2010005265 A3 WO2010005265 A3 WO 2010005265A3 KR 2009003798 W KR2009003798 W KR 2009003798W WO 2010005265 A3 WO2010005265 A3 WO 2010005265A3
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
battery cell
solar battery
mold
wafer manufacturing
Prior art date
Application number
PCT/KR2009/003798
Other languages
English (en)
French (fr)
Other versions
WO2010005265A2 (ko
Inventor
공종현
Original Assignee
주식회사 도시환경이엔지
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 도시환경이엔지 filed Critical 주식회사 도시환경이엔지
Priority to CN2009801268791A priority Critical patent/CN102089885B/zh
Publication of WO2010005265A2 publication Critical patent/WO2010005265A2/ko
Publication of WO2010005265A3 publication Critical patent/WO2010005265A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

본 발명은 발전효율을 높일 수 있도록 실리콘 웨이퍼의 밀도가 높은 태양전지 셀의 웨이퍼 제조장치와 이를 이용한 웨이퍼 제조방법에 관한 것이다. 본 발명에 따른 태양전지 셀의 웨이퍼 제조장치는 태양전지 셀을 제조하기 위한 웨이퍼의 형상에 대응하는 주형틀이 형성된 금형과, 상기 주형틀에 용융된 웨이퍼 원료가 충진되면, 상기 웨이퍼 원료를 상방으로 승강시킬 수 있도록 상기 금형에 승강 가능하게 설치되는 승강부재와, 상기 승강부재를 승강 또는 하강시키는 액튜에이터와, 상기 용융된 웨이퍼 원료가 경화되는 과정에서 압착되어 밀도가 높아지도록 상기 주형틀에 충진된 웨이퍼 원료를 가압하는 가압수단을 구비한다. 본 발명에 따른 태양전지 셀의 웨이퍼 제조장치 및 이를 이용한 웨이퍼 제조방법은 태양전지 셀의 제조비용을 최소화하고, 발전효율을 향상시킬 수 있기 때문에 태양광 발전시설의 보급비용을 현저히 줄일 수 있는 이점이 있다.
PCT/KR2009/003798 2008-07-10 2009-07-10 태양전지 셀의 웨이퍼 제조장치 및 이를 이용한 웨이퍼 제조방법 WO2010005265A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2009801268791A CN102089885B (zh) 2008-07-10 2009-07-10 太阳能电池单元的晶圆制造装置及使用该装置的晶圆制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080067240A KR100990513B1 (ko) 2008-07-10 2008-07-10 태양전지 셀의 웨이퍼 제조장치 및 이를 이용한 웨이퍼제조방법
KR10-2008-0067240 2008-07-10

Publications (2)

Publication Number Publication Date
WO2010005265A2 WO2010005265A2 (ko) 2010-01-14
WO2010005265A3 true WO2010005265A3 (ko) 2010-04-29

Family

ID=41507598

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/003798 WO2010005265A2 (ko) 2008-07-10 2009-07-10 태양전지 셀의 웨이퍼 제조장치 및 이를 이용한 웨이퍼 제조방법

Country Status (3)

Country Link
KR (1) KR100990513B1 (ko)
CN (1) CN102089885B (ko)
WO (1) WO2010005265A2 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108649003B (zh) * 2018-05-21 2020-09-11 厦门市信邦威科技有限公司 一种太阳能电池的晶圆制造装置
CN108447950B (zh) * 2018-05-21 2019-12-03 安徽省华腾农业科技有限公司 一种太阳能电池制造工艺

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980021635A (ko) * 1996-09-18 1998-06-25 윤덕용 부상응고법을 이용한 실리콘박판 형성 방법 및 장치
JP2001039774A (ja) * 1996-04-01 2001-02-13 Saint Gobain Ceramics & Plastics Inc セラミックウェーハーを作る方法
KR20030034190A (ko) * 2000-09-19 2003-05-01 샤프 가부시키가이샤 결정 박판의 제조 방법 및 결정 박판을 사용한 태양전지
KR20050057838A (ko) * 2003-12-11 2005-06-16 삼화전자공업 주식회사 태양전지용 Ｓｉ웨이퍼
US20070189956A1 (en) * 2003-12-22 2007-08-16 Scheuten Glasgroep Method for producing a monocrystalline cu(in,ga)se2powder, and mono-grain membrane solar cell containing said powder

