WO2009109171A3 - Verfahren zur herstellung einer multikristallinen chromschicht als substratschicht für den aufbau von solarzellen auf einem metallischen träger - Google Patents

Verfahren zur herstellung einer multikristallinen chromschicht als substratschicht für den aufbau von solarzellen auf einem metallischen träger Download PDF

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Publication number
WO2009109171A3
WO2009109171A3 PCT/DE2009/000278 DE2009000278W WO2009109171A3 WO 2009109171 A3 WO2009109171 A3 WO 2009109171A3 DE 2009000278 W DE2009000278 W DE 2009000278W WO 2009109171 A3 WO2009109171 A3 WO 2009109171A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
chromium layer
solar cells
producing
assembly
Prior art date
Application number
PCT/DE2009/000278
Other languages
English (en)
French (fr)
Other versions
WO2009109171A2 (de
Inventor
Bernd Peter Schmitz
Bernd Jensen
Otto Hosbach
Original Assignee
Iss Innovative Solarsysteme Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Iss Innovative Solarsysteme Gmbh filed Critical Iss Innovative Solarsysteme Gmbh
Priority to DE112009001062T priority Critical patent/DE112009001062A5/de
Publication of WO2009109171A2 publication Critical patent/WO2009109171A2/de
Publication of WO2009109171A3 publication Critical patent/WO2009109171A3/de

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/04—Electroplating: Baths therefor from solutions of chromium
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C25D5/52—After-treatment of electroplated surfaces by brightening or burnishing
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/06—Wires; Strips; Foils
    • C25D7/0614—Strips or foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

Die Erfindung betrifft ein Verfahren zur Herstellung einer multikristallinen Chromschicht als Substratschicht für den Aufbau von Solarzellen auf einem metallischen Träger, insbesondere für die Herstellung von Dünnschicht-Solarzellen auf galvanischen Bandanlagen, bei dem die Chromschicht mit Hilfe eines Tetrachromat-Elektrolyten elektrochemisch abgeschieden wird, der folgende Zusammensetzung aufweist: ・350 - 40O g*l-1 CrO3, ・40 - 50 g*l-1 NaOH, ・ 2,5 - 2,7 g*l-1 H2SO4, ・ 5 - 10 g*l-1 Cr-III, wobei ・die Stromausbeute: 25 - 30 % und ・die Abscheiderate: 0,5 - 1 μm*min-1 betragen. Anschließend erfolgt eine Glättung der Oberfläche der Chromschicht durch Polieren bis zu einer Rauheit Ra von < 15 Nanometer und eine Gasnitrierung. Mit dem erfindungsgemäßen Verfahren werden ein gleichmäßiger Schichtauftrag, bei Schichtstärken von vorzugsweise 5 - 8 μm, sowie eine vollständige Dichtheit und Porenfreiheit der Chromschicht erreicht. Eine entsprechende Chromschicht weist eine hohe Barrierewirkung gegen das Diffundieren von Eisenatomen auf.
PCT/DE2009/000278 2008-03-01 2009-02-25 Verfahren zur herstellung einer multikristallinen chromschicht als substratschicht für den aufbau von solarzellen auf einem metallischen träger WO2009109171A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE112009001062T DE112009001062A5 (de) 2008-03-01 2009-02-25 Verfahren zur Herstellung einer multikristallinen Chromschicht als Substratschicht für den Aufbau von Solarzellen auf einem metallischen Träger

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102008012164.9 2008-03-01
DE102008012164 2008-03-01
DE102008024271A DE102008024271A1 (de) 2008-03-01 2008-05-20 Verfahren zur Herstellung einer Chromschicht auf einem metallischen Träger
DE102008024271.3 2008-05-20

Publications (2)

Publication Number Publication Date
WO2009109171A2 WO2009109171A2 (de) 2009-09-11
WO2009109171A3 true WO2009109171A3 (de) 2009-11-12

Family

ID=40936416

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2009/000278 WO2009109171A2 (de) 2008-03-01 2009-02-25 Verfahren zur herstellung einer multikristallinen chromschicht als substratschicht für den aufbau von solarzellen auf einem metallischen träger

Country Status (2)

Country Link
DE (2) DE102008024271A1 (de)
WO (1) WO2009109171A2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012010315A1 (de) 2012-05-24 2013-11-28 Eurosun Solartechnik UG (haftungsbeschränkt) Substrat einer Chalkopyrit-Dünnschichtzelle und Verfahren zu seiner Herstellung

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2392871A (en) * 2002-07-11 2004-03-17 Willett Int Ltd Operating ink jet valves during printing
DE10257165A1 (de) * 2002-12-02 2004-06-24 Cis Solartechnik Gmbh Verfahren zur Herstellung von Dünnschichtsolarzellen mit einer CuInSe2-Schicht auf einem metallischen, bandförmigen Substrat
DE102004039056A1 (de) * 2004-08-11 2006-03-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung eines Substrats für Solarzellen, derartige Substrate sowie deren Verwendung
US20070227895A1 (en) * 2006-03-31 2007-10-04 Bishop Craig V Crystalline chromium deposit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2392871A (en) * 2002-07-11 2004-03-17 Willett Int Ltd Operating ink jet valves during printing
DE10257165A1 (de) * 2002-12-02 2004-06-24 Cis Solartechnik Gmbh Verfahren zur Herstellung von Dünnschichtsolarzellen mit einer CuInSe2-Schicht auf einem metallischen, bandförmigen Substrat
DE102004039056A1 (de) * 2004-08-11 2006-03-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung eines Substrats für Solarzellen, derartige Substrate sowie deren Verwendung
US20070227895A1 (en) * 2006-03-31 2007-10-04 Bishop Craig V Crystalline chromium deposit

Also Published As

Publication number Publication date
WO2009109171A2 (de) 2009-09-11
DE112009001062A5 (de) 2011-01-27
DE102008024271A1 (de) 2009-09-10

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