WO2009115005A1 - Anneau de protection pour dispositif de traitement au plasma et dispositif de traitement au plasma - Google Patents

Anneau de protection pour dispositif de traitement au plasma et dispositif de traitement au plasma Download PDF

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Publication number
WO2009115005A1
WO2009115005A1 PCT/CN2009/070549 CN2009070549W WO2009115005A1 WO 2009115005 A1 WO2009115005 A1 WO 2009115005A1 CN 2009070549 W CN2009070549 W CN 2009070549W WO 2009115005 A1 WO2009115005 A1 WO 2009115005A1
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WO
WIPO (PCT)
Prior art keywords
ring
plasma processing
processing apparatus
cross
insulating
Prior art date
Application number
PCT/CN2009/070549
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English (en)
Chinese (zh)
Inventor
南建辉
Original Assignee
北京北方微电子基地设备工艺研究中心有限责任公司
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Application filed by 北京北方微电子基地设备工艺研究中心有限责任公司 filed Critical 北京北方微电子基地设备工艺研究中心有限责任公司
Publication of WO2009115005A1 publication Critical patent/WO2009115005A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

Definitions

  • the present invention relates to the field of microelectronics, and more particularly to a shield ring for confining a plasma and a plasma processing apparatus including the shield ring.
  • a conventional plasma processing apparatus processes a semiconductor substrate or a wafer, for example, in a dry etching process, plasma is used to etch a desired pattern on a semiconductor substrate or a wafer;
  • a plasma-assisted deposition is used to form a desired film layer; after an etching or ion implantation process, a photoresist layer or the like is stripped with an oxygen plasma.
  • Plasma processing apparatuses have a wide range of applications in the manufacturing process of semiconductor integrated circuits.
  • the plasma processing apparatus 200 includes a sidewall 202, an upper electrode 204, and a lower electrode 210, wherein the sidewall 202 is annular; the upper electrode 204 and the lower electrode 210 are respectively located on the sidewall 202. Top and bottom; the area between the side wall 202, the upper electrode 204 and the lower electrode 210 is a reaction chamber.
  • a processing member 214 for example, a semiconductor wafer
  • an electrostatic chuck not shown
  • the vacuum device is used to The reaction chamber is evacuated; then, a reaction gas is injected into the reaction chamber, and a first RF source is coupled to the upper electrode 204, and a second RF source is coupled to the lower electrode 210, wherein the second RF source is RF
  • the power is less than the first RF source RF power; under the action of the first RF source and the second RF source, the gas in the reaction chamber is ionized to form a plasma; the electric field in the plasma is between the upper and lower electrodes Under the action, the movement of the lower electrode 210 is accelerated, and acts on the workpiece 214 to physically and/or chemically react with the material of the workpiece 214, and the workpiece 214 is processed (eg, etched, deposited, etc.).
  • the plasma in the reaction chamber while processing the workpiece 214, also diffuses in other directions, such as toward the sidewalls 202 of the reaction chamber and the peripheral regions of the lower electrode 210.
  • a liner 220 having an insulating layer is further disposed on the inner wall of the sidewall 202; and a shield ring 222 is provided on the periphery of the lower electrode 210.
  • the shield ring 222 has a through hole 224.
  • the shielding ring 222 is a conductive metal material and is connected to the ground.
  • the charged ions diffused toward the reaction chamber side wall 202 are blocked by the inner liner 220 having the insulating layer, thereby avoiding corrosion or contamination of the side wall 202; the charged ions diffused toward the shield ring 222 are It is coupled into the shield ring 222 so as to be unable to pass through the shield ring 222, so that diffusion to other regions can be avoided, and at the same time, the reacted gas can be extracted by the vacuum device through the through hole 224.
  • the shield ring 222 is made of a metal material, the plasma in the plasma processing apparatus inevitably corrodes the shield ring 222 to generate metal particles which diffuse in the reaction chamber. Metal particles are contaminated by other components of the reaction chamber or workpiece 214.
