WO2009131063A1 - Si(1-v-w-x)CwAlxNv基材の製造方法、エピタキシャルウエハの製造方法、Si(1-v-w-x)CwAlxNv基材およびエピタキシャルウエハ - Google Patents
Si(1-v-w-x)CwAlxNv基材の製造方法、エピタキシャルウエハの製造方法、Si(1-v-w-x)CwAlxNv基材およびエピタキシャルウエハ Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 58
- 239000000463 material Substances 0.000 title claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 264
- 239000000203 mixture Substances 0.000 claims abstract description 85
- 230000007423 decrease Effects 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims description 61
- 238000004549 pulsed laser deposition Methods 0.000 claims description 20
- 239000013078 crystal Substances 0.000 description 49
- 239000002994 raw material Substances 0.000 description 46
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 45
- 229910010271 silicon carbide Inorganic materials 0.000 description 44
- 230000000052 comparative effect Effects 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- 229910052799 carbon Inorganic materials 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 6
- 230000003247 decreasing effect Effects 0.000 description 6
- 238000001451 molecular beam epitaxy Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
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- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000003776 cleavage reaction Methods 0.000 description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VZPPHXVFMVZRTE-UHFFFAOYSA-N [Kr]F Chemical compound [Kr]F VZPPHXVFMVZRTE-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
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- 229910003460 diamond Inorganic materials 0.000 description 1
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- 238000000171 gas-source molecular beam epitaxy Methods 0.000 description 1
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/18—After-treatment
- C23C4/185—Separation of the coating from the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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- C—CHEMISTRY; METALLURGY
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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Definitions
- the present invention relates to a method for producing a Si (1-vwx) C w Al x N v substrate, a method for producing an epitaxial wafer, a Si (1-vwx) C w Al x N v substrate, and an epitaxial wafer.
- Crystals are used as materials for semiconductor devices such as short-wavelength optical devices and power electronic devices. Such crystals are conventionally obtained by growing on a base substrate by a vapor phase growth method or the like.
- a Si (1-vwx) C w Al x N v base material has attracted attention as a base substrate used for growing such materials.
- a method for producing such a Si (1-vwx) C w Al x N v substrate for example, US Pat. No. 4,382,837 (Patent Document 1), US Pat. No. 6,086,672 (Patent Document 2) and Table 2005-506695 (Patent Document 3) may be mentioned.
- (SiC) (1-x) (AlN) x crystals are produced on Al 2 O 3 (sapphire) by heating and sublimating the raw material at 1900 ° C. to 2020 ° C. It is disclosed.
- the raw material is heated at 1810 ° C. to 2492 ° C. to heat the raw material on SiC (silicon carbide) at 1700 ° C. to 2488 ° C.
- SiC SiC
- AlN Molecular Beam Epitaxy
- Patent Documents 1 to 3 a (SiC) (1-x) (AlN) x crystal is grown on a heterogeneous substrate. Since the composition of the foreign substrate and (SiC) (1-x) (AlN) x crystals are different, different substrate and (SiC) (1-x) (AlN) x lattice constant and thermal expansion coefficient of the crystal is different from Yes. For this reason, there was a problem that the crystallinity of the (SiC) (1-x) (AlN) x crystal was poor.
- the SiC substrate of Patent Document 2 has a smaller difference in lattice constant and coefficient of thermal expansion from the (SiC) (1-x) (AlN) x crystal than the sapphire substrate and the Si substrate.
- SiC substrates are more expensive than sapphire and Si substrates. For this reason, there is a problem that a cost is required to manufacture the (SiC) (1-x) (AlN) x crystal.
- the present invention has been made in view of the above problems, and an object of the present invention is to provide a Si (1-vwx) C w Al x N v substrate manufacturing method that maintains high crystallinity and low cost.
- An epitaxial wafer manufacturing method, an Si (1-vwx) C w Al x N v substrate, and an epitaxial wafer are provided.
- Method for manufacturing a Si (1-vwx) C w Al x N v substrate includes the following steps. First, a heterogeneous substrate is prepared. Then, a Si (1-vwx) C w Al x N v layer (0 ⁇ v ⁇ 1, 0 ⁇ w ⁇ 1, 0 ⁇ x ⁇ 1, 0 ⁇ v + w + x ⁇ 1) having a main surface is formed on a heterogeneous substrate. Grown up. The composition ratio x + v located on the main surface in the Si (1-vwx) C w Al x N v layer is 0 ⁇ x + v ⁇ 1.
- the composition ratio x + v monotonously increases or monotonously decreases from the interface with the different substrate toward the main surface.
- the composition ratio x + v at the interface with the dissimilar substrate is closer to the material of the dissimilar substrate than the composition ratio x + v of the main surface.
- a Si (1-vwx) C w Al x N v layer located on the main surface, between the heterogeneous substrate A Si (1-vwx) C w Al x N v crystal having a composition ratio x + v between them is grown.
- Si (1-vwx) C w Al x N v layer located on the main surface and the dissimilar substrate can be alleviated. Therefore, Si (1-vwx) C w Al x N v composition ratio x + v to be positioned on the main surface of the layer, i.e. Si (1-vwx) composition ratio x + v for the purpose of producing C w Al x N v
- the crystallinity of the crystal can be improved.
- the Si (1-vwx) C w Al x N v crystal having a composition ratio x + v between them is positioned on the main surface of the Si (1-vwx) C w Al x N v layer without increasing the thickness.
- the crystallinity of the Si (1-vwx) C w Al x N v crystal having the composition ratio x + v can be improved. For this reason, it is not necessary to manufacture Si (1-vwx) C w Al x N v crystal having a composition ratio x + v between them as a base substrate. For this reason, it is possible to reduce the cost required for producing the Si (1-vwx) C w Al x N v crystal intended to be produced.
- the crystallinity of Si (1-vwx) C w Al x N v crystal having a composition ratio x + v intended to be manufactured can be improved. Further, when manufacturing a Si (1-vwx) C w Al x N v base material having a desired crystalline Si (1-vwx) C w Al x N v crystal, the cost can be reduced. . Therefore, a Si (1-wx) C w (AlN) x base material that achieves both high crystallinity and low cost can be manufactured.
- the composition ratio x + v of the layer near the dissimilar substrate is increased or decreased in order from the composition ratio x + v of the layer positioned on the main surface.
- Si (1-vwx) C w Al x N v layer including such a plurality of layers can be grown by changing the raw material for forming each layer. Therefore, a Si (1-vwx) C w Al x N v layer that achieves both high crystallinity and low cost can be easily manufactured.
- Si (1-vwx) C w Al x N is grown by pulsed laser deposition (PLD).
- PLD pulsed laser deposition
- the raw material of the Si (1-vwx) C w Al x N v layer can be irradiated with a laser to generate plasma, and this plasma can be supplied onto a different substrate. That is, the Si (1-vwx) C w Al x N v layer can be grown in a non-equilibrium state. Since this growth condition is not a stable state such as an equilibrium state, Si can bond to both C (carbon) and N (nitrogen), and Al (aluminum) can bond to both C and N. It is. Therefore, it is possible to grow a Si (1-vwx) C w Al x N v layer in which four elements of Si, C, Al and N are mixed.
