WO2009110442A1 - Résonateur et réseau de résonateur - Google Patents

Résonateur et réseau de résonateur Download PDF

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Publication number
WO2009110442A1
WO2009110442A1 PCT/JP2009/053916 JP2009053916W WO2009110442A1 WO 2009110442 A1 WO2009110442 A1 WO 2009110442A1 JP 2009053916 W JP2009053916 W JP 2009053916W WO 2009110442 A1 WO2009110442 A1 WO 2009110442A1
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Prior art keywords
resonator
beams
substrate
vibration
resonator according
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PCT/JP2009/053916
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English (en)
Japanese (ja)
Inventor
晃正 玉野
岡田　光広
鈴木　健一郎
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三洋電機株式会社
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Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Priority to CN2009801037797A priority Critical patent/CN101971494A/zh
Priority to JP2010501902A priority patent/JP5333950B2/ja
Priority to US12/921,008 priority patent/US8872603B2/en
Publication of WO2009110442A1 publication Critical patent/WO2009110442A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H03H9/2447—Beam resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H2009/02488—Vibration modes
    • H03H2009/02519—Torsional

Definitions

  • the present invention relates to a resonator and a resonator array.
  • MEMS Micro Electro Mechanical Systems
  • the micromechanical resonator created by such MEMS technology is suitably used for RF radio such as a remote keyless entry system and spread spectrum communication.
  • An example of a MEMS filter using a micromechanical resonator created by such a MEMS technology is disclosed in Japanese Patent Application Laid-Open No. 2006-41911 (Patent Document 1).
  • the MEMS filter device described in this document includes a resonator.
  • the resonator included in this resonator has a square plate shape, is arranged parallel to the substrate surface and spaced from the substrate, and is supported by a cylinder connected to the substrate surface.
  • RF-MEMS filters using a silicon process with high affinity to semiconductor processes are published by Akinori Hashimura et al., “Development of RF-MEMS Filters Using Torsional Vibration”, IEICE Technical Report, The Institute of Electronics, Information and Communication Engineers. , IEICE Technical Report NW2005-185 (2006-3) (Non-Patent Document 1).
  • a resonator using a torsional vibration mode is effective in achieving both miniaturization and high Q factor.
  • JP 2006-41911 A Akinori Hashimura et al., "Development of RF-MEMS filter using torsional vibration", IEICE Technical Report, IEICE, IEICE Technical Report NW2005-185 (2006-3)
  • Non-Patent Document 1 torsional vibration is generated by expansion caused by heating with a laser.
  • a laser element since a laser element is required, the apparatus becomes large. Further, since the vibration is generated through the expansion due to the heating, the operation is unstable.
  • an object of the present invention is to provide a resonator that can easily increase the resonance frequency and can increase the Q value without extremely reducing the size.
  • a resonator in order to achieve the above-described object, includes a base material and a vibration input point for providing linear reciprocating motion in a direction perpendicular to the longitudinal direction, with one end fixed to the base material. And the first beam having a first branch point that is different from the vibration input point in the first beam, or a plurality of branch points that are different from the vibration input point in the first beam. And a second beam for generating torsional vibration based on the linear reciprocating motion.
  • torsional vibration is generated in the second beam by applying a linear reciprocating motion in a direction perpendicular to the longitudinal direction of the first beam to the first beam at one or a plurality of vibration input locations.
  • the resonance frequency can be easily increased without extremely reducing the size of the resonator.
  • a resonator using such a torsional vibration can be a resonator having a high Q value.
  • a resonator 101 as a first example of the resonator according to the present embodiment includes a base material 1, one end fixed to the base material 1, and a straight line in a direction perpendicular to the longitudinal direction.
  • the linear reciprocation branching from a first beam 2 having a vibration input point 3 for giving a reciprocating motion in the middle, and a first branch point 4 different from the vibration input point 3 of the first beam 2 to one side.
  • a second beam 5 for generating torsional vibration based on the movement.
  • one end of the first beam 2 is fixed to the base material 1a, and the other end is fixed to the base material 1b.
  • the configuration of the other parts is the same as that of the resonator 101 as the first example.
  • FIG. 1 and FIG. 2 a simplified model is displayed, and the base materials 1, 1a, 1b are simplified and displayed like walls. It is not limited to things.
  • the base materials 1a and 1b may be any shape as long as they function as fixed ends with respect to vibration of a beam as a resonator.
  • the substrate 1a and the substrate 1b may be a continuation of the same member or different members.
  • FIGS. 1 and 2 it appears that the first branch point 4 and the vibration input point 3 are arranged at equal intervals so as to divide the length of the first beam 2 into three equal parts. Not limited to this.
  • the position of the 1st branch location 4 and the vibration input location 3 can be set suitably. The same applies to each figure displayed in the same manner below.
  • lateral vibration means that the beam vibrates with repeated displacement in a direction perpendicular to the longitudinal direction of the beam. That is, the beam vibrates by repeating bending deformation.
  • lateral vibration has the same meaning.
  • a resonator using such a torsional vibration can be a resonator having a high Q value.
  • the resonator 104 as the second example of the resonator according to the present embodiment includes the second beam 7 that is different from the vibration input point 3 and the first branch point 4 in the first beam 2.
  • a third beam 6 for generating a torsional vibration extending on the side opposite to the second beam 5 is provided.
  • the second beam 5 and the third beam 6 appear to have the same length, but are not limited to the same length.
  • a linear reciprocating motion in a direction perpendicular to the longitudinal direction of the first beam 2 is applied to the first beam 2 at the vibration input location 3 as indicated by an arrow 81.