  • the shielding ring of a plasma processing apparatus is applied to the periphery of the lower electrode of the plasma processing apparatus, includes a conductive ring of an annular structure, and has a first through the thickness direction of the conductive ring. Through hole.
  • the shielding ring further includes a first insulating ring covering the upper surface of the conductive ring, and has a thickness along a position corresponding to the first through hole on the first insulating ring To the through second through hole, the first through hole and the second through hole at a corresponding position thereof form a channel.
  • the shielding ring further includes a second insulating ring covering a lower surface of the conductive ring, and a portion extending in a thickness direction at a position corresponding to the first through hole on the second insulating ring a three-way hole; the first through hole and the third through hole at a corresponding position thereof form a channel.
  • the channel cross section is circular or elliptical or polygonal; the channel axis is a straight line or a curved line or a broken line.
  • the channel axis is a straight line that is perpendicular or oblique to the upper/lower surface of the shield ring.
  • the length of the channel is greater than a mean free path of charged ions in the plasma in the plasma processing apparatus.
  • the passage has a circular cross section and a diameter of 0.5 mm to 10 mm. Further, the diameter of the cross section of the passage is 2 mm to 6 mm.
  • the channel is multiple, and the duty ratio of the shielding ring is greater than 20%.
  • the cross section of the channel is distributed on the cross section of the shielding ring corresponding thereto as follows:
  • the passage has a circular cross-sectional shape, a plurality of circular cross-sections having the same diameter, and a plurality of circular cross-sections are arranged around the axis of the shield ring in a corresponding cross-section of the shield ring, and the passage is transverse a line connecting the centers of the cross-sections in the circumferential direction to form concentric circles having different radii and surrounding the axis of the shield ring;
  • the cross-sectional shape of the channel is elliptical, the respective major and minor axes of the plurality of ellipses are respectively equal, and the plurality of elliptical cross-sections surround the shielding ring on respective cross-sections of the shielding ring An axis is arranged, and a line connecting the centers of the channel cross-sections in the circumferential direction forms concentric circles having different radii and surrounding the shield ring axis; or
  • the cross-sectional shape of the channel is elliptical, the plurality of elliptical cross-sections are arranged around the axis of the shielding ring on respective cross-sections of the shielding ring, and the long axis of the ellipse is along the circumference Square
  • the extension or the long axis of the ellipse is perpendicular to the radial direction of the shield ring, and the long axes of the ellipses gradually increase radially outward from the center of the shield ring along the shield ring.
  • the first insulating ring is an insulating material or a semiconductor material
  • the second insulating ring is an insulating material or a semiconductor material.
  • the material of the first insulating ring is selected from one or more of quartz, ceramic, yttria, silicon carbide, silicon or silicon nitride; the material of the second insulating ring is selected from the group consisting of quartz and ceramic.
  • the inner ring sidewall of the conductive ring further has a connecting portion connecting the first insulating ring and the second insulating ring, and the first insulating ring, the second insulating ring and the connecting portion One piece.
  • the plasma processing apparatus has an inner liner, the inner liner is integrally formed with the first insulating ring, or the inner liner is integrally formed with the conductive ring.
  • the present invention also provides a plasma processing apparatus comprising the shield ring of any of the above aspects.
  • the present invention has the following advantages:
  • the shield ring of the plasma processing apparatus covers the upper surface of the conductive ring with a first insulating ring having a second through hole, so that the conductive ring can be protected from plasma corrosion and no plasma processing device is generated.
  • the metal particles in the reaction chamber are contaminated; it is also ensured that the charged ions in the plasma in the plasma processing apparatus can be shielded, and the reacted gas can be extracted; moreover, the shielding ring provided by the invention also makes the conductive ring have a longer length. The service life.
  • the length of the passage through the shield ring can be extended, and the charged ions and channels in the plasma in the plasma processing apparatus can be increased.