- the method for producing an epitaxial wafer of the present invention produces an Si (1-vwx) C w Al x N v substrate by the method for producing an Si (1-vwx) C w Al x N v substrate described above. And an Al (1-yz) Ga y In z N layer (0 ⁇ y ⁇ 1, 0 ⁇ z ⁇ 1, 0 ⁇ y + z ⁇ 1) on the Si (1-vwx) C w Al x N v layer And a step of growing the substrate.
- a highly crystalline Si (1-vwx) C w Al x N v layer can be produced. Therefore, a highly crystalline Al (1-yz) Ga y In z N layer can be grown on the Si (1-vwx) C w Al x N v layer.
- the lattice matching and the thermal expansion coefficient of the Al (1-yz) Ga y In z N layer have a small difference from the lattice matching and the thermal expansion coefficient of the Si (1-vwx) C w Al x N v layer. Therefore, the crystallinity of the Al (1-yz) Ga y In z N layer can be improved. Further, since the cost required for manufacturing the Si (1-vwx) C w Al x N v layer is low, the epitaxial wafer can be manufactured at a reduced cost.
- the Si (1-vwx) C w Al x N v substrate of the present invention has a Si (1-vwx) C w Al x N v layer (0 ⁇ v ) having a main surface and a back surface opposite to the main surface.
- ⁇ 1, 0 ⁇ w ⁇ 1, 0 ⁇ x ⁇ 1, 0 ⁇ v + w + x ⁇ 1) is a Si (1-vwx) C w Al x N v substrate.
- the composition ratio x + v located on the main surface in the Si (1-vwx) C w Al x N v layer is 0 ⁇ x + v ⁇ 1.
- the Si (1-vwx) C w Al x N v layer is characterized in that x + v monotonously increases or monotonously decreases from the back surface to the main surface.
- the Si (1-vwx) C w Al x N v base material of the present invention it is high by being manufactured by the above-described manufacturing method of the Si (1-vwx) C w Al x N v base material of the present invention. It is possible to realize a Si (1-vwx) C w Al x N v substrate that maintains crystallinity and low cost.
- the substrate further includes a foreign substrate having a main surface, the back surface side of the Si (1-vwx) C w Al x N v layer, the heterogeneous substrate main In the Si (1-vwx) C w Al x N v layer formed so as to be in contact with the front surface, the composition ratio x + v on the back surface is closer to the material of the dissimilar substrate than the composition ratio x + v on the main surface.
- Si (1-vwx) C w Al x N v layer when a small thickness, such as Si (1-vwx) of C w Al x N v substrate may further comprise a foreign substrate if necessary Good.
- the Si (1-vwx) C w Al x N v layer preferably includes a plurality of layers.
- the epitaxial wafer of the present invention is formed on the main surface of the Si (1-vwx) C w Al x N v base material described above and the Si (1-vwx) C w Al x N v layer. And an Al (1-yz) Ga y In z N layer (0 ⁇ y ⁇ 1, 0 ⁇ z ⁇ 1, 0 ⁇ y + z ⁇ 1).
- an Al (1-yz) Gay y In z N layer is formed on a highly crystalline Si (1-vwx) C w Al x N v layer. For this reason, the crystallinity of the Al (1-yz) Ga y In z N layer can be improved.
- the lattice matching and the thermal expansion coefficient of the Al (1-yz) Ga y In z N layer have a small difference from the lattice matching and the thermal expansion coefficient of the Si (1-vwx) C w Al x N v layer. Therefore, the crystallinity of the Al (1-yz) Ga y In z N layer can be improved. Further, since the cost required for manufacturing the Si (1-vwx) C w Al x N v layer is low, an epitaxial wafer with reduced costs can be realized.
- Si (1-vwx) C w Al x N v substrate manufacturing method, epitaxial wafer manufacturing method, Si (1-vwx) C w Al x N v substrate and epitaxial wafer of the present invention thermal expansion is achieved. difference in rate, it is possible to relax the lattice mismatch, high to maintain the crystallinity and Si (1-vwx) maintaining a low cost C w Al x N v Si ( 1-vwx) with a crystal C w An Al x N v substrate can be realized.
- the Si (1-vwx) C w Al x N v substrate according to the first embodiment of the present invention is a cross-sectional view schematically showing.
- the PLD device that can be used in the production of Si (1-vwx) C w Al x N v substrate according to the first embodiment of the present invention is a diagram schematically showing.
- Growing a Si (1-vwx) C w Al x N v layer on the hetero substrate in the first embodiment of the present invention is a diagram schematically showing.
- the Si (1-vwx) C w Al x N v substrate according to the second embodiment of the present invention is a cross-sectional view schematically showing.
- the Si (1-vwx) C w Al x N v layer on the hetero substrate in a second embodiment of the present invention is a diagram schematically showing.
- the Si (1-vwx) C w Al x N v substrate according to a third embodiment of the present invention is a cross-sectional view schematically showing.
- the Si (1-vwx) C w Al x N v substrate according to a fourth embodiment of the present invention is a cross-sectional view schematically showing. It is sectional drawing which shows schematically the epitaxial wafer in Embodiment 5 of this invention.
- the present invention Examples 1 and Si in 2 (1-vwx) C w Al x N v substrate is a sectional view schematically showing.
- FIG. 1 is a cross-sectional view schematically showing a Si (1-vwx) C w Al x N v substrate in the present embodiment.
- Si (1-vwx) C w Al x N v base material 10a in the present embodiment will be described.
- Si in the present embodiment (1-vwx) C w Al x N v substrate 10a includes a dissimilar substrate 11, formed on the main surface 11a of the different type of substrate 11 Si (1- vwx) C w Al x N v layer 12 (0 ⁇ v ⁇ 1, 0 ⁇ w ⁇ 1, 0 ⁇ x ⁇ 1, 0 ⁇ v + w + x ⁇ 1).
- Si (1-vwx) C w Al x N v layer 12 the composition ratio 1-vwx is the molar ratio of Si
- w is the molar ratio of C
- x is the molar ratio of Al.
- V is the molar ratio of N.
- the heterogeneous substrate 11 is a material different from the Si (1-vwx) C w Al x N v layer 12 (0 ⁇ v ⁇ 1, 0 ⁇ w ⁇ 1, 0 ⁇ x ⁇ 1, 0 ⁇ v + w + x ⁇ 1),
- a Si substrate, a SiC substrate, an AlN substrate, or the like can be used.
- the heterogeneous substrate it is preferable to use a Si substrate and a sapphire substrate from the viewpoint of low cost, and it is more preferable to use a Si substrate from the viewpoint of easy workability.
- the different type substrate 11 preferably has a large diameter, for example, a size of 1 inch or more, and preferably 2 inches or more.
- a dissimilar substrate 11 having a size of 4 inches or 6 inches may be used.