  • the first beam 2 vibrates laterally.
  • the second beam 5 and the third beam 6 are both restrained at the first beam 2 by the first branch point 4 or the second branch point 7, respectively.
  • the beam 6 is also displaced by the lateral vibration of the first beam 2, and as a result, torsional vibrations as indicated by arrows 82 and 83 are generated in the second beam 5 and the third beam 6, respectively.
  • a resonator 105 as a first example of the resonator in the present embodiment includes a base material 1 and one end fixed to the base material 1, and a straight line in a direction perpendicular to the longitudinal direction.
  • a first beam 2 having a vibration input location 3 for imparting reciprocating motion, and a plurality of branch locations 4a and 4b different from the vibration input location 3 of the first beam 2 to one side;
  • a plurality of second beams 5a and 5b for generating torsional vibration based on the linear reciprocating motion are provided.
  • one end of the first beam 2 is fixed to the base material 1a and the other end is fixed to the base material 1b.
  • the configuration of the other parts is the same as that of the resonator 105 given as the first example in the present embodiment.
  • a linear reciprocating motion in a direction perpendicular to the longitudinal direction of the first beam 2 is applied to the first beam 2 at the vibration input location 3 as indicated by an arrow 81.
  • the first beam 2 vibrates laterally.
  • the plurality of second beams 5a and 5b are all restricted at the first beam 2 by the plurality of branch points 4a and 4b, respectively, the plurality of second beams 5a and 5b are also the first beam.
  • torsional vibrations as indicated by arrows 82a and 82b are generated in the plurality of second beams 5a and 5b, respectively.
  • FIG. 7 a resonator according to the fourth embodiment of the present invention will be described.
  • the resonator 107 in the present embodiment generates torsional vibration that extends from the plurality of branch points 4a and 4b to the side opposite to the plurality of second beams 5a and 5b.
  • a plurality of third beams 6a and 6b are provided.
  • the structure of other parts is the same as that of the resonator 106 shown in the third embodiment.
  • the first reciprocating motion in the direction perpendicular to the longitudinal direction of the first beam 2 is applied to the first beam 2 at the vibration input location 3 as indicated by an arrow 81.
  • One beam 2 vibrates laterally.
  • the plurality of second beams 5a and 5b are all restricted at the first beam 2 by the plurality of branch points 4a and 4b, respectively, the plurality of second beams 5a and 5b are also the first beam.
  • torsional vibrations as indicated by arrows 82a and 82b are generated in the plurality of second beams 5a and 5b, respectively.
  • the plurality of third beams 6a and 6b are also restrained by the first beam 2 by the plurality of branch points 4a and 4b, the plurality of third beams 6a and 6b are also subjected to the lateral vibration of the first beam 2. As a result, torsional vibrations as indicated by arrows 83a and 83b are also generated in the plurality of third beams 6a and 6b.
  • FIG. 8 A resonator according to a fifth embodiment of the present invention will be described with reference to FIGS.
  • the ends of the plurality of second beams 5 a and 5 b are coupled to each other by the fourth beam 8.
  • the tips of the three beams 6a and 6b are connected by the fifth beam 9.
  • the structure of other parts is the same as that of the resonator 107 shown in the fourth embodiment.
  • both ends of the fourth beam 8 and the fifth beam 9 protrude as free ends.
  • Both ends of the fourth beam 8 are protrusions 10a and 10b, respectively.
  • the ends of the protrusions 10a and 10b are free ends. That is, the protrusions 10a and 10b are in a cantilever state.
  • Both ends of the fifth beam 9 are protrusions 11a and 11b, respectively.
  • the ends of the protrusions 11a and 11b are free ends. That is, the protruding portions 11a and 11b are in a cantilever state.
  • the structure of other parts is the same as that of the resonator 107 shown in the fourth embodiment.
  • protrusion part 10a, 10b, 11a, 11b seems to be equal, the length of these protrusion parts may differ. Moreover, it is not restricted to the structure which has a protrusion part in all the corners. A configuration in which a corner with a protruding portion and a corner without a protruding portion are also conceivable.
  • a linear reciprocating motion in a direction perpendicular to the longitudinal direction of the first beam 2 is applied to the first beam 2 at the vibration input location 3 as indicated by an arrow 81.
  • the first beam 2 vibrates laterally.
  • the plurality of second beams 5a and 5b are all restricted at the first beam 2 by the plurality of branch points 4a and 4b, respectively, the plurality of second beams 5a and 5b are also the first beam.
  • torsional vibrations as indicated by arrows 82a and 82b are generated in the plurality of second beams 5a and 5b, respectively.
  • the plurality of third beams 6a and 6b are also restrained by the first beam 2 by the plurality of branch points 4a and 4b, the plurality of third beams 6a and 6b are also subjected to the lateral vibration of the first beam 2.
  • torsional vibrations as indicated by arrows 83a and 83b are also generated in the plurality of third beams 6a and 6b. Since the ends of the second beams 5 a and 5 b are coupled to each other by the fourth beam 8, the torsional vibration generated in the second beams 5 a and 5 b influence each other by the fourth beam 8. The same applies to the third beams 6a and 6b because the ends are coupled to each other by the fifth beam 9.
  • the effect of confining vibration energy can be exhibited. That is, in such a resonator, the Q value can be increased.
  • resonator 110 As shown in FIG. 10, in resonator 110 as the first example of the resonator in the present embodiment, the base material is substrate 12, and first beam 2 is separated from substrate 12 and the surface of substrate 12. It extends parallel to.
