WO2009044597A1 - High-frequency sputtering device - Google Patents

High-frequency sputtering device Download PDF

Info

Publication number
WO2009044597A1
WO2009044597A1 PCT/JP2008/065485 JP2008065485W WO2009044597A1 WO 2009044597 A1 WO2009044597 A1 WO 2009044597A1 JP 2008065485 W JP2008065485 W JP 2008065485W WO 2009044597 A1 WO2009044597 A1 WO 2009044597A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
chamber
substrate holder
sputtering device
frequency sputtering
Prior art date
Application number
PCT/JP2008/065485
Other languages
French (fr)
Japanese (ja)
Inventor
Yoshinori Nagamine
Kanto Nakamura
Koji Tsunekawa
Original Assignee
Canon Anelva Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/JP2007/069459 external-priority patent/WO2009044473A1/en
Priority claimed from JP2008215386A external-priority patent/JP5190316B2/en
Application filed by Canon Anelva Corporation filed Critical Canon Anelva Corporation
Priority to KR1020107007282A priority Critical patent/KR101229473B1/en
Priority to CN2008801103366A priority patent/CN101821424B/en
Publication of WO2009044597A1 publication Critical patent/WO2009044597A1/en
Priority to US12/727,316 priority patent/US9017535B2/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment

Abstract

Provided is a high-quality magnetoresistive thin film by using a method for controlling self bias of a high-frequency sputtering device. A substrate potential is adjusted so as to control the self bias for the substrate. The high-frequency sputtering device includes a chamber, air exhaust means for discharging air from the chamber, gas introduction means for supplying a gas into the chamber, a substrate holder having a table on which the substrate is mounted, rotation drive means which can rotate the substrate holder, a sputtering cathode characterized in that the surface of the substrate mounting table is not parallel to the surface of the target mounting table, an electrode arranged inside the substrate holder, and a variable impedance mechanism electrically connected to the electrode for adjusting the substrate potential on the substrate holder.
PCT/JP2008/065485 2007-10-04 2008-08-29 High-frequency sputtering device WO2009044597A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020107007282A KR101229473B1 (en) 2007-10-04 2008-08-29 High-frequency sputtering device
CN2008801103366A CN101821424B (en) 2007-10-04 2008-08-29 High-frequency sputtering device
US12/727,316 US9017535B2 (en) 2007-10-04 2010-03-19 High-frequency sputtering device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
PCT/JP2007/069459 WO2009044473A1 (en) 2007-10-04 2007-10-04 High frequency sputtering device
JPPCT/JP2007/069459 2007-10-04
JP2008-215386 2008-08-25
JP2008215386A JP5190316B2 (en) 2007-10-04 2008-08-25 High frequency sputtering equipment

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/727,316 Continuation US9017535B2 (en) 2007-10-04 2010-03-19 High-frequency sputtering device

Publications (1)

Publication Number Publication Date
WO2009044597A1 true WO2009044597A1 (en) 2009-04-09

Family

ID=40526026

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065485 WO2009044597A1 (en) 2007-10-04 2008-08-29 High-frequency sputtering device

Country Status (1)

Country Link
WO (1) WO2009044597A1 (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08302467A (en) * 1996-06-17 1996-11-19 Hitachi Ltd Film forming device
JP2002115051A (en) * 2000-10-05 2002-04-19 Anelva Corp Bias sputtering device
JP2002294441A (en) * 2001-03-30 2002-10-09 Anelva Corp Bias sputtering apparatus
JP2004162138A (en) * 2002-11-14 2004-06-10 Anelva Corp Plasma assisted sputtering film-forming apparatus
JP2007100183A (en) * 2005-10-06 2007-04-19 Cyg Gijutsu Kenkyusho Kk Sputtering system
JP2007157840A (en) * 2005-12-01 2007-06-21 Sony Corp Memory element and memory

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08302467A (en) * 1996-06-17 1996-11-19 Hitachi Ltd Film forming device
JP2002115051A (en) * 2000-10-05 2002-04-19 Anelva Corp Bias sputtering device
JP2002294441A (en) * 2001-03-30 2002-10-09 Anelva Corp Bias sputtering apparatus
JP2004162138A (en) * 2002-11-14 2004-06-10 Anelva Corp Plasma assisted sputtering film-forming apparatus
JP2007100183A (en) * 2005-10-06 2007-04-19 Cyg Gijutsu Kenkyusho Kk Sputtering system
JP2007157840A (en) * 2005-12-01 2007-06-21 Sony Corp Memory element and memory

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