- the Si (1-vwx) C w Al x N v layer 12 has a main surface 12a and a back surface 12b opposite to the main surface 12a. Back surface 12b is in contact with the main surface 11a of the different type of substrate 11, located at the interface between the Si (1-vwx) C w Al x N v layer 12 and the dissimilar substrate 11.
- the composition ratio x + v monotonously increases or monotonously decreases from the interface (back surface 12b) with the heterogeneous substrate 11 toward the main surface 12a.
- monotonically increasing means that the composition ratio x + v is always the same or increased from the back surface 12b of the Si (1-vwx) C w Al x N v layer 12 toward the main surface 12a (in the growth direction).
- the main surface 12a has a higher composition ratio x + v than the back surface 12b. That is, the monotonous increase does not include a portion that decreases in this growth direction.
- the monotonic decrease means that the composition ratio x + v is always the same or decreased from the back surface 12b of the heterogeneous substrate 11 toward the main surface 12a (in the growth direction), and the main surface 12a is more composing than the back surface 12b. It means that the ratio is low. That is, the monotonous decrease does not include a portion that increases toward this growth direction.
- Si (1-vwx) C w Al x N v composition ratio of the interface (back side 12b) between the dissimilar substrate 11 in the layer 12 x + v is close to the material of the different type of substrate 11 than the composition ratio x + v of the main surface 12a.
- the heterogeneous substrate 11 is a Si substrate or a SiC substrate
- the composition ratio x + v of the Si (1-vwx) C w Al x N v layer 12 monotonously increases.
- the heterogeneous substrate 11 is, for example, an AlN substrate
- the composition ratio x + v of the Si (1-vwx) C w Al x N v layer 12 is monotonously decreased.
- the composition ratio x + v located on the main surface 12a is 0 ⁇ x + v ⁇ 1. That is, the Si (1-vwx) C w Al x N v crystal located on the main surface 12a of the Si (1-vwx) C w Al x N v layer 12 contains four elements of Si, C, Al, and N. It is out.
- a Si (1-vwx) C w Al x N v crystal containing four elements constituting a covalent bond that is stronger than an ionic bond has a mechanically harder property than AlN.
- FIG. 2 is a schematic view schematically showing the available PLD apparatus for the production of Si (1-vwx) C w Al x N v substrate according to the present embodiment.
- FIG. 3 is a schematic diagram schematically showing a process of growing a Si (1-vwx) C w Al x N v layer on a heterogeneous substrate in the present embodiment.
- the PLD apparatus 100 includes a vacuum chamber 101, a laser light source 102, a raw material 103, a stage 104, a pulse motor 105, a substrate holder 106, a heater (not shown), and a control.
- Unit 107 a reflection high-energy electron diffraction apparatus (RHEED) 108, and a gas supply unit 109.
- RHEED reflection high-energy electron diffraction apparatus
- a laser light source 102 is disposed outside the vacuum chamber 101.
- the laser light source 102 can emit laser light.
- a raw material 103 serving as a target can be disposed in the vacuum chamber 101 at a position where the laser light source 102 emits laser light.
- the raw material 103 can be placed on the stage 104.
- the pulse motor 105 can drive the stage 104.
- the substrate holding unit 106 can hold the heterogeneous substrate 11 that is a base substrate.
- the heater heats the heterogeneous substrate 11 held by the substrate holding unit 106.
- the control unit 107 can control operations of the laser light source 102 and the pulse motor 105.
- the RHEED 108 can measure the thickness of the Si (1-vwx) C w Al x N v layer 12 grown on the heterogeneous substrate 11 by monitoring the vibration.
- the gas supply unit 109 can supply gas into the vacuum chamber 101.
- the PLD device 100 may include various elements other than those described above, the illustration and description of these elements are omitted for convenience of description.
- the raw material 103 of the Si (1-vwx) C w Al x N v layer 12 is prepared.
- the composition ratio x + v of the Si (1-vwx) C w Al x N v layer 12 can be controlled by the molar ratio of mixing SiC and AlN in the raw material 103.
- a raw material 103 is prepared so that the molar ratio of AlN in which SiC and AlN are mixed from one end to the other end is monotonously increased or monotonously decreased.
- SiC and AlN are mixed so that a Si (1-vwx) C w Al x N v crystal having a composition ratio x + v (composition ratio x + v located on the main surface 12a) intended to be produced is obtained. Adjust the molar ratio.
- the raw material 103 for example, a sintered body in which SiC and AlN are mixed can be used. The raw material 103 thus prepared is set on the stage 104 shown in FIG.
- the heterogeneous substrate 11 is set on the surface of the substrate holding unit 106 installed in the vacuum chamber 101 at a position facing the raw material 103.
- the heterogeneous substrate 11 is heated.
- the surface temperature of the heterogeneous substrate 11 is heated to less than 550 ° C., for example.
- the surface temperature of the heterogeneous substrate 11 is preferably less than 550 ° C., and more preferably 540 ° C. or less.
- This heating is performed by, for example, a heater.
- substrate 11 is not specifically limited to a heater, For example, other methods, such as flowing an electric current, may be used. Note that this step may be omitted.
- the raw material 103 is irradiated with laser light emitted from the laser light source 102.
- the molar ratio of AlN in which SiC and AlN are mixed from one end to the other end monotonously increases or decreases monotonically, and Si (1-vwx) having a composition ratio x + v intended to be produced by the other end.
- the raw material 103 which becomes C w Al x N v crystal is prepared. Therefore, as shown in FIG. 3, laser light is irradiated from one end (left end in FIG. 3) to the other end (right end in FIG. 3) (in the direction of the arrow in FIG. 3) of the raw material 103.
- the raw material 103 from one end to the other end of the raw material 103 is deposited on the heterogeneous substrate 11 as the Si (1-vwx) C w Al x N v layer 12, it corresponds to the molar ratio of the one end.
- Si (1-vwx) C w Al x N v crystal with composition ratio x + v grows so as to be located at the interface of heterogeneous substrate 11, and Si (1-vwx) C with composition ratio x + v according to the molar ratio of the other end.
- the w Al x N v crystal grows so as to be located on the main surface of the Si (1-vwx) C w Al x N v layer 12.
- a KrF (krypton fluoride) excimer laser having an emission wavelength of 248 nm, a pulse repetition frequency of 10 Hz, and an energy per pulse of 1 to 3 J / shot can be used.
- other lasers such as an ArF (argon fluoride) excimer laser having an emission wavelength of 193 nm can also be used.
- the vacuum chamber 101 is evacuated to about 1 ⁇ 10 ⁇ 3 Torr to 1 ⁇ 10 ⁇ 6 Torr or less, for example. Thereafter, the inside of the vacuum chamber 101 is brought into an atmosphere of an inert gas such as argon (Ar) or nitrogen by the gas supply unit 109. If the inside of the vacuum chamber 101 is a nitrogen atmosphere, nitrogen can be replenished during the growth of the Si (1-vwx) C w Al x N v layer 12. Further, if the inside of the vacuum chamber is an inert gas atmosphere, since only the raw material 103 is used during the growth of the Si (1-vwx) C w Al x N v layer 12, the value of x + v can be easily controlled.
