WO2009090841A1 - Capteur d'accélération à capacité électrostatique - Google Patents

Capteur d'accélération à capacité électrostatique Download PDF

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Publication number
WO2009090841A1
WO2009090841A1 PCT/JP2008/073435 JP2008073435W WO2009090841A1 WO 2009090841 A1 WO2009090841 A1 WO 2009090841A1 JP 2008073435 W JP2008073435 W JP 2008073435W WO 2009090841 A1 WO2009090841 A1 WO 2009090841A1
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WO
WIPO (PCT)
Prior art keywords
axis direction
substrate
electrode
conductive member
movable electrode
Prior art date
Application number
PCT/JP2008/073435
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English (en)
Japanese (ja)
Inventor
Manabu Tamura
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Alps Electric Co., Ltd.
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Filing date
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Application filed by Alps Electric Co., Ltd. filed Critical Alps Electric Co., Ltd.
Publication of WO2009090841A1 publication Critical patent/WO2009090841A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Definitions

  • the present invention relates to a capacitance type acceleration sensor that detects acceleration using capacitance.
  • This capacitance type acceleration sensor is composed of a fixed electrode and a movable electrode (weight) that swings when G (acceleration) is applied, and detects a change in capacitance between the fixed electrode and the movable electrode. By doing so, the acceleration can be obtained.
  • a silicon substrate is processed to form a plurality of weight portions which are movable electrodes, and a capacitance for calculating a change in physical quantity corresponding to the acceleration received by these weight portions.
  • Type acceleration sensor Patent Document 1
  • a lead electrode for the fixed electrode and the movable electrode is provided on one main surface of the substrate, and the lead electrode and the fixed electrode or the movable electrode are moved by a conductive member penetrating the substrate.
  • a structure having an electrical connection with an electrode has been developed.
  • the conductive member for the fixed electrode and the conductive member for the movable electrode are provided to penetrate through the substrate, and parasitic capacitance is generated between the conductive members, resulting in poor sensitivity. Is assumed.
  • the present invention has been made in view of the above points, and provides a capacitive acceleration sensor capable of measuring acceleration with high sensitivity in a structure that can be surface-mounted using a conductive member that penetrates a substrate. With the goal.
  • the capacitive acceleration sensor of the present invention is a capacitive acceleration sensor that detects at least acceleration in the Z-axis direction from a change in capacitance between a movable electrode functioning as a weight and a fixed electrode.
  • a pair of detection electrode pairs for detecting at least one of the first substrate having electrodes and the movable electrode at a predetermined interval and detecting the capacitance as a capacitance difference is fixed electrode.
  • a conductive member for the movable electrode and the fixed electrode that is electrically connected to the movable electrode and the fixed electrode and penetrates the inside, and is joined to one main surface of the first substrate.
  • the movable power Conductive members use is characterized in that it is arranged substantially equidistant away from each conductive member for detecting electrode pair for the Z-axis direction.
  • the capacitance-type acceleration sensor of the present invention independently detects accelerations in the X-axis direction, the Y-axis direction, and the Z-axis direction from changes in capacitance between the movable electrode functioning as a weight and the fixed electrode.
  • a capacitance-type acceleration sensor wherein a first substrate having three movable electrodes and at least one of the first substrate is opposed to each movable electrode at a predetermined interval, and the capacitance is defined as a capacitance difference.
  • the movable electrode is a torsion beam with respect to the first substrate.
  • the movable electrode for the Z-axis direction is supported so as to be movable up and down by a bending beam with respect to the first substrate, and in the plan view, the conductive member for the movable electrode is It is characterized by being disposed at a position approximately equidistant from each conductive member for the detection electrode pair for the Z-axis direction.
  • the parasitic capacitance between the conductive member for the movable electrode and the conductive member for Z-axis detection, and the parasitic capacitance between the conductive member for the movable electrode and the conductive member for Z-axis reference are almost equal. Thereby, acceleration can be measured with high sensitivity.