  • the vibration input location 3 is, for example, a square area of 10 ⁇ m ⁇ 10 ⁇ m.
  • a side view of the resonator 110 is shown in FIG.
  • the resonator 110 has a structure corresponding to the resonator 101 shown in the first embodiment.
  • the base material is substrate 12, and first beam 2 is spaced from substrate 12 and the surface of substrate 12. It extends parallel to.
  • a side view of the resonator 111 is shown in FIG.
  • the resonator 111 has a structure corresponding to the resonator 102 described in the first embodiment.
  • the electrode 13 is disposed at a position facing the vibration input location 3 on the surface of the substrate 12, and the electrode 13 is placed between the electrode 13 and the vibration input location 3. It is preferable to apply a linear reciprocating motion to the first beam 2 by generating electric power. This is because a linear reciprocating motion can be easily and reliably applied at the vibration input location 3 if this is the case.
  • the resonator 112 in the present embodiment has a structure corresponding to the resonator 109 shown in the fifth embodiment.
  • the resonator 112 has a substrate 12 as a base material, and a vibration input point 3 that is fixed to the substrate 12 at both ends and imparts a linear reciprocating motion in a direction perpendicular to the longitudinal direction.
  • the beam 2 and the first beam 2 are branched to one side from a plurality of branch points 4a and 4b different from the vibration input point 3, and a plurality of second beams are generated for generating torsional vibration based on the linear reciprocating motion. 2 beams 5a and 5b.
  • the first beam 2 is not directly connected to the main body of the substrate 12 but is connected via fixed connection portions 14 a and 14 b provided on the upper surface of the substrate 12.
  • the fixed connection portions 14 a and 14 b may be formed of the same material as that of the first beam 2.
  • the fixed connection portions 14 a and 14 b are integrated with the substrate 12 and act as fixed ends with respect to both ends of the first beam 2.
  • the resonator 112 includes a plurality of third beams 6a and 6b for generating torsional vibrations extending from the plurality of branch points 4a and 4b to the side opposite to the plurality of second beams 5a and 5b.
  • the tips of the plurality of second beams 5 a and 5 b are coupled by the fourth beam 8
  • the tips of the plurality of third beams 6 a and 6 b are coupled by the fifth beam 9. Both ends of the fourth beam 8 and the fifth beam 9 protrude as free ends. Both ends of the fourth beam 8 are protrusions 10a and 10b, respectively.
  • an electrode 13 is provided on the surface of the substrate 12 at a position where the vibration input portion 3 of the first beam 2 is projected onto the upper surface of the substrate 12.
  • a wiring 16 is drawn from the electrode 13.
  • a pad 15 is provided on the surface of the substrate 12 at a position that is not hidden by any beam as viewed from above, and the wiring 16 is electrically connected to the electrode 13 and the pad 15 along the surface of the substrate 12. is doing.
  • the electrode 13 is for imparting a linear reciprocating motion to the first beam 2 by generating an electrostatic force between the electrode 13 and the vibration input location 3.
  • the vibration input location 3 may be, for example, a 10 ⁇ m square area.
  • the substrate 12 may be a glass substrate or a gallium arsenide (GaAs) substrate, for example.
  • the first beam 2 or the like may be lifted from the surface of the substrate 12 by 2 ⁇ m, for example.
  • the electrode 13 is made of, for example, gold.
  • FIGS. 15 to 17 show how the resonator 112 vibrates.
  • 15 to 17 display the deformation based on the simulation result obtained by the computer.
  • the entire resonator 112 is ... ⁇ 15 ⁇ 16 ⁇ 15 ⁇ FIG. 17 ⁇ FIG. 15 ⁇ FIG. 16 ⁇ FIG. 15 ⁇ FIG. 17 ⁇ FIG. 15 ⁇ FIG. 16 ⁇ FIG. 15 ⁇ FIG. 17 ⁇ FIG.
  • the whole vibration including both torsional vibration and lateral vibration is repeated while taking each state in order.
  • torsional vibration is generated as shown in FIGS.
  • FIGS. 15 to 17 many small arrows are displayed on the surface of each beam, but these arrows are displayed for the sake of simulation.
  • the simulation result shown here is merely an example, and the magnitude of the signal input to the pad 15, the frequency, the length of each beam, the arrangement of the branching points, the number of beams to be branched, the angle of branching, the cross-sectional shape of the beam,
  • the mode of vibration can be appropriately changed by changing parameters such as.
  • the plurality of second beams 5a and 5b and the plurality of third beams 6a and 6b are each two, but the number may be other than two.
  • the effect of using the torsional vibration generated in this way as the vibration of the resonator and the use as the resonator are the same as described in the first embodiment.
  • the vibration energy stored in the vibration part by the torsional vibration of the plurality of second beams 5 a and 5 b and the plurality of third beams 6 a and 6 b can be electrically extracted through the electrode 13 and the pad 15.
  • a chromium film 205 is formed by vapor-depositing chromium on the upper surface of the SOI wafer 204.
  • the SOI wafer 204 has a SiO 2 layer 202 disposed on a Si layer 201 and a Si layer 203 disposed thereon.
  • the thickness of the Si layer 203 is, for example, 10 ⁇ m.
  • the Cr film 205 is formed on the upper surface of the Si layer 203.
  • the thickness of the Cr layer 205 is, for example, 500 mm.
  • a Cr film pattern 206 is formed by performing first photolithography on the Cr film 205.
  • a plan view of this state is shown in FIG.