  • the probability of sidewall collision is more conducive to shielding and limiting the charged ions in the plasma so that it is not discharged outside the chamber of the plasma processing apparatus, thereby reducing the chance of contamination of other areas of the plasma processing apparatus.
  • the shielding ring provided by the present invention since the above-mentioned shielding ring provided by the present invention is used, the use cost of the plasma processing apparatus can be reduced, and frequent replacement of the conductive can be avoided.
  • the ring can also extend the use time of the plasma processing apparatus and increase its utilization.
  • FIG. 1 is a schematic cross-sectional view of a conventional plasma processing apparatus
  • FIG. 2 is a perspective view of the shield ring of the plasma processing apparatus according to the first embodiment of the present invention taken along an axis;
  • 3a to 3d are bottom views of the conductive ring in the shield ring shown in Fig. 2 having different through hole shapes and distributions;
  • FIGS. 4a to 4e are schematic cross-sectional views of a passage of a portion of a shield ring portion according to the first embodiment, wherein longitudinal sections of different shapes of the passages are respectively shown;
  • Figure 5 is an isometric view of the shield ring according to the second embodiment of the present invention, taken along the axis;
  • Figure 6 is a perspective view of the shield ring according to the third embodiment of the present invention, taken along the axis;
  • Figure 7a to Figure 7d is a schematic cross-sectional view of a passage of a portion of the shield ring portion described in the second or third embodiment, wherein longitudinal sections of different shapes of the passages are respectively shown;
  • FIGS. 8 through 11 are isometric views of a shield ring provided by several other different embodiments of the present invention, wherein the shield ring is integrally formed with the inner liner of the plasma processing chamber. detailed description
  • a shield ring of a plasma processing apparatus comprising a conductive ring having an annular structure, the conductive ring having a first through hole penetrating in a thickness direction thereof; the shield ring further comprising a cover a first insulating ring on the upper surface of the conductive ring, and a second through hole penetrating in a thickness direction at a position corresponding to the first through hole on the first insulating ring, the first through hole and the same
  • the second through holes at the corresponding positions communicate to form a channel.
  • the shielding ring can be applied to the periphery of the lower electrode in the plasma processing apparatus, the first insulating ring can protect the conductive ring from plasma corrosion during operation of the plasma processing apparatus, and the first insulating ring
  • the second through hole may, on the one hand, enable charged ions in the plasma to be coupled to the conductive ring, and on the other hand form a gas passage with the first through hole to ensure that the reaction gas in the plasma processing apparatus can be Withdrawn or discharged outside the chamber.
  • FIG. 2 is an isometric view of the shield ring of the plasma processing apparatus according to the first embodiment of the present invention taken along an axis;
  • FIG. 3a to FIG. 3d are bottom views of the shield ring of FIG. 2 having different channel shapes and distributions. Figure.
  • the shield ring 1 provided by the first embodiment of the present invention includes a conductive ring 10 of an annular structure, and the inner diameter of the conductive ring 10 is matched with the lower electrode of the plasma processing apparatus;
  • the periphery of the electrode is further provided with a focus ring, wherein the inner diameter of the conductive ring 10 is matched with the outer diameter of the focus ring; if the outer periphery of the lower electrode is further provided with other components, the inner diameter of the conductive ring 10 can be The other components are matched; the fit is a clearance fit or a transition fit.
  • the outer diameter of the conductive ring 10 is matched with the sidewall of the plasma processing apparatus; if the inner wall of the side wall of the plasma processing apparatus is further provided with a liner, the outer diameter of the conductive ring 10 and the inner Lining cooperation; if other components are disposed on the inner wall of the side wall of the plasma processing apparatus, the outer diameter of the conductive ring 10 may be matched with the other components; the cooperation is a clearance fit or a transition fit .