- an inert gas such as argon (Ar) or nitrogen
- a laser having a short wavelength As described above, it is preferable to use a laser having a short wavelength as described above.
- a short wavelength laser is used, the absorption coefficient increases, so that most of the laser light is absorbed near the surface of the raw material 103.
- ablation plasma plural
- Ablation particles contained in the plasma move to the heterogeneous substrate 11 while changing the state due to recombination, collision with atmospheric gas, reaction, and the like. Then, each particle reaching the different type of substrate 11 diffuse heterogeneous substrate 11, by entering the deployable site, Si (1-vwx) C w Al x N v layer 12 is formed.
- the sites where each particle can be placed are as follows. Sites where Al atoms can be arranged are sites that bond with C atoms or N atoms. Sites where Si atoms can be arranged are sites that combine with C atoms or N atoms. The site where C atoms can be arranged is a site that binds to Al atoms or Si atoms. The site at which N atoms can be arranged is a site that binds to Al atoms or Si atoms.
- the thickness of the Si (1-vwx) C w Al x N v layer 12 to be grown can be monitored by vibration of the RHEED 108 attached to the vacuum chamber 101.
- Si (1-vwx) C w Al x N v can be grown layer 12, Si (1-vwx) shown in FIG. 1 C w
- the Al x N v substrate 10a can be manufactured.
- Si (1-vwx) C w Al x N v layer 12 has been described, but the present invention is not particularly limited thereto.
- Si (1-vwx ) can be obtained by MOCVD (Metal Organic Chemical Vapor Deposition) method using pulse supply method, MBE (Molecular Beam Epitaxy) method using gas source method, sputtering method, etc. )
- MOCVD Metal Organic Chemical Vapor Deposition
- MBE Molecular Beam Epitaxy
- a C w Al x N v layer 12 may be grown.
- the Si (1-vwx) C w Al x N v layer 12 can be grown by controlling the gas flow rate to be changed.
- the Si (1-vwx) C w Al x N v layer 12 can be grown by controlling the opening and closing of the cell and the heating temperature.
- the Si (1-vwx) C w Al x N v layer 12 can be grown by controlling the target.
- the Si (1-vwx) C w Al x N v substrate 10a and the manufacturing method thereof according to the present embodiment are the main surface 12a in the Si (1-vwx) C w Al x N v layer 12.
- the composition ratio x + v located at 0 is 0 ⁇ x + v ⁇ 1, and in the Si (1-vwx) C w Al x N v layer 12, the composition is directed from the interface (back surface 12 b) with the dissimilar substrate 11 toward the main surface 12 a.
- the ratio x + v monotonously increases or monotonously decreases, and in the Si (1-vwx) C w Al x N v layer 12, the composition ratio x + v of the interface (back surface 12b) with the heterogeneous substrate 11 is greater than the composition ratio x + v of the main surface 12a. Is also close to the material of the heterogeneous substrate 11.
- the composition ratio x + v for the purpose of producing towards Si (1-vwx) C w Al x N v crystals are grown Si (1-vwx) C w Al x N v layer 12 so as to approach gradually the composition ratio x + v.
- the Si (1-vwx) C w Al x N v layer 12 is grown so that the composition ratio x + v changes monotonously with respect to the growth direction of the Si (1-vwx) C w Al x N v layer 12. ing.
- the Si (1-vwx) C w Al x N v crystal having the composition ratio x + v intended to be manufactured is grown so as to be located on the main surface 12a, thereby making the Si intended for the manufacture.
- (1-vwx) C w Al x N v difference crystal lattice mismatch and thermal expansion coefficient between the hetero-substrate 11 can be gradually relieve.
- the Si (1-vwx) C w Al x N v layer 12 has a composition ratio x + v located on the main surface 12a, that is, Si having a composition ratio x + v intended to be manufactured.
- the crystallinity of the Si (1-vwx) C w Al x N v crystal having the composition ratio x + v located on the main surface 12 a can be improved. For this reason, it is not necessary to manufacture Si (1-vwx) C w Al x N v crystal having a composition ratio x + v between them as a base substrate. For this reason, it is possible to reduce the cost required for producing the Si (1-vwx) C w Al x N v crystal intended to be produced.
- the crystallinity of the Si (1-vwx) C w Al x N v crystal having the composition ratio x + v intended to be manufactured can be improved.
- the cost can be reduced. it can. Therefore, it is possible to manufacture a highly crystalline and a low cost and compatible with Si (1-vwx) C w Al x N v substrate.
- the Si (1-vwx) C w Al x N v layer 12 is preferably grown by the PLD method.
- the raw material 103 of the Si (1-vwx) C w Al x N v layer 12 is irradiated with a laser to generate plasma, and this plasma can be supplied onto the heterogeneous substrate 11. That is, the Si (1-vwx) C w Al x N v layer 12 can be grown in a non-equilibrium state. Since the non-equilibrium state is not as stable as the equilibrium state, Si can bond to both C and N, and Al can bond to both C and N. Therefore, it is possible to grow the Si (1-vwx) C w Al x N v layer 12 in which four elements of Si, C, Al, and N are mixed.
- the PLD method uses the Si (1-vwx) in this embodiment. ) it is suitable for the production method of C w Al x N v substrate 10a.
- Si (1-vwx) C w Al x N v layer is grown in an equilibrium state, since SiC and AlN are stable, Si and C are bonded, and Al and N are bonded. Therefore, the SiC layer and the AlN layer often grow in a layered state, or grow so that the aggregated AlN layers are scattered in the SiC layer.
- the Si (1-vwx) C w Al x N v layer 12 grown by the PLD method is composed of the SiC diffraction peak and the AlN diffraction peak measured by the X-ray diffraction (XRD) method.
- the Si (1-vwx) C w Al x N v substrate 10a including the Si (1-vwx) C w Al x N v layer 12 having a diffraction peak between the two can be realized.
- the diffraction peak of each material measured by the XRD method is a unique value.
- the target is copper (Cu)
- the tube voltage is 45 kV
- the tube current is 40 mA
- the measurement method is 2 ⁇ - ⁇
- the angular resolution is 0.001 deg step
- the AlN (002) plane The diffraction peak of SiC (102) plane appears near 35.72 deg.
- the diffraction peak of the Si (1-vwx) C w Al x N v layer 12 produced by the PLD method under this condition appears between 35.72 deg and 36.03 deg.
- the Si (1-vwx) C w Al x N v layer 12 grown in an equilibrium state detects only the SiC diffraction peak and the AlN diffraction peak when measured by the XRD method. There is no diffraction peak between the SiC diffraction peak and the AlN diffraction peak. However, there is a case where a diffraction peak having an error level such as noise occurs between the SiC diffraction peak and the AlN diffraction peak.
- the heterogeneous substrate 11 is preferably a Si substrate.
- Si substrates are the mainstream of current electronic materials, and processing techniques such as etching have been established.
