WO2009082129A2 - Organic thin film transistor and method for preparing thereof - Google Patents
Organic thin film transistor and method for preparing thereof Download PDFInfo
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- WO2009082129A2 WO2009082129A2 PCT/KR2008/007536 KR2008007536W WO2009082129A2 WO 2009082129 A2 WO2009082129 A2 WO 2009082129A2 KR 2008007536 W KR2008007536 W KR 2008007536W WO 2009082129 A2 WO2009082129 A2 WO 2009082129A2
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- organic
- thin film
- film transistor
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- 239000010409 thin film Substances 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
- 239000011248 coating agent Substances 0.000 claims abstract description 14
- 238000000576 coating method Methods 0.000 claims abstract description 14
- 238000002360 preparation method Methods 0.000 claims abstract description 5
- 239000000126 substance Substances 0.000 claims description 33
- 239000010408 film Substances 0.000 claims description 16
- 238000009413 insulation Methods 0.000 claims description 16
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 9
- -1 cycloakyl Chemical group 0.000 claims description 9
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 8
- 125000003545 alkoxy group Chemical group 0.000 claims description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 6
- 125000005309 thioalkoxy group Chemical group 0.000 claims description 6
- 229930192474 thiophene Natural products 0.000 claims description 6
- 125000000217 alkyl group Chemical group 0.000 claims description 5
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims description 4
- 125000000000 cycloalkoxy group Chemical group 0.000 claims description 4
- RAABOESOVLLHRU-UHFFFAOYSA-N diazene Chemical compound N=N RAABOESOVLLHRU-UHFFFAOYSA-N 0.000 claims description 4
- 229910000071 diazene Inorganic materials 0.000 claims description 4
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 claims description 4
- CLYVDMAATCIVBF-UHFFFAOYSA-N pigment red 224 Chemical compound C=12C3=CC=C(C(OC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)OC(=O)C4=CC=C3C1=C42 CLYVDMAATCIVBF-UHFFFAOYSA-N 0.000 claims description 4
- NAZODJSYHDYJGP-UHFFFAOYSA-N 7,18-bis[2,6-di(propan-2-yl)phenyl]-7,18-diazaheptacyclo[14.6.2.22,5.03,12.04,9.013,23.020,24]hexacosa-1(23),2,4,9,11,13,15,20(24),21,25-decaene-6,8,17,19-tetrone Chemical compound CC(C)C1=CC=CC(C(C)C)=C1N(C(=O)C=1C2=C3C4=CC=1)C(=O)C2=CC=C3C(C=C1)=C2C4=CC=C3C(=O)N(C=4C(=CC=CC=4C(C)C)C(C)C)C(=O)C1=C23 NAZODJSYHDYJGP-UHFFFAOYSA-N 0.000 claims description 2
- 229910016048 MoW Inorganic materials 0.000 claims description 2
- 229920000265 Polyparaphenylene Polymers 0.000 claims description 2
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 claims description 2
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims description 2
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- FVDOBFPYBSDRKH-UHFFFAOYSA-N perylene-3,4,9,10-tetracarboxylic acid Chemical compound C=12C3=CC=C(C(O)=O)C2=C(C(O)=O)C=CC=1C1=CC=C(C(O)=O)C2=C1C3=CC=C2C(=O)O FVDOBFPYBSDRKH-UHFFFAOYSA-N 0.000 claims description 2
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 claims description 2
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 claims description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims description 2
- 229920002098 polyfluorene Polymers 0.000 claims description 2
- 229920000123 polythiophene Polymers 0.000 claims description 2
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 claims description 2
- 125000001544 thienyl group Chemical group 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 1
- 238000002347 injection Methods 0.000 abstract description 8
- 239000007924 injection Substances 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 67
- 239000000758 substrate Substances 0.000 description 23
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 9
- 238000002207 thermal evaporation Methods 0.000 description 9
- 239000007772 electrode material Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- JRMUNVKIHCOMHV-UHFFFAOYSA-M tetrabutylammonium bromide Chemical compound [Br-].CCCC[N+](CCCC)(CCCC)CCCC JRMUNVKIHCOMHV-UHFFFAOYSA-M 0.000 description 3
- 238000004832 voltammetry Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- HKNRNTYTYUWGLN-UHFFFAOYSA-N dithieno[3,2-a:2',3'-d]thiophene Chemical compound C1=CSC2=C1SC1=C2C=CS1 HKNRNTYTYUWGLN-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000009975 flexible effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- VJYJJHQEVLEOFL-UHFFFAOYSA-N thieno[3,2-b]thiophene Chemical compound S1C=CC2=C1C=CS2 VJYJJHQEVLEOFL-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
- H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/125—Deposition of organic active material using liquid deposition, e.g. spin coating using electrolytic deposition e.g. in-situ electropolymerisation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
Definitions
- the present invention relates to an organic thin film transistor and a method for preparation thereof, more particularly to an organic thin film transistor which improves interfacial properties between an organic semiconductor layer and source/drain electrodes, and increases capability of carrier injection from source/drain electrodes to organic semiconductor layer, thus improving electrical performance of transistor, and a method for preparation thereof.
