WO2009084435A1 - Capteur magnétique et module de capteur magnétique - Google Patents

Capteur magnétique et module de capteur magnétique Download PDF

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Publication number
WO2009084435A1
WO2009084435A1 PCT/JP2008/072921 JP2008072921W WO2009084435A1 WO 2009084435 A1 WO2009084435 A1 WO 2009084435A1 JP 2008072921 W JP2008072921 W JP 2008072921W WO 2009084435 A1 WO2009084435 A1 WO 2009084435A1
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WIPO (PCT)
Prior art keywords
layer
magnetic
magnetic field
permanent magnet
magnetic sensor
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PCT/JP2008/072921
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English (en)
Japanese (ja)
Inventor
Hiromitsu Sasaki
Hirofumi Fukui
Takashi Hatanai
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Alps Electric Co., Ltd.
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Application filed by Alps Electric Co., Ltd. filed Critical Alps Electric Co., Ltd.
Priority to JP2009547997A priority Critical patent/JP5066581B2/ja
Publication of WO2009084435A1 publication Critical patent/WO2009084435A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Definitions

  • the present invention relates to a magnetic sensor using a magnetoresistive effect element used as a geomagnetic sensor, for example.
  • a magnetic sensor using a magnetoresistive effect element can be used as a geomagnetic sensor for detecting geomagnetism incorporated in a mobile device such as a mobile phone.
  • the magnetoresistive element varies in electric resistance value with respect to the strength of the magnetic field from the sensitivity axis direction.
  • the geomagnetic sensor needs to detect magnetism by splitting it into two or three axes, so the magnetic sensor that detects the strength of the magnetic field of each axis is not sensitive to the other axes. There is a need to. Further, in order to accurately detect the magnetic field strength, a sensor having a linear output with respect to the magnetic field strength is required.
  • Patent Document 1 a plurality of strip-like magnetoresistive films are arranged in parallel to each other, and end portions of each magnetoresistive element are connected by a permanent magnet film to form a zigzag folded shape.
  • a sensor is disclosed.
  • Patent Document 1 does not recognize the conventional problem with respect to the above-described geomagnetic sensor, and naturally does not show means for solving it. JP 2005-183614 A
  • the present invention is to solve the above-described conventional problems, and in particular, can improve the magnetic shielding effect in the direction orthogonal to the sensitivity axis and obtain a stable magnetic sensitivity in the sensitivity axis direction. It is an object of the present invention to provide a magnetic sensor and a magnetic sensor module capable of performing the above.
  • the present invention is a magnetic sensor comprising a magnetoresistive effect element,
  • the magnetoresistive element has a pinned magnetic layer whose magnetization direction is fixed, and a free magnetic layer whose magnetization direction is changed by receiving an external magnetic field laminated on the pinned magnetic layer via a nonmagnetic layer,
  • An element portion oriented in an element width direction in which the fixed magnetization direction of the fixed magnetic layer is a sensitivity axis direction;
  • the element portion and an intermediate permanent magnet layer in an element length direction orthogonal to the element width direction are provided, and an element coupling body is constituted by the element portion and the intermediate permanent magnet layer, and the element coupling body
  • the element length is longer than the element width
  • a soft magnetic body is disposed in non-contact with the element coupling body,
  • the length dimension of the soft magnetic body in the same direction as the element length direction is longer than the element length of the element coupling body, and the soft magnetic body extends from both sides of the element coupling body in the element length direction. It has an
  • the above configuration can improve the magnetic shield effect in the direction perpendicular to the sensitivity axis, and can obtain a stable magnetic sensitivity in the sensitivity axis direction.
  • the element portion, the outer permanent magnet layer, and the intermediate permanent magnet layer in the element coupling body are all electrically connected, and a plurality of element coupling bodies are arranged at intervals in the element width direction.
  • the outer permanent magnet layers provided on both sides of each element unit coupling body are formed in a meander shape electrically connected by a nonmagnetic connection layer, It is preferable that the soft magnetic body is formed in non-contact with each element portion on either side of the element width direction in the element width direction, directly above, or directly below.
  • the meander shape the element resistance can be increased and the power consumption can be reduced. Further, by arranging a soft magnetic material for each element portion, the magnetic shield effect in the direction orthogonal to the sensitivity axis can be improved more appropriately.
  • the nonmagnetic connection layer has an intersecting portion intersecting the soft magnetic material with an insulating film interposed therebetween.
  • the size can be reduced in a plane, and the parasitic resistance due to the wiring length can be reduced.
  • the length of the outer permanent magnetic layer in the element length direction is longer than the length of the intermediate permanent magnetic layer in the element length direction.
  • the intermediate permanent magnetic layer and the outer permanent magnetic layer are formed wider than the element width.