  • the Cr film pattern 206 is formed in an island shape at, for example, two places. These Cr film patterns 206 correspond to regions where the fixed connection portions 14a and 14b are formed later.
  • an Al film 207 is formed so as to completely cover the Cr film pattern 206 by depositing aluminum on the upper surface.
  • the thickness of the Al film 207 is, for example, 1000 mm.
  • the remaining Al film pattern 208 is formed according to a certain pattern.
  • a plan view of this state is shown in FIG.
  • the Al film pattern 208 has a planar shape including portions corresponding to the beams of the resonator.
  • the Si layer 203 is removed, and the SiO 2 layer 202 is exposed.
  • the Si layer pattern 209 is formed. A plan view of this state is shown in FIG.
  • the Si layer pattern 209 has a planar shape including portions corresponding to the beams of the resonator. At this point, the Cr film pattern 206 is wrapped and hidden inside the Al film pattern 208.
  • the Al film pattern 208 (see FIG. 24) is removed, and the Si layer pattern 209 is dry etched using the Cr film pattern 206 as a mask as shown in FIG.
  • the dry etching performed here is ICP (Inductively Coupled Plasma) etching. This dry etching removes, for example, 4 ⁇ m from the upper surface in the region of the Si layer pattern 209 that is not covered with the Cr film pattern 206. Further, the structure shown in FIG. 27 is obtained by removing the Cr film pattern 206. A plan view of this state is shown in FIG. At this point, the Si layer pattern 209 is placed on the SiO 2 layer 202, but the Si layer pattern 209 includes a low portion 209a and a high portion 209b. The high portion 209 b is a portion that was previously covered with the Cr film pattern 206.
  • a chromium film is formed as a seed layer on the top surface of the substrate 12 which is a separately prepared glass substrate. Further, a gold layer is formed so as to cover the entire surface of the chromium film.
  • a lamination pattern in which the Au layer 212 is placed on the upper side of the Cr layer 211 is formed as shown in FIG.
  • a plan view of this state is shown in FIG.
  • An electrode 13 for applying a linear reciprocating motion to the beam by electrostatic force is disposed at the center of the substrate 12, and a pad 15 is disposed toward the end of the substrate 12.
  • the electrode 13 and the pad 15 are electrically connected to each other by a wiring 16.
  • the electrode 13, the pad 15, and the wiring 16 are integrally formed, and all have a two-layer structure of Au / Cr.
  • the structure shown in FIG. 27 is turned upside down and bonded to the structure shown in FIG. Bonding is performed by anodic bonding. As a result, the structure shown in FIG. 31 is obtained.
  • the high portion 209 b of the Si layer pattern 209 is bonded to the surface of the substrate 12, and the low portion 209 a is separated from the surface of the substrate 12.
  • the Si layer 201 is removed by etching.
  • the SiO 2 layer 202 is removed by etching.
  • a structure as shown in FIG. 32 is obtained. That is, the resonator 112 shown in FIG. 14 is obtained.
  • a resonator array according to an eighth embodiment of the present invention With reference to FIG. 33, a resonator array according to an eighth embodiment of the present invention will be described.
  • both the portion to be fixed to the base material and the portion to be the free end in the resonator described in any of the above embodiments are replaced with the connection portions to the adjacent resonator.
  • a resonator array in which a plurality of resonators are connected That is, for example, as shown in FIG.
  • one central portion is used as the fixed end, but the number and position of the fixed ends may be different. As shown in FIG.
  • a structure may be provided in which some substrate is provided and this resonator array is supported by the substrate.
  • the resonator array is arranged in parallel to the substrate surface apart from the substrate surface, except for the connecting portion for support. Further, this resonator array may be supported by some means without using a substrate.
  • vibration is generated by applying linear reciprocating vibration to one or a plurality of positions of the beam. At that time, torsional vibration occurs in some of the beams. For example, the deformation shown in FIGS. 34 and 35 occurs.
  • FIGS. 34 and 35 occurs.
  • the whole vibration including both torsional vibration and lateral vibration is repeated while taking each state in order.
  • vibration can be generated in parallel at a large number of locations and used as a resonator.
  • by changing the length or the cross-sectional area depending on the part without changing the lattice of the array at equal intervals it is possible to have different resonance frequencies depending on the part in one resonator array.
  • by configuring as an integrated resonator array in which a plurality of resonator portions are connected the phases of vibrations of the resonator portions can be aligned. The form will be described.
  • a resonator 113 as a first example of the resonator according to the present embodiment includes a base material 1 and one end fixed to the base material 1 and a straight line in a direction perpendicular to the longitudinal direction.
  • a first beam 2 having a plurality of vibration input locations 3a, 3b, 3c for imparting reciprocating motion and a plurality of branch locations 4a, 4b different from the vibration input locations of the first beam 2
  • a plurality of second beams 5a, 5b for branching to the side and generating torsional vibration based on the linear reciprocating motion.
  • one end of the first beam 2 is fixed to the base material 1a and the other end is fixed to the base material 1b.
  • the configuration of the other parts is the same as that of the resonator 113 given as the first example in the present embodiment.
  • each of the plurality of second beams 5a and 5b is constrained to the first beam 2 by the plurality of branch points 4a and 4b, respectively.
  • 5a and 5b are also displaced by the lateral vibration of the first beam 2, and as a result, torsional vibrations as indicated by arrows 82a and 82b are generated in the plurality of second beams 5a and 5b, respectively.
  • a resonator using such a torsional vibration can be a resonator having a high Q value.
  • This resonator can be used for filter circuits and transmitters.