- the Si substrate has a high cleavage property and is easily etched with an acid. For this reason, the process for reducing the thickness of the Si substrate and the process for removing the Si substrate can be easily performed.
- the Si (1-vwx) C w Al x N v base material 10a is used for producing a light emitting device, the cleavage property of the Si substrate is very important. Therefore, it is possible to manufacture an easy Si (1-vwx) C w Al x N v substrate 10a of workability.
- Si substrates are less expensive than SiC substrates, sapphire substrates, and the like. Therefore, it is possible to reduce the cost required for manufacturing a Si (1-vwx) C w Al x N v substrate 10a.
- the Si (1-vwx) C w Al x N v layer 12 by growing in PLD method, it is possible to grow a Si (1-vwx) C w Al x N v layer 12 at a lower temperature. For this reason, since deterioration of the Si substrate can be suppressed, a large-area Si (1-vwx) C w Al x N v layer 12 can be grown.
- the Si (1-vwx) C w Al x N v substrate 10a manufactured by the method for manufacturing the Si (1-vwx) C w Al x N v substrate 10a in the present embodiment has high crystallinity. It is compatible with low cost. For this reason, functional devices utilizing various magnetoresistance effects such as tunnel magnetoresistive elements and giant magnetoresistive elements, light emitting elements such as light emitting diodes and laser diodes, rectifiers, bipolar transistors, field effect transistors (FETs), spin FETs It can be suitably used for electronic elements such as HEMT (High Electron Mobility Transistor), temperature sensors, pressure sensors, radiation sensors, semiconductor sensors such as visible-ultraviolet light detectors, and SAW devices.
- HEMT High Electron Mobility Transistor
- FIG. 4 is a cross-sectional view schematically showing a Si (1-vwx) C w Al x N v substrate according to the present embodiment.
- Si (1-vwx) C w Al x N v substrate 10b according to the present embodiment is basically provided with the same structure as in the first embodiment, Si (1 -vwx) C w Al x N v layer 12 is different in that it includes a plurality of layers.
- the Si (1-vwx) C w Al x N v layer 12 includes a first layer 13, a second layer 14, a third layer 15, and a first layer 15. 4 layer 16, fifth layer 17, and sixth layer 18.
- the first, second, third, fourth, fifth and sixth layers 13, 14, 15, 16, 17 and 18 are stacked on the heterogeneous substrate 11 in this order.
- the composition ratio x + v of the first, second, third, fourth, fifth, and sixth layers 13, 14, 15, 16, 17, and 18 is larger or smaller in this order.
- the heterogeneous substrate 11 is an AlN substrate
- the composition ratio x + v of the first, second, third, fourth, fifth and sixth layers 13, 14, 15, 16, 17 and 18 is in this order. small.
- the composition ratio x + v of the first, second, third, fourth, fifth and sixth layers 13, 14, 15, 16, 17 and 18 is In this order.
- FIG. 5 is a schematic diagram schematically showing a process of growing a Si (1-vwx) C w Al x N v layer on a heterogeneous substrate in the present embodiment.
- the manufacturing method of the Si (1-vwx) C w Al x N v substrate 10b in the present embodiment is basically the same as that of the Si (1-vwx) C w Al x N v substrate 10a in the first embodiment. Although the same structure as the manufacturing method was provided, it differs in the process of preparing the raw material 103, and the process of irradiating the raw material 103 with the laser beam.
- the step of preparing the raw material 103 two or more types of materials having different molar ratios for mixing SiC and AlN are prepared.
- the plurality of materials are set on the stage 104 shown in FIG. At this time, it is preferable to arrange them in order of increasing (or decreasing order) molar ratio of AlN in which SiC and AlN are mixed.
- the composition ratio x + v of the Si (1-vwx) C w Al x N v layer 12 is easily grown so as to monotonously increase or monotonously decrease.
- a plurality of materials may be replaced in the vacuum chamber 101 with the laser beam irradiation direction constant. Also in this case, the plurality of materials can be easily replaced by arranging them in order of increasing AlN molar ratio among the plurality of materials.
- the raw material 103 may be a material in which the molar ratio of SiC and AlN changes stepwise in one sintered body as shown in FIG.
- the raw material 103 is made of a material to be the Si (1-vwx) C w Al x N v layer 12 having a composition ratio x + v close to the heterogeneous substrate 11.
- the laser beam up to the material (in the direction of the arrow in FIG. 5) to be the Si (1-vwx) C w Al x N v layer 12 (sixth layer 18 in this embodiment ) having the composition ratio x + v to be manufactured.
- the first, second, third, fourth, fifth, and sixth layers 13, 14, 15, 16, 17, and 18 are placed on the dissimilar substrate 11 according to the molar ratio of each material of the raw material 103. It can be grown up sequentially.
- the Si (1-vwx) C w Al x N v layer 12 includes six layers. However, the number of layers is not particularly limited as long as it is two or more. Of the first, second, third, fourth, fifth and sixth layers 13, 14, 15, 16, 17 and 18, the composition ratio x + v of the first layer 13 and the sixth layer 18 As long as the composition ratio x + v is different, layers having the same composition may be included.
- Si (1-vwx) C w Al x N v substrate 10b and a manufacturing method thereof in the present embodiment Si (1-vwx) C w Al x N v layer 12 includes a plurality Contains layers of.
- the composition ratio x + v of the layer at a position close to the dissimilar substrate 11 (on the back surface 12b) is gradually increased or decreased from the composition ratio x + v of the layer positioned on the main surface 12a.
- the Si (1-vwx) C w Al x N v layer 12 including such a plurality of layers is grown by preparing a raw material 103 including a plurality of materials in order to form each layer. Can do. Therefore, it is possible to easily manufacture the Si (1-vwx) C w Al x N v layer 12 that has both high crystallinity and low cost.
- the Si (1-vwx) C w Al x N v base material 10b in the present embodiment for example, a Si substrate is used as the heterogeneous substrate 11 and Si (1-vwx) C w Al x is used.
- the N v layer 12 is a SiC layer
- the second layer 14 is Si (1-vwx) C w Al x N v (0 ⁇ v ⁇ 1, 0 ⁇ w ⁇ 1, 0 ⁇ x ⁇ 1, 0 ⁇ v + w + x ⁇ 1) layers can be produced.
- the crystallinity of the Si (1-vwx) C w Al x N v (0 ⁇ v ⁇ 1, 0 ⁇ w ⁇ 1, 0 ⁇ x ⁇ 1, 0 ⁇ v + w + x ⁇ 1) layer as the second layer 14 is As a comparative example, Si (1-vwx) C w Al x N v (0 ⁇ v ⁇ 1, 0 ⁇ w ⁇ 1, 0 ⁇ x ⁇ 1, 0 ⁇ v + w + x ⁇ ) with the same composition ratio x + v grown on a SiC substrate 1) Almost the same as the crystallinity of the layer.