  • the intermediate permanent magnet layer is provided in a recess formed in the film thickness direction of the element portion.
  • the outer permanent magnetic layer is electrically connected through a recess formed in the film thickness direction of the element portion.
  • a nonmagnetic low resistance layer having a resistance value smaller than that of the permanent magnet layer is formed on the upper surface of the intermediate permanent magnet layer and the upper surface of the outer permanent magnet layer.
  • each of the intermediate permanent magnet layer and the outer permanent magnet layer may be formed through an insulating film with respect to the element portion, or may be formed in a form in which it is directly electrically joined. In view of the characteristics and bias magnetic field application characteristics, it is preferable to form the electrode portion directly in electrical contact with the element portion.
  • a magnetic sensor module according to the present invention includes a plurality of the magnetic sensors according to any one of the above, and each magnetoresistive element is configured so that sensitivity axes of at least one pair of the magnetoresistive elements are orthogonal to each other. Is arranged.
  • the magnetic sensor module of the present invention can be used as a geomagnetic sensor.
  • the magnetic sensor of the present invention it is possible to improve the magnetic shield effect in the direction orthogonal to the sensitivity axis and to obtain a stable magnetic sensitivity with respect to the magnetic field from the sensitivity axis direction.
  • FIG. 1A is a plan view showing a portion of the magnetoresistive element of the magnetic sensor according to the first embodiment
  • FIG. 1B is a height direction along the line AA in FIG.
  • FIG. 2 is a plan view showing a part of the magnetoresistive element of the magnetic sensor in the second embodiment
  • FIG. 3 is a DD shown in FIG.
  • FIG. 4 is a partially enlarged cross-sectional view taken along the line in the height direction (Z direction in the drawing) and viewed from the arrow direction
  • FIG. FIG. 6 is a diagram for explaining the relationship between the fixed magnetization direction of the pinned magnetic layer and the magnetization direction of the free magnetic layer of the magnetoresistive effect element, and the electric resistance value
  • FIG. 6 shows the magnetoresistive effect element cut from the film thickness direction.
  • FIG. 7 is a circuit diagram of the magnetic sensor of the present embodiment. That.
  • the magnetic sensor module using the magnetic sensor 1 provided with the magnetoresistive effect element according to the present embodiment is used as a geomagnetic sensor mounted on a mobile device such as a mobile phone.
  • the geomagnetic sensor 1 includes a sensor unit 6 in which magnetoresistive effect elements 2 and 3 and fixed resistance elements 4 and 5 are bridge-connected, and an input terminal electrically connected to the sensor unit 6. 7, an integrated circuit (IC) 11 having a ground terminal 8, a differential amplifier 9, an external output terminal 10, and the like.
  • IC integrated circuit
  • an element coupling body 61 extending in a strip shape in the X direction is configured by the element portion 12 and the intermediate permanent magnet layer 60.
  • the element length L1 of the element coupling body 61 is formed longer than the element width W1.
  • Outer permanent magnet layers 65 are provided on both sides in the X direction of the element coupling body 61 in the drawing.
  • a plurality of the element coupling bodies 61 are arranged in parallel at intervals in the element width direction (Y direction), and the outer permanent magnet layers 65 provided at both ends of each element coupling body 61 are connected by electrode layers 62.
  • meander-shaped magnetoresistive elements 2 and 3 are configured.
  • the electrode layer 62 connected to the input terminal 7, the ground terminal 8, and the output extraction part 14 is connected to one side of the element coupling body 61 in the both ends formed in the meander shape.
  • the electrode layer 62 has a lower resistance than the permanent magnet layers 60 and 65 and is made of a nonmagnetic conductive material such as Al, Ta, or Au.
  • FIG. 6 shows a cut surface cut in the film thickness direction from the direction parallel to the element width W1.
  • the element portion 12 is formed by laminating, for example, an antiferromagnetic layer 33, a pinned magnetic layer 34, a nonmagnetic layer 35, and a free magnetic layer 36 in this order from the bottom, and the surface of the free magnetic layer 36 is a protective layer 37. Covered.
  • the element unit 12 is formed by sputtering, for example.
  • the antiferromagnetic layer 33 is made of an antiferromagnetic material such as an Ir—Mn alloy (iridium-manganese alloy).
  • the pinned magnetic layer 34 is made of a soft magnetic material such as a Co—Fe alloy (cobalt-iron alloy).
  • the nonmagnetic layer 35 is made of Cu (copper) or the like.
  • the free magnetic layer 36 is formed of a soft magnetic material such as a Ni—Fe alloy (nickel-iron alloy).
  • the protective layer 37 is made of Ta (tantalum) or the like.