  • the conductive member for the movable electrode is disposed at a position relatively distant from the conductive member for the X-axis direction and the Y-axis direction in plan view. Is preferred.
  • the capacitance type acceleration sensor detects at least the acceleration in the Z-axis direction from the change in capacitance between the movable electrode functioning as a weight and the fixed electrode.
  • a first substrate having a movable electrode, and at least one of the movable substrate is opposed to the movable electrode at a predetermined interval, and a pair of detection electrode pairs for detecting the capacitance as a capacitance difference is provided.
  • a second substrate having a plurality of conductive members electrically connected to the movable electrode and the fixed electrode and penetrating through the interior, and being joined to one main surface of the first substrate;
  • a third substrate bonded to the other main surface of the first substrate, and the movable electrode for the Z-axis direction is supported by the bending beam with respect to the first substrate so as to be movable up and down.
  • the conductive member for the movable electrode Since the Z-axis direction detection electrode pair is disposed at a position that is substantially equidistant from each detection electrode, in a structure that can be surface-mounted using a conductive member that penetrates the substrate, it is highly sensitive. Acceleration can be measured.
  • FIG. 2A is a cross-sectional view taken along line IIA-IIA in FIG. 1
  • FIG. 2B is a cross-sectional view taken along line IIB-IIB in FIG. It is a figure which shows the relationship between the capacitance difference and acceleration in a capacitive acceleration sensor.
  • A)-(d) is a figure for demonstrating the manufacturing method of the capacitance-type acceleration sensor based on this invention.
  • (A), (b) is a figure for demonstrating the manufacturing method of the electrostatic capacitance type acceleration sensor which concerns on this invention.
  • (A)-(c) is a figure for demonstrating the manufacturing method of the capacitance-type acceleration sensor based on this invention.
  • (A)-(c) is a figure which shows arrangement
  • FIG. 1 is a plan view showing a capacitive acceleration sensor according to an embodiment of the present invention.
  • 2A is a cross-sectional view taken along line IIA-IIA in FIG. 1
  • FIG. 2B is a cross-sectional view taken along line IIB-IIB in FIG.
  • the capacitive acceleration sensor shown in FIG. 1 includes first and second weight portions 12a, 12b, and 12c that are three movable electrodes for independently detecting accelerations in the X-axis direction, the Y-axis direction, and the Z-axis direction.
  • a pair of detection electrodes each having a predetermined distance from one main surface of the silicon substrate 11 as a single substrate and the respective weight portions 12a, 12b, 12c and detecting a change in capacitance as a capacitance difference.
  • the glass substrate 13 which is the second substrate having the pairs 14a, 14b, 14c, 14d, 14e, and 14f is joined, and weight portions 12a and 12b are formed on the other main surface of the silicon substrate 11.
  • a glass substrate 15 that is a third substrate is bonded so as to constitute a region (cavity) 18 that is swung to raise and lower the weight portion 12c.
  • the movable electrode sensitive to acceleration in the Y-axis direction is the weight portion 12a
  • the movable electrode sensitive to acceleration in the X-axis direction is the weight portion 12b
  • Z The movable electrode sensitive to the acceleration in the axial direction is the weight portion 12c.
  • the pair of detection electrode pairs for the Y-axis direction weight portion 12a are fixed electrodes 14a and 14b
  • the pair of detection electrode pairs for the X-axis direction weight portion 12b are fixed electrodes 14c and 14d, which are for the Z-axis direction.
  • a pair of detection electrodes for the weight portion 12c are fixed electrodes 14e and 14f.
  • Conductive members (penetrating electrodes) 16a and 16b are electrically connected to the fixed electrodes 14a and 14b for the Y-axis direction weight portion 12a, respectively.
  • the fixed electrodes 14c and 14d for the X-axis direction weight portion 12b are connected to the fixed electrodes 14a and 14b, respectively.
