Classifications

• • E—FIXED CONSTRUCTIONS
  • E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
  • E06B—FIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
  • E06B3/00—Window sashes, door leaves, or like elements for closing wall or like openings; Layout of fixed or moving closures, e.g. windows in wall or like openings; Features of rigidly-mounted outer frames relating to the mounting of wing frames
  • E06B3/66—Units comprising two or more parallel glass or like panes permanently secured together
  • E06B3/663—Elements for spacing panes
  • E06B3/66309—Section members positioned at the edges of the glazing unit
  • E06B3/66342—Section members positioned at the edges of the glazing unit characterised by their sealed connection to the panes
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
  • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
  • B23K35/24—Selection of soldering or welding materials proper
  • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
  • B23K35/262—Sn as the principal constituent
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B81—MICROSTRUCTURAL TECHNOLOGY
  • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
  • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
  • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
  • B81C1/00261—Processes for packaging MEMS devices
  • B81C1/00269—Bonding of solid lids or wafers to the substrate
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
  • C03C27/06—Joining glass to glass by processes other than fusing
  • C03C27/08—Joining glass to glass by processes other than fusing with the aid of intervening metal
• • C—CHEMISTRY; METALLURGY
  • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
  • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
  • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
  • C04B37/003—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts
  • C04B37/006—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts consisting of metals or metal salts
• • E—FIXED CONSTRUCTIONS
  • E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
  • E06B—FIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
  • E06B3/00—Window sashes, door leaves, or like elements for closing wall or like openings; Layout of fixed or moving closures, e.g. windows in wall or like openings; Features of rigidly-mounted outer frames relating to the mounting of wing frames
  • E06B3/66—Units comprising two or more parallel glass or like panes permanently secured together
  • E06B3/673—Assembling the units
  • E06B3/67326—Assembling spacer elements with the panes
  • E06B3/67334—Assembling spacer elements with the panes by soldering; Preparing the panes therefor
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
  • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
  • H10F19/807—Double-glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B81—MICROSTRUCTURAL TECHNOLOGY
  • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
  • B81C2201/00—Manufacture or treatment of microstructural devices or systems
  • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
  • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
  • B81C2201/019—Bonding or gluing multiple substrate layers
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B81—MICROSTRUCTURAL TECHNOLOGY
  • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
  • B81C2203/00—Forming microstructural systems
  • B81C2203/01—Packaging MEMS
  • B81C2203/0118—Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B81—MICROSTRUCTURAL TECHNOLOGY
  • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
  • B81C2203/00—Forming microstructural systems
  • B81C2203/03—Bonding two components
  • B81C2203/033—Thermal bonding
  • B81C2203/035—Soldering
• • C—CHEMISTRY; METALLURGY
  • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
  • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
  • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
  • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
  • C04B2237/12—Metallic interlayers
• • C—CHEMISTRY; METALLURGY
  • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
  • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
  • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
  • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
  • C04B2237/12—Metallic interlayers
  • C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
• • C—CHEMISTRY; METALLURGY
  • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
  • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
  • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
  • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
  • C04B2237/12—Metallic interlayers
  • C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
  • C04B2237/128—The active component for bonding being silicon
• • C—CHEMISTRY; METALLURGY
  • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
  • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
  • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
  • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
  • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
  • C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T428/00—Stock material or miscellaneous articles
  • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
  • Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]
  • Y10T428/1317—Multilayer [continuous layer]
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T428/00—Stock material or miscellaneous articles
  • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
  • Y10T428/24744—Longitudinal or transverse tubular cavity or cell

Definitions

• the invention relates to a composite object according to the preamble of claim 1 and a method for its production.
• Composite objects of the generic type for example in the form of highly insulating composite disks or packages for microelectromechanical systems (MEMS) and in semiconductor technology, are already known in large numbers.
• MEMS microelectromechanical systems
• the components to be interconnected are hermetically joined together by a joining process, but in particular a soldering process.
• the soldering process is carried out under atmospheric pressure and then the gap formed is evacuated.
• Patent publication US 2002/0088842 describes the use of a tin-based metallic solder.
• US Pat. No. 6,444,281 describes the use of a low melting indium based wire to form a gasket.