  • the nonmagnetic layer 35 is a giant magnetoresistive effect element (GMR element) formed of a nonmagnetic conductive material such as Cu, but a tunnel type magnetoresistive effect element formed of an insulating material such as Al 2 O 3. (TMR element) may be used.
  • GMR element giant magnetoresistive effect element
  • TMR element tunnel type magnetoresistive effect element formed of an insulating material such as Al 2 O 3.
  • the stacked configuration of the element unit 12 illustrated in FIG. 6 is an example, and another stacked configuration may be used.
  • the free magnetic layer 36, the nonmagnetic layer 35, the pinned magnetic layer 34, the antiferromagnetic layer 33, and the protective layer 37 may be stacked in this order from the bottom.
  • the magnetization direction of the pinned magnetic layer 34 is fixed by antiferromagnetic coupling between the antiferromagnetic layer 33 and the pinned magnetic layer 34.
  • the pinned magnetization direction (P direction) of the pinned magnetic layer 34 faces the element width direction (Y direction). That is, the fixed magnetization direction (P direction) of the fixed magnetic layer 34 is orthogonal to the longitudinal direction of the element coupling body 61.
  • the magnetization direction (F direction) of the free magnetic layer 36 varies depending on the external magnetic field.
  • a bias magnetic field acts on the element portion 12 from the permanent magnet layers 60 and 65 from the X direction in the figure. Therefore, the magnetization of the free magnetic layer 36 constituting the element unit 12 is directed in the X direction in the figure in the absence of a magnetic field.
  • the external magnetic field Y1 acts from the same direction as the fixed magnetization direction (P direction) of the fixed magnetic layer 34, and the magnetization direction (F direction) of the free magnetic layer 36 faces the external magnetic field Y1 direction. Then, the fixed magnetization direction (P direction) of the fixed magnetic layer 34 and the magnetization direction (F direction) of the free magnetic layer 36 approach each other, and the electric resistance value decreases.
  • the external magnetic field Y2 acts from the direction opposite to the fixed magnetization direction (P direction) of the fixed magnetic layer 34, and the magnetization direction (F direction) of the free magnetic layer 36 changes to the external magnetic field Y2 direction.
  • the fixed magnetization direction (P direction) of the fixed magnetic layer 34 and the magnetization direction (F direction) of the free magnetic layer 36 approach antiparallel, and the electrical resistance value increases.
  • the magnetoresistive elements 2 and 3 are formed on a substrate 16.
  • the magnetoresistive elements 2 and 3 are covered with an insulating layer 17 such as Al 2 O 3 or SiO 2 .
  • the space between the element coupling bodies 61 constituting the magnetoresistive effect elements 2 and 3 is also filled with the insulating layer 17.
  • the insulating layer 17 is formed by sputtering, for example.
  • the upper surface of the insulating layer 17 is formed as a flat surface by using, for example, a CMP technique.
  • the upper surface of the insulating layer 17 may be formed as an uneven surface following the step between the element coupling body 61 and the substrate 16.
  • a soft magnetic body 18 is provided between the element coupling bodies 61 constituting the magnetoresistive effect elements 2 and 3 and outside the element coupling body 61 located on the outermost side.
  • the soft magnetic material 18 is formed into a thin film by sputtering or plating, for example.
  • the soft magnetic body 18 is made of NiFe, CoFe, CoFeSiB, CoZrNb, or the like.
  • the length L2 of the soft magnetic body 18 is longer than the element length L1 of the element coupling body 61.
  • the soft magnetic body 18 has a longitudinal direction ( An extending portion 18a extending in the longitudinal direction from both sides in the (X direction) is provided.
  • the soft magnetic body 18 is formed on the insulating layer 17 between the element portions 12. Although not shown, the soft magnetic body 18 and the space between the soft magnetic bodies 18 are covered with an insulating protective layer.
  • the element width W1 of the element portion 12 constituting the magnetoresistive effect elements 2 and 3 is in the range of 2 to 10 ⁇ m (see FIG. 1A).
  • the element length L5 of the element unit 12 is in the range of 1 to 10 ⁇ m (see FIG. 1A).
  • the film thickness T2 of the element portion 12 is in the range of 200 to 400 mm (see FIG. 1B).
  • the element section 12 has an aspect ratio (element length L5 / element width W1) of 0.1 to 4.
  • the length L3 of the intermediate permanent magnet layer 60 is in the range of 0.5 to 5 ⁇ m (see FIG. 1 (a)).
  • the width W3 of the intermediate permanent magnet layer 13 is in the range of 3 to 12 ⁇ m (see FIG. 1 (a)). W3 is preferably wider than W1.
  • the film thickness of the intermediate permanent magnet layer 13 is in the range of 150 to 1000 mm.