  • the conductive members (penetrating electrodes) 16c and 16d are electrically connected to each other, and the conductive members (penetrating electrodes) 16e and 16f are electrically connected to the fixed electrodes 14e and 14f with respect to the Z-axis direction weight portion 12c, respectively. It is connected.
  • the Y-axis direction weight portion 12a has a substantially rectangular shape in plan view, and is supported so as to be swingable with respect to the silicon substrate 11 by a torsion beam 11a on opposite sides.
  • the X-axis direction weight portion 12b has a substantially rectangular shape in plan view, and is supported so as to be swingable with respect to the silicon substrate 11 by a torsion beam 11b on opposite sides.
  • Each torsion beam 11a, 11b is provided in the vicinity of the center of the opposite sides of the weight portions 12a, 12b in plan view.
  • the Z-axis direction weight portion 12c has a substantially rectangular shape in plan view, and the periphery thereof is supported by the bending beam 11c so as to be movable up and down with respect to the silicon substrate 11.
  • the fixed electrodes 14a and 14b with respect to the Y-axis direction weight part 12a have substantially the same area, and as can be seen from FIG. 1, in the plan view, below the Y-axis direction weight part 12a and torsion beams 11a. Is formed by dividing the central portion passing through the boundary (upper and lower divisions in FIG. 1). The total area of the two fixed electrodes 14a and 14b is made substantially equal to the area of the weight portion 12a for the Y-axis direction.
  • the fixed electrodes 14c and 14d with respect to the X-axis direction weight portion 12b have substantially the same area, and as can be seen from FIG. 1, in the plan view, below the X-axis direction weight portion 12b, Is formed by dividing the central portion passing through the boundary (left and right division in FIG. 1). The areas of the two fixed electrodes 14c and 14d are combined to be approximately equal to the area of the weight portion 12b for the X-axis direction.
  • the fixed electrodes 14e and 14f for the Z-axis direction weight portion 12c have substantially the same area as the Z-axis direction weight portion 12c, and one fixed electrode 14e is formed below the Z-axis direction weight portion 12c.
  • the other fixed electrode 14f is formed in another region.
  • the detection electrodes fixed electrodes
  • the weight parts 12a, 12b, 12c for the respective axial directions are arranged in parallel on the silicon substrate 11 and are formed so as to have substantially the same shape, thereby simplifying the manufacturing process. This is preferable.
  • the glass substrates 13 are arranged in a substantially square shape in plan view.
  • the fixed electrode is disposed because the region where the electrode is formed on the glass substrate 13 becomes uniform and the influence on the thermal stress becomes equal.
  • FIG. 2A is a cross-sectional view taken along the line IIA-IIA in FIG. 1, and shows the configuration of the Y-axis direction weight portion 12a and the X-axis direction weight portion 12b.
  • FIG. It is sectional drawing which follows the IIB-IIB line
  • fixed electrodes 14a, 14b, 14c, and 14d are formed on one main surface of the glass substrate 13. In FIG. In FIG. 2A, the fixed electrodes 14c and 14d for the X-axis direction weight portion 12b are shown, and the fixed electrodes 14a and 14b for the Y-axis direction weight portion 12a are not shown.
  • the glass substrate 13 is provided with conductive members 16c and 16d penetrating so as to be exposed at both main surfaces, and one of the exposed surfaces is electrically connected to the fixed electrodes 14c and 14d, respectively.
  • Lead electrodes 17a and 17b are formed on the other exposed surfaces of the conductive members 16c and 16d, and the conductive members 16a and 16b and the lead electrodes 17a and 17b are electrically connected to each other.
  • the fixed members 14a and 14b for the Y-axis direction weight portion 12a are also provided with conductive members and lead electrodes in the same configuration.
  • a silicon substrate 11 is bonded on the glass substrate 13.
  • an SOI (Silicon-On-Insulator) substrate is used as a silicon substrate in order to facilitate the formation of the beam portion.
