WO2009048089A1 - グレートーンマスクの製造方法 - Google Patents

グレートーンマスクの製造方法 Download PDF

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Publication number
WO2009048089A1
WO2009048089A1 PCT/JP2008/068332 JP2008068332W WO2009048089A1 WO 2009048089 A1 WO2009048089 A1 WO 2009048089A1 JP 2008068332 W JP2008068332 W JP 2008068332W WO 2009048089 A1 WO2009048089 A1 WO 2009048089A1
Authority
WO
WIPO (PCT)
Prior art keywords
semi
light
film
tone mask
transparent film
Prior art date
Application number
PCT/JP2008/068332
Other languages
English (en)
French (fr)
Inventor
Fumihiko Yamada
Toshiharu Ozaki
Takaei Sasaki
Masahiko Ishizuka
Kagehiro Kageyama
Hiroyuki Iso
Ryouichi Kobayashi
Atsushi Hayashi
Original Assignee
Ulvac Coating Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Coating Corporation filed Critical Ulvac Coating Corporation
Priority to JP2009513912A priority Critical patent/JP5352451B2/ja
Priority to US12/682,549 priority patent/US20100294651A1/en
Priority to KR1020107010168A priority patent/KR101247768B1/ko
Priority to CN200880111760A priority patent/CN101821676A/zh
Publication of WO2009048089A1 publication Critical patent/WO2009048089A1/ja

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

　安定かつ容易な成膜条件の下で露光波長に対する波長依存性を小さくするグレートーンマスクの製造方法。ＡｒとＮＯとからなる雰囲気の下で純Ｃｒターゲットをスパッタする反応性スパッタリング法を用い、単層構造の窒化Ｃｒ膜を半透光膜として成膜する。この際、ＮＯの濃度が異なる複数の成膜条件の下で得た複数の異なる分光透過率曲線に基づいて、半透光膜の透過率均一性を３６５ｎｍ～４３６ｎｍで１．０％以下、又は、３００ｎｍ～５００ｎｍで４．０％以下にするためのＮＯの目標濃度（中間値）を得た後に、該目標濃度のＮＯを用いて半透光膜を成膜する。
PCT/JP2008/068332 2007-10-12 2008-10-09 グレートーンマスクの製造方法 WO2009048089A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009513912A JP5352451B2 (ja) 2007-10-12 2008-10-09 グレートーンマスクの製造方法
US12/682,549 US20100294651A1 (en) 2007-10-12 2008-10-09 Process for producing gray tone mask
KR1020107010168A KR101247768B1 (ko) 2007-10-12 2008-10-09 그레이 톤 마스크의 제조 방법
CN200880111760A CN101821676A (zh) 2007-10-12 2008-10-09 用于制造灰色调掩模的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-266959 2007-10-12
JP2007266959 2007-10-12

Publications (1)

Publication Number Publication Date
WO2009048089A1 true WO2009048089A1 (ja) 2009-04-16

Family

ID=40549232

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/068332 WO2009048089A1 (ja) 2007-10-12 2008-10-09 グレートーンマスクの製造方法

Country Status (6)

Country Link
US (1) US20100294651A1 (ja)
JP (1) JP5352451B2 (ja)
KR (1) KR101247768B1 (ja)
CN (1) CN101821676A (ja)
TW (1) TWI422967B (ja)
WO (1) WO2009048089A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009244350A (ja) * 2008-03-28 2009-10-22 Hoya Corp 多階調フォトマスク及びその製造方法、並びにパターン転写方法
JP2010078923A (ja) * 2008-09-26 2010-04-08 Hoya Corp 多階調フォトマスク、フォトマスクブランク、及びパターン転写方法
WO2024190208A1 (ja) * 2023-03-15 2024-09-19 株式会社ニコン フォトマスクブランクス、フォトマスク、フォトマスクブランクスの製造方法、フォトマスクの製造方法、及びデバイスの製造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
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JP2010044149A (ja) * 2008-08-11 2010-02-25 Hoya Corp 多階調フォトマスク、パターン転写方法及び多階調フォトマスクを用いた表示装置の製造方法
CN102573344A (zh) * 2010-12-13 2012-07-11 鸿富锦精密工业（深圳）有限公司 壳体及其制作方法
CN102560340A (zh) * 2010-12-16 2012-07-11 鸿富锦精密工业（深圳）有限公司 壳体及其制作方法
CN102650036A (zh) * 2011-02-25 2012-08-29 鸿富锦精密工业（深圳）有限公司 金属外壳上形成乳白色膜层的方法
CN102181838B (zh) * 2011-05-05 2013-01-09 深圳市科利德光电材料股份有限公司 铬版制造工艺
KR101271371B1 (ko) * 2011-07-11 2013-06-07 주식회사 피케이엘 평판 디스플레이 소자의 제조에 사용되는 그레이 톤 마스크 및 그 제조방법
CN104111581A (zh) * 2014-07-09 2014-10-22 京东方科技集团股份有限公司 掩膜板及其制造方法、薄膜晶体管的制造方法
KR102096269B1 (ko) * 2016-03-31 2020-04-03 주식회사 엘지화학 포토 마스크 및 이를 이용한 컬러필터용 컬럼 스페이서의 제조방법
CN105734507B (zh) * 2016-04-05 2018-06-19 基迈克材料科技（苏州）有限公司 成膜均匀的细晶镍合金旋转靶材及其热挤压优化制备方法