  • the length L4 of the outer permanent magnet layer 65 is in the range of 5 to 10 ⁇ m (see FIG. 1 (a)).
  • the film thickness of the outer permanent magnet layer 15 is preferably equal to the film thickness of the intermediate permanent magnet layer 13.
  • the distance T5 in the element width direction between the element coupling bodies 61 is in the range of 2 to 10 ⁇ m (see FIG. 1A).
  • the length dimension L1 of the element coupling body 61 is in the range of 50 to 200 ⁇ m.
  • the width dimension W2 of the soft magnetic body 18 is in the range of 1 to 6 ⁇ m when used as a geomagnetic sensor (see FIG. 1A).
  • the length L2 of the soft magnetic body 18 is in the range of 80 to 200 ⁇ m (see FIG. 1A).
  • the film thickness T3 of the soft magnetic body 18 is in the range of 0.2 to 1 ⁇ m (see FIG. 1B).
  • a length dimension T8 of the extending portion 18a of the soft magnetic body 18 is 10 ⁇ m or more (see FIG. 1A).
  • the distance T1 between the soft magnetic bodies 18 is 2 to 8 ⁇ m, which is equal to or larger than the width dimension W2 of the soft magnetic body 18 (see FIG. 1B).
  • the distance T4 in the Y direction between the soft magnetic body 18 located adjacent to the element portion 12 is 0 ⁇ T4 ⁇ 3 ⁇ m (see FIG. 1B).
  • a distance T5 in the height direction (Z direction) between the soft magnetic body 18 and the element portion 12 is 0.1 to 1 ⁇ m (see FIG. 1B).
  • the magnetic sensor 1 shown in FIG. 1 is for detecting geomagnetism from a direction parallel to the Y direction (element width direction) shown in the figure. Therefore, the Y direction in the figure is the sensitivity axis direction, and the X direction (element length direction) orthogonal to the Y direction in the figure is the longitudinal direction of the element coupling body 61.
  • the fixed magnetization direction (P direction) of the fixed magnetic layer 34 is directed to the Y direction in the figure, which is the sensitivity axis direction.
  • the element part 12 and the non-contact soft magnetic body 18 are provided.
  • the soft magnetic body 18 has an elongated shape in the element length direction (X direction in the drawing), like the element coupling body 61.
  • the magnetic permeability of the soft magnetic body 18 is larger than the magnetic permeability of the element portion 12.
  • the soft magnetic body 18 extends in the element length direction from both sides in the element length direction (X direction) of each element coupling body 61 constituting the magnetoresistive effect elements 2 and 3.
  • a protruding portion 18a is provided.
  • the element coupling body 61 is constituted by the element portion 12 and the intermediate permanent magnet layer 60.
  • Comparative Example 1 has a soft magnetic body 18.
  • the comparative example 2 has the permanent magnet layers 60 and 65.
  • FIG. 9A shows the intensity H of the magnetic field from the sensitivity axis direction (hereinafter referred to as sensitivity magnetic field) in the structure of Comparative Example 1 described above and the resistance change rate (MR ratio) per unit magnetic field of the magnetoresistive effect element.
  • FIG. 9B is a graph showing the relationship. The intensity H of the magnetic field from the direction orthogonal to the sensitivity axis direction in the structure of Comparative Example 1 (hereinafter referred to as the orthogonal magnetic field) and the unit magnetic field of the magnetoresistive element. It is a graph which shows the relationship with the resistance change rate (MR ratio) per hit.
  • the disturbance magnetic field generated inside the portable device is actually larger than the detected magnetic field, and the value is constant.
  • the linearity does not collapse when a magnetic field from the direction perpendicular to the sensitivity is applied, as well as the wide linearity of “the magnetic field actually detected + the magnetic field generated in the portable device”. Is required.
  • the resistance change in the direction perpendicular to the sensitivity is required to cause no resistance change within the range of “the magnetic field actually detected + the magnetic field generated in the portable device”.
  • the magnetic field region of “the magnetic field actually detected + the magnetic field generated in the portable device” is defined as the “sensitivity region”.
  • Comparative Example 1 Since Comparative Example 1 has the soft magnetic material 18, the magnetic shielding effect against the orthogonal magnetic field is exhibited. For this reason, the intensity of the sensitivity magnetic field in each of the state where the orthogonal magnetic field is not applied, the state where the orthogonal magnetic field is applied from the first direction, and the state where the orthogonal magnetic field is applied from the second direction opposite to the first direction are provided. Even if H is changed, the sensitivity variation in the sensitivity region seems to be small as shown in FIG.
  • the magnetic field range in the sensitivity region is a low magnetic field in which the sensitivity change becomes large with respect to the orthogonal magnetic field when the orthogonal magnetic field in the same range acts. Therefore, if the orthogonal magnetic field fluctuates in a low magnetic field, the sensitivity variation with respect to the sensitive magnetic field increases.