  • a glass substrate 15 is bonded on the silicon substrate 11. Accordingly, the cavity 18a in which the Y-axis direction weight portion 12a and the corresponding fixed electrodes 14a and 14b are disposed, and the cavity in which the X-axis direction weight portion 12b and the corresponding fixed electrodes 14c and 14d are disposed. 18b are formed.
  • anodic bonding is used for bonding between the glass substrate 13 and the silicon substrate 11 or between the glass substrate 15 and the silicon substrate 11 in order to increase the airtightness of the cavities 18a and 18b formed between the substrates. Preferably it is done.
  • the active layer 11f of the SOI substrate becomes a torsion beam 11a, and supports the Y-axis direction weight portion 12a so as to be swingable.
  • the active layer 11f of the SOI substrate is twisted 11b and supports the X-axis direction weight portion 12b so as to be swingable.
  • fixed electrodes 14e and 14f are formed on one main surface of the glass substrate 13.
  • the glass substrate 13 is provided with conductive members 16e, 16f, and 16g penetrating so as to be exposed at both main surfaces, and one of the exposed surfaces is electrically connected to the fixed electrodes 14e, 14f and the electrode 19, respectively.
  • lead electrodes 17c, 17d, and 17e are formed on the other exposed surfaces of the conductive members 16e, 16f, and 16g, and the conductive members 16e, 16f, and 16g and the lead electrodes 17c, 17d, and 17e are electrically connected to each other. It is connected.
  • the conductive member 16g is a common conductive member for the weight portions 12a, 12b, and 12c that are movable electrodes.
  • a silicon substrate 11 is bonded on the glass substrate 13, and a glass substrate 15 is bonded on the silicon substrate 11.
  • a cavity 18c in which the Z-axis direction weight portion 12c and the corresponding fixed electrode 14e are arranged, and a cavity in which the Z-axis direction weight portion 12c fixed electrode 14f is arranged are formed.
  • one of the detection electrodes for the Z-axis direction is sealed in an independent cavity different from the cavities of the movable electrodes in the X-axis, Y-axis, and Z-axis directions.
  • anodic bonding is performed between the glass substrate 13 and the silicon substrate 11 or between the glass substrate 15 and the silicon substrate 11 in order to increase the airtightness of the cavity 18c formed between the substrates. Is preferred.
  • the active layer 11f of the SOI substrate becomes a bending beam 11c, and supports the Z-axis direction weight portion 12c so as to be movable up and down.
  • the torsion beams 11a and 11b and the bending beam 11c are formed on the bottom surfaces of the weight portions 12a, 12b, and 12c. That is, each of the weight portions 12a, 12b, and 12c has a pair of faces that face each other in the thickness direction of the silicon substrate 11, and the torsion beams 11a and 11b and the bending beam 11c are respectively connected to the weight portions 12a and 12b. , 12c is formed along one surface. As can be seen from FIG. 1, the torsion beams 11a and 11b and the bending beam 11c pass through the positions of the centers of gravity of the weight portions 12a, 12b and 12c, respectively. By forming such a beam, the sensitivity of the other axes can be lowered, and the acceleration in the direction of each axis can be detected independently.
  • the conductive member 16g for the movable electrode is located at an approximately equal distance from the respective conductive members 16e and 16f for the detection electrode pair for the Z-axis direction. Is arranged.
  • the movable electrode conductive member 16g has a parasitic capacitance with each of the conductive members 16e and 16f for the detection electrode pair for the Z-axis direction. Since the parasitic capacitance changes in size according to the distance, if the distance between the conductive member 16e and the conductive member 16g is substantially equal to the distance between the conductive member 16f and the conductive member 16g.
  • the parasitic capacitance between the conductive member 16g and the conductive member 16e is substantially equal to the parasitic capacitance between the conductive member 16g and the conductive member 16f.