- Performance of organic thin film transistor is evaluated by field effect mobility, Ion/Ioff ratio, threshold voltage, and subthreshold slope, etc., and practically, it approaches to that of silicon thin film transistor.
- performance of the organic thin film transistor is dependent upon crystallinity of organic semiconductor layer, charge property of the interface between gate insulation film and organic semiconductor layer, capability of carrier injection into the interface between source/drain electrodes and organic semiconductor layer, etc.
- an object of the present invention to provide an organic thin film transistor comprising an organic buffer layer which is interposed between an organic semiconductor layer and source/drain electrodes, improves interfacial property between the organic semiconductor layer and the source/drain electrodes, and lowers energy barrier between the organic semiconductor and metal electrodes to decrease contact resistance thus increasing capability of carrier injection, thereby improving performance of transistor, and an organic light emitting display comprising the same.
- the present invention provides an organic thin film transistor comprising: a source electrode and a drain electrode; an organic semiconductor layer electrically connected to the source electrode and the drain electrode; an organic buffer layer interposed between the source electrode and the organic semiconductor layer and/or between the drain electrode and the organic semiconductor layer; a gate electrode insulated from the source electrode, drain electrode and organic semiconductor layer; and a gate insulation film for insulating the gate electrode from the source electrode, drain electrode and organic semiconductor layer.
- the present invention also provides a method for preparation of an organic thin film transistor comprising interposing an organic buffer layer between source/drain electrodes and an organic semiconductor layer, wherein the organic buffer layer is coated on at least one of the source electrode and the drain electrode by electrochemical coating.
- the present invention also provides an organic light-emitting display comprising the organic thin film transistor of the present invention; and an organic light emitting device electrically connected to the organic thin film transistor
- interfacial property between organic semiconductor layer and source/drain electrodes and capability of carrier injection can be improved thus improving transistor performance.
- the organic buffer layer can be selectively coated on source electrode, drain electrode or source/drain electrodes by electrochemical coating.
- Fig. 1 is a cross sectional view schematically showing an apparatus and method for forming an organic buffer layer by electrochemical coating according to one preferred embodiment of the present invention.
- Fig. 2 is a cross sectional view schematically showing the cross section of the organic thin film transistor according to one preferred embodiment of the present invention.
- Fig. 3 is a cross sectional view schematically showing the cross section of the organic thin film transistor according to another preferred embodiment of the present invention.
- the organic thin film transistor of the present invention comprises a source electrode and a drain electrode; an organic semiconductor layer electrically connected to the source electrode and the drain electrode; an organic buffer layers interposed between the source electrode and the organic semiconductor layer and/or between the drain electrode and the organic semiconductor layer; a gate electrode insulated from the source electrode, drain electrode and organic semiconductor layer; and a gate insulation film for insulating the gate electrode from the source electrode, drain electrode and organic semiconductor layer.
- the organic buffer layer can be made of thiophene-based compound or acene- thiophene based compound.
- thiophene based compound dithieno-thiophene, prophenyl-thiophene, thienothiophene or derivatives thereof can be used.
- the thiophene-based compound is represented by one of the following Chemical Formulas 1 to 5: [Chemical Formula 1]
- the acene-thiophene based compound can be represented by one of the following Chemical Formulas 6 to 14:
- Ri is independently hydroxyl, alkyl, cycloalkyl, alkoxy, cycloalkoxy or thioalkoxy group, preferably hydroxyl
- Ci -C is alkyl, alkoxy or thioalkoxy; and, n is independently 1 or 2).
- the organic buffer layer is not coated by spin coating, dipping, etc. of the prior art, but is coated by electrochemical coating, thus it can be selectively coated on source electrode, drain electrode or source/drain electrodes.
- the electrochemical coating can avoid the entire surface coating of spin coating or dipping of the prior art, and it allows an organic buffer layer to be coated only on a required part with maintaining excellent property.
- the source/drain electrodes can be formed as a single layer or multi-layers, and made of at least one selected from the group consisting of Al, Ag, Mo, Au, Pt, Pd, Ni, Ir, Cr, Ti, MoW, or an alloy thereof. And, the source/drain electrodes can be made of transparent materials, for examples, ITO, IZO, ZnO and In 2 ⁇ 3 , etc.
- the organic semiconductor layer can be made of at least one selected from the group consisting of pentacene, tetracene, anthracene, naphthalene, alpha-6-thiophene, alpha-4-thiophene, perylene, rubrene, cororene, perylenetetracarboxylicdiimide, perylenetetracarboxylicdianhydride, polythiophene, poly-3-hexylthiophene, polyparaphenylenevinylene, polyparaphenylene, polyfluorene, polythiophenevinylene, polythiophene-heterocyclic aromatic copolymer, oligoacene of naphthalene, oligothiophene of alpha-5-thiophene, phthalocyanin, pyromelitic dianhydride, pyromelitic diimide, perylenetetracarboxylic acid dianhydride, perylenetetracarboxylic acid diimi
- Fig. 1 is a cross sectional view schematically showing the method of forming organic buffer layer by electrochemical coating according to one preferred embodiment of the present invention.