  • Comparative Example 1 has hysteresis in the magnetic sensitivity, but the hysteresis will be described later.
  • FIG. 10A shows the intensity H of the magnetic field from the sensitivity axis direction (hereinafter referred to as sensitivity magnetic field) in the structure of Comparative Example 2 described above and the resistance change rate (MR ratio) per unit magnetic field of the magnetoresistive effect element.
  • FIG. 10B is a graph showing the relationship. The intensity H of the magnetic field from the direction orthogonal to the sensitivity axis direction (hereinafter referred to as the orthogonal magnetic field) in the structure of Comparative Example 2 described above and the unit magnetic field of the magnetoresistive effect element. It is a graph which shows the relationship with the resistance change rate (MR ratio) per hit.
  • Comparative Example 2 does not have a soft magnetic body 18 and thus has no magnetic shielding effect against an orthogonal magnetic field. That is, the orthogonal magnetic field is not shielded but acts on the element portion as it is.
  • the permanent magnet layers 60 and 65 promote the single magnetic domain of the element part 12.
  • the bias magnetic field that acts on the element unit 12 appears to be apparent.
  • the bias magnetic field acting on the element unit 12 is apparently reduced. For this reason, the intensity H of the sensitivity magnetic field is changed in each of a state where the orthogonal magnetic field is not applied, a state where the orthogonal magnetic field is applied in the same direction as the bias magnetic field, and a state where the orthogonal magnetic field is applied in the opposite direction to the bias magnetic field.
  • the MR ratio at this time is examined, as shown in FIG. 10A, the sensitivity variation in the sensitivity region becomes very large.
  • the substantially V-shaped waveform portion whose sensitivity changes is the same magnetic field range as the sensitivity region due to the influence of the bias magnetic field by the permanent magnet layers 60 and 65. Shift slightly from within. Accordingly, even if the orthogonal magnetic field component fluctuates in the low magnetic field range equivalent to the sensitivity region, the sensitivity variation with respect to the sensitive magnetic field does not change as much as the comparative example 1 from the state of FIG. Since the orthogonal magnetic field cannot be shielded, the waveform portion where the sensitivity changes greatly changes compared to FIG. 9B, and therefore the variation in sensitivity with respect to the sensitive magnetic field cannot be reduced as much as in the embodiment described below.
  • FIG. 11A shows the relationship between the intensity H of the magnetic field from the sensitivity axis direction (hereinafter referred to as sensitivity magnetic field) and the resistance change rate (MR ratio) per unit magnetic field of the magnetoresistive effect element in the structure of this embodiment.
  • FIG. 10B shows the strength H of the magnetic field from the direction orthogonal to the sensitivity axis direction in the structure of this embodiment (hereinafter referred to as the orthogonal magnetic field) and the resistance change per unit magnetic field of the magnetoresistive effect element. It is a graph which shows the relationship with a ratio (MR ratio).
  • the soft magnetic body 18 has a magnetic shielding effect against an orthogonal magnetic field.
  • the soft magnetic body 18 in the present embodiment includes the extending portions 18a extending in the element length direction from both sides in the element length direction (X direction) of each element coupling body 61, the orthogonal magnetic field is It is easier to pass through the soft magnetic body 18 more effectively.
  • the permanent magnet layers 60 and 65 promote the formation of a single magnetic domain in the element portion 12. Therefore, the intensity H of the sensitivity magnetic field is changed in each of a state where the orthogonal magnetic field does not act, a state where the orthogonal magnetic field acts in the same direction as the bias magnetic field, and a state where the orthogonal magnetic field acts in the opposite direction to the bias magnetic field.
  • the sensitivity variation in the sensitivity region becomes very small as shown in FIG.
  • the substantially V-shaped waveform portion whose sensitivity changes due to the influence of the bias magnetic field by the permanent magnet layers 60 and 65 is shifted from the same magnetic field range as the sensitivity region.
  • the corrugated portion can be reduced by the magnetic shielding effect by the soft magnetic body 18. Therefore, even if the orthogonal magnetic field (disturbance magnetic field) within the same magnetic field range as the sensitivity region is not constant and fluctuates, the sensitivity variation with respect to the sensitivity magnetic field can be reduced.
  • the bias magnetic field from the permanent magnet layers 60 and 65 acts on the element portion 12 and the element portion 12 is free.
  • the formation of a single magnetic domain in the magnetic layer 36 is promoted. Therefore, the occurrence of hysteresis of the magnetic sensitivity can be reduced as compared with the configuration in which the permanent magnet layers 60 and 65 are not provided as in the comparative example 1 of FIG.