- Si (1-vwx) C w Al x N v (0 ⁇ v ⁇ 1
- the crystallinity of the 0 ⁇ w ⁇ 1, 0 ⁇ x ⁇ 1, 0 ⁇ v + w + x ⁇ 1) layer is the same.
- the Si (1-vwx) C w Al x N v layer 12 is produced by forming the SiC layer as the first layer 13 rather than the SiC substrate as the heterogeneous substrate necessary for crystal growth. Cost can be reduced.
- the Si (1-vwx) C w Al x N v crystal located on the main surface 12a of the Si (1-vwx) C w Al x N v layer 12 contains four elements of Si, C, Al, and N.
- the back surface 12b may be a crystal of two elements such as SiC and AlN.
- FIG. 6 is a cross-sectional view schematically showing a Si (1-vwx) C w Al x N v substrate according to the present embodiment.
- Si (1-vwx) C w Al x N v substrate 10c in the present embodiment is different from Si (1-vwx) C w Al x N v substrate 10a in the first embodiment. At least the heterogeneous substrate 11 is removed.
- Si (1-vwx) in this embodiment C w Al x N v a method for manufacturing the substrate 10c.
- the Si (1-vwx) C w Al x N v substrate 10a shown in FIG. 1 is produced according to the method for producing the Si (1-vwx) C w Al x N v substrate 10a in the first embodiment. .
- the heterogeneous substrate 11 is removed. Incidentally, it may be removed only dissimilar substrate 11, different type of substrate 11 and Si (1-vwx) C w Al x In N v layer 12 a portion including the surface in contact with the different type of substrate 11 may be removed .
- the removal method is not particularly limited, and for example, a chemical removal method such as etching, a mechanical removal method such as cutting, grinding, or cleavage can be used.
- Cutting refers to mechanically removing at least the dissimilar substrate 11 from the Si (1-vwx) C w Al x N v layer 12 with a slicer having an outer peripheral edge of an electrodeposited diamond wheel. Grinding refers to scraping in the thickness direction by contacting the surface while rotating the grindstone.
- Cleaving refers to dividing the heterogeneous substrate 11 along the crystal lattice plane.
- a step of removing the substrate 11 is further provided.
- the Si (1-vwx) C w Al x N v layer 12 that does not include the heterogeneous substrate 11 and has both high crystallinity and low cost.
- Figure 7 is a cross-sectional view schematically showing a Si (1-vwx) C w Al x N v substrate according to the present embodiment.
- Si (1-vwx) C w Al x N v substrate 10d in the present embodiment is different from Si (1-vwx) C w Al x N v substrate 10b in the second embodiment. At least the heterogeneous substrate 11 is removed.
- Si (1-vwx) in this embodiment C w Al x N v a method for manufacturing the substrate 10d.
- the heterogeneous substrate 11 is removed. Only the heterogeneous substrate 11 may be removed, and the first, second, third, fourth and fifth layers 13 of the heterogeneous substrate 11 and the Si (1-vwx) C w Al x N v layer 12, Any layer of 14, 15, 16 and 17 may be removed. Since the removal method is the same as in Embodiment 3, the description thereof will not be repeated.
- a step of removing the substrate 11 is further provided.
- the Si (1-vwx) C w Al x N v layer 12 that does not include the heterogeneous substrate 11 and has both high crystallinity and low cost.
- FIG. 8 is a cross-sectional view schematically showing an epitaxial wafer in the present embodiment. With reference to FIG. 8, epitaxial wafer 20 in the present embodiment will be described.
- the epitaxial wafer 20 includes an Si (1-vwx) C w Al x N v substrate 10b and a Si (1-vwx) C w Al x N v substrate 10b according to the second embodiment. And an Al (1-yz) Ga y In z N (0 ⁇ y ⁇ 1, 0 ⁇ z ⁇ 1, 0 ⁇ y + z ⁇ 1) layer 21 formed thereon.
- the epitaxial wafer 20 includes the heterogeneous substrate 11, the Si (1-vwx) C w Al x N v layer 12 formed on the heterogeneous substrate 11, and the Si (1-vwx) C w Al x N. an Al (1-yz) Ga y In z N layer 21 formed on the main surface 12 a of the v layer 12.
- the Si (1-vwx) C w Al x N v substrate 10b is manufactured according to the method for manufacturing the Si (1-vwx) C w Al x N v substrate 10b in the second embodiment.
- the Ga y In z N layer 21 is grown.
- the growth method is not particularly limited. For example, MOCVD method, HVPE (Hydride Vapor Phase Epitaxy) method, MBE method, vapor phase growth method such as sublimation method, liquid phase growth method and the like can be adopted.
- the epitaxial wafer 20 shown in FIG. 8 can be manufactured. Note that a step of removing the heterogeneous substrate 11 from the epitaxial wafer 20 may be further performed. Further, instead of the Si (1-vwx) C w Al x N v substrate 10b in the second embodiment, the Si (1-vwx) C w Al x N v substrate 10a in the first embodiment may be used. Good.
- An N layer 21 is formed.
- Si (1-vwx) C w Al x N v substrate 10b of Si (1-vwx) C w Al x N v Si (1-vwx) located on the main surface 12a in the layer 12 C w Al x N v crystals Has high crystallinity. Therefore, it is possible to grow the Si (1-vwx) C w Al x N v high crystallinity on the main surface 12a of the layer 12 of Al (1-yz) Ga y In z N layer 21.
- Al (1-yz) Ga y In z N layer is Si (1-vwx) C w Al x N v layer 21 difference in lattice matching of the differences and the thermal expansion coefficient is small, Al (1-yz ) The crystallinity of the Ga y In z N layer 21 can be improved.
- the cost of the Si (1-vwx) C w Al x N v substrate 10b is low, the manufacturing cost of the epitaxial wafer 20 can be reduced.
- Example 1 of the present invention basically, according to the method for manufacturing the Si (1-vwx) C w Al x N v substrate 10b in Embodiment 2, the PLD apparatus shown in FIG. A Si (1-vwx) C w Al x N v substrate 10a having a Si (1-vwx) C w Al x N v layer containing 3 layers in the same manner was manufactured. In addition, the composition ratio x + v intended to be manufactured was 0.9 Si 0.05 C 0.05 Al 0.45 N 0.45 . Incidentally, FIG. 9, the Si (1-vwx) C w Al x N v substrate according to the present invention Example 1 is a cross sectional view schematically showing.
- a raw material 103 for the Si (1-vwx) C w Al x N v layer 12 was prepared.
- This raw material 103 was prepared by the following method. Specifically, SiC powder and AlN powder were mixed in three molar ratios and pressed. In one, only SiC powder was pressed. These three kinds of mixtures were placed in a vacuum vessel, the vacuum vessel was evacuated to 10 ⁇ 6 Torr, and the atmosphere was filled with high-purity nitrogen gas. Thereafter, these three kinds of mixtures were fired at 2300 ° C. for 20 hours. Thereby, the raw material 103 which consists of three types of sintered compact materials was prepared. Thereafter, the raw material 103 made of these three kinds of materials was set on the stage 104 shown in FIG. 2 in order of increasing AlN molar ratio.