- Electrode(l) and backplate electrode(3) are formed.
- electrolyte As the electrolyte,
- TBAB tetrabutylammonium tetraflluoroborate
- solvent MC(methylene chloride) can be used.
- Fig. 2 is a cross sectional view schematically showing the organic thin film transistor according to one preferred embodiment of the present invention.
- a source electrode(31), a drain electrode(33), and an organic semiconductor layer(51) electrically connected to the source electrode(31) and drain electrode(33) are arranged on the substrate(l 1).
- the source electrode(31) and drain electrode(33) can be made of conductive materials as mentioned above, and formed on the substrate(l 1) by depositing on the entire surface of the substrate and patterning using photolithography, or by depositing only on a determined area of the substrate using mask. It is preferable to form the source electrode(31) and drain electrode(33) by thermal deposition using shadow mask.
- the organic semiconductor layer (51) which is electrically connected to the source electrode(31) and drain electrode(33) does not directly contact with the source electrode(31) and drain electrode(3), but is systematically connected to the source electrode(31) and drain electrode(33) through an organic buffer layers(41, 43) respectively interposed between the source electrode(31) and the organic semiconductor layer(51) and between the drain electrode(33) and the organic semiconductor layer(51).
- the source electrode(31) and drain electrode(33) are formed on the substrate(l l), and then, organic buffer layers(41), 43) are formed on the source electrode(31) and drain electrode(33) according to the method as shown in Fig. 1, and dried in an oven of 140 ° C for 2 hours, and then, organic semiconductor ⁇ 1) is formed thereon.
- the organic semiconductor layer(51) can be formed by thermal deposition at a rate of 0.2 A/sec, at a substrate temperature of 80 ° C , under vacuum of 1 x 10 "7 torr, using shadow mask. On the organic semiconductor layer(51), a gate insulation film(23) is arranged.
- the gate insulation film(23) insulates a gate electrode(21) formed thereon from the source electrode(31), drain electrode(33) and organic semiconductor layer(51). And, it can be made of inorganic substances such as metal oxide, for examples, silicon oxide, silicon nitride, aluminum oxide, etc., or it can be made of organics such as polyvinyl phenol, polyvinyl alcohol, polymethylmethacrylate, polystyrene, or analogs thereof.
- a gate electrode(21) made of conductive materials such as Al is arranged on the gate insulation film(23).
- the gate electrode(21) can be formed by thermal deposition using shadow mask.
- the organic thin film transistor according to the embodiment of Fig. 2 is of staggered type, the present invention is not limited thereto.
- Fig. 3 is a cross sectional view showing the organic thin film transistor according to another preferred embodiment of the present invention.
- the present invention can also be applied to inverted coplanar type organic thin film transistor wherein source electrode(35) and drain electrode(37) are arranged on a gate electrode(25), an organic semiconductor layer(53) is arranged on the source electrode(35) and drain electrode(37), and a gate insulation film(37) is arranged between the source/drain electrodes(35, 37) and gate electrode(25).
- organic buffer layers(45, 47) are arranged between the source/drain electrode(35, 37) and the organic semiconductor layer(53).
- the organic thin film transistor of the present invention comprises organic buffer layers interposed between organic semiconductor layer and source/drain electrodes, thus improving interfacial property therebetween and capability of carrier injection, thereby improving device property of transistor.
- the present invention also provides an organic light-emitting display comprising the organic thin film transistor of the present invention and organic light-emitting device electrically connected to the organic thin film transistor.
- the organic light-emitting display can be of various types such as active matrix(AM) type.
- the organic light-emitting display of the present invention comprises the organic thin film transistor according to the present invention, it can exactly image input signals.
- Example 1 As shown in Fig. 2, source/drain electrodes(31, 33) were formed on a substrate(l 1) by thermal deposition using shadow mask. As electrode material, Au was used.
- the sample substrate(2) on which the source/drain electrodes(31, 33) are formed was immersed in a mixed solution of electrolyte TBAB(tetrabutylammonium tetrafluoroborate) and solvent MC(Methylene Chloride) wherein Ref. electrode(l) and backplate electrode(3) are formed, and, using Epsilon CV(cyclic voltametry), voltage was applied between the source/drain electrodes(31, 33) of the sample substrate(2) and the backplate electrode(3) while applying constant voltage to Ref. electrode(l), to form organic buffer layers(41, 43) on the source/drain electrodes(31, 33) of the sample substrate(2).
- the formed organic buffer layers(41 , 43) were dried in an oven of 140 ° C for 2 hours.
- an organic semiconductor layer(51) made of pentacene was formed by thermal deposition at a rate of 0.2 A/sec, at a substrate temperature of 80 ° C, under vacuum of 1 x 10 "7 torr, using shadow mask.
