WO2009078310A1 - 熱処理装置及びその制御方法 - Google Patents

熱処理装置及びその制御方法 Download PDF

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Publication number
WO2009078310A1
WO2009078310A1 PCT/JP2008/072328 JP2008072328W WO2009078310A1 WO 2009078310 A1 WO2009078310 A1 WO 2009078310A1 JP 2008072328 W JP2008072328 W JP 2008072328W WO 2009078310 A1 WO2009078310 A1 WO 2009078310A1
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WO
WIPO (PCT)
Prior art keywords
treating container
gate valve
heat treatment
gas
temperature
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PCT/JP2008/072328
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English (en)
French (fr)
Inventor
Kei Ogose
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to CN200880100332XA priority Critical patent/CN102317501A/zh
Publication of WO2009078310A1 publication Critical patent/WO2009078310A1/ja
Priority to US12/814,547 priority patent/US20100248396A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any preceding group
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Especially adapted for treating semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
  • Muffle Furnaces And Rotary Kilns (AREA)
  • Furnace Details (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

　本発明は、一側の側壁に被処理体を搬出入させるために開閉可能になされたゲートバルブを有すると共に、天井側にシール部材を介して開閉可能になされた蓋部を有する処理容器と、前記処理容器内に設けられ、前記被処理体が載置される載置台と、前記処理容器内へガスを導入するガス導入手段と、前記処理容器内の雰囲気ガスを排気する排気手段と、前記被処理体を加熱する被処理体用加熱手段と、前記ゲートバルブに設けられたゲートバルブ加熱手段と、前記処理容器の側壁に設けられた処理容器加熱手段と、前記処理容器加熱手段を制御して、前記処理容器の前記ゲートバルブ側の側壁の設定温度よりも前記ゲートバルブとは反対側の側壁の設定温度の方を高くする温度制御部と、を備え、前記２つの設定温度は、いずれも、前記熱処理によって発生する反応副生成物の昇華温度以上、あるいは、前記ガスの凝縮付着温度以上であって、且つ、前記シール部材の透過ガスが増加する温度以下になっていることを特徴とする熱処理装置である。
PCT/JP2008/072328 2007-12-15 2008-12-09 熱処理装置及びその制御方法 WO2009078310A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN200880100332XA CN102317501A (zh) 2007-12-15 2008-12-09 热处理装置及其控制方法
US12/814,547 US20100248396A1 (en) 2007-12-15 2010-06-14 Heat treatment apparatus and control method therefor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007324097A JP2009144211A (ja) 2007-12-15 2007-12-15 処理装置、その使用方法及び記憶媒体
JP2007-324097 2007-12-15

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/814,547 Continuation US20100248396A1 (en) 2007-12-15 2010-06-14 Heat treatment apparatus and control method therefor

Publications (1)

Publication Number Publication Date
WO2009078310A1 true WO2009078310A1 (ja) 2009-06-25

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PCT/JP2008/072328 WO2009078310A1 (ja) 2007-12-15 2008-12-09 熱処理装置及びその制御方法

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Country Link
US (1) US20100248396A1 (ja)
JP (1) JP2009144211A (ja)
KR (1) KR20100110822A (ja)
CN (1) CN102317501A (ja)
TW (1) TW200937561A (ja)
WO (1) WO2009078310A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019058421A1 (ja) * 2017-09-19 2019-03-28 株式会社アスペクト 粉末床溶融結合装置
CN112663026A (zh) * 2020-11-25 2021-04-16 北京北方华创微电子装备有限公司 工艺腔室、半导体工艺设备及加热控制方法
JP7444890B2 (ja) 2019-01-04 2024-03-06 アクセリス テクノロジーズ， インコーポレイテッド 半導体処理装置のための加熱チャンバーハウジングを介したチャンバ壁上での凝縮ガスの低減