- This Si substrate had a (001) plane as a main surface 11a and a size of 2 inches.
- This heterogeneous substrate 11 was set on the surface of the substrate holding unit 106 installed in the vacuum chamber 101 and at a position facing the raw material 103.
- the temperature of the surface of the heterogeneous substrate 11 was heated to 600 ° C.
- the laser light emitted from the laser light source 102 was irradiated to the material having the lowest AlN molar ratio among the raw materials 103, that is, the SiC sintered body containing no AlN.
- the first layer 13 made of SiC and having a thickness of 100 nm was grown on the heterogeneous substrate 11.
- the material having the second lowest AlN molar ratio in the raw material 103 was irradiated with laser light.
- a second layer 14 made of Si 0.45 C 0.45 Al 0.05 N 0.05 and having a thickness of 100 nm was grown on the first layer 13.
- the material having the third lowest AlN molar ratio that is, the highest AlN molar ratio among the raw materials 103 was irradiated with laser light.
- the thicknesses of the first, second and third layers 13, 14 and 15 were monitored by vibration of the RHEED 108 attached to the vacuum chamber 101. Thereby, the Si (1-vwx) C w Al x N v layer 12 having a total thickness of 300 nm was grown.
- the inside of the vacuum chamber 101 was evacuated to 1 ⁇ 10 ⁇ 6 Torr and then the inside of the vacuum chamber 101 was set to a nitrogen atmosphere.
- Invention Example 2 is basically to produce the present invention the same manner as in Example 1, Si (1-vwx) C w Al x N v substrate, the second layer 14 is Si 0.45 C 0.45 Al 0.04 N 0.06 Was different in that.
- Invention Example 3 is basically to produce the present invention the same manner as in Example 1, Si (1-vwx) C w Al x N v substrate, the second layer 14 is Si 0.45 C 0.45 Al 0.06 N 0.04 Was different in that.
- Invention Example 4 is basically to produce the present invention the same manner as in Example 1, Si (1-vwx) C w Al x N v substrate, the third layer 15 is Si 0.05 C 0.05 Al 0.44 N 0.46 Was different in that.
- Invention Example 5 is basically to produce the present invention the same manner as in Example 1, Si (1-vwx) C w Al x N v substrate, the third layer 15 is Si 0.05 C 0.05 Al 0.46 N 0.44 Was different in that.
- Invention Example 6 is basically to produce the present invention the same manner as in Example 1, Si (1-vwx) C w Al x N v substrate, that the main surface is a Si substrate (111) surface was different.
- Invention Example 7 is basically was produced in the same manner as in Si (1-vwx) C w Al x N v substrate as Working Example 6, the second layer 14 is Si 0.45 C 0.45 Al 0.04 N 0.06 Was different in that.
- Inventive Example 8 is basically was produced in the same manner as in Si (1-vwx) C w Al x N v substrate as Working Example 6, the second layer 14 is Si 0.45 C 0.45 Al 0.06 N 0.04 Was different in that.
- Invention Example 9 is basically prepared in the same manner as in Si (1-vwx) C w Al x N v substrate as Working Example 6, the third layer 15 is Si 0.05 C 0.05 Al 0.44 N 0.46 Was different in that.
- Invention Example 10 is basically was produced in the same manner as in Si (1-vwx) C w Al x N v substrate as Working Example 6, the third layer 15 is Si 0.05 C 0.05 Al 0.46 N 0.44 Was different in that.
- Comparative Example 1 was basically the same as Example 1 of the present invention, but differed in that an AlN layer was grown on the Si substrate. That is, the raw material 103 was an AlN raw material.
- Comparative Example 2 was basically the same as Example 6 of the present invention, but differed in that an AlN layer was grown on the Si substrate. That is, the raw material 103 was an AlN raw material.
- the Si 0.05 C 0.05 (AlN) 0.9 layer of Examples 1 to 10 of the present invention and the AlN layer of Comparative Examples 1 and 2 are common in that the molar ratio of AlN (composition ratio x + v) is high. For this reason, even when Si 0.05 C 0.05 (AlN) 0.9 layer is grown instead of the AlN layer in Comparative Examples 1 and 2, the number of cracks can be estimated to be about 9, and the present invention examples 1 to 10 It cannot be reduced to the same level as the number of cracks in the Si 0.05 C 0.05 (AlN) 0.9 layer.
- the Si (1-vwx) C w Al x N v layer is grown so that the composition ratio x + v monotonously increases or monotonously decreases from the interface with the different substrate toward the main surface.
- the crystallinity of the Si (1-vwx) C w Al x N v layer can be improved.
