WO2009066398A1 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- WO2009066398A1 WO2009066398A1 PCT/JP2007/073001 JP2007073001W WO2009066398A1 WO 2009066398 A1 WO2009066398 A1 WO 2009066398A1 JP 2007073001 W JP2007073001 W JP 2007073001W WO 2009066398 A1 WO2009066398 A1 WO 2009066398A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- resin
- led
- light
- sealing resin
- solid transparent
- Prior art date
Links
- 229920005989 resin Polymers 0.000 claims abstract description 112
- 239000011347 resin Substances 0.000 claims abstract description 112
- 239000007787 solid Substances 0.000 claims abstract description 35
- 230000005484 gravity Effects 0.000 claims abstract description 12
- 239000007788 liquid Substances 0.000 claims abstract description 8
- 238000007789 sealing Methods 0.000 claims description 56
- 238000000605 extraction Methods 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 11
- 239000000203 mixture Substances 0.000 abstract description 5
- 238000002347 injection Methods 0.000 abstract description 3
- 239000007924 injection Substances 0.000 abstract description 3
- 238000002156 mixing Methods 0.000 abstract description 3
- 238000005286 illumination Methods 0.000 abstract description 2
- 239000004033 plastic Substances 0.000 description 13
- 229920002050 silicone resin Polymers 0.000 description 9
- 239000002245 particle Substances 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000007767 bonding agent Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- -1 polypropylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
Definitions
- the present invention relates to a light emitting device used for a light emitting diode display device, an LCD backlight light source, illumination, and the like, and more particularly to a structure for improving the light extraction efficiency of a light emitting device such as a resin sealed light emitting diode.
- FIG. 1 shows typical structures of display devices, LCD backlights, and LEDs for lighting, among light-emitting diodes (hereinafter referred to as LEDs) and organic and inorganic EL.
- LEDs light-emitting diodes
- FIG. 1 shows typical structures of display devices, LCD backlights, and LEDs for lighting, among light-emitting diodes (hereinafter referred to as LEDs) and organic and inorganic EL.
- the LED chip 2 is placed in a housing package having a reflective case 1 made of plastic or ceramic and has a high anti-emissivity, and after die bonding using silver paste or silicone resin die bond agent 4 on the external metal electrode 5. Then, the positive and negative electrodes of the LED chip are bonded to each external electrode with wires 6, and liquid sealing resin 3 is injected using a dispenser, and the sealing resin is cured.
- the LED chip uses a single color such as RGB, a combination of these, or other light emitting colors including yellow.
- the LED chip shown in Fig. 1 has electrodes only on the front surface, and bonding is performed with two wires, while those with electrodes on the front and back surfaces of the LED chip are bonded with one wire.
- the wire is a gold wire or aluminum wire with a diameter of 25 to 30 / x m
- the sealing resin is an epoxy resin or a silicone resin.
- the reflective case is made of PPA for plastic and AI2O3 for ceramic.
- the refractive index of silicone resin or epoxy resin for the sealing resin is about 1.5
- the light emitted from the LED chip is separated from the sealing resin. All the light reflected and emitted from the air interface cannot be taken out.
- the light 8 emitted from the LED chip 2 is reflected by the reflecting case 1, and the light 8 incident at an angle 9 of 41.8 degrees or more with respect to the vertical direction of the sealing resin surface is This is because it is totally reflected on the surface of the sealing resin and cannot be taken out to the outside.
- the LED light extraction efficiency using the slim package which is often used for LCD backlights, etc., whose LED basic structure is the same as that shown in Fig. 1, is low.
- SPKG slim package
- the optical output is the same as that of the light extraction side using the TO-18 package shown in Fig. 2 using the same chip.
- the stop resin shape is a convex lens shape, which is 50 to 60% of the light output of the LED. For this reason, in order to improve the light extraction efficiency, it has been conventionally practiced to provide an uneven light scattering portion on the LED light emitting sealing resin surface.
- the method of mechanically roughing the LED sealing resin surface, the method of resin sealing the LED chip with a mold with a rough surface, or sealing the LED chip A method of making the surface of the sealing resin composition an etching rough surface with a solution in which the filler is dissolved after curing a sealing resin composition in which a powder filler is mixed with a transparent sealing resin.