  • the conductive ring 10 has a first through hole 12 penetrating in a thickness direction thereof, and a cross section of the first through hole 12 (a cross section perpendicular to a thickness direction of the conductive ring 10) is circular or elliptical Shape or polygon; Of course, other shapes are also possible as needed.
  • the central axis of the first through hole 12 may be perpendicular to the cross section or may be oblique.
  • the first through holes 12 are plural, and may be uniformly or unevenly distributed in the conductive ring 10, and FIGS. 3a to 3d are bottom views of the shielding ring shown in FIG.
  • the shape and four distribution patterns of the first through holes 12 on the conductive ring 10 are described.
  • the first through hole 12 is described below with reference to FIGS. 3a to 3d. The shape and distribution of the details are described in detail.
  • the cross-sectional shape of the first through hole 12 may be elliptical, and the corresponding major and minor axes of the ellipse are respectively equal, and the elliptical through holes 12 are in the same
  • the respective cross-sections of the shielding rings are arranged around the axis of the shielding ring, and the lines of the center of the cross-section of the channels in the circumferential direction form concentric circles having different radii and surrounding the axis of the shielding ring.
  • elliptical through holes 12 located on concentric circles of different radii may be radially aligned and extended along the shielding ring, as shown in Figure 3a; of course, elliptical through holes 12 located on concentric circles of different radii are also It can be arranged radially offset along the shield ring, as shown in Figure 3b.
  • the first through holes 12 have an elliptical cross-sectional shape, and the elliptical through holes 12 are arranged around the axis of the shielding ring on respective cross-sections of the shielding ring, and the ellipse a long axis extending in the circumferential direction or a long axis of the ellipse being perpendicular to a radial direction of the shielding ring, and the long axis of the ellipse gradually increasing from the center of the shielding ring radially outward of the shielding ring .
  • the first through holes 12 may have a circular cross-sectional shape and may have the same diameter, and the circular through holes 12 are arranged around the axis of the shielding ring on the corresponding cross-section of the shielding ring. And the lines of the center of the cross-section of the through-holes in the circumferential direction form concentric circles having different radii and surrounding the axis of the shield ring.
  • the first through holes 12 may have other distributions as needed, or may have any distribution.
  • the material of the conductive ring 10 may be a conductive metal material, such as aluminum, copper or an alloy thereof or other metal materials.
  • the upper surface of the conductive ring 10 is covered with a first insulating ring 20 , and the first insulating ring 20 is adapted to the shape and size of the conductive ring 10 to cover the conductive ring 10 .
  • the first insulating ring 20 is made of an insulating material or a semiconductor material. Specifically, it may be an insulating material or a semiconductor material resistant to plasma corrosion. For example, it may be selected from quartz, ceramic, yttria, silicon carbide, silicon or nitride. One or more of silicon, of course, the first insulating ring 20 is not limited to The materials listed may be any insulating material or semiconductor material.
  • the first insulating ring 20 is used to protect the conductive ring 10 from being subjected to plasma corrosion during operation of the plasma processing apparatus, thereby avoiding metal particle contamination.
  • the first insulating ring 20 has a second through hole 22 penetrating in the thickness direction of the first insulating ring 20 at a position corresponding to the first through hole 12, wherein the cross section of the second through hole 22
  • the shape may be circular or elliptical or polygonal; of course, other shapes may be used as needed.
  • the central axis of the second through hole 22 may be perpendicular to the cross section or may be oblique.
  • the distribution and cross-sectional shape of the second through holes 22 can be similar to that of the first through holes 12, that is, the second through holes 22 can be shaped and distributed as shown in Figs. 3a to 3d.
  • the first through hole 12 communicates with the second through hole 22 corresponding to the position thereof to form a passage.
  • the conductive ring 10 is grounded, and the plasma diffused to the shield ring 1 in the plasma processing apparatus can be coupled to the conductive ring 10 through the second through hole 22, Preventing charged ions in the plasma from passing through the shielding ring 1 to thereby shield the secondary ions from being caused to diffuse the charged ions to other regions of the plasma processing apparatus; further, the first through holes 12 and the second The through holes 22 form a passage through which the reacted gas in the plasma processing apparatus can be withdrawn.
