WO2009041612A1 - 陰極及び陰極の製造方法 - Google Patents

陰極及び陰極の製造方法 Download PDF

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Publication number
WO2009041612A1
WO2009041612A1 PCT/JP2008/067482 JP2008067482W WO2009041612A1 WO 2009041612 A1 WO2009041612 A1 WO 2009041612A1 JP 2008067482 W JP2008067482 W JP 2008067482W WO 2009041612 A1 WO2009041612 A1 WO 2009041612A1
Authority
WO
WIPO (PCT)
Prior art keywords
negative electrode
producing
oxidized
negative
electron affinity
Prior art date
Application number
PCT/JP2008/067482
Other languages
English (en)
French (fr)
Inventor
Daisuke Takeuchi
Sung-Gi Ri
Satoshi Yamasaki
Original Assignee
National Institute Of Advanced Industrial Science And Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute Of Advanced Industrial Science And Technology filed Critical National Institute Of Advanced Industrial Science And Technology
Priority to JP2009534419A priority Critical patent/JP4925147B2/ja
Publication of WO2009041612A1 publication Critical patent/WO2009041612A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Electrodes For Compound Or Non-Metal Manufacture (AREA)

Abstract

　室温より高い温度や酸化雰囲気でも負の電子親和力を維持できる陰極とする。 電子放出表面がダイヤモンドから成り、該ダイヤモンド表面を、混酸による沸騰洗浄処理又は大気中アニール又は酸素プラズマによる処理により酸化処理し、該酸化処理された表面を、真空中又は不活性ガス中で２００℃より高く９００℃以下で熱処理して形成された、表面の酸素被覆率が０．２～０．５ＭＬである負の電子親和力表面を備える陰極の製造方法。
PCT/JP2008/067482 2007-09-27 2008-09-26 陰極及び陰極の製造方法 WO2009041612A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009534419A JP4925147B2 (ja) 2007-09-27 2008-09-26 陰極

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-251548 2007-09-27
JP2007251548 2007-09-27

Publications (1)

Publication Number Publication Date
WO2009041612A1 true WO2009041612A1 (ja) 2009-04-02

Family

ID=40511492

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067482 WO2009041612A1 (ja) 2007-09-27 2008-09-26 陰極及び陰極の製造方法

Country Status (2)

Country Link
JP (1) JP4925147B2 (ja)
WO (1) WO2009041612A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2005027172A1 (ja) * 2003-09-16 2006-11-24 住友電気工業株式会社 ダイヤモンド電子放出素子およびこれを用いた電子線源
CN113046722A (zh) * 2021-05-27 2021-06-29 武汉大学深圳研究院 面向nv色心的氧覆盖金刚石表面结构及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09320450A (ja) * 1996-03-27 1997-12-12 Matsushita Electric Ind Co Ltd 電子放出素子及びその製造方法
JP2001068011A (ja) * 1999-08-25 2001-03-16 Japan Science & Technology Corp ｎ型ダイヤモンド電子放出素子及び電子デバイス

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09320450A (ja) * 1996-03-27 1997-12-12 Matsushita Electric Ind Co Ltd 電子放出素子及びその製造方法
JP2001068011A (ja) * 1999-08-25 2001-03-16 Japan Science & Technology Corp ｎ型ダイヤモンド電子放出素子及び電子デバイス

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
SUNG-GI RI ET AL.: "Surface electronic properties on boron doped (111) CVD homoepitaxial diamond films after oxidation treatments", DIAMOND AND RELATED MATERIALS, vol. 16, no. 4-7, July 2007 (2007-07-01), pages 831 - 835 *
TAKEUCHI D. ET AL.: "Zenko Denshi Hoshutsuritsu Bunkoho ni yoru n-gata Diamond kara no Denshi Hoshutsu Kiko ni Kansuru Kenkyu (I)", HEISEI 16 NENDO DAI 18 KAI ABSTRACTS OF DIAMOND SYMPOSIUM, 29 November 2004 (2004-11-29), pages 232 - 233 *
YAMADA T. ET AL.: "Field emission from surface-modified heavily phosphorus-doped homoepitaxial (111) diamond", PHYSICA STATUS SOLIDI (A), vol. 204, 30 August 2007 (2007-08-30), pages 2957 - 2964, Retrieved from the Internet <URL:http://www3.interscience.wiley.com/journal/116310540/abstract> [retrieved on 20081208] *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2005027172A1 (ja) * 2003-09-16 2006-11-24 住友電気工業株式会社 ダイヤモンド電子放出素子およびこれを用いた電子線源
CN113046722A (zh) * 2021-05-27 2021-06-29 武汉大学深圳研究院 面向nv色心的氧覆盖金刚石表面结构及其制备方法

Also Published As

Publication number Publication date
JPWO2009041612A1 (ja) 2011-01-27
JP4925147B2 (ja) 2012-04-25

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