- a gate insulation film(23) was formed using silicon oxide, and on the gate insulation film(23), a gate electrode(21) was formed by thermal deposition using shadow mask, thus preparing staggered type organic thin film transistor.
- As the gate electrode material Al was used.
- a gate electrode(25) was formed by thermal deposition using shadow mask.
- the gate electrode material Al was used.
- a gate insulation film(27) was formed using silicon oxide.
- source/drain electrodes(35, 37) were formed by thermal deposition using shadow mask.
- As the electrode material Au was used.
- the sample substrate(2) which comprises gate electrode(25), gate insulation film(27) and source/drain electrodes(35, 37) formed on a substrate(13) was immersed in a mixed solution of TBAB(tetrabutylammonium tetrafluoroborate) and MC(Methylene Chloride) wherein Ref. electrode(l) and backplate electrode(3) are formed. And then, using Epsilon CV(cyclic voltametry), voltage was applied between the source/drain electrodes(35, 37) of the sample substrate(2) and the backplate electrode(3) while applying constant voltage to Ref. electrode(l), thus forming organic buffer layers(45, 47) on the source/drain electrodes(35, 37) excluding the gate insulation film(27). The formed organic buffer layers(45, 47) were dried in an oven of 140 ° C for about 2 hours.
- an organic semiconductor layer(53) made of pentacene was formed by thermal deposition at a rate of 0.2 A/sec, at s substrate temperature of 80 ° C , under vacuum of 1 x 10 "7 torr, using shadow mask, thus preparing inverted coplanar type organic thin film transistor.
- interfacial property between organic semiconductor layer and source/drain electrodes and capability of carrier injection can be improved thus improving transistor performance.
- the organic buffer layer can be selectively coated on source electrode, drain electrode or source/drain electrodes by electrochemical coating.
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- Thin Film Transistor (AREA)
Abstract
The present invention relates to an organic thin film transistor and a method for preparation thereof. Particularly, the present invention relates to an organic thin film transistor which comprises an organic buffer layer formed between an organic semiconductor layer and source/drain electrodes by electrochemical coating, thus improving interfacial properties between the organic semiconductor layer and source/drain electrodes, and increasing capability of carrier injection from source/drain electrodes to organic semiconductor layer, thereby improving electrical performance of transistor, and a method for preparing the same.
Description
ORGANIC THIN FILM TRANSISTOR AND METHOD FOR PREPARING THEREOF
[Technical Field]
The present invention relates to an organic thin film transistor and a method for preparation thereof, more particularly to an organic thin film transistor which improves interfacial properties between an organic semiconductor layer and source/drain electrodes, and increases capability of carrier injection from source/drain electrodes to organic semiconductor layer, thus improving electrical performance of transistor, and a method for preparation thereof.
[Background Art]
Studies regarding an organic thin film transistor using organics as a semiconductor layer have begun since the year of 1980, and many studies are now in the progress worldwide. Since manufacturing process of the organic thin film transistor is simple and inexpensive, and can be conducted at low temperature compared to the existing silicon thin film transistor, it can satisfy large and thin size and flexible property recently required in flat panel display.
Performance of organic thin film transistor is evaluated by field effect mobility, Ion/Ioff ratio, threshold voltage, and subthreshold slope, etc., and practically, it approaches to that of silicon thin film transistor.
And, performance of the organic thin film transistor is dependent upon crystallinity of organic semiconductor layer, charge property of the interface between gate insulation film and organic semiconductor layer, capability of carrier injection into the interface between source/drain electrodes and organic semiconductor layer, etc.
However, increase in contact resistance due to energy barrier between the organic semiconductor layer and source/drain electrodes of the organic thin film transistor makes carrier injection difficult, which deteriorates properties of the organic thin film transistor.
Thus, various attempts are made to solve the above problem.
[Disclosure] [Technical Problem] In order to solve the above problems of the prior art, it is an object of the present invention to provide an organic thin film transistor comprising an organic buffer layer which is interposed between an organic semiconductor layer and source/drain electrodes, improves interfacial property between the organic semiconductor layer and the source/drain electrodes, and lowers energy barrier between the organic semiconductor and metal electrodes to decrease contact resistance thus increasing capability of carrier injection, thereby improving performance of transistor, and an organic light emitting display comprising the same.
It is another object of the present invention to provide a method for preparing an organic thin film transistor which comprises simultaneously coating an organic buffer layer on source electrode and drain electrode, or selectively coating it on source electrode or drain electrode by electrochemical coating.
[Technical Solution]
In order to achieve the objects, the present invention provides an organic thin film transistor comprising: a source electrode and a drain electrode; an organic semiconductor layer electrically connected to the source electrode and the drain electrode; an organic buffer layer interposed between the source electrode and the organic semiconductor layer and/or between the drain electrode and the organic semiconductor layer; a gate electrode insulated from the source electrode, drain electrode and organic semiconductor layer; and a gate insulation film for insulating the gate electrode from the source electrode, drain electrode and organic semiconductor layer.