• the addition process at relatively low temperatures can be below 200 0 C to carry out, and there is no prior metallization of the glass surface is required.
• the mechanical stability of the composite must be reinforced by additional means, in particular by an outside the seal attached epoxy bonding. The most pronounced, however, is the rare occurrence of indium against commercial application of such technology.
• Another approach is the technique of anodic bonding.
• the patent US 3,470,348 describes the formation of an anodic compound between an oxidic material which becomes ion conducting at elevated temperature with a metal in the liquid state.
• the liquid metal is placed on a positive electrical potential to the insulator.
• By heating the insulator its electrical conductivity increases considerably, whereupon an electric current begins to flow.
• an electric current density of 20 ⁇ A / mm 2 can be in about 30 s form a chemical diffusion layer and thus a connection between the metal and the insulator.
• the solder metals proposed there are either high-melting, toxic or do not form a mechanically strong compound in this form with glass.
• the object of the invention is to improve a composite object of the aforementioned type and to provide a method for its production.
• the composite object according to the invention comprises two components which are connected to one another in a medium-tight manner via a solder bridge in an intermediate connecting region.
• at least one of the components, at least on the side facing the connection region, has an outer layer formed of an oxidic, ion-conducting material at elevated temperature.
• the solder bridge is formed from a low-melting tin alloy with a weight fraction of at least 65% w tin and a melting point of at most 35O 0 C, which contains at least one activating metal as alloying ingredient.
• the symbol% w stands here and below for percentages by weight.
• the solder bridge is connected to each of the two components, whose outer layer facing the connection region is formed of an oxidic, ion-conducting material at elevated temperature, by anodic bonding (AB).
• the alloy may also contain several activating metals.
• At least one of the two components is formed entirely from an oxidic material which conducts ions at elevated temperature.
• At least one of the two components is formed from an electrically insulating core material which is surrounded by an outer layer of an oxidic, ion-conducting at elevated temperature material.
• at least one of the two components is formed from an electrically conductive core material, which is provided at least with an outer layer of an oxidic, ion-conducting at elevated temperature material.
• one of the two components is formed from a core material which is provided at least with an outer layer made of a material soldered conventionally with solder solder.
• the joining process can be performed at comparatively low temperatures. As a result, the characteristics of the components are not impaired. For example, components made of tempered glass can be used and any existing coatings such as low-emitting layers ("low E coating") remain undamaged.
• low E coating low-emitting layers
• the glass surface can be much better wet with the liquid solder material, which is essential for the formation of the medium-tight connection.
• a method for producing a composite object according to the invention comprising the steps:
• said tin alloy has a weight fraction of at least 65% w tin and a melting point of at most 35O 0 C and contains at least one activating metal as an alloying ingredient.
• a method for producing a composite object according to the invention comprises the steps:
• connection area tin alloy with a positive voltage of 300 to 2 1 000 V against each of the components (2a, 2b) is applied, whose the outer region facing the connection area of an oxidic , is formed at elevated temperature ion-conductive material; wherein said tin alloy has a weight fraction of at least 65% w tin and a melting point of at most 35O 0 C and contains at least one activating metal as an alloying ingredient.
• the two methods described above differ in particular by the method of attachment of the solder material.
• a corresponding blank of the tin alloy for example, a thin frame-shaped strip, placed on one of the components.
• the two components are brought together in such a way that the said blank is sandwiched between them.
• first of all the two components are brought together in such a way that between them a connection area to be filled with the solder material remains free.
• the tin alloy is filled in liquid form in the said connection region between the two components.
• the term "activating metal” is understood to mean in principle any metallic elements which simplify a connection with the oxidic material of the respective components, ie which are oxidized more easily than tin anodically and can form a mechanically stable, oxidic structure in the boundary region connect well with the glass.
• aluminum, beryllium, magnesium, calcium, lithium, sodium, potassium, silicon, germanium, gallium or indium are advantageously added as the activating metal, preferably a metal selected from the group consisting of aluminum, beryllium, magnesium, gallium, indium , Lithium and sodium. These are particularly preferably aluminum, lithium and beryllium. It has been found that with tin-aluminum alloys there is virtually no visible oxide formation at the tin solder-glass interface, which is essential for the formation of a uniform and medium-tight connection.