- JP-A-56-019686 discloses Japanese Laid-Open Patent Publication No. 2002-368289 discloses a method for forming a fine uneven surface on the surface of an LED sealing resin by laser ablation, and a resin film having an additional uneven surface formed on the surface of an LED sealing resin.
- Japanese Patent Laid-Open No. 2003-234509 discloses a method for doing this.
- the unevenness on the surface of the sealing resin is created by a simpler process rather than a complicated process.
- the LED of the present invention has a convex solid transparent resin protrusion formed on the surface of the sealing resin, the light extraction efficiency is improved, the luminance is improved, the light is scattered at a wide angle, and the light emission varies depending on the viewing angle. There is an advantage that light can be emitted uniformly in all directions.
- Fig. 1 is a schematic cross-sectional view showing the structure of a conventional LED.
- Figure 2 is a schematic cross-sectional view when assembled in a TO-18 package.
- FIG. 3 is a schematic cross-sectional view showing the structure of the LED of the present invention.
- FIG. 4 is a diagram showing that light is totally reflected on the surface of the sealing resin.
- FIG. 5 is an enlarged structural plan view showing the relationship between the sealing resin and the solid transparent resin, which is a feature of the LED of the present invention.
- FIG. 6 is a sectional view of the structure when the sealing resin is injected into the housing package in two stages.
- Fig. 7 is a diagram of the resin being hardened downward when the specific gravity of the solid transparent resin is larger than that of the liquid sealing resin.
- Fig. 3 shows a schematic cross-sectional view of the structure of the LED of the present invention.
- a solid transparent resin 7 having a specific gravity different from that of the sealing resin 3 is mixed in a liquid sealing resin, and the LED chip 2 is injected into a housing package having a reflective case 1 bonded with a die bond and a wire bond.
- a part of the transparent resin 7 appears on the surface of the encapsulating resin and then cured to produce an LED having a solid transparent resin protrusion formed in a convex shape on the encapsulating resin surface.
- the solid transparent resin 7 exists so as to overlap non-uniformly near the surface of the sealing resin 3. This has the advantage that the light extraction efficiency is improved and the light is scattered at a wide angle, so that the light emission does not vary depending on the viewing angle, and the light is emitted uniformly in all directions.
- the liquid sealing resin a silicone resin or an epoxy resin which is usually used as a sealing resin can be used.
- the sealing resin and the solid transparent resin may have different specific gravities, but in order to shorten the time for the solid transparent resin to move to the surface of the sealing resin after injecting the mixture of the two into the housing package, the sealing resin
- the specific gravity difference between the solid transparent resin and the solid transparent resin is preferably 50 kg-no m 3 or more.
- plastic particles (Sekisui Chemical's Micropearl SP), polycarbonate, polypropylene, and epoxy particles mainly composed of dibulene benzene are used.
- the average particle size of the solid transparent resin is preferably 5 to 80 ⁇ . When the average particle size is less than 5 / m, the time for the solid transparent resin to appear on the surface of the sealing resin becomes longer, and it tends to aggregate. If it is larger than 8 ⁇ ⁇ , the state of solid transparent resin appearing on the surface of the sealing resin is not stable.
- the particle size distribution of the solid transparent resin is preferably narrow so that the solid transparent resin exists uniformly on the surface of the sealing resin.
- the mixing amount of the solid transparent resin is preferably 1 to 20% by weight from the viewpoint of the viscosity of the mixture and the light extraction efficiency. If it is less than 1% by weight, the light extraction efficiency is reduced, and if it is 20% by weight or more, the viscosity of the mixture increases and the time for the solid transparent resin to appear on the surface of the sealing resin is prolonged.
- the solid transparent resin When the specific gravity of the solid transparent resin is smaller than that of the encapsulating resin, the solid transparent resin floats on the encapsulating resin surface, and a part of the solid transparent resin appears on the encapsulating resin surface to show a convex shape. If the specific gravity of the solid transparent resin is greater than that of the sealing resin, the sealing resin surface in the housing package having the reflective case is directed in the direction of gravity before the sealing resin is cured. Make transparent resin convex it can. This state is shown as a schematic cross-sectional view in FIG. If the particle size of the solid transparent resin is large, it is preferable to place the coating with the release agent on the resin surface and turn the housing package upside down.