Citations (6)

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JPH06342205A (ja) * 1993-04-09 1994-12-13 Dainippon Printing Co Ltd 位相シフトフォトマスク、位相シフトフォトマスク用ブランクス及びそれらの製造方法
WO2007029826A1 (ja) * 2005-09-09 2007-03-15 Hoya Corporation フォトマスクブランクとその製造方法、及びフォトマスクの製造方法、並びに半導体装置の製造方法
WO2007074810A1 (ja) * 2005-12-26 2007-07-05 Hoya Corporation マスクブランク及びフォトマスク
JP2007178649A (ja) * 2005-12-27 2007-07-12 Dainippon Printing Co Ltd 階調マスク
JP2007188069A (ja) * 2005-12-14 2007-07-26 Dainippon Printing Co Ltd マスクブランクおよび階調マスク
JP2008203373A (ja) * 2007-02-16 2008-09-04 Clean Surface Gijutsu:Kk ハーフトーンブランクス及びハーフトーンブランクスの製造方法

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JP2002189281A (ja) * 2000-12-19 2002-07-05 Hoya Corp グレートーンマスク及びその製造方法
JP5165833B2 (ja) * 2005-02-04 2013-03-21 信越化学工業株式会社 フォトマスクブランク、フォトマスク、およびフォトマスクブランクの製造方法
JP4919220B2 (ja) * 2005-02-28 2012-04-18 Ｈｏｙａ株式会社 グレートーンマスク
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Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06342205A (ja) * 1993-04-09 1994-12-13 Dainippon Printing Co Ltd 位相シフトフォトマスク、位相シフトフォトマスク用ブランクス及びそれらの製造方法
WO2007029826A1 (ja) * 2005-09-09 2007-03-15 Hoya Corporation フォトマスクブランクとその製造方法、及びフォトマスクの製造方法、並びに半導体装置の製造方法
JP2007188069A (ja) * 2005-12-14 2007-07-26 Dainippon Printing Co Ltd マスクブランクおよび階調マスク
WO2007074810A1 (ja) * 2005-12-26 2007-07-05 Hoya Corporation マスクブランク及びフォトマスク
JP2007178649A (ja) * 2005-12-27 2007-07-12 Dainippon Printing Co Ltd 階調マスク
JP2008203373A (ja) * 2007-02-16 2008-09-04 Clean Surface Gijutsu:Kk ハーフトーンブランクス及びハーフトーンブランクスの製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009244350A (ja) * 2008-03-28 2009-10-22 Hoya Corp 多階調フォトマスク及びその製造方法、並びにパターン転写方法
JP2010078923A (ja) * 2008-09-26 2010-04-08 Hoya Corp 多階調フォトマスク、フォトマスクブランク、及びパターン転写方法
WO2024190208A1 (ja) * 2023-03-15 2024-09-19 株式会社ニコン フォトマスクブランクス、フォトマスク、フォトマスクブランクスの製造方法、フォトマスクの製造方法、及びデバイスの製造方法

Also Published As

Publication number Publication date
JP5352451B2 (ja) 2013-11-27
CN101821676A (zh) 2010-09-01
TWI422967B (zh) 2014-01-11
TW200916947A (en) 2009-04-16
KR101247768B1 (ko) 2013-03-25
KR20100077013A (ko) 2010-07-06
US20100294651A1 (en) 2010-11-25
JPWO2009048089A1 (ja) 2011-02-24

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