The present invention also provides a method for preparation of an organic thin film transistor comprising interposing an organic buffer layer between source/drain
electrodes and an organic semiconductor layer, wherein the organic buffer layer is coated on at least one of the source electrode and the drain electrode by electrochemical coating.
The present invention also provides an organic light-emitting display comprising the organic thin film transistor of the present invention; and an organic light emitting device electrically connected to the organic thin film transistor
[Advantageous Effects]
According to the present invention, interfacial property between organic semiconductor layer and source/drain electrodes and capability of carrier injection can be improved thus improving transistor performance. And, the organic buffer layer can be selectively coated on source electrode, drain electrode or source/drain electrodes by electrochemical coating.
[Brief Description of Drawings] Fig. 1 is a cross sectional view schematically showing an apparatus and method for forming an organic buffer layer by electrochemical coating according to one preferred embodiment of the present invention.
Fig. 2 is a cross sectional view schematically showing the cross section of the organic thin film transistor according to one preferred embodiment of the present invention.
Fig. 3 is a cross sectional view schematically showing the cross section of the organic thin film transistor according to another preferred embodiment of the present invention.
* Explanations of reference numerals of drawings * 1 : Ref. electrode
2: substrate on which source/drain electrodes are formed (sample substrate)
3: backplate electrode 1 1 , 13: substrate
21, 25: gate electrode 23, 27: gate insulation film
31, 35: source electrode 33, 37: drain electrode
41, 43, 45, 47: organic buffer layer 51, 53: organic semiconductor layer
[Mode for Invention]
The present invention will now be explained in detail.
The organic thin film transistor of the present invention comprises a source electrode and a drain electrode; an organic semiconductor layer electrically connected to the source electrode and the drain electrode; an organic buffer layers interposed between the source electrode and the organic semiconductor layer and/or between the drain electrode and the organic semiconductor layer; a gate electrode insulated from the source electrode, drain electrode and organic semiconductor layer; and a gate insulation film for insulating the gate electrode from the source electrode, drain electrode and organic semiconductor layer. The organic buffer layer can be made of thiophene-based compound or acene- thiophene based compound.
As the thiophene based compound, dithieno-thiophene, prophenyl-thiophene, thienothiophene or derivatives thereof can be used. Specifically, the thiophene-based compound is represented by one of the following Chemical Formulas 1 to 5: [Chemical Formula 1]
[Chemical Formula 2]
[Chemical Formula 3]
[Chemical Formula 4]
(wherein R2 and R3 are independently hydroxyl, alkyl, cycloakyl, alkoxy, cycloalkoxy or thioalkoxy group, preferably hydroxyl, Q-Cis alkyl, alkoxy or thioalkoxy group; and m is an integer of from 1 to 6) [Chemical Formula 5]
The acene-thiophene based compound can be represented by one of the following Chemical Formulas 6 to 14:
[Chemical Formula 6]
[Chemical Formula 7]
[Chemical Formula 8]
[Chemical Formula 10]
[Chemical Formula 1 1]
[Chemical Formula 12]
[Chemical Formula 13]
[Chemical Formula 14]
(wherein Ri is independently hydroxyl, alkyl, cycloalkyl, alkoxy, cycloalkoxy or thioalkoxy group, preferably hydroxyl, Ci -C is alkyl, alkoxy or thioalkoxy; and, n is independently 1 or 2).
The organic buffer layer is not coated by spin coating, dipping, etc. of the prior art, but is coated by electrochemical coating, thus it can be selectively coated on source electrode, drain electrode or source/drain electrodes. The electrochemical coating can avoid the entire surface coating of spin coating or dipping of the prior art, and it allows an organic buffer layer to be coated only on a required part with maintaining excellent property.
The source/drain electrodes can be formed as a single layer or multi-layers, and made of at least one selected from the group consisting of Al, Ag, Mo, Au, Pt, Pd, Ni, Ir, Cr, Ti, MoW, or an alloy thereof. And, the source/drain electrodes can be made of transparent materials, for examples, ITO, IZO, ZnO and In2θ3, etc.
The organic semiconductor layer can be made of at least one selected from the group consisting of pentacene, tetracene, anthracene, naphthalene, alpha-6-thiophene, alpha-4-thiophene, perylene, rubrene, cororene, perylenetetracarboxylicdiimide, perylenetetracarboxylicdianhydride, polythiophene, poly-3-hexylthiophene, polyparaphenylenevinylene, polyparaphenylene, polyfluorene, polythiophenevinylene, polythiophene-heterocyclic aromatic copolymer, oligoacene of naphthalene, oligothiophene of alpha-5-thiophene, phthalocyanin, pyromelitic dianhydride, pyromelitic diimide, perylenetetracarboxylic acid dianhydride, perylenetetracarboxylic acid diimide and derivatives thereof.
Preferred embodiments of the present invention will be explained in detail with reference to the attached drawings.