- the sealing resin may be injected into the housing package having the reflective case in two stages. First, only the sealing resin is injected to the middle of the package depth, and then a sealing resin mixed with a solid transparent resin is injected. At the same time as the time that the solid transparent resin appears on the surface of the sealing resin can be shortened, the solid transparent resin 7 is more uniformly present on the surface of the sealing resin 3 as shown in FIG. Can be big.
- LED elements of other colors including blue and white, or a combination of these LEDs such as RGB can be used.
- the sapphire substrate is polished to a thickness of about 100 / m, The wafer is cut by the scribing method and the size is 0.3 5 mmx0.
- a blue LED chip of 5 mm was created. Next, a blue LED chip was die-bonded with a silicone resin die-bonding agent and cured in a package on a lead frame on which a number of packages with reflection cases formed by injection molding were mounted. After that, wire bonds on the anode and cathode sides were made with a gold wire with a diameter of 25 ⁇ m.
- SRC1011 made by Shin-Etsu Silicone was used as the silicone resin for the sealing resin.
- the specific gravity of this resin is 1. lx l 0 3 Kg / m 3 .
- Sekisui Chemical's Micropearl SP was used as a solid transparent resin plastic ball.
- the diameter of the plastic ball is about 3 0 / xm, specific gravity: 1. a 1 9x 1 0 SKgZm 3.
- the light output of the LED produced in this way was 20% higher than the light output of the LED without plastic balls.
- Example 1 except that 3% by weight of plastic balls with a particle size of 10 ⁇ are used, the LED light output without using the plastic ball is the same as in Example 1 and the LED light output is measured. It was improved by 15%.
- a wafer with a light-emitting structure with a light-emitting layer of InGaN and a dominant wavelength of 46 Onm is formed on a C-plane sapphire substrate by MOCVD epitaxial growth, and then the sapphire substrate is polished to a thickness of about 100 ⁇ and scribed.
- the wafer was cut by this method to create a blue LED chip with a size of 0.35 mm x 0.35 mm.
- Color The LED chip was cured by die bonding with a silicone resin die bonding agent. After that, wire bonding was performed on the anode side and the force sword side with a gold wire with a diameter of 25 ⁇ .
- the opening size of the housing package that is, the upper end size of the reflection case is 0.7 mm x 0.7 mm.
- the plastic ball shown in Example 1 was used as a solid transparent resin, and a jig capable of thinly spraying it to a size of 0.7 mm ⁇ O. 7 mm was prepared in advance.
- the silicone resin shown in Example 1 was used as the sealing resin, and was injected into the housing package with a quantitative dispenser. After the resin was injected, the lead frame was turned upside down, and it was hardened together with the opening of the housing package and the jig with the plastic balls prepared earlier. The plastic ball was transferred to the sealing resin side.
- the light output of the LED thus created was 25% higher than the light output of the LED that does not use plastic balls.
