WO2009069670A1 - 微小構造体検査装置および微小構造体検査方法 - Google Patents

微小構造体検査装置および微小構造体検査方法 Download PDF

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Publication number
WO2009069670A1
WO2009069670A1 PCT/JP2008/071471 JP2008071471W WO2009069670A1 WO 2009069670 A1 WO2009069670 A1 WO 2009069670A1 JP 2008071471 W JP2008071471 W JP 2008071471W WO 2009069670 A1 WO2009069670 A1 WO 2009069670A1
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WIPO (PCT)
Prior art keywords
wave generating
microstructure
moving portion
insulating layer
generating device
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PCT/JP2008/071471
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English (en)
French (fr)
Inventor
Masato Hayashi
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Tokyo Electron Limited
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Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to CN200880117854A priority Critical patent/CN101874203A/zh
Priority to JP2009543832A priority patent/JPWO2009069670A1/ja
Priority to US12/744,873 priority patent/US8333114B2/en
Priority to EP08854451A priority patent/EP2221614A1/en
Publication of WO2009069670A1 publication Critical patent/WO2009069670A1/ja

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/04Analysing solids
    • G01N29/12Analysing solids by measuring frequency or resonance of acoustic waves
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/14Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object using acoustic emission techniques

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  • Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Acoustics & Sound (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Micromachines (AREA)

Abstract

 微小構造体の可動部の減衰特性値を測定する微小構造体検査装置(10)であって、微小構造体に直に接触せずに可動部に衝撃を与える圧力波発生装置(1)およびパルス発生装置(2)と、可動部に接触することなく、可動部が自由振動を開始してから所定の時間の間に可動部の変位を測定する変位計(4)と、を備える。圧力波発生装置(1)は、熱励起式の音波発生素子、圧電式の音波発生素子または電磁式の振動素子から構成され、パルス発生装置(2)のパルス信号で駆動される。好ましくは、熱励起式の音波発生素子を用いた圧力波発生装置(1)は、熱伝導性の基板と、基板の一方の主面にナノ結晶シリコンで形成された断熱層と、断熱層の上に形成された絶縁体層と、絶縁体層の上に形成され、交流成分を含む電流が印加されて発熱する導体層と、から構成される。
PCT/JP2008/071471 2007-11-26 2008-11-26 微小構造体検査装置および微小構造体検査方法 WO2009069670A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN200880117854A CN101874203A (zh) 2007-11-26 2008-11-26 微细结构体检测装置以及微细结构体检测方法
JP2009543832A JPWO2009069670A1 (ja) 2007-11-26 2008-11-26 微小構造体検査装置および微小構造体検査方法
US12/744,873 US8333114B2 (en) 2007-11-26 2008-11-26 Microstructure inspecting device, and microstructure inspecting method
EP08854451A EP2221614A1 (en) 2007-11-26 2008-11-26 Microstructure inspecting device, and microstructure inspecting method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-304597 2007-11-26
JP2007304597 2007-11-26

Publications (1)

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WO2009069670A1 true WO2009069670A1 (ja) 2009-06-04

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PCT/JP2008/071471 WO2009069670A1 (ja) 2007-11-26 2008-11-26 微小構造体検査装置および微小構造体検査方法

Country Status (6)

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US (1) US8333114B2 (ja)
EP (1) EP2221614A1 (ja)
JP (1) JPWO2009069670A1 (ja)
KR (1) KR20100095560A (ja)
CN (2) CN102654481A (ja)
WO (1) WO2009069670A1 (ja)