• the weight fraction of activating metal in the tin solder is preferably at least 0.005% w and at most 5% w .
• the solder bridge can have a wide variety of geometrical configurations.
• the two components can be connected to each other via patch or strip-shaped solder bridges.
• the solder bridge is advantageously configured circumferentially.
• the thickness of the solder bridge that is, the distance between the two components in the connection area, can basically be selected within a wide range. As a lower limit, a thickness of about 5 microns has been proven to ensure a continuous solder bridge everywhere.
• the maximum thickness of the solder bridge is not subject to any particular limitations and is typically about 1 mm, which has primarily manufacturing reasons, but also stability and cost reasons.
• the two components are formed as glass sheets.
• these are provided with a medium-tight closed interior, which is under high vacuum.
• the two components are formed as glass and / or ceramic platelets and provided, for example, for use as packaging for a microelectromechanical or microelectronic component.
• the components are subjected to a cleaning process before or during step a1) or b1). It is understood that the cleaning process is selected according to the material of the components and the scope of the composite object.
• carbon compounds can be eliminated by treatment with UV light and / or ozone, and water can be desorbed by heating to> 250 ° C in a high vacuum.
• sputtering e.g., with argon ions
• water and carbon compounds can also be efficiently removed.
• the process according to the invention can be carried out under ambient air or under an inert gas atmosphere.
• the desired metal oxide can be produced by oxidation of the activating component in the liquid state (eg Al 2 O 3 from Al) under well-defined conditions (oxygen concentration, temperature, reactor design and geometry, flow conditions), for example directly during the preparation of the solder or before introduction into the High vacuum environment in an oxygen-containing atmosphere.
• the oxidation medium as a liquid eg H 2 O 2
• a salt eg KCIO4
• a salt solution are added to obtain the desired amount of oxide.
• a getter material which is known per se is also designed in the area between the two glass panes enclosed by the connection area before the anodic bonding.
• FIG. 1 shows two snapshots of a first embodiment of the method for producing a composite object, in a schematic sectional illustration
• Fig. 2 shows the process of anodic bonding, in more schematic
• FIG. 3 shows three snapshots of a second embodiment of the method for producing a composite object, in a schematic side view
• FIG. 4 shows a first embodiment of the composite object, with two components made of an oxidic material which conducts ions at elevated temperature;
• FIG. 5 shows a second embodiment of the composite object, with an upper component of an oxidic, at elevated temperature ion-conducting material, and a lower component with an electrically insulating core, which is coated with an oxide, at elevated temperature ion-conducting material.
• Fig. 6 shows a third embodiment of the composite object, with an upper component of an oxidic, at elevated temperature ion-conducting material, and a lower component with an electrically insulating core, which is coated with an oxide, at elevated temperature ion-conducting material.
• Fig. 6 shows a third embodiment of the composite object, with an upper
• Fig. 7 shows a fourth embodiment of the composite object, with an upper
• FIG. 8 shows an overview of the production of a highly insulating composite pane.
• first two plate-shaped glass elements 2a and 2b are provided, which have previously been subjected to a cleaning step.
• the two glass elements are aligned substantially horizontally and initially arranged one above the other at a distance d1 as shown in FIG. 1a.
• the distance d1 is to be chosen so that then a trouble-free degassing is possible, and is therefore for example about 5 cm.
• the lower glass element 2a is covered with a layer 4 of a tin alloy. As will be explained in more detail below, this is a low-melting tin alloy having a melting point of at most 35O 0 C, which contains at least one activating metal as an alloying ingredient.
• the geometric shape of the layer 4 is cut according to the medium-tight connection region to be connected. For example, in order to form a medium-tightly sealed inner space 6, it is necessary to lie between the two glass elements 2 a and 2 b comes, a circulating near the edge of the glass elements, frame-shaped layer 4 used.
• the two glass elements 2a, 2b and the applied tin solder layer 4 are heated to a temperature above the melting temperature of the tin alloy, for example to 300 0 C.
• a temperature above the melting temperature of the tin alloy for example to 300 0 C.
• this is carried out under fine vacuum in a suitable chamber, as explained in more detail in the examples below.