  • the sensitivity change region easily spreads with respect to the orthogonal magnetic field, and a part of hysteresis easily enters the orthogonal magnetic field range in the same magnetic field range as the sensitivity region as shown in FIG. Therefore, disturbance magnetic field resistance (magnetic shield effect) is likely to decrease. Also, hysteresis is likely to occur even with a sensitive magnetic field, and the magnetic field response to the sensitive magnetic field is reduced. Therefore, in order to appropriately supply a bias magnetic field to the entire element unit 12, the aspect ratio of the element unit 12 is preferably small, preferably 3 or less, and more preferably less than 1. As a result, the thickness of the permanent magnetic layer for appropriately supplying a bias magnetic field to the element portion 12 can also be reduced.
  • FIG. 2 is a modification of FIG.
  • the electrode layer 62 that connects between the end portions of the element coupling body 61 is formed in a straight line shape (band shape) in the Y direction. And passes through the lower side of the soft magnetic body 18 through an insulating layer. That is, the electrode layer 62 and the soft magnetic body 18 intersect in the height direction (Z direction in the drawing).
  • the electrode layer 62 of the part which connects the element coupling body 61 is electrically insulated with the soft magnetic body 18, it is not limited to formation in the lower part, You may form in the upper part.
  • the electrode layer 62 is formed so as to bypass the soft magnetic body 18 in a plane, but in FIG. 2, the electrode layer 62 and the soft magnetic body 18 are arranged in the height direction (Z direction in the drawing). Since they intersect, the length dimension of the magnetoresistive elements 2 and 3 in the X direction shown in the figure can be reduced, and the wiring resistance of the electrode layer 62 can also be reduced. Further, the insulation between the electrode layer 62 and the soft magnetic body 18 (the insulation layer 17 shown in FIG. 1B is interposed) is low, and even if a short circuit occurs, the sensor characteristics are not significantly affected.
  • the parasitic resistance can be reduced as compared with the case where the electrode layer 62 is formed with a permanent magnet layer.
  • such a problem does not occur.
  • the antiferromagnetic layer 33, the pinned magnetic layer 34, and the nonmagnetic layer 35 constituting each element unit 12 are not divided at the formation positions of the permanent magnet layers 60 and 65 and are integrated. ing. That is, at the positions where the permanent magnet layers 60 and 65 are formed, the protective layer 37 and the free magnetic layer 36 constituting the element portion 12 are scraped by ion milling or the like to form the concave portion 63. Therefore, the nonmagnetic layer 35 is exposed on the bottom surface 63 a of the recess 63. Note that the recess 63 may be formed by cutting a part of the nonmagnetic layer 35.
  • the permanent magnet layers 60 and 65 are provided in the recess 63. Since the pinned magnetic layer 34 is not divided by the configuration of FIG. 3, the magnetization of the pinned magnetic layer 34 can be stabilized in the Y direction shown in the figure, and the uniaxial anisotropy can be improved. Further, in the configuration in which the permanent magnet layers 60 and 65 are provided between the element portions 12 by dividing the pinned magnetic layer 34 and the antiferromagnetic layer 33, the electrical contact between the permanent magnet layers 60 and 65 and the element portion 12 is different. The parasitic resistance tends to increase because of the side surface, but the parasitic resistance can be reduced by making the electrical contact between the permanent magnet layers 60 and 65 and the element portion 12 planar contact as in this embodiment.
  • a low resistance layer 64 having a resistance value smaller than that of the intermediate permanent magnet layer 60 is formed on the upper surface of the intermediate permanent magnet layer 60.
  • the low resistance layer 64 is preferably formed of a nonmagnetic good conductor such as Au, Al, or Cu.
  • the low resistance layer 64 is formed by sputtering or plating in the same manner as the intermediate permanent magnet layer 60. As shown in FIG. 13, by forming the low resistance layer 64 on the intermediate permanent magnet layer 60, the parasitic resistance can be more effectively reduced.
  • the electrode layer 62 as a low-resistance layer is formed on the outer permanent magnet layer 65 so as to be superposed on the outer permanent magnet layer 65, so that the parasitic resistance component that does not contribute to the magnetoresistance change can be effectively reduced. .
  • the bias magnetic field of the permanent magnetic layer is formed at the center of the element. Since they are integrated, the outer bias magnetic field is weaker than that near the center. Therefore, it is preferable that the element orthogonal direction length of the outer permanent magnet layer 65 is longer than the length of the intermediate permanent magnet layer 60. Further, the same effect can be obtained by making the outer permanent magnet layer 65 thicker than the intermediate permanent magnet layer 60 by dividing the formation process.