  • the acceleration in the Z-axis direction detects a change in capacitance due to a change in distance to the fixed electrode 14e due to the lifting and lowering of the weight portion 12c as a capacitance difference from the reference electrode 14f. If there is a difference between the parasitic capacitance between the conductive member 16g and the conductive member 16e and the parasitic capacitance between the conductive member 16g and the conductive member 16f, as shown by the characteristic line A shown in FIG. The absolute value of increases. In this case, the sensitivity S ′ of the capacitive acceleration sensor is (C 1 ′ ⁇ C 0 ′) / C 0 ′.
  • the differential capacitance is as shown by the characteristic line B in FIG.
  • the absolute value is small.
  • the sensitivity S of the capacitive acceleration sensor is (C 1 -C 0 ) / C 0 .
  • the sensitivity S is larger than the sensitivity S ′ when there is a difference between the two parasitic capacitances because the absolute value of the difference capacitance is small because there is no difference between the two parasitic capacitances.
  • the conductive member 16g for the movable electrode is disposed at a position approximately equidistant from the respective conductive members 16e and 16f for the detection electrode pair for the Z-axis direction, so that the substrate is In a structure that can be surface-mounted using a penetrating conductive member, acceleration can be measured with high sensitivity.
  • the conductive member 16g for the movable electrode is disposed at a position relatively distant from the conductive members 16a to 16d for the X-axis direction and the Y-axis direction in plan view. It is preferable that As described above, since the parasitic capacitance between the conductive members changes depending on the distance, the conductive member 16g for the movable electrode is relative to the conductive members 16a to 16d for the X-axis direction and the Y-axis direction. Therefore, the absolute value error of the differential capacitance due to the parasitic capacitance in the X-axis direction and Y-axis direction acceleration detection units can be reduced. Thereby, acceleration can be measured with higher sensitivity.
  • the X-axis direction weight portion 12b swings about the torsion beam 11b as a fulcrum. As the weight 12b swings and displaces in this way, the distance between the opposed fixed electrodes 14c and 14d changes, and a change in capacitance due to the change in the distance can be detected as a capacitance difference. The acceleration can be measured by the capacitance change. Further, when acceleration in the Y-axis direction is applied, the Y-axis direction weight portion 12a swings with the torsion beam 11a as a fulcrum.
  • the distance between the opposed fixed electrodes 14a and 14b changes, and a change in capacitance due to the change in the distance can be detected as a capacitance difference.
  • the acceleration can be measured by the capacitance change.
  • the Z-axis direction weight portion 12c moves up and down by the bending beam 11c.
  • the distance between the opposed fixed electrodes 14e changes, and a change in capacitance due to the change in the distance is detected as a difference in capacitance from the reference electrode 14f.
  • the acceleration can be measured by the change in capacitance.
  • FIGS. 5 (a) and 5 (b), and FIGS. 6 (a) to 6 (c) are diagrams for explaining a method of manufacturing a capacitive acceleration sensor according to the present invention. It is.
  • protrusions to be conductive members 16e, 16f, and 16g are formed on one main surface of the silicon substrate 16 by photolithography and dry etching.
  • the glass substrate 13 is placed on the protruding portion of the silicon substrate 16 and, as shown in FIG. 4B, both substrates are bonded so that the protruding portion is embedded in the glass substrate 13 by pressing while heating.
  • complex are grind
  • 4 shows the configuration corresponding to FIG. 2B, the configuration corresponding to FIG. 2A is also formed at the same time. That is, conductive members for the fixed electrodes 14a, 14b, 14c, and 14d corresponding to the X-axis direction weight portion 12b and the Y-axis direction weight portion 12a are formed in the same manner.
  • an electrode material is deposited on the exposed conductive members 16e, 16f, and 16g by sputtering, and fixed electrodes 14e and 14f and an electrode 19 are formed by photolithography and etching, respectively.
  • the conductive member for each axis is formed so that the conductive member 16g for the movable electrode is separated from the respective conductive members 16e and 16f for the detection electrode pair for the Z-axis direction by substantially equal distances in plan view.
  • the movable electrode conductive member 16g is formed at a position relatively far from the X-axis direction and Y-axis direction conductive members 16a to 16d.