  • the cross-sectional shape size of the passage is determined by the first through hole 12 and the second through hole 22, and may be, for example, the aforementioned circular or elliptical shape or polygonal shape or the like.
  • the distribution and cross-sectional shape of the first through hole 12 and the second through hole 22 may also be referred to as the cross-sectional shape and distribution of the channels formed by the two, that is, the first through hole 12 and the second through hole.
  • the cross-sectional shape and distribution of the 22 formed channels can also be shaped and distributed as shown in Figures 3a to 3d.
  • the diameter may range from 0.5 mm to 10 mm, preferably from 2 mm to 6 mm; when it is other shapes, the opening size may refer to the circle.
  • the passage may be of other sizes as desired, but in any case, the opening size of the passage should be such that the reactive gas during operation of the plasma processing apparatus can be withdrawn, while the charged ions in the plasma can be shielded.
  • 4a to 4e are schematic cross-sectional views of a passage of a portion of the shield ring portion, in which longitudinal sections of different shapes of the passages are respectively shown. Referring to Figures 4a to 4e, the channel axis may be a straight line or a curved line or a broken line or a combination thereof. It should be noted that the longitudinal section of the channel can also be designed into other different shapes as needed.
  • the length of the channel is greater than the mean free path of the charged ions in the plasma in the plasma processing apparatus.
  • the minimum length of the channel is the thickness of the shielding ring, and by designing the channel to be inclined or curved, the channel length can be increased without increasing the thickness of the conductive ring 10 and the first insulating ring 20. In order to better ensure that the charged ions can be shielded, and to save the material for manufacturing the shield ring.
  • the size of the bottom of the second through hole 22 is smaller than or equal to the size of the top of the first through hole 12 to ensure that the first insulating ring 20 can cover the upper surface of the conductive ring 10 except the first through hole 12 .
  • the area protects the insulating ring 10 from plasma corrosion.
  • the second through hole 22 is plural; since the second through hole 22 is located at a position corresponding to the first through hole 12, the second through hole 22 has the same shape as the first through hole 12 distributed.
  • the second through hole 22 may also have a different distribution from the first through hole 12, and other variations or improvements may be obtained by those skilled in the art according to the teachings of the embodiments of the present invention.
  • the position of the first insulating ring 20 corresponding to the individual first through holes 12 may be absent.
  • the number of the second through holes 22, that is, the second through holes 22 is smaller than the number of the first through holes 12.
  • first through hole 12 and the second through hole 22 may be through holes having different cross-sectional shapes or sizes, but the first through hole 12 and the second through hole 22 at corresponding positions can form a passage.
  • the circumstances should be included in the scope of protection of the present invention.
  • the first insulating ring 20 may be bonded to the upper surface of the conductive ring 10 by an adhesive, and the second through hole 22 and the first through hole 12 at the corresponding position are aligned, in processing or assembly.
  • the second through hole 22 and the first through hole 12 at the corresponding position may also have a certain misalignment; However, the second through hole 22 and the first through hole 12 at the corresponding position may be intentionally misaligned as needed, but in any case, a channel should be formed between the second through hole 22 and the first through hole 12 at the corresponding position.
  • the first insulating ring 20 may be fixed to the upper surface of the conductive ring 10 by other means or means, or may be placed on the surface of the conductive ring 10 without any fixing manner. Regardless of whether it is fixed or not, the convenience of the first insulating ring 20 as a consumable at the time of replacement should be considered.
  • the channel formed by the first through hole 12 and the second through hole 22 and the shielding ring have a duty ratio greater than 20%, that is, the opening area formed by the channel accounts for 20% of the entire shielding ring area. The above is to ensure that the gas after the reaction in the plasma processing apparatus can be extracted in time.