  • the magnetic field becomes extremely strong in the vicinity of the corners where the intermediate permanent magnet layer 60 and the outer permanent magnet layer 65 are formed, by making the permanent magnet layer width wider than the element width W1, the portion with the strongest magnetic field strength is used as the element part. It is possible to prevent direct influence, and the margin of pattern formation alignment accuracy can be increased.
  • the number of element portions 12 constituting the magnetoresistive effect elements 2 and 3 may be only one. However, providing a plurality of element portions 12 in a meander shape is preferable because the element resistance can be increased and the power consumption can be reduced.
  • the magnetoresistive effect elements 2 and 3 and the fixed resistance elements 4 and 5 may be provided one by one. However, as shown in FIG. 7, a bridge circuit is formed, and the output obtained from the output extraction unit 14 is supplied to the differential amplifier 9. By using differential output, the output value can be increased and high-precision magnetic field detection can be performed.
  • the soft magnetic body 18 is provided on both sides of the element coupling body 61.
  • the soft magnetic body 18 has an insulating layer directly above or below the element coupling body 61. The structure provided may be sufficient.
  • the magnetic sensor 1 in this embodiment is used as, for example, a geomagnetic sensor (magnetic sensor module) shown in FIG.
  • a sensor unit of a bridge circuit shown in FIG. 7 is provided in each of the X-axis magnetic field detection unit 50, the Y-axis magnetic field detection unit 51, and the Z-axis magnetic field detection unit 52.
  • the fixed magnetization direction (P direction) of the fixed magnetic layer 34 of the element unit 12 of the magnetoresistive effect elements 2 and 3 faces the X direction that is the sensitivity axis
  • the Y-axis magnetic field detection unit In 51 the fixed magnetization direction (P direction) of the pinned magnetic layer 34 of the element portion 12 of the magnetoresistive effect elements 2 and 3 faces the Y direction which is the sensitivity axis
  • the magnetoresistive effect The pinned magnetization direction (P direction) of the pinned magnetic layer 34 of the element portion 12 of the elements 2 and 3 faces the Z direction that is the sensitivity axis.
  • the X-axis magnetic field detection unit 50, the Y-axis magnetic field detection unit 51, the Z-axis magnetic field detection unit 52, and the integrated circuit (ASIC) 54 are all provided on the base 53.
  • the formation surfaces of the magnetoresistive effect elements 2 and 3 of the X-axis magnetic field detection unit 50 and the Y-axis magnetic field detection unit 51 are both XY planes. Is formed on the XZ plane, and the formation surface of the magnetoresistive effect elements 2 and 3 of the Z-axis magnetic field detection unit 52 is the magnetoresistive effect element 2 of the X-axis magnetic field detection unit 50 and the Y-axis magnetic field detection unit 51. , 3 are orthogonal to the formation surface.
  • each detection unit is orthogonal to the sensitivity axis direction.
  • the magnetic field from the direction can be properly magnetically shielded, and the geomagnetism from the direction of the sensitivity axis of each detector can be detected appropriately.
  • a module in which the geomagnetic sensor and the acceleration sensor shown in FIG. 8 are combined may be used.
  • FIG. 1 is a top view which shows the part of the magnetoresistive effect element especially of the magnetic sensor in 1st Embodiment
  • (b) is a height direction (Z direction shown in figure) along the AA line of Fig.1 (a).
  • a partial cross-sectional view as seen from the direction of the arrow The top view which shows the part of especially the magnetoresistive effect element of the magnetic sensor in 2nd Embodiment
  • FIG. 2 is a partially enlarged sectional view taken along the line DD shown in FIG.
  • a partially enlarged plan view showing a part of the element part in the form of a preferable magnetoresistive element The figure for demonstrating the relationship between the fixed magnetization direction of the fixed magnetic layer of a magnetoresistive effect element, the magnetization direction of a free magnetic layer, and an electrical resistance value, Sectional drawing which shows the cut surface at the time of cut
  • FIG. 18 is a graph showing the relationship between the strength H of the magnetic field from the sensitivity axis direction and the resistance change rate (MR ratio) per unit magnetic field of the magnetoresistive effect element in the structure of FIG.
  • the graph which shows the relationship between the intensity
  • (A) is a magnetic field from the sensitivity axis direction in the structure of the comparative example 2 (the structure in which the soft magnetic body 18 shown in FIG. 1A is not provided, but the permanent magnet layers 60 and 65 are provided).
  • a graph showing the relationship between the intensity H and the resistance change rate (MR ratio) per unit magnetic field of the magnetoresistive effect element (b) shows the magnetic field from the direction orthogonal to the sensitivity axis direction in the structure of Comparative Example 2 described above.
  • a graph showing the relationship with the resistance change rate (MR ratio), (b) is the intensity H of the magnetic field from the direction orthogonal to the sensitivity axis direction in the structure of the present embodiment and the unit magnetic field of the magnetoresistive element.