• the two glass elements 2a, 2b are brought together in such a way that the connecting region 6 with tin alloy 4 located therein is formed therebetween.
• a distance d2 of approximately 200 ⁇ m is set between the two glass elements 2a, 2b.
• corresponding spacers are previously designed on the lower glass element 2b for this purpose.
• a solder bridge is formed by anodic bonding, by applying a positive voltage of about 300 to 2 1 000 V to the two glass elements in the connection area located tin alloy.
• the processes taking place are shown schematically in FIG. 2, the two glass elements 2a, 2b with the tin alloy 4 between them being clamped between two grounded electrodes E and the tin alloy 4 being connected to a positive electrode .theta.
• the activating component eg aluminum
• the activating component eg aluminum
• oxygen anions diffuse towards the liquid metal, forming an oxidic diffusion layer, which leads to a mechanical bond (the so-called” anodic bond "), which is only possible because the two oxidic components in the in
• cations such as Na + or K + migrate away from the interface to the tin solder in the oxidic component, and those cations in the immediate vicinity migrate. Near the cathode side there ensure the charge balance. For this reason, the current during the bonding process is determined by the ionic conductivity of the oxide component or the temperature.
• the tin-solder-added activating metal counteracts unwanted formation of tin oxide, since it is itself oxidized more easily than the tin, but can not completely prevent it.
• a small amount of oxide of the activating metal is in the melting of the solder in the presence of oxygen, e.g. in the air, always to be expected. Small amounts of such an oxide can even have a positive effect on the overall process. If the solder is introduced in a liquid state between two components, this ensures an initial "minimal" wetting and makes it possible to form a continuous frame of liquid solder. In the absence of any oxides, it is likely that lack of wetting tends to cause the liquid solder to drip, which in turn makes it impossible to form a coherent frame of liquid solder.
• FIGS. 3a to 3c a somewhat different sequence of steps is run through.
• the two glass elements 2a and 2b are heated and degassed. Thereafter, the two glass elements are aligned substantially horizontally and arranged at a distance d2, for example, 200 microns above the other, which is advantageously accomplished by appropriately sized support body.
• the connecting region 6 formed therebetween is initially still free.
• the tin alloy 4 in the liquid state is introduced from the side between the glass elements 2a, 2b in such a way that the connection region is filled in the desired manner, preferably in its edge region.
• the delivery system comprises a heated storage container 10 and a supply hose 12 provided with a nozzle tip.
• a fixed arrangement of the glass elements with a completely rotatable delivery system or else rotatable arrangement of the glass elements can be used with stationary feeding system.
• a solder bridge is formed by anodic bonding by applying a positive voltage of about 300 to 2O00 V to the two glass elements in the connection region of the tin alloy.
• the anodic bonding is already induced when the tin alloy is introduced.
• the supplied tin alloy is kept at a positive voltage, on the other hand runs on each of the two glass elements held at ground potential diverting element synchronously with the tip of the delivery system.
• an absolutely oxide-free solder can be used, since the wetting is brought about continuously by the bonding process.
• FIGS. 4 to 7 show various basic configurations of the composite object in each case in the arrangement which is used to form the solder bridge.
• the embodiment shown in FIG. 4 comprises two components 2 a and 2 b, both of which consist entirely of an oxidic, ion-conducting material at elevated temperature.
• the tin alloy 4 is brought to a positive potential, while the two components 2a and 2b are held by means of associated metal electrodes E at ground potential.
• anode bonding takes place at the interfaces between the tin alloy 4 and the two components 2a and 2b.
• the embodiment illustrated in FIG. 5 comprises an upper component 2b made of an oxidic material which conducts ions at elevated temperature, and a lower component 2u which has an electrically insulating core 2i, for example made of ceramic, and a coating 2a made of an oxidic, ion-conducting at elevated temperature material.
• the tin alloy 4 is brought to a positive potential, while the two components 2b and 2u are held at ground potential by means of associated metal electrodes E.
• anodic bonding (AB) takes place at the interfaces between the tin alloy 4 and the two components 2b and 2u.