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2007/073001 WO2009066398A1 (ja) | 2007-11-21 | 2007-11-21 | 発光装置 |
US12/744,234 US7897989B2 (en) | 2007-11-21 | 2007-11-21 | Light emitter |
JP2008504563A JP4167717B1 (ja) | 2007-11-21 | 2007-11-21 | 発光装置及びその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2007/073001 WO2009066398A1 (ja) | 2007-11-21 | 2007-11-21 | 発光装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009066398A1 true WO2009066398A1 (ja) | 2009-05-28 |
Family
ID=39985852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/073001 WO2009066398A1 (ja) | 2007-11-21 | 2007-11-21 | 発光装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7897989B2 (ja) |
JP (1) | JP4167717B1 (ja) |
WO (1) | WO2009066398A1 (ja) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2015111626A (ja) * | 2013-12-06 | 2015-06-18 | シャープ株式会社 | 発光装置およびその製造方法 |
JP2017135004A (ja) * | 2016-01-28 | 2017-08-03 | 日亜化学工業株式会社 | 照明装置 |
JP2017216369A (ja) * | 2016-05-31 | 2017-12-07 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP2019004191A (ja) * | 2018-10-11 | 2019-01-10 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP2019016820A (ja) * | 2010-12-28 | 2019-01-31 | 日亜化学工業株式会社 | 発光装置 |
JP2019134048A (ja) * | 2018-01-31 | 2019-08-08 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
US10454007B2 (en) | 2017-06-12 | 2019-10-22 | Nichia Corporation | Light-emitting device and method for manufacturing same |
JP2022513293A (ja) * | 2018-12-17 | 2022-02-07 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス照明装置および製造方法 |
US11355681B2 (en) | 2018-01-31 | 2022-06-07 | Nichia Corporation | Light emitting device and method of manufacturing same |
US11355678B2 (en) | 2018-01-31 | 2022-06-07 | Nichia Corporation | Light-emitting device and method of manufacturing the same |
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JP2008054029A (ja) | 2006-08-24 | 2008-03-06 | Toshiba Tec Corp | 無線通信システム |
KR101438826B1 (ko) * | 2008-06-23 | 2014-09-05 | 엘지이노텍 주식회사 | 발광장치 |
JP2010219163A (ja) * | 2009-03-13 | 2010-09-30 | Koito Mfg Co Ltd | 発光モジュール、および灯具ユニット |
JP5010693B2 (ja) * | 2010-01-29 | 2012-08-29 | 株式会社東芝 | Ledパッケージ |
JP5864089B2 (ja) | 2010-08-25 | 2016-02-17 | 日亜化学工業株式会社 | 発光装置の製造方法 |
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KR20120131712A (ko) * | 2011-05-26 | 2012-12-05 | 엘지이노텍 주식회사 | 발광소자 패키지 |
WO2012169147A1 (ja) * | 2011-06-07 | 2012-12-13 | パナソニック株式会社 | 光半導体パッケージおよびその製造方法 |
TWI556473B (zh) * | 2011-11-28 | 2016-11-01 | 隆達電子股份有限公司 | 發光二極體封裝及製作發光二極體封裝之方法 |
KR20130120615A (ko) * | 2012-04-26 | 2013-11-05 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
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JP2019016820A (ja) * | 2010-12-28 | 2019-01-31 | 日亜化学工業株式会社 | 発光装置 |
JP2015111626A (ja) * | 2013-12-06 | 2015-06-18 | シャープ株式会社 | 発光装置およびその製造方法 |
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US10141488B2 (en) | 2016-01-28 | 2018-11-27 | Nichia Corporation | Lighting device |
JP2017216369A (ja) * | 2016-05-31 | 2017-12-07 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
KR20170135689A (ko) * | 2016-05-31 | 2017-12-08 | 니치아 카가쿠 고교 가부시키가이샤 | 발광 장치 및 그 제조 방법 |
KR102306760B1 (ko) | 2016-05-31 | 2021-09-28 | 니치아 카가쿠 고교 가부시키가이샤 | 발광 장치 및 그 제조 방법 |
US10454007B2 (en) | 2017-06-12 | 2019-10-22 | Nichia Corporation | Light-emitting device and method for manufacturing same |
JP2019134048A (ja) * | 2018-01-31 | 2019-08-08 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
US10964859B2 (en) | 2018-01-31 | 2021-03-30 | Nichia Corporation | Light-emitting device and method of manufacturing the same |
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US11621379B2 (en) | 2018-01-31 | 2023-04-04 | Nichia Corporation | Light-emitting device and method of manufacturing the same |
JP2019004191A (ja) * | 2018-10-11 | 2019-01-10 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP2022513293A (ja) * | 2018-12-17 | 2022-02-07 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス照明装置および製造方法 |
JP7259038B2 (ja) | 2018-12-17 | 2023-04-17 | エイエムエス-オスラム インターナショナル ゲーエムベーハー | オプトエレクトロニクス照明装置および製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2009066398A1 (ja) | 2011-03-31 |
US7897989B2 (en) | 2011-03-01 |
US20100289048A1 (en) | 2010-11-18 |
JP4167717B1 (ja) | 2008-10-22 |
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