WO2009060769A1 - アッシング装置 - Google Patents

アッシング装置 Download PDF

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Publication number
WO2009060769A1
WO2009060769A1 PCT/JP2008/069681 JP2008069681W WO2009060769A1 WO 2009060769 A1 WO2009060769 A1 WO 2009060769A1 JP 2008069681 W JP2008069681 W JP 2008069681W WO 2009060769 A1 WO2009060769 A1 WO 2009060769A1
Authority
WO
WIPO (PCT)
Prior art keywords
passage
ashing
substrate
processing chamber
metal
Prior art date
Application number
PCT/JP2008/069681
Other languages
English (en)
French (fr)
Inventor
Masahisa Ueda
Takashi Kurimoto
Kyuzo Nakamura
Koukou Suu
Toshiya Yogo
Kazushige Komatsu
Nobusuke Tachibana
Original Assignee
Ulvac, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac, Inc. filed Critical Ulvac, Inc.
Priority to DE112008000047T priority Critical patent/DE112008000047T5/de
Priority to CN2008800012660A priority patent/CN101568998B/zh
Priority to US12/443,912 priority patent/US20100193131A1/en
Priority to KR1020097013288A priority patent/KR101094424B1/ko
Publication of WO2009060769A1 publication Critical patent/WO2009060769A1/ja
Priority to US14/498,402 priority patent/US9466475B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

　アッシングレートの経時変化を抑制するアッシング装置。露出金属を含む基板（Ｗ）上の有機材料を処理室（１１）内にてアッシングするアッシング装置は、処理室（１１）内に形成され、該処理室（１１）に供給された活性種が通過する経路を含む。この経路は、該経路を画定する面であって、活性種によって基板（Ｗ）から飛散する前記金属が付着し得る面（１１ａ；３１ａ；３３ａ；３３ｂ）に、前記金属と同一の金属が露出されるように形成されている。
PCT/JP2008/069681 2007-11-05 2008-10-29 アッシング装置 WO2009060769A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE112008000047T DE112008000047T5 (de) 2007-11-05 2008-10-29 Veraschungsvorrichtung
CN2008800012660A CN101568998B (zh) 2007-11-05 2008-10-29 灰化装置
US12/443,912 US20100193131A1 (en) 2007-11-05 2008-10-29 Ashing device
KR1020097013288A KR101094424B1 (ko) 2007-11-05 2008-10-29 애싱 시스템
US14/498,402 US9466475B2 (en) 2007-11-05 2014-09-26 Ashing device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-287341 2007-11-05
JP2007287341A JP5474291B2 (ja) 2007-11-05 2007-11-05 アッシング装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/443,912 A-371-Of-International US20100193131A1 (en) 2007-11-05 2008-10-29 Ashing device
US14/498,402 Continuation US9466475B2 (en) 2007-11-05 2014-09-26 Ashing device

Publications (1)

Publication Number Publication Date
WO2009060769A1 true WO2009060769A1 (ja) 2009-05-14

Family

ID=40625663

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/069681 WO2009060769A1 (ja) 2007-11-05 2008-10-29 アッシング装置

Country Status (7)

Country Link
US (2) US20100193131A1 (ja)
JP (1) JP5474291B2 (ja)
KR (1) KR101094424B1 (ja)
CN (1) CN101568998B (ja)
DE (1) DE112008000047T5 (ja)
TW (1) TWI389198B (ja)
WO (1) WO2009060769A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011035161A (ja) * 2009-07-31 2011-02-17 Ulvac Japan Ltd プラズマ処理装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110136346A1 (en) * 2009-12-04 2011-06-09 Axcelis Technologies, Inc. Substantially Non-Oxidizing Plasma Treatment Devices and Processes
US10522670B2 (en) 2012-06-26 2019-12-31 Nxp Usa, Inc. Semiconductor device with selectively etched surface passivation
US10957790B2 (en) 2012-06-26 2021-03-23 Nxp Usa, Inc. Semiconductor device with selectively etched surface passivation
US10825924B2 (en) 2012-06-26 2020-11-03 Nxp Usa, Inc. Semiconductor device with selectively etched surface passivation
KR20230056219A (ko) * 2021-10-20 2023-04-27 (주)아이씨디 Dc 펄스 플라즈마 기판 처리 장치
KR102591654B1 (ko) * 2021-10-20 2023-10-19 ( 주)아이씨디 축전 결합 플라즈마 기판 처리 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0945495A (ja) * 1995-08-02 1997-02-14 Ulvac Japan Ltd プラズマ処理装置
JP2003515960A (ja) * 1999-12-02 2003-05-07 ティーガル コーポレイション 加熱およびテクスチャー付与された電極および表面を備えた、改良リアクタ

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JPH0945495A (ja) * 1995-08-02 1997-02-14 Ulvac Japan Ltd プラズマ処理装置
JP2003515960A (ja) * 1999-12-02 2003-05-07 ティーガル コーポレイション 加熱およびテクスチャー付与された電極および表面を備えた、改良リアクタ

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* Cited by examiner, † Cited by third party
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Also Published As

Publication number Publication date
DE112008000047T5 (de) 2009-09-10
CN101568998B (zh) 2012-08-01
KR101094424B1 (ko) 2011-12-15
TW200921785A (en) 2009-05-16
JP5474291B2 (ja) 2014-04-16
KR20090094323A (ko) 2009-09-04
CN101568998A (zh) 2009-10-28
JP2009117521A (ja) 2009-05-28
US9466475B2 (en) 2016-10-11
TWI389198B (zh) 2013-03-11
US20150013715A1 (en) 2015-01-15
US20100193131A1 (en) 2010-08-05

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