  • the resonator 115 (Embodiment 10) (Constitution)
  • the resonator 115 (Embodiment 10) (Constitution)
  • the resonator 115 (Embodiment 10) (Constitution)
  • the resonator 115 generates torsional vibrations extending from the plurality of branch points 4a and 4b to the side opposite to the plurality of second beams 5a and 5b.
  • a plurality of third beams 6a and 6b are provided.
  • the structure of other parts is the same as that of the resonator 114 shown in the ninth embodiment.
  • torsional vibrations as indicated by arrows 82a and 82b are generated in the plurality of second beams 5a and 5b, respectively. Furthermore, since the plurality of third beams 6a and 6b are also restrained by the first beam 2 by the plurality of branch points 4a and 4b, the plurality of third beams 6a and 6b are also subjected to the lateral vibration of the first beam 2. As a result, torsional vibrations as indicated by arrows 83a and 83b are also generated in the plurality of third beams 6a and 6b.
  • both ends of the fourth beam 8 and the fifth beam 9 protrude as free ends.
  • Both ends of the fourth beam 8 are protrusions 10a and 10b, respectively.
  • the ends of the protrusions 10a and 10b are free ends. That is, the protrusions 10a and 10b are in a cantilever state.
  • Both ends of the fifth beam 9 are protrusions 11a and 11b, respectively.
  • the ends of the protrusions 11a and 11b are free ends. That is, the protruding portions 11a and 11b are in a cantilever state.
  • the structure of other parts is the same as that of the resonator 115 shown in the tenth embodiment.
  • the lengths of the protrusions 10a, 10b, 11a, and 11b appear to be equal, but the lengths of these protrusions may be different. Moreover, it is not restricted to the structure which has a protrusion part in all the corners. A configuration in which a corner with a protruding portion and a corner without a protruding portion are also conceivable.
  • torsional vibrations as indicated by arrows 82a and 82b are generated in the plurality of second beams 5a and 5b, respectively. Furthermore, since the plurality of third beams 6a and 6b are also restrained by the first beam 2 by the plurality of branch points 4a and 4b, the plurality of third beams 6a and 6b are also subjected to the lateral vibration of the first beam 2. As a result, torsional vibrations as indicated by arrows 83a and 83b are also generated in the plurality of third beams 6a and 6b.
  • the effect of confining vibration energy can be exhibited. That is, in such a resonator, the Q value can be increased.
  • the resonator 118 in the present embodiment has a structure corresponding to the resonator 117 shown in the eleventh embodiment. That is, the resonator 118 includes a substrate 12 as a base material and a plurality of vibration input locations 3a, 3b, 3c for fixing linear reciprocation in a direction perpendicular to the longitudinal direction. And a plurality of branching points 4a, 4b different from the plurality of vibration input points 3a, 3b, 3c of the first beam 2 to one side, respectively.
  • a plurality of second beams 5a and 5b for generating torsional vibration are provided.
  • the first beam 2 is not directly connected to the main body of the substrate 12 but is connected via fixed connection portions 14 a and 14 b provided on the upper surface of the substrate 12.
  • the fixed connection portions 14 a and 14 b may be formed of the same material as that of the first beam 2.
  • the fixed connection portions 14 a and 14 b are integrated with the substrate 12 and act as fixed ends with respect to both ends of the first beam 2.
  • the resonator 118 includes a plurality of third beams 6a and 6b for generating torsional vibrations extending from the plurality of branch points 4a and 4b to the side opposite to the plurality of second beams 5a and 5b.
  • the tips of the plurality of second beams 5 a and 5 b are coupled by the fourth beam 8
  • the tips of the plurality of third beams 6 a and 6 b are coupled by the fifth beam 9.
  • Both ends of the fourth beam 8 and the fifth beam 9 protrude as free ends. Both ends of the fourth beam 8 are protrusions 10a and 10b, respectively.
  • a plurality of electrodes 13a, 13b, 13c are formed on the surface of the substrate 12. Each is provided.
  • a wiring 16 is drawn from each of the plurality of electrodes 13a, 13b, and 13c.
  • a plurality of pads 15 a, 15 b, 15 c are provided on the surface of the substrate 12 at positions that are not hidden by any of the beams as viewed from above, and the wiring 16 extends along the surface of the substrate 12 and has a plurality of electrodes 13 a, 13 b.
  • the plurality of electrodes 13a, 13b, and 13c impart linear reciprocating motion to the first beam 2 by generating an electrostatic force between the plurality of electrodes 13a, 13b, and 13c and the plurality of vibration input locations 3a, 3b, and 3c. Is to do.
  • Each of the plurality of vibration input locations 3a, 3b, 3c may be, for example, a 10 ⁇ m square region.
  • the substrate 12 may be, for example, a glass substrate or a gallium arsenide (GaAs) substrate.
  • the first beam 2 or the like may be lifted from the surface of the substrate 12 by 2 ⁇ m, for example.
  • the plurality of electrodes 13a, 13b, and 13c are made of, for example, gold.
  • the base material is the substrate 12, and the first beam 2 is separated from the substrate 12 and extends parallel to the surface of the substrate 12.
  • electrodes 13a, 13b, and 13c are individually arranged at positions facing each of a plurality of vibration input locations 3a, 3b, and 3c on the surface of substrate 12, respectively.
  • the electrodes 13a, 13b, and 13c are for imparting a linear reciprocating motion to the first beam 2 by generating an electrostatic force between the electrodes 13a, 13b, and 13c and the vibration input locations 3a, 3b, and 3c. is there.
