WO2009005087A1 - シリコンウェーハ中に存在する原子空孔の定量評価装置、その方法、シリコンウェーハの製造方法、及び薄膜振動子 - Google Patents

シリコンウェーハ中に存在する原子空孔の定量評価装置、その方法、シリコンウェーハの製造方法、及び薄膜振動子 Download PDF

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Publication number
WO2009005087A1
WO2009005087A1 PCT/JP2008/061987 JP2008061987W WO2009005087A1 WO 2009005087 A1 WO2009005087 A1 WO 2009005087A1 JP 2008061987 W JP2008061987 W JP 2008061987W WO 2009005087 A1 WO2009005087 A1 WO 2009005087A1
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WO
WIPO (PCT)
Prior art keywords
silicon wafer
quantitative evaluation
thin
silicon
evaluation device
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PCT/JP2008/061987
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English (en)
French (fr)
Inventor
Terutaka Goto
Hiroshi Kaneta
Yuichi Nemoto
Original Assignee
Niigata University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Niigata University filed Critical Niigata University
Priority to EP08777787.6A priority Critical patent/EP2169712A4/en
Priority to US12/666,869 priority patent/US8215175B2/en
Publication of WO2009005087A1 publication Critical patent/WO2009005087A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/04—Analysing solids
    • G01N29/07—Analysing solids by measuring propagation velocity or propagation time of acoustic waves
    • G01N29/075—Analysing solids by measuring propagation velocity or propagation time of acoustic waves by measuring or comparing phase angle
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/02—Indexing codes associated with the analysed material
    • G01N2291/028—Material parameters
    • G01N2291/02827—Elastic parameters, strength or force
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/02—Indexing codes associated with the analysed material
    • G01N2291/028—Material parameters
    • G01N2291/0289—Internal structure, e.g. defects, grain size, texture

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Acoustics & Sound (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)

Abstract

効率的にシリコンウェーハ中に存在する原子空孔の定量評価を行うことができる原子空孔の定量評価装置及び定量評価方法を提供する。 定量評価装置１は、超音波発振部27と超音波受信部28とを有する検出手段５と、完全結晶シリコンで構成されたシリコンウェーハ26に前記超音波発振部27と前記超音波受信部28とを形成したシリコン試料６と、前記シリコン試料６に対し外部磁場を印加する磁力発生手段４と、前記シリコン試料６を５０Ｋ以下の温度域に冷却・制御可能な冷却手段３とを備える。前記超音波発振部27と超音波受信部28とは、前記温度域で温度降下に伴うシリコンウェーハ26の膨張に追随できる物性をもち、電場を印加したまま温度を下げると分子軸が電場方向に配向される高分子材料で形成した薄膜振動子31と、前記薄膜振動子31に電場を印加する電極32,33とを有するトランスデューサ30を備える。
PCT/JP2008/061987 2007-07-03 2008-07-02 シリコンウェーハ中に存在する原子空孔の定量評価装置、その方法、シリコンウェーハの製造方法、及び薄膜振動子 WO2009005087A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP08777787.6A EP2169712A4 (en) 2007-07-03 2008-07-02 QUANTITATIVE EVALUATION DEVICE FOR ATOMIC GAPS EXISTING IN A SILICON WAFER, METHOD FOR THE DEVICE, METHOD FOR MANUFACTURING SILICON WAFER, AND THIN FILM OSCILLATOR
US12/666,869 US8215175B2 (en) 2007-07-03 2008-07-02 Quantitative evaluation device of atomic vacancies existing in silicon wafer, method for the device, silicon wafer manufacturing method, and thin-film oscillator

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007175679 2007-07-03
JP2007-175679 2007-07-03
JP2008093276A JP5276347B2 (ja) 2007-07-03 2008-03-31 シリコンウェーハ中に存在する原子空孔の定量評価装置、その方法、シリコンウェーハの製造方法、及び薄膜振動子
JP2008-093276 2008-03-31

Publications (1)

Publication Number Publication Date
WO2009005087A1 true WO2009005087A1 (ja) 2009-01-08

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PCT/JP2008/061987 WO2009005087A1 (ja) 2007-07-03 2008-07-02 シリコンウェーハ中に存在する原子空孔の定量評価装置、その方法、シリコンウェーハの製造方法、及び薄膜振動子

Country Status (5)

Country Link
US (1) US8215175B2 (ja)
EP (1) EP2169712A4 (ja)
JP (1) JP5276347B2 (ja)
KR (1) KR20100040891A (ja)
WO (1) WO2009005087A1 (ja)

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EP1992942B1 (en) * 2006-03-03 2017-12-13 Niigata University Quantitative evaluation device and method of atom vacancy existing in silicon wafer
KR101678872B1 (ko) * 2009-09-07 2016-11-23 고쿠리츠다이가쿠호진 니이가타 다이가쿠 실리콘 웨이퍼 중에 존재하는 원자 공공 농도의 정량 평가 방법, 실리콘 웨이퍼의 제조 방법, 및 이 제조 방법에 의해 제조된 실리콘 웨이퍼
WO2013074422A1 (en) 2011-11-17 2013-05-23 Transense Technologies Plc Quartz Substrate Orientations for Compact Monolithic Differential Temperature Sensor, and Sensors Using Same
JP6244833B2 (ja) * 2013-01-31 2017-12-13 国立大学法人 新潟大学 シリコンウェーハ中の原子空孔濃度の絶対値の決定方法
JP6211955B2 (ja) * 2014-03-07 2017-10-11 東芝メモリ株式会社 半導体製造装置及び半導体製造方法
KR102609862B1 (ko) 2014-04-17 2023-12-04 펨토매트릭스, 인코포레이티드. 웨이퍼 계측 기술들
WO2016077617A1 (en) 2014-11-12 2016-05-19 Femtometrix, Inc. Systems for parsing material properties from within shg signals
US10516375B2 (en) 2015-02-06 2019-12-24 University Of Massachusetts Squid-based traveling wave parametric amplifier
US9828672B2 (en) 2015-03-26 2017-11-28 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
US10400323B2 (en) * 2016-11-04 2019-09-03 Lam Research Corporation Ultra-low defect part process
CN111448640A (zh) 2017-12-07 2020-07-24 朗姆研究公司 在室调节中的抗氧化保护层
US10760158B2 (en) 2017-12-15 2020-09-01 Lam Research Corporation Ex situ coating of chamber components for semiconductor processing
KR20210021308A (ko) 2018-05-15 2021-02-25 펨토매트릭스, 인코포레이티드. 제2고조파 발생(ｓｈｇ) 광학 검사 시스템 설계

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WO2003078889A1 (fr) * 2002-03-18 2003-09-25 Japan Science And Technology Agency Element photo-emetteur, afficheur, et sonde de contrainte

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TERUTAKA GOTO; HIROSHI YAMADA-KANETA; YASUHIRO SAITO; YUICHI NEMOTO; KOJI SATO; KOICHI KAKIMOTO; SHINTARO NAKAMURA, MATERIALS SCIENCE AND ENGINEERING B, vol. 134, 2006, pages 233 - 239
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Also Published As

Publication number Publication date
KR20100040891A (ko) 2010-04-21
JP5276347B2 (ja) 2013-08-28
EP2169712A1 (en) 2010-03-31
US20100186512A1 (en) 2010-07-29
JP2009033102A (ja) 2009-02-12
EP2169712A4 (en) 2014-04-16
US8215175B2 (en) 2012-07-10

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