  • the active layer 11f and the base layer 11e of the SOI substrate (silicon substrate 11) having the active layer 11f, the insulating layer 11d, and the base layer 11e are respectively formed into the recesses 11h by photolithography and etching. , 11g.
  • the thickness of the active layer 11f of the SOI substrate corresponds to the thickness of the beam.
  • the bending beam 11c is formed by photolithography and etching the active layer 11f.
  • 5 shows the configuration corresponding to FIG. 2B, the configuration corresponding to FIG. 2A is also formed at the same time. That is, the torsion beams 11a and 11b and the recess 11g corresponding to the X-axis direction weight portion 12b and the Y-axis direction weight portion 12a are formed in the same manner.
  • the silicon substrate shown in FIG. 5B is formed so that the active layer 11f of the SOI substrate covers the fixed electrode of the glass substrate 13 having the structure shown in FIG. 4D. 11 are laminated, and both substrates 11 and 13 are bonded. At this time, it is preferable to perform bonding by anodic bonding.
  • the base layer of the SOI substrate and predetermined portions of the insulating layer 11d are removed by photolithography and etching to form the Z-axis direction weight portion 12c.
  • a glass substrate 15 is bonded onto the base layer 11e of the SOI substrate. At this time, it is preferable to perform bonding by anodic bonding.
  • electrode materials are deposited on the conductive members 16e, 16f, and 16g exposed on the main surface of the glass substrate 13, and lead electrodes 17c, 17d, and 17e are formed by photolithography and etching, respectively.
  • the capacitive acceleration sensor thus obtained can independently detect accelerations in the X-axis direction, the Y-axis direction, and the Z-axis direction.
  • the conductive member 16g for the movable electrode is separated from each of the conductive members 16e and 16f for the detection electrode pair for the Z-axis direction by a substantially equal distance in plan view.
  • the movable electrode conductive member 16g is formed at a position relatively distant from the X-axis direction and Y-axis direction conductive members 16a to 16d, so that the conductive member 16g is formed between the conductive member 16g and the conductive member 16e.
  • the parasitic capacitance between the conductive member 16g and the conductive member 16f are substantially equal. Thereby, acceleration can be measured with high sensitivity.
  • the parasitic capacitance between the conductive members in the plan view arrangement shown in FIGS. 7A to 7C was calculated. The results are shown in Table 1 below.
  • the parasitic capacitance calculated the capacity
  • the movable electrode conductive member 24 is disposed between the X-axis direction sensor 21 and the Y-axis direction sensor 22 and is used for Z-axis detection.
  • the conductive member 23a and the Z-axis reference conductive member 23b are arranged at an approximately equal distance.
  • the movable electrode conductive member 24 is disposed between the Z-axis detecting conductive member 23a and the Z-axis reference conductive member 23b.
  • the Z-axis detection conductive member 23a and the Z-axis reference conductive member 23b are arranged at substantially the same distance. In the configuration shown in FIG.
  • the movable electrode conductive member 24 is positioned relatively far from the X-axis direction sensor 21 (conductive member) and the Y-axis direction sensor 22 (conductive member). Has been placed. Further, as a reference example, the configuration shown in FIG. 7C, that is, the movable electrode conductive member 24 is disposed at the end of the substrate, and the Z-axis detection conductive member 23a and the Z-axis reference conductive member 23b are provided. Parasitic capacitance was also calculated for the components arranged at different distances.
  • Table 1 shows the parasitic capacitance between the conductive member 24 for the movable electrode and the conductive member of each axis. Since this capacitance type acceleration sensor detects the acceleration using the capacitance difference between p and n, the capacitance difference between the conductive members that do not contribute to the detection unit is preferably as small as possible. As can be seen from Table 1, in the case of the reference example, the difference is about 41 fF at maximum, but it is reduced to 13 fF in Example 1 and to 32.8 fF in Example 2. Thus, the capacitive acceleration sensor according to the present invention can detect acceleration with high sensitivity.