  • a graph showing the relationship with the resistance change rate (MR ratio) of A graph showing the relationship between the strength H of the orthogonal magnetic field and the resistance change rate (MR ratio) per unit magnetic field of the magnetoresistive effect element for explaining that hysteresis occurs due to the aspect ratio of the element portion;

Abstract

L'invention permet de réaliser un capteur magnétique et un module de capteur magnétique qui permettent d'améliorer l'effet de blindage magnétique particulièrement dans une direction croisant orthogonalement l'axe de sensibilité tout en maintenant la sensibilité stable dans la direction d'axe de sensibilité. Une unité d'élément (12) et une couche d'aimant permanent intermédiaire (60) agencées dans la direction de longueur d'élément constituent un assemblage d'éléments couplés (61). Une couche d'aimant permanent externe (65) est agencée des deux côtés de l'assemblage d'éléments couplés dans la direction de longueur d'élément. Un corps magnétique doux (18) est agencé à une position sans contact par rapport à l'assemblage d'éléments couplés (61). Le corps magnétique doux (18) a une longueur L2 supérieure à l'assemblage d'éléments couplés (61). L'unité d'élément magnétique doux (18) comporte une partie étendue (18a) s'étendant à partir des deux côtés de la direction de longueur d'élément de l'assemblage d'éléments couplés (61) dans la direction de longueur d'élément.
PCT/JP2008/072921 2007-12-28 2008-12-17 Capteur magnétique et module de capteur magnétique WO2009084435A1 (fr)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011052596A1 (fr) * 2009-10-27 2011-05-05 アルプス電気株式会社 Capteur magnétique
JP2011095003A (ja) * 2009-10-27 2011-05-12 Alps Electric Co Ltd 磁気センサ
JP2011095004A (ja) * 2009-10-27 2011-05-12 Alps Electric Co Ltd 磁気センサ
JP2013055281A (ja) * 2011-09-06 2013-03-21 Alps Green Devices Co Ltd 電流センサ
US9810747B2 (en) 2015-03-27 2017-11-07 Tdk Corporation Magnetic sensor and magnetic encoder
US10557896B2 (en) 2017-03-24 2020-02-11 Tdk Corporation Magnetic sensor
US11506733B2 (en) 2020-08-27 2022-11-22 Tdk Corporation Magnetic sensor, and a current sensor and position detection device using a magnetic sensor

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JPS5634131A (en) * 1979-08-29 1981-04-06 Nec Corp Element for detecting magnetic field
JPS58197892A (ja) * 1982-05-14 1983-11-17 Hitachi Ltd 磁場検出素子
JPS59195889A (ja) * 1983-04-21 1984-11-07 Nec Corp ヨ−ク付強磁性磁気抵抗効果素子の製造方法
JP2005183614A (ja) * 2003-12-18 2005-07-07 Yamaha Corp 磁気センサ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5634131A (en) * 1979-08-29 1981-04-06 Nec Corp Element for detecting magnetic field
JPS58197892A (ja) * 1982-05-14 1983-11-17 Hitachi Ltd 磁場検出素子
JPS59195889A (ja) * 1983-04-21 1984-11-07 Nec Corp ヨ−ク付強磁性磁気抵抗効果素子の製造方法
JP2005183614A (ja) * 2003-12-18 2005-07-07 Yamaha Corp 磁気センサ

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011052596A1 (fr) * 2009-10-27 2011-05-05 アルプス電気株式会社 Capteur magnétique
JP2011095003A (ja) * 2009-10-27 2011-05-12 Alps Electric Co Ltd 磁気センサ
JP2011095004A (ja) * 2009-10-27 2011-05-12 Alps Electric Co Ltd 磁気センサ
JP2013055281A (ja) * 2011-09-06 2013-03-21 Alps Green Devices Co Ltd 電流センサ
US9810747B2 (en) 2015-03-27 2017-11-07 Tdk Corporation Magnetic sensor and magnetic encoder
US10557896B2 (en) 2017-03-24 2020-02-11 Tdk Corporation Magnetic sensor
US11209503B2 (en) 2017-03-24 2021-12-28 Tdk Corporation Magnetic sensor
US11650270B2 (en) 2017-03-24 2023-05-16 Tdk Corporation Magnetic sensor
US11914008B2 (en) 2017-03-24 2024-02-27 Tdk Corporation Magnetic sensor
US11506733B2 (en) 2020-08-27 2022-11-22 Tdk Corporation Magnetic sensor, and a current sensor and position detection device using a magnetic sensor
US11675028B2 (en) 2020-08-27 2023-06-13 Tdk Corporation Magnetic sensor, and a current sensor and position detection device using a magnetic sensor

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