• the embodiment shown in FIG. 6 comprises an upper component 2b made of an oxidic, at elevated temperature ion-conducting material, and a lower component 2v comprising an electrically conductive core 2m, for example a metal plate or a silicon wafer, the top side with a Coating 2a is provided from an oxidic, at elevated temperature ion-conducting material.
• the tin alloy 4 is brought to a positive potential, while the upper component 2b is held by means of an associated metal electrode E at ground potential.
• the electrically conductive core 2m of the lower component 2v acts here as a second counterelectrode.
• the potential applied to the second counterelectrode must be adapted, which is illustrated in FIG. 6 by a voltage divider circuit.
• anodic bonding takes place at the interfaces between the tin alloy 4 and the two components 2b and 2v (or the interface 2a).
• the embodiment shown in FIG. 7 comprises an upper component 2b made of an oxidic material which conducts ions at elevated temperature, and a lower component 2w, which comprises an arbitrary substrate layer 2s, for example a silicon wafer, which has a conventionally soft-solderable material on top 2f is coated.
• 2f can also be a multi-layer system.
• the tin alloy 4 is brought to a positive potential, while the upper component 2b is held by means of the associated metal electrode E at ground potential. It finds the interface between the tin alloy 4 and the upper component 2b anodic bonding (AB) instead, while at the same time between the tin alloy 4 and the lower component 2w a conventional solder joint is formed. In this case, no electrical potential needs to be applied to the lower component 2w.
• Table 1 shows a selection of tin base solders with alloyed activating metal component as they can be used for composite object fabrication.
• the symbol% w stands for weight percentages below.
• Optimizing these solders for a specific application sometimes requires modifying the microstructure of the metal structure and thus the mechanical properties by modifying the alloying components (eg, Cu, Ag, Zn).
• the activated activating components eg Li, Mg, Al, Ga
• FIG. 8 A method for producing a composite disk is explained in FIG. 8.
• Float glass panes with a thickness of 6 mm are first cleaned with a soap solution then with water and then rinsed with isopropanol and dried. Residual carbon contaminants on the surface are removed by means of UV / ozone cleaning.
• the glasses pass through a lock system into a pre-vacuum chamber, where they are heated to about 200 ° C. at a chamber pressure of about 0.1 mbar. From then brought to the disks via a further lock in the high-vacuum chamber (HVK) from advertising where a background pressure of 10 "6 to 10" 7 mbar prevails.
• HVK high-vacuum chamber
• the discs are further heated to a temperature between 25O 0 C and 300 0 C.
• the two glasses are directly above each other at a distance of about 20 cm.
• the lower half is fitted with the getter material and an array of spacers defining the final gap between the discs (typically 250 ⁇ m).
• the two discs are lowered until the upper disc rests on the spacers over a large area.
• the selected solder connection for example SnAI0.6% w
• MEMS microelectromechanical systems
• Such a package is often made of multiple layers by laminating a ceramic material in the green, unfaithful state.
• the designation of the packaging indicates the hermetic sealing of the electronic or MEMS component in the housing.
• a housing for semiconductors made of an oxide ceramic with at least 1% m0 ⁇ content of Na + or Li + is largely purified by UV / ozone cleaning of carbon compounds and its top O very close to a bath of liquid SnAgMgCu 4.0; 3.0; 0.5% w soldered plumb, so that only at the edge on the top of a "frame” this solder of about 150 microns thick adhere.
• a MEMS acceleration sensor is embedded in the housing and glued to its bottom by epoxy resin. Subsequently, the individual electrical connections are carried out by conventional wire bonding ("wire bonding").
• a matching cover for the housing of the same ceramic material (or an optically permeable, alkali-rich glass such as float glass, if optical electronics or MEMS to be packaged) is placed and clamped the arrangement between two electrodes to ground potential and 24O 0 C heated with the solder melts.
• the solder is contacted with an electrically conductive tip and by applying a DC voltage to an electrical potential of + 400V to earth. After 5 minutes, the voltage is switched off and the compound object produced by anodic bonding cooled down.
• a 0.6 mx 1.2 m solar cell panel consisting of 72 individual CIGS cells is produced on a 3 mm thick substrate carrier made of float glass.