  • the present invention is not limited to the above embodiment, and can be implemented with various modifications.
  • a substrate other than a glass substrate or a silicon substrate may be used in the present invention.
  • the thickness and material of the electrode and each layer in the sensor can be set as appropriate without departing from the effects of the present invention.
  • the process described in the above embodiment is not limited to this, and the process may be performed by changing the order as appropriate.
  • the gap is formed on the side of the SOI substrate 11 that is the opposite surface, the gap may be formed by etching the glass substrate 13.
  • Other modifications may be made as appropriate without departing from the scope of the object of the present invention.

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Abstract

L'invention concerne un capteur d'accélération à capacité électrostatique, qui peut être monté en surface à l'aide d'un élément conducteur qui s'étend dans un substrat et qui mesure une accélération avec une grande sensibilité. Le capteur d'accélération est constitué en joignant une face principale d'un substrat en silicium (11) qui sert de premier substrat, qui comprend des parties de poids (12a, 12b et 12c) qui sont trois électrodes mobiles destinées à détecter les accélérations dans la direction de l'axe X, dans la direction de l'axe Y et dans la direction de l'axe Z indépendamment les unes des autres, à un substrat en verre (13) qui sert de second substrat, qui comprend des paires d'électrodes de détection individuelles (14a, 14b, 14c, 14d, 14e et 14f) qui possèdent des espaces prédéterminés par rapport aux parties de poids individuelles (12a, 12b et 12c). Dans les éléments conducteurs destinés aux axes individuels, sur une vue de dessus, un élément conducteur (16g) destiné à une électrode mobile est formé à équidistance des éléments conducteurs individuels (16e et 16f) pour la paire d'électrodes de détection dans la direction de l'axe Z, et l'élément conducteur (16g) destiné à une électrode mobile est formé à une distance relative des éléments conducteurs (16a à 16d) dans la direction de l'axe X et la direction de l'axe Y.
PCT/JP2008/073435 2008-01-15 2008-12-24 Capteur d'accélération à capacité électrostatique WO2009090841A1 (fr)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014057623A1 (fr) * 2012-10-12 2014-04-17 パナソニック株式会社 Capteur d'accélération
JP2014077742A (ja) * 2012-10-12 2014-05-01 Panasonic Corp 加速度センサ
JP2014238280A (ja) * 2013-06-06 2014-12-18 パナソニックＩｐマネジメント株式会社 加速度センサ
WO2015008422A1 (fr) * 2013-07-19 2015-01-22 パナソニックＩｐマネジメント株式会社 Capteur

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Publication number Priority date Publication date Assignee Title
JP2000081448A (ja) * 1998-06-29 2000-03-21 Zexel Corp 移動体基礎情報検出方法及び移動体基礎情報用マルチセンサ
JP2005249454A (ja) * 2004-03-02 2005-09-15 Mitsubishi Electric Corp 容量型加速度センサ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000081448A (ja) * 1998-06-29 2000-03-21 Zexel Corp 移動体基礎情報検出方法及び移動体基礎情報用マルチセンサ
JP2005249454A (ja) * 2004-03-02 2005-09-15 Mitsubishi Electric Corp 容量型加速度センサ

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014057623A1 (fr) * 2012-10-12 2014-04-17 パナソニック株式会社 Capteur d'accélération
JP2014077742A (ja) * 2012-10-12 2014-05-01 Panasonic Corp 加速度センサ
EP2908141A4 (fr) * 2012-10-12 2015-08-19 Panasonic Ip Man Co Ltd Capteur d'accélération
JP2014238280A (ja) * 2013-06-06 2014-12-18 パナソニックＩｐマネジメント株式会社 加速度センサ
WO2015008422A1 (fr) * 2013-07-19 2015-01-22 パナソニックＩｐマネジメント株式会社 Capteur
JPWO2015008422A1 (ja) * 2013-07-19 2017-03-02 パナソニックＩｐマネジメント株式会社 センサ

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