  • the potential difference between the electrode and the vibration input location is such that each of the electrodes simultaneously applies a linear reciprocating motion to the plurality of vibration input locations 3a, 3b, 3c.
  • An input control unit (not shown) for controlling The input control unit may simultaneously apply linear reciprocating motions having the same phase to the vibration input locations adjacent to each other.
  • the input control unit may simultaneously apply linear reciprocating motions having phases shifted from each other to the vibration input locations adjacent to each other. When the phases are the same, different, or different, how much the phase is shifted may be appropriately determined according to the application.
  • the resonator 118 by inputting a constant voltage between the plurality of pads 15a, 15b, 15c and the first beam 2, the plurality of electrodes 13a, 13b, 13c and the first beam 2 are input. A potential difference can be generated between the plurality of vibration input locations 3a, 3b, 3c.
  • the voltage input between the plurality of pads 15 and the first beam 2 may be, for example, 1 to 2V.
  • FIGS. 47 to 49 display the deformation based on the simulation result obtained by the computer.
  • the entire resonator 118 is ... ⁇ 47 ⁇ 48 ⁇ FIG. 47 ⁇ FIG. 49 ⁇ FIG. 47 ⁇ FIG. 48 ⁇ FIG. 47 ⁇ FIG. 49 ⁇ FIG. 47 ⁇ FIG. 48 ⁇ FIG. 47 ⁇ FIG. 49 ⁇ FIG. 47 ⁇ FIG. 48 ⁇ FIG. 47 ⁇ FIG. 49 ⁇ FIG. 47 ⁇ FIG.
  • the whole vibration including both torsional vibration and lateral vibration is repeated while taking each state in order.
  • torsional vibration occurs as shown in FIGS.
  • FIG. 47 to FIG. 49 many small arrows are displayed on the surface of each beam, but these arrows are displayed for the sake of simulation.
  • a simulation is performed when a voltage is applied to the electrodes 13a and 13c at both ends instead of applying a voltage to the center electrode 13b of the resonator 118. I did it. However, a voltage shifted by ⁇ is applied to the electrodes 13a and 13c, not a voltage having the same phase. That is, INPUT1 and INPUT2 have phases shifted from each other by ⁇ . In this case, a linear reciprocating motion is applied only at the vibration input locations 3a and 3c. A corresponding circuit diagram is shown in FIG.
  • the entire resonator 118 is ... ⁇ 47 ⁇ 52 ⁇ 47 ⁇ 53 ⁇ 47 ⁇ 52 ⁇ 47 ⁇ 53 ⁇ 47 ⁇ 52 ⁇ 47 ⁇ 53 ⁇ 47 ⁇ 52 ⁇ 47 ⁇ 53 ⁇ 47 ⁇ 52 ⁇ 47 ⁇ .
  • the whole vibration including both torsional vibration and lateral vibration is repeated while taking each state in order.
  • torsional vibration is generated as shown in FIGS.
  • a switch may be provided in the middle of the wiring connected to each electrode as shown in FIG. These switches may be controlled by the above-described input control unit.
  • the simulation result shown here is only an example, and the magnitude of the signal input to the pads 15a, 15b and 15c, the frequency, the length of each beam, the arrangement of the branching location, the number of beams to be branched, the angle to be branched, the beam
  • the mode of vibration can be changed as appropriate by changing parameters such as the cross-sectional shape.
  • the plurality of second beams 5a and 5b and the plurality of third beams 6a and 6b are each two, but the number may be other than two.
  • the effect of using the torsional vibration generated in this way as the vibration of the resonator and the use as the resonator are the same as described in the first embodiment.
  • the vibration energy stored in the vibration portion by the torsional vibration of the plurality of second beams 5a, 5b and the plurality of third beams 6a, 6b is electrically transmitted through the electrodes 13a, 13b, 13c and the pads 15a, 15b, 15c. Can be taken out.
  • a Cr film 205 is formed by vapor-depositing chromium on the upper surface of the SOI wafer 204.
  • the SOI wafer 204 has a SiO 2 layer 202 disposed on a Si layer 201 and a Si layer 203 disposed thereon.
  • the thickness of the Si layer 203 is, for example, 10 ⁇ m.
  • the Cr film 205 is formed on the upper surface of the Si layer 203.
  • the thickness of the Cr layer 205 is, for example, 500 mm.
  • the Cr film pattern 206 is formed by performing the first photolithography on the Cr film 205.
  • a plan view of this state is shown in FIG.
  • the Cr film pattern 206 is formed in an island shape at two locations. These Cr film patterns 206 correspond to regions where the fixed connection portions 14a and 14b are formed later.
  • an Al film 207 is formed so as to completely cover the Cr film pattern 206 by depositing aluminum on the upper surface.
  • the thickness of the Al film 207 is, for example, 1000 mm.
  • the remaining Al film pattern 208 is formed according to a certain pattern.
  • a plan view of this state is shown in FIG.
  • the Al film pattern 208 has a planar shape including portions corresponding to the beams of the resonator.
  • the Si layer 203 is removed, and the SiO 2 layer 202 is exposed.
  • the Si layer pattern 209 is formed. A plan view of this state is shown in FIG.
  • the Si layer pattern 209 has a planar shape including portions corresponding to the beams of the resonator. At this point, the Cr film pattern 206 is wrapped and hidden inside the Al film pattern 208.
  • the Al film pattern 208 (see FIG. 61) is removed, and the Si layer pattern 209 is dry etched using the Cr film pattern 206 as a mask as shown in FIG.