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US9653267B2 (en) * 2011-10-06 2017-05-16 Applied Materials, Inc. Temperature controlled chamber liner
KR101452828B1 (ko) * 2012-08-28 2014-10-23 주식회사 유진테크 기판처리장치
KR101460057B1 (ko) * 2013-01-25 2014-11-11 주식회사 나노솔루션테크 웨이퍼 본더
JP6240440B2 (ja) * 2013-08-30 2017-11-29 東京応化工業株式会社 チャンバー装置及び加熱方法
KR102194898B1 (ko) * 2013-09-09 2020-12-28 주식회사 나래나노텍 기판 열처리 챔버에 사용되는 도어, 및 이를 구비한 기판 열처리 챔버 및 기판 열처리 장치
CN105200396A (zh) * 2014-06-18 2015-12-30 中微半导体设备(上海)有限公司 一种mocvd设备及其中寄生颗粒的清除方法
JP6478872B2 (ja) * 2015-08-21 2019-03-06 東京エレクトロン株式会社 成膜装置
JP6556802B2 (ja) * 2017-10-13 2019-08-07 キヤノントッキ株式会社 真空装置、蒸着装置及びゲートバルブ
JP7281968B2 (ja) * 2019-05-30 2023-05-26 東京エレクトロン株式会社 アリ溝加工方法及び基板処理装置
KR102239116B1 (ko) * 2019-08-07 2021-04-09 세메스 주식회사 기판처리장치
JP7418301B2 (ja) 2020-01-07 2024-01-19 東京エレクトロン株式会社 水蒸気処理装置と水蒸気処理方法、基板処理システム、及びドライエッチング方法
CN115142046B (zh) * 2021-03-31 2024-03-12 中微半导体设备(上海)股份有限公司 基片承载组件、化学气相沉积设备及吹扫方法
KR20240001171A (ko) 2021-04-26 2024-01-03 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07147242A (ja) * 1993-11-24 1995-06-06 Fuji Electric Co Ltd 薄膜光電変換素子の製造装置
JPH0874048A (ja) * 1994-08-31 1996-03-19 Fujitsu Ltd スパッタ装置
JP2001004505A (ja) * 1999-06-22 2001-01-12 Sumitomo Metal Ind Ltd ゲートバルブ，それを備える試料処理装置及び試料処理方法
JP2002343779A (ja) * 2001-05-18 2002-11-29 Tokyo Electron Ltd 熱処理装置
JP2003133242A (ja) * 2000-12-28 2003-05-09 Tokyo Electron Ltd 基板加熱装置およびそのパージ方法
JP2004047644A (ja) * 2002-07-10 2004-02-12 Tokyo Electron Ltd 成膜方法及び成膜装置
JP2007201422A (ja) * 2005-12-28 2007-08-09 Tokyo Electron Ltd 成膜方法及び成膜装置並びに記憶媒体

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07147242A (ja) * 1993-11-24 1995-06-06 Fuji Electric Co Ltd 薄膜光電変換素子の製造装置
JPH0874048A (ja) * 1994-08-31 1996-03-19 Fujitsu Ltd スパッタ装置
JP2001004505A (ja) * 1999-06-22 2001-01-12 Sumitomo Metal Ind Ltd ゲートバルブ，それを備える試料処理装置及び試料処理方法
JP2003133242A (ja) * 2000-12-28 2003-05-09 Tokyo Electron Ltd 基板加熱装置およびそのパージ方法
JP2002343779A (ja) * 2001-05-18 2002-11-29 Tokyo Electron Ltd 熱処理装置
JP2004047644A (ja) * 2002-07-10 2004-02-12 Tokyo Electron Ltd 成膜方法及び成膜装置
JP2007201422A (ja) * 2005-12-28 2007-08-09 Tokyo Electron Ltd 成膜方法及び成膜装置並びに記憶媒体

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019058421A1 (ja) * 2017-09-19 2019-03-28 株式会社アスペクト 粉末床溶融結合装置
JPWO2019058421A1 (ja) * 2017-09-19 2020-10-15 株式会社アスペクト 粉末床溶融結合装置
JP7444890B2 (ja) 2019-01-04 2024-03-06 アクセリス テクノロジーズ， インコーポレイテッド 半導体処理装置のための加熱チャンバーハウジングを介したチャンバ壁上での凝縮ガスの低減
CN112663026A (zh) * 2020-11-25 2021-04-16 北京北方华创微电子装备有限公司 工艺腔室、半导体工艺设备及加热控制方法
CN112663026B (zh) * 2020-11-25 2022-10-21 北京北方华创微电子装备有限公司 工艺腔室、半导体工艺设备及加热控制方法

Also Published As

Publication number Publication date
JP2009144211A (ja) 2009-07-02
CN102317501A (zh) 2012-01-11
TW200937561A (en) 2009-09-01
US20100248396A1 (en) 2010-09-30
KR20100110822A (ko) 2010-10-13

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