Fig. 1 is a cross sectional view schematically showing the method of forming organic buffer layer by electrochemical coating according to one preferred embodiment of the present invention.
Referring to Fig. 1, a substrate(2) on which source/drain electrodes(31 , 33, 35,
37)are formed are immersed in a mixed solution of an electrolyte and a solvent, wherein
Ref. electrode(l) and backplate electrode(3) are formed. As the electrolyte,
TBAB(tetrabutylammonium tetraflluoroborate) can be used. As the solvent, MC(methylene chloride) can be used.
Using Epsilon CV(cyclic voltametry), voltage is applied between source/drain electrodes(31, 33, 35, 37) of the sample substrate(2) and the backplate electrode(3) with controlling its level while applying constant voltage to Ref. electrode(l). Then, organic buffer layers(41, 43, 45, 47) are formed on the source/drain electrodes(31, 33, 35, 37) of the sample substrate(2). Specifically, if the source/drain electrodes(31 , 33, 35, 37) of the sample substrate(2) are simultaneously connected and voltage is applied between the backplate electrode(3) and the source/drain electrodes, organic buffer layers(41, 43, 45, 47) can be simultaneously formed on the source/drain electrodes. If only the source electrode is connected and voltage is applied, the organic buffer layers can be formed only on the source electrodes(31, 35). If only the drain electrode is connected and voltage is applied, the organic buffer layers can be formed only on the drain electrodes(33, 37).
As explained above, the organic buffer layers(41, 43, 45, 47) can be formed on the source/drain electrodes(31, 33, 35, 37) excluding gate insulation film. Fig. 2 is a cross sectional view schematically showing the organic thin film transistor according to one preferred embodiment of the present invention.
Referring to Fig. 2, a source electrode(31), a drain electrode(33), and an organic semiconductor layer(51) electrically connected to the source electrode(31) and drain electrode(33) are arranged on the substrate(l 1).
The source electrode(31) and drain electrode(33) can be made of conductive materials as mentioned above, and formed on the substrate(l 1) by depositing on the entire surface of the substrate and patterning using photolithography, or by depositing only on a determined area of the substrate using mask. It is preferable to form the source electrode(31) and drain electrode(33) by thermal deposition using shadow mask.
The organic semiconductor layer (51) which is electrically connected to the source electrode(31) and drain electrode(33) does not directly contact with the source electrode(31) and drain electrode(3), but is systematically connected to the source electrode(31) and drain electrode(33) through an organic buffer layers(41, 43) respectively interposed between the source electrode(31) and the organic semiconductor layer(51) and between the drain electrode(33) and the organic semiconductor layer(51). Thus, in the case of staggered type organic thin film transistor as shown in Fig. 2, the source electrode(31) and drain electrode(33) are formed on the substrate(l l), and then, organic buffer layers(41), 43) are formed on the source electrode(31) and drain electrode(33) according to the method as shown in Fig. 1, and dried in an oven of 140 °C for 2 hours, and then, organic semiconductor^ 1) is formed thereon.
The organic semiconductor layer(51) can be formed by thermal deposition at a rate of 0.2 A/sec, at a substrate temperature of 80°C , under vacuum of 1 x 10"7 torr, using shadow mask. On the organic semiconductor layer(51), a gate insulation film(23) is arranged.
The gate insulation film(23) insulates a gate electrode(21) formed thereon from the source electrode(31), drain electrode(33) and organic semiconductor layer(51). And, it can be made of inorganic substances such as metal oxide, for examples, silicon oxide, silicon nitride, aluminum oxide, etc., or it can be made of organics such as polyvinyl phenol, polyvinyl alcohol, polymethylmethacrylate, polystyrene, or analogs thereof.
On the gate insulation film(23), a gate electrode(21) made of conductive materials such as Al is arranged. The gate electrode(21) can be formed by thermal deposition using shadow mask.
Although the organic thin film transistor according to the embodiment of Fig. 2 is of staggered type, the present invention is not limited thereto.
Fig. 3 is a cross sectional view showing the organic thin film transistor according to another preferred embodiment of the present invention. As shown in Fig. 3, the present invention can also be applied to inverted coplanar type organic thin film transistor wherein source electrode(35) and drain electrode(37) are arranged on a gate electrode(25), an organic semiconductor layer(53) is arranged on the source electrode(35) and drain electrode(37), and a gate insulation film(37) is arranged between the source/drain electrodes(35, 37) and gate electrode(25). In this case, organic buffer layers(45, 47) are arranged between the source/drain electrode(35, 37) and the organic semiconductor layer(53).
As explained above, the organic thin film transistor of the present invention comprises organic buffer layers interposed between organic semiconductor layer and source/drain electrodes, thus improving interfacial property therebetween and capability of carrier injection, thereby improving device property of transistor.
The present invention also provides an organic light-emitting display comprising the organic thin film transistor of the present invention and organic light-emitting device electrically connected to the organic thin film transistor.