  • the conductive ring 10 can be protected from plasma corrosion, and the plasma in the plasma processing apparatus can be ensured.
  • the charged ions in the body can be shielded, and the reacted gas can be extracted.
  • the design of the above embodiment can also extend the service life of the conductive ring 10.
  • the shielding ring 1 When the shielding ring 1 is applied to the plasma processing apparatus, the use cost of the plasma processing apparatus can be reduced; and the conductive ring 10 can be frequently replaced, thereby prolonging the use time of the plasma processing apparatus and improving the utilization rate thereof; It is also possible to avoid frequent opening of the reaction chamber of the plasma processing apparatus, thereby reducing the contamination of the reaction chamber by the external environment, and improving the yield and stability of the product on the production line.
  • a second embodiment of the shield ring of the plasma processing apparatus provided by the present invention, the lower surface of the conductive ring is further covered with a second insulating ring.
  • Fig. 5 is a perspective view showing the shield ring of the second embodiment of the present invention taken along an axis line.
  • the lower surface of the conductive ring 10 is covered with a second insulating ring 30.
  • the shape and size of the second insulating ring 30 are adapted to the conductive ring 10 to cover other regions of the lower surface of the conductive ring 10 other than the first through hole 12.
  • the second insulating ring 30 is made of an insulating material or a semiconductor material, and specifically, may be resistant to isolation.
  • the insulating material or semiconductor material corroded by the daughter body may be, for example, one or more selected from the group consisting of quartz, ceramic, yttria, silicon carbide, silicon or silicon nitride.
  • the second insulating ring 30 is not Limited to the materials listed, it can be any insulating material or semiconductor material.
  • the material of the second insulating ring 30 may be the same as that of the first insulating ring 20 or may be different from the material of the first insulating ring 20.
  • the second insulating ring 30 protects the lower surface of the conductive ring 10 from contamination or corrosion from other substances.
  • a third through hole 32 penetrating in a thickness direction of the second insulating ring 30 at a position corresponding to the first through hole 12 on the second insulating ring 30, wherein a cross section of the third through hole 32
  • the shape may be circular or elliptical or polygonal; the cross section may also be other shapes as desired.
  • the third through hole 32 communicates with the first through hole 12 at a corresponding position thereof to form a passage, and communicates with the passage formed by the first through hole 12 and the second through hole 22, thereby forming a passage through the shield ring 2.
  • This channel is the exhaust passage of the reacted gas of the plasma processing apparatus.
  • Fig. 7a to Fig. 7d are schematic cross-sectional views showing the passage of the portion of the shield ring, in which the longitudinal sections of the different shapes of the passages are respectively shown.
  • the channel axis may be a straight line or a curved line or a broken line or a combination thereof. It should be noted that the longitudinal section of the passage can also be designed into other different shapes as needed.
  • the second insulating ring 30 in this embodiment may be the same as the first insulating ring 20, and details are not described herein again.
  • shield ring 2 may be the same as the shield ring of the first embodiment, and details are not described herein again.
  • the second insulating ring 30 and the first insulating ring 20 may be integrally formed.
  • a connecting portion 31 is integrally connected to the inner ring side wall of the conductive ring 10, and the second insulating ring 30 and the first insulating ring 20 are integrally connected.
  • the plasma processing apparatus has a liner 40 that protects the inner surface of the sidewall, and the conductive ring 10 in the shield ring provided by the present invention can be integrally formed with the liner 40, in which case
  • the material of the inner liner 40 may be the same as that of the conductive ring 10, and the inner surface of the inner liner 40 (the surface facing the reaction chamber) may be coated with an insulating layer such as silicon carbide or ruthenium oxide or the like.
  • FIG. 11 there is shown an isometric view of the shield ring of the present invention, taken along the axis, in accordance with another embodiment of the present invention.
  • the first insulating ring 20 may also be integrally formed with the inner liner 40.