  • the dry etching performed here is ICP (Inductively Coupled Plasma) etching. This dry etching removes, for example, 4 ⁇ m from the upper surface in the region of the Si layer pattern 209 that is not covered with the Cr film pattern 206. Further, the structure shown in FIG. 26 is obtained by removing the Cr film pattern 206. A plan view of this state is shown in FIG. At this point, the Si layer pattern 209 is placed on the SiO 2 layer 202, but the Si layer pattern 209 includes a low portion 209a and a high portion 209b. The high portion 209 b is a portion that was previously covered with the Cr film pattern 206.
  • a chromium film is formed as a seed layer on the top surface of the substrate 12 which is a separately prepared glass substrate. Further, a gold layer is formed so as to cover the entire surface of the chromium film.
  • a lamination pattern in which the Au layer 212 is placed on the upper side of the Cr layer 211 is formed as shown in FIG.
  • a plan view of this state is shown in FIG.
  • a plurality of electrodes 13a, 13b, 13c for applying a linear reciprocating motion to the beam by electrostatic force are arranged in a line in the center of the substrate 12, and pads 15a, 15b are arranged at the end of the substrate 12. , 15c are arranged.
  • Corresponding electrodes 13 a, 13 b, 13 c and pads 15 a, 15 b, 15 c are electrically connected to each other by wiring 16.
  • the electrodes, pads, and wirings shown here are integrally formed, and all have a two-layer structure of Au / Cr.
  • the structure shown in FIG. 64 is turned upside down and bonded to the structure shown in FIG. Bonding is performed by anodic bonding. As a result, the structure shown in FIG. 68 is obtained.
  • the high portion 209 b of the Si layer pattern 209 is bonded to the surface of the substrate 12, and the low portion 209 a is separated from the surface of the substrate 12.
  • the Si layer 201 is removed by etching.
  • the SiO 2 layer 202 is removed by etching.
  • a structure as shown in FIG. 69 is obtained. That is, the resonator 118 shown in FIG. 44 is obtained.
  • the number of vibration input locations is three has been described.
  • the number of vibration input locations may be a number other than three.
  • a resonator array according to a thirteenth embodiment of the present invention With reference to FIG. 70, a resonator array according to a thirteenth embodiment of the present invention will be described.
  • the portion to be fixed to the base material and the portion to be the free end in the resonator described in any one of the above embodiments are replaced with the connection portions to the adjacent resonator.
  • This is a resonator array in which a plurality of resonators are connected. That is, for example, as shown in FIG. Here, of the five protrusions at the front and rear, one central portion is used as the fixed end, but the number and position of the fixed ends may be different. As shown by a two-dot chain line in FIG.
  • FIG. 72 (a) conceptually shows a cross-sectional view taken along the line XXXIVA-XXXIVA in FIG. Similarly, FIG. 72B conceptually shows a cross-sectional view taken along the line XXXIVB-XXXIVB, and FIG.
  • 72C conceptually shows a cross-sectional view taken along the line XXXIVC-XXXIVC.
  • the electrodes to which INPUT1 is applied and the electrodes to which INPUT2 having a phase shifted by ⁇ with respect to INPUT1 are vertically viewed from among the electrodes arranged in a matrix on the substrate surface in plan view. However, it is set to alternate even when viewed from the side.
  • a resonator array having a total of nine vibration input locations of 3 ⁇ 3 is shown, but the number of vibration input locations may be other than this.
  • the number of the resonators included in the resonator array in the vertical or horizontal direction is 3 in FIG. 70, but may be other than 3.
  • the size of the resonator array may be larger or smaller than that shown in FIG.
  • the resonator array may be configured such that tens or hundreds of resonators are connected.
  • FIG. 36 is a diagram for explaining the operation of the MEMS resonator according to the present invention.
  • An AC voltage VI is applied to the counter electrode 152 from a high frequency power source.
  • the main voltage VP is applied to the torsional vibrator 154 from the main voltage power source via the coil L.
  • an alternating electrostatic force is generated between the torsional vibrator 154 and the counter electrode 152, and the torsional vibrator 154 is torsionally vibrated around the central axis of the beam by the electrostatic force. Due to the torsional vibration of the torsional vibrator 154, the electrostatic capacitance between the torsional vibrator 154 and the counter electrode 152 changes. A change in capacitance is output as a high-frequency signal VO.
  • the “torsional vibrator” here refers to the beam portion in the resonator described in the first to thirteenth embodiments.
  • the whole combination of such beams corresponds to the “torsional vibrator”.
  • the substrate is not included in the torsional vibrator.
  • FIG. 37 shows an example in which a MEMS resonator is used in the filter circuit.
  • the filter circuit shown in this circuit diagram is connected between capacitors 162, 164, 166 connected in series between an input terminal TI and an output terminal TO, and between a connection node of the capacitors 162, 164 and a ground node.
  • MEMS resonator 168 and MEMS resonator 170 connected between the connection node of capacitors 164 and 166 and the ground node.
  • the resonator according to the present invention can be used as the MEMS resonators 168 and 170 in such a filter circuit.
  • FIG. 38 shows an example in which a MEMS resonator is used for the oscillation circuit.
  • the oscillation circuit shown in this circuit diagram includes an inverter INV1 that receives supply of a power supply potential from a power supply node VDD, and an inverter INV2 that receives an output of the inverter INV1 as an input.
  • the output signal of the oscillation circuit is output from the output of the inverter INV2.