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4882385B2 (ja) * 2006-01-19 2012-02-22 ヤマハ株式会社 熱電素子及び熱電モジュールの製造方法
JP4654344B2 (ja) 2006-02-01 2011-03-16 多摩川精機株式会社 ガスレートセンサの検出部構造
JP5060769B2 (ja) * 2006-11-07 2012-10-31 株式会社エヌ・ピー・シー ラミネート装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001039774A (ja) * 1996-04-01 2001-02-13 Saint Gobain Ceramics & Plastics Inc セラミックウェーハーを作る方法
KR19980021635A (ko) * 1996-09-18 1998-06-25 윤덕용 부상응고법을 이용한 실리콘박판 형성 방법 및 장치
KR20030034190A (ko) * 2000-09-19 2003-05-01 샤프 가부시키가이샤 결정 박판의 제조 방법 및 결정 박판을 사용한 태양전지
KR20050057838A (ko) * 2003-12-11 2005-06-16 삼화전자공업 주식회사 태양전지용 Ｓｉ웨이퍼
US20070189956A1 (en) * 2003-12-22 2007-08-16 Scheuten Glasgroep Method for producing a monocrystalline cu(in,ga)se2powder, and mono-grain membrane solar cell containing said powder

Also Published As

Publication number Publication date
CN102089885A (zh) 2011-06-08
WO2010005265A2 (ko) 2010-01-14
KR20100006917A (ko) 2010-01-22
CN102089885B (zh) 2013-05-29
KR100990513B1 (ko) 2010-10-29

Similar Documents

Publication Publication Date Title
CN106099202B (zh) 一种叠片软包装锂离子电池快速化成方法
WO2006053032A8 (en) Thermal process for creation of an in-situ junction layer in cigs
CN102856410B (zh) 弧形太阳能板及加工工艺
WO2010099863A3 (de) Beidseitig kontaktierte solarzellen sowie verfahren zu deren herstellung
MY170119A (en) Porous silicon electro-etching system and method
WO2008104301A3 (de) Hybride organische solarzellen mit von photoaktiven oberflächenmodifikatoren umgebenen halbleiter- nanopartikeln
WO2011060764A3 (de) Emitterbildung mit einem laser
WO2011002230A3 (ko) 태양전지 및 이의 제조방법
WO2008147113A3 (en) High efficiency solar cell, method of fabricating the same and apparatus for fabricating the same
WO2010005265A3 (ko) 태양전지 셀의 웨이퍼 제조장치 및 이를 이용한 웨이퍼 제조방법
WO2012091515A3 (ko) 리튬이차전지용 음극 활물질 및 그 제조방법, 이를 이용한 리튬이차전지
WO2010136162A3 (de) Verfahren zur herstellung eines solarmoduls
CN204216005U (zh) 一种等离子体刻蚀设备
MY159267A (en) Method for fabricating a three-dimensional thin-film semiconductor substrate from a template
WO2007005999A3 (en) Early contact, high cell density process
EP2434551A4 (en) PHOTOPILE AND METHOD FOR MANUFACTURING THE SAME
CN102286775A (zh) 能够快速换料的单晶炉及单晶炉快速换料方法
WO2010081533A3 (de) Verfahren und vorrichtung zur simultanen mikrostrukturierung und passivierung
CN201960673U (zh) 一种晶硅片多线切割机的装载机构
WO2010115953A3 (en) Method for producing a textured plate for a photovoltaic device
WO2011160786A3 (de) Verfahren zum herstellen eines dünnschichtsolarmoduls und dünnschichtsolarmodul
TW201124260A (en) Improved manufacturing process for silicone-on-glass fresnel lens.
KR101005091B1 (ko) 강화유리와 집광렌즈용 지그 부착 장치
CN201478286U (zh) 一种用于等离子体蚀刻制程的垫板
CN201530857U (zh) 一种磁控溅射设备的电池挂片箱

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200980126879.1

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09794671

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09794671

Country of ref document: EP

Kind code of ref document: A2