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JP2012531589A (ja) * 2009-06-23 2012-12-10 エクソンモービル リサーチ アンド エンジニアリング カンパニー 機械発振器の共振パラメータの特定
JP2013537981A (ja) * 2010-09-24 2013-10-07 ラッシーニ フレノス ソシエダ アノニマ デ カピタル ヴァリアブレ 光学撮像技術を用いたダンピングの測定方法
WO2015111603A1 (ja) * 2014-01-24 2015-07-30 国立大学法人東京大学 超音波発生素子
JP2017019017A (ja) * 2010-07-14 2017-01-26 デュケーン・コーポレーション 振動溶接システム
JP2018503070A (ja) * 2014-12-26 2018-02-01 アクセリス テクノロジーズ, インコーポレイテッド 振動特性または音響特性の解析に基づくウェハのクランプ検出
US9897518B2 (en) 2012-04-23 2018-02-20 Rassini Frenos, S.A. De C.V. Method and apparatus for measuring damping in a workpiece
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
US11699572B2 (en) 2019-01-22 2023-07-11 Applied Materials, Inc. Feedback loop for controlling a pulsed voltage waveform
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11848176B2 (en) 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power
US11887813B2 (en) 2021-06-23 2024-01-30 Applied Materials, Inc. Pulsed voltage source for plasma processing
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications

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JP6079776B2 (ja) * 2012-06-06 2017-02-15 日本電気株式会社 構造物の分析装置および構造物の分析方法
CN105352690B (zh) * 2015-11-26 2018-01-23 清华大学 医疗器械在磁场中的振动测量方法
US10134649B2 (en) 2016-01-06 2018-11-20 International Business Machines Corporation Scanning acoustic microscope sensor array for chip-packaging interaction package reliability monitoring
WO2018235195A1 (ja) * 2017-06-21 2018-12-27 株式会社東芝 構造物評価システム及び構造物評価方法
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
CN109668666A (zh) * 2019-01-21 2019-04-23 河南翔宇医疗设备股份有限公司 一种用于检测体外冲击波能量密度的测试设备及方法
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US20220399185A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
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Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012531589A (ja) * 2009-06-23 2012-12-10 エクソンモービル リサーチ アンド エンジニアリング カンパニー 機械発振器の共振パラメータの特定
US9548141B2 (en) * 2009-09-14 2017-01-17 Dexerials Corporation Light-reflective anisotropic conductive adhesive and light-emitting device
US20120193666A1 (en) * 2009-09-14 2012-08-02 Sony Chemical & Information Device Corporation Light-reflective anisotropic conductive adhesive and light-emitting device
JP2017019017A (ja) * 2010-07-14 2017-01-26 デュケーン・コーポレーション 振動溶接システム
US10101252B2 (en) 2010-09-24 2018-10-16 Rassini Frenos, S.A. De C.V. Method of measuring damping using optical imaging technique
JP2013537981A (ja) * 2010-09-24 2013-10-07 ラッシーニ フレノス ソシエダ アノニマ デ カピタル ヴァリアブレ 光学撮像技術を用いたダンピングの測定方法
US9897518B2 (en) 2012-04-23 2018-02-20 Rassini Frenos, S.A. De C.V. Method and apparatus for measuring damping in a workpiece
WO2015111603A1 (ja) * 2014-01-24 2015-07-30 国立大学法人東京大学 超音波発生素子
JP2018503070A (ja) * 2014-12-26 2018-02-01 アクセリス テクノロジーズ, インコーポレイテッド 振動特性または音響特性の解析に基づくウェハのクランプ検出
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
US11699572B2 (en) 2019-01-22 2023-07-11 Applied Materials, Inc. Feedback loop for controlling a pulsed voltage waveform
US11848176B2 (en) 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US11887813B2 (en) 2021-06-23 2024-01-30 Applied Materials, Inc. Pulsed voltage source for plasma processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications

Also Published As

Publication number Publication date
CN102654481A (zh) 2012-09-05
EP2221614A1 (en) 2010-08-25
KR20100095560A (ko) 2010-08-31
US8333114B2 (en) 2012-12-18
US20100307248A1 (en) 2010-12-09
CN101874203A (zh) 2010-10-27
JPWO2009069670A1 (ja) 2011-04-14

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