The organic light-emitting display can be of various types such as active matrix(AM) type.
Since the organic light-emitting display of the present invention comprises the organic thin film transistor according to the present invention, it can exactly image input signals.
The present invention will be explained with reference to the following examples, however, these examples are only to illustrate the present invention and the scope of the present invention is not limited thereto.
Example 1
As shown in Fig. 2, source/drain electrodes(31, 33) were formed on a substrate(l 1) by thermal deposition using shadow mask. As electrode material, Au was used.
Then, the sample substrate(2) on which the source/drain electrodes(31, 33) are formed was immersed in a mixed solution of electrolyte TBAB(tetrabutylammonium tetrafluoroborate) and solvent MC(Methylene Chloride) wherein Ref. electrode(l) and backplate electrode(3) are formed, and, using Epsilon CV(cyclic voltametry), voltage was applied between the source/drain electrodes(31, 33) of the sample substrate(2) and the backplate electrode(3) while applying constant voltage to Ref. electrode(l), to form organic buffer layers(41, 43) on the source/drain electrodes(31, 33) of the sample substrate(2). The formed organic buffer layers(41 , 43) were dried in an oven of 140 °C for 2 hours.
Then, on the organic buffer layers(41, 43), an organic semiconductor layer(51) made of pentacene was formed by thermal deposition at a rate of 0.2 A/sec, at a substrate temperature of 80 °C, under vacuum of 1 x 10"7 torr, using shadow mask.
On the organic semiconductor layer(51), a gate insulation film(23) was formed using silicon oxide, and on the gate insulation film(23), a gate electrode(21) was formed by thermal deposition using shadow mask, thus preparing staggered type organic thin film transistor. As the gate electrode material, Al was used. Example 2
As shown in Fig. 3, on the substrate(13), a gate electrode(25) was formed by thermal deposition using shadow mask. As the gate electrode material, Al was used. Then, on the gate electrode(25), a gate insulation film(27) was formed using silicon oxide.
On the gate insulation film(27), source/drain electrodes(35, 37) were formed by thermal deposition using shadow mask. As the electrode material, Au was used.
As shown in Fig. 1, the sample substrate(2) which comprises gate electrode(25), gate insulation film(27) and source/drain electrodes(35, 37) formed on a substrate(13) was immersed in a mixed solution of TBAB(tetrabutylammonium tetrafluoroborate) and
MC(Methylene Chloride) wherein Ref. electrode(l) and backplate electrode(3) are formed. And then, using Epsilon CV(cyclic voltametry), voltage was applied between the source/drain electrodes(35, 37) of the sample substrate(2) and the backplate electrode(3) while applying constant voltage to Ref. electrode(l), thus forming organic buffer layers(45, 47) on the source/drain electrodes(35, 37) excluding the gate insulation film(27). The formed organic buffer layers(45, 47) were dried in an oven of 140 °C for about 2 hours.
Then, on the organic buffer layers(45, 47), an organic semiconductor layer(53) made of pentacene was formed by thermal deposition at a rate of 0.2 A/sec, at s substrate temperature of 80 °C , under vacuum of 1 x 10"7torr, using shadow mask, thus preparing inverted coplanar type organic thin film transistor.
[Industrial Applicability]
According to the present invention, interfacial property between organic semiconductor layer and source/drain electrodes and capability of carrier injection can be improved thus improving transistor performance. And, the organic buffer layer can be selectively coated on source electrode, drain electrode or source/drain electrodes by electrochemical coating.
Claims
[CLAIMS] [Claim 1 ]
An organic thin film transistor comprising: a source electrode and a drain electrode; an organic semiconductor layer electrically connected to the source electrode and the drain electrode; an organic buffer layers interposed between the source electrode and the organic semiconductor layer and/or between the drain electrode and the organic semiconductor layer; a gate electrode insulated from the source electrode, drain electrode and organic semiconductor layer; and a gate insulation film for insulating the gate electrode from the source electrode, drain electrode and organic semiconductor layer.
[Claim 2] The organic thin film transistor according to claim 1, wherein the organic buffer layer is made of thiophene-based compound or acene-thiophene based compound. [Claim 3]
The organic thin film transistor according to claim 2, wherein the thiophene- based compound is represented by one of the following Chemical Formulas 1 to 5: [Chemical Formula 1]
[Chemical Formula 2]
[Chemical Formula 3]
[Chemical Formula 4]
(wherein R2 and R3 are independently hydroxyl, alkyl, cycloakyl, alkoxy, cycloalkoxy or thioalkoxy group, and m is an integer of from 1 to 6) [Chemical Formula 5]
(wherein Ar is C4-C]S thienyl group).