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Abstract
Description
図1は、本実施の形態におけるSi(1-v-w-x)CwAlxNv基材を概略的に示す断面図である。始めに、図1を参照して、本実施の形態におけるSi(1-v-w-x)CwAlxNv基材10aを説明する。
図4は、本実施の形態におけるSi(1-v-w-x)CwAlxNv基材を概略的に示す断面図である。図4を参照して、本実施の形態におけるSi(1-v-w-x)CwAlxNv基材10bは、基本的には実施の形態1と同様の構成を備えているが、Si(1-v-w-x)CwAlxNv層12が複数の層を含んでいる点において異なっている。
図6は、本実施の形態におけるSi(1-v-w-x)CwAlxNv基材を概略的に示す断面図である。図6を参照して、本実施の形態におけるSi(1-v-w-x)CwAlxNv基材10cは、実施の形態1におけるSi(1-v-w-x)CwAlxNv基材10aから少なくとも異種基板11が除去されている。
図7は、本実施の形態におけるSi(1-v-w-x)CwAlxNv基材を概略的に示す断面図である。図7を参照して、本実施の形態におけるSi(1-v-w-x)CwAlxNv基材10dは、実施の形態2におけるSi(1-v-w-x)CwAlxNv基材10bから少なくとも異種基板11が除去されている。
図8は、本実施の形態におけるエピタキシャルウエハを概略的に示す断面図である。図8を参照して、本実施の形態におけるエピタキシャルウエハ20について説明する。
本発明例1では、基本的には、実施の形態2におけるSi(1-v-w-x)CwAlxNv基材10bの製造方法にしたがって、図2に示すPLD装置で、図9に示すように3層を含むSi(1-v-w-x)CwAlxNv層を備えたSi(1-v-w-x)CwAlxNv基材10aを製造した。また、製造することを目的とする組成比x+vは0.9のSi0.05C0.05Al0.45N0.45であった。なお、図9は、本発明例1におけるSi(1-v-w-x)CwAlxNv基材を概略的に示す断面図である。
本発明例2は、基本的には本発明例1と同様にSi(1-v-w-x)CwAlxNv基材を製造したが、第2の層14がSi0.45C0.45Al0.04N0.06である点において異なっていた。
本発明例3は、基本的には本発明例1と同様にSi(1-v-w-x)CwAlxNv基材を製造したが、第2の層14がSi0.45C0.45Al0.06N0.04である点において異なっていた。
本発明例4は、基本的には本発明例1と同様にSi(1-v-w-x)CwAlxNv基材を製造したが、第3の層15がSi0.05C0.05Al0.44N0.46である点において異なっていた。
本発明例5は、基本的には本発明例1と同様にSi(1-v-w-x)CwAlxNv基材を製造したが、第3の層15がSi0.05C0.05Al0.46N0.44である点において異なっていた。
本発明例6は、基本的には本発明例1と同様にSi(1-v-w-x)CwAlxNv基材を製造したが、主表面が(111)面のSi基板を用いた点において異なっていた。
本発明例7は、基本的には本発明例6と同様にSi(1-v-w-x)CwAlxNv基材を製造したが、第2の層14がSi0.45C0.45Al0.04N0.06である点において異なっていた。
本発明例8は、基本的には本発明例6と同様にSi(1-v-w-x)CwAlxNv基材を製造したが、第2の層14がSi0.45C0.45Al0.06N0.04である点において異なっていた。
本発明例9は、基本的には本発明例6と同様にSi(1-v-w-x)CwAlxNv基材を製造したが、第3の層15がSi0.05C0.05Al0.44N0.46である点において異なっていた。
本発明例10は、基本的には本発明例6と同様にSi(1-v-w-x)CwAlxNv基材を製造したが、第3の層15がSi0.05C0.05Al0.46N0.44である点において異なっていた。
比較例1は、基本的には本発明例1と同様であったが、Si基板上にAlN層を成長させた点において異なっていた。つまり、原料103は、AlNの原料とした。
比較例2は、基本的には本発明例6と同様であったが、Si基板上にAlN層を成長させた点において異なっていた。つまり、原料103は、AlNの原料とした。
本発明例1~10のSi(1-v-w-x)CwAlxNv基材および比較例1および2のAlN基材を、室温まで冷却して、PLD装置100から取り出した。その後、本発明例1~10のSi(1-v-w-x)CwAlxNv層、比較例1および比較例2のAlN層の主表面において10mm四方の領域について、クラックの数を光学顕微鏡で測定した。クラックは、長手方向の総距離が1mm以上のものを1つとし、それ未満の長さのものはカウントしなかった。その結果を下記の表1に示す。
表1に示すように、異種基板11との界面から主表面12aに向けて異種基板11の材料に近い組成から遠い組成になるように成長させた本発明例1~10のSi(1-v-w-x)CwAlxNv層のクラック数は、5個であった。一方、比較例1および2のAlN層のクラック数は10個であった。このことから、異種基板から、Si(1-v-w-x)CwAlxNv層において主表面に位置するSi0.05C0.05(AlN)0.9層まで組成比x+vを単調増加させた本発明例1~10は、異種基板との熱膨張率の差を緩和できたので、クラック数を低減することができた。
Claims (9)
- 異種基板を準備する工程と、
前記異種基板上に、主表面を有するSi(1-v-w-x)CwAlxNv層(0≦v≦1、0≦w≦1、0≦x≦1、0≦v+w+x≦1)を成長させる工程とを備え、
前記Si(1-v-w-x)CwAlxNv層における前記主表面に位置する組成比x+vは、0<x+v<1であり、
前記Si(1-v-w-x)CwAlxNv層において、前記異種基板との界面から前記主表面に向けて組成比x+vが単調増加または単調減少し、
前記Si(1-v-w-x)CwAlxNv層において、前記異種基板との界面の組成比x+vは、前記主表面の組成比x+vよりも前記異種基板の材料に近い、Si(1-v-w-x)CwAlxNv基材の製造方法。 - 前記成長させる工程後に、前記異種基板を除去する工程をさらに備えた、請求項1に記載のSi(1-v-w-x)CwAlxNv基材の製造方法。
- 前記成長させる工程では、複数の層を含む前記Si(1-v-w-x)CwAlxNv層を成長させる、請求項1または2に記載のSi(1-v-w-x)CwAlxNv基材の製造方法。
- 前記成長させる工程では、パルスレーザー堆積法により前記Si(1-v-w-x)CwAlxNv層を成長させる、請求項1~3のいずれかに記載のSi(1-v-w-x)CwAlxNv基材の製造方法。
- 請求項1~4のいずれかに記載のSi(1-v-w-x)CwAlxNv基材の製造方法によりSi(1-v-w-x)CwAlxNv基材を製造する工程と、
前記Si(1-v-w-x)CwAlxNv層上にAl(1-y-z)GayInzN層(0≦y≦1、0≦z≦1、0≦y+z≦1)を成長させる工程とを備えた、エピタキシャルウエハの製造方法。 - 主表面と、前記主表面と反対側の裏面とを有するSi(1-v-w-x)CwAlxNv層(0≦v≦1、0≦w≦1、0≦x≦1、0≦v+w+x≦1)を備えたSi(1-v-w-x)CwAlxNv基材であって、
前記Si(1-v-w-x)CwAlxNv層における前記主表面に位置する組成比x+vは、0<x+v<1であり、
前記Si(1-v-w-x)CwAlxNv層において、前記裏面から前記主表面に向けてx+vが単調増加または単調減少していることを特徴とする、Si(1-v-w-x)CwAlxNv基材。 - 主表面を有する異種基板をさらに備え、
前記Si(1-v-w-x)CwAlxNv層の前記裏面側が、前記異種基板の前記主表面に接するように形成され、
前記Si(1-v-w-x)CwAlxNv層において、前記裏面の組成比x+vは、前記主表面の組成比x+vよりも前記異種基板の材料に近いことを特徴とする、請求項6に記載のSi(1-v-w-x)CwAlxNv基材。 - 前記Si(1-v-w-x)CwAlxNv層は複数の層を含む、請求項6または7に記載のSi(1-v-w-x)CwAlxNv基材。
- 請求項6~8のいずれかに記載のSi(1-v-w-x)CwAlxNv基材と、
前記Si(1-v-w-x)CwAlxNv層の前記主表面上に形成されたAl(1-y-z)GayInzN層(0≦y≦1、0≦z≦1、0≦y+z≦1)とを備えた、エピタキシャルウエハ。
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JP2009280484A (ja) * | 2008-04-24 | 2009-12-03 | Sumitomo Electric Ind Ltd | Si(1−v−w−x)CwAlxNv基材の製造方法、エピタキシャルウエハの製造方法、Si(1−v−w−x)CwAlxNv基材およびエピタキシャルウエハ |
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Also Published As
Publication number | Publication date |
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CN102017079B (zh) | 2012-09-05 |
US20110031534A1 (en) | 2011-02-10 |
JP5621199B2 (ja) | 2014-11-05 |
JP2009280485A (ja) | 2009-12-03 |
EP2276061A4 (en) | 2013-10-16 |
US8715414B2 (en) | 2014-05-06 |
EP2276061A1 (en) | 2011-01-19 |
KR20100134039A (ko) | 2010-12-22 |
KR101516036B1 (ko) | 2015-04-29 |
CN102017079A (zh) | 2011-04-13 |
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