  • the inner liner 40 of FIGS. 8 to 11 may further have an upper side cover 50 for protecting components at the peripheral portion of the electrode on the reaction chamber of the plasma processing apparatus; as for other aspects of the shielding ring, It may be the same as the shielding ring in the foregoing embodiment, and details are not described herein again.
  • the shield ring described in any of the above embodiments can be applied to a plasma processing apparatus and disposed at a periphery of a lower electrode of the plasma processing apparatus for restraining plasma in a reaction chamber of the plasma processing apparatus, and The reacted gas can be withdrawn through the shield ring out of the reaction chamber.
  • any structure known to those skilled in the art can be used, and details are not described herein.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

L'invention concerne un anneau de protection (1) pour un dispositif de traitement au plasma qui comporte un anneau conducteur (10) à structure annulaire disposé autour de la périphérie d'une électrode inférieure. Le premier trou (12) pénètre à travers l'anneau conducteur (10), le long de sa direction d'épaisseur. Le premier anneau d'isolation (20), avec le second trou (22) pénétrant dans celui-ci le long de sa direction d'épaisseur à la position correspondant au premier trou (12), couvre la surface supérieure de l'anneau conducteur (10). Le premier trou (12) et le second trou (22) correspondant au premier trou sont alignés de façon à former un passage.
PCT/CN2009/070549 2008-03-17 2009-02-26 Anneau de protection pour dispositif de traitement au plasma et dispositif de traitement au plasma WO2009115005A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200810102094.8 2008-03-17
CN2008101020948A CN101541140B (zh) 2008-03-17 2008-03-17 等离子体处理装置及其屏蔽环

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WO2009115005A1 true WO2009115005A1 (fr) 2009-09-24

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US20210398781A1 (en) * 2018-11-12 2021-12-23 Jiangsu Leuven Instruments Co. Ltd Reaction chamber lining

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CN102237246B (zh) * 2010-04-26 2013-06-05 北京北方微电子基地设备工艺研究中心有限责任公司 一种排气板及等离子体处理设备
CN103167716A (zh) * 2011-12-19 2013-06-19 亚树科技股份有限公司 直立式电浆产生装置
CN108538745B (zh) * 2017-03-01 2022-01-07 北京北方华创微电子装备有限公司 反应腔室
CN109037020A (zh) * 2018-07-26 2018-12-18 德淮半导体有限公司 等离子体装置及其工作方法

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WO2000039837A1 (fr) * 1998-12-28 2000-07-06 Lam Research Corporation Anneau de confinement du plasma perfore, dans des reacteurs a plasma
CN1461494A (zh) * 2000-11-10 2003-12-10 东京毅力科创株式会社 等离子体处理装置及排气环
CN1647256A (zh) * 2002-03-29 2005-07-27 东京毅力科创株式会社 等离子体处理装置及其隔板
CN1948550A (zh) * 2005-10-14 2007-04-18 中微半导体设备(上海)有限公司 等离子体处理装置

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Publication number Priority date Publication date Assignee Title
WO2000039837A1 (fr) * 1998-12-28 2000-07-06 Lam Research Corporation Anneau de confinement du plasma perfore, dans des reacteurs a plasma
CN1461494A (zh) * 2000-11-10 2003-12-10 东京毅力科创株式会社 等离子体处理装置及排气环
CN1647256A (zh) * 2002-03-29 2005-07-27 东京毅力科创株式会社 等离子体处理装置及其隔板
CN1948550A (zh) * 2005-10-14 2007-04-18 中微半导体设备(上海)有限公司 等离子体处理装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210398781A1 (en) * 2018-11-12 2021-12-23 Jiangsu Leuven Instruments Co. Ltd Reaction chamber lining
US12112923B2 (en) * 2018-11-12 2024-10-08 Jiangsu Leuven Instruments Co. Ltd Reaction chamber lining

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CN101541140B (zh) 2012-08-22

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