WO2009044597A1 - 高周波スパッタリング装置 - Google Patents

高周波スパッタリング装置 Download PDF

Info

Publication number
WO2009044597A1
WO2009044597A1 PCT/JP2008/065485 JP2008065485W WO2009044597A1 WO 2009044597 A1 WO2009044597 A1 WO 2009044597A1 JP 2008065485 W JP2008065485 W JP 2008065485W WO 2009044597 A1 WO2009044597 A1 WO 2009044597A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
chamber
substrate holder
sputtering device
frequency sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/065485
Other languages
English (en)
French (fr)
Inventor
Yoshinori Nagamine
Kanto Nakamura
Koji Tsunekawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/JP2007/069459 external-priority patent/WO2009044473A1/ja
Priority claimed from JP2008215386A external-priority patent/JP5190316B2/ja
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Priority to CN2008801103366A priority Critical patent/CN101821424B/zh
Priority to KR1020107007282A priority patent/KR101229473B1/ko
Publication of WO2009044597A1 publication Critical patent/WO2009044597A1/ja
Priority to US12/727,316 priority patent/US9017535B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

高周波スパッタリング装置の自己バイアスを制御する手法により高品質の磁気抵抗薄膜を提供する。基板電位を調整することで基板に対する自己バイアスの制御を行うために、本発明に従った高周波スパッタリング装置は、チャンバと、チャンバの内部を排気する排気手段と、チャンバ内にガスを供給するガス導入手段と、基板載置台を備える基板ホルダと、基板ホルダを回転させることが可能な回転駆動手段と、ターゲット載置台を備えるスパッタリングカソードであって、基板載置台の表面とターゲット載置台の表面とが非平行となるように配置されることを特徴とするスパッタリングカソードと、基板ホルダ内部に設けられた電極と、電極と電気的に接続されており基板ホルダ上の基板電位を調整する可変インピーダンス機構と、を有する。
PCT/JP2008/065485 2007-10-04 2008-08-29 高周波スパッタリング装置 Ceased WO2009044597A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008801103366A CN101821424B (zh) 2007-10-04 2008-08-29 高频溅射装置
KR1020107007282A KR101229473B1 (ko) 2007-10-04 2008-08-29 고주파 스퍼터링 장치
US12/727,316 US9017535B2 (en) 2007-10-04 2010-03-19 High-frequency sputtering device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPPCT/JP2007/069459 2007-10-04
PCT/JP2007/069459 WO2009044473A1 (ja) 2007-10-04 2007-10-04 高周波スパッタリング装置
JP2008-215386 2008-08-25
JP2008215386A JP5190316B2 (ja) 2007-10-04 2008-08-25 高周波スパッタリング装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/727,316 Continuation US9017535B2 (en) 2007-10-04 2010-03-19 High-frequency sputtering device

Publications (1)

Publication Number Publication Date
WO2009044597A1 true WO2009044597A1 (ja) 2009-04-09

Family

ID=40526026

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065485 Ceased WO2009044597A1 (ja) 2007-10-04 2008-08-29 高周波スパッタリング装置

Country Status (1)

Country Link
WO (1) WO2009044597A1 (ja)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08302467A (ja) * 1996-06-17 1996-11-19 Hitachi Ltd 成膜装置
JP2002115051A (ja) * 2000-10-05 2002-04-19 Anelva Corp バイアススパッタリング装置
JP2002294441A (ja) * 2001-03-30 2002-10-09 Anelva Corp バイアススパッタリング装置
JP2004162138A (ja) * 2002-11-14 2004-06-10 Anelva Corp プラズマ支援スパッタ成膜装置
JP2007100183A (ja) * 2005-10-06 2007-04-19 Cyg Gijutsu Kenkyusho Kk スパッタ装置
JP2007157840A (ja) * 2005-12-01 2007-06-21 Sony Corp 記憶素子、メモリ

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08302467A (ja) * 1996-06-17 1996-11-19 Hitachi Ltd 成膜装置
JP2002115051A (ja) * 2000-10-05 2002-04-19 Anelva Corp バイアススパッタリング装置
JP2002294441A (ja) * 2001-03-30 2002-10-09 Anelva Corp バイアススパッタリング装置
JP2004162138A (ja) * 2002-11-14 2004-06-10 Anelva Corp プラズマ支援スパッタ成膜装置
JP2007100183A (ja) * 2005-10-06 2007-04-19 Cyg Gijutsu Kenkyusho Kk スパッタ装置
JP2007157840A (ja) * 2005-12-01 2007-06-21 Sony Corp 記憶素子、メモリ

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