[Claim 4] The organic thin film transistor according to claim 2, wherein the acene- thiophene based compound is represented by one of the following Chemical Formulas 6 to 14:
[Chemical Formula 6]
[Chemical Formula 7]
[Chemical Formula 9]
[Chemical Formula 10]
[Chemical Formula 1 1]
[Chemical Formula 12]
[Chemical Formula 13]
[Chemical Formula 14]
(wherein R| is independently hydroxyl, alky], cycloalkyl, alkoxy, cycloalkoxy or thioalkoxy group, and n is independently 1 or 2). [Claim 5]
The organic thin film transistor according to claim 1, wherein the organic buffer layer is formed on at least one of the source electrode and the drain electrode by electrochemical coating. [Claim 6]
The organic thin film transistor according to claim 1, wherein the source/drain electrode is made of at least one selected from the group consisting of Al, Ag, Mo, Au, Pt, Pd, Ni, Ir, Cr, Ti, MoW, ITO, IZO, ZnO and In2O3.
[Claim 7]
The organic thin film transistor according to claim 1, wherein the organic semiconductor layer is made of at least one selected from the group consisting of pentacene, tetracene, anthracene, naphthalene, alpha-6-thiophene, alpha-4-thiophene, perylene, rubrene, cororene, perylenetetracarboxylicdiimide, perylenetetracarboxylicdianhydride, polythiophene, poly-3-hexylthiophene, polyparaphenylenevinylene, polyparaphenylene, polyfluorene, polythiophenevinylene, polythiophene-heterocyclic aromatic copolymer, oligoacene of naphthalene, oligothiophene of alpha-5-thiophene, phthalocyanin, pyromelitic dianhydride, pyromelitic diimide, perylenetetracarboxylic acid dianhydride, perylenetetracarboxylic acid diimide and derivatives thereof.
[Claim 8]
A method for preparation of an organic thin film transistor comprising interposing an organic buffer layer between source/drain electrodes and an organic semiconductor layer, wherein the organic buffer layer is coated on at least one of the source electrode and the drain electrode by electrochemical coating.
[Claim 9]
An organic light-emitting display comprising the organic thin film transistor according to anyone of claims 1 to 7; and an organic light emitting device electrically connected to the organic thin film transistor.
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|---|---|---|---|
| KR1020070135486A KR101455600B1 (en) | 2007-12-21 | 2007-12-21 | Organic thin film transistor and method for preparing thereof |
| KR10-2007-0135486 | 2007-12-21 |
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| KR (1) | KR101455600B1 (en) |
| TW (1) | TWI450429B (en) |
| WO (1) | WO2009082129A2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2662945C1 (en) * | 2013-11-15 | 2018-07-31 | Эвоник Дегусса Гмбх | Thin film transistor with low contact resistance |
| CN112820779A (en) * | 2020-12-31 | 2021-05-18 | 上海应用技术大学 | Thin film transistor and preparation method thereof |
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| TWI647870B (en) * | 2017-11-29 | 2019-01-11 | 友達光電股份有限公司 | Organic thin film transistor and pixel structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050049837A (en) * | 2003-11-24 | 2005-05-27 | 삼성전자주식회사 | Organic thin film transistor containing buffer layer |
| KR20060049062A (en) * | 2004-08-04 | 2006-05-18 | 소니 가부시끼 가이샤 | Field-effect transistor |
| JP2007109876A (en) * | 2005-10-13 | 2007-04-26 | Toshiba Matsushita Display Technology Co Ltd | Thin film transistor and manufacturing method thereof |
| JP2007115986A (en) * | 2005-10-21 | 2007-05-10 | Sharp Corp | Thin film device and manufacturing method therefor |
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| KR100730157B1 (en) * | 2005-11-03 | 2007-06-19 | 삼성에스디아이 주식회사 | Organic thin film transistor and organic light emitting apparatus comprising the same |
-
2007
- 2007-12-21 KR KR1020070135486A patent/KR101455600B1/en not_active IP Right Cessation
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- 2008-12-18 TW TW097149387A patent/TWI450429B/en not_active IP Right Cessation
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050049837A (en) * | 2003-11-24 | 2005-05-27 | 삼성전자주식회사 | Organic thin film transistor containing buffer layer |
| KR20060049062A (en) * | 2004-08-04 | 2006-05-18 | 소니 가부시끼 가이샤 | Field-effect transistor |
| JP2007109876A (en) * | 2005-10-13 | 2007-04-26 | Toshiba Matsushita Display Technology Co Ltd | Thin film transistor and manufacturing method thereof |
| JP2007115986A (en) * | 2005-10-21 | 2007-05-10 | Sharp Corp | Thin film device and manufacturing method therefor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2662945C1 (en) * | 2013-11-15 | 2018-07-31 | Эвоник Дегусса Гмбх | Thin film transistor with low contact resistance |
| CN112820779A (en) * | 2020-12-31 | 2021-05-18 | 上海应用技术大学 | Thin film transistor and preparation method thereof |
Also Published As
| Publication number | Publication date |
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| KR20090067728A (en) | 2009-06-25 |
| TW200941784A (en) | 2009-10-01 |
| TWI450429B (en) | 2014-08-21 |
| WO2009082129A3 (en) | 2009-09-11 |
| KR101455600B1 (en) | 2014-11-03 |
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