WO2009082129A3 - Organic thin film transistor and method for preparing thereof - Google Patents

Organic thin film transistor and method for preparing thereof Download PDF

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Publication number
WO2009082129A3
WO2009082129A3 PCT/KR2008/007536 KR2008007536W WO2009082129A3 WO 2009082129 A3 WO2009082129 A3 WO 2009082129A3 KR 2008007536 W KR2008007536 W KR 2008007536W WO 2009082129 A3 WO2009082129 A3 WO 2009082129A3
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
film transistor
organic thin
preparing
organic
Prior art date
Application number
PCT/KR2008/007536
Other languages
French (fr)
Other versions
WO2009082129A2 (en
Inventor
Ho-Jin Lee
Byung-Uk Kim
We-Yong Kim
Dae-Jung Jeong
Dong-Hyuk Lee
Sang-Ook Kang
Moon-Pyo Hong
Original Assignee
Dongjin Semichem Co., Ltd.
Korea University Industrial & Academic Collaboration Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongjin Semichem Co., Ltd., Korea University Industrial & Academic Collaboration Foundation filed Critical Dongjin Semichem Co., Ltd.
Publication of WO2009082129A2 publication Critical patent/WO2009082129A2/en
Publication of WO2009082129A3 publication Critical patent/WO2009082129A3/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/125—Deposition of organic active material using liquid deposition, e.g. spin coating using electrolytic deposition e.g. in-situ electropolymerisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)

Abstract

The present invention relates to an organic thin film transistor and a method for preparation thereof. Particularly, the present invention relates to an organic thin film transistor which comprises an organic buffer layer formed between an organic semiconductor layer and source/drain electrodes by electrochemical coating, thus improving interfacial properties between the organic semiconductor layer and source/drain electrodes, and increasing capability of carrier injection from source/drain electrodes to organic semiconductor layer, thereby improving electrical performance of transistor, and a method for preparing the same.
PCT/KR2008/007536 2007-12-21 2008-12-19 Organic thin film transistor and method for preparing thereof WO2009082129A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020070135486A KR101455600B1 (en) 2007-12-21 2007-12-21 Organic thin film transistor and method for preparing thereof
KR10-2007-0135486 2007-12-21

Publications (2)

Publication Number Publication Date
WO2009082129A2 WO2009082129A2 (en) 2009-07-02
WO2009082129A3 true WO2009082129A3 (en) 2009-09-11

Family

ID=40801671

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/007536 WO2009082129A2 (en) 2007-12-21 2008-12-19 Organic thin film transistor and method for preparing thereof

Country Status (3)

Country Link
KR (1) KR101455600B1 (en)
TW (1) TWI450429B (en)
WO (1) WO2009082129A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2874187B1 (en) * 2013-11-15 2020-01-01 Evonik Operations GmbH Low contact resistance thin film transistor
TWI647870B (en) * 2017-11-29 2019-01-11 友達光電股份有限公司 Organic thin film transistor and pixel structure
CN112820779B (en) * 2020-12-31 2022-12-16 上海应用技术大学 Thin film transistor and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050049837A (en) * 2003-11-24 2005-05-27 삼성전자주식회사 Organic thin film transistor containing buffer layer
KR20060049062A (en) * 2004-08-04 2006-05-18 소니 가부시끼 가이샤 Field-effect transistor
JP2007109876A (en) * 2005-10-13 2007-04-26 Toshiba Matsushita Display Technology Co Ltd Thin film transistor and manufacturing method thereof
JP2007115986A (en) * 2005-10-21 2007-05-10 Sharp Corp Thin film device and manufacturing method therefor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100730157B1 (en) * 2005-11-03 2007-06-19 삼성에스디아이 주식회사 Organic thin film transistor and organic light emitting apparatus comprising the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050049837A (en) * 2003-11-24 2005-05-27 삼성전자주식회사 Organic thin film transistor containing buffer layer
KR20060049062A (en) * 2004-08-04 2006-05-18 소니 가부시끼 가이샤 Field-effect transistor
JP2007109876A (en) * 2005-10-13 2007-04-26 Toshiba Matsushita Display Technology Co Ltd Thin film transistor and manufacturing method thereof
JP2007115986A (en) * 2005-10-21 2007-05-10 Sharp Corp Thin film device and manufacturing method therefor

Also Published As

Publication number Publication date
TWI450429B (en) 2014-08-21
TW200941784A (en) 2009-10-01
KR20090067728A (en) 2009-06-25
KR101455600B1 (en) 2014-11-03
WO2009082129A2 (en) 2009-07-02

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