• the molybdenum electrodes (approximately 9 cm ⁇ 9 cm) and their connection contacts are applied to the glass substrate by means of a sputtering process (first 50 nm Cr, followed by 500 nm Mo).
• the photoactive Cu (In, Ga) S ⁇ 2 layer is deposited in the desired stoichiometry and thickness (1 to 2 ⁇ m) by CVD coevaporation with a second mask, followed by a 50 nm thin film of cadmium sulfide CdS.
• a conductive, transparent oxide layer of doped ZnO is covered by sputtering.
• This last mask is selected such that a local shift to the protruding lower Mo conductor layer results in a series connection of all 72 individual cells.
• the electrical connection to the entire panel to the first and last cell is now carried out by means of two 2 cm wide, about 150 micron thick Al conductor strips, which are insulated with a 20 micron thick SiO 2 and a 50/200 nm Cr / Ni layer , The finished solar cell panel is then hermetically sealed by one of the anodic bonding methods described herein.
• the anodic bonding process is initiated. After 8 minutes, the power is turned off and the solar panel composite object is cooled. The finished product is thus hermetically sealed.
• other types of solar cells can be welded as well, such as polymer, Si or Grätzel cells with organic "ionic liquid” electrolyte, the latter must be added later.
• OLEDs Organic Light Emitting Devices
• OLEDs are inexpensive alternatives to conventional semiconductor light-emitting elements. Owing to the structure of organic components and the high specific surface area, OLEDs are extremely susceptible to oxidation. This application describes the hermetic packaging of an OLED display in a protective gas atmosphere, which leads to a complete exclusion of oxygen and thus to an increased service life.
• a 5 cm * 9 cm OLED display is on a 0.25 mm thick n-type semiconductor silicon wafer, on which previously by oxygen plasma treatment, a SiO 2 insulator layer was formed by applying a transparent anode assembly of ITO (indium tin oxide) by means of lithography, Rotati- onsbe harshung ( "Spincoating") of the organic layers and vapor deposition of the cathode assembly (again lithographically from ITO).
• ITO indium tin oxide
• spincoating Rotati- onsbe tilting
• a circumferential, approximately 1 cm wide strip is applied to the edge of the Si wafer by vapor deposition of 100 nm Ti followed by 10 ⁇ m Ni by means of a mask as a solderable substrate.
• a 1 mm thick float glass is now lowered to a distance of 200 microns on the finished OLED arrangement.
• a protective gas atmosphere an approximately 2 cm wide strip on The edge of the object to be connected locally heated on top and bottom by means of two heated metal frame to about 270 0 C and liquid SnAILi 0.4, 0.2% w solder entered laterally via a nozzle system, so that a circumferentially contiguous frame.
• the solder is then brought to an electrical potential of +500 V with respect to the heated metal electrode adjacent to the glass side and held for 4 minutes.
• the power source is now turned off and the heated metal frame removed and cooled the finished packaged OLED display.
• the electrochemical reaction taking place during the anodic bonding causes the formation of alkaline compounds, such as sodium hydroxide solution (NaOH), in the structure of the ion-conducting material on the cathode side.
• alkaline compounds such as sodium hydroxide solution (NaOH)
• NaOH sodium hydroxide solution
• traces of these substances can be used as evidence of an anodic reaction.
• a wet litmus paper will indicate the presence of basic components by blue-violet discoloration. This discoloration does not occur elsewhere in the glass.
• a second and by far more meaningful method of detecting anodic bonding is the analysis of specimens by electron microscopy and energy dispersive spectroscopy (EDS).
• EDS energy dispersive spectroscopy

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• Ceramic Engineering (AREA)
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• Geochemistry & Mineralogy (AREA)
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• 2009
  • 2009-03-30 EP EP09727813A patent/EP2260168A1/de not_active Withdrawn
  • 2009-03-30 CN CN2009801205504A patent/CN102046909B/zh not_active Expired - Fee Related
  • 2009-03-30 JP JP2011502205A patent/JP5518833B2/ja not_active Expired - Fee Related
  • 2009-03-30 WO PCT/CH2009/000107 patent/WO2009121196A1/de not_active Ceased
  • 2009-03-30 US US12/935,732 patent/US20110151157A1/en not_active Abandoned

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