  • This oscillation circuit further includes a capacitor C1 having one end grounded and the other end connected to the input of the inverter INV1, a variable capacitor CL1 connected in parallel with the capacitor C1, and a DC voltage source Vp having a negative electrode grounded.
  • a resistor Rp having one end connected to the positive electrode of the DC voltage source Vp, a capacitor Cp connected between the other end of the resistor Rp and the input of the inverter INV1, and a series connection between the output of the inverter INV1 and the ground.
  • a MEMS resonator 172 connected between a connection node of the resistor Rd and the capacitor CL2 and the other end of the resistor Rp.
  • the oscillation circuit further includes a feedback resistor Rf that connects the input and output of the inverter INV1. In this transmission circuit, the output of the inverter INV1 is fed back to the input by a filter including the MEMS resonator 172, and a specific resonance frequency component is amplified. As a result, the circuit oscillates.
  • the resonator according to the present invention can be used as the MEMS resonator 172 in such an oscillation circuit.
  • the cross-sectional shape of the beam is a square, but the cross-sectional shape may be a shape other than a square. Moreover, it is good also as making the magnitude
  • FIG. 20 is a plan view corresponding to FIG.
  • FIG. 30 is a plan view corresponding to FIG. 29. It is explanatory drawing of the 9th process of the manufacturing method of the resonator in this Embodiment. It is explanatory drawing of the 10th process of the manufacturing method of the resonator in this Embodiment. It is a perspective view of the resonator array in Embodiment 8 based on this invention. It is 1st explanatory drawing of a mode that the resonator array in Embodiment 8 based on this invention vibrates. It is 2nd explanatory drawing of a mode that the resonator array in Embodiment 8 based on this invention vibrates.
  • FIG. 46 is a circuit diagram corresponding to FIG. 45. It is 1st explanatory drawing of a mode that the resonator in Embodiment 12 based on this invention vibrates. It is 2nd explanatory drawing of a mode that the resonator in Embodiment 12 based on this invention vibrates. It is 3rd explanatory drawing of a mode that the resonator in Embodiment 12 based on this invention vibrates. It is explanatory drawing of the 2nd application pattern in the simulation performed about the resonator in Embodiment 12 based on this invention. FIG.
  • FIG. 51 is a circuit diagram corresponding to FIG. 50. It is 4th explanatory drawing of a mode that the resonator in Embodiment 12 based on this invention vibrates. It is 5th explanatory drawing of a mode that the resonator in Embodiment 12 based on this invention vibrates. It is explanatory drawing of the example which provided the switch in the resonator in Embodiment 12 based on this invention. It is explanatory drawing of the 1st process of the manufacturing method of the resonator in Embodiment 12 based on this invention. It is explanatory drawing of the 2nd process of the manufacturing method of the resonator in Embodiment 12 based on this invention. FIG. 57 is a plan view corresponding to FIG. 56.
  • FIG. 60 is a plan view corresponding to FIG. 59. It is explanatory drawing of the 5th process of the manufacturing method of the resonator in Embodiment 12 based on this invention.
  • FIG. 62 is a plan view corresponding to FIG. 61. It is explanatory drawing of the 6th process of the manufacturing method of the resonator in Embodiment 12 based on this invention.
  • FIG. 67 is a plan view corresponding to FIG. 66. It is explanatory drawing of the 9th process of the manufacturing method of the resonator in Embodiment 12 based on this invention. It is explanatory drawing of the 10th process of the manufacturing method of the resonator in Embodiment 12 based on this invention. It is a perspective view of the resonator array in Embodiment 13 based on this invention.
  • FIG. 71 is a circuit diagram corresponding to FIG. 70.
  • (A) to (c) are sectional views taken along arrows XXXIVA-XXXIVA, XXXIVB-XXXIVB, and XXXIVC-XXXIVC in FIG. 70, respectively.

Abstract

La présente invention concerne un résonateur dont une fréquence de résonance peut être aisément augmentée sans réduire fortement les dimensions, le bilan énergétique pouvant être amélioré. Un résonateur est pourvu d'un substrat (12) en tant que matériau de base ; d'un premier faisceau (2), qui est fixé au substrat (12) aux deux extrémités par fixation de sections de connexion (14a, 14b), et qui présente une section d'entrée de vibration (3) sur le faisceau pour appliquer un mouvement alternatif linéaire, de la direction verticale à la direction longitudinale ; et de deuxièmes faisceaux (5a, 5b), qui sont branchés sur un côté à partir d'une pluralité de sections de branchement (4a, 4b) différentes de la section d'entrée de vibration (3) sur le premier faisceau (2) et qui génèrent des vibrations de torsion basées sur le mouvement alternatif linéaire. En outre, le résonateur (112) est pourvu de troisièmes faisceaux (6a, 6b) qui s'étendent sur le côté opposé aux deuxièmes faisceaux (5a, 5b) à partir des sections de branchement (4a, 4b), pour générer des vibrations de torsion.
PCT/JP2009/053916 2008-03-04 2009-03-03 Résonateur et réseau de résonateur WO2009110442A1 (fr)

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US12/921,008 US8872603B2 (en) 2008-03-04 2009-03-03 Resonator and resonator array

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WO2011129352A1 (fr) * 2010-04-16 2011-10-20 三洋電機株式会社 Dispositif mems et procédé de fabrication associé
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US8887573B2 (en) * 2012-02-21 2014-11-18 Taiwan Semiconductor Manufacturing Co., Ltd. MEMS vacuum level monitor in sealed package
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JPWO2009110442A1 (ja) 2011-07-14
US8872603B2 (en) 2014-10-28

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